CN103457544A - Low-noise amplification circuit - Google Patents
Low-noise amplification circuit Download PDFInfo
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- CN103457544A CN103457544A CN2013104066728A CN201310406672A CN103457544A CN 103457544 A CN103457544 A CN 103457544A CN 2013104066728 A CN2013104066728 A CN 2013104066728A CN 201310406672 A CN201310406672 A CN 201310406672A CN 103457544 A CN103457544 A CN 103457544A
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- field effect
- effect transistor
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- triode
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Abstract
The invention discloses a low-noise amplification circuit, which comprises a triode, field effect tubes, resistors and capacitors. According to the low-noise amplification circuit, the junction field effect tubes which are low in noise and wide in application range, and are capable of being matched with high-internal-resistance signal sources are adopted, and the triode is adopted for forming a follower, so that the Miller effect is avoided, the upper limiting frequency is improved, and lower noise mismatch is realized.
Description
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Technical field
The present invention relates to a kind of amplifying circuit, be specifically related to a kind of low noise amplifier circuit.
Background technology
Raising along with circuit level, it is more and more serious that Substrate Coupling Noise becomes, to substrate, coupling does not suppress ability to single-ended amplifiers etc., the substrate coupling can greatly affect the performance of low noise amplifier, the performance of system receiver finally deteriorates significantly, traditional single-ended input and output low noise amplifier can not solve the mismatch problems between gain in output signal, amplitude, phase place well, and the noise mismatch is serious, and power consumption is large.
Therefore, need a kind of new technical scheme to solve the problems referred to above.
Summary of the invention
Goal of the invention: for the problem and shortage of above-mentioned existing existence, the purpose of this invention is to provide a kind of low noise amplifier circuit, it is simple in structure.
Technical scheme: for achieving the above object, the technical solution used in the present invention is: a kind of low noise amplifier circuit, this circuit comprises triode, field effect transistor, resistance and electric capacity, described triode is sent to respectively the drain electrode of the second field effect transistor and the drain electrode of the 3rd field effect transistor by electric current, the collector electrode of this triode is connected with base stage by the 5th resistance, and this base stage is by the 6th grounding through resistance; The grid of the 3rd field effect transistor is connected with the grid of the second field effect transistor by the first electric capacity, and the source electrode of the grid of the second field effect transistor and the 3rd field effect transistor is respectively by a grounding through resistance; The source electrode of the second field effect transistor is by the series connection ground connection of the first resistance and the second resistance; The grid of the 3rd field effect transistor is input, and the current collection of triode is output very.
The present invention utilizes triode to form one and follows unit, and two field effect transistor form paraphase voltage amplification unit, and input voltage is amplified by this amplifying unit, and the signal after amplification is exported by following unit.Owing to following unit, the intermediate frequency zone source voltage gain of whole circuit is approximately equal to the voltage gain of common source circuit, thereby has eliminated Miller effect, makes upper limiting frequency improve.
Preferably, the collector electrode of triode is by the 3rd electric capacity access positive voltage.
Preferably, the 6th resistance two ends are parallel with the 4th electric capacity.
Preferably, the drain electrode of the second field effect transistor is connected by the 5th electric capacity with the drain electrode of the 3rd field effect transistor.
Preferably, the two ends of the second resistance are parallel with the second electric capacity.
Preferably, the second field effect transistor and the 3rd field effect transistor all adopt technotron.
Beneficial effect: the present invention adopts technotron, and its noise is low, and can be complementary with the signal source of high internal resistance, applied widely, adopts triode to form follower simultaneously, avoids Miller effect, improves upper limiting frequency, less noise mismatch.
The accompanying drawing explanation
Fig. 1 is circuit diagram of the present invention.
Embodiment
As shown in Figure 1, the present invention includes triode, field effect transistor, resistance and electric capacity, the collector electrode of triode Q1 is by the 3rd capacitor C 3 access positive voltages, this triode Q1 is sent to respectively the drain electrode of the second field effect transistor Q2 and the drain electrode of the 3rd field effect transistor Q3 by electric current, the collector electrode of this triode Q1 is connected with base stage by the 5th resistance R 5, this base stage is by the 6th resistance R 6 ground connection, and the 6th resistance R 6 two ends are parallel with the 4th capacitor C 4; The grid of the 3rd field effect transistor Q3 is connected with the grid of the second field effect transistor Q2 by the first capacitor C 1, the source electrode of the grid of the second field effect transistor Q2 and the 3rd field effect transistor Q3 is respectively by a grounding through resistance, and the drain electrode of the second field effect transistor Q2 is connected by the 5th capacitor C 5 with the drain electrode of the 3rd field effect transistor Q3; The source electrode of the second field effect transistor Q2 is by the series connection ground connection of the first resistance R 1 and the second resistance R 2, and the two ends of the second resistance R 2 are parallel with the second capacitor C 2; The grid of the 3rd field effect transistor Q3 is input, and the current collection of triode Q1 is output very.
The second field effect transistor Q2 and the 3rd field effect transistor Q3 all adopt technotron.
The present invention is simple in structure, adopts technotron, and noise is low, and can be complementary with the signal source of high internal resistance, applied widely, adopts triode to form follower simultaneously, avoids Miller effect, improves upper limiting frequency, less noise mismatch.
Claims (6)
1. a low noise amplifier circuit, it is characterized in that: comprise triode, field effect transistor, resistance and electric capacity, described triode (Q1) is sent to respectively the drain electrode of the second field effect transistor (Q2) and the drain electrode of the 3rd field effect transistor (Q3) by electric current, the collector electrode of this triode (Q1) is connected with base stage by the 5th resistance (R5), and this base stage is by the 6th resistance (R6) ground connection; The grid of described the 3rd field effect transistor (Q3) is connected with the grid of the second field effect transistor (Q2) by the first electric capacity (C1), and the source electrode of the grid of described the second field effect transistor (Q2) and the 3rd field effect transistor (Q3) is respectively by a grounding through resistance; The source electrode of the second field effect transistor (Q2) is by the series connection ground connection of the first resistance (R1) and the second resistance (R2); The grid of the 3rd field effect transistor (Q3) is input, and the current collection of triode (Q1) is output very.
2. a kind of low noise amplifier circuit according to claim 1 is characterized in that: the collector electrode of described triode (Q1) is by the 3rd electric capacity (C3) access positive voltage.
3. a kind of low noise amplifier circuit according to claim 2, it is characterized in that: described the 6th resistance (R6) two ends are parallel with the 4th electric capacity (C4).
4. a kind of low noise amplifier circuit according to claim 1, it is characterized in that: the drain electrode of described the second field effect transistor (Q2) is connected by the 5th electric capacity (C5) with the drain electrode of the 3rd field effect transistor (Q3).
5. a kind of low noise amplifier circuit according to claim 1, it is characterized in that: the two ends of described the second resistance (R2) are parallel with the second electric capacity (C2).
6. a kind of low noise amplifier circuit according to claim 1 is characterized in that: described the second field effect transistor (Q2) all adopts technotron with the 3rd field effect transistor (Q3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104066728A CN103457544A (en) | 2013-09-10 | 2013-09-10 | Low-noise amplification circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104066728A CN103457544A (en) | 2013-09-10 | 2013-09-10 | Low-noise amplification circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103457544A true CN103457544A (en) | 2013-12-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013104066728A Pending CN103457544A (en) | 2013-09-10 | 2013-09-10 | Low-noise amplification circuit |
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| CN (1) | CN103457544A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203057076U (en) * | 2012-12-06 | 2013-07-10 | 四川高软软件科技有限公司 | Amplifying circuit with high upper limiting frequency |
| CN203057077U (en) * | 2012-12-06 | 2013-07-10 | 四川高软软件科技有限公司 | Enhanced gain-type amplifying circuit |
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2013
- 2013-09-10 CN CN2013104066728A patent/CN103457544A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203057076U (en) * | 2012-12-06 | 2013-07-10 | 四川高软软件科技有限公司 | Amplifying circuit with high upper limiting frequency |
| CN203057077U (en) * | 2012-12-06 | 2013-07-10 | 四川高软软件科技有限公司 | Enhanced gain-type amplifying circuit |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131218 |