CN103456649A - Method for encapsulating semiconductors - Google Patents
Method for encapsulating semiconductors Download PDFInfo
- Publication number
- CN103456649A CN103456649A CN2013103829623A CN201310382962A CN103456649A CN 103456649 A CN103456649 A CN 103456649A CN 2013103829623 A CN2013103829623 A CN 2013103829623A CN 201310382962 A CN201310382962 A CN 201310382962A CN 103456649 A CN103456649 A CN 103456649A
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- Prior art keywords
- substrate
- conductive adhesive
- packaging semiconductor
- coated
- heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- Wire Bonding (AREA)
Abstract
The invention provides a method for encapsulating semiconductors. The method for encapsulating the semiconductors comprises the steps of (1) coating non-conductive resin on a substrate, (2) carrying out heating on the substrate coated by the non-conductive resin, and (3) welding a chip on the heated substrate. The substrate is heated through a heating platform, the non-conductive resin coating the substrate is heated, and the viscosity of the non-conductive resin is improved. Furthermore, the effect that bubbles in the non-conductive resin between the chip and the substrate can be eliminated or reduced is ensured when welding is carried out on the chip and the substrate, and therefore the reliability of the product is improved.
Description
Technical field
The present invention relates to semiconductor part manufacturing technology method field, especially method for packaging semiconductor.
Background technology
In traditional chip package process, non-conductive adhesive easily causes the generation of bubble in the extruding of flowing, and bubble can affect spread, if especially on the surface of glue, have bubble, effective bond area of glue is reduced, thereby affect bonding firm degree, reduced the reliability of product.
Summary of the invention
Provide hereinafter about brief overview of the present invention, in order to the basic comprehension about some aspect of the present invention is provided.Should be appreciated that this general introduction is not about exhaustive general introduction of the present invention.It is not that intention is determined key of the present invention or pith, and nor is it intended to limit the scope of the present invention.Its purpose is only that the form of simplifying provides some concept, usings this as the preorder in greater detail of discussing after a while.
The object of the present invention is to provide a kind of method for packaging semiconductor, eliminate or reduce its bubble between chip and substrate, to improve product reliability.
For achieving the above object, a kind of method for packaging semiconductor provided by the invention comprises: step 1, by the non-conductive adhesive coated substrate; Step 2, to being coated with the base plate heating of described non-conductive adhesive; Step 3, by chips welding to the heating described substrate on.
Than prior art, beneficial effect of the present invention is: to the heating of substrate, the non-conductive adhesive be coated on substrate is heated, and guarantees when chip and substrate welding, in the non-conductive adhesive between the two, bubble can be eliminated or reduce, thereby improves the reliability of product.
The accompanying drawing explanation
Below with reference to the accompanying drawings illustrate embodiments of the invention, can understand more easily above and other objects, features and advantages of the present invention.Parts in accompanying drawing are just in order to illustrate principle of the present invention.In the accompanying drawings, same or similar technical characterictic or parts will adopt same or similar Reference numeral to mean.
The schematic flow sheet that Fig. 1 is conductor method for packing of the present invention.
Fig. 2 is the schematic diagram of the present invention to base plate heating.
Embodiment
Embodiments of the invention are described with reference to the accompanying drawings.The element of describing in an accompanying drawing of the present invention or a kind of execution mode and feature can combine with element and feature shown in one or more other accompanying drawing or execution mode.It should be noted that for purposes of clarity, omitted expression and the description of unrelated to the invention, parts known to persons of ordinary skill in the art and processing in accompanying drawing and explanation.
Referring to Fig. 1 and 2, the invention provides a kind of method for packaging semiconductor, comprise step 1(S1), by non-conductive adhesive (NCP) coated substrate 402; Step 2 (S2), to substrate 402 heating that are coated with non-conductive adhesive 403; Step 3 (S3), by chips welding to the heating substrate 402 on.
Heating by heating platform to substrate 402, the non-conductive adhesive 403 be coated on substrate 402 is heated, and can guarantee that bubble can be eliminated or reduce in the non-conductive adhesive 403 between the two, thereby improves the reliability of product when chip and substrate 402 welding.
Further, in order to realize the welding of said chip and substrate 402, be formed with the salient point for welding on chip, on substrate 402, form pad, salient point and pad are optionally corresponding one by one, to realize welding.
In an embodiment of the present invention, welding manner is optionally thermocompression bonding (TCB) mode.
In a kind of optional execution mode, to 402 heating times of substrate of being coated with non-conductive adhesive 403, at 1-600 minute, heating-up temperature is at 90-200 degree centigrade.Should be appreciated that, purpose to substrate 402 heating is heating coating non-conductive adhesive 403 thereon, thereby the viscosity that reaches non-conductive adhesive 403 increases, and eliminate or reduce when chip welds with substrate 402 effect of bubble in non-conductive adhesive 403, the time of heating and temperature are in order to make the above-mentioned effect can be better, therefore, above-mentioned heating time and temperature are not limited to the present invention, other temperature and time, just go for the present invention as long as can guarantee that non-conductive adhesive 403 produces a desired effect.Referring to Fig. 2, equally in order to guarantee the effect of non-conductive adhesive 403, will be coated with the substrate 402 of non-conductive adhesive 403, be positioned over heating platform 401 homogeneous heatings, non-conductive adhesive 403 is heated evenly.Non-conductive adhesive 403 is heated evenly, and can guarantee that the bubble of each several part all reduces or eliminates because of being heated in non-conductive adhesive, assurance non-conductive adhesive integral body bubble reduce or eliminate, so can also improve the viscosity of non-conductive adhesive.
In addition, non-conductive adhesive 403 can fill described substrate 402, also only on the pad of coating and substrate 402, or the mode needed with other applies, to meet different welding demands.
Continuation is referring to Fig. 2, and method for packaging semiconductor of the present invention, also comprise step 4 (S4), to above-mentioned non-conductive adhesive curing molding; Step 5 (S5), to semiconductor and the substrate 402 be packaged together carry out laser printing, plant ball, at least one subsequent handling in cutting, packing.The above-mentioned mode to the non-conductive adhesive curing molding is a lot, as methods such as cooling, ultraviolet ray irradiations, certainly, makes the standing spontaneous curing of non-conductive adhesive also passable.For the reliability of product is higher, carry out again subsequent handling after waiting non-conductive adhesive to solidify.
Below, complete description method for packaging semiconductor of the present invention:
First non-conductive adhesive 403 is coated on substrate 402, the substrate that is coated with non-conductive adhesive is placed on heating platform and heats, heating-up temperature is 100 degrees centigrade, 60 minutes heating times are (by heating, bubble in non-conductive adhesive reduces or eliminates, especially the lip-deep bubble of non-conductive adhesive is eliminated, and can increase effective bond area of non-conductive adhesive, thereby improve the viscosity of non-conductive adhesive).By pad on the salient point align substrates of chip, by the mode of thermocompression bonding, chip and substrate are welded.The non-conductive adhesive curing molding chip that welded and substrate is placed in to air cooling, so that certainly, according to the characteristic of different non-conductive adhesives, also can, by modes such as blowing, ultraviolet ray irradiation, be accelerated the curing of non-conductive adhesive.Finally, after non-conductive adhesive solidifies, the chip that welding is packaged together and substrate carry out laser printing, plant ball, at least one subsequent handling in cutting, packing.Finally complete encapsulation.
Although described the present invention and advantage thereof in detail, be to be understood that in the situation that do not exceed the spirit and scope of the present invention that limited by appended claim and can carry out various changes, alternative and conversion.And the application's scope is not limited only to the specific embodiment of the described process of specification, equipment, means, method and step.The one of ordinary skilled in the art will readily appreciate that from disclosure of the present invention, can use according to the present invention and carries out with the essentially identical function of corresponding embodiment described herein or obtain process, equipment, means, method or step result essentially identical with it, that existing and will be developed future.Therefore, appended claim is intended to comprise such process, equipment, means, method or step in their scope.
Claims (9)
1. a method for packaging semiconductor, is characterized in that, comprising:
Step 1, be coated on non-conductive adhesive on substrate;
Step 2, to being coated with the base plate heating of described non-conductive adhesive;
Step 3, by chips welding to the heating described substrate on.
2. method for packaging semiconductor according to claim 1, is characterized in that,
Be coated with the base plate heating time of non-conductive adhesive at 1-600 minute to described.
3. method for packaging semiconductor according to claim 1, is characterized in that,
To the described base plate heating temperature of non-conductive adhesive that is coated with at 90-200 degree centigrade.
4. method for packaging semiconductor according to claim 1, is characterized in that,
Also comprise: step 4, to above-mentioned non-conductive adhesive curing molding.
5. method for packaging semiconductor according to claim 4, is characterized in that,
Also comprise: step 5, described semiconductor and the substrate that welding is packaged together carries out laser printing, plants ball, at least one subsequent handling in cutting, packing.
6. method for packaging semiconductor according to claim 1, is characterized in that,
The described substrate that is coated with non-conductive adhesive, be positioned over the heating platform homogeneous heating.
7. method for packaging semiconductor according to claim 1, is characterized in that,
Be formed with pad on described substrate, on described chip, be formed with salient point;
During welding, described pad and described salient point toward each other, as pad.
8. according to the described method for packaging semiconductor of any one in claim 1-7, it is characterized in that,
Adopt thermocompression bonding that described chips welding is arrived to described substrate.
9. according to the described method for packaging semiconductor of any one in claim 1-7, it is characterized in that,
Described non-conductive adhesive fills described substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103829623A CN103456649A (en) | 2013-08-28 | 2013-08-28 | Method for encapsulating semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103829623A CN103456649A (en) | 2013-08-28 | 2013-08-28 | Method for encapsulating semiconductors |
Publications (1)
| Publication Number | Publication Date |
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| CN103456649A true CN103456649A (en) | 2013-12-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2013103829623A Pending CN103456649A (en) | 2013-08-28 | 2013-08-28 | Method for encapsulating semiconductors |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428263A (en) * | 2015-12-16 | 2016-03-23 | 南通富士通微电子股份有限公司 | Semiconductor package method |
| CN108733243A (en) * | 2017-04-17 | 2018-11-02 | 蓝思科技（长沙）有限公司 | A kind of production method of the touch screen based on nano silver film |
| CN111370318A (en) * | 2018-12-25 | 2020-07-03 | 东莞新科技术研究开发有限公司 | Method for eliminating internal stress of semiconductor |
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| CN201163615Y (en) * | 2008-01-08 | 2008-12-10 | 印能科技有限公司 | Bubble-removing bake oven apparatus for semiconductor packaging and processing |
| CN101477979A (en) * | 2008-01-03 | 2009-07-08 | 三星电子株式会社 | Multi-chip encapsulation body |
| CN101533786A (en) * | 2008-03-11 | 2009-09-16 | 印能科技有限公司 | Method for eliminating air bubble in chip adhesion rubber layer encapsulated by semiconductor |
| KR20100090561A (en) * | 2009-02-06 | 2010-08-16 | 이지스코 주식회사 | Electrostatic chuck having junction structure between different materals and fabrication method thereof |
| CN102903646A (en) * | 2011-07-25 | 2013-01-30 | 上海祯显电子科技有限公司 | Chip welding method |
| CN103050465A (en) * | 2012-12-12 | 2013-04-17 | 华天科技（西安）有限公司 | Wafer-thinning single-chip encapsulation piece with copper pillars and manufacturing technology thereof |
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2013
- 2013-08-28 CN CN2013103829623A patent/CN103456649A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101477979A (en) * | 2008-01-03 | 2009-07-08 | 三星电子株式会社 | Multi-chip encapsulation body |
| CN201163615Y (en) * | 2008-01-08 | 2008-12-10 | 印能科技有限公司 | Bubble-removing bake oven apparatus for semiconductor packaging and processing |
| CN101533786A (en) * | 2008-03-11 | 2009-09-16 | 印能科技有限公司 | Method for eliminating air bubble in chip adhesion rubber layer encapsulated by semiconductor |
| KR20100090561A (en) * | 2009-02-06 | 2010-08-16 | 이지스코 주식회사 | Electrostatic chuck having junction structure between different materals and fabrication method thereof |
| CN102903646A (en) * | 2011-07-25 | 2013-01-30 | 上海祯显电子科技有限公司 | Chip welding method |
| CN103050465A (en) * | 2012-12-12 | 2013-04-17 | 华天科技（西安）有限公司 | Wafer-thinning single-chip encapsulation piece with copper pillars and manufacturing technology thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428263A (en) * | 2015-12-16 | 2016-03-23 | 南通富士通微电子股份有限公司 | Semiconductor package method |
| CN108733243A (en) * | 2017-04-17 | 2018-11-02 | 蓝思科技（长沙）有限公司 | A kind of production method of the touch screen based on nano silver film |
| CN111370318A (en) * | 2018-12-25 | 2020-07-03 | 东莞新科技术研究开发有限公司 | Method for eliminating internal stress of semiconductor |
| CN111370318B (en) * | 2018-12-25 | 2024-04-09 | 东莞新科技术研究开发有限公司 | Method for eliminating internal stress of semiconductor |
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Inventor after: Zhang Weihong Inventor after: Shen Haijun Inventor after: Zhou Feng Inventor after: Zhang Weihong, Shen Haijun, Zhou Feng, Yan Xiaolong Inventor before: Zhang Tonglong Inventor before: Shen Haijun Inventor before: Zhang Weihong Inventor before: Hong Shengping Inventor before: Zhou Feng Inventor before: Yan Xiaolong Inventor before: Zhang Tonglong, Shen Haijun, Zhang Weihong, Hong Shengping, Zhou Feng, Yan Xiaolong, Lu Hailun |
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Application publication date: 20131218 |