CN103453958A - Thermo-differential flow sensor and production method thereof - Google Patents
Thermo-differential flow sensor and production method thereof Download PDFInfo
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- CN103453958A CN103453958A CN2012104470685A CN201210447068A CN103453958A CN 103453958 A CN103453958 A CN 103453958A CN 2012104470685 A CN2012104470685 A CN 2012104470685A CN 201210447068 A CN201210447068 A CN 201210447068A CN 103453958 A CN103453958 A CN 103453958A
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Abstract
The invention relates to the technical field of flow detection, in particular to a thermo-differential flow sensor and a production method thereof. The thermo-differential flow sensor comprises a base, an insulating transverse diaphragm, a heating resistor, and a temperature measurement resistor, wherein the insulating transverse diaphragm is formed on the base and the heating resistor and the temperature measurement resistor are arranged on the transverse diaphragm. A substrate is bonded below the base. A microflow path capable of guiding fluid to flow from beneath the transverse diaphragm is formed between the substrate and the base. Compared with the prior art, the thermo-differential flow sensor has the advantages that guidance of the microflow path formed between the base and the substrate allows the fluid to flow by both the upper and lower surfaces of the transverse diaphragm, forced convection heat exchange area of the surface of the transverse diaphragm is increased, fluid impact on the upper and lower surfaces of the transverse diaphragm is basically equal, detection precision of the thermo-differential flow sensor is improved, the upper and lower surfaces of the transverse diaphragm are evenly stressed, and accordingly the flow sensor is less prone to damage, more reliable and more durable.
Description
Technical field
The invention belongs to technical field of fluid detection, relate in particular to thermal type flow sensor and preparation method thereof.
Background technology
But flow sensor is a kind of flow velocity of test fluid the device that is translated into voltage signal.Flow sensor has multiple at present, can be divided into mechanical flow sensor, heat-flow sensor and electromagnetic flow transducer etc., and the thermal type flow sensor is a kind of of thermal flow rate sensor.Because the thermal type flow sensor has the machinery-free transmission, without pressure compensation, the advantage that size is little, thereby receive much concern, there is powerful market potential, thought the main direction in flow sensor market by industry.
As shown in Figure 1, existing thermal type flow sensor comprises matrix 30 ＇ and is placed in diaphragm 20 ＇ on described matrix 30 ＇, during the test fluid flow, fluid only flows through from the top of this diaphragm 20 ＇, metal film layer 10 ＇ on diaphragm, only the single face contacting with fluid, be subject to the external environment impact, and measuring accuracy is low.
At present, industry has the colleague by changing phrenic material or thickness, reduces thermal conductivity, improve heating element on metal film layer and the effect of heat insulation of temperature element, and then the measuring accuracy of raising thermal type flow sensor, but its mechanical property is poor, and serviceable life is shorter;
Also have and on matrix, adopt network to improve the effect of heat insulation between heating element and testing element, or do not adopt diaphragm, and directly heating element and testing element are suspended in the middle of runner, but, the grid etching process of matrix is not easy to control, directly heating element and testing element are suspended on to the middle structure of runner, plant the comparison difficulty, and reliability are not high.
Given this, be badly in need of a kind of fluid test precision and high thermal type flow sensor of reliability of improving.
Summary of the invention
The object of the present invention is to provide thermal type flow sensor and preparation method thereof, be intended to solve in prior art the thermal flow rate sensor measuring accuracy low, the problem that serviceable life is short.
The present invention realizes like this, novel thermal type flow sensor, but comprise a matrix and the diaphragm that is covered in test fluid flow on matrix, the below bonding of described matrix has a substrate, forms the flow through fluid channel of described diaphragm below of a bootable fluid between described substrate and described matrix.
Further, the bottom surface of described matrix is concaved with a groove, described substrate top surface and this groove are equipped with a boss, and described groove can first guide the thermometric fluid upwards to flow through together with forming between described boss track that described transeptate below flows out downwards again is the fluid channel of trapezoidal shape.
Further, the cross-sectional area of described fluid channel is arranged to along flowing to the structure of dwindling stage by stage on direction.
Further, described fluid channel corner is set to 125.26 °; On the xsect of described fluid channel, sidewall and diapire are 125.26 ° of angles.
Further, described diaphragm is included in the supporting layer of body upper surface, the passivation layer that is sputtered in the metallic film on described supporting layer and is covered in described metallic film.
Further, described supporting layer is by SiO
2and Si
3n
4material is made, and described passivation layer is by Si
3n
4material is made.
Further, described metal film layer is made by Ti and Pt metal, comprises by its middle heating resistor and the temperature detecting resistance symmetrical to both sides longitudinal separation.
Further, the width of described temperature detecting resistance is 5 ~ 10 μ m, and on fluid flow direction, the distance at the edge of the groove floor on described temperature detecting resistance and described matrix bottom surface is greater than 150 μ m.
Further, described matrix and substrate are made into sheet by silicon, by Au-Si key bonding, are integrated.
Compared with prior art, thermal type flow sensor provided by the invention, by the fluid channel formed between its matrix and substrate, guide effect by micro-raceway groove, make the diaphragm upper and lower surface all have fluid to flow through, increased the forced-convection heat transfer area on diaphragm surface, the fluid impact that makes phrenic upper and lower surface be subject to is basically identical, like this, improved on the one hand the accuracy of detection of thermal type flow sensor, made on the other hand phrenic upper and lower surface stressed evenly, not fragile, improve reliability, extended serviceable life.
The present invention also provides the method for making of making above-mentioned any one thermal type flow sensor, comprises the following steps:
1) choose silicon chip as matrix, in body upper surface deposition one deck SiO
2as supporting layer;
2) at SiO
2the upper surface of supporting layer, deposit one deck Si by Low Pressure Chemical Vapor Deposition
3n
4as basalis;
3) at basalis Si
3n
4upper, by photoetching and sputter, cover Ti and Pt metal and comprise the heating resistor vertically distributed to both sides by centre with formation, the metal film layer of temperature detecting resistance and thermistor, the width of wherein said temperature detecting resistance is at 5 ~ 10 μ m, with described basalis Si
3n
4edge Distance be greater than 150 μ m;
4), on metal film layer, by plasma chemical vapor deposition, depositing at least one deck can be by the Si of its covering
3n
4as passivation layer;
5) on the lower surface of silicon chip matrix over against to this metal film layer place, adopt KOH solution by the hot corrosion method, offer a groove, expose the SiO of silicon chip body upper surface
2the supporting layer bottom;
6) get in addition a silicon chip as substrate, adopt KOH solution by the hot corrosion method, the both sides on surface dissolving place one and half grooves respectively, make a projection of formation between the two halves groove thereon;
7) groove over against described silicon chip matrix by the projection of silicon chip substrate, by Au-Si key bonding be integrated and between silicon chip substrate and described silicon chip matrix, form one first upwards after under fluid channel.
The method for making of thermal type flow sensor provided by the invention, selection is common, adopts the method for deposition, photoetching and sputter and hot corrosion just can realize, and whole method for making step is few, and fabrication cycle is short, simple to operate, is beneficial to apply to realize industrialization.
The accompanying drawing explanation
Fig. 1 is the structural representation of existing thermal type flow sensor;
Fig. 2 is the structural representation of thermal type flow sensor in the embodiment of the present invention;
Fig. 3 is the longitudinal cross-section schematic diagram of thermal type flow sensor in the embodiment of the present invention;
Fig. 4 is the schematic diagram of arranging of the metal film layer of thermal type flow sensor in the embodiment of the present invention;
Fig. 5 is the circuit catenation principle figure of the temperature detecting resistance in Fig. 4;
Fig. 6 is the local enlarged diagram of dotted portion in Fig. 4.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Below in conjunction with concrete accompanying drawing, realization of the present invention is described in detail.
As shown in Fig. 2 ~ 6, it is a preferred embodiment provided by the invention.
Novel thermal type flow sensor provided by the invention, but comprise a matrix 2 and the diaphragm 1 that is covered in test fluid flow on matrix 2, the below bonding of described matrix 2 has a substrate 4, forms the flow through fluid channel 3 of described diaphragm 1 below of a bootable fluid between described substrate 4 and described matrix 2.When needs test fluid flow flow, this novel thermal type flow sensor is installed in pipeline, make fluid flow direction consistent with the flow direction of described fluid channel 3, to fluid, it is Laminar Flow, when fluid is flowed through novel thermal type flow sensor, synchronization, there is fluid to be flow through by the top of diaphragm 1, there is fluid to flow through from the below of diaphragm 1 through this fluid channel 3, upper and lower surface while and the fluid contact of this diaphragm 1, so, fluid flows through from the upper and lower surface of diaphragm 1 simultaneously, the fluid impact that makes the upper and lower surface of diaphragm 1 be subject to is basically identical, like this, strengthened on the one hand the susceptibility of diaphragm 1 fluid flow rate, improved the accuracy of detection of novel thermal type flow sensor, the upper and lower surface of diaphragm 1 is stressed unanimous on the whole on the other hand, not fragile, improved reliability, extended serviceable life.
Particularly, shown in Figure 3, the bottom surface of described matrix 2 is concaved with a groove 21, described substrate 4 upper surfaces and this groove 21 are equipped with a boss 41, described groove 21 can first guide test fluid flow upwards to flow through together with forming between described boss 41 fluid channel that is trapezoidal shape 3 that the below of described diaphragm 1 flows out downwards again.Described fluid channel 3 can be divided into to five sections, be followed successively by fluid approach section 31, the fluid ascent stage 32, fluid thermometric section 33, fluid descending branch 34 and fluid flow out section 35, in actual test, the flow through fluid of diaphragm 1 below, first by fluid approach section 31, entered gently, proceed to the fluid ascent stage 32, smooth transition is to fluid thermometric section 33, described diaphragm 1 carries out the flow velocity test to it, again by fluid descending branch 34, be transitioned into rapidly fluid and flow out section 35, in flow ipe, so, in the time of can guaranteeing to test, fluid flows steadily, and turbulent flow does not occur, guaranteed the accuracy of test.
Further, the cross-sectional area of described fluid channel 3 dwindles stage by stage along flowing on direction.So, the fluid dynamics design concept, reduced the flow velocity loss of fluid, makes detection more accurate.
Further, in the present embodiment, described fluid channel 3 corners are set to 125.26 °, and like this, in the time of can reducing fluid and enter fluid channel 3, to the impact of its inwall, simultaneously, the flow velocity loss when reducing fluid and turning round has guaranteed the laminar flow effect of fluid simultaneously.On the xsect of described fluid channel 3, sidewall and diapire are 125.26 ° of angles, so, have increased fluid and have entered the entrance of fluid channel 3, have reduced the impact of fluid to fluid channel 3 entrances, the serviceable life of having improved product.
Further, described diaphragm 1 comprises the supporting layer 13 that is deposited on matrix 2 upper surfaces, the passivation layer 11 that is sputtered in the metallic film 12 on described supporting layer 13 and is covered in described metallic film 12.Particularly, described supporting layer 13 is by SiO
2and Si
3n
4material is made, and described passivation layer 11 is by Si
3n
4material is made, and described metallic film 12 is made by Ti and Pt metal, comprises heating resistor and temperature detecting resistance.The Pt metal is for making conductive heater and the temperature measurement fraction on metal film layer 122, and the Ti metal is as connecting the Pt metal in the Si that is positioned at supporting layer 13 tops
3n
4tack coat on layer.This passivation layer 11 has good oxidative resistance and sealing, as protective seam, can be used for avoiding the contaminated or rear measuring accuracy that affects metal film layer 122 that gets wet of metal film layer 122.
Further, comprise heating resistor and the temperature detecting resistance vertically distributed to both sides by the middle of it on described metal film layer 122.Along fluid flow direction, this heating resistor comprises symmetrically arranged upstream portion 1221 ＇ and downstream part 1221, and this temperature detecting resistance comprises upstream temperature detecting resistance 1222 ＇ and the downstream temperature detecting resistance 1222 that is placed in described heating resistor symmetria bilateralis setting.As shown in Figure 5, this upstream temperature detecting resistance 1222 ＇ and downstream temperature detecting resistance 1222 are connected in Wheatstone bridge, two upstream temperature detecting resistance 1222 ＇ series connection, two downstream temperature detecting resistance 1222 series connection, then parallel connection is connected with power Vcc, is connected with the electron device of exportable voltage model Uo between two upstream temperature detecting resistance 1222 ＇ and two downstream temperature detecting resistances 1222.Usually, this electron device is galvanometer, so, by this Wheatstone bridge, can accurately measure upstream temperature detecting resistance 1222 ＇ and the downstream temperature detecting resistance 1222 be connected in wherein.
Again as shown in Figure 4, along fluid flow direction, this metal film layer 122 has a plurality of contact resistances, and each contact resistance is followed successively by the first contact resistance 1225 ＇, the second contact resistance 1224 ＇, the 3rd contact resistance 1223 ＇, the 4th contact resistance 1223, the 5th contact resistance 1224, the 6th contact resistance 1225 and the 7th contact resistance 1226.As shown in Figure 6, the first contact resistance 1225 ＇ are communicated with the second contact resistance 1224 ＇, the 3rd contact resistance 1223 ＇ are communicated with the 4th contact resistance 1223 and the 7th contact resistance 1226, the 5th contact resistance 1224 is communicated with the 6th contact resistance 1225, and the contact resistance more than be interconnected is symmetrically distributed in the both sides of described heating resistor mutually.The 7th contact resistance 1226 is positioned at the downstream part of this metal film layer 122.
Wherein, metallic film 12 parts that in Fig. 4, the dotted line frame is irised out are thermistor 1227.And described dotted line frame is corresponding, measure-alike with groove 21 bottoms on described matrix 2.Terse for expressing, only illustrate in Fig. 1 that in Fig. 4, this dotted line frame institute frame is lived part, only demonstrate described thermistor 1227.As shown in Figure 4 and Figure 6, this thermistor 1227 comprises on upstream temperature detecting resistance 1222 ＇ and downstream temperature detecting resistance 1222 near the narrow part of folder of described supporting layer 13 centres and the middle narrow part of folder of the above supporting layer 13 of contact resistance respectively be interconnected.So, design can improve the effect of heat insulation between each resistance, improves the measurement sensitivity of this thermal type flow sensor.
It shown in Fig. 5, is a general Wheatstone bridge.Further, the width of described temperature detecting resistance is 5 ~ 10 μ m, and on fluid flow direction, the distance at the edge of groove 21 bottom surfaces on described temperature detecting resistance and described matrix 2 bottom surfaces is greater than 150 μ m.So, both guarantee the effect of heat insulation of temperature detecting resistance, weakened again the filament saturation effect at temperature detecting resistance place, upstream, guaranteed the testing range of this temp. type flow sensor.
Further, described matrix 2 and substrate 4 are made into sheet by silicon, by Au-Si key bonding, are integrated.By this Au-Si key, matrix 2 and substrate 4 are connected as one, sound construction is reliable, improves the stability of product, and is easy to realize, is beneficial to industrial mass manufacture.
The present invention also provides the method for making of making the novel thermal type flow sensor of above-mentioned any one, comprises the following steps:
1) choose silicon chip as matrix 2, in matrix 2 upper surface deposition one deck SiO2;
2) at SiO
2the upper surface of layer, deposit one deck Si by Low Pressure Chemical Vapor Deposition
3n
4, by SiO
2layer and Si
3n
4layer;
3) at Si
3n
4upper, by photoetching and sputter, cover Ti and Pt metal and comprise the heating resistor symmetrical to both sides longitudinal separation by centre and the metal film layer 122 of temperature detecting resistance with formation, the width of wherein said temperature detecting resistance is at 5 ~ 10 μ m;
4) on metal film layer 122, by plasma chemical vapor deposition, then deposit at least one deck can be by the Si of its covering
3n
4layer;
5) at the lower surface of silicon chip matrix 2, adopt KOH solution by the hot corrosion method, offer a groove 21, expose the SiO of silicon chip matrix 2 upper surfaces
2bottom, guarantees along on fluid flow direction that the spacing at described temperature detecting resistance and described bottom portion of groove edge is greater than 150 μ m simultaneously;
6) get in addition a silicon chip as substrate 4, adopt KOH solution by the hot corrosion method, the both sides on surface dissolving place one and half grooves respectively, make a projection 41 of formation between the two halves groove thereon; Usually at the temperature of 60 ℃, use KOH solution to dissolve described half groove on substrate 4;
7) groove 21 over against described silicon chip matrix by the projection of silicon chip substrate 41, by Au-Si key bonding be integrated and between silicon chip substrate 4 and described silicon chip matrix 2, form one can make fluid first upwards flow after to the fluid channel 3 of lower outflow.
The method for making of this novel thermal type flow sensor, selection is common, adopts the method for deposition, photoetching and sputter and hot corrosion just can realize, and whole method for making step is few, and fabrication cycle is short, simple to operate, is beneficial to apply to realize industrialization.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. thermal type flow sensor, but comprise a matrix and the diaphragm that is covered in test fluid flow on matrix, it is characterized in that, the below bonding of described matrix has a substrate, forms the flow through fluid channel of described diaphragm below of a bootable fluid between described substrate and described matrix.
2. thermal type flow sensor according to claim 1, it is characterized in that: the bottom surface of described matrix is concaved with a groove, described substrate top surface and this groove are equipped with a boss, described groove together with forming between described boss, can first guide the thermometric fluid upwards to flow through track that described transeptate below flows out downwards again is trapezoidal fluid channel.
3. thermal type flow sensor according to claim 1 is characterized in that: the cross-sectional area of described fluid channel is set to along flowing to the structure of dwindling stage by stage on direction.
4. thermal type flow sensor according to claim 1 is characterized in that: described fluid channel corner is set to 125.26 °; On the xsect of described fluid channel, sidewall and diapire are 125.26 ° of angles.
5. according to the described thermal type flow sensor of claim 1-4 any one, it is characterized in that: described diaphragm is included in the supporting layer of body upper surface, the passivation layer that is sputtered in the metallic film on described supporting layer and is covered in described metallic film.
6. thermal type flow sensor according to claim 5, it is characterized in that: described supporting layer is by SiO
2and Si
3n
4material is made, and described passivation layer is by Si
3n
4material is made.
7. thermal type flow sensor according to claim 6, it is characterized in that: described metal film layer is made by Ti and Pt metal, comprise by the middle of it to both sides longitudinal separation symmetrical heating resistor and temperature detecting resistance.
8. thermal type flow sensor according to claim 7, it is characterized in that: the width of described temperature detecting resistance is 5 ~ 10 μ m, on fluid flow direction, the distance at the edge of the groove floor on described temperature detecting resistance and described matrix bottom surface is greater than 150 μ m.
9. thermal type flow sensor according to claim 1, it is characterized in that: described matrix and substrate are made into sheet by silicon, by Au-Si key bonding, are integrated.
10. make the method for the described thermal type flow sensor of any one in claim 1-9, it is characterized in that, comprise the following steps:
1) choose silicon chip as matrix, in body upper surface deposition one deck SiO
2;
2) at SiO
2the upper surface of layer, deposit one deck Si by Low Pressure Chemical Vapor Deposition
3n
4;
3) at Si
3n
4on layer, by photoetching and sputter, cover Ti and Pt metal with formation comprise by
The middle heating resistor symmetrical to both sides longitudinal separation and the metal film layer of temperature detecting resistance, the width of wherein said temperature detecting resistance is at 5 ~ 10 μ m;
4) on metal film layer, by plasma chemical vapor deposition, then deposit at least one deck can be by the Si of its covering
3n
4layer; So far, complete phrenic making and be covered in the upper surface of described matrix;
5) on the lower surface of silicon chip matrix, adopt KOH solution by the hot corrosion method, offer a groove, expose the SiO of silicon chip body upper surface
2layer bottom; , guarantee along on fluid flow direction, the spacing at described temperature detecting resistance and described bottom portion of groove edge is greater than 150 μ m simultaneously;
6) get in addition a silicon chip as substrate, adopt KOH solution by the hot corrosion method, the both sides on surface dissolving place one and half grooves respectively, make a projection of formation between the two halves groove thereon;
7) groove over against described silicon chip matrix by the projection of silicon chip substrate, be integrated by Au-Si key bonding, and between silicon chip substrate and described silicon chip matrix, form one can make fluid first upwards flow after to the fluid channel of lower outflow.
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|---|---|---|---|
| CN201210447068.5A CN103453958B (en) | 2012-11-09 | 2012-11-09 | Thermal type flow transducer and preparation method thereof |
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Cited By (2)
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| CN107144378A (en) * | 2017-06-07 | 2017-09-08 | 深圳信息职业技术学院 | Mems pressure sensor |
| CN113310538A (en) * | 2020-02-27 | 2021-08-27 | 欧姆龙株式会社 | Flow rate measuring device |
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| CN107144378A (en) * | 2017-06-07 | 2017-09-08 | 深圳信息职业技术学院 | Mems pressure sensor |
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| Publication number | Publication date |
|---|---|
| CN103453958B (en) | 2016-08-03 |
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