CN103453877B - Self-powered monolithic integration digital sensor for detection of light source direction - Google Patents
Self-powered monolithic integration digital sensor for detection of light source direction Download PDFInfo
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Abstract
The invention discloses a self-powered monolithic integration digital sensor for detection of light source direction. The sensor comprises a light induction unit module and a light direction angle detection module, wherein the light induction unit module comprises photoelectric induction units which are arranged on a P-type substrate in an array. Each photoelectric induction unit comprises a sheltering wall and photodiodes symmetrically arranged on both sides of the sheltering wall. Each photodiode is a PN junction photodiode formed by an N trap on the P-type substrate and a P+ doping layer of the N trap. The light direction angle detection module comprises a Flash ADC (Analog to Digital Converter) circuit in a current mirror structure. The Flash ADC circuit comprises a left current mirror and a right current mirror which output digital signals. The light induction unit module disclosed by the invention can supply power to the Flash ADC circuit, so that the digital sensor is self-powered. The self-powered monolithic integration digital sensor is very easy to design and produce, very low in unit cost after volume production, small in size and light in weight and high in reliability.
Description
Technical field
The invention belongs to optical sensor technical field, a kind of self-powered single-chip integration digital sensor detected for light source direction.
Background technology
Relative direction between light source and checkout equipment and motion state detection play a significant role in a lot.In the spacecrafts such as satellite, many needs detect with the relative direction of the sun to determine the attitude of satellite, and regulate the angle of solar energy sailboard to carry out high efficiency generating to aim at the sun accordingly.In solar plant, the various sun power that utilizes such as solar lighting, solar telephone carries out there are same needs in the application of photovoltaic generation, and this is significant to raising generating efficiency, even also has application in the field such as detection, homing guidance of light source thermal source.And the motion feature such as speed, direction of light source (or sensor) can be obtained according to the Changing Pattern of light source (or shade), its application is more extensive.
The method of carrying out incident light angle detecting at present has a variety of, but all based on the larger plate case slotting structure of volume and other shadowing structures, such as baffle plate, mirror and aperture etc., and these methods illuminate different optical sensors in order to the light allowing different directions come, need between optical window and light sensing equipment, have a distance relatively grown, this all needs to adopt special mechanical hook-up and optical devices to realize, and has volume large, make difficulty, the shortcomings such as reliability is not high.Also do not see the incident light angle detecting device utilizing integrated circuit micro-scaled structures to realize at present.
In a lot of occasion such as Aero-Space, depopulated zone, wild suburb, implantable medical electronics, safety detection, be limited to that power supply is very limited is even difficult to the reasons such as acquisition, low circuit is so that the military service cycle of extension device as far as possible always to wish to design power consumption, and the ultralow Consumption of circuit is considered to the important directions of Future Ten year integrated circuit development.Current most is attractive is energy harvesting (Energy Harvesting) technology, and its basic thought obtains energy in the applied environment of electronic equipment, is converted to the work of electric energy supply circuit by energy converter.Energy harvesting and self-powered design belong to newer research field, and research is in recent years increasing.The research of energy harvesting comprises many aspects (mechanical energy, heat energy, luminous energy), but be mostly only conceived to energy harvesting, not and signal transacting combine and consider, especially also do not see the research of the energy harvesting realized on the integrated, in fact can realize a lot of circuit function in conjunction with super low-power consumption circuit design and low-voltage lockout method.The research of self-powered aspect is most of still based on system-level research, namely by comprising energy collection (such as solar panels), the system of signal processing circuit, actuator etc.Also do not see the complete self-powered research realized on one chip at present.
Summary of the invention
The problem that the present invention solves is to provide a kind of self-powered single-chip integration digital sensor detected for light source direction, and the digital signal achieving output carrys out detection light source incident angle, has self-powered, small size, high integrated feature.
The present invention is achieved through the following technical solutions:
For the self-powered single-chip integration digital sensor that light source direction detects, comprise photoinduction unit module and light direction angle detection module;
Described photoinduction unit module comprises the optoelectronic induction unit be arranged in arrayed in P type substrate; Each optoelectronic induction unit comprises baffle wall and is symmetricly set on the photodiode of its both sides; The PN junction that described photodiode is formed when being and being contacted with n type material by the P-type material in integrated circuit technology is formed;
Described light direction angle detection module comprises the Flash adc circuit of current-mirror structure, and this FlashADC circuit comprises left current mirror and the right current mirror of output digit signals;
Described left current mirror comprises left side benchmark NMOS tube and NMOS tube is compared in left side, reference light electric diode D on the right side of the drain electrode of left side benchmark NMOS tube and baffle wall
rrefbe connected, left side is compared the drain electrode of NMOS tube and is connected with the quantification area photodiode on the left of baffle wall, gate interconnect, source ground;
Described right current mirror comprises right side benchmark NMOS tube and NMOS tube is compared on right side, reference light electric diode D on the left of the drain electrode of right side benchmark NMOS tube and baffle wall
lrefbe connected, right side is compared the drain electrode of NMOS tube and is connected with the quantification area photodiode on the right side of baffle wall, gate interconnect, source ground;
Described reference light electric diode is the one-sided PN junction photodiode presetting area of baffle wall; Quantize area photodiode and comprise the different multiple PN junction photodiodes of area.
In described photoinduction unit, the size of the PN junction photodiode of baffle wall both sides is consistent, when incident light be radiated at baffle wall produces shade time, the PN junction photodiode of baffle wall both sides can be different by the area of light source irradiation, the electric current produced is not identical yet.
Described photodiode is the PN junction photodiode formed by the P+ doped layer of the N trap in P type substrate, N trap;
Described baffle wall is metal wall, and being that the metal level, metal contact hole and the via hole that are provided by integrated circuit technology are stacking forms.
In described angle detection circuitry, the numeral of left current mirror, right current mirror exports and there are certain mapping relations with light angle, according to left current mirror, the digital signal of right current mirror output and the mapping relations determination light angle of angle.
Described digital signal and the mapping relations of angle are first estimated, are more finally demarcated by reality detection data, its corresponding relation are built into database, using the foundation measured as light source incidence angle θ;
The resolution of measurement of angle in angle detection module is determined by the photodiode number of different area in photoinduction array, along with increasing of photodiode number, the area difference that baffle wall both sides difference quantizes the photodiode of area reduces, current mirror digital output terminal increases, the corresponding raising of angular resolution.
Each photodiode of described baffle wall side has different areas, wherein a kind of (but being not limited to this one) simple situation is: the area of minimum light sensing unit PN junction is considered as unit area A, the PN junction area of described reference light electric diode is 16A, and the PN junction area quantizing area photodiode is followed successively by 15A, 13A, 11A, 9A, 7A, 5A, 3A, 1A.
Described self-powered single-chip integration digital sensor can also comprise compensating module, and described compensating module comprises:
The upwards current compensation photodiode be connected with photoinduction unit module;
Or to be connected with light direction angle detection module pull down low-voltage compensating light electric diode.
The N of described upwards current compensation photodiode holds ground connection, and P end is held with the N of photoinduction unit and is connected.
The described source electrode pulling down NMOS tube in the N termination current mirror of low-voltage compensating light electric diode, P holds ground connection.
The IC planar technology that described photoinduction unit module, light direction angle detection module and compensating module adopt makes, and comprises the various integrated circuit technologies such as CMOS technology, BICMOS technique, bipolar technology.
Compared with prior art, the present invention has following useful technique effect:
The self-powered single-chip integration digital sensor detected for light source direction provided by the invention, have employed and can produce shade with the photoinduction unit module of detection light source incident angle by baffle wall, then for realizing lamp motion direction and angle detects the Flash adc circuit that have employed again a kind of current-mirror structure, and photoinduction unit module powers to Flash adc circuit, thus achieve the self-powered of digital sensor; The photodiode of the photoinduction unit module adopted can utilize photovoltaic effect to carry out energy harvesting, the Flash adc circuit of input and treatment circuit is integrated in the function same chips completing complexity simultaneously.Due to integrated circuit design, produce and encapsulation technology all very ripe and stable, so such devices is highly susceptible to design and production, after volume production, cost per unit is very low, volume and weight is very little, reliability is high, can carry out integrated with existing computing unit, storage unit, radio circuit etc., realize various function.
In addition, the digital signal exported by self-powered Flash ADC carrys out the feature of detection light source incident angle, and allow chip can be good at digital signaling system height under overall situation integrated, transplantability is fine; Thus achieve the self-powered light source direction detection chip that height is integrated, low cost, transplantability are good.
Further, simultaneously in order to solve the problem of field effect transistor conducting, it is also proposed the compensating module based on IC planar technology, no matter at NMOS tube M
l/Rrefwhen threshold value is lower (<0.4V), or when threshold value is higher (>0.4V), whole light source direction detection chip can work voluntarily, achieve self-powered feature, be allowed to condition at low-power consumption, the photo-sensing device field of zero-power has great application prospect.
Accompanying drawing explanation
Fig. 1 is the structural representation of photoinduction unit module;
Fig. 2 is photoinduction unit module arrangement schematic diagram;
Fig. 3 is that metal wall both sides PN junction area quantizes schematic diagram;
Fig. 4 is the schematic diagram that self-powered Flash adc circuit measures incident angle of light;
Fig. 5 digital signal exports the mapping relations with incident angle of light
Fig. 6 is the upwards current compensation scheme and corresponding schematic diagram that produce based on IC planar technology;
Fig. 7 be based on IC planar technology produce pull down low-voltage compensation scheme and schematic diagram;
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, and the explanation of the invention is not limited.
The self-powered single-chip integration digital sensor detected for light source direction provided by the invention, comprise photoinduction unit module and light direction angle detection module, adoptable IC plane manufacture craft, comprise the various integrated circuit technologies such as CMOS technology, BICMOS technique, bipolar technology, lower mask body is explained in conjunction with this kind of technique of CMOS.
Described photoinduction unit module comprises the optoelectronic induction unit be arranged in arrayed in P type substrate; Each optoelectronic induction unit comprises baffle wall and is symmetricly set on two or more photodiodes of its both sides; The PN junction photodiode that described photodiode is made up of the P+ doped layer of the N trap in P type substrate, N trap;
Described light direction angle detection module comprises the Flash adc circuit of current-mirror structure, and this FlashADC circuit comprises left current mirror and the right current mirror of output digit signals;
Described left current mirror comprises left side benchmark NMOS tube and NMOS tube is compared in left side, reference light electric diode D on the right side of the drain electrode of left side benchmark NMOS tube and baffle wall
rrefbe connected, left side is compared the drain electrode of NMOS tube and is connected with the quantification area photodiode on the left of baffle wall, gate interconnect, source ground;
Described right current mirror comprises right side benchmark NMOS tube and NMOS tube is compared on right side, reference light electric diode D on the left of the drain electrode of right side benchmark NMOS tube and baffle wall
lrefbe connected, right side is compared the drain electrode of NMOS tube and is connected with the quantification area photodiode on the right side of baffle wall, gate interconnect, source ground;
Described reference light electric diode is the PN junction photodiode of the one-sided maximum area of baffle wall (or a certain area); Quantize area photodiode and comprise the different multiple PN junction photodiodes of area.
As shown in Figure 1, photo-sensing device model comprises multiple photoinduction unit, and each photoinduction unit comprises P type substrate 4 and N trap 3, the N trap 3 be made on substrate is provided with baffle wall 2, and two photodiodes are symmetrical about baffle wall 2; Described photodiode is the PN junction photodiode D formed by the P+ doped layer 1 and N trap 3 that are made in N trap 3 li
li/Ri.Directly by N trap ground connection in photoinduction unit, have ignored the parasitic current I that the PN junction between substrate P 4 and N trap 3 produces
dS.
The size of the P+ doped layer of the photodiode of described baffle wall both sides is consistent; When incident light be radiated at baffle wall produces shade time, the photodiode of baffle wall both sides can be different by the area of light source irradiation, the electric current produced is not identical yet.
Described baffle wall is metal wall, is that metal level, Metal Contact and through hole that integrated circuit technology allows are stacking.
Fig. 2 is the micrograph of the self-powered single-chip integration digital sensor for light source direction detection made, and as can be seen from Figure 2 the arrangement of photodiode is array, and is in parallel each other;
Output digit signals after angle detection circuitry is connected with photodiode array, wherein angle detection circuitry is also blocked by sheet metal, in order to make angle detection circuitry normally work, not by illumination effect.
Fig. 3 and Fig. 4 represents that adopting current mirror comparative structure the angle information of incident light to be converted into digital signal exports, and utilizes the mapping relations of output digit signals and angle to determine the incident angle of light.Fig. 3 represents that metal wall both sides PN junction area quantizes schematic diagram, Fig. 4 represents that self-powered Flash adc circuit measures the schematic diagram of incident angle of light, shown in figure 3, first the area of P doped region, metal wall both sides is quantized, suppose that the maximum area of the one-sided photodiode of metal wall is 16 unit area A, and then set up PN junction amount of area to turn to the photodiode of 15A, 13A, 11A, 9A, 7A, 5A, 3A, 1A respectively;
Shown in the upper figure of figure 3, when the left oblique fire of illumination, on the right of baffle plate, produce shadow region, with the PN junction D of baffle plate left side maximum area and 16A
lrefthe electric current produced, as benchmark, that is to say its electric current as NMOS tube M
lrefsource-drain current; Again respectively by the PN junction D of area 15A, 13A, 11A, 9A, 7A, 5A, 3A, the 1A after quantification on the right of baffle plate
r0, D
r1d
r7the electric current that illumination produces is NMOS tube M
r0m
r7source-drain current; NMOS tube M
r0m
r7be in parallel, i.e. its gate interconnect, source ground, forms right current mirror structure;
With the PN junction D of maximum area on the right of baffle plate and 16A
rrefthe electric current produced, as benchmark, that is to say its electric current as NMOS tube M
rrefsource-drain current; The PN junction D of area 15A, 13A, 11A, 9A, 7A, 5A, 3A, 1A after respectively the baffle plate left side being quantized again
l0, D
l1d
l7the electric current that illumination produces is NMOS tube M
l0m
l7source-drain current; NMOS tube M
l0m
l7be in parallel, i.e. its gate interconnect, source ground, forms left current mirror structure;
When right current mirror structure carry out electric current compare time, because now shadow region is positioned at right side, the photocurrent that the electric current that the right has shadow region to produce can not produce than the benchmark on the left side and the complete light area of maximum area 16A is large, then R0 ... it is 0 entirely that R7 exports, and now light source is incident from left side;
When left current mirror structure carry out electric current compare time, although now shadow region is positioned at right side, the benchmark on right side and maximum area 16A area generation current, but reduce gradually along with the area of the diode in left side, when the area of left side diode is decremented to certain value and is a bit larger tham the illuminating area of right side benchmark, the current value that both produce is close to equal, it is 1 that NMOS tube now on the left of this corresponding to diode exports, so when this diode of area ratio is large, the NMOS tube of its correspondence exports is 1, it is 0 that the NMOS tube of this diode of area ratio hour its correspondence exports, so the numeral of left current mirror exports there are certain mapping relations with the illuminating area of right side benchmark, also be, the numeral of left current mirror exports exists certain mapping relations with light angle.
Accordingly, when the right oblique fire of illumination, above-mentioned left current mirror L0 ... it is 0 entirely that L7 exports, when certain Single port output switching activity of the right is 1, illustrate that the hypographous reference current of electric current and the left side that this port optical electric diode of the right produces is suitable, the numeral of the current mirror on right side exports exists certain mapping relations with light angle, and the digital signal exported according to the right and the mapping relations of angle can determine light angle.
Generally speaking, suppose area A in units of the area of a minimum light sensing unit PN junction, the quantification of metal baffle both sides PN junction area is realized by multiple photoinduction unit parallel connection, if make the one-sided maximum total area of metal wall be that 16A(needs the maximum total area can be larger), respectively baffle plate both sides PN junction amount of area is turned to 15A, 13A, 11A, 9A, 7A, 5A, 3A, 1A.Using the electric current of baffle plate both sides maximum area PN junction generation as left and right benchmark, as shown in Figure 3, the photocurrent produced by the left side being quantized area is compared with the right reference current, photocurrent the right being quantized the generation of area PN junction is compared with left side reference current, and the digital signal exported according to module and the mapping relations of angle determine the incident angle of light.
Fig. 5 represents that the digital signal recorded by experimental data exports the corresponding relation with incident angle of light, can find out, when incident angle θ (with reference to figure 1) be on the occasion of time (the also left oblique fire of light), shown in figure 3, the PN junction of the 16A area as benchmark on the left of baffle plate is fully illuminated, its photocurrent produced always to be greater than on the right side of baffle plate with shade and area is 15A, 13A, 11A, 9A, 7A, 5A, 3A, 1APN ties photocurrent, current mirror comparative structure according to Fig. 4, right side numeral exports R0 ... it is 0 entirely that R7 exports.With the increase of incident angle θ, baffle plate right shade area increases, the photocurrent that right side produces as the PN junction of the 16A area of benchmark reduces gradually, electric current comparative structure according to Fig. 4, relative to the reference current that right side reduces gradually, the PN junction area that on the left of baffle plate, complete illumination produces needed for same current also reduces accordingly gradually, therefore increases with angle, left side represents the different output signal L0 quantizing area photocurrent ... L7 is the also more of high level, and L7 to L0 overturns successively as height.From in like manner knowing the situation of incident angle θ (with reference to figure 1) for (the also right oblique fire of light) during negative value by inference.
As can be seen from Fig. 5 also, the resolution of incident angle of light is 10 degree, and this is relevant with the array size of photodiode, is also that the resolution of measurement of angle in angle detection module is determined by the size of photoinduction cell array; Along with the increase of photodiode array area, baffle plate both sides quantize area number and increase, and digital output end increases, and angular resolution also can improve, the highest resolution of accomplishing 1 degree to 2 degree.Concrete, described digital signal and the mapping relations of angle detect data by reality and decide, and its corresponding relation can be built into database, using the foundation measured as light source incidence angle θ.
Input due to angle detection circuitry is the photodiode that PN junction is formed, it can provide the driving voltage being about about 0.5V, if when adopting 0.5um CMOS technology to realize, in this technique, the conduction threshold of metal-oxide-semiconductor field effect transistor is about 0.7V, in order to the conducting of metal-oxide-semiconductor can be kept, the angle detection circuitry moment can normally be worked.Therefore, also make compensating light electric diode based on IC planar technology, the photodiode of input is carried out current compensation or dragged down by the source voltage of metal-oxide-semiconductor field effect transistor.
Described self-powered single-chip integration digital sensor can also comprise compensating module, and described compensating module comprises:
The upwards current compensation photodiode be connected with photoinduction unit module, its N holds ground connection, and P end is held with the N of photoinduction unit and is connected;
Or to be connected with light direction angle detection module pull down low-voltage compensating light electric diode, the source electrode of NMOS tube in its N termination current mirror, P holds ground connection.
Such as, described upwards current compensation photodiode is:
By being arranged on the upwards current compensation photodiode D formed with the P+ doped region in the same P type substrate of photoinduction unit module and N trap
p, upwards current compensation photodiode D
pn trap ground connection, P+ doped region is connected with the N trap of photoinduction unit.
The described low-voltage compensating light electric diode that pulls down is:
Make N trap in P type substrate, in N trap, make P+ doped region, N trap is connected with the source electrode of NMOS tube in current mirror, P type substrate and P+ doped region all ground connection, formed by P+ doped region and N trap and pull down low-voltage compensating light electric diode D
p.
Fig. 6 illustrates and produces upwards current compensation scheme based on IC planar technology.In photoinduction unit as shown in Figure 1, based on identical P type substrate 4, made again a N trap 6, in N trap, (6) have made again the direct ground connection of P+ doped region 5, a N trap 6.P+ doped region 5 is connected with the N trap 3 of photoinduction unit, because the P+ doped region 5 of new production and N trap 6 form photodiode D
p, its upwards offset current I produced
dPbe injected into N trap 3 li in photoinduction unit, compensate for photodiode D
liand D
rielectric current I
liand I
ri, and counteract the parasitic electric diode D of substrate P 4 and N trap 3 formation
sthe parasitic current I produced
dS.Produce upwards current compensation scheme based on IC planar technology, improve the photodiode D as benchmark
lref/Rrefthe electric current I produced
lref/Rref, allow NMOS tube M in self-powered Flash adc circuit
lref/Rrefbias voltage become large, even if its threshold value higher (>0.4V), also can time keep conducting, whole digital sensor can normally work in the moment.
Fig. 7 illustrates the compensation scheme pulling down low-voltage produced based on IC planar technology, in photoinduction unit as shown in Figure 1, has the NMOS tube M of multiple parallel connection based on identical P type substrate photoetching
l0/R0m
l7/R7, substrate P 4 has made the N trap 9 of the drain terminal as NMOS tube, the N trap 7 of source and grid 8, the N trap 9 of drain terminal has been connected with the P+ doped region 1 of photoinduction unit, photodiode D
land D
rthe electric current I produced
land I
rbe injected into the drain terminal 9 of NMOS tube, at making N trap 10 in identical P type substrate, in N trap 10, make a P+ doped region 11, N trap 10 is connected with the N trap 7 of the source of NMOS tube, P type substrate 4 and P+ doped region 11 all ground connection, the photodiode D formed by P+ doped region 11 and N trap 10
p, the photodiode D that P type substrate 4 and N trap 10 are formed
s, the electric current I that they produce respectively
dPand I
dSdrag down the electromotive force of N trap 10, made the source N trap 7 of coupled NMOS tube become negative voltage, allowed NMOS tube M in self-powered Flash adc circuit
lref/Rrefbias voltage become large, even if its threshold value higher (>0.4V), also can time keep conducting, allow whole chip normally work in the moment.
The IC planar technology that described photoinduction unit module, light direction angle detection module and compensating module adopt is not limited to the CMOS technology adopted in the present invention, BICMOS technique, bipolar technology etc. can also be comprised, as long as meet above-mentioned modular structure and function.
Claims (10)
1., for the self-powered single-chip integration digital sensor that light source direction detects, it is characterized in that, comprise photoinduction unit module and light direction angle detection module;
Described photoinduction unit module comprises the optoelectronic induction unit be arranged in arrayed in P type substrate; Each optoelectronic induction unit comprises baffle wall and is symmetricly set on the photodiode of its both sides; The PN junction that described photodiode is formed when being and being contacted with n type material by the P-type material in integrated circuit technology is formed;
Described light direction angle detection module comprises the angle detection circuitry of current-mirror structure, and this angle detection circuitry comprises left current mirror and the right current mirror of output digit signals;
Described left current mirror comprises left side benchmark NMOS tube and NMOS tube is compared in left side, reference light electric diode D on the right side of the drain electrode of left side benchmark NMOS tube and baffle wall
rrefbe connected, left side is compared the drain electrode of NMOS tube and is connected with the quantification area photodiode on the left of baffle wall, gate interconnect, the interconnected ground connection of source electrode;
Described right current mirror comprises right side benchmark NMOS tube and NMOS tube is compared on right side, reference light electric diode D on the left of the drain electrode of right side benchmark NMOS tube and baffle wall
lrefbe connected, right side is compared the drain electrode of NMOS tube and is connected with the quantification area photodiode on the right side of baffle wall, gate interconnect, the interconnected ground connection of source electrode;
Described reference light electric diode is the one-sided PN junction photodiode presetting area of baffle wall; Quantize area photodiode and comprise the different multiple PN junction photodiodes of area.
2. as claimed in claim 1 for the self-powered single-chip integration digital sensor of light source direction detection, it is characterized in that, in described photoinduction unit, the size of the PN junction photodiode of baffle wall both sides is consistent, when incident light be radiated at baffle wall produces shade time, the PN junction photodiode of baffle wall both sides can be different by the area of light source irradiation, the electric current produced is not identical yet.
3. as claimed in claim 1 for the self-powered single-chip integration digital sensor that light source direction detects, it is characterized in that, described baffle wall is metal wall, and being that the metal level, metal contact hole and the via hole that are provided by integrated circuit technology are stacking forms.
4. as claimed in claim 1 for the self-powered single-chip integration digital sensor of light source direction detection, it is characterized in that, in described angle detection circuitry, the numeral of left current mirror, right current mirror exports and there are certain mapping relations with light angle, according to left current mirror, the digital signal of right current mirror output and the mapping relations determination light angle of angle.
5. as claimed in claim 4 for the self-powered single-chip integration digital sensor of light source direction detection, it is characterized in that, described digital signal and the mapping relations of angle are first estimated, detect data by reality more finally to demarcate, its corresponding relation is built into database, using the foundation measured as light source incidence angle θ;
The resolution of measurement of angle in angle detection module is determined by the photodiode number of different area in photoinduction array, along with increasing of photodiode number, the area difference that baffle wall both sides difference quantizes the photodiode of area reduces, current mirror digital output terminal increases, the corresponding raising of angular resolution.
6. as claimed in claim 1 for the self-powered single-chip integration digital sensor of light source direction detection, it is characterized in that, each photodiode of baffle wall side has different areas, wherein a kind of situation is: the area of minimum light sensing unit PN junction is considered as unit area A, the PN junction area of described reference light electric diode is 16A, and the PN junction area quantizing area photodiode is followed successively by 15A, 13A, 11A, 9A, 7A, 5A, 3A, 1A.
7., as claimed in claim 1 for the self-powered single-chip integration digital sensor that light source direction detects, it is characterized in that, described self-powered single-chip integration digital sensor can also comprise compensating module, and described compensating module comprises:
The upwards current compensation photodiode be connected with photoinduction unit module;
Or to be connected with light direction angle detection module pull down low-voltage compensating light electric diode.
8. as claimed in claim 7 for the self-powered single-chip integration digital sensor that light source direction detects, it is characterized in that, the N of described upwards current compensation photodiode holds ground connection, and P end is held with the N of photoinduction unit and is connected.
9., as claimed in claim 7 for the self-powered single-chip integration digital sensor that light source direction detects, it is characterized in that, the described source electrode pulling down NMOS tube in the N termination current mirror of low-voltage compensating light electric diode, P holds ground connection.
10. as claimed in claim 7 for the self-powered single-chip integration digital sensor of light source direction detection, it is characterized in that, the IC planar technology that described photoinduction unit module, light direction angle detection module and compensating module adopt makes, and comprises CMOS technology, BICMOS technique and bipolar technology.
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| CN103453877A (en) | 2013-12-18 |
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