CN103444274B - Solder transfer substrate, the manufacture method of solder transfer substrate and solder printing transferring method - Google Patents
Solder transfer substrate, the manufacture method of solder transfer substrate and solder printing transferring method Download PDFInfo
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- CN103444274B CN103444274B CN201280015167.4A CN201280015167A CN103444274B CN 103444274 B CN103444274 B CN 103444274B CN 201280015167 A CN201280015167 A CN 201280015167A CN 103444274 B CN103444274 B CN 103444274B
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- solder
- transfer substrate
- adhesive linkage
- basal layer
- stripper
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 318
- 239000000758 substrate Substances 0.000 title claims abstract description 193
- 238000007639 printing Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title description 52
- 239000000853 adhesive Substances 0.000 claims abstract description 140
- 230000001070 adhesive Effects 0.000 claims abstract description 140
- 239000000843 powder Substances 0.000 claims abstract description 114
- 239000000463 material Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 38
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- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 238000005755 formation reaction Methods 0.000 claims description 18
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- 239000004744 fabric Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 79
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- 239000007767 bonding agent Substances 0.000 description 29
- 230000000694 effects Effects 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
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- 239000000835 fiber Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N iso-propanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
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Abstract
In order to provide a kind of solder transfer substrate that can carry out transferring and will not destroy the fragile film of the semiconductor element of the dielectric film with fragility, in the present invention, solder transfer substrate (5) including: basal layer (1)；The adhesive linkage (2) being configured on basal layer (1)；And the multiple solder powder (3) being configured on adhesive linkage (2)；Basal layer (1) is porous member, from being not configured with the side of adhesive linkage (2) to being configured with the side of adhesive linkage (2), at least formed with multiple holes making stripper pass through.And, the adhesive linkage (2) of the solder transfer substrate (5) of the present invention is if having injection stripper, the characteristic expanded.
Description
Technical field
The present invention relates to solder transfer substrate, the manufacture method of solder transfer substrate and solder printing transferring method.
Background technology
In recent years, in order to simultaneously advance densification and many pinizations of electrode terminal of semiconductor element, just trying hard to contract
The spacing of the electrode terminal of little semiconductor element and area.
Generally, in flip-chip is installed, the electrode terminal of the semiconductor elements such as LSI is formed solder bump etc. and dashes forward
Play electrode, this semiconductor element is crimped on the connection terminal of installation base plate face-down, and carry out heating and make shape in advance
Become the solder layer fusing on electrode terminal so that it is connect and install.
But, owing to spacing stricturization obtains significantly progress, therefore the most like that by the electrode of semiconductor element
Terminal arranges with 1 or 2 row are arranged in the method for peripheral part staggeredly, is short-circuited sometimes between electrode terminal, or because of
The difference of the thermal coefficient of expansion between semiconductor element and installation base plate and produce bad connection etc..Therefore, begin with and will partly lead
The electrode terminal of body member is configured to area-shaped to expand the method for spacing between electrode terminal, but, in recent years, even if carrying out
Area-shaped configures, the progress of spacing stricturization or more significant, thus at semiconductor element, the electrode terminal of installation base plate
The technology of upper formation solder layer has strict requirements.
In the past, form technology as the solder layer on the electrode terminal of semiconductor element, use plating or silk screen printing
Method, plant ball etc., but, although plating is applicable to the situation that spacing is narrow, but owing to complex procedures and equipment line are the biggest
Type, thus have problems in terms of productivity ratio.
Although additionally, silk screen print method and to plant ball excellent in terms of productivity ratio, but owing to employing mask, therefore, it is difficult to
Reply spacing stricturization.
In this case, in recent years, the connection end having several the electrode terminals at LSI element, circuit substrate is proposed
The technology (for example, referring to patent documentation 1) of solder it is formed selectively on son.These technology are applicable not only to the shape of trickle salient point
Become, moreover it is possible to disposably forming solder layer, therefore productivity ratio is the most excellent, the most constantly receives publicity.
As above-mentioned technology, in the technology that patent documentation 1 proposes, first, by by the solder being formed with oxide-film on surface
The solder thickener that powder is formed with the mixture of scaling powder is applied to be formed on whole of the circuit substrate being connected terminal.
Then, in this case circuit substrate is heated, so that solder powder melts, and be formed selectively on terminal connecting
Solder layer, so that be not short-circuited between adjacent connection terminal.
But, in this welding layer forming method, due to the narrowest between electrode terminal, therefore, even if in solder cream
Material is melted to be carried out afterwards, also can remain solder powder, the flux ingredients not melted, pacify at flip-chip between electrode terminal
In use environment after dress, exist generation bridge joint bad, migrate bad such problem.
As solution to the problems described above, propose to have and a kind of the supporting weight being attached with solder powder is stacked in semiconductor element
On part, circuit substrate, and carry out heating, pressurizeing, so that solder powder is optionally attached to the solder layer shape on electrode terminal
One-tenth technology (for example, referring to patent documentation 2).
Fig. 9 (a)～(e) are propositions in patent documentation 2, carry out the solder of attached solder on the weld part of workpiece in advance
Layer forms the explanatory diagram of the operation of (precoating).This operation of following description.
First, bonding agent 52 is applied to (Fig. 9 (a)) on the one side of supporting mass 51.
It follows that powder solder 53 is dispersed in the bonding agent being coated on supporting mass 51 to cover the degree of bonding agent 52
On 52 (Fig. 9 (b)).
Hereafter, carry out the powder solder 53 on brush supporting mass 51 with brush 54, thus removing is not bonded on bonding agent 52 many
Remaining powder solder 53, makes powder solder 53 uniform (Fig. 9 (c)).
On the other hand, it is formed with weld part 56 with what aqueous scaling powder 58 was coated on workpiece 55 by soldering flux sprayer 57
On face (Fig. 9 (d)).59 is resist.
It follows that make the scaling powder coated face of workpiece 55 overlapping with the powder solder bonding plane of supporting mass 51.Now, utilize
Not shown stamping machine from the top of supporting mass 51 between workpiece 55 and supporting mass 51 apply pressure.Then, due to bonding agent
52 have flexibility, followability, therefore, if supporting mass 51 is applied pressure, then the powder solder that is bonded on bonding agent 52 53 with
Weld part 56 contacts (Fig. 9 (e)).
Then, if utilizing not shown heater that the structure that workpiece 55 is overlapping with supporting mass 51 is heated
Pressurization, then powder solder 53 is diffused engaging on the interface of weld part 56.Then, if removing from workpiece 55 after cooling
Remove supporting mass 51, then the powder solder 53 spreading joint on the interface of weld part 56 can remain on weld part 56, resist
Powder solder 53 on 59 can be removed together with supporting mass 51.
Hereafter, by making the powder solder 53 on weld part 56 melt in reflow ovens, thus it is quasiconductor at workpiece 55
In the case of element, electrode terminal forms solder layer.
According to this welding layer forming method, even if solder layer also can be formed on the narrow electrode terminal of spacing, it is not necessary to as
Electrolysis plating utilizes main equipment line to carry out the operation of complexity like that, can produce simply with higher productivity ratio.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open 2000-094179 publication
Patent documentation 2: No. 2006/067827 publication of International Publication
Summary of the invention
Invent technical problem to be solved
But, it is used for being formed with use low-k if the solder layer of patent documentation 2 as described above is formed technology
Film as the semiconductor element of interlayer dielectric, the circuit substrate of fragile electrode terminal, then props up peeling off above-mentioned solder attachment
When holding the i.e. solder transfer substrate of an example of body, there is film having low dielectric constant, electrode pad can be stripped such problem.
In order to tackle the in recent years required granular of wiring rule, igh-speed wire-rod production line, begin to use low dielectric normal
Number film (so-called low-k film, ULK (Ultra Low-k: ultralow dielectric) film etc.) is as the layer insulation of semiconductor element
Film.In order to reduce dielectric constant, film having low dielectric constant itself is in having multiple, the i.e. cellular (low-k of nm emptying aperture
Density for example, 1.0～1.4g/cm3)。
Figure 10 (a) and (b) show and schematically show that the solder formation technology using above-mentioned patent documentation 2 is to have this crisp
The amplification profile of the operation of solder layer is formed on the electrode terminal of the semiconductor element of weak film having low dielectric constant 67.
As shown in Figure 10 (a), solder transfer substrate 65 includes: the base material 64 of thickness s1, the thickness being formed on this base material 64
The binding agent 62 spending a1, the solder powder 63 being configured on this bonding agent 62.On the other hand, there is the film having low dielectric constant 67 of fragility
Semiconductor element 66 near this solder transfer substrate 65 side surface electrode pad 69 on be formed with projected electrode 68.
As shown in Figure 10 (b), solder transfer substrate 65 is being pressed against on the semiconductor element 66 with projected electrode 68
And carry out in the operation that heats, bonding agent 62 is attached to each other with projected electrode 68.
Now, the decrement of the thickness of adhibited layer a2 at the position not contacted with projected electrode 68 is less, and electric with projection
The thickness of adhibited layer b2 that pole 68 contacts greatly is compressed.That is, the relation of a1 a2 ＞ b2 is become.Therefore, to projected electrode
Adhesive linkage on 68 is applied with bigger compression stress, and bonding agent 62, solder powder 63 and projected electrode 68 glue securely
Connect.
Owing to the adhesive strength between this bonding agent 62 and projected electrode 68 is more than the strong of fragile film having low dielectric constant 67
Degree, therefore, as shown in Figure 10 (c), in the operation peeling off solder transfer substrate 65, it may appear that the fragility on the downside of electrode pad 69
Film having low dielectric constant 67 on occur separate such problem.
Additionally, in the case of using circuit substrate as workpiece 55, such as at the solder layer utilizing above-mentioned patent documentation 2
Formation technology is on the circuit substrate being made up of silicon, or is being formed with the electricity being made up of the Cu more weak with the adhesive force of Si
During the upper formation solder layer such as the circuit substrate of pole pad, identical with above-mentioned situation, when peeling off solder transfer substrate, have fragility
Metal pad from circuit substrate peeling-off for topic.
The present invention considers the problem of existing solder transfer substrate, its object is to provide one can turn solder swimmingly
Print base material carries out solder transfer substrate, the manufacture method of solder transfer substrate and the weldering of use solder transfer substrate peeled off
Material printing transferring method.
Solve the technical scheme that technical problem is used
In order to solve above-mentioned problem, the Section 1 present invention is a kind of solder transfer substrate, including:
Basal layer；
It is arranged in the adhesive linkage on described basal layer；And
The multiple solder powder being configured on described adhesive linkage,
On described basal layer, from being not configured with the side of described adhesive linkage to the side at least shape being configured with described adhesive linkage
Become to have the multiple holes making stripper pass through.
The Section 2 present invention is in the solder transfer substrate of the Section 1 present invention,
If described adhesive linkage has injects described stripper, the characteristic expanded.
The Section 3 present invention is in the solder transfer substrate of the Section 1 present invention,
Described basal layer is porous member.
The Section 4 present invention is in the solder transfer substrate of the Section 1 present invention,
The plurality of hole is set to through to the described base in face not contacting side with described adhesive linkage from described basal layer
The face contacted with described adhesive linkage of bottom.
The Section 5 present invention is in the solder transfer substrate of the Section 4 present invention,
The plurality of hole at least forms the inner side to described adhesive linkage.
The Section 6 present invention is in the solder transfer substrate of the Section 1 present invention,
Compared with described adhesive linkage, the described basal layer compression ratio when heating is bigger.
The Section 7 present invention is the manufacture method of a kind of solder transfer substrate, including,
Adhesive linkage formation process, this adhesive linkage formation process is formed bonding on the surface of basal layer with multiple hole
Layer；And
Solder powder loads operation, and this solder powder loads operation and loads multiple on described adhesive linkage in the way of separating gap
Solder powder.
The Section 8 present invention is the manufacture method of a kind of solder transfer substrate, including:
Adhesive linkage formation process, this adhesive linkage formation process forms adhesive linkage on substrate surface；
Solder powder loads operation, and this solder powder loads operation and loads multiple on described adhesive linkage in the way of separating gap
Solder powder；And
Through operation, this through operation forms the hole of the most through described basal layer.
The Section 9 present invention is a kind of solder printing transferring method, including:
Bonding process, this bonding process makes the solder transfer substrate of the Section 1 present invention and the electricity being formed with electrode on surface
Base board or electronic devices and components carry out weight in the way of the face being mounted with described solder powder is relative with the face being formed with described electrode
Merge and carry out heating, pressurizeing, so that described solder powder and described electrode engagement；
Stripper infiltration operation, this stripper infiltration operation makes stripper via the multiple holes being arranged in described basal layer
Infiltrate into described adhesive linkage；And
Transfer substrate stripping process, this transfer substrate stripping process by described solder transfer substrate from described circuit substrate or
Peel off on described electronic devices and components.
The Section 10 present invention is a kind of solder printing transferring method, including:
Bonding process, this bonding process makes the solder transfer substrate of the Section 1 present invention and the electricity being formed with electrode on surface
Base board or electronic devices and components carry out weight in the way of the face being mounted with described solder powder is relative with the face being formed with described electrode
Merge and carry out heating, pressurizeing, so that described solder powder is diffused engaging with described electrode；
Stripper infiltration operation, this stripper infiltration operation makes the stripper containing flux ingredients via being arranged at
State the multiple holes in basal layer to infiltrate into described adhesive linkage；
Transfer substrate stripping process, this transfer substrate stripping process by described solder transfer substrate from described circuit substrate or
Peel off on described electronic devices and components；And
Solder layer formation process, this solder layer formation process is in the fusing point heating carried out above of solder, so that described weldering
Material powder melts.
Invention effect
According to the present invention, it is possible to provide a kind of can carry out more swimmingly peeling off solder transfer substrate, solder transfer substrate
Manufacture method and the solder printing transferring method of use solder transfer substrate.
Accompanying drawing explanation
Fig. 1 is the sectional structure chart schematically showing the solder transfer substrate in embodiments of the present invention 1.
Fig. 2 (a) is the sectional structure chart that the solder powder for illustrating in embodiments of the present invention 1 loads operation.
Fig. 2 (b) is the sectional structure chart that the solder powder for illustrating in embodiments of the present invention 1 loads operation.
Fig. 2 (c) is the sectional structure chart that the solder powder for illustrating in embodiments of the present invention 1 loads operation.
Fig. 2 (d) is the sectional structure chart that the solder powder for illustrating in embodiments of the present invention 1 loads operation.
Fig. 3 (a) is to schematically show the solder transfer substrate used in embodiments of the present invention 1, quasiconductor dress
The sectional structure chart of the manufacture method put.
Fig. 3 (b) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 1
The sectional structure chart of manufacture method.
Fig. 3 (c) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 1
The sectional structure chart of manufacture method.
Fig. 3 (d) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 1
The sectional structure chart of manufacture method.
Fig. 3 (e) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 1
The sectional structure chart of manufacture method.
Fig. 3 (f) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 1
The sectional structure chart of manufacture method.
Fig. 3 (g) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 1
The sectional structure chart of manufacture method.
Fig. 4 (a) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 2
The sectional structure chart of manufacture method.
Fig. 4 (b) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 2
The sectional structure chart of manufacture method.
Fig. 4 (c) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 2
The sectional structure chart of manufacture method.
Fig. 4 (d) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 2
The sectional structure chart of manufacture method.
Fig. 4 (e) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 2
The sectional structure chart of manufacture method.
Fig. 4 (f) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 2
The sectional structure chart of manufacture method.
Fig. 4 (g) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 2
The sectional structure chart of manufacture method.
Fig. 5 (a) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 3
The sectional structure chart of manufacture method.
Fig. 5 (b) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 3
The sectional structure chart of manufacture method.
Fig. 5 (c) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 3
The sectional structure chart of manufacture method.
Fig. 5 (d) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 3
The sectional structure chart of manufacture method.
Fig. 5 (e) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 3
The sectional structure chart of manufacture method.
Fig. 5 (f) is the semiconductor device schematically showing and using the solder transfer substrate in embodiments of the present invention 3
The sectional structure chart of manufacture method.
Fig. 6 (a) is the sectional structure chart schematically showing the solder transfer substrate in embodiments of the present invention 4, Fig. 6
B () is the plan structure figure schematically showing the solder transfer substrate in embodiments of the present invention 4.
Fig. 7 (a)～Fig. 7 (d) is to schematically show the half of the solder transfer substrate used in embodiments of the present invention 4
The sectional structure chart of the solder printing transferring method in the manufacture method of conductor device.
Fig. 8 is cuing open of the solder transfer substrate representing embodiments of the present invention 1 and the circuit substrate configuring corresponding thereto
Face structure chart.
Fig. 9 (a)～Fig. 9 (e) is the explanatory diagram of the operation of the formation solder layer (precoating) in existing embodiment.
Figure 10 (a)～Figure 10 (c) is to schematically show to utilize existing solder formation technology in fragility and to have low dielectric
The amplification profile structure chart of the operation of solder layer is formed on the electrode terminal of the semiconductor element of constant film.
Detailed description of the invention
Hereinafter, referring to the drawings embodiments of the present invention are illustrated.
(embodiment 1)
Hereinafter, to the solder transfer substrate in embodiments of the present invention 1, the manufacture method of solder transfer substrate and
The manufacture method using the semiconductor device of solder transfer substrate illustrates.
Fig. 1 is the sectional structure chart schematically showing the solder transfer substrate in embodiments of the present invention 1.
As it is shown in figure 1, the solder transfer substrate 5 of present embodiment 1 includes: basal layer 1, be configured on basal layer 1 viscous
Connect layer 2, the multiple solder powder 3 being loaded in the way of bonding on adhesive linkage 2.
Basal layer 1 is the base material with multiple hole, and its thickness s1 is 0.020～2.0mm.This base material with multiple hole is
The material being made up of fiber, such as, can use cotton linter (リ Application タ) (Tokyo special paper industry Co., Ltd. system, commodity
Name), cellulosic substrates or TOP plate (the ト ッ プ ボ such as PACOPADS (パ U パ ッ De) (M Co., Ltd.'s aterial system, trade name)
De) (Yamauchi Corp's system, trade name), ACE plate (エ ス ボ De) (Ichikawa Woolen Textile Co., Ltd.'s system, trade name),
Chu co-flow NS plate (チ ュ U Off ロ NS ボ De) (Chuki Chemical Industries Co., Ltd.'s system, trade name) etc. is knitted
Cloth material or the composite that they are combined.
Thus, owing to basal layer 1 is the base material being made up of fiber, and inside has multiple hole, therefore, adds described later
The inclination of the depth of parallelism of metal can be absorbed when heat, pressurization, play buffering solder transfer sheet being uniformly heated up, pressurizeing
The effect of material.Additionally, hereinafter will carry out detailed narration, basal layer 1 plays the material making stripper be prone to penetrate into basal layer
In material and until the effect of penetration material of bonding agent.It addition, one of the porous member of the corresponding present invention of this basal layer 1 is shown
Example.
Adhesive linkage 2 is such as made up of bonding agents such as acrylic compounds, silicon class, rubber-like.
Solder powder 3 uses SnAgCu, SnAgBiIn, SnZnBi, Sn, In, SnBi etc..
The thickness a1 of adhesive linkage 2 freely can set according to the diameter of solder powder 3.Such as, a diameter of in solder powder 3
2～during 12 μm, preferably the thickness a1 of adhesive linkage 2 is set to 5～100 μm.
Then, the manufacture method of the solder transfer substrate of present embodiment 1 is illustrated.
First, the basal layer 1 that the thickness being made up of cellulose is s1 forms the adhesive linkage 2 that thickness is a1.This operation
One example of the bonding agent formation process of the corresponding present invention.
Then, solder powder 3 is attached on this adhesive linkage 2.Use rubber resin as the bonding agent of this adhesive linkage 2.
Additionally, the composition of solder powder 3 for example, Sn3Ag0.5Cu.Fig. 2 (a)～Fig. 2 (d) is the solder for present embodiment 1 is described
Powder loads the sectional structure chart of operation.
As shown in Fig. 2 (a), adhesive linkage 2 is configured with mask 70, this mask 70 has multiple predetermined configurations solder powder 3
Configuration section 71.Then, as shown in Fig. 2 (b), after utilizing such as bristle etc. to provide multiple solder powder 3 from mask 70, remove
Remove mask 70.Then, as shown in Fig. 2 (c), air feeder 72 is utilized to blow away the solder powder 3 providing configuration section 71 with outer portion,
As shown in Fig. 2 (d), make the solder powder 3 being arranged in each configuration section 71 remain on adhesive linkage 2, thus make solder and turn
Print base material 5.
Owing to utilizing mask 70 solder powder 3 to be attached on adhesive linkage 2 as described above, in solder powder 3 shape to each other
Become interval.It addition, by removing unnecessary solder powder 3, solder powder 3 can be configured to thickness the most certain.It addition, this figure
The solder powder of the operation correspondence present invention of 2 (a)～Fig. 2 (d) loads an example of operation.Additionally, be not limited to bristle, it is possible to
To provide solder powder 3 by screen cloth.
As it has been described above, made solder transfer substrate 5.In present embodiment 1, such as, the thickness s1 of basal layer 1 is set as
1.5mm, the thickness a1 of adhesive linkage 2 are set as that 0.050mm, the particle diameter of solder powder 3 are set as 0.002～0.012mm.Herein, if
Determine basal layer 1 and the respective material of adhesive linkage 2, density etc., so that bearing phase under the condition of high temperature (such as, 190～210 DEG C)
In the case of load, the compression ratio of adhesive linkage 2 is bigger than basal layer 1.
In present embodiment 1, use and have adjusted the material of cellulose concentration as basal layer 1, so that its compression ratio reaches
To 20～40% (when having pressed 0.5Mpa rising happiness dragon measuring instrument result).
Then, the manufacture method of the semiconductor device of the solder transfer substrate using present embodiment 1 is illustrated, and
And, an example of the solder printing transferring method of the present invention is described the most simultaneously.
Fig. 3 (a)～Fig. 3 (g) is the quasiconductor dress schematically showing and using the solder transfer substrate 5 in present embodiment 1
The sectional structure chart of the manufacture method put.Hereinafter, Fig. 3 (a)～the Fig. 3 (g) system to the semiconductor device of present embodiment 1 are used
The method of making illustrates.
As shown in Fig. 3 (a), in the drawings, the downside of solder transfer substrate 5 is provided with semiconductor element 6.At this semiconductor element
The film having low dielectric constant (Ultra LowK) 7 being internally formed fragility of part 6, in Fig. 3 (a), in this solder transfer substrate 5 one
The multiple projected electrodes 8 being such as made up of it are formed with Au/NiP on electrode pad 12 on the surface of side.It addition, projected electrode
8 is rectangular when overlooking.Additionally, the part being formed without projected electrode 8 on semiconductor element 6 surface covers such as nitrogen
The dielectric films such as SiClx 9.
Such as, the height of projected electrode 8 is 0.008～0.013mm, and utilizes non-electrolytic shikishima plating process to be formed as
The spacing of 0.050mm.
It addition, herein, the electronic devices and components of semiconductor element 6 correspondence of the object formed as the solder layer present invention
One example.
First, as shown in Fig. 3 (a), solder transfer substrate 5 and semiconductor element 6 are with the solder powder 3 of solder transfer substrate 5
The mode relative with the projected electrode 8 of semiconductor element 6 configures.
Then, as shown in Fig. 3 (b), the face being mounted with solder powder 3 of solder transfer substrate 5 be formed with projected electrode 8
Face overlaps, and carries out heating, pressurizeing.Soften adhesive linkage 2 by heating, make solder powder 3 imbed in adhesive linkage 2, and solder
Powder 3 is mutually diffused engaging with projected electrode 8 on the interface of projected electrode 8.It addition, between solder powder 3 exists each other
Every, adhesive linkage 2 enters between solder powder 3, and therefore, solder powder 3 adjacent one another are will not be connected because of melted.It addition, after Ruan Huaing
Adhesive linkage 2 mutually bonding with the solder powder 3 on projected electrode 8 and projected electrode 8.
Herein, the compression ratio of the adhesive linkage 2 under the condition of high temperature (such as 190～210 DEG C) is wanted than the compression ratio of basal layer 1
Height, therefore, there is bigger deformation in adhesive linkage 2 compared with basal layer 1 so that the part that do not contacts with projected electrode 8 and with prominent
Part, adhesive linkage 2 thickness playing electrode 8 contact is different.Not in contact with thickness a2 and the heating of part, initial before pressurization
Thickness is roughly the same, and on the other hand, the thickness b2 of the part contacted with projected electrode 8 is greatly reduced.Such as, a2 is
0.045mm, b2 are then 0.030～0.035mm.Known it is said that in general, bonding time stress the strongest, i.e. bonding agent is more pressed
Contracting, then adhesive strength is the strongest.Therefore, decrement is bigger projected electrode 8 and adhesive linkage 2 are firmly bonded.This Fig. 3 (b) institute
One example of the solder bonds operation of the operation correspondence present invention shown.
Then, as shown in Fig. 3 (c), the semiconductor element 6 being pasted with solder transfer substrate 5 is impregnated in stripper.Stripping
Chaotropic uses such as ethanol, isopropanol etc..Herein, by forming multiple hole on basal layer 1, and utilize dipping, make stripping
Chaotropic penetrates in basal layer 1, and infiltrates into adhesive linkage 2.Then, stripper enters (with reference to black arrow) in adhesive linkage 2, viscous
Connect layer 2 the most swelling (with reference to white arrow).And, stripper enters into bonding agent and the solder powder 3 of adhesive linkage 2
Interface in, the adhesive strength between bonding agent and solder powder 3 and bonding agent and projected electrode 8 can reduce.
Now, the compression ratio of the adhesive linkage 2 of the part contacted with projected electrode 8 is than the part not contacted with projected electrode 8
Wanting height, therefore expansion rate is bigger.Especially in the part contacted with projected electrode 8, gluing between adhesive linkage 2 and projected electrode 8
Connect intensity to reduce, thus also there is the effect being prone to make solder transfer substrate 5 peel off.
Additionally, it is possible to carry out in a liquid heating, applying ultrasound.In ensuing stripping process, it is possible to less
Power peel off solder transfer substrate 5.
It addition, for the method providing stripper to solder transfer substrate 5, even if not using infusion process, it is possible to use
Spin coating, coating machine, embedding, coater etc., as long as the method providing stripper to whole solder transfer substrate 5.This Fig. 3
One example of the stripper infiltration operation of the operation correspondence present invention shown in (c).
It follows that as shown in Fig. 3 (d), solder transfer substrate 5 is peeled off from semiconductor element 6.Due to projection electricity
Solder powder 3 on pole 8 engages with projected electrode 8, therefore can remain on projected electrode 8.On the other hand, owing to solder is with viscous
Connect the adhesive strength that the adhesive strength between agent (adhesive linkage 2) is more than between bonding agent (adhesive linkage 2) and dielectric film 9, therefore, prominent
The solder powder 3 risen on the dielectric film 9 outside electrode 8 is taken away by the adhesive linkage 2 of solder transfer substrate 5 side.Thus, solder is become
Powder 3 is bonded on the state on projected electrode 8.
Additionally, impregnated by the stripper of front operation so that bonding between the bonding agent of adhesive linkage 2 with projected electrode 8
Intensity is less than the boundary strength of the film having low dielectric constant 7 under projected electrode 8, therefore, it is possible to peel off solder transfer substrate 5 and will not
Produce the stripping of film having low dielectric constant 7, cracking.The transfer substrate stripping process of the operation correspondence present invention shown in this Fig. 3 (d)
One example.
Hereafter, after providing scaling powder 10 from the teeth outwards as Fig. 3 (e), put into as Fig. 3 (f) in reflow ovens, make
Solder powder 3 is the most melted, thus forms solder layer 30.Melted by being made as above so that the height of solder becomes equal
Even, when flip-chip is installed later, can engage more reliably.Afterwards, can be carried out as shown in Fig. 3 (g)
Remove scaling powder.
Then, by semiconductor element 6 flip-chip eliminating scaling powder is installed on substrate, it is possible to produce half
Conductor device.
Herein, the stripping process to solder transfer substrate 5 compares the explanation of result.
The most like that, using the basal layer that there is not the hole that stripper can be made to pass through, and do not using the situation of stripper
Under, solder transfer substrate 5 boundary strength interelectrode with Au-Ni after the solder powder 3 in 180 ° of disbonded test methods melts is
10N/25mm, in contrast, according to present embodiment 1, then can be reduced to 2N/25mm.
As it has been described above, according to the solder transfer substrate 5 of present embodiment 1, ooze owing to being formed for stripper on basal layer
Saturating multiple holes, therefore, even if fragile and have in the semiconductor element of dielectric film, also can reduce the dielectric film of fragility
Stripping, the generation of cracking, especially can reduce the stripping of dielectric film under electrode pad, the generation of cracking so that solder turns
The stripping of print base material becomes relatively simple.
Additionally, according to present embodiment 1, owing to multiple solder powder 3 are configured to the most certain thickness, and transferred
On projected electrode, accordingly, it is capable to the deviation of suppression solder transfer amount, and the solder layer of suitable thickness can be formed more reliably.
Additionally, in recent years, in order to improve productivity, also exist and make semiconductor element heavy caliber (such as, diameter
300mm), make the requirement that substrate maximizes, but have the following problems: that in large-area metal pattern, it is ensured that heat, add and press-fit
The upper metal pattern put, the flatness of lower metal pattern, the depth of parallelism are extremely difficult, it is impossible to add in identical heating condition opposite
Heat, pressurization, it is possible to the situation that solder bridge joint is bad, solder transfer amount is not enough can occur.But, in present embodiment 1, due to
Basal layer 1 is the base material being made up of fiber, and has resiliency, therefore, can absorb the parallel of metal pattern when heating, pressurization
The inclination of degree, plays the effect of padded coaming heated solder transfer sheet equably, pressurize.
Therefore, even if in bigbore semiconductor element, also can to carry out in heating condition opposite evenly heating,
Pressurization.
(embodiment 2)
Hereinafter, to the solder transfer substrate in embodiments of the present invention 2, the manufacture method of solder transfer substrate and
The manufacture method using the semiconductor device of solder transfer substrate illustrates.
The basic structure of the solder transfer substrate of present embodiment 2 is identical with embodiment 1, but basal layer and adhesive linkage
Compression ratio under the condition of high temperature is different from embodiment 1.Additionally, mark identical mark for the structure identical with embodiment 1
Number.
Fig. 4 (a)～Fig. 4 (g) is the quasiconductor dress schematically showing and using the solder transfer substrate 50 in present embodiment 2
The sectional structure chart of the manufacture method put.
As shown in Fig. 4 (a), the solder transfer substrate 50 of present embodiment 2 includes: basal layer 11, be configured at basal layer 11
On adhesive linkage 21, multiple solder powder 3 of being loaded in the way of bonding on adhesive linkage 21.
Basal layer 11 is the base material with multiple hole, and its thickness s1 is 0.020～2.0mm.This has the base material in multiple hole
It is the material being made up of fiber, such as, cotton linter (リ Application タ) (Tokyo special paper industry Co., Ltd. system, business can be used
The name of an article), cellulosic substrates or TOP plate (the ト ッ プ such as PACOPADS (パ U パ ッ De) (M Co., Ltd.'s aterial system, trade name)
ボ De) (Yamauchi Corp's system, trade name), ACE plate (エ ス ボ De) (Ichikawa Woolen Textile Co., Ltd.'s system, commodity
Name), Chu co-flow NS plate (チ ュ U Off ロ NS ボ De) (Chuki Chemical Industries Co., Ltd.'s system, trade name)
Etc. cloth materials or composite that they are combined.
Adhesive linkage 21 is such as made up of bonding agents such as acrylic compounds, silicon class, rubber-like.Solder powder 3 use SnAgCu,
SnAgBiIn, SnZnBi, Sn, In, SnBi etc..
Herein, the result pressed basal layer 11 and adhesive linkage 21 by identical load is, the condition of high temperature (190～
210 DEG C) under the compression ratio of basal layer 11 bigger than the compression ratio of adhesive linkage 21.That is, in present embodiment 2, in the condition of high temperature
Under, the magnitude relationship of the compression ratio of basal layer 11 and adhesive linkage 21 and the basal layer 1 of embodiment 1 and the compression ratio of adhesive linkage 2
Magnitude relationship contrary.
It addition, the manufacture method of the solder transfer substrate 50 of present embodiment 2 is identical with embodiment 1, by cellulose
It is formed with, on the basal layer that thickness is s1 11 constituted, the adhesive linkage 21 that thickness is a1.Use rubber resin as adhesive linkage 21
Bonding agent.Then, attach to solder powder 3, on this adhesive linkage 21, produce solder transfer substrate 50.It addition, solder powder 3
Composition for example, Sn3Ag0.5Cu, and bonding agent is such as formed by rubber resin.
In present embodiment 2, such as, the thickness s1 of basal layer 11 is set as 1.5mm, and the thickness a1 of adhesive linkage 21 is set as
0.050mm, solder particle diameter are set as 0.002～0.012mm.Herein, in present embodiment 2, use and have adjusted cellulose concentration
Material as basal layer 11 so that its compression ratio reaches 70～95% (rising happiness dragon measuring instrument when having pressed 0.5Mpa
Result).Thus, by adjusting cellulose concentration, the compression ratio that can make basal layer 11 is different from embodiment 1.
As it has been described above, set basal layer 11 and the respective material of adhesive linkage 21, density etc., so that in the condition of high temperature (example
As, 190～210 DEG C) under bear identical load in the case of, the compression ratio of basal layer 11 is bigger than adhesive linkage 21.
Then, the manufacture method of the semiconductor device of the solder transfer substrate using present embodiment 2 is illustrated, and
And, an example of the solder printing transferring method of the present invention is described the most simultaneously.
As shown in Fig. 4 (a), at the film having low dielectric constant (Ultra LowK) being internally formed fragility of semiconductor element 6
7, the electrode pad 12 on the surface of this solder transfer substrate 50 side is formed such as be made up of Au/Ni multiple prominent
Play electrode 8.It addition, projected electrode 8 is rectangular when overlooking.Additionally, semiconductor element 6 surface be formed without projection electricity
The part of pole 8 covers the dielectric film 9 of such as silicon nitride etc..
Such as, the height of projected electrode 8 is 0.008～0.013mm, and utilizes electrolytic plating process to be formed as 0.050mm
Spacing.
First, as shown in Fig. 4 (a), solder transfer substrate 50 and semiconductor element 6 are with the solder powder of solder transfer substrate 50
3 modes relative with the projected electrode 8 of semiconductor element 6 configure.
Then, as shown in Fig. 4 (b), the face being mounted with solder powder 3 and the semiconductor element 6 of solder transfer substrate 50 is made
The face being formed with projected electrode 8 overlaps, and carries out heating, pressurizeing.Owing to basal layer 11 compression ratio compared with adhesive linkage 21 is higher,
Therefore, even if semiconductor element 6 is heavy caliber wafer as such as diameter 300mm, also function to the effect of padded coaming, absorb
Metal pattern flatness to each other, the difference of the depth of parallelism, it is possible to provide uniformly on the projected electrode in the 300mm wafer of region configuration
Stress.
Additionally, due to the compression ratio of basal layer 11 is higher than the compression ratio of adhesive linkage 21, therefore basal layer 11 absorbs projection
The thickness of electrode 8, produces the deformation bigger than adhesive linkage 21.Therefore, the thickness of the adhesive linkage 21 of the part contacted with projected electrode 8
Degree a4 and the thickness a2 of part that do not contacts with projected electrode 8 is essentially identical with initial stage thickness a1 (heat, pressurize before).Example
As, it is 0.025mm to a1, a2, a4 are then 0.022～0.025mm.The solder of the operation correspondence present invention shown in this Fig. 4 (b) connects
Close an example of operation.
Then, as shown in Fig. 4 (c), the semiconductor element 6 being pasted with solder transfer substrate 50 is impregnated into and has poured stripping into
In the liquid bath of liquid.Stripper uses such as ethanol, isopropanol etc..By being impregnated in liquid bath, stripper will penetrate into base
In bottom 11, until adhesive linkage 21. is then, stripper enters (with reference to black arrow) in adhesive linkage 21, and adhesive linkage 21 is at thickness
On direction swelling (with reference to white arrow).And, stripper enters in the bonding agent of adhesive linkage 21 and the interface of solder powder 3,
Adhesive strength between the bonding agent of adhesive linkage 21 and solder powder 3 and projected electrode 8 can reduce.
Additionally, the shrinkage factor of thickness of the adhesive linkage 21 produced because of pressurization is less, therefore adhesive linkage 21 and projected electrode 8 it
Between adhesive strength can reduce, thus also there is the effect being prone to peel off solder transfer substrate 50.
Additionally, it is possible to heat in stripper, apply ultrasound.Thus, in ensuing stripping process, it is possible to more
Little power peels off solder transfer substrate 50.
It addition, for the method providing stripper to solder transfer substrate 50, even if not using infusion process, it is possible to use
Spin coating, coating machine, embedding, coater etc., as long as give, solder transfer substrate 50 is overall provides the method for stripper at once.This figure
One example of the stripper infiltration operation of the operation correspondence present invention shown in 4 (c).
It follows that as shown in Fig. 4 (d), solder transfer substrate 50 is peeled off.Due to the weldering on projected electrode 8
Material powder 3 engages with projected electrode 8, therefore can remain on projected electrode 8.On the other hand, (viscous with bonding agent due to solder
Connect layer 21) between adhesive strength more than adhesive strength between bonding agent (adhesive linkage 21) and dielectric film 9, therefore, projection electricity
Solder powder 3 on dielectric film 9 outside pole 8 can be taken away by the adhesive linkage 21 of solder transfer substrate 50 side.Thus, solder is become
Powder 3 is bonded on the state on projected electrode 8.
Additionally, impregnated by the stripper of front operation so that the adhesive strength between adhesive linkage 21 and projected electrode 8 is less than
The boundary strength of the film having low dielectric constant 7 under projected electrode 8, accordingly, it is capable to peel off solder transfer substrate 50 and will not lead
Cause to produce the stripping of film having low dielectric constant 7, cracking.The transfer substrate stripping process of the operation correspondence present invention shown in this Fig. 4 (d)
An example.
Hereafter, after providing scaling powder 10 from the teeth outwards as Fig. 4 (e), put into as Fig. 4 (f) in reflow ovens,
Make solder powder 3 the most melted, thus form solder layer 30.Afterwards, can be carried out and remove and help weldering as shown in Fig. 4 (g)
Agent.By melted, the height of solder becomes uniform, when flip-chip is installed, can engage more reliably.Then, can lead to
Cross and semiconductor element 6 is carried out flip-chip installation, make semiconductor device.
According to present embodiment 2, not only identically with embodiment 1 by make adhesive linkage 21 expand reduce bonding by force
Degree, and due to compared with embodiment 1 compression ratio of adhesive linkage 21 less, thus with the adhesive strength of projected electrode the most relatively
Little, accordingly, it is capable to solder transfer substrate is peeled off from semiconductor element 6 with more weak peel strength.Such as, 180 ° are made to peel off examination
Test in method, solder powder 3 melted after solder transfer substrate 50 and Au-Ni electrode between boundary strength reduce from 10N/25mm
To 1N/25mm.
(embodiment 3)
Hereinafter, to the solder transfer substrate in embodiments of the present invention 3, the manufacture method of solder transfer substrate and
The manufacture method using the semiconductor device of solder transfer substrate illustrates.
Using the solder transfer substrate 50 identical with embodiment 2 in present embodiment 3, difference is carrying of stripper
For method and stripper contain flux ingredients.Therefore, to illustrate centered by the difference of embodiment 2.Additionally,
For the label that the structure mark identical with embodiment 2 is identical.
Fig. 5 (a)～Fig. 5 (f) is the semiconductor device schematically showing and using the solder transfer substrate in present embodiment 3
The sectional structure chart of manufacture method.
Fig. 5 (a), Fig. 5 (b) are identical with Fig. 4 (a) of embodiment 2, Fig. 4 (b), therefore omit the description.
As shown in Fig. 5 (c), such as, utilize the strippers such as coating machine, spin coating, embedding, rod coater to provide method, come
Whole the offer stripper of the back side 11a of basad layer 11.This stripper comprises flux ingredients.This stripper penetrates into
Inside has in this basal layer 11 of airport, until in adhesive linkage 21, arriving the boundary of projected electrode 8 and adhesive linkage 21 afterwards
Face.Further, adhesive linkage 21 is the most swelling.In figure, the flowing of stripper represents with black arrow, swelling with white arrow
Head represents.
One example of the stripper infiltration operation of the operation correspondence present invention shown in this Fig. 5 (c).
As shown in Fig. 5 (d), when peeling off solder transfer substrate 50, the top of the solder powder 3 of projected electrode 8 is by scaling powder
Composition is covered.Herein, owing to flux ingredients has the effect of release materials, adhesive linkage 21 and projected electrode can therefore be reduced
Adhesive strength between 8, it is thus possible to peel off with lower intensity.Additionally, in Fig. 5 (d), flux ingredients is with label
13 represent.
Then, as shown in Fig. 5 (e), Fig. 5 (f), the semiconductor element 6 covered by flux ingredients 13 is put into backflow
In stove, solder powder 3 occurs melted, thus forms solder layer 30.Operation shown in this Fig. 5 (e) is equivalent to the solder layer of the present invention
One example of formation process.
Then, as shown in Fig. 5 (f), scaling powder residue is removed by cleaning.
Herein, owing to, after stripping, scaling powder covers projected electrode, therefore without using solder flux coating machine, scaling powder
The scaling powder providing device etc. to carry out provides operation, thus also has minimizing manufacturing process, improves productive effect.
Then, utilize flip-chip installation etc. to be installed on substrate by semiconductor element 6, thus produce quasiconductor dress
Put.
The offer method of the stripper according to present embodiment 3, owing to can control offer amount and the offer portion of stripper
Position, provides thus without to the back side of the back side 6a of the semiconductor element 6 without providing stripper, substrate, therefore without by attached
The operation that stripper on the back side is removed, thus there is the productive effect of raising.Additionally, according to this offer method, by
Stripper before providing in the hermetic containers such as such as syringe, therefore can be extended the exchange life-span of stripper, also by keeping
Have and put forward large-duty effect.
Additionally, in present embodiment 3, utilize coating machine etc. to provide the stripper containing flux ingredients but it also may
It is impregnated in the liquid bath pouring this stripper into.
(embodiment 4)
Hereinafter, to the solder transfer substrate in embodiments of the present invention 4, the manufacture method of solder transfer substrate and
The manufacture method using the semiconductor device of solder transfer substrate illustrates.
The basic structure of the solder transfer substrate of present embodiment 4 is identical with embodiment 1, and difference is basal layer
Structure with form through basal layer and the through hole of adhesive linkage, and the offer method of stripper is the most different.Therefore, with this difference
Illustrate centered by Dian.Additionally, mark identical label for the structure identical with embodiment 1.
Fig. 6 (a) is the sectional structure chart schematically showing the solder transfer substrate 500 in embodiments of the present invention 4, figure
6 (b) is the plan structure figure schematically showing the solder transfer substrate 500 in embodiments of the present invention 4.Additionally, Fig. 6 (b)
It it is the figure from below solder transfer substrate 500 observed in Fig. 6 (a).
As shown in Fig. 6 (a), the solder transfer substrate 500 in embodiments of the present invention 4 includes: basal layer 110, formation
Adhesive linkage 2, the solder powder 3 being bonded on this adhesive linkage 2 on this basal layer 110, it is arranged to this basal layer 110 through and should
The through hole 15 of adhesive linkage 2.
Basal layer 110 is the material with resiliency, such as, can use silicon, rubber, PET, PEN etc..Additionally, this embodiment party
The raw material self of the basal layer 110 of formula 4 is not formed and is available for multiple holes that stripper passes through.
It addition, adhesive linkage 2 is such as made up of bonding agents such as acrylic compounds, silicon class, rubber-like.And, solder powder 3 by
SnAgCu, SnAgBiIn, SnZnBi, Sn, In, SnBi etc. are constituted.
Then, the manufacture method of the solder transfer substrate 500 of present embodiment 4 is illustrated.
First, the basal layer 110 that thickness is s1 forms the adhesive linkage 2 that thickness is a1.This operation correspondence present invention's
One example of adhesive linkage formation process.
Then, solder powder 3 is attached on this adhesive linkage 2.The solder powder of this operation correspondence present invention loads the one of operation
Individual example.
Then, the through hole 15 of through basal layer 110 and adhesive linkage 2 is formed.This through hole 15 can be formed by punching etc..Should
One example of the through operation of the operation correspondence present invention.
According to above operation, make solder transfer substrate 5.It addition, the composition of solder powder 3 is for example,
Sn3Ag0.5Cu, and bonding agent is such as formed by rubber resin.Present embodiment 4 is as embodiment 1, such as, and substrate
The thickness s1 of material is set as 1.5mm, the thickness a1 of adhesive linkage be set as 0.050mm, solder particle diameter be set as 0.002～
0.012mm。
Then, the manufacture method of the semiconductor device of the solder transfer substrate using present embodiment 4 is illustrated, and
And, an example of the solder printing transferring method of the present invention is described the most simultaneously.
Fig. 7 (a)～Fig. 7 (d) is the semiconductor device schematically showing and using the solder transfer substrate in present embodiment 4
Manufacture method in the sectional structure chart of solder printing transferring method.
As shown in Fig. 7 (a), fragile and there is the quasiconductor of film having low dielectric constant 7 (such as, Extremely Low-k)
On element 6, projected electrode 8 is set to configure in region on multiple matrixes.Projected electrode 8 is formed on electrode pad 12, example
As being made up of Cu, it is arranged to 0.040mm spacing at equal intervals, and height is 0.020mm.In this solder transfer substrate 500, should
Solder powder 3 configures in the way of relative with the projected electrode 8 of semiconductor element 6.
Then, as shown in Fig. 7 (b), the face being mounted with solder powder 3 and the semiconductor element 6 of solder transfer substrate 500 is made
The face being formed with projected electrode 8 overlaps, and carries out heating, pressurizeing, so that adhesive linkage 2 produces compression.Herein, adhesive linkage
2 is bonding with projected electrode 8.One example of the solder bonds operation of the operation correspondence present invention shown in this Fig. 7 (b).
It follows that as shown in Fig. 7 (c), provide stripper to the back side 110a of solder transfer substrate 500.Then, stripping
Chaotropic is through through hole 15, until adhesive linkage 2, so that adhesive linkage 2 is swelling.By this effect, reduce adhesive linkage 2 and projection electricity
Adhesive strength between pole 8.In figure, the flowing of stripper represents with black arrow, swelling, represents with white arrow.This figure
One example of the stripper infiltration operation of the operation correspondence present invention shown in 7 (c).
As shown in Fig. 7 (d), by solder transfer substrate 500 from the operation that semiconductor element 6 is peeled off, can be with lower
Intensity is peeled off.One example of the transfer substrate stripping process of the operation correspondence present invention shown in this Fig. 7 (d).Afterwards
Operation identical with embodiment 1.
As it has been described above, in present embodiment 4, even if basal layer 110 is not have to be available for multiple air that stripper passes through
The fine and close raw material in hole, but owing to stripper can be injected via through hole, therefore on solder transfer substrate, the boundary of projected electrode
Face is injected stripper become to be relatively easy to.Further, according to this method for implanting, especially with and the solder that engages of projected electrode
Stripper between powder with adhesive linkage utilizes compared with the situation in multiple hole, has the effect being easier to infiltration.
Additionally, basal layer 110 is owing to himself being the material with resiliency, therefore, even for such as 450mm ×
Projected electrode on the large-scale epoxy glass substrate of 450mm, basal layer 110 also can absorb the depth of parallelism between metal pattern, smooth
Degree, thus uniform stress can be applied on projected electrode.
Additionally, also identical with above-mentioned embodiment 3 in present embodiment 4, it is possible in stripper, comprise scaling powder
Point.
It addition, in present embodiment 4, it is possible to use it is formed with multiple hole as embodiment 1 or embodiment 2
Basal layer 1, basal layer 11, the plurality of hole is used for making stripper pass through to adhesive linkage 2 side.In this case, stripper leads to
Cross through hole 15 and basal layer 1, the hole of the raw material self of basal layer 11.
Additionally, in the solder transfer substrate 500 of present embodiment 4, through hole 15 is through basal layer 110 and adhesive linkage 2
Both sides but it also may be the structure only penetrating into adhesive linkage 2 midway, or the structure of the most through basal layer 110.
Additionally, in present embodiment, after the adhesive linkage 2 on basal layer 110 attaches multiple solder powder 3, form through hole
15, but it is not limited to this order.That is, in the case of only forming through hole in basal layer 110, it is also possible to forming adhesive linkage 2
On basal layer 110, form through hole before, and during for forming through hole in basal layer 110 and adhesive linkage 2, it is also possible to
Before attaching multiple solder powder 3, form through hole.
Additionally, in present embodiment 4, about basal layer 110, illustrate that it has resiliency but it also may there is rigidity.
It addition, in above-mentioned embodiment 1～embodiment 4, employ the electronic devices and components such as semiconductor element and carry out
Explanation but it also may be not electronic devices and components but circuit substrate.Fig. 8 is to represent the solder transfer substrate 5 shown in embodiment 1
And the sectional structure chart of the circuit substrate 16 with solder transfer substrate 5 relative configuration.As shown in Figure 8, the base material of circuit substrate 16
On be formed with electrode pad 12, and on electrode pad 12, be formed with projected electrode 8.In such circuit substrate 16, even if
It is this base material and electrode that such as base material is made up of silicon and electrode pad 12 is made up of the Cu more weak with the adhesive force of Si
The structure that the adhesive force of pad is more weak, by the application present invention, can reduce the generation electrode pad when stripping solder transfer substrate
Such situation is peeled off from circuit substrate.
Above, as illustrated by embodiment 1～embodiment 4, according to the solder transfer substrate of the present invention and
Its manufacture method, owing to having multiple hole in base material, therefore can make stripper infiltrate into adhesive linkage, as a result of which it is, solder transfer
The peel strength of base material is less than the boundary strength under electrode pad, the breakdown strength of fragile film, therefore, is peeling off solder transfer
In the operation of base material, the film having low dielectric constant making the fragility under electrode pad, electrode pad also can be prevented peeling-off.
Additionally, due to solder transfer substrate self has resiliency, therefore, even for turning of carrying out to large substrate
Print, also can absorb the inclination of metal pattern, therefore, it is possible to transfer.
Thus, according to solder transfer substrate and the manufacture method thereof of the present invention, the most crisp for having film having low dielectric constant
Electronic devices and components, the circuit substrates such as the semiconductor element of weak film, can reduce the situation that the film of fragility is peeling, ftractures, because of
And the solder layer forming suitable thickness can be transferred more reliably.
Additionally, it is possible to implement present embodiment 1～embodiment 4 simultaneously.
It addition, in above-mentioned embodiment 1～embodiment 4, adhesive linkage 2 has and produces expansion by injecting stripper
Characteristic but it also may not there is this characteristic.
Additionally, any one of basal layer 1 in above-mentioned embodiment 1～embodiment 4, basal layer 11, basal layer 110 is equal
It is the component with resiliency but it also may not there is resiliency.Even if in this case, providing stripping by multiple holes
Chaotropic, thus, compared with existing mode, also can make solder transfer substrate be easier to from semiconductor element and peel off.
Industrial practicality
Solder transfer substrate, the manufacture method of solder transfer substrate and solder printing transferring method involved in the present invention have
Be easier to the effect that solder transfer substrate is peeled off, the semiconductor element that narrows at installing space, have by low dielectric normal
In the installing area of the semiconductor element etc. of interlayer dielectric that number materials are constituted the most effective.
Label declaration
1,11,110 basal layer
2,21 adhesive linkage
3 solder powder
5,50,500 solder transfer substrate
6 semiconductor elements
7 film having low dielectric constants
8 projected electrodes
9 dielectric films
10 scaling powders
12 electrode pads
13 flux ingredients
15 through holes
16 circuit substrates
30 solder layers
Claims (5)
1. a solder transfer substrate, it is characterised in that including:
Basal layer；
It is arranged in the adhesive linkage on described basal layer；And
The multiple solder powder being configured on described adhesive linkage,
On described basal layer, from be not configured with the side of described adhesive linkage to be configured with the side of described adhesive linkage at least formed with
Make multiple holes that stripper passes through,
If described adhesive linkage has injects described stripper, the characteristic expanded,
Compared with described adhesive linkage, the described basal layer compression ratio when heating is relatively big,
The plurality of hole be set to not through to described with the face that described adhesive linkage the contacts basal layer from described basal layer with
The face of described adhesive linkage contact,
The plurality of hole at least forms the inner side to described adhesive linkage.
2. solder transfer substrate as claimed in claim 1, it is characterised in that
Described basal layer is cloth materials.
3. solder transfer substrate as claimed in claim 1, it is characterised in that
Described basal layer is porous member.
4. a solder printing transferring method, it is characterised in that including:
Bonding process, this bonding process makes the solder transfer substrate described in claim 1 and the circuit being formed with electrode on surface
Substrate or electronic devices and components overlap in the way of the face being mounted with described solder powder is relative with the face being formed with described electrode
And carry out heating, pressurizeing, so that described solder powder and described electrode engagement；
Stripper infiltration operation, this stripper infiltration operation makes stripper ooze via the multiple holes being arranged in described basal layer
Thoroughly to described adhesive linkage；And
Transfer substrate stripping process, this transfer substrate stripping process by described solder transfer substrate from described circuit substrate or described
Peel off on electronic devices and components.
5. a solder printing transferring method, it is characterised in that including:
Bonding process, this bonding process makes the solder transfer substrate described in claim 1 and the circuit being formed with electrode on surface
Substrate or electronic devices and components overlap in the way of the face being mounted with described solder powder is relative with the face being formed with described electrode
And carry out heating, pressurizeing, so that described solder powder is diffused engaging with described electrode；
Stripper infiltration operation, this stripper infiltration operation makes the stripper containing flux ingredients via being arranged at described base
Multiple holes in bottom infiltrate into described adhesive linkage；
Transfer substrate stripping process, this transfer substrate stripping process by described solder transfer substrate from described circuit substrate or described
Peel off on electronic devices and components；And
Solder layer formation process, this solder layer formation process is in the fusing point heating carried out above of solder, so that described solder powder
Melted.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-073235 | 2011-03-29 | ||
| JP2011073235 | 2011-03-29 | ||
| PCT/JP2012/000462 WO2012132175A1 (en) | 2011-03-29 | 2012-01-25 | Solder transfer base, method for producing solder transfer base, and method for transferring solder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103444274A CN103444274A (en) | 2013-12-11 |
| CN103444274B true CN103444274B (en) | 2016-11-30 |
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| US5591037A (en) * | 1994-05-31 | 1997-01-07 | Lucent Technologies Inc. | Method for interconnecting an electronic device using a removable solder carrying medium |
| CN1471565A (en) * | 2000-10-18 | 2004-01-28 | �ն��繤��ʽ���� | Energy-beam curable thermal-releasable pressure-sensitive adhesive sheet and method for producing cut pieces using the same |
| CN100375262C (en) * | 2003-12-01 | 2008-03-12 | 东京応化工业株式会社 | Substrate supporting plate and stripping method for supporting plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5591037A (en) * | 1994-05-31 | 1997-01-07 | Lucent Technologies Inc. | Method for interconnecting an electronic device using a removable solder carrying medium |
| CN1471565A (en) * | 2000-10-18 | 2004-01-28 | �ն��繤��ʽ���� | Energy-beam curable thermal-releasable pressure-sensitive adhesive sheet and method for producing cut pieces using the same |
| CN100375262C (en) * | 2003-12-01 | 2008-03-12 | 东京応化工业株式会社 | Substrate supporting plate and stripping method for supporting plate |
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