CN103442508A - Microstructural plasma device based on printed circuit board process - Google Patents

Microstructural plasma device based on printed circuit board process Download PDF

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Publication number
CN103442508A
CN103442508A CN2013103671357A CN201310367135A CN103442508A CN 103442508 A CN103442508 A CN 103442508A CN 2013103671357 A CN2013103671357 A CN 2013103671357A CN 201310367135 A CN201310367135 A CN 201310367135A CN 103442508 A CN103442508 A CN 103442508A
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substrate
micro
plasma device
microcavity
copper foil
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CN103442508B (en
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孙岩洲
赵来军
张展
韦延方
卫林林
巩银苗
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Henan University of Technology
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Henan University of Technology
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Abstract

Disclosed is a microstructural plasma device based on a printed circuit board process. A microcavity of the device is composed of an upper electrode, a middle medium layer and a lower electrode. Each unit of the device is driven by the upper electrode and the lower electrode. A substrate is made of insulating medium epoxy resin materials. Two layers of copper foil are manufactured on the upper surface and the lower surface of the substrate. Certain safe distances are reserved between the edges of the layers of copper foil and the edge of the substrate. The cylindrical microcavity semi-through hole units are arranged in an array mode. Microcavity semi-through holes just penetrate through the upper electrode and do not penetrate through the middle medium layer and the lower electrode. In the array, the distances between rows are not smaller than those between columns. The two layers of copper foil which are separated by the substrate are used as the upper electrode and the lower electrode, the two electrodes are respectively led out of amphenol connectors, and the coplanar-type microstructural plasma device based on the printed circuit board process is obtained.

Description

A kind of micro-structural plasma device based on printed circuit board process
Technical field
The present invention relates to a kind of micro-structural plasma device based on printed circuit board process.
Background technology
In recent years, the low-temp plasma source that micro discharge plasma is novel as a class, with its application prospect widely, and the Maximum Possibility of opening up many emerging low temperature plasma basic research fields, one of the popular research topic in low temperature plasma field become.
So-called micro-structural discharge plasma, refer to the plasma in submillimeter arrives the micron dimension scope by its space characteristics dimensional constraints.It is normally produced by the miniaturization of conventional plasma device.Although it is developed by conventional plasma, due to the electric discharge size, to narrow down to millimeter magnitude even lower, makes micro discharge plasma usually can operate under atmospheric pressure.This compares with conventional plasma, the variation that some are new occurred, such as higher plasma density, better stability and other new characteristics and advantages of bringing thus.As everyone knows, the puncture voltage of gas is followed Paschen's law, that is to say, firing voltage is decided by the product (pd) of gas pressure intensity P and electrode gap d, and this product is less, and firing voltage is just lower, and plasma discharge is just more stable, and discharging efficiency is just higher.Microplasma discharge is followed the Paschen discharging condition equally, and this has just determined to operate in the small-sized property of the microplasma device under atmospheric pressure, thereby makes this device light and handy, portable.Simultaneously, the vacuum system that micro discharge plasma is used without conventional plasma, not only provide cost savings, and also saved a large amount of vacuum and obtained the time.From this angle, microplasma is again convenient, economical and efficiently.In addition, the microplasma discharge in hyperbaric environment is mainly leading by three-body collision mechanism, and this not only is conducive to the enhancing of radiation intensity, also is conducive to the raising of discharge current density, thereby is conducive to improve plasma density simultaneously.These characteristics and advantages of microplasma provide application space widely for the fields such as processing of its acquisition at ultraviolet source, macro Epidemiological Analysis system, biomedicine, material surface modifying and processing, environmental contaminants.Therefore the micro-structural discharge plasma is that low temperature plasma has been opened up a brand-new field with having much attraction.
Lower temperature plasma technology has obtained application widely in many scientific domains such as microelectronics, material, chemical industry, machinery and environmental protection.For example, on electronic display technology, plasma display panel (PDP) (PDP) is exactly the successful Application of technology of plasma discharge on display industry; In material science research, using plasma physical gas phase deposition technology and chemical vapour deposition technique can synthesize some new function thin-film materials; In semi-conductor industry, the using plasma lithographic technique can be processed very lagre scale integrated circuit (VLSIC) etc.; And on chemical research, using plasma polymerization technique, can prepare~a little high molecular film materials etc.
The successful Application of technology of plasma discharge on display industry is exactly plasma display panel (PDP) (PDP).Color plasma display panel is one of primary candidate of high definition (HDTV) display screen Future Development, and plasma display panel (PDP) is in exquisiteness, and there is the advantage of its uniqueness high-res and large-area flat-plate display aspect.
Recent years, micro-structural discharge plasma device is because its unique flash-over characteristic has caused increasing concern.In the demonstration field, the micro-structural plasma discharge shows the little and high advantage of luminous efficiency of Pixel Dimensions.Meanwhile, the manufacture craft that various micro-structural and micro structural component have occurred.1997, the people such as Eden made the micro-structural plasma device on silicon, and improved constantly the size of array in ensuing several years.1999, Kunhardt and Becker proposed Building With Capillary Plasma electrode discharge (CPED).2004, Park arrived PDP by the CPED structure applications, and has studied its electric discharge and the characteristics of luminescence.2005, Kim and Eden made micro-plasma array in employing photoetching process on glass.
Increasing people pays close attention to and the research microplasma, can predict in the near future, and it will be widely used in the fields such as demonstration, photodetection, biological photoelectric.But the shortcoming of in the past making micro structural component is: need high-accuracy processing instrument and advanced technology technique to do support.Such as using thermal oxidation process to obtain SiO2 film that 5-15nm is thick as dielectric barrier, the such technique of film of making nanometer scale is difficult to obtain in common experiment and processing site; Use the methods such as photoetching, chemical etching and plating, make two sides and be coated with 0.1 millimeters thick microcavity, need to make of multiple Precision Method, require the producer to there is very high technical ability, certain difficulty is arranged.
Summary of the invention
Technical problem solved by the invention is to provide a kind of micro-structural plasma device based on printed circuit board process, to solve the shortcoming in the above-mentioned background technology.
Technical scheme of the present invention is:
This device microcavity is comprised of top electrode, middle dielectric layer and bottom electrode, and each unit of device all adopts upper/lower electrode to be driven.Take the dielectric epoxide resin material as substrate, and the length and width size of substrate is according to the number of array and determine, and the thickness range of substrate is: 0.6-1.0mm.Make two-layer Copper Foil in the upper and lower surface of substrate, the copper thickness scope is: 0.1-0.15mm.Stay certain safe distance between Copper Foil edge and substrate edge, minimum for 5mm is advisable, to prevent edge flashing.Make on the Copper Foil of upper strata and form the microcavity that size is suitable, the length of side of microcavity (or diameter) size is about the 0.1mm left and right, microcavity half through hole (just through top electrode and not through middle dielectric layer and bottom electrode) unit is arranged in array, and the distance in array between row and row is not less than the distance between row and row.The upper and lower two-layer Copper Foil separated by the resin material base plate, as upper and lower two electrodes, is drawn respectively binding post by two electrodes, obtains a kind of coplanar type micro-structural plasma device based on printed circuit board process.
Micro-structural plasma device based on printed circuit board process proposed by the invention has following advantage:
1) device adopts the dielectric epoxide resin material as substrate, and this material processing technique maturation is simple, very easily manufactures.
2) device is usingd Copper Foil as electrode, adopts printed circuit board process to make electrode, technique simple possible.
2) device structure design is simple, and the process procedure related to is less, and degree-of-difficulty factor is lower, is easy to make.
3) environmental factor of generation electric discharge is less demanding, can carry out at normal temperatures and pressures.
4) voltage of generation electric discharge is not extra-high-speed, in the 3kV left and right, can discharge.
The accompanying drawing explanation
The front cross-sectional view of the discharge cell structure of the round micro-structural plasma device of Fig. 1 based on printed circuit board process;
The back side sectional view of the round discharge cell structure of the micro-structural plasma device of Fig. 2 based on printed circuit board process;
The view in transverse section of the round discharge cell structure of the micro-structural plasma device of Fig. 3 based on printed circuit board process;
The sectional view of the square type discharge cell structure of the micro-structural plasma device of Fig. 4 based on printed circuit board process;
The sectional view of the ellipse discharge cell structure of the micro-structural plasma device of Fig. 5 based on printed circuit board process;
Embodiment
Below the present invention is described in further detail.
This device microcavity is comprised of top electrode, middle dielectric layer and bottom electrode, and each unit of device all adopts upper/lower electrode to be driven.Take the dielectric epoxide resin material as substrate, in the upper and lower surface of substrate, make two-layer Copper Foil, between Copper Foil edge and substrate edge, stay certain safe distance.Columniform microcavity half through hole (just through top electrode and not through middle dielectric layer and bottom electrode) unit is arranged in array, and the distance in array between row and row is not less than the distance between row and row.The upper and lower two-layer Copper Foil separated by base plate, as upper and lower two electrodes, is drawn respectively binding post by two electrodes, obtains a kind of coplanar type micro-structural plasma device based on printed circuit board process.
Take the dielectric epoxide resin material as substrate, and the length and width size of substrate is according to the number of array and determine, and the thickness range of substrate is: 0.6-1.0mm.
The copper thickness scope of making in the epoxy resin substrate is: 0.1-0.15mm.
Safe distance between Copper Foil edge and substrate edge is minimum is advisable for 5mm.
The microcavity that passes upper strata Copper Foil and substrate and make is of a size of 0.1mm.
The through hole degree of cylindrical microcavity unit is not for just passing middle dielectric layer and bottom electrode through top electrode.
In the microcavity cell array, the spacing between row and row is 0.3mm, and the spacing of listing between row is 0.2-0.3mm.
The binding post of described extraction electrode, at physics diagonal position (edge of keeping to the side, the reservation safe distance 3*3mm of upper/lower electrode 2get final product).
Figure 1 shows that the positive cross section enlarged drawing of the round discharge cell structure of the micro-structural plasma device based on printed circuit board process; In figure, 110 is column type microcavity unit, and 120 is top electrode, and 130 is middle insulated medium, and 140 is top electrode extraction electrode terminal.It is to realize like this: choose 0.6-1.0mm thick, the dielectric epoxide resin material of certain size size, first carry out the methods such as surface clean, polishing, mechanical polishing and process material surface, makes its surface cleaning smooth smooth; Then clean material, remove the surface resin powder, and it is dried.Epoxy resin material plate is flooded in dicy-curing agent, form through hot pressing with the electrolysis red copper foil on the material two sides.Then adopt wet lithography process to make and form required electrode size structure.Finally adopt laser drilling process to make microcavity.After making microcavity array, at the diagonal position of the upper and lower surface electrode of array, make lead terminal, extraction electrode.
The back side sectional view of the round discharge cell structure that Fig. 2 is the micro-structural plasma device based on printed circuit board process; In figure, 130 is middle insulated medium, and 150 is bottom electrode, and 160 is bottom electrode extraction electrode terminal.Fitting like a glove of the physical dimension of backplate and top electrode, can under equal conditions discharge any microcavity in array as seen from the figure.The position of electrode terminal 160 and top electrode, in diagonal position, have played the fail safe of device work like this, in order to avoid mistake is touched, cause short trouble etc.
Fig. 3 is based on the lateral cross section enlarged drawing of round discharge cell structure of the micro-structural plasma device of printed circuit board process; 110 is microcavity, and 120 is top electrode, and 130 is middle insulated medium, and 150 is bottom electrode, and 160 is bottom electrode extraction electrode terminal.As can be seen from the figure, the degree of depth of microcavity 110 not through middle dielectric layer and bottom electrode, is the physical condition that provides of micro discharge through top electrode just.
Fig. 4 is based on the positive cross section enlarged drawing of square type discharge cell structure of the micro-structural plasma device of printed circuit board process; Round discharge cell structure with respect to the micro-structural plasma device, its microcavity half through hole (just through top electrode and through middle dielectric layer and bottom electrode) unit be shaped as rectangle, all the other structures are identical with the round discharge cell structure of micro-structural plasma device.
Fig. 5 is based on the positive cross section enlarged drawing of ellipse discharge cell structure of the micro-structural plasma device of printed circuit board process; Round discharge cell structure with respect to the micro-structural plasma device, its microcavity half through hole (just through top electrode and through middle dielectric layer and bottom electrode) unit be shaped as rectangle, all the other structures are identical with the round discharge cell structure of micro-structural plasma device.

Claims (6)

1. the micro-structural plasma device based on printed circuit board process, this device microcavity is by top electrode, middle dielectric layer and bottom electrode form, each unit of device all adopts upper/lower electrode to be driven, take the dielectric epoxide resin material as substrate, make two-layer Copper Foil in the upper and lower surface of substrate, stay certain safe distance between Copper Foil edge and substrate edge, columniform microcavity half through hole unit is arranged in array, distance in array between row and row is not less than the distance between row and row, the upper and lower two-layer Copper Foil separated by base plate is as upper and lower two electrodes, two electrodes are drawn respectively to binding post, obtain a kind of coplanar type micro-structural plasma device based on printed circuit board process.
2. micro-structural plasma device according to claim 1, is characterized in that, take the dielectric epoxide resin material as substrate, and the length and width size of substrate is according to the number of array and determine, and the thickness range of substrate is: 0.6-1.0mm.
3. micro-structural plasma device according to claim 1, is characterized in that, the copper thickness scope of making in the epoxy resin substrate is: 0.1-0.15mm.
4. micro-structural plasma device according to claim 1, is characterized in that, the safe distance between Copper Foil edge and substrate edge is minimum is 5mm.
5. micro-structural plasma device according to claim 1, is characterized in that, the microcavity of making through upper strata Copper Foil and substrate is of a size of 0.1mm.
6. micro-structural plasma device according to claim 1, is characterized in that, the through hole degree of cylindrical microcavity unit is not for just passing middle dielectric layer and bottom electrode through top electrode.
CN201310367135.7A 2013-08-14 2013-08-14 A kind of micro-structural plasma device based on printed circuit board process Expired - Fee Related CN103442508B (en)

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TWI569690B (en) * 2015-01-23 2017-02-01 國立臺灣大學 A plasma generating devices and manufacturing method thereof
CN107343351A (en) * 2016-04-30 2017-11-10 波音公司 For semiconductor microactuator hollow cathode discharge device caused by plasma jet

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI569690B (en) * 2015-01-23 2017-02-01 國立臺灣大學 A plasma generating devices and manufacturing method thereof
CN107343351A (en) * 2016-04-30 2017-11-10 波音公司 For semiconductor microactuator hollow cathode discharge device caused by plasma jet

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