CN101794699B - Configurable two-dimensional micro-plasma array device and preparation method thereof - Google Patents
Configurable two-dimensional micro-plasma array device and preparation method thereof Download PDFInfo
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- CN101794699B CN101794699B CN2010101295473A CN201010129547A CN101794699B CN 101794699 B CN101794699 B CN 101794699B CN 2010101295473 A CN2010101295473 A CN 2010101295473A CN 201010129547 A CN201010129547 A CN 201010129547A CN 101794699 B CN101794699 B CN 101794699B
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Abstract
The invention discloses a configurable two-dimensional micro-plasma array device and preparation method thereof. The device consists of at least two electrode layers and at least one micro-cavity layer which are stacked, the layers are contacted closely, the electrode layers are on the two outermost sides, and the electrode layers and the micro-cavity layer are all provided with at least two positioning holes and are aligned through the positioning holes; a conductive material sheet of a dielectric layer or an insulation sheet made of insulation material is covered on the surface of the micro-cavity layer; the edge of the micro-cavity layer is provided with sunken linear array micro-cavities, and the micro-cavities are isolated by a barrier; the electrode layers are the conductive material sheets; and electrodes are led out from the micro-cavity layer and the electrode layers respectively. The preparation method comprises the following steps: cutting a sheet material into the same rectangular sheets serving as the electrode layers and the micro-cavity layer, aligning the electrode layers with the micro-cavity layer, and assembling the electrode layers and the micro-cavity layers layer by layer as required. The size of a micro-plasma array can be flexibly changed, the process difficulty and cost are lowered, and the device array density, device size and reliability are improved.
Description
Technical field
The present invention relates to a kind of configurable two-dimensional micro-plasma array device and preparation method thereof, belong to the micro-plasma array device field.
Background technology
Near the tradition atmospheric pressure weakly ionized plasma is very unstable, is easy to generate arc discharge especially.But, working gas is limited in the micron-sized space, just can produce stable glow discharge.The plasma that this type of discharge is produced is commonly called " microplasma ".Microplasma have light current from, border feature such as leading phenomenon and high particle concentration, obtained more and more researchers' attention.
The application development of microplasma is very fast, the modal aspects such as display, biologic medical diagnosis and environmentally sensitive that comprise.It is often used as UV ray radiation source and ion source.Aspect environmental improvement, be mainly used in and handle waste gas and volatile organic matter.After little plasma apparatus of making on the Semiconducting Silicon Materials occurs, utilize plasma and interface sensitiveness, can produce the small light sniffer incident ray.Aspect plasma etching,, can realize mask-free photolithography by lighting the micro-plasma array unit of appointed area.Aspect plasma jet, microplasma has remarkable advantages owing to its plasma density is higher, and research in this regard at present also becomes focus gradually.
The microplasma apparatus structure mainly is divided into three layers of through-hole structure of medium/metal/metal, medium/metal/metal three and half through-hole structures, most advanced and sophisticated cathode construction, hollow cathode structure, multi-layered electrode mixed structure and the mesh electrode structure of strengthening.Though little plasma apparatus variety of configurations, but ubiquity complex manufacturing technology, apparatus array area are little, can't addressing etc. shortcoming, micro-plasma array will depend on the increase in light-emitting area, efficient, life-span and the reduction of cost with respect to successes of other competition technology.Therefore also there are very big room for promotion and application prospect in manufacture method and the configuration aspects of seeking the large tracts of land micro-plasma array device.
Summary of the invention
The objective of the invention is to overcome present microplasma and can't take into account large scale and addressable, complex technical process, the technical deficiency that cost is high provide a kind of low cost, large scale, high-resolution, high reliability, addressable configurable two-dimensional micro-plasma array device and preparation method thereof.
Configurable two-dimensional micro-plasma array device of the present invention is by the following technical solutions:
This configurable two-dimensional micro-plasma array device is formed by at least two electrode layers and at least one micro-cavity layer stacked arrangement, contact closely between each layer, two outermost are electrode layer, be equipped with at least two location holes on all electrode layers and the micro-cavity layer, all electrode layers and micro-cavity layer are all alignd by location hole; Micro-cavity layer is the sheet of conductive material of surface coverage dielectric layer, or the insulating trip of insulating material composition; The edge of micro-cavity layer is provided with the linear array microcavity of depression, is kept apart by barrier between each microcavity; Electrode layer is a sheet of conductive material; By difference extraction electrode in micro-cavity layer and the electrode layer.
The stacked arrangement order of electrode layer and micro-cavity layer can be that electrode layer and micro-cavity layer alternate intervals are stacked, is provided with one deck micro-cavity layer between the promptly two-layer electrode layer; Also can be that to have only two outermost be electrode layer, be micro-cavity layer between two electrode layers; Also can be to be provided with two micro-cavity layer between per two electrode layers.
Microcavity can be rectangle, circular arc or other arbitrary graphic.
Microcavity in the micro-cavity layer is surrounded by barrier, forms an enclosed areas, and microcavity does not have opening at apparatus surface, and discharge space is closed in the microcavity.
The sheet of conductive material surface of electrode layer can cover dielectric layer, also can not cover dielectric layer.
The mode of extraction electrode has following several form in micro-cavity layer and the electrode layer:
1. draw first bus electrode by the odd-level in the electrode layer, draw second bus electrode by the even level in the electrode layer.
2. draw first bus electrode by the odd-level in the electrode layer, draw second bus electrode, by drawing the 3rd bus electrode in each micro-cavity layer by the even level in the electrode layer.
3. draw first bus electrode by the odd-level in the electrode layer, draw and second bus electrode by the even level in the electrode layer, draw the 3rd bus electrode by the odd number micro-cavity layer, draw the 4th bus electrode by the even number micro-cavity layer, apply alternating voltage or direct voltage between first bus electrode and second bus electrode, keep electrode as discharge, be responsible for keeping the state of discharge; The 3rd bus electrode and the 4th bus electrode are as addressing electrode, and setting this row is need light or not need to light.
4. draw the 3rd bus electrode by the odd number micro-cavity layer, draw the 4th bus electrode, apply alternating voltage between the 3rd bus electrode and the 4th bus electrode, keep electrode, be responsible for keeping the state of discharge as discharge by the even number micro-cavity layer.
Closely close between all electrode layers and the micro-cavity layer in apparatus of the present invention, the centre is closely linked by external pressure, and the outermost layer of array apparatus is an electrode layer, and gas is sealed within the device and keeps the sealing of gas.The electrode lead-out mode of this array apparatus can be two electrode structures of drawing respectively from two adjacent electrode layers, also can be according to a definite sequence three electrodes, four electrodes or the multi-electrode more of extraction electrode respectively from micro-cavity layer and electrode layer.
The preparation method of above-mentioned configurable two-dimensional plasma array device may further comprise the steps:
(1) the insulation flaky material that can make the conduction flaky material of micro-cavity layer and electrode layer by cutting method and be merely able to make micro-cavity layer cuts into the identical rectangular sheet of size and shape;
(2) make at least two location holes in the identical position of each rectangular sheet, the edge that will be made into the rectangular sheet of micro-cavity layer adopts photoetching or cutting technique to make the groove that constitutes microcavity, the rectangular sheet of not making microcavity is called electrode layer, the rectangular sheet of making microcavity is called micro-cavity layer, and microcavity is arranged the linear array that forms a microcavity; Interval between the microcavity is called the microcavity barrier;
(3) adopt electrochemistry or film plating process to make dielectric layer, electrode layer is alignd with the location hole of micro-cavity layer, putting in order and requiring and successively assemble according to the micro-cavity layer of matching requirements and electrode layer at electrode layer or micro-cavity layer surface; The device of assembling N layer micro-cavity layer is just placed N layer microcavity sheet;
(4) the entire electrode array apparatus is sealed charge into discharge gas or steam at last, and electrode is drawn.
The present invention adopts assembling flaky material to realize two-dimensional micro-plasma array device, and this device has improved the device size flexibility and changeability, has reduced technology difficulty and cost of manufacture simultaneously, has improved array density, plant bulk and the reliability of device.
Description of drawings
Fig. 1 is the perspective view of configurable two-dimensional micro-plasma array device of the present invention.
Fig. 2 is the three-view diagram (front view, vertical view and end view) of configurable two-dimensional micro-plasma array device stereogram shown in Figure 1.
Fig. 3 is two electrode deriving structure schematic diagrames of configurable two-dimensional micro-plasma array device of the present invention.
Fig. 4 is three electrode deriving structure schematic diagrames of configurable two-dimensional micro-plasma array device of the present invention.
Fig. 5 is four electrode deriving structure schematic diagrames of configurable two-dimensional micro-plasma array device of the present invention.
Fig. 6 is the microcavity array cross arrangement apparatus structure schematic diagram that the present invention is made up of micro-cavity layer merely.
Fig. 7 is a sealing microcavity graphic structure schematic diagram of the present invention.
Embodiment
As depicted in figs. 1 and 2, assembling two-dimensional micro-plasma array device of the present invention is made up of electrode layer 100 and micro-cavity layer 200, and every layer thickness can be from 1 micron to several thousand microns.All comprise at least two location holes 300 on electrode layer 100 and the micro-cavity layer 200, electrode layer 100 is alternately laminated with micro-cavity layer 200, and every layer location hole 300 will align.The outermost of device is electrode layer 100 (0) and 100 (N), and null electrode layer 100 (0) is connected with first micro-cavity layer 200 (1), by the location hole alignment, and contact closely between the two, the centre does not interspace.First electrode layer 100 (1) is connected with first micro-cavity layer 200 (2), by the location hole alignment, and contact closely between the two, the centre does not interspace.And the like, k micro-cavity layer 200 (k) is connected with k electrode layer 100 (k), by the location hole alignment, and contact closely between the two, the centre does not interspace, up to N micro-cavity layer 200 (N) and N electrode layer 100 (N).
Have M microcavity 400 on each micro-cavity layer 200, the size of microcavity can be from 1 micron to several thousand microns, and whole device has N layer micro-cavity layer, constituted two-dimentional microcavity array jointly by electrode layer 100 and micro-cavity layer 200, and whole apparatus array number is N * M.Keep apart by barrier 410 between each microcavity on the micro-cavity layer.
Present embodiment is that two bus electrodes are set on the basis of embodiment 1.As shown in Figure 3, odd-level 100 (1), 100 (3) in the electrode layer ... be connected with first bus electrode 601, even level 100 (0), 100 (2) in the electrode layer ... be connected with second bus electrode 602, all comprise a micro-cavity layer between each even level in the electrode layer and each odd-level, apply alternating voltage or direct voltage between first bus electrode 601 and second bus electrode 602, make the array discharge.
Present embodiment is to increase the 3rd bus electrode is set on the basis of embodiment 2.As shown in Figure 4, all comprise a micro-cavity layer between each even level in the electrode layer and each odd-level, micro-cavity layer 200 (1), 200 (2) ... be connected with the 3rd bus electrode 603.Apply alternating voltage or direct voltage between first bus electrode 601 and second bus electrode 602, can be used as discharge and keep electrode, be responsible for keeping the state of discharge; The 3rd bus electrode 603 can be used as addressing electrode, and setting this row is need light or not need to light.
Present embodiment is provided with four bus electrodes, and is provided with two close-connected micro-cavity layer 200 between two electrode layers 100.As shown in Figure 5, this assembling two-dimensional micro-plasma array device also is made up of electrode layer 100 and micro-cavity layer 200, and electrode layer 100 and two micro-cavity layer 200 are alternately laminated, and the location hole of each layer is wanted all align.The outermost of device is electrode layer 100 (0) and 100 (N), and null electrode layer 100 (0) is connected with first micro-cavity layer 200 (1), by the location hole alignment, and contact closely between the two, the centre does not interspace.First micro-cavity layer 200 (1) is connected with second micro-cavity layer 200 (2), by the location hole alignment, and contact closely between the two, the centre does not interspace, microcavity 400 alignment or certain distances that stagger in the horizontal direction of two micro-cavity layer.Second micro-cavity layer 200 (2) is connected with first electrode layer 100 (1), by the location hole alignment, and contact closely between the two, the centre does not interspace.And the like, k electrode layer 100 (k) is connected with 2k+1 micro-cavity layer 200 (2k+1), by the location hole alignment, and contact closely between the two, the centre does not interspace; 2k+1 micro-cavity layer 200 (2k+1) is connected with 2k+2 micro-cavity layer 200 (2k+2), by the location hole alignment, and contact closely between the two, the centre does not interspace.Up to 2N micro-cavity layer 200 (2N) and N electrode layer 100 (N).Odd-level 100 (1), 100 (3) in the electrode layer ... be connected with first bus electrode 601, even level 100 (0), 100 (2) in the electrode layer ... be connected with second bus electrode 602, all comprise two micro-cavity layer between each even level in the electrode layer and each odd-level, odd number micro-cavity layer 200 (1), 200 (3) ... be connected with the 3rd bus electrode 603.Even number micro-cavity layer 200 (2), 200 (4) ... be connected with the 4th bus electrode 604.Apply alternating voltage or direct voltage between first bus electrode 601 and second bus electrode 602, can be used as discharge and keep electrode, be responsible for keeping the state of discharge; The 3rd bus electrode 603 and the 4th bus electrode 604 can be used as addressing electrode, and setting this row is need light or not need to light.
As shown in Figure 6, the assembling two-dimensional micro-plasma array device of present embodiment, form by two electrode layers 100 (0), 100 (1) and a plurality of micro-cavity layer 200, all comprise at least two location holes 300 on electrode layer 100 and the micro-cavity layer 200, electrode layer 100 (0) and 100 (1)) is positioned at outermost, the centre be multilayer micro-cavity layer 200 (1), 200 (2) ..., 200 (2N), every layer registration holes will be alignd.First micro-cavity layer 200 (1) is connected with second micro-cavity layer 200 (2), align by location hole, contact closely between the two, the centre does not interspace, the microcavity 400 of two micro-cavity layer will stagger spaced apart in the horizontal direction, the microcavity 400 of first micro-cavity layer 200 (1) is connected with the microcavity barrier 410 of second micro-cavity layer 200 (2), and the microcavity 400 of second micro-cavity layer 200 (2) is connected with the microcavity barrier 410 of first micro-cavity layer 200 (2).Odd number micro-cavity layer 200 (1), 200 (3) ... be connected with the 3rd bus electrode 603.Even number micro-cavity layer 200 (2), 200 (4) ... be connected with the 4th bus electrode 604.Apply alternating voltage between the 3rd bus electrode 603 and the 4th bus electrode (604), can be used as discharge and keep electrode, be responsible for keeping the state of discharge.
As shown in Figure 7, present embodiment is the structure at micro-cavity layer 100, and the microcavity 400 in the micro-cavity layer 100 is surrounded by barrier 410, forms an enclosed areas, and microcavity 400 does not have opening at apparatus surface, and discharge space is closed in the microcavity 400.The shape of microcavity 400 can be any enclosed figure.
The preparation method of the assembling two-dimensional micro-plasma array device that the various embodiments described above provide is as described below:
At first will conduct electricity flaky material and cut into the identical rectangular sheet of size and shape by laser, machinery and other cutting method; Adopt laser, ultrasonic, mechanical and at least two location holes of other boring method making then in the identical position of each rectangular sheet; Then the edge with the segment rectangle sheet adopts photoetching, line cutting and other technology to make the groove that constitutes microcavity, the rectangular sheet of not making microcavity is called electrode layer, the rectangular sheet of making microcavity is called micro-cavity layer, several microcavitys are arranged on each micro-cavity layer, form the linear array of a microcavity, the microcavity quantity on each micro-cavity layer is M.Adopt electrochemistry, plated film or other method to make dielectric layer at electrode layer or micro-cavity layer surface.Electrode layer is alignd with all location holes of micro-cavity layer, according to the successively stacked assembling of putting in order of described each layer of each embodiment.At last the entire electrode array apparatus is sealed and charge into discharge gas or steam, and by each embodiment is described electrode is drawn, the microcavity number with array apparatus of N layer micro-cavity layer is N * M.Assembling two-dimensional micro-plasma array device microcavity can be filled with the gaseous state discharge medium, and described medium can comprise a kind of, two kinds or more of gases.If the electrode layer upper dielectric layer exists, then device applies alternating voltage, if dielectric layer does not exist, then applies interchange or direct voltage.
Claims (9)
1. configurable two-dimensional micro-plasma array device, form by at least two electrode layers and at least one micro-cavity layer stacked arrangement, it is characterized in that: contact closely between each layer, two outermost are electrode layer, be equipped with at least two location holes on all electrode layers and the micro-cavity layer, all electrode layers and micro-cavity layer are all alignd by location hole; Micro-cavity layer is the sheet of conductive material of surface coverage dielectric layer, or the insulating trip of insulating material composition; The edge of micro-cavity layer is provided with the linear array microcavity of depression, is kept apart by barrier between each microcavity; Electrode layer is a sheet of conductive material; By drawing two electrodes, three electrodes or four electrodes in micro-cavity layer and the electrode layer respectively.
2. configurable two-dimensional micro-plasma array device according to claim 1 is characterized in that: the stacked arrangement of described electrode layer and micro-cavity layer is that electrode layer and micro-cavity layer alternate intervals are stacked in proper order.
3. configurable two-dimensional micro-plasma array device according to claim 1 is characterized in that: the stacked arrangement of described electrode layer and micro-cavity layer is that to have only two outermost be electrode layer in proper order, is micro-cavity layer between two electrode layers.
4. configurable two-dimensional micro-plasma array device according to claim 1 is characterized in that: the stacked arrangement of described electrode layer and micro-cavity layer is to be provided with two micro-cavity layer between per two electrode layers in proper order.
5. configurable two-dimensional micro-plasma array device according to claim 1 is characterized in that: the microcavity in the described micro-cavity layer is surrounded by barrier, forms an enclosed areas.
6. configurable two-dimensional micro-plasma array device according to claim 1, it is characterized in that: the mode of extraction electrode is in described micro-cavity layer and the electrode layer: draw first bus electrode by the odd-level in the electrode layer, draw second bus electrode by the even level in the electrode layer, by drawing the 3rd bus electrode in each micro-cavity layer.
7. configurable two-dimensional micro-plasma array device according to claim 1, it is characterized in that: the mode of extraction electrode is in described micro-cavity layer and the electrode layer: draw first bus electrode by the odd-level in the electrode layer, draw and second bus electrode by the even level in the electrode layer, draw the 3rd bus electrode by the odd number micro-cavity layer, draw the 4th bus electrode by the even number micro-cavity layer, apply alternating voltage or direct voltage between first bus electrode and second bus electrode, keep electrode as discharge, be responsible for keeping the state of discharge; The 3rd bus electrode and the 4th bus electrode are as addressing electrode, and setting this row is need light or not need to light.
8. configurable two-dimensional micro-plasma array device according to claim 1, it is characterized in that: the mode of extraction electrode is in described micro-cavity layer and the electrode layer: draw the 3rd bus electrode by the odd number micro-cavity layer, draw the 4th bus electrode by the even number micro-cavity layer, apply alternating voltage between the 3rd bus electrode and the 4th bus electrode, keep electrode as discharge, be responsible for keeping the state of discharge.
9. the preparation method of the described configurable two-dimensional micro-plasma array device of claim 1 is characterized in that: may further comprise the steps:
(1) can make the conduction flaky material of micro-cavity layer and electrode layer by cutting method and be merely able to make micro-cavity layer insulation flaky material and cut into the identical rectangular sheet of size and shape;
(2) make at least two location holes in the identical position of each rectangular sheet, the edge that will be made into the rectangular sheet of micro-cavity layer adopts photoetching or cutting technique to make the groove that constitutes microcavity, the rectangular sheet of not making microcavity is called electrode layer, the rectangular sheet of making microcavity is called micro-cavity layer, and microcavity is arranged the linear array that forms a microcavity;
(3) adopt electrochemistry or film plating process to make dielectric layer, electrode layer is alignd with the location hole of micro-cavity layer, putting in order and requiring and successively assemble according to the micro-cavity layer of matching requirements and electrode layer at electrode layer or micro-cavity layer surface;
(4) the entire electrode array apparatus is sealed charge into discharge gas or steam at last, and electrode is drawn.
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| CN102556955A (en) * | 2012-02-23 | 2012-07-11 | 山东大学 | Two-dimensional direct printing type maskless plasma etching array device |
| CN113543442B (en) * | 2021-06-23 | 2023-05-23 | 中国人民解放军空军工程大学 | Multi-layer array type micropore discharge plasma generating device and generating method |
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| US6563257B2 (en) * | 2000-12-29 | 2003-05-13 | The Board Of Trustees Of The University Of Illinois | Multilayer ceramic microdischarge device |
| US7511426B2 (en) * | 2004-04-22 | 2009-03-31 | The Board Of Trustees Of The University Of Illinois | Microplasma devices excited by interdigitated electrodes |
| US7297041B2 (en) * | 2004-10-04 | 2007-11-20 | The Board Of Trustees Of The University Of Illinois | Method of manufacturing microdischarge devices with encapsulated electrodes |
| US7477017B2 (en) * | 2005-01-25 | 2009-01-13 | The Board Of Trustees Of The University Of Illinois | AC-excited microcavity discharge device and method |
| US7642720B2 (en) * | 2006-01-23 | 2010-01-05 | The Board Of Trustees Of The University Of Illinois | Addressable microplasma devices and arrays with buried electrodes in ceramic |
| JP5539650B2 (en) * | 2006-01-23 | 2014-07-02 | ザ ボード オブ トラスティーズ オブ ザ ユニバーシティ オブ イリノイ | Microplasma device |
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