CN103441220A - White light quantum dot light emitting diode and preparation method thereof - Google Patents
White light quantum dot light emitting diode and preparation method thereof Download PDFInfo
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- CN103441220A CN103441220A CN2013104196632A CN201310419663A CN103441220A CN 103441220 A CN103441220 A CN 103441220A CN 2013104196632 A CN2013104196632 A CN 2013104196632A CN 201310419663 A CN201310419663 A CN 201310419663A CN 103441220 A CN103441220 A CN 103441220A
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Abstract
The invention provides a white light quantum dot light emitting diode and a preparation method thereof. A white light quantum dot light emitting diode device comprises a cathode and a hole transport layer which are formed on a substrate, a quantum dot luminescent layer, an inorganic nano-particle luminescent layer and an anode electrode, wherein the thickness of the hole transport layer is 10-50nm, the thickness of the quantum dot luminescent layer is 5-30nm, and the thickness of the inorganic nano-particle luminescent layer is 5-40nm. The preparation method comprises the following steps: firstly preparing the hole transport layer on a transparent conductive glass substrate, sintering in nitrogen environment, then preparing the quantum dot luminescent layer on the hole transport layer, sintering both the quantum dot luminescent layer and the hole transport layer in the nitrogen environment, then preparing the inorganic nano-particle luminescent layer on the quantum dot luminescent layer, sintering in oxygen for 0-40 minutes, and finally preparing the anode electrode. According to the diode, the injection rate of electrons and holes can be improved, the luminous efficiency of the device can be enhanced, and energy is converted in the device.
Description
Technical field
The invention belongs to the light emitting diode with quantum dots devices field, be specifically related to a kind of white light quanta point light-emitting diode and preparation method thereof.
background technology
Light emitting diode with quantum dots (QD-LED) is to use quanta point material to be applied to a kind of New Type Display Devices in organic or polymer electroluminescent device as luminescent layer.Because the emission spectrum half-peak breadth of quantum dot is narrow, and, along with the change of quantum dot size size, spectral region also can be subjected to displacement, thus the QD-LED device not only luminous efficiency is high, and light emitting region can cover whole limit of visible spectrum.Thereby in recent years, the research of QD-LED device was subject to the extensive concern of domestic and international research group.
It is fewer that the white light quanta point LED device is reported, primary structure is a kind of is to adopt the three primary colors quantum dot light emitting, selecting the red, green, blue quantum dot is white as the three primary colors mixed luminescence, the size that wherein blue quantum dot need to be controlled quantum dot is in 1 nm left and right, thereby the preparation of quantum dot is brought to larger difficulty; The second adopts blue colour fluorescent powder as substrate, in conjunction with yellow quantum dot light emitting, with blue colour fluorescent powder, excites acting in conjunction to produce white light.The present invention uses same light emitting diode with quantum dots device, adopts two kinds of luminescent layers, sends blueness and sodium yellow, in conjunction with the mechanism that produces white light.
Summary of the invention
The objective of the invention is to design a kind of white light quanta point light-emitting diode of double emitting layers.
Another object of the present invention is to provide a kind of preparation method of white light quanta point light-emitting diode of double emitting layers.
To achieve these goals, the technical solution used in the present invention is:
The white light quanta point LED device, comprise the negative electrode formed in substrate, hole transmission layer, quantum dot light emitting layer, inorganic nanoparticles luminescent layer and anode electrode, hole transport bed thickness 10-50 nm, quantum dot light emitting bed thickness 5-30 nm, the luminous bed thickness 5-40 of inorganic particle nm, described light emitting diode with quantum dots device glow color is adjustable with voltage, under certain voltage drives, inorganic nanoparticles electroluminescence in light emitting diode with quantum dots produces blue, replace the blue light that the chip of blue colour fluorescent powder in general white light parts sends, the gold-tinted produced by electroluminescence with luminous utmost point quantum dot layer in device forms complementary colours, form white-light emitting.
The yellow light mix that the blue light that utilizes inorganic nanoparticles to send and quantum dot light photoluminescence produce, form white-light emitting, and its glow color has adjustability under different voltage, and the inorganic nanoparticles in described inorganic nanoparticles luminescent layer comprises ZnO, TiO
2, SnO
2and two kinds of composite nanostructures that nano particle forms.
The preparation method of described white light quanta point LED device, comprise the steps: 1) prepare hole transmission layer on transparent conducting glass substrate, and under nitrogen environment sintering 0-40 minute, sintering temperature 100-200 degree;
2) quantum dot layer is prepared on hole transmission layer, quantum dot light emitting layer and hole transmission layer be sintering 0-40 minute under nitrogen environment jointly, sintering temperature 60-200 degree;
3) the inorganic nanoparticles luminescent layer is prepared on quantum dot light emitting layer to sintering 0-40 minute in oxygen then, sintering temperature 60-200 ℃;
4) finally prepare anode electrode, electrode material is one or more in aluminium, silver, gold.
Described quantum dot is nucleocapsid structure, and core is one or several in cadmium sulfide, cadmium selenide, cadmium telluride, vulcanized lead, lead selenide, and shell is a kind of in zinc sulphide, zinc selenide.
Described inorganic nanoparticles layer is luminescent layer, is again electron transfer layer.
The glow color of device is along with voltage has adjustability, quanta point electroluminescent before this, emission wavelength scope 560-600 nm; Then that quantum dot and inorganic nanoparticles are simultaneously luminous, the complementary white that forms, emission wavelength scope 400-650 nm, be finally that independent inorganic nanoparticles is luminous, glow color scope 400-480 nm.
?
beneficial effect:
This kind of white light quanta point light-emitting diode can improve the injection rate in electronics and hole, increases the luminous efficiency of device.Carry out Conversion of Energy at device inside, adopt double-deck luminescent layer to send the light of two kinds of colors, glow color is adjustable with voltage simultaneously, the colour temperature of white light changes along with the quantum dot wavelengthtunable, simultaneously, inorganic layer blocks air and aqueous vapor, has improved the performances such as application life of device.Cut-in voltage is 2 V, and glow color is yellow; When voltage, during higher than 5 V, glow color becomes white by yellow, and luminosity is greater than 400 cd/m
2, the device working life is greater than 200 hours.
The accompanying drawing explanation
Fig. 1 is white light quanta point light emitting diode construction schematic diagram, wherein: 1---negative electrode, 2---hole transmission layer, 3-quantum dot light emitting layer, 4---the inorganic nanoparticles luminescent layer, 5---anode;
embodiment:
Embodiment 1:
The white light quanta point LED device, as shown in Figure 1, comprise the negative electrode 1 formed in substrate, hole transmission layer 2, quantum dot light emitting layer 3, inorganic nanoparticles luminescent layer 4 and anode electrode 5, negative electrode is placed in bottom, respectively hole transmission layer from the bottom to top, quantum dot light emitting layer, inorganic nanoparticles luminescent layer and anode, hole transport bed thickness 20nm wherein, quantum dot light emitting bed thickness 30nm, the luminous bed thickness 40nm of inorganic particle, described light emitting diode with quantum dots device glow color is adjustable with voltage, under 10 V voltages drive, inorganic nanoparticles electroluminescence in light emitting diode with quantum dots produces blue, replace the blue light that the chip of blue colour fluorescent powder in general white light parts sends, the gold-tinted produced by electroluminescence with luminous utmost point quantum dot layer in device forms complementary colours, form white-light emitting.
The preparation method of above-mentioned white light quanta point LED device, comprise the steps:
(1) prepare hole transmission layer TFB on transparent conducting glass substrate, and under nitrogen environment sintering 20 minutes, sintering temperature 150 degree.
(2) quantum dot layer is prepared on hole transmission layer, quantum dot is nucleocapsid structure, and core is cadmium selenide, and shell is zinc sulphide.After quantum dot layer preparation under nitrogen environment sintering 20 minutes, sintering temperature 200 degree.
(3) by ZnO/TiO
2the composite nanometer particle layer is prepared on quantum dot layer, by inorganic nanoparticles luminescent layer sintering 20 minutes in oxygen, 200 ℃ of sintering temperatures.
(4) finally prepare anode electrode, electrode material is aluminium.
Cut-in voltage is 2 V, and glow color is yellow; When voltage 10 V, glow color becomes white by yellow, and luminosity is greater than 400 cd/m
2, the device working life is greater than 200 hours.
The white light quanta point LED device, comprise the negative electrode formed in substrate, hole transmission layer, quantum dot light emitting layer, inorganic nanoparticles luminescent layer and anode electrode, hole transport bed thickness 50nm wherein, quantum dot light emitting bed thickness 20nm, the luminous bed thickness 30nm of inorganic particle, described light emitting diode with quantum dots device glow color is adjustable with voltage, under 11 V voltages drive, inorganic nanoparticles electroluminescence in light emitting diode with quantum dots produces blue, replace the blue light that the chip of blue colour fluorescent powder in general white light parts sends, the gold-tinted produced by electroluminescence with luminous utmost point quantum dot layer in device forms complementary colours, form white-light emitting.
The preparation method of above-mentioned white light quanta point LED device, comprise the steps:
(1) prepare hole transmission layer TFB on transparent conducting glass substrate, sintering time 15 clocks, sintering temperature 200 degree.
(2) quantum dot layer is prepared on hole transmission layer, quantum dot is nucleocapsid structure, and core is cadmium sulfide, and shell is zinc sulphide.
(3) by ZnO/SnO
2the composite nanometer particle layer is prepared on quantum dot layer
(4) finally prepare anode electrode, electrode material is silver.
Cut-in voltage is 2 V, and glow color is yellow; When voltage 11V, glow color becomes white by yellow, and luminosity is greater than 400 cd/m
2, the device working life is greater than 200 hours.
The white light quanta point LED device, comprise the negative electrode formed in substrate, hole transmission layer, quantum dot light emitting layer, inorganic nanoparticles luminescent layer and anode electrode, hole transport bed thickness 10 nm wherein, quantum dot light emitting bed thickness 30 nm, the luminous bed thickness 40nm of inorganic particle, described light emitting diode with quantum dots device glow color is adjustable with voltage, under 9 V voltages drive, inorganic nanoparticles electroluminescence in light emitting diode with quantum dots produces blue, replace the blue light that the chip of blue colour fluorescent powder in general white light parts sends, the gold-tinted produced by electroluminescence with luminous utmost point quantum dot layer in device forms complementary colours, form white-light emitting.
The preparation method of above-mentioned white light quanta point LED device, comprise the steps:
(1) prepare hole transmission layer TFB on transparent conducting glass substrate, and under nitrogen environment sintering 40 minutes, sintering temperature 100 degree.
(2) quantum dot layer is prepared on hole transmission layer, quantum dot is nucleocapsid structure, and core is cadmium telluride, and shell is zinc sulphide.After quantum dot layer preparation under nitrogen environment sintering 40 minutes, sintering temperature 60 degree.
(3) by TiO
2/ SnO
2the composite nanometer particle layer is prepared on quantum dot layer, by inorganic nanoparticles luminescent layer sintering 40 minutes in oxygen, and sintering temperature 60 degree.
(4) finally prepare anode electrode, electrode material is aluminium.
Cut-in voltage is 2 V, and glow color is yellow; When voltage 9 V, glow color becomes white by yellow, and luminosity is greater than 400 cd/m
2, the device working life is greater than 200 hours.
Claims (5)
1. white light quanta point LED device, comprise the negative electrode (1), the hole transmission layer (2) that form in substrate, quantum dot light emitting layer (3), inorganic nanoparticles luminescent layer (4) and anode (5), it is characterized in that: the thick 10-50 nm of hole transmission layer (2), the thick 5-30 nm of quantum dot light emitting layer (3), the thick 5-40 nm of inorganic particle luminescent layer (4).
2. white light quanta point LED device as claimed in claim 1, it is characterized in that: the inorganic nanoparticles in described inorganic nanoparticles luminescent layer comprises ZnO, TiO
2, SnO
2and two kinds of composite nanostructures that nano particle forms.
3. the preparation method of white light quanta point LED device claimed in claim 1, is characterized in that comprising the steps:
1) prepare hole transmission layer on transparent conducting glass substrate, and under nitrogen environment sintering 0-40 minute, sintering temperature 100-200 degree;
2) quantum dot layer is prepared on hole transmission layer, quantum dot light emitting layer and hole transmission layer be sintering 0-40 minute under nitrogen environment jointly, sintering temperature 60-200 degree;
3) the inorganic nanoparticles luminescent layer is prepared on quantum dot light emitting layer to sintering 0-40 minute in oxygen then, sintering temperature 60-200 ℃;
4) finally prepare anode electrode, electrode material is one or more in aluminium, silver, gold.
4. the preparation method of white light quanta point LED device claimed in claim 3, it is characterized in that: in described quantum dot light emitting layer, quantum dot is nucleocapsid structure, core is one or several in cadmium sulfide, cadmium selenide, cadmium telluride, vulcanized lead, lead selenide, and shell is a kind of in zinc sulphide, zinc selenide.
5. the preparation method of white light quanta point LED device claimed in claim 3, it is characterized in that: the inorganic nanoparticles in described inorganic nanoparticles luminescent layer comprises ZnO, TiO
2, SnO
2and two kinds of composite nanostructures that nano particle forms.
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Cited By (8)
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|---|---|---|---|---|
| CN103840053A (en) * | 2014-03-14 | 2014-06-04 | 东南大学 | Surface-plasma-enhanced quantum dot light-emitting diode device and manufacturing method thereof |
| CN103840048A (en) * | 2014-03-14 | 2014-06-04 | 东南大学 | Inverted type full inorganic nanometer oxide quantum dot light-emitting diode and manufacturing method thereof |
| CN105070796A (en) * | 2015-07-24 | 2015-11-18 | 东南大学 | Method using water-soluble cadmium telluride quantum dot as light-emitting layer to build water-soluble quantum dot LED |
| CN105900529A (en) * | 2014-01-09 | 2016-08-24 | 株式会社村田制作所 | Light emitting device and method for manufacturing light emitting device |
| CN110176548A (en) * | 2019-05-21 | 2019-08-27 | 东南大学 | A kind of dual emission formula white light quanta point light emitting diode and preparation method thereof |
| CN111584584A (en) * | 2020-05-15 | 2020-08-25 | Tcl华星光电技术有限公司 | Display panel and display device |
| CN113497192A (en) * | 2020-04-08 | 2021-10-12 | 陈学仕 | White light quantum dot diode element, backlight module and lighting device |
| CN115368540A (en) * | 2021-09-30 | 2022-11-22 | 广东聚华印刷显示技术有限公司 | Polymer, light-emitting diode and preparation method thereof |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105900529A (en) * | 2014-01-09 | 2016-08-24 | 株式会社村田制作所 | Light emitting device and method for manufacturing light emitting device |
| CN105900529B (en) * | 2014-01-09 | 2018-07-06 | 株式会社村田制作所 | The manufacturing method of luminescent device and luminescent device |
| CN103840053B (en) * | 2014-03-14 | 2016-08-17 | 东南大学 | Light emitting diode with quantum dots device that surface plasma strengthens and preparation method thereof |
| CN103840053A (en) * | 2014-03-14 | 2014-06-04 | 东南大学 | Surface-plasma-enhanced quantum dot light-emitting diode device and manufacturing method thereof |
| CN103840048A (en) * | 2014-03-14 | 2014-06-04 | 东南大学 | Inverted type full inorganic nanometer oxide quantum dot light-emitting diode and manufacturing method thereof |
| CN105070796A (en) * | 2015-07-24 | 2015-11-18 | 东南大学 | Method using water-soluble cadmium telluride quantum dot as light-emitting layer to build water-soluble quantum dot LED |
| CN105070796B (en) * | 2015-07-24 | 2017-12-19 | 东南大学 | The method that water-soluble quantum dot LED is built using water soluble cadmium telluride quantum point as luminescent layer |
| CN110176548A (en) * | 2019-05-21 | 2019-08-27 | 东南大学 | A kind of dual emission formula white light quanta point light emitting diode and preparation method thereof |
| CN113497192A (en) * | 2020-04-08 | 2021-10-12 | 陈学仕 | White light quantum dot diode element, backlight module and lighting device |
| CN111584584A (en) * | 2020-05-15 | 2020-08-25 | Tcl华星光电技术有限公司 | Display panel and display device |
| CN111584584B (en) * | 2020-05-15 | 2023-12-05 | Tcl华星光电技术有限公司 | Display panel and display device |
| CN115368540A (en) * | 2021-09-30 | 2022-11-22 | 广东聚华印刷显示技术有限公司 | Polymer, light-emitting diode and preparation method thereof |
| CN115368540B (en) * | 2021-09-30 | 2024-02-09 | 广东聚华印刷显示技术有限公司 | Polymer, light-emitting diode and preparation method thereof |
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Application publication date: 20131211 |