CN203596354U - Organic electroluminescence diode parallel connected structure mode composite lighting device - Google Patents

Organic electroluminescence diode parallel connected structure mode composite lighting device Download PDF

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CN203596354U
CN203596354U CN201320674901.XU CN201320674901U CN203596354U CN 203596354 U CN203596354 U CN 203596354U CN 201320674901 U CN201320674901 U CN 201320674901U CN 203596354 U CN203596354 U CN 203596354U
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light emitting
emitting diode
negative electrode
anode
organic electroluminescent
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吴晓亮
孙文兵
汤梅
孙亮亮
周鹏超
朱文清
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University of Shanghai for Science and Technology
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University of Shanghai for Science and Technology
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Abstract

The utility model discloses an organic electroluminescence diode parallel connected structure mode composite lighting device; each lighting unit is formed by combining and stacking more than two organic electroluminescence diode units in parallel connection, and comprises a top emission structure type and a bottom emission structure type sharing a same substrate; the parallel connected structure is arranged on a same side of the substrate; a transparent anode of the bottom emission structure type lighting diode unit of the lighting unit is formed on the substrate; any two adjacent organic electroluminescence diode units share a same transparent or half-transparent electrode function layer, so the lighting unit can finally realize a stacked lighting device in parallel connection, and organic electroluminescence diode units with different colors in the lighting unit are driven to realize stacking layer composite lighting. The independent property of the parallel connected device is realized, mutual influences in electrology are prevented, thereby providing convenience for adjusting lighting layers of different colors in a white light device under a condition of reducing starting voltage.

Description

The recombination luminescence device of organic electroluminescent LED parallel-connection structure type
Technical field
The utility model relates to a kind of light emitting semiconductor device, particularly relates to a kind of OLED device, belongs to organic electroluminescent luminescent device technical field, is applied to and shows and lighting field aspect.
Background technology
OLED device has active illuminating, and shock resistance is good, and visual angle is wide, and operating temperature is wide, and contrast is high, can flexibility demonstration etc. feature, be to show and the most rising light-emitting display device of lighting field.
In recent years to having had certain progress with luminous efficiency, brightness, the research in life-span of OLED device, its main method is all from conversion materials more, regulates the aspects such as carrier transport mechanism to obtain the improvement to device performance.To there is no too large variation with device mechanism, in patent or bibliographical information except the transmitting of general common top and end ballistic device, some device of connecting, (the United States Patent (USP) the 6th such as Jones, 337, No. 492), (the United States Patent (USP) the 6th such as Tanaka, 107, No. 734), (the United States Patent (USP)s the 6th such as Kido etc. (Japan Patent 20031045676A communique and United States Patent (USP) 200310189401A1 communique) and Liao, 717, No. 358 and United States Patent (USP) 200310170491A1 communique) oneself discloses tandem OLED structure (being sometimes referred to as stack OLED (stacked OLED) or tandem type OLED (cascaded OLED)).Tandem OLED also drives this stacked body to manufacture with a power supply by the some single OLED unit of vertical stacking.Its advantage is to improve luminous efficiency and or useful life.But cascaded structure need to improve driving voltage, it is directly proportional substantially to the OLED unit number being stacked.
Matsumoto and Kido etc. (in SID 03 Digest 979 (2003), report and constructed by be connected blue-green EL unit and orange EL unit in device the White OLED of connecting, and by realizing white light emission with a power drives device.Although luminous efficiency is improved, this series connection White OLED device has weak green and red component in spectrum.Liao etc. have described by red EL unit, green EL unit being connected to the series connection White OLED structure obtaining in device with blue EL units in series in United States Patent (USP) 200310170491A1 communique.When series connection White OLED is during by a power drives, produce white light emission by the spectral combination of red, green and blue EL unit.But series connection element manufacturing difficulty, and also there is above-mentioned shortcoming.
Utility model content
In order to solve prior art problem, the purpose of this utility model is to overcome the defect that prior art exists, the improvement of making compared with the high easy interactional problem of each luminescent layer compared with difficult improved problem and while manufacturing white light OLED for the cut-in voltage of current OLED device, provides a kind of recombination luminescence device of organic electroluminescent LED parallel-connection structure type.Deviate from mutually for the requirement that reduces cut-in voltage by obtaining tandem type device in above-mentioned background technology, therefore we have considered parallel connection type combination, bring into play the independence of its device in parallel, avoid influencing each other in electricity, in the situation that can reducing cut-in voltage, for the luminescent layer that regulates different colours in white light parts is provided convenience.
Create object for reaching above-mentioned utility model, the utility model adopts following technical proposals:
A kind of recombination luminescence device of organic electroluminescent LED parallel-connection structure type, each luminescence unit forms by plural organic electroluminescent LED unit stacked combination in parallel, wherein both comprised emission structure at top type light emitting diode, also comprise end emitter junction configuration light emitting diode, each organic electroluminescent LED unit in same luminescence unit carries out the stacking connection setting of compartment successively with emission structure at top type and end emitter junction configuration, at the same substrate of each organic electroluminescent LED units shared of same luminescence unit, and carry out the setting of parallel connection type structure in the same side of substrate, , at all organic electroluminescent LED unit of same luminescence unit common anode and negative electrode respectively, on substrate, form common anode node and common negative electrode node, wherein with substrate next-door neighbour be end emitter junction configuration light emitting diode, the stacking emission structure at top type light emitting diode that arranges on end emitter junction configuration light emitting diode again, on substrate, form the transparent anode of emitter junction configuration light emitting diode at the bottom of of luminescence unit, transparent anode adopts transparent conductive material to make ,in same luminescence unit, between two organic electroluminescent LED unit of arbitrary neighborhood, share the electrode function layer that same employing transparent conductive material or semi-transparent conductive material are made, the electrode that is luminescence unit the superiors of stacking setting on substrate forms total reflection electrode, make luminescence unit finally realize the lamination luminescent device that parallel way connects, realize lamination recombination luminescence by the organic electroluminescent LED unit that drives different colours in luminescence unit.
As a kind of optimal technical scheme of the present utility model, each luminescence unit is by two organic electroluminescent LED unit stacking formation in parallel, luminescence unit is two-layer compound luminescent device unit, on substrate, be followed successively by the first end emitter junction configuration light emitting diode and the first emission structure at top type light emitting diode from bottom to top, on substrate, form the transparent anode of the first end emitter junction configuration light emitting diode, first negative electrode of end emitter junction configuration light emitting diode and the negative electrode of the first emission structure at top type light emitting diode are integrally formed the first negative electrode, the first negative electrode adopts transparent conductive material or semi-transparent conductive material to make, the anodic formation first anode of the first emission structure at top type light emitting diode, the first anode is the total reflection anode that adopts opaque electric conducting material to make, the electrode that is luminescence unit the superiors of stacking setting on substrate forms total reflection electrode, the first anode and transparent anode form common anode node on substrate, the first negative electrode is electrically connected with the common negative electrode node on substrate, between transparent anode and the first negative electrode, form the each functional layer structure in inside of the first end emitter junction configuration light emitting diode, between the first negative electrode and the first anode, form the each functional layer structure in inside of the first emission structure at top type light emitting diode, each luminescence unit is all by driving two organic electroluminescent LED unit to realize lamination recombination luminescence.
As another kind of optimal technical scheme of the present utility model, each luminescence unit forms by 4 organic electroluminescent LED unit stacked combination in parallel, luminescence unit is 4 layers of recombination luminescence device cell, on substrate, be followed successively by the first end emitter junction configuration light emitting diode from bottom to top, the first emission structure at top type light emitting diode, the second end emitter junction configuration light emitting diode and the second emission structure at top type light emitting diode, on substrate, form the transparent anode of the first end emitter junction configuration light emitting diode, first negative electrode of end emitter junction configuration light emitting diode and the negative electrode of the first emission structure at top type light emitting diode are integrally formed the first negative electrode, second negative electrode of end emitter junction configuration light emitting diode and the negative electrode of the second emission structure at top type light emitting diode are integrally formed the second negative electrode, the anode of the anode of the first emission structure at top type light emitting diode and the second end emitter junction configuration light emitting diode is integrally formed the first anode, the anodic formation second plate of the second emission structure at top type light emitting diode, the first negative electrode, the second negative electrode and the first anode all adopt transparent conductive material or semi-transparent conductive material to make, second plate is the total reflection anode that adopts opaque electric conducting material to make, the electrode that is luminescence unit the superiors of stacking setting on substrate forms total reflection electrode, the first anode, second plate and transparent anode form common anode node on substrate, the first negative electrode, the second negative electrode is electrically connected with the common negative electrode node on substrate, between transparent anode and the first negative electrode, form the each functional layer structure in inside of the first end emitter junction configuration light emitting diode, between the first negative electrode and the first anode, form the each functional layer structure in inside of the first emission structure at top type light emitting diode, between the first anode and the second negative electrode, form the each functional layer structure in inside of the second end emitter junction configuration light emitting diode, between the second negative electrode and second plate, form the each functional layer structure in inside of the second emission structure at top type light emitting diode, each luminescence unit is all by driving 4 organic electroluminescent LED unit to realize lamination recombination luminescence.
The material of above-mentioned the first negative electrode, above-mentioned the second negative electrode and the above-mentioned first anode preferably adopts respectively Ag, Al/Ag or Al/Ag/Al, and the thickness of the first negative electrode 12 second negative electrodes 16 and the first anode 11 is preferably respectively 10-50nm.
The material of above-mentioned transparent anode is preferably ITO, FTO, AZO, SWCNT or MWCN, and the thickness of transparent anode 13 is all preferably 80-180nm.
The electrode of above-mentioned luminescence unit the superiors of stacking setting on substrate 14 is for forming total reflection electrode, and the material of total reflection electrode is individual layer Ag, and the thickness of total reflection electrode is preferably 80-180nm; Or total reflection electrode preferably adopts the laminated construction of Ag/Alq/Ag/Alq/Ag to form laminated material electrode, and the thickness of laminated material electrode is preferably 100-500nm.
The material of aforesaid substrate 14 is preferably simple glass, quartz glass or PET.
The preferably doping content of each functional layer material of the each organic electroluminescent LED unit by the above-mentioned luminescence unit of controlling composition and control light emitting layer thickness and regulate the recombination luminescence of luminescence unit.
The utility model compared with prior art, has following substantive distinguishing features and advantage:
1. the utility model is at least that two devices of ballistic device are formed in parallel at the bottom of a top ballistic device and one, can carry out insusceptibly for each separate unit wherein that routine regulates and experiment, the final white light of selecting the state of its combined effect the best to mate assembling device transmitting, its regulative mode can be for controlling the doping content of material, control light emitting layer thickness, control microcavity effect etc., the utility model is brought into play the independence of its device in parallel, avoid influencing each other in electricity, the utility model organic LED structure device is electricity device in parallel, take full advantage of shunting in parallel but not the feature of dividing potential drop reduce the cut-in voltage of device, in the situation that can reducing cut-in voltage, for the luminescent layer that regulates different colours in white light parts is provided convenience,
2. the utility model is realized effective raising of optical and electrical property by rational parallel-connection structure, and wherein independently luminescence unit can be increased to any number ofly according to the actual requirements, forms combined device according to independent luminescence unit, realizes recombination luminescence;
3. compared to existing technology, the utility model is that the design of OLED white light parts brings new thinking, can guarantee in the non-interfering situation of two-layer even multilayer luminescent layer, by the combination of two or more luminescence units and the transmitting of having mated white light.And depress enhancing luminosity in same electrical, reduce the cut-in voltage of device;
4. the utility model recombination luminescence device is optics series connection device, and the single device height of brightness ratio when the bright device of same electrical pressure point is also high than series connection device in theory, and ideally same electrical is depressed brightness and should approach the twice of single device;
5. top of the present utility model ballistic device and end ballistic device can be distinguished independent regulation or change inner difference in functionality layer structure and luminescent layer material, change its emission wavelength;
Thereby the utility model can by device two independently luminescence unit come to regulate independently respectively emission spectrum to reach the object of compound white light.
Accompanying drawing explanation
Fig. 1 is the composite construction schematic cross-section of the recombination luminescence device of the utility model embodiment mono-organic electroluminescent LED parallel-connection structure type.
Fig. 2 is the structural representation of the recombination luminescence device of the utility model embodiment mono-organic electroluminescent LED parallel-connection structure type.
Fig. 3 is the structural section figure of the recombination luminescence device of the utility model embodiment mono-organic electroluminescent LED parallel-connection structure type.
Fig. 4 is the ITO electrode pattern schematic diagram of the transparent anode of the utility model embodiment mono-.
Fig. 5 is the recombination luminescence device fabrication processes of the utility model embodiment mono-organic electroluminescent LED parallel-connection structure type organic layer deposition lamina membranacea shape schematic diagram used.
Fig. 6 is the electrode deposition mask plate shape schematic diagram of the utility model embodiment mono-.
Fig. 7 is the composite construction schematic cross-section of the recombination luminescence device of the utility model embodiment bis-organic electroluminescent LED parallel-connection structure types.
Embodiment
Details are as follows for preferred embodiment of the present utility model:
embodiment mono-:
In the present embodiment, referring to Fig. 1~Fig. 6, a kind of recombination luminescence device of organic electroluminescent LED parallel-connection structure type, each luminescence unit forms by plural organic electroluminescent LED unit stacked combination in parallel, wherein both comprised emission structure at top type light emitting diode, also comprise end emitter junction configuration light emitting diode, each organic electroluminescent LED unit in same luminescence unit carries out the stacking connection setting of compartment successively with emission structure at top type and end emitter junction configuration, at the same substrate 14 of each organic electroluminescent LED units shared of same luminescence unit, and carry out the setting of parallel connection type structure in the same side of substrate 14, , at all organic electroluminescent LED unit of same luminescence unit common anode and negative electrode respectively, on substrate 14, form common anode node and common negative electrode node, wherein with substrate 14 be close to for end emitter junction configuration light emitting diode, the stacking emission structure at top type light emitting diode that arranges on end emitter junction configuration light emitting diode again, on substrate 14, form the transparent anode 13 of emitter junction configuration light emitting diode at the bottom of of luminescence unit, transparent anode 13 adopts transparent conductive material to make ,in same luminescence unit, between two organic electroluminescent LED unit of arbitrary neighborhood, share the electrode function layer that same employing transparent conductive material or semi-transparent conductive material are made, the electrode that is luminescence unit the superiors of stacking setting on substrate 14 forms total reflection electrode, make luminescence unit finally realize the lamination luminescent device that parallel way connects, realize lamination recombination luminescence by the organic electroluminescent LED unit that drives different colours in luminescence unit.
In the present embodiment, referring to Fig. 1~Fig. 6, be specially: each luminescence unit is by two organic electroluminescent LED unit stacking formation in parallel, luminescence unit is two-layer compound luminescent device unit, preparation blueness respectively and emitting red light device combine, on substrate 14, be followed successively by the first end emitter junction configuration light emitting diode 101 and the first emission structure at top type light emitting diode 100 from bottom to top, on substrate 14, form the transparent anode 13 of the first end emitter junction configuration light emitting diode 101, first negative electrode of end emitter junction configuration light emitting diode 101 and the negative electrode of the first emission structure at top type light emitting diode 100 are integrally formed the first negative electrode 12, the first negative electrode 12 adopts transparent conductive material or semi-transparent conductive material to make, the anodic formation first anode 11 of the first emission structure at top type light emitting diode 100, the first anode 11 is the total reflection anodes that adopt opaque electric conducting material to make, the electrode that is luminescence unit the superiors of stacking setting on substrate 14 forms total reflection electrode, the first anode 11 forms common anode node with transparent anode 13 on substrate 14, the first negative electrode 12 is electrically connected with the common negative electrode node 15 on substrate 14, between transparent anode 13 and the first negative electrode 12, form the each functional layer structure in inside of the first end emitter junction configuration light emitting diode 101, between the first negative electrode 12 and the first anode 11, form the each functional layer structure in inside of the first emission structure at top type light emitting diode 100, each luminescence unit is all by driving two organic electroluminescent LED unit to realize lamination recombination luminescence.
In the present embodiment, clean and process ito glass substrate and form substrate (14) and transparent anode 13, then by the vacuum thermal evaporation method HI02 functional layer 32 that evaporation thickness is 40nm successively on ito glass substrate, thickness is the NPB functional layer 33 of 10nm, thickness is the DSA-ph functional layer 34 of 20nm, thickness is the TPBi functional layer 35 of 30nm, thickness is the LiF functional layer 36 of 0.3nm, thickness is Al/Ag/Al the first negative electrode 12 of 20nm, thickness is the LiF functional layer (26) of 0.3nm, thickness is the TPBi functional layer (25) of 50nm, thickness is the MCP:10%Rd01 functional layer (24) of 20nm, thickness is the NPB functional layer (23) of 10nm, thickness is the HI02 functional layer (22) of 40nm, thickness is the Ag/Alq/Ag/Alq/Ag first anode 11 of 165nm.
In the present embodiment, for the cleaning of glass substrate, should first clean the substrate (14) with the glass of ITO electrode with cleanser, deionized water rinsing is clean, uses respectively acetone, ethanol and deionized water ultrasonic each 15 minutes, twice of aforesaid operations circulation.And under ozone environment, carry out ultraviolet and process 15 minutes.
In the present embodiment, requiring chamber vacuum degree for vacuum evaporation is 5*10 -5pa, controls respectively suitable evaporation rate for the deposition of each layer of device by above-mentioned each functional layer order and deposits corresponding film.
In the present embodiment, as shown in Figure 5, wherein Fig. 5 a is ITO figure for the mask used plate of recombination luminescence device fabrication processes and ITO electrode pattern, and Fig. 5 b is organic layer deposition template, and Fig. 5 c is electrode deposition mask plate.
In the present embodiment, in the process of recombination luminescence element manufacturing, first make one of them individual devices, then the structure of integration cost embodiment, bring into play desirable adjusting simplicity, this example device detection performance is as follows:
Opening bright voltage at the present embodiment device is 2.2V, brightness 1100cd/m2 when voltage 12V, and chromaticity coordinates is 0.36,0.41.
The recombination luminescence device of the present embodiment organic electroluminescent LED parallel-connection structure type is the electricity parallel-connection structure that utilizes individual devices, realize its separately luminescent layer be independent of each other, thereby the convenient white light of manufacturing, significantly reduces cut-in voltage and improve device brightness under same voltage drives.The present embodiment is take single bi-layer devices as example, and do luminescent device chromaticity coordinates adjusting explanation with white light, such as: adopt 3 layers or more multi-layered combination of devices, adopt similar compound mode to regulate chromaticity coordinates of a certain coloured light etc., be claim of the present utility model and contain.
The present embodiment adopts parallel connection type OLED device architecture, comprises transmitting luminescence unit at the bottom of an OLED top transmitting luminescence unit and an OLED, and in physical structure, they are laminated construction but electricity belongs to parallel connection mode on connecting.The anode that whole device architecture is connected with two electricity with central, clear negative electrode, a side is total reflection anode, a side is transparent anode, and their folded hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer form.The present embodiment is that the design of OLED white light parts brings new thinking, can guarantee in the non-interfering situation of two-layer even multilayer luminescent layer, by the combination of two or more luminescence units and the transmitting of having mated white light.And depress enhancing luminosity in same electrical, reduce the cut-in voltage of device.
embodiment bis-:
The present embodiment and embodiment mono-are basic identical, and special feature is:
In the present embodiment, referring to Fig. 7, each luminescence unit forms by 4 organic electroluminescent LED unit stacked combination in parallel, luminescence unit is 4 layers of recombination luminescence device cell, on substrate 14, be followed successively by the first end emitter junction configuration light emitting diode 101 from bottom to top, the first emission structure at top type light emitting diode 100, the second end emitter junction configuration light emitting diode 102 and the second emission structure at top type light emitting diode 103, on substrate 14, form the transparent anode 13 of the first end emitter junction configuration light emitting diode 101, first negative electrode of end emitter junction configuration light emitting diode 101 and the negative electrode of the first emission structure at top type light emitting diode 100 are integrally formed the first negative electrode 12, second negative electrode of end emitter junction configuration light emitting diode 102 and the negative electrode of the second emission structure at top type light emitting diode 103 are integrally formed the second negative electrode 16, the anode of the anode of the first emission structure at top type light emitting diode 100 and the second end emitter junction configuration light emitting diode 102 is integrally formed the first anode 11, the anodic formation second plate 17 of the second emission structure at top type light emitting diode 103, the first negative electrode 12, the second negative electrode 16 and the first anode 11 all adopt transparent conductive material or semi-transparent conductive material to make, second plate 17 is the total reflection anodes that adopt opaque electric conducting material to make, the electrode that is luminescence unit the superiors of stacking setting on substrate 14 forms total reflection electrode, the first anode 11, second plate 17 forms common anode node with transparent anode 13 on substrate 14, the first negative electrode 12, the second negative electrode 16 is electrically connected with the common negative electrode node 15 on substrate 14, between transparent anode 13 and the first negative electrode 12, form the each functional layer structure in inside of the first end emitter junction configuration light emitting diode 101, between the first negative electrode 12 and the first anode 11, form the each functional layer structure in inside of the first emission structure at top type light emitting diode 100, between the first anode 11 and the second negative electrode 16, form the each functional layer structure in inside of the second end emitter junction configuration light emitting diode 102, between the second negative electrode 16 and second plate 17, form the each functional layer structure in inside of the second emission structure at top type light emitting diode 103, each luminescence unit is all by driving 4 organic electroluminescent LED unit to realize lamination recombination luminescence.
In the present embodiment, luminescence unit is all by driving 4 organic electroluminescent LED unit to realize lamination recombination luminescence, combine by the luminescent device of preparing respectively various coloured light, to the adjusting of luminous brightness and colourity more flexibly effectively, new approaches are provided for the making that improves brightness reduction cut-in voltage or white light parts simultaneously.
Above-described embodiment is take single bi-layer devices as example, and do luminescent device chromaticity coordinates adjusting explanation with white light, such as: adopt 3 layers or more multi-layered combination of devices, adopt similar compound mode to regulate chromaticity coordinates of a certain coloured light etc., be claim of the present utility model and contain.In addition, utilize each individual devices in utility model rather than independently luminescent layer make respectively different color light finally realize the object of mixed white light and each individual devices rather than independently luminescent layer make respectively the object that different color light is mixed into other coloured light and also belong to protection range of the present utility model.
By reference to the accompanying drawings the utility model embodiment is illustrated above, but the utility model is not limited to above-described embodiment, the object that can also create according to utility model of the present utility model is made multiple variation, the change of making under all Spirit Essences according to technical solutions of the utility model and principle, modify, substitute, combination, simplify, all should be equivalent substitute mode, as long as meet utility model object of the present utility model, only otherwise deviate from know-why and the utility model design of the recombination luminescence device of the utility model organic electroluminescent LED parallel-connection structure type, all belong to protection range of the present utility model.

Claims (7)

1. the recombination luminescence device of an organic electroluminescent LED parallel-connection structure type, it is characterized in that: each luminescence unit forms by plural organic electroluminescent LED unit stacked combination in parallel, wherein both comprised emission structure at top type light emitting diode, also comprise end emitter junction configuration light emitting diode, each organic electroluminescent LED unit in same luminescence unit carries out the stacking connection setting of compartment successively with emission structure at top type and end emitter junction configuration, at the same substrate of each organic electroluminescent LED units shared (14) of same luminescence unit, and carry out the setting of parallel connection type structure in the same side of described substrate (14), , at all described organic electroluminescent LED unit of same luminescence unit common anode and negative electrode respectively, at upper common anode node and the common negative electrode node of forming of described substrate (14), wherein with described substrate (14) next-door neighbour be end emitter junction configuration light emitting diode, the stacking emission structure at top type light emitting diode that arranges on emitter junction configuration light emitting diode of the described end again, at the transparent anode (13) of the upper emitter junction configuration light emitting diode of the described end that forms luminescence unit of described substrate (14), described transparent anode (13) adopts transparent conductive material to make ,in same luminescence unit, between two organic electroluminescent LED unit of arbitrary neighborhood, share the electrode function layer that same employing transparent conductive material or semi-transparent conductive material are made, be that luminescence unit forms total reflection electrode at the electrode of the superiors of the upper stacking setting of described substrate (14), make luminescence unit finally realize the lamination luminescent device that parallel way connects, realize lamination recombination luminescence by the organic electroluminescent LED unit that drives different colours in luminescence unit.
2. the recombination luminescence device of organic electroluminescent LED parallel-connection structure type according to claim 1, it is characterized in that: each luminescence unit is by two organic electroluminescent LED unit stacking formation in parallel, luminescence unit is two-layer compound luminescent device unit, on described substrate (14), be followed successively by the first end emitter junction configuration light emitting diode (101) and the first emission structure at top type light emitting diode (100) from bottom to top, at the upper transparent anode (13) that forms described the first end emitter junction configuration light emitting diode (101) of described substrate (14), the negative electrode of the negative electrode of described the first end emitter junction configuration light emitting diode (101) and described the first emission structure at top type light emitting diode (100) is integrally formed the first negative electrode (12), described the first negative electrode (12) adopts transparent conductive material or semi-transparent conductive material to make, the anodic formation first anode (11) of described the first emission structure at top type light emitting diode (100), the described first anode (11) is the total reflection anode that adopts opaque electric conducting material to make, be that luminescence unit forms total reflection electrode at the electrode of the superiors of the upper stacking setting of described substrate (14), the described first anode (11) above forms common anode node with described transparent anode (13) at described substrate (14), described the first negative electrode (12) is electrically connected with the common negative electrode node (15) on described substrate (14), between transparent anode (13) and described the first negative electrode (12), form the each functional layer structure in inside of described the first end emitter junction configuration light emitting diode (101), between the first negative electrode (12) and the described first anode (11), form the each functional layer structure in inside of described the first emission structure at top type light emitting diode (100), each luminescence unit is all by driving two organic electroluminescent LED unit to realize lamination recombination luminescence.
3. the recombination luminescence device of organic electroluminescent LED parallel-connection structure type according to claim 1, it is characterized in that: each luminescence unit forms by 4 organic electroluminescent LED unit stacked combination in parallel, luminescence unit is 4 layers of recombination luminescence device cell, on described substrate (14), be followed successively by the first end emitter junction configuration light emitting diode (101) from bottom to top, the first emission structure at top type light emitting diode (100), the second end emitter junction configuration light emitting diode (102) and the second emission structure at top type light emitting diode (103), at the upper transparent anode (13) that forms described the first end emitter junction configuration light emitting diode (101) of described substrate (14), the negative electrode of the negative electrode of described the first end emitter junction configuration light emitting diode (101) and described the first emission structure at top type light emitting diode (100) is integrally formed the first negative electrode (12), the negative electrode of the negative electrode of described the second end emitter junction configuration light emitting diode (102) and described the second emission structure at top type light emitting diode (103) is integrally formed the second negative electrode (16), the anode of the anode of described the first emission structure at top type light emitting diode (100) and described the second end emitter junction configuration light emitting diode (102) is integrally formed the first anode (11), the anodic formation second plate (17) of described the second emission structure at top type light emitting diode (103), described the first negative electrode (12), described the second negative electrode (16) and the described first anode (11) all adopt transparent conductive material or semi-transparent conductive material to make, described second plate (17) is the total reflection anode that adopts opaque electric conducting material to make, be that luminescence unit forms total reflection electrode at the electrode of the superiors of the upper stacking setting of described substrate (14), the described first anode (11), described second plate (17) above forms common anode node with described transparent anode (13) at described substrate (14), described the first negative electrode (12), described the second negative electrode (16) is electrically connected with the common negative electrode node (15) on described substrate (14), between transparent anode (13) and described the first negative electrode (12), form the each functional layer structure in inside of described the first end emitter junction configuration light emitting diode (101), between described the first negative electrode (12) and the described first anode (11), form the each functional layer structure in inside of described the first emission structure at top type light emitting diode (100), between the described first anode (11) and described the second negative electrode (16), form the each functional layer structure in inside of the second end emitter junction configuration light emitting diode (102), between described the second negative electrode (16) and described second plate (17), form the each functional layer structure in inside of described the second emission structure at top type light emitting diode (103), each luminescence unit is all by driving 4 organic electroluminescent LED unit to realize lamination recombination luminescence.
4. the recombination luminescence device of organic electroluminescent LED parallel-connection structure type according to claim 2, is characterized in that: the thickness of described the first negative electrode (12) is 10-50nm.
5. the recombination luminescence device of organic electroluminescent LED parallel-connection structure type according to claim 3, is characterized in that: the thickness of described the first negative electrode (12), described the second negative electrode (16) and the described first anode (11) is respectively 10-50nm.
6. according to the recombination luminescence device of organic electroluminescent LED parallel-connection structure type described in any one in claim 1~5, it is characterized in that: the thickness of described transparent anode (13) is all 80-180nm.
7. according to the recombination luminescence device of organic electroluminescent LED parallel-connection structure type described in any one in claim 1~5, it is characterized in that: luminescence unit is formation total reflection electrode at the electrode of the superiors of the upper stacking setting of described substrate (14), and the thickness of total reflection electrode is 80-180nm; Or total reflection electrode adopts the laminated construction of Ag/Alq/Ag/Alq/Ag to form laminated material electrode, and the thickness of laminated material electrode is 100-500nm.
CN201320674901.XU 2013-10-30 2013-10-30 Organic electroluminescence diode parallel connected structure mode composite lighting device Expired - Fee Related CN203596354U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104319355A (en) * 2014-11-20 2015-01-28 京东方科技集团股份有限公司 Light-emitting device and drive control method and lamp thereof
CN108605392A (en) * 2016-01-26 2018-09-28 住友化学株式会社 Light-emitting device
CN109253404A (en) * 2018-10-12 2019-01-22 北京夏禾科技有限公司 The OLED lighting device of Color tunable
CN110246832A (en) * 2019-07-04 2019-09-17 深圳市思坦科技有限公司 The preparation method and display device of a kind of luminescent device, luminescent device
CN110808338A (en) * 2019-10-10 2020-02-18 复旦大学 Tandem quantum dot device with double light emitting surfaces

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104319355A (en) * 2014-11-20 2015-01-28 京东方科技集团股份有限公司 Light-emitting device and drive control method and lamp thereof
CN108605392A (en) * 2016-01-26 2018-09-28 住友化学株式会社 Light-emitting device
US20190036079A1 (en) * 2016-01-26 2019-01-31 Sumitomo Chemical Company, Limited Light-emitting device
CN109253404A (en) * 2018-10-12 2019-01-22 北京夏禾科技有限公司 The OLED lighting device of Color tunable
CN110246832A (en) * 2019-07-04 2019-09-17 深圳市思坦科技有限公司 The preparation method and display device of a kind of luminescent device, luminescent device
CN110808338A (en) * 2019-10-10 2020-02-18 复旦大学 Tandem quantum dot device with double light emitting surfaces

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