CN104201293A - All-inorganic quantum-dot light emitting diode - Google Patents
All-inorganic quantum-dot light emitting diode Download PDFInfo
- Publication number
- CN104201293A CN104201293A CN201410468214.1A CN201410468214A CN104201293A CN 104201293 A CN104201293 A CN 104201293A CN 201410468214 A CN201410468214 A CN 201410468214A CN 104201293 A CN104201293 A CN 104201293A
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- Prior art keywords
- light emitting
- emitting diode
- layer
- full
- quantum dots
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000005253 cladding Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 229910003081 TiO2−x Inorganic materials 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000005764 inhibitory process Effects 0.000 abstract 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000000366 colloid method Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
- H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
The invention relates to an all-inorganic quantum-dot light emitting diode. A positive electrode, a light emitting layer, an electron transmission layer and a negative electrode are sequentially superposed on the light emitting diode. A TiO2-x film with n-typed semiconductor defects and a colloidal quantum-dot light emitting layer with p-typed semiconductor defects are adopted. When bias voltage is added to the positive and negative electrodes, p-n junction excitons can be generated at the positions of the interfaces of the electron transmission layer and the light emitting layer. On one hand, transmission efficiency of current carrier electrons can be effectively improved by adopting TiO2-x as the electron transmission layer, on the other hand, inhibition of hole-free transmission layer on light emitting of the excitons can be decreased to a large extent, and electro-optical conversion efficiency of the quantum-dot light emitting diode can be greatly improved.
Description
Technical field
The invention belongs to diode field, particularly a kind of full-inorganic light emitting diode with quantum dots.
Background technology
The advantages such as along with the continuous requirement of society to high efficiency environmental protection and energy saving, novel photoelectric technology LED is with its low power consuming, and heat production is few, long service life replace traditional illuminating material gradually, become the novel green lighting source of tool potentiality in the present age.And the fields such as white-light illuminating, colorful display screen, backlight, coloured lamp decoration are widely used in.Wherein Organic Light Emitting Diode (OLED) grows up at first, but owing to all existing unavoidable problem in encapsulation technology and on useful life, through constantly exploring, discovered in recent years inorganic light-emitting diode can effectively address this problem, not only reduce the strict demand of OLED in encapsulation, can also increase the service life.Current most widely used luminescent material is still phosphor material powder, but the light decay of fluorescent material is large, and uniform particles degree is poor, useful life is short, is not optimal LED luminescent material.。Compared with fluorescent material, the luminous half-peak width (illuminant colour purity is high) of quantum dot, luminous quantum efficiency is high, and glow color can regulate by controlling quantum dot size size.In addition inorganic material, as the transport layer of quantum dot LED (QLED), not only reduces the strict demand of OLED in encapsulation, can also increase the service life.Therefore, QLED becomes the main direction focus of research of current New LED at present, has broad prospects.
Due to the difference of carrier blocking layers, QLED is mainly divided into organic charge carrier transport layer QLED and inorganic carrier blocking layers QLED.The former needs very high starting resistor, and the material air poor stability of organic polymer, non-refractory, and tight encapsulation technology requires high, has very large problem.And although inorganic carrier blocking layers air stability is good, without tight encapsulation, but still there is some problems: hole transmission layer hole is injected the speed of quantum dot and with electron transfer layer, the speed of electronic injection quantum dot existed to very large difference, general electronic injection speed is high, thereby cause electronics to be piled up in quantum dot, excessive electronics will cause quantum dot charging and non-radiative compound.Therefore need to select specific semi-conducting material and quantum dot to match.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of full-inorganic light emitting diode with quantum dots, the invention enables QLED photoelectric conversion efficiency to improve, without strict encapsulation.
A kind of full-inorganic light emitting diode with quantum dots of the present invention, described light-emitting diode superpose successively from below to up anode, quantum dot light emitting layer, electron transfer layer and negative electrode; Its Anodic is metal conducting layer, and quantum dot light emitting layer is Cd
xse
1+x/ ZnS quantum dot luminescent layer, x=0.2-0.8, electron transfer layer is TiO
2-xelectron transfer layer, x=0.5 or 0.8.
Described anode is metal A g electrode or Al electrode.
Vapour deposition method or cladding process are prepared metal conducting layer.
Described metallic conduction layer thickness is 10-100nm.
Described Cd
xse
1+x/ ZnS quantum dot is the p-type structure C d with nucleocapsid structure
xse
1+x/ ZnS quantum dot, x=0.2-0.8.
Described Cd
xse
1+xthe luminous efficiency of/ZnS quantum dot is 70%-90%, and emission peak half-peak breadth is 20-55nm.
Magnetron sputtering method or solvent-thermal method are prepared TiO
2-xelectron transfer layer.
Described TiO
2-xelectron transfer layer is the N-shaped semiconductor TiO of oxygen ion vacancy type
2-xfilm.
TiO
2-Xthe thickness of film is 50-200nm.
Described negative electrode is FTO electro-conductive glass.
Light-emitting diode comprises four parts from bottom to top: ground floor, i.e. and negative electrode, is made up of transparent conductive film FTO and quartz glass (being FTO electro-conductive glass); The second layer, i.e. electron transfer layer, is N-shaped semiconductor TiO
2-xfilm, deposits on FTO electro-conductive glass by solvent-thermal method or magnetron sputtering method; The 3rd layer, i.e. luminescent material Colloidal Quantum Dots layer, is Cd
1+xse
x/ ZnS quantum dot layer, by spin-coating method and TiO
2-xthin layer combination; The 4th layer, i.e. anode, is metallic aluminium or silver, deposits metal in luminescent layer quantum dot surface by vapour deposition method or cladding process.
The present invention is by preparing the quantum dot diode apparatus without hole transmission layer, only need very little bias voltage just can make at electron transfer layer and luminescent layer generation of interfaces p-n junction exciton, electronics and hole injection rate, the synthetic QLED having compared with high fluorescence efficiency, owing to adopting the TiO of perovskite and Rutile structure doping
2film can effectively improve the carrier transport efficiency of electron transfer layer, and avoids using p-type semiconductor as hole transmission layer, reduces its absorption to light and stops, thereby effectively having improved the luminous efficiency of QLED.
beneficial effect
The present invention is by preparing the quantum dot diode apparatus without hole transmission layer, only need very little bias voltage just can make at electron transfer layer and luminescent layer generation of interfaces p-n junction exciton, electronics and hole injection rate, the synthetic QLED having compared with high fluorescence efficiency, owing to adopting the TiO of perovskite and Rutile structure doping
2film can effectively improve the carrier transport efficiency of electron transfer layer, and avoids using p-type semiconductor as hole transmission layer, reduces its absorption to light and stops, thereby having improved the luminous efficiency of QLED.
Brief description of the drawings
Fig. 1 is full-inorganic light emitting diode with quantum dots schematic diagram, and wherein 1 is anode, and 2 is quantum dot light emitting layer, and 3 is electron transfer layer, and 4 is negative electrode, and 5 is substrate.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.In addition should be understood that those skilled in the art can make various changes or modifications the present invention after having read the content of the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Embodiment 1
Negative electrode adopts business FTO electro-conductive glass; Electron transfer layer is TiO prepared by solvent-thermal method
2film, thickness is 150nm; Luminescent layer is nucleocapsid structure CdSe
2/ ZnS quantum dot, emission peak half-peak breadth is 28nm; Quantum dot light emitting efficiency is 84.6%; Anode is the metallic aluminium film of vapour deposition method deposition, and its thickness is 80nm.
Embodiment 2
Negative electrode adopts business FTO electro-conductive glass; Electron transfer layer is anatase and the rutile doped structure N-shaped semiconductor TiO that solvent-thermal method preparation has oxygen ion vacancy
1.2film, thickness 150nm; Luminescent layer be colloid method prepare there is nucleocapsid structure CdSe
2/ ZnS quantum dot, emission peak half-peak breadth is 28nm; Quantum dot light emitting efficiency is 84.6%; Anode is the metallic aluminium film of vapour deposition method deposition, and its thickness is 80nm.
Embodiment 3
Negative electrode adopts business FTO electro-conductive glass; Electron transfer layer is anatase and the rutile doped structure N-shaped semiconductor TiO that solvent-thermal method preparation has oxygen ion vacancy
1.2film, thickness 150nm; Luminescent layer be colloid method prepare there is nucleocapsid structure Cd
1.2se
0.8/ ZnS quantum dot, emission peak half-peak breadth is 32nm; Quantum dot light emitting efficiency is 86%; Anode is the metallic aluminium film of vapour deposition method deposition, and its thickness is 80nm.
Embodiment 4
Negative electrode adopts business FTO electro-conductive glass; Electron transfer layer is anatase and the rutile doped structure N-shaped semiconductor TiO that solvent-thermal method preparation has oxygen ion vacancy
1.2film, thickness 100nm; Luminescent layer be colloid method prepare there is nucleocapsid structure Cd
1.2se
0.8/ ZnS quantum dot, emission peak half-peak breadth is 32nm; Quantum dot light emitting efficiency is 86%; Anode is the argent film of vapour deposition method deposition, and its thickness is 80nm.
Embodiment 5
Negative electrode adopts business FTO electro-conductive glass; Electron transfer layer is anatase and the rutile doped structure N-shaped semiconductor TiO that solvent-thermal method preparation has oxygen ion vacancy
1.2film, thickness 150nm; Luminescent layer be colloid method prepare there is nucleocapsid structure Cd
1.5se
0.5/ ZnS quantum dot, emission peak half-peak breadth is 29nm; Quantum dot light emitting efficiency is 83.7%; Anode is the argent film of vapour deposition method deposition, and its thickness is 50nm.
Embodiment 6
Negative electrode adopts business FTO electro-conductive glass; Electron transfer layer is anatase and the rutile doped structure N-shaped semiconductor TiO that solvent-thermal method preparation has oxygen ion vacancy
1.2film, thickness 150nm; Luminescent layer be colloid method prepare there is nucleocapsid structure Cd
1.5se
0.5/ ZnS quantum dot, emission peak half-peak breadth is 29nm; Quantum dot light emitting efficiency is 83.7%; Anode is the argent film of vapour deposition method deposition, and its thickness is 50nm.
Embodiment 7
Negative electrode adopts business FTO electro-conductive glass; Electron transfer layer is anatase and the rutile doped structure N-shaped semiconductor TiO that solvent-thermal method preparation has oxygen ion vacancy
1.5film, thickness 100nm; Luminescent layer be colloid method prepare there is nucleocapsid structure Cd
1.5se
0.5/ ZnS quantum dot, emission peak half-peak breadth is 29nm; Quantum dot light emitting efficiency is 83.7%; Anode is the argent film of vapour deposition method deposition, and its thickness is 50nm.
Claims (10)
1. a full-inorganic light emitting diode with quantum dots, is characterized in that: described light-emitting diode superpose successively from below to up anode, quantum dot light emitting layer, electron transfer layer and negative electrode; Its Anodic is metal conducting layer, and quantum dot light emitting layer is Cd
xse
1+x/ ZnS quantum dot luminescent layer, x=0.2-0.8, electron transfer layer is TiO
2-xelectron transfer layer, x=0.5 or 0.8.
2. a kind of full-inorganic light emitting diode with quantum dots according to claim 1, is characterized in that: described anode is metal A g electrode or Al electrode.
3. a kind of full-inorganic light emitting diode with quantum dots according to claim 1, is characterized in that: vapour deposition method or cladding process are prepared metal conducting layer.
4. a kind of full-inorganic light emitting diode with quantum dots according to claim 1, is characterized in that: described metallic conduction layer thickness is 10-100nm.
5. a kind of full-inorganic light emitting diode with quantum dots according to claim 1, is characterized in that: described Cd
xse
1+x/ ZnS quantum dot is the p-type structure C d with nucleocapsid structure
xse
1+x/ ZnS quantum dot, x=0.2-0.8.
6. a kind of full-inorganic light emitting diode with quantum dots according to claim 1, is characterized in that: described Cd
xse
1+xthe luminous efficiency of/ZnS quantum dot is 70%-90%, and emission peak half-peak breadth is 20-55nm.
7. a kind of full-inorganic light emitting diode with quantum dots according to claim 1, is characterized in that: magnetron sputtering method or solvent-thermal method are prepared TiO
2-xelectron transfer layer.
8. a kind of full-inorganic light emitting diode with quantum dots according to claim 1, is characterized in that: described TiO
2-xelectron transfer layer is the N-shaped semiconductor TiO of oxygen ion vacancy type
2-xfilm.
9. a kind of full-inorganic light emitting diode with quantum dots according to claim 8, is characterized in that: TiO
2-Xthe thickness of film is 50-200nm.
10. a kind of full-inorganic light emitting diode with quantum dots according to claim 1, is characterized in that: described negative electrode is FTO electro-conductive glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410468214.1A CN104201293A (en) | 2014-09-15 | 2014-09-15 | All-inorganic quantum-dot light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410468214.1A CN104201293A (en) | 2014-09-15 | 2014-09-15 | All-inorganic quantum-dot light emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN104201293A true CN104201293A (en) | 2014-12-10 |
Family
ID=52086558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410468214.1A Pending CN104201293A (en) | 2014-09-15 | 2014-09-15 | All-inorganic quantum-dot light emitting diode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331781A (en) * | 2017-06-28 | 2017-11-07 | 河南大学 | A kind of light emitting diode with quantum dots and preparation method |
| CN107871802A (en) * | 2017-10-31 | 2018-04-03 | 京东方科技集团股份有限公司 | The preparation method and magnetic control sputtering device of carrier blocking layers |
| CN113130823A (en) * | 2019-12-30 | 2021-07-16 | Tcl集团股份有限公司 | Photoelectric device and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007112088A2 (en) * | 2006-03-24 | 2007-10-04 | Qd Vision, Inc. | Hyperspectral imaging device |
| CN102047098A (en) * | 2008-04-03 | 2011-05-04 | Qd视光有限公司 | Light-emitting device including quantum dots |
| CN102473800A (en) * | 2009-07-07 | 2012-05-23 | 佛罗里达大学研究基金会公司 | Stable and all solution processable quantum dot light-emitting diodes |
-
2014
- 2014-09-15 CN CN201410468214.1A patent/CN104201293A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007112088A2 (en) * | 2006-03-24 | 2007-10-04 | Qd Vision, Inc. | Hyperspectral imaging device |
| CN102047098A (en) * | 2008-04-03 | 2011-05-04 | Qd视光有限公司 | Light-emitting device including quantum dots |
| CN102473800A (en) * | 2009-07-07 | 2012-05-23 | 佛罗里达大学研究基金会公司 | Stable and all solution processable quantum dot light-emitting diodes |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331781A (en) * | 2017-06-28 | 2017-11-07 | 河南大学 | A kind of light emitting diode with quantum dots and preparation method |
| CN107871802A (en) * | 2017-10-31 | 2018-04-03 | 京东方科技集团股份有限公司 | The preparation method and magnetic control sputtering device of carrier blocking layers |
| CN113130823A (en) * | 2019-12-30 | 2021-07-16 | Tcl集团股份有限公司 | Photoelectric device and preparation method thereof |
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Application publication date: 20141210 |