CN110176548A - A kind of dual emission formula white light quanta point light emitting diode and preparation method thereof - Google Patents
A kind of dual emission formula white light quanta point light emitting diode and preparation method thereof Download PDFInfo
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
- H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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- H10K71/10—Deposition of organic active material
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- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
Abstract
The invention discloses a kind of dual emission formula white light quanta point light emitting diodes and preparation method thereof.For the lower problem of white light quanta point device efficiency, the present invention uses red, green, blue laminated structure quantum dot, and one layer of nanoscopic barrier material is added between monochromatic quantum dot, prevent interpenetrating between different color quantum dot, the injection for balancing electrons and holes in light emitting diode with quantum dots achievees the purpose that improve device performance.Simultaneously as the anodic-cathodic of device is all made of transparent electrode, lack the reflex of virgin metal electrode, the brightness of dual emission device can reduce, it is then desired in balancing device electronics and hole charge velocity, improve shine efficiency；Metal nanoparticle is prepared using noble metal precursor liquid system, transparent electrode is prepared using spin coating or printing type, realizes two-sided luminous effect, increases Observable display view angle.Thus, have great importance to quantum dot light emitting device in luminous and display field development and application.
Description
Technical field
The invention belongs to light emitting diode with quantum dots devices fields, and in particular to a kind of efficient dual emission formula amount of white light
Sub- point luminescent diode and preparation method thereof.
Background technique
Light emitting diode with quantum dots (QLED) is that quanta point material is used to be applied to organic or electrostrictive polymer as luminescent layer
One of electroluminescence device New Type Display Devices.Since the emission spectrum half-peak breadth of quantum dot is narrow, and with quantum dot
The change of size, spectral region can be also subjected to displacement, thus not only luminous efficiency is high for QLED device, but also light emitting region can
Cover entire limit of visible spectrum.Thus, in recent years, extensive pass of the research of QLED device by domestic and international research group
Note.
The performance of white light quanta point light emitting diode is lower, master relative to monochromatic light light emitting diode with quantum dots at present
Such as to use mixing method by blue, green, red quantum dot due to quantum efficiency cut-in voltage and the efficiency difference of different color quantum dot
Mixing can generate internal charge quenching；Laminated type quantum dot light emitting layer is such as used, upper layer quantum dot will be to lower layer's quantum dot
Generate dissolution or infiltration.The performance for improving white light quanta point light emitting diode at present is mainly the quantum for passing through optimization quantum dot
Efficiency realizes that this method difficulty is big and at high cost.
Summary of the invention
Goal of the invention: the object of the present invention is to provide a kind of dual emission formula white light quanta point light emitting diode and its preparations
Method balances electricity in light emitting diode with quantum dots by the way that one layer of nano material barrier layer is added in monochromatic quantum dot luminescent layer
The charge velocity of son and hole achievees the purpose that improve device performance.Meanwhile the upper/lower electrode of device is all made of transparent electrode,
Two-sided luminous effect can be achieved, increase Observable face.
Technical solution: to achieve the goals above, a kind of dual emission formula white light quanta point luminous two of the present invention
Pole pipe, including anode, the hole injection layer sequentially formed on bright conducting glass substrate, hole transmission layer, blue light quantum point layer,
One nanoscopic barrier, green light quantum point layer, the second nanoscopic barrier, red light quantum point layer, electron transfer layer and transparent cathode.Its
Middle nanoscopic barrier is made of single layer nano particle, thick 1-10nm, transparent cathode thickness 5-20nm, the light emitting diode with quantum dots
For device under certain voltage driving, luminescent quantum dot layer electroluminescent generates white-light emitting.Quantum is prevented using nanoscopic barrier
Dissolution mutually is blended between point, improves the performance of device.
In preferred embodiments, the nanoscopic barrier is by nano-ZnO containing single layer or TiO2Or SnO2Particle composition,
Granular size is 1-10nm.
In preferred embodiments, the transparent cathode is to prepare metal nanoparticle using noble metal precursor liquid, is used
The transparent electrode of spin coating or printing type preparation.
In preferred embodiments, the transparent cathode is gold nano metal electrode；By noble metal precursor liquid, such as perchloric acid
Golden HAuCl4Sodium citrate (mass fraction 0.1-1%) is added in the aqueous solution of (mass fraction 0.01-1%), is heated to boiling,
Reaction time 1-10 minute generates gold nano grain；By gold nano grain spin coating or printing to electron-transport layer surface, drying is warm
80-150 degree, time 10-30 minute are spent, film thickness 5-20nm forms fine and close transparent conductive electrode.
In another preferred embodiment of the present, the transparent cathode is platinum nano metal electrode；By chloroplatinic acid H2PtCl6Dissolution
The solution that 0.1-1mg/mL is formed in ethylene glycol EG, the pH value that a certain amount of NaOH/EG solution adjusting solution is added make its position
Between 12-14, it is heated with stirring to 120-150 degree, is reacted 1-6 hours；By the Pt nanoparticle spin coating after reaction or print extremely
Electron-transport layer surface, drying temperature 80-150 degree, time 10-30 minute, film thickness 5-20nm form fine and close electrically conducting transparent electricity
Pole.
In preferred embodiments, the transparent conducting glass substrate is ITO (indium tin oxide In2O3:Sn), FTO
(SnO2:F), AZO (ZnO:Al) substrate.
A kind of preparation method of dual emission formula white light quanta point light emitting diode of the present invention includes the following steps:
(1) hole injection layer is prepared on transparent conducting glass substrate, and is sintered 10-30 minutes in a nitrogen environment, is burnt
Junction temperature 100-200 degree；
(2) hole transmission layer painting is threaded on hole injection layer, and be sintered 10-30 minutes in a nitrogen environment, sintering temperature
Spend 100-200 degree；
(3) blue light quantum point painting is configured to concentration 20-50mg/mL, be threaded on hole transmission layer, and in a nitrogen environment
Sintering 10-30 minutes, sintering temperature 100-200 degree；
(4) by ZnO or TiO2Or SnO2Solution of the particle formulation at 20-50mg/mL, spin coating rate 1000-5000rpm/
Min, time 30-40 second, drying temperature 100-200 degree are spun on blue light quantum point layer；
(5) green quantum spot printing is configured to concentration 20-50mg/mL, be threaded on nanoscopic barrier, and in a nitrogen environment
Sintering 10-30 minutes, sintering temperature 100-200 degree；
(6) by ZnO or TiO2Or SnO2Solution of the particle formulation at 20-50mg/mL, spin coating rate 1000-5000rpm/
Min, time 30-40 second, drying temperature 100-200 degree are spun on green light quantum point layer；
(7) red quantum spot printing is configured to concentration 20-50mg/mL, be threaded on nanoscopic barrier, and in a nitrogen environment
Sintering 10-30 minutes, sintering temperature 100-200 degree；
(8) by ZnO or TiO2Or ZnO:MgO particle formulation is at the solution of 20-50mg/mL, spin coating rate 1000-
5000rpm/min, time 30-40 second, drying temperature 100-200 degree are spun on red light quantum point layer；
(9) by the perchloric acid gold HAuCl of mass fraction 0.01-1%4Mass fraction 0.1-1% lemon is added in aqueous solution
Sour sodium is heated to boiling, reaction time 1-10 minute, generates gold nano grain；By gold nano grain spin coating or print to electronics
Layer surface is transmitted, drying temperature 80-150 degree, time 10-30 minute, film thickness 5-20nm forms fine and close transparent conductive electrode；
Alternatively, by chloroplatinic acid H2PtCl6It is dissolved in the solution for forming 0.1-1mg/mL in ethylene glycol EG, is added a certain amount of
The pH value that NaOH/EG solution adjusts solution is located between 12-14, is heated with stirring to 120-150 degree, is reacted 1-6 hours；It will
Pt nanoparticle spin coating after reaction or printing are to electron-transport layer surface, drying temperature 80-150 degree, time 10-30 minute,
Film thickness 5-20nm forms fine and close transparent conductive electrode.
The utility model has the advantages that dual emission formula white light quanta point light emitting diode disclosed by the invention is using double transparent electrodes, benefit
Metal nanoparticle is prepared with noble metal precursor liquid, transparent electrode is prepared using spin coating or printing type, realizes double-side effect
Fruit increases Observable display view angle.Simultaneously in view of being all made of transparent electrode due to the anodic-cathodic of device, lack virgin metal electricity
The brightness of the reflex of pole, dual emission device can reduce, the present invention use red, green, blue laminated structure quantum dot, and
One layer of nanoscopic barrier material is added between monochromatic quantum dot, can prevent from mutually blending dissolution between different color quantum dot,
The injection for balancing electronics and hole in light emitting diode with quantum dots, increases the luminous efficiency of device.Diode of the invention is opened
Voltage is 4V, and luminescent color is white；Light emission luminance is greater than 10000cd/m2, device efficiency is greater than 10cd/A.In addition, inorganic receive
Rice grain blocks air and aqueous vapor, improves the performances such as the application life of device.
Detailed description of the invention
Fig. 1 is dual emission formula white light quanta point light emitting diode construction schematic diagram, in which: 1- anode, the injection of the hole 2-
Layer, 3- hole transmission layer, 4- blue light quantum point layer, the first nanoscopic barrier of 5-, 6- green light quantum point layer, second nanometer of 7- blocking
Layer, 8- red light quantum point layer, 9- electron transfer layer and 10- transparent cathode.
Fig. 2 is dual emission formula white light quanta point light emitting diode pictorial diagram.
Fig. 3 is the EL spectrogram of the dual emission formula white light quanta point light emitting diode construction device of the embodiment of the present invention 1,
Voltage tester scope 3.5-6.5V, cut-in voltage 4V, luminescent color are white；Light emission luminance is greater than 10000cd/m2, device
Efficiency is greater than 10cd/A.
Fig. 4 is the dual emission formula light emitting diode with quantum dots structure devices on the non-plus nano barrier layer of comparative example of the present invention
EL spectrogram, voltage tester scope 3.5-6.5V, cut-in voltage 4V, due to interpenetrating for quantum dot layer, feux rouges opens electricity
Press minimum, final red emission occupies leading；Light emission luminance is less than 1000cd/m2, device efficiency is less than 2cd/A.
Specific embodiment
A kind of dual emission formula white light quanta point LED device disclosed by the embodiments of the present invention, as shown in Figure 1, packet
Include the anode 1 sequentially formed on transparent conducting glass substrate, hole injection layer 2, hole transmission layer 3, blue light quantum point layer 4,
First nanoscopic barrier 5, green light quantum point layer 6, the second nanoscopic barrier 7, red light quantum point layer 8, electron transfer layer 9 and transparent
Cathode 10.Wherein: ITO (indium tin oxide In2O3:Sn), FTO (SnO2:F), AZO can be used in transparent conducting glass substrate 1
(ZnO:Al) substrates such as；Poly- (the 3,4-rthylene dioxythiophene)-polystyrene of organic material can be used in hole injection layer 10-20nm
Sulfonic acid PEDOT:PSS etc.；3 thickness 30-40nm of hole transmission layer, can be used organic polyethylene base carbazole (PVK), TFB poly- [(9,9-
Di-n-octyl fluorenyl -2,7- diyl)-alt- (4,4'- (N- (4- normal-butyl) phenyl)-diphenylamines)] etc., the nothing of hole injection layer
Machine material has: MoOx, WOx, NiO and CuO etc.；9 thickness 50-60nm of electron transfer layer, can be used ZnO, TiO2, ZnO:MgO etc.；It receives
Rice barrier layer 5 and 7 is made of nano-ZnO or TiO2 or SnO2 particle, thick 1-10nm, quantum dot light emitting layer 4 and 6 and 8 thickness 30nm,
Core-shell structure can be used, core is one or more of vulcanization good fortune, selenizing good fortune, pound good fortune, vulcanized lead, lead selenide, and shell is sulphur
Change one of zinc, zinc selenide；The platinum or gold nano metal electricity of chemical method preparation can be used in 10 thickness 5-20nm of transparent electrode
Pole.Fig. 2 is the pictorial diagram of dual emission formula white light quanta point light emitting diode, the device luminous face when driving voltage is greater than 4V
For color with keeping stablizing, luminescent color is white；Light emission luminance is greater than 10000cd/m2, device efficiency is greater than 10cd/A.
The preparation method of above-mentioned dual emission formula white light quanta point LED device disclosed by the embodiments of the present invention, packet
Include following steps:
(1) hole injection layer is prepared on transparent conducting glass substrate, and is sintered 10-30 minutes in a nitrogen environment, is burnt
Junction temperature 100-200 degree；
(2) hole transmission layer painting is threaded on hole injection layer, and be sintered 10-30 minutes in a nitrogen environment, sintering temperature
Spend 100-200 degree；
(3) blue light quantum point painting is configured to concentration 20-50mg/mL, be threaded on hole transmission layer, and in a nitrogen environment
Sintering 10-30 minutes, sintering temperature 100-200 degree；
(4) by ZnO or TiO2Or SnO2Solution of the particle formulation at 20-50mg/mL, spin coating rate 1000-5000rpm/
Min, time 30-40 second, drying temperature 100-200 degree are spun on blue light quantum point layer；
(5) green quantum spot printing is configured to concentration 20-50mg/mL, be threaded on nanoscopic barrier, and in a nitrogen environment
Sintering 10-30 minutes, sintering temperature 100-200 degree；
(6) by ZnO or TiO2Or SnO2Solution of the particle formulation at 20-50mg/mL, spin coating rate 1000-5000rpm/
Min, time 30-40 second, drying temperature 100-200 degree are spun on green light quantum point layer；
(7) red quantum spot printing is configured to concentration 20-50mg/mL, be threaded on nanoscopic barrier, and in a nitrogen environment
Sintering 10-30 minutes, sintering temperature 100-200 degree；
(8) by ZnO or TiO2Or SnO2Solution of the particle formulation at 20-50mg/mL, spin coating rate 1000-5000rpm/
Min, time 30-40 second, drying temperature 100-200 degree are spun on red light quantum point layer；
(9) metal nanoparticle is prepared using noble metal precursor liquid, the transparent electrode prepared using spin coating or printing type.
The following are specific examples, transparent conducting glass in following example, hole injection layer, hole transmission layer, and blue light/
Green/red quantum dot, electron transfer layer is consistent with the material of existing structure, be respectively adopted herein ITO, PEDOT:PSS, TFB,
B-QD/G-QD/R-QD,ZnO.But the present invention program is not limited to these materials, and the adoptable other materials of existing structure can also reach
To similar performance.It is not listed one by one and repeats herein.In following embodiment, hole injection layer thickness 10nm, hole transport thickness
30nm, electron-transport thickness 50nm, quantum dot light emitting thickness 30nm.
Embodiment 1:
(1) hole injection layer is prepared on transparent conducting glass substrate, and is sintered 20 minutes in a nitrogen environment, sintering temperature
150 degree of degree.
(2) hole transmission layer painting is threaded on hole injection layer, and be sintered 20 minutes in a nitrogen environment, sintering temperature
150 degree.
(3) blue light quantum point painting is configured to concentration 20mg/mL, be threaded on hole transmission layer, and burn in a nitrogen environment
Knot 20 minutes, 150 degree of sintering temperature.
(4) ZnO particle is configured to the solution of 20mg/mL, overrich causes multi-layer quantum point film to be formed, excessively dilute to cause single layer
Coverage is discontented；Spin coating rate 4000rpm/min, time 30-40 second, drying temperature 100-200 degree are spun on blue light amount
On son point layer.
(5) green quantum spot printing is configured to concentration 20mg/mL, be threaded on ZnO nano layer, and be sintered in a nitrogen environment
20 minutes, 150 degree of sintering temperature.
(6) ZnO particle is configured to the solution of 20mg/mL, spin coating rate 4000rpm/min, time 30-40 second, drying
Temperature 100-200 degree, is spun on green light quantum point layer.
(7) red quantum spot printing is configured to concentration 20mg/mL, be threaded on ZnO nano layer, and be sintered in a nitrogen environment
20 minutes, 150 degree of sintering temperature.
(8) ZnO particle is configured to the solution of 20mg/mL, spin coating rate 4000rpm/min, time 30-40 second, drying
Temperature 100-200 degree, is spun on red light quantum point layer.
(9) by noble metal precursor liquid, such as perchloric acid gold HAuCl4Lemon is added in the aqueous solution of (mass fraction 0.01%)
Sour sodium (mass fraction 0.5%), is heated to boiling, and the reaction time 10 minutes, generates gold nano grain；By gold nano grain spin coating
Or printing dries 120 degree, the time 20 minutes, film thickness 10nm, forms fine and close transparent conductive electrode to electron-transport layer surface.
Embodiment 2:
(1) hole injection layer is prepared on transparent conducting glass substrate, and is sintered 20 minutes in a nitrogen environment, sintering temperature
150 degree of degree.
(2) hole transmission layer painting is threaded on hole injection layer, and be sintered 20 minutes in a nitrogen environment, sintering temperature
150 degree.
(3) blue light quantum point painting is configured to concentration 20mg/mL, be threaded on hole transmission layer, and burn in a nitrogen environment
Knot 20 minutes, 150 degree of sintering temperature.
(4) ZnO particle is configured to the solution of 30mg/mL, overrich causes multi-layer quantum point film to be formed, excessively dilute to cause single layer
Coverage is discontented；Spin coating rate 4000rpm/min, time 30-40 second, drying temperature 100-200 degree are spun on blue light amount
On son point layer.
(5) green quantum spot printing is configured to concentration 20mg/mL, be threaded on ZnO nano layer, and be sintered in a nitrogen environment
20 minutes, 150 degree of sintering temperature.
(6) ZnO particle is configured to the solution of 30mg/mL, spin coating rate 4000rpm/min, time 30-40 second, drying
Temperature 100-200 degree, is spun on green light quantum point layer.
(7) red quantum spot printing is configured to concentration 20mg/mL, be threaded on ZnO nano layer, and be sintered in a nitrogen environment
20 minutes, 150 degree of sintering temperature.
(8) ZnO particle is configured to the solution of 30mg/mL, spin coating rate 4000rpm/min, time 30-40 second, drying
Temperature 100-200 degree, is spun on red light quantum point layer.
(9) by noble metal precursor liquid, chloroplatinic acid H2PtCl6It is dissolved in the solution for forming 0.5mg/ML in ethylene glycol EG, is added
A certain amount of NaOH/EG solution adjusts the pH value 13 of solution, is heated with stirring to 140 degree, reacts 3 hours.Platinum after reaction is received
Rice grain spin coating or printing dry 120 degree, the time 20 minutes, film thickness 10nm, form the transparent of densification to electron-transport layer surface
Conductive electrode.
Embodiment 3:
(1) hole injection layer is prepared on transparent conducting glass substrate, and is sintered 20 minutes in a nitrogen environment, sintering temperature
150 degree of degree.
(2) hole transmission layer painting is threaded on hole injection layer, and be sintered 20 minutes in a nitrogen environment, sintering temperature
150 degree.
(3) blue light quantum point painting is configured to concentration 20mg/mL, be threaded on hole transmission layer, and burn in a nitrogen environment
Knot 20 minutes, 150 degree of sintering temperature.
(4) ZnO particle is configured to the solution of 30mg/mL, overrich causes multi-layer quantum point film to be formed, excessively dilute to cause single layer
Coverage is discontented；Spin coating rate 4000rpm/min, time 30-40 second, drying temperature 100-200 degree are spun on blue light amount
On son point layer.
(5) green quantum spot printing is configured to concentration 20mg/mL, be threaded on ZnO nano layer, and be sintered in a nitrogen environment
20 minutes, 150 degree of sintering temperature.
(6) ZnO particle is configured to the solution of 30mg/mL, spin coating rate 4000rpm/min, time 30-40 second, drying
Temperature 100-200 degree, is spun on green light quantum point layer.
(7) red quantum spot printing is configured to concentration 20mg/mL, be threaded on ZnO nano layer, and be sintered in a nitrogen environment
20 minutes, 150 degree of sintering temperature.
(8) ZnO particle is configured to the solution of 30mg/mL, spin coating rate 4000rpm/min, time 30-40 second, drying
Temperature 100-200 degree, is spun on red light quantum point layer.
(9) by noble metal precursor liquid, such as perchloric acid gold HAuCl4, (mass fraction 0.5%) aqueous solution in lemon is added
Sour sodium (mass fraction 1%), is heated to boiling, and the reaction time 5 minutes, generates gold nano grain；By gold nano grain spin coating or
Printing dries 150 degree, the time 30 minutes, film thickness 20nm, forms fine and close transparent conductive electrode to electron-transport layer surface.
Comparative example:
Preparing for comparative example is substantially the same manner as Example 1, and difference is no nanoscopic barrier.
Following table is the effect comparison table of above-described embodiment, it is seen that the present invention realizes the two-sided effect to emit white light, and device
Efficiency is high.
Claims (7)
1. a kind of dual emission formula white light quanta point light emitting diode, which is characterized in that including on transparent conducting glass substrate according to
The anode (1) of secondary formation, hole injection layer (2), hole transmission layer (3), blue light quantum point layer (4), the first nanoscopic barrier
(5), green light quantum point layer (6), the second nanoscopic barrier (7), red light quantum point layer (8), electron transfer layer (9) and transparent cathode
(10)；First nanoscopic barrier (5) and the second nanoscopic barrier (7) are made of single layer nano particle, and thick 1-10nm is described
Transparent cathode (10) thickness 5-20nm.
2. a kind of dual emission formula white light quanta point light emitting diode according to claim 1, which is characterized in that described to receive
Rice barrier layer is by single layer nano-ZnO or TiO2Or SnO2Particle composition, granular size 1-10nm.
3. a kind of dual emission formula white light quanta point light emitting diode according to claim 1, which is characterized in that described
Bright cathode is to prepare metal nanoparticle using noble metal precursor liquid, the transparent electrode prepared using spin coating or printing type.
4. a kind of dual emission formula white light quanta point light emitting diode according to claim 3, which is characterized in that described
Bright cathode is gold nano metal electrode；By the perchloric acid gold HAuCl of mass fraction 0.01-1%4Mass fraction is added in aqueous solution
0.1-1% sodium citrate is heated to boiling, reaction time 1-10 minute, generates gold nano grain；By gold nano grain spin coating or
It prints to electron-transport layer surface, drying temperature 80-150 degree, time 10-30 minute, film thickness 5-20nm, forms the transparent of densification
Conductive electrode.
5. a kind of dual emission formula white light quanta point light emitting diode according to claim 3, which is characterized in that described
Bright cathode is platinum nano metal electrode；By chloroplatinic acid H2PtCl6It is dissolved in the solution for forming 0.1-1mg/mL in ethylene glycol EG, is added
The pH value for entering a certain amount of NaOH/EG solution adjusting solution is located between 12-14, is heated with stirring to 120-150 degree, is reacted
1-6 hours；By the Pt nanoparticle spin coating after reaction or print to electron-transport layer surface, drying temperature 80-150 degree, time
10-30 minutes, film thickness 5-20nm, form fine and close transparent conductive electrode.
6. a kind of dual emission formula white light quanta point light emitting diode according to claim 1, which is characterized in that described
Bright conducting glass substrate is ITO (indium tin oxide In2O3:Sn), FTO (SnO2:F), AZO (ZnO:Al) substrate.
7. a kind of preparation method of dual emission formula white light quanta point light emitting diode, which is characterized in that the diode includes
The anode (1) sequentially formed in electro-conductive glass substrate, hole injection layer (2), hole transmission layer (3), blue light quantum point layer (4),
First nanoscopic barrier (5), green light quantum point layer (6), the second nanoscopic barrier (7), red light quantum point layer (8), electron-transport
Layer (9) and transparent cathode (10)；The preparation method of the diode includes the following steps:
(1) hole injection layer is prepared on transparent conducting glass substrate, and is sintered 10-30 minutes in a nitrogen environment, sintering temperature
Spend 100-200 degree；
(2) hole transmission layer painting is threaded on hole injection layer, and be sintered 10-30 minutes in a nitrogen environment, sintering temperature
100-200 degree；
(3) blue light quantum point painting is configured to concentration 20-50mg/mL, be threaded on hole transmission layer, and be sintered in a nitrogen environment
10-30 minutes, sintering temperature 100-200 degree；
(4) by ZnO or TiO2Or SnO2Solution of the particle formulation at 20-50mg/mL, spin coating rate 1000-5000rpm/min, when
Between 30-40 seconds, drying temperature 100-200 degree is spun on blue light quantum point layer；
(5) green quantum spot printing is configured to concentration 20-50mg/mL, be threaded on nanoscopic barrier, and be sintered in a nitrogen environment
10-30 minutes, sintering temperature 100-200 degree；
(6) by ZnO or TiO2Or SnO2Solution of the particle formulation at 20-50mg/mL, spin coating rate 1000-5000rpm/min, when
Between 30-40 seconds, drying temperature 100-200 degree is spun on green light quantum point layer；
(7) red quantum spot printing is configured to concentration 20-50mg/mL, be threaded on nanoscopic barrier, and be sintered in a nitrogen environment
10-30 minutes, sintering temperature 100-200 degree；
(8) by ZnO or TiO2Or ZnO:MgO particle formulation is at the solution of 20-50mg/mL, spin coating rate 1000-5000rpm/
Min, time 30-40 second, drying temperature 100-200 degree are spun on red light quantum point layer；
(9) by the perchloric acid gold HAuCl of mass fraction 0.01-1%4Mass fraction 0.1-1% sodium citrate is added in aqueous solution,
It is heated to boiling, reaction time 1-10 minute generates gold nano grain；By gold nano grain spin coating or print to electron transfer layer
Surface, drying temperature 80-150 degree, time 10-30 minute, film thickness 5-20nm form fine and close transparent conductive electrode；
Alternatively, by chloroplatinic acid H2PtCl6It is dissolved in the solution for forming 0.1-1mg/mL in ethylene glycol EG, a certain amount of NaOH/ is added
The pH value that EG solution adjusts solution is located between 12-14, is heated with stirring to 120-150 degree, is reacted 1-6 hours；It will reaction
Rear Pt nanoparticle spin coating or printing are to electron-transport layer surface, drying temperature 80-150 degree, time 10-30 minute, film thickness
5-20nm forms fine and close transparent conductive electrode.
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