CN103433491A - Silicon carbide IGBT (Insulated Gate Bipolar Transistor) substrate framework vacuum pressure aluminizing device and double-sided aluminum coating method - Google Patents
Silicon carbide IGBT (Insulated Gate Bipolar Transistor) substrate framework vacuum pressure aluminizing device and double-sided aluminum coating method Download PDFInfo
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Abstract
The invention discloses a silicon carbide IGBT (Insulated Gate Bipolar Transistor) substrate framework vacuum pressure aluminizing device and a double-sided aluminum coating method, and aims to solve the problem that the quality is affected because the traditional silicon carbide IGBT substrate framework is non-uniform in aluminizing and pores exist in an aluminum alloy layer. The silicon carbide IGBT substrate framework vacuum pressure aluminizing device comprises a ceramic crucible arranged in a vacuum pressure infiltration furnace, a holed graphite plate arranged at the bottom of the ceramic crucible, and a plurality of silicon carbide IGBT substrate frameworks and a plurality of stainless steel and ceramic composite plates arranged in the ceramic crucible, wherein one of the stainless steel and ceramic composite plates, which is parallel to the silicon carbide IGBT substrate frameworks, is arranged between every two adjacent silicon carbide IGBT substrate frameworks; the side wall of the ceramic crucible is provided with clamping slots for fixing the silicon carbide IGBT substrate frameworks or stainless steel and ceramic composite plates; and the ceramic crucible is internally provided with cast aluminum alloy with the silicon mass percentage of larger than 13%. The technical problem for uniformly coating aluminum alloy on both sides of a silicon carbide IGBT substrate is solved by using the silicon carbide IGBT substrate framework vacuum pressure aluminizing device, the ceramic crucible can be repeatedly used, and the device is low in cost, high in yield, good in quality and suitable for mass production.
Description
Technical field
The present invention relates to a kind of carborundum IGBT substrate skeleton vacuum pressure aluminising device and the two-sided process of covering aluminium alloy of aluminium silicon carbide IGBT substrate.
Background technology
To have thermal conductivity high because of it for aluminium silicon carbide IGBT substrate, and the characteristics such as thermal coefficient of expansion is low, be widely used in the heat radiation of high-power integrated circuit, Phased Array Radar Antenna, bullet train current-variable controller.
Need to have installing hole and screw on aluminium silicon carbide IGBT substrate, requiring solder side is plane, and another side needs sphere.It is very difficult carrying out machining on aluminium silicon carbide IGBT substrate.Chinese patent CN201110340918.7 openly the know clearly preparation of aluminum silicon carbide composite material IGBT substrate and the method for inlaying aluminium alloy, punching or tapping on the aluminum silicon carbide composite material substrate have been avoided, but punched or tapping on the aluminium alloy of inlaying at the aluminum silicon carbide composite material substrate, improved production efficiency.For the another side of realizing aluminium silicon carbide IGBT substrate is sphere, if carry out machining on aluminium silicon carbide IGBT substrate, also more difficult than punching or tapping.Certainly, if can realize the two-sided aluminium alloy that is covered with on aluminium silicon carbide IGBT substrate, then on aluminium alloy, carry out sphere processing, can avoid the difficulty on machining.But, in vacuum pressure aluminising process, the aluminising frock that adopts stainless steel to make, be easy to distortion after the aluminising of carborundum IGBT substrate skeleton, cause two-sided the in uneven thickness of aluminium alloy that cover of aluminium silicon carbide IGBT substrate, add man-hour carrying out sphere, the aluminium silicon carbide material is easy to expose, and does not reach the two-sided purpose of covering aluminium alloy.Chinese patent CN200780014043.3 discloses " heat radiation part of aluminum/silicon carbide complex and this complex of use ", this patent is that the fiber cloth that upper aluminium oxide or silica are main component is first padded in the two sides of carborundum IGBT substrate skeleton, outside in this fiber cloth presss from both sides demoulding steel plate again, cross layered, clamp and tighten with screw rod with two blocks of steel plates at outermost layer.The key of this patent is that the fiber cloth that aluminium oxide or silica are main component is clipped on carborundum IGBT substrate skeleton, by adjusting the number of plies of fiber cloth, reaches the purpose of adjusting the thickness of aluminum alloy on aluminium silicon carbide IGBT substrate.The inventor verifies this patent, adopt alumina fibre to be clipped on carborundum IGBT substrate skeleton, clamp with the corrosion resistant plate of having brushed releasing agent again, tighten with screw rod, adopt the method for vacuum pressure aluminising, can realize the two-sided aluminium alloy that covers of aluminium silicon carbide IGBT substrate, but, a large amount of minute apertures is arranged on this aluminium alloy layer, after chemical plating nickel-phosphorus alloy, still visible minute aperture, do not reach application requirements.
Summary of the invention
For overcome that existing carborundum IGBT substrate covered framework aluminium exists to cover aluminium inhomogeneous, aluminium alloy layer exists pore to affect the deficiencies such as quality, the present invention aims to provide a kind of carborundum IGBT substrate skeleton vacuum pressure aluminising device and the two-sided aluminium method of covering, this aluminising device and two-sided to cover aluminium method technique simple, cost is low, and quality is good, applied widely.
To achieve these goals, the technical solution adopted in the present invention is:
A kind of carborundum IGBT substrate skeleton vacuum pressure aluminising device; Its design feature is, comprises the ceramic crucible be placed in the vacuum pressure infiltration stove, is arranged on the graphite cake with holes of ceramic crucible bottom; Be contained in polylith carborundum IGBT substrate skeleton and polylith stainless ceramic compoboard in ceramic crucible; Be provided with a described stainless ceramic compoboard be arranged in parallel with it between adjacent two carborundum IGBT substrate skeletons; Have the draw-in groove for fixing described carborundum IGBT substrate skeleton or stainless ceramic compoboard on the sidewall of described ceramic crucible; The Birmasil that siliceous mass fraction is greater than 13% is housed in described ceramic crucible.
Be below the technical scheme of further improvement of the present invention:
The volume fraction of described carborundum IGBT substrate skeleton is 65% ~ 75%.
As a kind of concrete version, described stainless ceramic compoboard comprises ceramic wafer, is positioned at the corrosion resistant plate of ceramic wafer both sides; Wherein ceramic wafer thickness is 3mm ~ 3.2mm, and the corrosion resistant plate thickness of both sides is 0.5mm ~ 1mm.
For conveniently stripped, described ceramic crucible inner surface and stainless ceramic compoboard outer surface are equipped with releasing agent layer.The releasing agent formula of described releasing agent layer is zinc oxide 150g/L～200g/L, waterglass 150mL/L～200mL/L, and remaining is deionized water.
In order to guarantee to cover the uniformity of aluminium, the distance between adjacent two draw-in grooves is 1mm ~ 2.5mm.
For conveniently stripped, described draw-in groove has gradient from its root to tooth section.
Further, the present invention also provides a kind of and has utilized above-mentioned carborundum IGBT substrate skeleton vacuum pressure aluminising device to carry out the two-sided method of covering aluminium to carborundum IGBT substrate skeleton, and this two-sided aluminium method of covering comprises the steps:
1) place graphite cake with holes in the ceramic crucible bottom, and carborundum IGBT substrate skeleton and stainless ceramic compoboard are inserted in the respective card slot of ceramic crucible;
2) siliceous mass fraction is greater than to 13% Birmasil and puts into ceramic crucible;
3) close the vacuum pressure infiltration stove and vacuumize, until vacuum is below 20Pa;
4) heating, vacuum Pressure Infiltration stove to 750 ℃ ~ 850 ℃, insulation 80min ~ 100min; Now, the aluminium alloy liquid level of fusing exceeds at least 20mm than carborundum IGBT substrate skeleton;
5) to being filled with protective gas to furnace pressure in the vacuum pressure infiltration stove, be 7MPa ~ 8MPa, pressurize 15min ~ 25min;
6) protective gas in the discharge stove, cooling rear taking-up aluminium silicon carbide IGBT substrate skeleton blank.
By said structure, a kind of carborundum IGBT skeleton vacuum pressure aluminising device, comprise the ceramic crucible with draw-in groove; Be contained in the graphite cake with holes of the bottom of ceramic crucible; The carborundum IGBT skeleton that volume fraction is 65%; Corrosion resistant plate/ceramic wafer/corrosion resistant plate combination; Aluminium alloy is the Birmasil that silicon content is greater than 13%.Thus, with the bottom of the ceramic crucible of draw-in groove, put 1 porose graphite cake, carborundum IGBT substrate skeleton and corrosion resistant plate/ceramic wafer/corrosion resistant plate combination are intersected respectively and pack in the draw-in groove of ceramic crucible, form carborundum IGBT substrate skeleton aluminising device.
Ceramic crucible sintering after isostatic compaction forms, the mixture that its material is aluminium oxide or aluminium oxide and silica.
Ceramic crucible appearance and size length * wide * height is (160～210) mm * 100mm * (200～300) mm, and wall thickness is 10mm, and bottom is thick is 20mm.
Draw-in groove in ceramic crucible: the length of draw-in groove * wide is (3mm～5mm) * (5.0mm～5.2mm), interval 2 mm.
Ceramic crucible inner brush zinc oxide and waterglass releasing agent, wherein the releasing agent formula is zinc oxide 150g/L～200g/L, waterglass 150mL/L～200mL/L, remaining is deionized water.
Corrosion resistant plate/ceramic wafer/corrosion resistant plate combination: stainless steel thickness of slab 1mm, surface brush zinc oxide and waterglass releasing agent, wherein the releasing agent formula is zinc oxide 150g/L～200g/L, waterglass 150mL/L～200mL/L, remaining is deionized water.Pottery thickness of slab 3.0mm～3.2mm, the mixture that its material is aluminium oxide or aluminium oxide and silica.1 draw-in groove of ceramic crucible is put in 1 corrosion resistant plate/ceramic wafer/corrosion resistant plate combination.
In ceramic crucible, the 1st draw-in groove of first 1 carborundum IGBT skeleton being packed into, again 1 corrosion resistant plate/ceramic wafer/corrosion resistant plate is combined to the 2nd draw-in groove of packing into, the 3rd draw-in groove of again 1 carborundum IGBT skeleton being packed into, by this cross method dress carborundum IGBT skeleton and corrosion resistant plate/ceramic wafer/corrosion resistant plate combination.Appropriate siliceous mass fraction being greater than to 13% Birmasil is placed in carborundum IGBT substrate skeleton vacuum pressure aluminising device, again carborundum IGBT substrate skeleton vacuum pressure aluminising device is put into to the vacuum pressure infiltration stove, close the vacuum drying oven top plug, start to vacuumize, when vacuum is 20Pa when following, start heating, when temperature reaches 750 ℃～850 ℃, insulation 80min～100 min, now, the aluminium alloy liquid level exceeds 20mm than carborundum IGBT substrate skeleton top; Then add nitrogen in the vacuum pressure impregnation stove, its pressure is 7MPa～8MPa, pressurize 15min～25min; After pressurize finishes, when bleeding off nitrogen and naturally cooling to below 50 ℃, take out carborundum IGBT skeleton aluminising device, more every aluminium silicon carbide IGBT substrate blank is taken out.
Compared with prior art, the invention has the beneficial effects as follows: technique of the present invention is simple, and ceramic crucible is reusable, and cost is lower than graphite crucible, applied widely, can realize the suitability for industrialized production of aluminium silicon carbide IGBT substrate.
On aluminium silicon carbide IGBT substrate, resulting aluminium alloy bed thickness is 1mm～2mm, the deflection of aluminum silicon carbide composite material is less than 0.11mm, on aluminium alloy layer, adopt the method for machining easily to realize that welding plane has aluminium alloy, easily is processed into sphere at another side.There are the characteristics such as smooth, even, fine and close at the two-sided aluminium alloy covered of aluminium silicon carbide IGBT substrate, by observation by light microscope, without phenomenons such as fine holes and crackles; This product is done to thermal shock test: from 200 ℃ of insulations 1 hour, take out the running water put into room temperature, after reciprocal 10 times, by observation by light microscope, aluminium silicon carbide IGBT substrate and aluminium alloy layer are without peeling off and the phenomenon such as crackle; In aluminium silicon carbide IGBT substrate, sampling detects: in the time of 20 ℃～25 ℃, thermal conductivity is 185W/mK; In the time of 25 ℃ → 150 ℃, thermal coefficient of expansion is 7.1 * 10
-6/ K; In the time of 20 ℃～25 ℃, bending strength 423MPa.
The invention solves the technical barrier that aluminium silicon carbide IGBT substrate double-faced uniform covers aluminium alloy, ceramic crucible is reusable, and cost is low, and output is high, and quality is good, is suitable for batch production.
Below in conjunction with drawings and Examples, the present invention is further elaborated.
The accompanying drawing explanation
Fig. 1 is the sphere contour mapping datagram (central point: Z value 0.3936mm, eccentric X value 49.57%, eccentric Y value 54.24%) of aluminium silicon carbide IGBT substrate skeleton processing of the present invention;
Fig. 2 is ceramic crucible structural representation of the present invention;
Fig. 3 is the combination schematic diagram of corrosion resistant plate/ceramic wafer of the present invention/corrosion resistant plate.
In the drawings
The 1-ceramic crucible; 2,3,4,5-draw-in groove; 6,8-corrosion resistant plate; The 7-ceramic wafer.
The specific embodiment
Four unit aluminium silicon carbide IGBT contour substrates are of a size of 127mm * 137mm * 5mm, the two-sided aluminium alloy that covers, and welding plane thickness of aluminum alloy 0.03mm, another side is sphere, and thickness of aluminum alloy is minimum is 0.03mm, and peak is 0.390mm.Its step is as follows:
1, ceramic crucible design
(1) as shown in Figure 2, ceramic crucible 1 sintering after isostatic compaction forms, the mixture that its material is aluminium oxide or aluminium oxide and silica.
(2) ceramic crucible appearance and size length * wide * height is 160mm * 100mm * 200mm, and wall thickness is 10mm, and bottom is thick is 20mm.
(3) draw-in groove in ceramic crucible, as shown in Figure 2, draw-in groove 2 for long * wide be 5mm * 5.2mm, interval 2 mm, this draw-in groove has certain gradient from its root to tooth section, be convenient to the demoulding.
2, brush releasing agent
(1) ceramic crucible is heated to 200 ℃, takes out after insulation 30min, within it section's brush zinc oxide and waterglass releasing agent;
(2) this crucible is heated to 200 ℃ again, take out again after insulation 30min, then zinc oxide and waterglass releasing agent are brushed by section within it;
(3) this crucible is heated to 200 ℃ again, after insulation 30min, naturally cooling.
Wherein the releasing agent formula is zinc oxide 150g/L, waterglass 150mL/L, and remaining is deionized water.
3, corrosion resistant plate/ceramic wafer/corrosion resistant plate combination
(1) corrosion resistant plate 131mm * 141mm * 1mm, wherein the stainless steel thickness of slab is 1mm, as stated above at corrosion resistant plate surface brush zinc oxide and waterglass releasing agent, wherein the releasing agent formula is zinc oxide 150g/L, waterglass 150mL/L, remaining is deionized water.
(2) ceramic wafer 131mm * 141mm * 1mm, ceramic thickness of slab 3.0mm wherein, the mixture that its material is aluminium oxide or aluminium oxide and silica.
(3) 1 corrosion resistant plate/ceramic wafer/corrosion resistant plates combine as shown in Figure 3.
4, grinding carborundum IGBT skeleton plane
Select the carborundum IGBT skeleton that volume fraction is 65%, its appearance and size is 131mm * 141mm * 5.5mm, and wearing into appearance and size is 131mm * 141mm * 4.8mm, cleans up, then heats 200 ℃, naturally cooling after insulation 30min.
5, form carborundum IGBT skeleton vacuum pressure aluminising device
As shown in Figure 2, in ceramic crucible 1, by porose, there is graphite cake to keep flat into crucible 1 bottom and draw-in groove tight fit; By the 1st draw-in groove of draw-in groove 2(in the 1st carborundum IGBT skeleton load map 2), again by the 2nd draw-in groove of draw-in groove 3(in the 1st corrosion resistant plate/ceramic wafer/corrosion resistant plate combination load map 2), the 3rd draw-in groove of again the 2nd carborundum IGBT skeleton being packed into, by this cross method dress carborundum IGBT skeleton and corrosion resistant plate/ceramic wafer/corrosion resistant plate combination, until the 5th corrosion resistant plate/ceramic wafer/corrosion resistant plate combines the draw-in groove 4 in load map 2, by draw-in groove 5 in the 6th carborundum IGBT skeleton load map 2.This device has 6 carborundum IGBT skeletons and 5 corrosion resistant plate/ceramic wafer/corrosion resistant plate combinations.
6, the Birmasil that is 13% by appropriate silicon content is placed in carborundum IGBT substrate skeleton vacuum pressure aluminising device, again carborundum IGBT substrate skeleton vacuum pressure aluminising device is put into to the vacuum pressure infiltration stove, close the vacuum drying oven top plug, start to vacuumize, when vacuum is 19Pa, start heating, when temperature reaches 750 ℃, insulation 80min, now, the aluminium alloy liquid level exceeds 20mm than carborundum IGBT substrate skeleton top; Then add nitrogen in the vacuum pressure impregnation stove, its pressure is 7.5MPa, pressurize 15min; After pressurize finishes, when bleeding off nitrogen and naturally cooling to below 50 ℃, take out carborundum IGBT skeleton aluminising device, more every aluminium silicon carbide IGBT substrate blank is taken out.
7, with milling machine, that the processing of the aluminium alloy of single-piece aluminium silicon carbide IGBT substrate blank surface imperfection is smooth.
8, the blank line that is 131mm * 141mm with wire cutting machine by appearance and size cuts into 127mm * 137mm.
9, adopt surface grinding machine to weld plane through the blank mill of 8 processing, until aluminium alloy layer is 0.03mm.
10, the employing numerically controlled lathe will be through the blank forming sphere of 9 processing, and the aluminium alloy layer minimum point is 0.03mm, and peak is 0.390mm.
The sphere contour mapping data of processing on the aluminium alloy layer of aluminium silicon carbide IGBT substrate are (central point: Z value 0.3936mm, eccentric X value 49.57%, eccentric Y value 54.24%) as shown in Figure 1.
The present embodiment resulting aluminium alloy layer effective thickness on aluminium silicon carbide IGBT substrate is 1.5mm, the deflection of aluminum silicon carbide composite material is less than 0.11mm, on aluminium alloy layer, adopt the method for machining to realize that the welding plane has the aluminium alloy layer of 0.03mm, be processed into sphere at another side, the sphere minimum point has the aluminium alloy layer of 0.03mm, peak 0.390mm.There are the characteristics such as smooth, even, fine and close at the two-sided aluminium alloy layer covered of aluminium silicon carbide IGBT substrate, by observation by light microscope, without phenomenons such as fine holes and crackles; This product is done to thermal shock test: from 200 ℃ of insulations 1 hour, take out the running water put into room temperature, after reciprocal 10 times, by observation by light microscope, aluminium silicon carbide IGBT substrate and aluminium alloy layer are without peeling off and the phenomenon such as crackle; In aluminium silicon carbide IGBT substrate, sampling detects: in the time of 20 ℃～25 ℃, thermal conductivity is 185W/mK; In the time of 25 ℃ → 150 ℃, thermal coefficient of expansion is 7.1 * 10
-6/ K; In the time of 20 ℃～25 ℃, bending strength 423MPa.The sphere contour mapping data of processing on the aluminium alloy layer of aluminium silicon carbide IGBT substrate are (central point: Z value 0.3936mm, eccentric X value 49.57%, eccentric Y value 54.24%) as shown in Figure 1.
Six unit aluminium silicon carbide IGBT contour substrates are of a size of 187mm * 137mm * 5mm, the two-sided aluminium alloy that covers, and welding plane thickness of aluminum alloy 0.03mm, another side is sphere, and thickness of aluminum alloy is minimum is 0.03mm, and peak is 0.390mm.Its step is as follows:
1, ceramic crucible design
(1) as shown in Figure 2, ceramic crucible 1 sintering after isostatic compaction forms, the mixture that its material is aluminium oxide or aluminium oxide and silica.
(2) ceramic crucible appearance and size length * wide * height is 210mm * 100mm * 300mm, and wall thickness is 10mm, and bottom is thick is 20mm.
(3) draw-in groove in ceramic crucible, as shown in Figure 2, draw-in groove 2 for long * wide be 5mm * 5.2mm, interval 2 mm, this draw-in groove has certain gradient from root to tooth section, be convenient to the demoulding.
2, brush releasing agent
(1) ceramic crucible is heated to 200 ℃, takes out after insulation 30min, within it section's brush zinc oxide and waterglass releasing agent;
(2) this crucible is heated to 200 ℃ again, take out again after insulation 30min, then zinc oxide and waterglass releasing agent are brushed by section within it;
(3) this crucible is heated to 200 ℃ again, after insulation 30min, naturally cooling.
Wherein the releasing agent formula is zinc oxide 200g/L, waterglass 200mL/L, and remaining is deionized water.
3, corrosion resistant plate/ceramic wafer/corrosion resistant plate combination
(1) corrosion resistant plate 191mm * 141mm * 1mm, wherein the stainless steel thickness of slab is 1mm, as stated above at corrosion resistant plate surface brush zinc oxide and waterglass releasing agent, wherein the releasing agent formula is zinc oxide 200g/L, waterglass 200mL/L, remaining is deionized water.
(2) ceramic wafer 191mm * 141mm * 1mm, ceramic thickness of slab 3.2mm wherein, the mixture that its material is aluminium oxide or aluminium oxide and silica.
(3) 1 corrosion resistant plate/ceramic wafer/corrosion resistant plates combine as shown in Figure 3.
4, grinding carborundum IGBT skeleton plane
Select the carborundum IGBT skeleton that volume fraction is 75%, its appearance and size is 191mm * 141mm * 5.5mm, and wearing into appearance and size is 191mm * 141mm * 4.8mm, cleans up, then heats 200 ℃, naturally cooling after insulation 30min.
5, form carborundum IGBT skeleton vacuum pressure aluminising device
As shown in Figure 2, in ceramic crucible 1, by porose, there is graphite cake to keep flat into crucible 1 bottom and draw-in groove tight fit; By the 1st draw-in groove of draw-in groove 2(in the 1st carborundum IGBT skeleton load map 2), again by the 2nd draw-in groove of draw-in groove 3(in the 1st corrosion resistant plate/ceramic wafer/corrosion resistant plate combination load map 2), the 3rd draw-in groove of again the 2nd carborundum IGBT skeleton being packed into, by this cross method dress carborundum IGBT skeleton and corrosion resistant plate/ceramic wafer/corrosion resistant plate combination, until the 5th corrosion resistant plate/ceramic wafer/corrosion resistant plate combines the draw-in groove 4 in load map 2, by the draw-in groove 5 in the 6th carborundum IGBT skeleton load map 2.This device has 6 carborundum IGBT skeletons and 5 corrosion resistant plate/ceramic wafer/corrosion resistant plate combinations.
6, the Birmasil that is 13.5% by appropriate siliceous mass fraction is placed in carborundum IGBT substrate skeleton vacuum pressure aluminising device, again carborundum IGBT substrate skeleton vacuum pressure aluminising device is put into to the vacuum pressure infiltration stove, close the vacuum drying oven top plug, start to vacuumize, when vacuum is 17Pa, start heating, when temperature reaches 850 ℃, insulation 100min, now, the aluminium alloy liquid level exceeds 20mm than carborundum IGBT substrate skeleton top; Then add nitrogen in the vacuum pressure impregnation stove, its pressure is 8.0MPa, pressurize 25min; After pressurize finishes, when bleeding off nitrogen and naturally cooling to below 50 ℃, take out carborundum IGBT skeleton aluminising device, more every aluminium silicon carbide IGBT substrate blank is taken out.
7, with milling machine, that the processing of the aluminium alloy of single-piece aluminium silicon carbide IGBT substrate blank surface imperfection is smooth.
8, the blank line that is 191mm * 141mm with wire cutting machine by appearance and size cuts into 187mm * 137mm.
9, adopt surface grinding machine to weld plane through the blank mill of 8 processing, until aluminium alloy layer is 0.03mm.
10, the employing numerically controlled lathe will be through the blank forming sphere of 9 processing, and the aluminium alloy layer minimum point is 0.03mm, and peak is 0.390mm.
The present embodiment resulting aluminium alloy layer effective thickness on aluminium silicon carbide IGBT substrate is 1.6mm, the deflection of aluminum silicon carbide composite material is less than 0.13mm, on aluminium alloy layer, adopt the method for machining to realize that the welding plane has the aluminium alloy layer of 0.03mm, be processed into sphere at another side, the sphere minimum point has the aluminium alloy layer of 0.03mm, peak 0.390mm.There are the characteristics such as smooth, even, fine and close at the two-sided aluminium alloy layer covered of aluminium silicon carbide IGBT substrate, by observation by light microscope, without phenomenons such as fine holes and crackles; This product is done to thermal shock test: from 200 ℃ of insulations 1 hour, take out the running water put into room temperature, after reciprocal 10 times, by observation by light microscope, aluminium silicon carbide IGBT substrate and aluminium alloy layer are without peeling off and the phenomenon such as crackle; In aluminium silicon carbide IGBT substrate, sampling detects: in the time of 20 ℃～25 ℃, thermal conductivity is 180W/mK; In the time of 25 ℃ → 150 ℃, thermal coefficient of expansion is 7.0 * 10
-6/ K; In the time of 20 ℃～25 ℃, bending strength 395MPa.
The content that above-described embodiment is illustrated should be understood to these embodiment only for being illustrated more clearly in the present invention, and be not used in, limit the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
Claims (8)
1. a carborundum IGBT substrate skeleton vacuum pressure aluminising device; It is characterized in that, comprise the ceramic crucible (1) be placed in the vacuum pressure infiltration stove, be arranged on the graphite cake with holes of ceramic crucible (1) bottom; Be contained in polylith carborundum IGBT substrate skeleton and polylith stainless ceramic compoboard in ceramic crucible (1); Be provided with a described stainless ceramic compoboard be arranged in parallel with it between adjacent two carborundum IGBT substrate skeletons; Have the draw-in groove (2,3,4,5) for fixing described carborundum IGBT substrate skeleton or stainless ceramic compoboard on the sidewall of described ceramic crucible (1); Described ceramic crucible is equipped with the Birmasil that siliceous mass fraction is greater than 13% in (1).
2. carborundum IGBT substrate skeleton vacuum pressure aluminising device according to claim 1, is characterized in that, the volume fraction of described carborundum IGBT substrate skeleton is 65% ~ 75%.
3. carborundum IGBT substrate skeleton vacuum pressure aluminising device according to claim 1, is characterized in that, described stainless ceramic compoboard comprises ceramic wafer (7), is positioned at the corrosion resistant plate (6,8) of ceramic wafer (7) both sides; Wherein ceramic wafer (7) thickness is 3mm ~ 3.2mm, and the corrosion resistant plate of both sides (6,8) thickness is 0.5mm ~ 1mm.
4. carborundum IGBT substrate skeleton vacuum pressure aluminising device according to claim 1, is characterized in that, described ceramic crucible (1) inner surface and stainless ceramic compoboard outer surface are equipped with releasing agent layer.
5. carborundum IGBT substrate skeleton vacuum pressure aluminising device according to claim 1, is characterized in that, the distance between adjacent two draw-in grooves (2,3,4,5) is 1mm ~ 2.5mm.
6. carborundum IGBT substrate skeleton vacuum pressure aluminising device according to claim 4, is characterized in that, the releasing agent formula of described releasing agent layer is zinc oxide 150g/L～200g/L, waterglass 150mL/L～200mL/L, and remaining is deionized water.
7. according to the described carborundum IGBT of one of claim 1-6 substrate skeleton vacuum pressure aluminising device, it is characterized in that, described (2,3,4,5) draw-in groove has gradient from its root to tooth section.
8. one kind is utilized the described carborundum IGBT of one of claim 1 ~ 7 substrate skeleton vacuum pressure aluminising device to carry out the two-sided method of covering aluminium to carborundum IGBT substrate skeleton, it is characterized in that, comprises the steps:
1) place graphite cake with holes in ceramic crucible (1) bottom, and carborundum IGBT substrate skeleton and stainless ceramic compoboard are inserted in the respective card slot (2,3,4,5) of ceramic crucible;
2) siliceous mass fraction is greater than to 13% Birmasil and puts into ceramic crucible (1);
3) close the vacuum pressure infiltration stove and vacuumize, until vacuum is below 20Pa;
4) heating, vacuum Pressure Infiltration stove to 750 ℃ ~ 850 ℃, insulation 80min ~ 100min, now, the aluminium alloy liquid level of fusing exceeds at least 20mm than carborundum IGBT substrate skeleton;
5) to being filled with protective gas to furnace pressure in the vacuum pressure infiltration stove, be 7MPa ~ 8MPa, pressurize 15min ~ 25min;
6) protective gas in the discharge stove, cooling rear taking-up aluminium silicon carbide IGBT substrate skeleton blank.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104741652A (en) * | 2015-03-23 | 2015-07-01 | 合肥圣达电子科技实业公司 | Threaded hole machining method on high volume fraction aluminum silicon carbide composite material |
| CN104952809A (en) * | 2014-03-25 | 2015-09-30 | 株洲南车时代电气股份有限公司 | Substrate for IGBT module and encapsulation method for IGBT module |
| CN105562660A (en) * | 2015-12-14 | 2016-05-11 | 北京有色金属研究总院 | Preparation method of integral toothed water-cooling plate used for IGBT and provided with S-shaped water-cooling tube |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104952809A (en) * | 2014-03-25 | 2015-09-30 | 株洲南车时代电气股份有限公司 | Substrate for IGBT module and encapsulation method for IGBT module |
| CN104952809B (en) * | 2014-03-25 | 2017-12-12 | 株洲南车时代电气股份有限公司 | It is a kind of for the substrate of IGBT module and the method for packing of IGBT module |
| CN104741652A (en) * | 2015-03-23 | 2015-07-01 | 合肥圣达电子科技实业公司 | Threaded hole machining method on high volume fraction aluminum silicon carbide composite material |
| CN104741652B (en) * | 2015-03-23 | 2017-09-12 | 合肥圣达电子科技实业公司 | A kind of hole processing method on high-volume fractional aluminum silicon carbide composite material |
| CN105562660A (en) * | 2015-12-14 | 2016-05-11 | 北京有色金属研究总院 | Preparation method of integral toothed water-cooling plate used for IGBT and provided with S-shaped water-cooling tube |
| CN105562660B (en) * | 2015-12-14 | 2018-03-27 | 北京有色金属研究总院 | Dentation cooled plate integral preparation methods of the IGBT with S-shaped water cooling tube |
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