CN103430322A - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

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CN103430322A
CN103430322A CN2012800128964A CN201280012896A CN103430322A CN 103430322 A CN103430322 A CN 103430322A CN 2012800128964 A CN2012800128964 A CN 2012800128964A CN 201280012896 A CN201280012896 A CN 201280012896A CN 103430322 A CN103430322 A CN 103430322A
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裵道园
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Abstract

一种太阳能电池包括：衬底；在所述衬底上顺序形成的背电极层、光吸收层和透明电极层；以及势垒层，所述势垒层形成在所述衬底与所述背电极层之间并且包括II族元素。在所述衬底上形成所述势垒层以防止金属发生扩散。因此，可以防止由于衬底中包含的金属成分而导致太阳能电池的效率恶化。

Description

太阳能电池及其制造方法
技术领域
实施例涉及一种太阳能电池及其制造方法。
背景技术
通常，太阳能电池将太阳能转换为电能。近来，随着能耗的增大，已经太阳能电池已经广泛地展开商业化应用。
根据现有技术的太阳能电池是通过在透明衬底上形成半导体层来形成的。金属衬底、玻璃衬底或塑料衬底被用作该透明衬底。
然而，当在金属衬底上形成半导体层时，该衬底中包含的金属成分被吸收到半导体层中，由此使太阳能电池的效率恶化。
发明内容
技术问题
实施例提供了一种太阳能电池，所述太阳能电池能防止由于衬底中包含的金属成分而导致效率恶化，以及一种该太阳能电池的制造方法。
技术问题
根据实施例，提供了一种太阳能电池，包括：衬底；在所述衬底上顺序形成的背电极层、光吸收层和透明电极层；以及势垒层，所述势垒层形成在所述衬底与所述背电极层之间并且包括元素周期表的II族元素。
根据实施例，提供了一种太阳能电池的制造方法，包括：制备金属衬底；在所述金属衬底上形成包括II族元素的势垒层；并且在所述势垒层上顺序地形成背电极层、光吸收层和透明电极层。
有益效果
在根据实施例的太阳能电池中，在衬底上形成用于防止金属发生扩散的势垒层，使得可以防止由于衬底中包含的金属成分而导致太阳能电池的效率恶化。
另外，在根据实施例的太阳能电池中，势垒层包含钠（Na）成分，使得可以由于Na成分的扩散而提高太阳能电池的效率。
附图说明
图1是示出了根据本发明的实施例的其上形成势垒层的太阳能电池的剖视图；
图2是示出了根据本发明的实施例的势垒层的剖视图；
图3至6是示出了根据本发明的实施例的势垒层的修改实例的剖视图；以及
图7至12是示出了根据本发明的实施例的一种太阳能电池的制造方法的剖视图。
具体实施方式
在实施例的描述中，可以明白，当板、导线、电池、装置、表面或图案被称为在另一板、另一导线、另一电池、另一装置、另一表面或另一图案“上”或“下”时，它可以“直接地”或“间接地”在该另一板、另一导线、另一电池、另一装置、另一表面或另一图案上，或者也可以存在一个或多个介入层。已经参考附图描述了构成元件的这些位置。为了说明的目的，可能放大附图所示的元件的大小，并且可能不完全反映实际大小。
图1是示出了根据本发明的实施例的其上形成势垒层的太阳能电池的剖视图，图2是示出了根据本发明的所述实施例的势垒层的剖视图，并且，图3至6是示出了根据本发明的所述实施例的势垒层的修改实例的剖视图。
参见图1，根据实施例的太阳能电池包括：衬底100以及在衬底100上顺序地形成的背电极层200、光吸收层300和透明电极层600；以及，在衬底100和背电极层200之间形成的势垒层700，用于防止包含在衬底100中的金属成分发生扩散。可以在光吸收层300上进一步形成第一缓冲层400和第二缓冲层500。
衬底100具有矩形板形状，并且可以包括透明材料。包含金属成分的金属衬底可用作根据实施例的衬底100。
在衬底100上形成背电极层200。背电极层200作为n型电极，并且可以包括钼（Mo）。
除了Mo之外、背电极层200可以包括作为导电材料的铝（Al）、镍（Ni）、铬（Cr）、钛（Ti）、银（Ag）和金（Au）的至少一种。可以使用同种或异种金属来形成至少两层背电极层200。
在背电极层200上形成光吸收层300。光吸收层300可以具有I-III-VI族化合物。光吸收层300可以包括CIGS、CIGSS、CZTS、CIS、CGS和CdTe的至少一种。
例如，光吸收层300可以包括选自由以下各项组成的组的至少一种金属：CdTe、CuInSe2、Cu(In,Ga)Se2、Cu(In,Ga)(Se,S)2、Ag(InGa)Se2、Cu(In,Al)Se2和CuGaSe2。
可以在光吸收层300上顺序地形成第一缓冲层400和第二缓冲层500。第一缓冲层400可以通过使用包括硫化镉（CdS）的材料来形成。除了CdS之外，第一缓冲层400可以进一步包括诸如CdSe、ZnS、ZnSe或ZnMgxOy的材料。
第一缓冲层400可以具有与背电极层200和透明电极层600之间的中间能带间隙对应的、在约1.9eV至约2.3eV的范围内的能带间隙。第一缓冲层400可以包括至少两层。
第二缓冲层500由ZnO形成，以具有高电阻。第二缓冲层500可以绝缘以下的透明电极层600，并且防止电击损伤。可以根据第一缓冲层400的类型来省略第二缓冲层500。
在第二缓冲层500上形成透明电极层600。透明电极层600包括透明导电材料，或者可以包括掺铝氧化锌（AZO;ZnO:Al）。可以通过使用GZO、BZO、FTO或ITO以及AZO来形成透明电极层600。
透明电极层600的材料不限于上述材料。也就是说，可以通过使用以下各项中之一者来形成透明电极层600：氧化锌（ZnO）、氧化锡（SnO2）和氧化铟锡（ITO），各个都具有高透光率和导电率。
同时，根据实施例的势垒层700在衬底100和背电极层200之间形成。换句话说，在衬底100上形成势垒层700。
如图2中所示，根据实施例的势垒层700用于防止在衬底100中包含的金属成分移动到太阳能电池的半导体层内。为此，势垒层700可以包括ZnO，并且可以形成在衬底100上以具有在例如50nm至1μm的范围中的预定厚度。
除了ZnO之外，Al2O3、SiO2和Cr也可以被用作势垒层700。然而，当通过使用Al2O3、SiO2或Cr来形成势垒层700时，势垒层700具有1微米或更大的厚度，以便防止金属扩散。
然而，如果ZnO被用作势垒层700，则势垒层700可以形成为1微米或更小的厚度，由此降低加工成本并且生产更薄的太阳能电池。
虽然上述的实施例已经说明了势垒层700包括ZnO，但是实施例不限于此。为了提高太阳能电池的效率，势垒层700可以包含Na成分。也就是说，势垒层700可以包括具有钠成分的Na2O和K2O中之一者或两者以及ZnO。
以这种方式，如果势垒层700形成为具有Na2O和K2O中之一者以及ZnO，可以防止在衬底100中包含的金属成分发生扩散，并且向光吸收层300供应Na成分，使得可以提高太阳能电池的效率。Na成分可能因为在用于制造太阳能电池的过程中产生的热量而自然地扩散。
可以基于预设的参考值来灵活地确定在势垒层700中包含的ZnO和Na2O或K2O的含量。
虽然上述实施例已经描述了势垒层700形成为仅包括ZnO，或者ZnO和Na2O或K2O的一层，但是该实施例不限于此。也就是说，势垒层700可以具有多层结构。
如图3和4所示，势垒层700形成在金属衬底100上，并且可以包括II族元素。势垒层700可以包括第一势垒层720和第二势垒层740。
第一势垒层720包括ZnO，并且防止金属发生扩散，并且第二势垒层740可以包括Na2O和K2O之一者或两者，并且可以在制造过程中扩散钠。
如图3所示，可以通过在衬底100上形成第一势垒层720并且在第一势垒层720上形成第二势垒层740来配置势垒层700。相反，如图4中所示，在衬底100上形成第二势垒层740之后，可以在第二势垒层740上形成第一势垒层720。
另外，如图5和6所示，根据实施例的势垒层700可以在衬底100上形成为三层。第一势垒层720可以包括ZnO，并且第二势垒层740可以包括Na2O和K2O中之一者或两者。
因此，如图5所示，可以通过在衬底100上顺序地层压第一势垒层720、第二势垒层740和第一势垒层720来形成势垒层700。如图6中所示，可以通过顺序地层压第二势垒层740、第一势垒层720和第二势垒层740来配置势垒层700。
虽然在上述实施例中描述了具有单层结构、双层结构或三层结构的势垒层700，但是实施例不限于此。换句话说，可以形成具有至少四层结构的势垒层700。可以通过交错地排列第一势垒层和第二势垒层来形成具有至少四层结构的势垒层700。
根据实施例的势垒层在衬底中包含的金属成分发生扩散而导致太阳能电池的功率效率恶化的同时可以通过扩散钠来提高太阳能电池的效率。
虽然在上述实施例中使用金属衬底作为示例，但是如果将不含金属成分的衬底用作衬底100，则势垒层可以形成为包含Na2O或K2O成分而不含ZnO成分。
以下，将参考图7至12来描述根据本发明的实施例的太阳能电池的制造方法。图7至12是示出了根据该实施例的太阳能电池的制造方法的剖视图。
在制备了如图7所示的包含金属成分的衬底100时，执行通过在衬底100上喷洒ZnO800而形成根据实施例的势垒层700的步骤。势垒层700可以具有50nm至1μm的厚度。
相反，当使用多种材料形成势垒层700时，如图8中所示，可以通过同时喷洒分别安装的两种沉积材料来形成势垒层700。
另外，如图9所示，当使用多种材料来将势垒层700形成为多层结构时，通过首先喷洒包含ZnO的第一沉积材料800来在衬底100上形成第一势垒层720。然后，在预定时间之后，通过喷洒包括Na2O和K2O中之一者或它们的混合物的第二沉积材料900来在第一势垒层720上形成第二势垒层740。
因此，可以将势垒层700在衬底100上形成为两层。可以通过上述的沉积方法来形成至少三个势垒层。
以这种方式，如果在衬底100上形成势垒层700，如图10所示，则执行在势垒层700上沉积背电极层200的步骤。通过沉积Mo来形成背电极层200，通过例如溅镀工艺来形成例如0.7μm的预定厚度。
接下来，如图11所示，执行在背电极层200上顺序地形成光吸收层300、第一缓冲层400和第二缓冲层500的步骤。可以通过使用共蒸发沉积CIGS来形成光吸收层300。可以通过以下方式来在光吸收层300上形成n型第一缓冲层400和第二缓冲层500：使用化学浴沉积（CBD）和溅镀工艺来分别沉积硫化镉（CdS）和ZnO。
此后，如图12所示，执行在第二缓冲层500上形成透明电极层600的步骤。可以通过经由溅镀工艺沉积AZO来在第二缓冲层500上形成透明电极层600。因此，可以完成根据实施例的用于高效太阳能电池的制造工艺。
虽然已经参考本发明的多个说明性实施例而描述了实施例，但是应当明白，在本发明的精神和原理范围内，本领域的技术人员可以设计多种其他修改和实施例。更具体地，在本发明、附图和所附的权利要求的范围内，可以对主组合布置的组成部分和/或布置进行各种改变和修改。除了对组成部分和/或布置进行改变和修改之外，替代使用也对于本领域的技术人员也是显而易见的。

Claims (11)

1.一种太阳能电池，包括：
衬底；
在所述衬底上顺序形成的背电极层、光吸收层和透明电极层；以及
势垒层，所述势垒层形成在所述衬底与所述背电极层之间并且包括元素周期表的II族元素。
2.根据权利要求1所述的太阳能电池，其中，所述势垒层具有50nm至1μm的厚度。
3.根据权利要求1所述的太阳能电池，其中，所述势垒层包括ZnO。
4.根据权利要求3所述的太阳能电池，其中，所述势垒层进一步包括Na2O或K2O。
5.根据权利要求1所述的太阳能电池，其中，所述势垒层包括：包括ZnO的第一势垒层；以及包括Na2O或K2O的第二势垒层。
6.根据权利要求5所述的太阳能电池，其中，所述第一势垒层和所述第二势垒层被交错地形成。
7.根据权利要求1所述的太阳能电池，其中，所述衬底包括金属衬底，所述金属衬底包含金属成分。
8.一种太阳能电池的制造方法，包括：
制备金属衬底；
在所述金属衬底上形成包括II族元素的势垒层；并且
在所述势垒层上顺序地形成背电极层、光吸收层和透明电极层。
9.根据权利要求8所述的方法，其中，所述势垒层是通过进一步沉积Na2O和K2O中之一者来形成的。
10.根据权利要求9所述的方法，其中，所述势垒层是通过同时沉积ZnO以及Na2O和K2O中之一者来形成的。
11.根据权利要求9所述的方法，其中，所述势垒层是通过交错地沉积ZnO以及Na2O和K2O中之一者来形成的。
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