CN103426453B - Dynamic voltage and frequency regulation methods and systems - Google Patents

Dynamic voltage and frequency regulation methods and systems Download PDF

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CN103426453B
CN103426453B CN 201210165621 CN201210165621A CN103426453B CN 103426453 B CN103426453 B CN 103426453B CN 201210165621 CN201210165621 CN 201210165621 CN 201210165621 A CN201210165621 A CN 201210165621A CN 103426453 B CN103426453 B CN 103426453B
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memory
voltage
frequency
value
target
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CN103426453A (en )
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姚琮
张丽华
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华为技术有限公司
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Abstract

本发明涉及通信领域,公开了一种动态电压频率调节方法以及系统。 The present invention relates to communication field, and discloses a method and a dynamic voltage frequency regulation system. 方法包括:实时监测存储器的工作电压,计算确定存储器当前所需的工作频率,及该频率对应的目标电压。 A method comprising: real-time monitoring the operating voltage of the memory, the memory required is calculated to determine the current operating frequency and a target voltage corresponding to the frequency. 分别比较目标电压、当前电压与存储器的最低电压预设值大小。 Respectively comparing the target voltage, low voltage current preset voltage and the size of the memory. 根据目标电压,确定读操作预留间隙值目标值,使存储器在目标电压时,存储器的读操作预留时间间隙足够。 The target voltage, a read operation to determine the target value reserved space, when the target voltage of the memory, the read operation of the memory set aside sufficient time gap. 系统包括:工作负载检测单元、频率计算单元、目标电压确定单元、比较单元、读操作预留间隙值目标值确定单元、控制单元、读操作预留间隙值更改单元、功耗管理单元、频率调整单元。 The system comprising: a load detection unit of work, frequency calculating means, the target voltage determination unit, a comparing unit, a read operation space reserved target value determination unit, a control unit, a read operation space reserved value changing unit, power management unit, the frequency adjustment unit. 采用本方案,在确保存储器读操作准确的基础上,可将存储器的工作电压调整到低于预设的最低工作电压,以降低存储器的工作能耗。 According to the present embodiment, to ensure accurate memory read operations based on the operating voltage of the memory may be adjusted to below a predetermined minimum operating voltage, to reduce the energy consumption of the working memory.

Description

动态电压频率调节方法以及系统 Dynamic voltage and frequency regulation methods and systems

技术领域 FIELD

[0001] 本发明涉及通信领域,特别涉及一种动态电压频率调节方法以及系统。 [0001] The present invention relates to the field of communications, particularly to a method and a dynamic voltage frequency regulation system.

背景技术 Background technique

[0002] 随着工作频率的提高和半导体工艺的不断发展,芯片的功耗问题已成为深亚纳米集成电路中的一个重要的考虑因素,动态电压频率调节(Dynamic Voltage Frequencyscaling,简称DVFS)为目前在半导体领域被广泛采用的一种动态电压频率调节技术,DVFS技术具体是在动态调节芯片的运行频率和电压(对于同一芯片,频率越高,需要的电压也越高),从而达到节能的目的。 [0002] With the development of semiconductor technology and improve the operating frequency, the power consumption of the chip has become an important consideration in deep sub-nanometer integrated circuits, dynamic voltage frequency scaling (Dynamic Voltage Frequencyscaling, referred DVFS) is currently a dynamic semiconductor field frequency of the voltage adjustment technique is widely used, particularly in the DVFS technology object dynamically adjusting the operating frequency and voltage of the chip (the same chip for the higher frequency, higher voltage is required) to achieve the energy saving .

[0003] DVFS技术理论主要以以下公式函数(1)、(2)为理论依据: [0003] DVFS technology theory function mainly the following formula (1), (2) the theoretical basis:

[0004] P=aCV2F (I); [0004] P = aCV2F (I);

[0005] E=P*t=aCV2F*t (2); [0005] E = P * t = aCV2F * t (2);

[0006] 其中P为工作负载(功率),a为常数;C为负载电容;V为工作电压;F为频率,t为时间,E为执行一个时长t的任务所需要耗费的能量。 [0006] wherein P is a work load (power), a is a constant; C is the load capacitance; V is the working voltage; F. Is the frequency, t is time, E is the energy of a time t to execute the task you take the.

[0007] 从上面的公式函数(1)、(2)可以看出,降低频率可以降低功率,但是单纯地降低频率并不能节省能量。 [0007] From the above function formula (1), (2) it can be seen, reducing the frequency of power can be reduced, but the frequency can not be simply reduced to save energy. 因为对于一个给定的任务,F*t是一个常量,只有在降低频率的同时降低电压,才能真正地降低能量的消耗。 Because for a given task, F * t is a constant, lower voltage only reduce the frequency at the same time, in order to truly reduce energy consumption.

[0008] 典型的DVFS技术的工作流程如下: [0008] A typical workflow DVFS technique are the following:

[0009] 1、采集与系统负载有关的信号,计算当前的系统负载。 [0009] 1, the system acquisition-related load signal, calculates the current system load. 这个过程可以用软件实现,也可以用硬件实现。 This process can be implemented in software, it can also be implemented in hardware. 软件实现一般是在操作系统的核心调用中安放钩子,特别是调度器,根据其调用的频度来判断系统的负载。 Software generally hook placed in the core of the operating system call, in particular the scheduler to determine the load system in accordance with the frequency of their calls. 硬件实现譬如可以采用Frecscale公司的型号为1.Mx31的芯片,通过采集一些核心信号中断线、Cache、内存总线的使用情况等,计算当前的系统负载。 Hardware implementations may be employed for example Frecscale's model 1.Mx31 chip, by collecting a number of core interrupt signal, the Cache, memory bus usage and the like, calculates the current system load.

[0010] 2、根据系统的当前负载,预测系统在下一时间段需要的性能。 [0010] 2, the load current, the system prediction system in the next time period in accordance with the performance required. 有多种预测算法可以选择,要根据具体的应用来决定。 There are many prediction algorithms can be selected, to be determined depending on the application. 这种预测,既可由软件实现,也可由硬件实现。 This prediction, either by the software, can also be implemented in hardware.

[0011] 3、将预测的性能转换成需要的频率,从而调整芯片的时钟设置。 [0011] 3, the predicted performance to the desired switching frequency to adjust the clock of the chip set.

[0012] 4、根据新的频率计算相应的电压。 [0012] 4, is calculated in accordance with a voltage corresponding to the new frequency. 通知电源管理模块调整给CPU的电压。 Notification to the power management module adjusts CPU voltage. 这需要特别的电源管理芯片,比如=Freescale公司的MC13783芯片或者NS公司的支持自适应化能源调整(又称Pow-erWise)特性的系列电源管理芯片,它们能够支持微小的电压调整(25mV)并且能在极短的时间内(几十ys)完成电压的调整。 This requires a special power management chip, such as chip MC13783 = Freescale company or companies NS support adaptive adjustment of energy (known as Pow-erWise) series of power management chip characteristics, they can support a minute voltage regulator (25mV) and energy (tens ys) to complete the adjustment voltage in a very short period of time.

[0013] 在进行本发明研究过程中,发明人发现现有技术至少存在如下问题: [0013] In carrying out the present invention during the study, the inventors found that the prior art has at least the following problems:

[0014] 芯片中的存储器主要由存储单元、行译码单元、列译码单元、时钟电路、灵敏放大器、位线多路选择器构成。 [0014] The memory chip mainly by the storage unit, a row decoding unit, a column decoding unit, a clock circuit, a sense amplifier, the bit line multiplexer configuration. 其中存储单元用于存储数据,每个存储单元可以存放一位二进制数据。 Wherein the storage unit for storing data, each memory cell can store one binary data. 行译码、列译码和位线多路选择器用于在读或写的时候定位某一存储单元。 A row decoder, a column decoder and a bit line multiplexer for positioning a memory cell when reading or writing.

[0015] 其中,存储单元用于存储数据,每个存储单元可以存放一位二进制数据。 [0015] wherein, a storage unit for storing data, each memory cell can store one binary data. 行译码、列译码和位线多路选择器用于在读或写的时候定位某一存储单元;写电路用于把输入的数据在时钟信号的控制下转换成差分形式;灵敏放大器用于把存储单元读出的信号电压放大,加速读的过程。 A row decoder, column decoder and a bit line multiplexer for reading or writing a memory cell when positioned; write circuit for data input into a differential form under the control clock signal; sense amplifier is used to memory unit reads out the signal voltage is amplified acceleration reading. 时钟电路用于整体控制SRAM的读写操作。 A clock circuit for the overall control of the read and write operation of the SRAM.

[0016] 而在现有技术中,应用DVFS技术无法将芯片的工作电压调节到低于本芯片预设的最低工作电压。 [0016] In the prior art, application of DVFS technology can not be adjusted to the chip operating voltage lower than the minimum operating voltage of this chip is preset.

[0017] 作为存储器,最重要的功能是数据存储。 [0017] As the memory, the most important function is data storage. 为了实现存储功能,存储器支持三种基本操作:数据保持,数据写入,数据读出。 In order to implement the storage capability, memory supports three basic operations: holding data, data writing, data reading.

[0018] 而在读操作中,读操作分为三个阶段。 [0018] In the read operation, the read operation is divided into three phases. 第一阶段是译码,包含行译码和列译码。 The first stage is decoded, comprising a row decoder and the column decoder. 在此阶段,位线多路选择器的位线BL与BL_及数据线DL与DL被预充电到VDD。 At this stage, the bit lines BL and BL_ the bit line and the data line DL and the multiplexer DL are precharged to VDD. 译码结束后,存储单元打开,位线BL与BL_上有电压差出现;第二个阶段,即放电阶段开始。 After the decoding, a storage unit is opened with the bit line BL and BL_ voltage difference occurs; the second stage, i.e., the discharge phase begins. 位线多路选择器把位线的电压差传递到DL与DL_上。 The bit line multiplexer to the bit line voltage difference is transmitted to the DL and DL_. 当DL和01^_的电压差Delta DL达到设计值AV ;第三个阶段即将放大输出阶段开始。 When the DL 01 and the voltage difference ^ _ DL reaches the design value of Delta the AV; upcoming third stage amplifier output phase begins. 此时时钟电路触发,产生源同步信号(又称SE信号),连接在DL和DL_末端的灵敏放大器SA被激活,DL和DL_电压差△ DL被放大,存储单元中的二进制数据输出。 At this time, the trigger clock circuit generating a synchronization signal source (also known as signal SE), connected to the end of the DL and DL_ sense amplifier SA is activated, the voltage difference △ DL_ DL and DL is amplified, output binary data storage unit.

[0019] 而灵敏放大器在读操作过程中的工作可以分为两个过程:一是预充电过程,即对位线(Bitline)的寄生电容进行充电,使之恢复到高电平,为下次读写做准备;二是放大过程,即对位线信号进行放大处理,以读取存储单元所存储的数据。 [0019] In the sense amplifier operates during the read operation can be divided into two processes: First, the pre-charging process, i.e., the bit line parasitic capacitance (Bitline) to be charged, so as to restore to the high level for the next read write preparation; the second is the amplification process, i.e., the bit line signal amplifying processing to read data stored in the storage unit. 当工作电压过低时,预充电电流较小,摆率较低,小信号电压增益减少,灵敏放大器的速度较慢,从而降低存储器的读取性能。 When the voltage is too low, the precharge current is small, a lower slew rate reduces the small signal voltage gain, the slow sense amplifier, thereby reducing the performance of the memory is read. 故厂家在进行芯片制作时都为该存储器预设有最低工作电压,即最低电压预设值,以确保该芯片的存储器读操作正常。 Therefore, manufacturers are preset during chip production with a minimum operating voltage for the memory, i.e., the minimum voltage preset value, to ensure that the memory chip is read normal operation.

发明内容 SUMMARY

[0020] 本发明实施例第一目的在于:提供一种动态电压频率调节方法,在确保存储器读操作准确的基础上,可将存储器的工作电压调整到低于预设的最低工作电压,以降低存储器的工作能耗。 [0020] Example embodiments of the present invention, the first object: to provide a dynamic voltage frequency adjustment method, to ensure accurate memory read operations on the basis of the operating voltage of the memory may be adjusted below a preset minimum operating voltage, to reduce the the energy consumption of the working memory.

[0021] 本发明实施例第二目的在于:提供一种动态电压频率调节系统,利用该系统,在确保存储器读操作准确的基础上,可以实现将存储器的工作电压调整到低于预设的最低工作电压,以降低存储器的工作能耗。 The second embodiment purposes of [0021] the present invention is to: provide a dynamic frequency of the voltage regulation system, using the system, to ensure accurate memory read operations based on the operating voltage of the memory can be achieved is adjusted to lower than a preset minimum the operating voltage, to reduce the energy consumption of the working memory.

[0022] 本发明实施例提供的一种动态电压频率调节方法,包括:实时监测存储器的工作电压,获取存储器当前电压、当前负载。 A dynamic voltage and frequency adjustment method according to an embodiment [0022] of the present invention, comprising: a real-time monitoring of the operating voltage of the memory, the current acquisition memory voltage, current load.

[0023] 根据当前负载,计算确定存储器当前所需的工作频率。 [0023] According to the current load, the current is calculated to determine the desired operating frequency of the memory.

[0024] 根据工作频率,确定工作频率对应的目标电压。 [0024] The operating frequency, the operating frequency is determined corresponding to the target voltage.

[0025] 分别比较目标电压、当前电压与存储器的最低电压预设值大小。 [0025] each comparison target voltage, the current value of the preset minimum voltage magnitude of the voltage of the memory.

[0026] 如果目标电压小于或等于最低电压预设值,并且当前电压大于最低电压预设值,则: [0026] If the target voltage is less than or equal to a predetermined minimum voltage value, the voltage and the current voltage is greater than the minimum preset value, then:

[0027] 根据目标电压,确定读操作预留间隙值目标值,以使存储器在目标电压时,存储器的读操作预留时间间隙足够,则:使读操作预留间隙值更新为读操作预留间隙值目标值,将输入至存储器的工作电流的电压调整为目的电压,根据目的电压,调节存储器的读写时钟信号的频率。 [0027] The target voltage, a read operation to determine the target value reserved space, so that the target voltage during a memory read operation of the memory set aside sufficient time gap, then: the read operation updates the value of the reserved space reserved for a read operation gap target value, adjusting the input voltage to the memory operating current for the purpose of voltage, the voltage depending on the purpose, adjusting the frequency of the write clock signal memory.

[0028] 否则,将输入至存储器的工作电流的电压调整为目的电压,根据目的电压,调节存储器的读写时钟信号的频率。 [0028] Otherwise, the input voltage to the memory for the purpose of adjusting the operating current of the voltage, the voltage depending on the purpose, adjusting the frequency of the write clock signal memory.

[0029] 由上可见,应用本实施例技术方案,由于在进行DVFS调节时,如果当前的目的电压小于或等于VDDmin并且当前电压大于VDDmin,则在进行DVFS调节电压以及频率之前,首先调节芯片存储器的RM值,以增大存储器的读操作的预留时间,以保证存储器工作在目标电压时,存储器的读操作的预留时间足够。 [0029] seen from the above, the technical solution of the present application example embodiment, since during DVFS adjustment, if the current object is less than or equal to the voltage and the current voltage is greater than VDDmin VDDmin, the regulated voltage and frequency before performing the DVFS, adjusted first memory chip the RM values, to increase the reserved memory read time to ensure that the target voltage during memory operation, the read operation of the memory set aside sufficient time. 在RM值调节完毕后再进行DVFS调节,动态调节存储器的工作电压以及频率,实现能耗管理。 RM DVFS be adjusted in the adjustment is completed and then dynamically adjusting the operating frequency and voltage of the memory, to achieve energy management. 应用本实施例技术方案能将存储器的工作电压调节至低于存储器的预设最低工作电压下限,并且保证其读操作正常,而不产生工作混舌L。 Application of the operating voltage of the technical solutions of the present embodiment can adjust the memory preset limit below the minimum operating voltage of the memory, and the read operation to ensure its normal, working without generating mixed tongue L.

附图说明 BRIEF DESCRIPTION

[0030] 为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。 [0030] In order to more clearly illustrate the technical solutions in the embodiments or the prior art embodiment of the present invention, briefly introduced hereinafter, embodiments are described below in the accompanying drawings or described in the prior art needed to be used in describing the embodiments the drawings are only some embodiments of the present invention, those of ordinary skill in the art is concerned, without any creative effort, and can obtain other drawings based on these drawings.

[0031]图1为本发明实施例1提供的一种动态电压频率调节方法流程图; [0031] Figure 1 a flowchart of a method for dynamically adjusting the frequency of the voltage provided in Example 1 of the present embodiment of the invention;

[0032]图2为本发明实施例2提供的一种动态电压频率调节方法流程图; [0032] FIG 2 a flowchart of a method for dynamically adjusting the frequency of the voltage provided by the embodiment 2 of the present embodiment of the invention;

[0033]图3为本发明实施例3提供的一种动态电压频率调节方法流程图; [0033] FIG. 3 flowchart of a method for dynamically adjusting the frequency of the voltage provided by the embodiment of Example 3 of the present invention;

[0034] 图4为本发明实施例4提供的一种动态电压频率调节系统结构不意图; [0034] The embodiment of FIG. 4 the frequency of a dynamic voltage regulation system according to Embodiment 4 of the present invention is not intended structure;

[0035]图5为本发明实施例5提供的一种动态电压频率调节系统结构示意图。 [0035] FIG. 5 is a schematic system configuration of a dynamic voltage and frequency regulation provided by the Example 5 of the present embodiment of the invention.

具体实施方式 detailed description

[0036] 下面将结合附图以及具体实施例来详细说明本发明,在此本发明的示意性实施例以及说明用来解释本发明,但并不作为对本发明的限定。 [0036] and the following with reference to specific embodiments of the present invention will be described in detail, in this exemplary embodiment of the present invention serve to explain and illustrate the present invention but are not intended to limit the present invention.

[0037] 实施例1: [0037] Example 1:

[0038] 本实施例提供了一种动态电压频率调节方法,其主要包括以下流程步骤: [0038] The present embodiment provides a dynamic voltage frequency adjustment method, which mainly includes the following process steps:

[0039] 步骤101:实时监测存储器,获取存储器当前电压、当前负载。 [0039] Step 101: Real-time monitoring of the memory, the current acquisition memory voltage, current load.

[0040] 在本实施例中可以但不限于通过负载检测模块实时地检测存储器的工作电压以及负载,实时获取当前电压Vcur、当前负载,并在每监测得到当前电压、当前负载之后分别进行以下的步骤。 [0040] In the present embodiment may be, but is not limited to the detection memory module in real time by the load detecting operating voltage and a load, real-time access current voltage, Vcur, current load, and to obtain the current voltage in each of the monitoring carried out separately after the current load is less step.

[0041] 步骤102:根据当前负载,计算确定存储器当前所需的工作频率。 [0041] Step 102: The current load, calculates the required memory to determine the current operating frequency.

[0042] 根据预定的DVFS调节策略,计算确定负载所需的工作频率Ftar。 [0042] adjusted according to a predetermined strategy DVFS, calculate and determine the desired load operating frequency Ftar.

[0043] 步骤103:根据工作频率,确定工作频率对应的目标电压(记为Vtar)。 [0043] Step 103: according to the operating frequency, the operating frequency is determined corresponding to the target voltage (referred to as Vtar).

[0044] 在本实施例中,可以查询由用户预设的频率电压映射表,确定该工作频率对应的目标电压(记为Vtar),其中在频率电压映射表中预存有:工作频率,并且针对每个工作频率设定有与该工作频率对应的目标电压。 [0044] In the present embodiment, the user may be queried by a predetermined frequency of the voltage map, determining a target voltage corresponding to the operating frequency (Vtar is referred to as a), wherein the frequency of the voltage pre-stored mapping table are: operating frequency, and for each target operating frequency setting voltage corresponding to the operating frequency.

[0045] 步骤104:比较目标准电压(记为Vtar)与存储器的最低电压预设值(记为VDDmin)大小,比较当前电压(记为Vcur)与存储器的最低电压预设值VDDmin的大小。 [0045] Step 104: Compare mesh standard voltage (Vtar is referred to as) the predetermined minimum voltage value memory (referred to as VDDmin) size, comparing the current voltage (referred to as, Vcur) and the minimum size VDDmin preset memory voltage value.

[0046] 步骤105:如果Vtar < = VDDmin并且Vcur > VDDmin,执行步骤106 ;否则,不改变RM值,执行107。 [0046] Step 105: If the Vtar <= VDDmin and Vcur> VDDmin, executing step 106; otherwise, does not change the value of RM is executed 107.

[0047] 步骤106:调节存储器的RM值。 [0047] Step 106: RM adjusted memory.

[0048] 读操作预留间隙值(Read Margin,简称RM)与存储器的读的预留时间可以通过RM值的调节,而调节存储器的读操作的预留时间,使保证存储器的工作电压为目标电压时,存储器的读操作的预留时间足够。 Read the reservation time [0048] space reserved value read (Read Margin, referred to as RM) and the memory may be adjusted by the value RM, the memory read operation is adjusted reservation time, to ensure that the operating voltage of the target memory voltage, a read operation of the memory set aside sufficient time. 即本步骤首先通过调节RM值,提高该存储器的读操作预留时间,以避免在后续在将存储器的工作电压调整到低于目标电压时,该存储器读操作就会失效或者出现错误,导致芯片功能异常。 In this step, i.e., by first adjusting the value of RM, improve the reserve memory read time, to avoid the subsequent working voltage of the memory is adjusted to be lower than the target voltage, the memory read operation will be invalid or an error occurs, leading to the chip dysfunction.

[0049] 在本步骤中存储器的RM值的调节方法可以根据不同存储器的情况确定。 [0049] The method for adjusting the value of the memory RM may be determined in this step according to the situation of different memory.

[0050] 各种厂家的存储器都有RM值的输入配置端口; [0050] Manufacturers of memory has a port input value RM;

[0051] 如Virage公司生产的存储器,其预留的RM值的输入配置端口为:RM[3:0]引脚端口,其RM值配置使能引脚端口为RME,在配置时首先使RM值配置使能引脚使能,从而向RM[3:0]引脚端口输入预定的可保证存储器即使工作在Vtar时能具有足够的读操作预留时间的RM值,在更新存储器的RM值后,存储器的读操作预留时间变大,变为用户想要的读操作预留时间。 [0051] The produced Virage memory, an input port disposed RM reserved for its value: RM [3: 0] port pin, which value RM Enabling the RME port pin, when configured firstly RM enabling the value pin is enabled, so that [3: 0] RM pin to a predetermined input port assured that the memory can even work while having sufficient Vtar read value of the time of reservation RM, RM updating the memory value after the read operation of the memory reservation time becomes large, it becomes the user wants to reserve a read operation time.

[0052] 对于Virage公司生产的存储器的调节存储器的RM值,执行主要如下: [0052] For Virage produced memory RM adjusted memory, performs the main following:

[0053] 当Vtar < = VDDmin并且Vcur > VDDmin时,使存储器引脚RME=I,进行以下的RM值赋值输入操作:RM=4' bOOOO (4位二进制数值0000,该数值为用户根据实验数据分析预定义数值),使存储器即使工作在Vtar时能具有足够的读操作预留时间的RM值。 [0053] When Vtar <= VDDmin and Vcur> VDDmin, so that the memory pin RME = I, the following values ​​of the assigned input operation RM: RM = 4 'bOOOO (4-bit binary value of 0000, the value of the experimental data for the user analysis predefined value), so that the memory can even work while having sufficient Vtar read value RM reserved time.

[0054] TSMC公司生产的存储,其预留的RM值的输入配置端口为:TSEL[1:0]引脚端口,由于该类存储器不支持动态配置,故在进行RM值设定前,首先将访问存储器的时钟门控打开,确保其读写操作不存在,然后向RM值配置使能引脚端口为TSEL[1:0]输入预定的可保证存储器即使工作在Vtar时能具有足够的读操作预留时间的RM值,在更新存储器的RM值后,存储器的读操作预留时间变大,变为用户想要的时间。 [0054] TSMC produced storage, input values ​​which configure the port RM reserved for: TSEL [1: 0] port pin, because such configuration does not support dynamic memory, so the value setting is performed before RM, first the memory access control clock gate is opened, read and write operations to ensure that it does not exist, then the value of RM arranged to enable pin port TSEL [1: 0] can have sufficient Vtar when reading a predetermined input assured that the memory even if the operating operation reservation time value RM, RM after updating the value of the memory, the read operation of the memory reservation time becomes large, it becomes a time desired by the user.

[0055] 步骤107:将输入至存储器的工作电流的电压调整为目的电压。 [0055] Step 107: The input voltage to the memory for the purpose of adjusting the operating current voltage.

[0056] 功耗管理模块在步骤106后即调节存储器的读操作预留时间后,对存储器进行功耗调节,将输入至存储器的工作电流的电压由原来大于目标电压的当前电压调整为目的电压,使其工作电压下降。 Current Voltage Current Voltage adjustment of [0056] the memory power management module after adjustment in step 106 the read operation after the reservation time, the power consumption of the memory is adjusted, inputted to the memory from the original target voltage is greater than the voltage for the purpose of to make it work voltage drop.

[0057] 具体的电压调整方法可以但不限于根据现有技术实现。 [0057] DETAILED voltage adjusting method may, but not limited to implementation according to the prior art.

[0058] 步骤108:调节存储器的工作频率,使该存储器的工作频率等于步骤102中确定的工作频率。 [0058] Step 108: adjusting the operating frequency of the memory, so that the operating frequency of the memory is determined in step 102 is equal to the operating frequency.

[0059] 按照预定的DVFS调节策略,复位存储器的控制时钟,即按照目的电压对应的工作频率进行相应的分频,将存储器的工作频率调节为该目的电压对应的工作频率Ftar。 [0059] adjusted according to a predetermined strategy DVFS control clock, resetting the memory, i.e., dividing the corresponding voltage corresponding to the object according to the operating frequency, the operating frequency of the memory for the purpose of adjusting the operating frequency corresponding to the voltage Ftar.

[0060] 由上可见,应用本实施例技术方案,由于在进行DVFS调节时,如果当前的目的电压小于或等于VDDmin并且当前电压大于VDDmin,则在进行DVFS调节电压以及频率之前,首先调节芯片存储器的RM值,以增大存储器的读操作的预留时间,以保证存储器工作在目标电压时,存储器的读操作的预留时间足够。 [0060] seen from the above, the technical solution of the present application example embodiment, since during DVFS adjustment, if the current object is less than or equal to the voltage and the current voltage is greater than VDDmin VDDmin, the regulated voltage and frequency before performing the DVFS, adjusted first memory chip the RM values, to increase the reserved memory read time to ensure that the target voltage during memory operation, the read operation of the memory set aside sufficient time. 在RM值调节完毕后再进行DVFS调节,动态调节存储器的工作电压以及频率,实现能耗管理。 RM DVFS be adjusted in the adjustment is completed and then dynamically adjusting the operating frequency and voltage of the memory, to achieve energy management. 应用本实施例技术方案能将存储器的工作电压调节至低于存储器的预设最低工作电压下限,并且保证其读操作正常,而不产生工作混舌L。 Application of the operating voltage of the technical solutions of the present embodiment can adjust the memory preset limit below the minimum operating voltage of the memory, and the read operation to ensure its normal, working without generating mixed tongue L.

[0061] 实施例2: [0061] Example 2:

[0062] 参见图2所示,本实施例提供的一种动态电压频率调节方法,其与实施例1所不同之处主要在于: [0062] Referring to FIG. 2, the frequency adjustment method of a dynamic voltage according to an embodiment, which differs from the Example 1 embodiment mainly in that:

[0063] 在步骤104比较之后,当比较结果在步骤105中为否时,在步骤107之前,还包括步骤201、202: [0063] After the comparison step 104, when the comparison result is negative, prior to step 107, further comprising the step of 201, 202 in step 105:

[0064] 步骤201:如果Vtar > VDDmin并且Vcur < VDDmin,执行步骤202 ;否则,不调节RM值,执行步骤107。 [0064] Step 201: If the Vtar> VDDmin and Vcur <VDDmin, executing step 202; otherwise, not adjusted RM value, the step 107.

[0065] 如果当前电压低于存储器的预设电压最小值下限VDDmin,则应用本实施例的方法,在上一次的DVFS调节过程中,在将工作电压调节到低于VDDmin之前,已经调节RM值,使存储器的读操作预留时间比默认的预留时间增大。 [0065] If this voltage is lower than the preset minimum limit VDDmin voltage of the memory, the application of the method according to the present embodiment, in the last DVFS adjustment process, before the operating voltage is adjusted to less than VDDmin, has been adjusted value RM the reserved memory read time is increased than the default reservation time.

[0066] 步骤202:将存储器的读操作预留间隙值设定为厂家推荐值。 [0066] Step 202: the read operation of the memory space reserved value is set to a value recommended by the manufacturer. 然后执行步骤107。 Step 107 is then performed.

[0067] 如果判定为当前电压小于VDDmin,而目标电压大于VDDmin,则在本步骤中将存储器的RM值调节会厂家推荐值,即RM默认值。 [0067] If it is determined that the current voltage is less than VDDmin, VDDmin greater than the target voltage, then the RM will be adjusted to the manufacturer's recommended value memory in the present step, i.e. the default value RM. 从而在确保其DVFS调节的符合用户需求的基础上,进一步确保存储器的工作效率、工作速度。 Thereby ensuring the basis of its adjustable DVFS meet the needs of the user, to further ensure the efficiency of the memory, operation speed.

[0068] 由上可见,应用本实施例技术方案,其相对于实施例1的进一步有益效果在于:其除了可以在DVFS调节中将存储器的工作电压调整到低于预设最低电压下限之外,还进一步在当前电压小于VDDmin,而欲调至的目的电压大于VDDmin时,还可以将其RM值会调至RM预设值,而使在确保DVFS调节达到用户预设效果基础上,使存储器的共组特别是读操作具有较高的速度以及效率,使存储器具有较高的综合工作性能。 [0068] seen from the above, the technical solutions of the present embodiment applied with respect to the further advantageous effect of Example 1 in that: it is adjusted to below a predetermined minimum voltage limit can be adjusted in the addition to the memory in the DVFS operating voltage, further when the current voltage is less than VDDmin, and wish VDDmin adjusted voltage is greater than the object, it may be further adjusted value RM RM preset value, ensuring the DVFS adjusted to achieve predetermined effect based on the user, so that the memory particular total group read operation having a higher speed and efficiency of the memory having a higher overall performance.

[0069] 实施例3: [0069] Example 3:

[0070] 参见图3所示,本实施例提供的一种动态电压频率调节方法,其与实施例2所不同之处主要包括: [0070] Referring to FIG. 3, a dynamic voltage frequency scaling method provided in the present embodiment, which embodiment is different from Embodiment 2 mainly comprises:

[0071] 在步骤105确定需要调节存储器的RM值之后,到步骤106执行存储器的RM值调节之前,还进一步包括以下的步骤301-303: After the [0071] RM value needs to be adjusted is determined in step 105 a memory, 106 prior to performing the step of adjusting the value of the memory RM, further comprising the steps of 301-303:

[0072] 步骤301:检测存储器当前是否处于工作状态。 [0072] Step 301: detecting whether the memory is currently in operation.

[0073] 在本步骤中,可以通过检测存储器用于提供进行读写操作的时钟信号的读写时钟的门控状态,通过判定该门控当前处于打开状态还是闭合状态,而判定该存储器当前是否处于工作状态。 [0073] In this step, it can be used for gating a clock signal to provide status of read and write operations of a memory read clock by detecting, by determining the gating current in the open state or the closed state, and determines whether the memory is currently in working condition.

[0074] 步骤302:如果存储器当前处于非工作状态,则执行步骤303,否则执行步骤106。 [0074] Step 302: If the memory is currently in non-operating state, step 303 is performed, otherwise step 106 is performed.

[0075] 如果该门控当前处于关闭状态,则可判定该存储器当前处于读写工作状态,则执行步骤303 ;如果该门控处于打开状态,则可判定该存储器当前处于非工作状态;直接执行步骤106,调节存储器的RM值 [0075] If the current is gated off, it may be determined that the read-write memory is currently in operational state, step 303 is executed; if the control gate is open, it may be determined that the memory is currently in non-operation state; direct execution step 106, adjusting the value of the memory RM

[0076] 步骤303:控制存储器,使存储器停止工作状态。 [0076] Step 303: the control memory, so the memory-off state.

[0077] 在本步骤中,可以打开存储器的时钟门控,使存储器停止工作状态,在确保存储器当前处于非工作状态后,跳转执行步骤106,调节存储器的RM值。 [0077] In this step, the clock gating open the memory so that the memory state is stopped, in that memory is currently in the non-operating state, jump to step 106, the adjustment value memory RM.

[0078] 另外,在步骤201确定调节存储器的RM值之后,在步骤202将存储器的RM值调节回预设值之前,还进一步包括以下的步骤304-306: Before [0078] Further, after the memory 201 to determine the adjusted RM step, in step 202 the value of the memory RM is adjusted back to the default value, further comprising the steps of 304-306:

[0079] 步骤304:检测存储器当前是否处于工作状态。 [0079] Step 304: detecting whether the memory is currently in operation.

[0080] 与步骤301同理。 [0080] Similarly in step 301.

[0081] 步骤305:如果存储器当前处于非工作状态,则执行步骤306,否则执行步骤108。 [0081] Step 305: If the memory is currently in non-operating state, step 306 is performed, otherwise step 108 is performed.

[0082] 如果该门控当前处于关闭状态,则可判定该存储器当前处于读写工作状态,则执行步骤306 ;如果该门控处于打开状态,则可判定该存储器当前处于非工作状态;直接执行步骤202,调节存储器的RM值。 [0082] If the current is gated off, it may be determined that the read-write memory is currently in operational state, step 306 is executed; if the control gate is open, it may be determined that the memory is currently in non-operation state; direct execution step 202, the adjustment value memory RM.

[0083] 步骤306:控制存储器,使存储器停止工作状态。 [0083] Step 306: the control memory, so the memory-off state.

[0084] 在本步骤中,可以打开存储器的时钟门控,使存储器停止工作状态,在确保存储器当前处于非工作状态后,跳转执行步骤202,调节存储器的RM值。 [0084] In this step, the clock gating open the memory so that the memory state is stopped, in that memory is currently in the non-operating state, jump to step 202, the adjustment value memory RM.

[0085] 由上可见,应用本实施例技术方案,可以使本实施例技术方案除了适用于支持在读写工作状态时动态调节RM值的存储器之外,还进一步支持可以应用在不支持在读写工作状态时动态调节RM值的存储器,即本实施例技术方案适用于各种存储器。 [0085] seen from the above technical solution of the present application example embodiment, the present embodiment can be made in addition to the technical solutions adapted to support dynamic adjustment value RM memory during read and write operation state, but also can be applied to further support does not support read RM dynamic adjustment value memory write operation state, i.e. the technical scheme of the present embodiment is suitable for a variety of memory.

[0086] 实施例4: [0086] Example 4:

[0087] 图4提供了一种动态电压频率调节系统400,其主要包括:工作负载检测单元401、频率计算单元402、目标电压确定单元403、比较单元404、读操作预留间隙值目标值确定单元405、控制单元406、读操作预留间隙值更改单元407、功耗管理单元408、频率调整单元409。 [0087] Figure 4 provides a dynamic frequency of the voltage regulation system 400, which includes: a workload detection unit 401, the frequency calculation unit 402, the target voltage determination unit 403, comparison unit 404, the read operation target value determined space reserved unit 405, control unit 406, a read operation space reserved value changing unit 407, power management unit 408, the frequency adjustment unit 409. 各部分的连接关系以及工作原理蛀牙如下: And connecting relation of each part of tooth decay works as follows:

[0088] 工作负载检测单元401,与被DVFS调节的存储器100电连接,用于实时监测存储器100的工作电压,获取存储器100当前电压(记为Vcur)、当前负载。 [0088] workload detection unit 401, to be electrically connected to a memory 100 DVFS adjusted for real-time monitoring the operating voltage of the memory 100, acquires the current voltage of the memory 100 (referred to as, Vcur), the current load. 具体工作原理可以但不限于参考步骤101中的记载。 Specific works can be but is not limited to the described with reference to step 101.

[0089] 频率计算单元402,与工作负载检测单元401电连接,用于根据当前负载,计算确定存储器100当前所需的工作频率。 [0089] The frequency calculation unit 402, electrically connected to the work load detection unit 401, according to current load, the memory 100 is calculated to determine the desired operating frequency of the current. 频率计算单元402根据负载确定当前负载所需要的工作频率Ftar,可以根浴预定的DVFS调节策略确定。 Frequency calculation unit 402 determines the load current required by the load according to the operating frequency Ftar be adjusted DVFS root bath predetermined policy determination.

[0090] 目标电压确定单元403,与频率计算单元402、工作负载检测单元401电连接,用于根据工作频率Ftar以及当前负载,确定工作频率Ftar对应的目标电压(记为Vtar)其中,在本实施例中,某些目标电压可以但不限于低于该存储器100的最低电压预设值。 [0090] The target voltage determination unit 403, unit 402, the workload detection unit 401 is electrically connected to the frequency is calculated according to the operating frequency Ftar and current load, determining a target voltage corresponding to the operating frequency Ftar (Vtar is referred to as a) wherein, in the present embodiment, certain target voltage may be but is not limited to a predetermined value lower than the minimum voltage of the memory 100.

[0091] 在本实施例系统400中还可以在系统400中设定一存储单元410,在该存储单元410中预存有频率电压映射表,在频率电压映射表中预存有:工作频率Ftar、以及各工作频率Ftar对应的目标电压,其中,在本实施例中,某些目标电压可以但不限于低于该存储器100的最低电压预设值。 [0091] The storage unit may also be set in a system 400 in the present embodiment of the system 400 410, there is a frequency voltage stored in the mapping table storage unit 410, the frequency of the voltage pre-stored mapping table are: Ftar operating frequency, and Ftar working frequency corresponding to the target voltage, wherein, in the present embodiment, the target voltage may be some, but not limited to a predetermined value lower than the minimum voltage of the memory 100.

[0092] 这样目标电压确定单元403可以通过查询存储单元410中的频率电压映射表,确定上述的工作频率。 [0092] so that the target voltage determination unit 403 may frequency-voltage in the mapping table storage unit 410 by querying, determining such operating frequency.

[0093] 比较单元404,与工作负载检测单元401、目标电压确定单元403分别电连接,用于比较目标电压Vtar与存储器100的最低电压预设值VDDmin大小,比较当前电压Vcur与最低电压预设值VDDmin大小,并将比较结果输入至控制单元406,以便控制单元406根据该比较结果,确定是否需要调节RM值,以及执行对其他单元的控制。 [0093] The comparison unit 404, 401, the target voltage determination unit 403 are electrically connected to the work load detection unit 100 for the lowest voltage of a preset value VDDmin Vtar magnitude comparison target voltage and the memory, compares the current voltage Vcur with a preset minimum voltage VDDmin size value, and the comparison result is input to the control unit 406 to control unit 406 based on the comparison result, determines whether to adjust the value of the RM, and performs other control units.

[0094] 读操作预留间隙值目标值确定单元405,与比较单元404、控制单元406分别电连接,用于在控制单元406的控制下,根据目标电压Vtar,确定以该目标电压对应的RM值目标值,以确保存储器100在目标电压Vtar时,存储器100的读操作预留时间间隙足够。 [0094] The read operation space reserved target value determination unit 405, the comparison unit 404, the control unit 406 are electrically connected, under control of the control unit 406, based on target voltage Vtar is, to determine the target voltage corresponding to RM when the target value, to ensure that the target voltage Vtar is a memory 100, a read operation of the memory 100 reserved for sufficient time gap.

[0095] 在本实施例中可以但不限于参见实施例1所示,当满足条件1:Vtar < = VDDmin并且Vcur > VDDmin时,根据目标电压Vtar确定可以确保存储器100读操作具有足够的读操作预留时间的RM值; [0095] In the present embodiment may be, but is not limited to the embodiment see Example 1, when the condition 1: When Vtar <= VDDmin and Vcur> VDDmin, determination may be based on target voltage Vtar that memory 100 has a sufficient read read RM value of the reservation time;

[0096] 进一步地,在不满足条件I的基础上,即可以不改变RM值,由控制单元406直接预定的DVFS调节策略,指示功耗管理单元408将存储器100的工作电压调节为目的电压;由频率调整单元409对存储器100的工作时钟进行复位、分频调整,以将存储器100的工作频率调节为频率确定单元确定的工作频率。 [0096] Further, on the basis of the condition I is not satisfied, i.e., may not change the value of RM, the control unit 406 by a predetermined DVFS direct regulation strategy, power management unit 408 indicate the operating voltage of the memory 100 for the purpose of voltage regulation; clock frequency adjustment is performed by unit 409 of the memory 100 is reset, the frequency division adjustments to the operating frequency of the memory 100 is adjusted to the frequency determining unit determines the operating frequency.

[0097] 或者进一步地,在不满足条件I的基础上,还可以如实施例2所示地,进一步判定是否满足条件2 =Vtar > VDDmin并且Vcur < VDDmin,如果满足条件2,则将厂家预设值(SPRM值默认值)作为RM值目标值,以指示读操作预留间隙值更改单元407将当前的RM值更为该RM值默认值;否则不更改RM值,由控制单元406直接预定的DVFS调节策略,指示功耗管理单元408将存储器100的工作电压调节为目的电压;由频率调整单元409对存储器100的工作时钟进行复位、分频调整,以将存储器100的工作频率调节为频率确定单元确定的工作频率。 [0097] or more, on the basis of the condition I is not satisfied, may also be implemented as shown in two cases, it is further determined whether the condition 2 = Vtar> VDDmin and Vcur <VDDmin, if the condition 2, then the factory pre set value (default value of the SPRM value) as the target value RM, the reserved space to indicate a read operation unit 407 to change the value of the current value of more RM RM value of the default value; RM or not to change the value predetermined by the control unit 406 directly the regulation strategy DVFS, power management unit 408 indicate the operating voltage of the memory 100 for the purpose of regulating voltage; reset by the clock frequency adjustment unit 409 of the memory 100, the frequency division adjustments to the operating frequency of the memory 100 is adjusted to the frequency determination means determines the operating frequency.

[0098] 读操作预留间隙值更改单元407,用于在控制单元406控制下,将存储器100的RM值更改为RM目标值。 [0098] Read operation unit 407 to change the value of the reserved space, for under control of the control unit 406, changes the value of the memory RM RM 100 is a target value. 具体RM值的更改技术方案可以但不限于参见实施例106的记载。 Change the value of RM particular aspect may refer to but are not limited to the embodiment described in Example 106.

[0099] 控制单元406,与本实施例中的读操作预留间隙值更改单元407、功耗管理单元408、频率调整单元409分别电连接,作为本实施例系统400的主控装置,控制各个单元的工作。 [0099] control unit 406, space reserved value changing unit 407 of the present embodiment a read operation, power management unit 408, the frequency adjustment unit 409 are electrically connected to a master device according to the present embodiment of the system 400, controls the respective unit of work.

[0100] 功耗管理单元408,用于在控制单元406控制下,将输入至存储器100的工作电流的电压调整为目的电压。 [0100] Power management unit 408 for under control of the control unit 406, the input voltage to adjust an operating current for the purpose of voltage of the memory 100. 其电压调节技术方案可以但不限于参考现有技术。 The voltage regulator which can be but is not limited to the technical solutions with reference to the prior art.

[0101] 频率调整单元409,用于在控制单元406控制下,调节存储器100的工作频率,使其工作频率为频率计算单元402确定的工作频率Ftar。 [0101] frequency adjusting unit 409, configured under control of the control unit 406, adjusting the operating frequency of the memory 100, so that the operating frequency of the frequency calculation unit 402 determines the operating frequency Ftar. 频率调整单元409的调频处理具体可以是复位存储器100的工作时钟,使其工作时钟重新进行分频,输出频率为Ftar的新的工作频率信号,作为存储器100新的读写时钟信号。 FM frequency adjustment processing unit 409 may be a particular work memory 100 to reset the clock, it re-dividing the operation clock, the output frequency of the frequency signal Ftar new job, the new memory 100 as a write clock signal.

[0102] 由上可见,应用本实施例技术方案,由于在本实施例中还设置有比较单元404、读操作预留间隙值目标值确定单元405、读操作预留间隙值更改单元407,故在实施时,可以根据存储器100当前电压Vcur、目标电压Vtar分别于存储器100的最低电压预设值VDDmin(厂家预设)的大小比较结果,而在当前电压Vcur高于VDDmin,而目标电压Vtar低于或者等于VDDmin时,在进行对存储器100的工作电压以及工作频率调节(VDFS调节)之前,首先通过读操作预留间隙值目标值确定单元405、读操作预留间隙值更改单元407将存储器100的RM值调节为RM目标值,确保当存储器100工作在目的电压时,其读操作预留时间增长,可以保证其读操作预留时间足够而保证存储器100的读写操作正常而不引起混乱。 [0102] seen from the above, the technical solution of the present application example embodiment, since the present embodiment is also provided with a comparison unit 404, the read operation space reserved target value determination unit 405, the read operation space reserved value changing unit 407, so in practice, the lowest voltage can be respectively preset size VDDmin comparison result values ​​(factory preset) memory 100 according to the current voltage Vcur 100, the target voltage Vtar memory, and the current is higher than the voltage Vcur VDDmin, while low target voltage Vtar before determining unit is equal to or VDDmin when, during the working voltage of the memory 100 and adjusting the operating frequency (VDFS adjustment), the target value is first reserved space 405 by the read operation, the read operation space reserved memory unit 407 changes the value 100 RM RM was adjusted to the target value, the memory 100 operates to ensure that when the voltage at the object, which is reserved for the read operation time increases, the read operation can be guaranteed reserve time enough to guarantee the normal read and write operations of memory 100 without causing confusion. 故应用本实施例技术方案能将存储器100的工作电压调节至低于存储器100的预设最低工作电压下限,并且保证其读操作正常,而不产生工作混乱。 Therefore, the technical solution of applying the present embodiment can work memory 100 is adjusted to a voltage below a predetermined minimum operating voltage lower limit of the memory 100, and read operations to ensure its normal, working without generating confusion.

[0103] 实施例5: [0103] Example 5:

[0104] 参见图5所示,本实施例动态电压频率调节系统500与实施例4所不同之处主要包括: [0104] Referring to Figure 5, for example, dynamic voltage frequency control system of the present embodiment 4 differs from the embodiment including Example 500:

[0105] 存储器工作状态检测单元501,与控制单元406以及被调节的存储器400分别电连接,用于在控制单元406控制下,检测所述存储器的工作状态,并向控制单元406反馈检测结果; [0105] The memory operation state detecting means 501, the control unit 406 and a memory 400 are adjusted electrically connected, for the control of the control unit 406 detects the operating state of the memory, and the control unit 406 a detection result of the feedback;

[0106] 存储器工作状态控制单元502,与控制单元406以及被调节的存储器400分别电连接,用于在控制单元406控制下,停止所述存储器的工作。 [0106] The memory control unit 502 working state, the control unit 406 and a memory 400 are adjusted electrically connected, for the control of the control unit 406, the memory operation is stopped.

[0107] 在本实施例系统500中,控制单元406在根据比较单元的比较结果确定电压比较结果满足实施例4所示的条件1,或者满足实施例4中所示条件2后,在控制单元406指示读操作预留间隙值更改单元更改存储器的RM值(将其设为预定的RM值目标值(可以为原厂家推荐的RM预设值或者由操作预留间隙值目标值确定单元重新确定的RM值目标值)之前,进一步控制单元406指示存储器工作状态检测单元501检测存储器当前是否处于工作状态,如果是,则控制单元406进一步指示存储器工作状态控制单元502工作,存储器工作状态控制单元502停止所述存储器的工作;否则,控制单元406控制读操作预留间隙值目标值确定单元、读操作预留间隙值更改单元、功耗管理单元、频率调整单元进行相应的处理。 [0107] In the present embodiment of the system 500, control unit 406 after the voltage is determined based on a comparison result of the comparison result of the comparison unit satisfies the condition 1 shown in Example 4 or Example 4 satisfies the condition shown in embodiment 2, the control unit RM 406 indicates a value read value change unit changes the reserved space in memory (which is set to a predetermined target value RM (recommended for the RM the original factory preset values ​​or target value by the operation determination unit space reserved redetermined RM before the target value), the control unit 406 instructs the memory further work state detection unit 501 detects whether the memory is currently in operation, if it is, the memory unit 406 further indicates the operating state control unit 502 controls the work, the working state of the memory control unit 502 stopping the working memory; otherwise, the control unit 406 controls the read operation space reserved target value determination unit, a read operation space reserved value changing unit, power management unit, the frequency adjustment unit corresponding processing.

[0108] 由上可见,应用本实施例技术方案,由于本实施例还设置有存储器工作状态检测单元501、存储器工作状态控制单元502,故可以在确保该存储器处于非工作状态时才进行RM值的更改,故本实施例技术方案除了适用于支持在读写工作状态时动态调节RM值的存储器之外,还进一步可以扩展到不支持在读写工作状态时动态调节RM值的存储器,即本实施例技术方案适用于各种存储器。 [0108] seen from the above, the technical solution of the present application example embodiment, since the present embodiment is also provided with a working memory state detection unit 501, the memory control unit 502 working state, it is possible to ensure that the memory is in non-operating state when the value for RM changes, the technical solutions adapted to support dynamic adjustment in addition to the memory RM values ​​when read or written state, but also further be extended to the RM does not support dynamic adjustment value when the operating state of the read-write memory, i.e., so the present embodiment embodiments applied to various memory embodiment. 其应用范围更广。 A wider range of applications.

[0109] 以上所描述的装置实施例仅仅是示意性的,其中所述作为分离部件说明的单元可以是或者也可以不是物理上分开的,作为单元显示的部件可以是或者也可以不是物理单元,即可以位于一个地方,或者也可以分布到多个网络单元上。 Example [0109] The apparatus described above is merely exemplary, as a unit wherein the separate parts may be or may not be physically separate, parts displayed as units may be or may not be physical units, i.e., it may be located in one place, or may be distributed to multiple network units. 可以根据实际的需要选择其中的部分或者全部模块来实现本实施例方案的目的。 You can select some or all of the modules according to actual needs to achieve the object of the solutions of the embodiments. 本领域普通技术人员在不付出创造性的劳动的情况下,即可以理解并实施。 Those of ordinary skill in the art in the case without creative labor, i.e., can be understood and implemented.

[0110] 通过以上的实施方式的描述,本领域的技术人员可以清楚地了解到各实施方式可借助软件加必需的通用硬件平台的方式来实现,当然也可以通过硬件。 [0110] By the above described embodiments, those skilled in the art may clearly understand that the embodiments may be implemented by software plus a necessary universal hardware platform, also be implemented by hardware. 基于这样的理解,上述技术方案本质上或者说对现有技术做出贡献的部分可以以软件产品的形式体现出来,该计算机软件产品可以存储在计算机可读存储介质中,如R0M/RAM、磁碟、光盘等,包括若干指令用以使得一台计算机设备(可以是个人计算机,服务器,或者网络设备等)执行各个实施例或者实施例的某些部分所述的方法。 Based on such understanding, the technical solutions of the above or the part contributing to the prior art may be embodied in a software product out of the computer software product may be stored in a computer-readable storage medium, such as a R0M / RAM, magnetic disk, optical disk, etc., some parts of the various method embodiments or embodiment includes a plurality of instruction execution to enable a computer device (may be a personal computer, a server, or network device).

[0111] 以上所述的实施方式,并不构成对该技术方案保护范围的限定。 Embodiment [0111] above, do not limit the scope of protection of the technical solution. 任何在上述实施方式的精神和原则之内所作的修改、等同替换和改进等,均应包含在该技术方案的保护范围之内。 Any modifications within the spirit and principle of the above embodiments, equivalent alterations and modifications all fall within the scope of protection of the technical solution.

Claims (9)

  1. 1.一种动态电压频率调节方法,其特征在于,包括: 实时监测存储器的工作电压,获取所述存储器当前电压和当前负载; 根据所述当前负载,计算确定所述存储器当前所需的工作频率; 根据所述工作频率,确定所述工作频率对应的目标电压; 分别比较所述目标电压、所述当前电压与所述存储器的最低电压预设值大小; 如果所述目标电压小于或等于所述最低电压预设值,并且所述当前电压大于所述最低电压预设值,则: 根据所述目标电压,确定所述存储器的读操作预留间隙值目标值,以使所述存储器在所述目标电压时,所述存储器的读操作预留时间间隙足够,则: 使所述存储器的读操作预留间隙值更新为所述读操作预留间隙值目标值, 将输入至所述存储器的工作电流的电压调整为所述目标电压, 根据所述目标电压,调节所述存储器的读写时钟信号 CLAIMS 1. A dynamic voltage frequency adjusting method characterized by comprising: a real-time monitoring of the operating voltage of the memory, the memory acquiring current voltage and current load; according to the current load, the required current is calculated to determine the operating frequency of the memory ; according to the operating frequency, determining a target voltage corresponding to the operating frequency; preset minimum voltage magnitude respectively comparing the target voltage, the voltage and current of the memory; if the target voltage is less than or equal to the preset minimum voltage, the current and voltage is greater than the minimum voltage of the predetermined value, then: according to the target voltage, determining the memory space reserved read operation target value, so that the memory of the when the target voltage, a read operation of the memory reservation time sufficient clearance is: the read operation of the memory space reserved for the updated value of the read operation space reserved target value, the input to the work memory the voltage adjusting the current to the target voltage, the target voltage according to the adjusted read clock signal of said memory 频率为所述目标电压对应的工作频率;否则, 将输入至所述存储器的工作电流的电压调整为所述目标电压, 根据所述目标电压,调节所述存储器的读写时钟信号的频率。 The target voltage corresponding to a frequency of the operating frequency; otherwise, the input current to the operating voltage of the memory is adjusted to the target voltage according to the target voltage, adjusting the frequency of said write clock signal memory.
  2. 2.根据权利要求1所述的动态电压频率调节方法,其特征在于,包括: 根据所述工作频率,确定所述工作频率对应的目标电压;具体为: 根据所述工作频率,查询预存的频率电压映射表,确定当前所述存储器正常工作所需的工作频率, 在所述频率电压映射表中预存有:工作频率、各所述工作频率对应的目标电压。 The dynamic voltage and frequency regulation method according to claim 1, further comprising: according to the operating frequency, determining a target voltage corresponding to the operating frequency; specifically as follows: according to the operating frequency, the frequency of the query stored voltage map, determining a current required for normal operation of the memory operating frequency, the frequency of the voltage pre-stored mapping table are: operating frequency, the operating frequency of the respective corresponding target voltage.
  3. 3.根据权利要求1所述的动态电压频率调节方法,其特征在于, 在分别比较所述目标电压、所述当前电压与所述存储器的最低电压预设值大小之后, 在将输入至所述存储器的工作电流的电压调整为所述目标电压之前,还包括: 如果所述目标电压大于所述最低电压预设值,并且,所述当前电压小于所述最低电压预设值,则: 将所述存储器的读操作预留间隙值设定为厂家推荐值。 The dynamic voltage and frequency regulation method according to claim 1, wherein, in comparing the respective target voltage, then the current value of the minimum voltage preset voltage and the size of the memory, the input to the before the voltage adjustment current memory as the target voltage, further comprising: if the target voltage is greater than the minimum voltage of the predetermined value, and the voltage is less than the current minimum voltage preset value, then: the said memory read operation is set to the value of the space reserved value recommended by the manufacturer.
  4. 4.根据权利要求1或2或3所述的动态电压频率调节方法,其特征在于, 在根据所述目标电压确定所述存储器的读操作预留间隙值目标值之后,在根据所述目标电压确定并重设所述读操作预留间隙值之前,还包括: 确定所述存储器当前是否处于读写工作状态,如果是,则控制所述存储器,停止所述存储器的工作状态。 The dynamic voltage and frequency regulation method of claim 1 or 2 or as claimed in claim 3, characterized in that the space reserved in the target value determined according to the memory read operation after the target voltage, the target voltage in accordance with determining both the read operation is provided prior to the reserved space value, further comprising: determining whether the memory is currently being accessed working condition, if so, controlling the memory, the memory-off state.
  5. 5.根据权利要求4所述的动态电压频率调节方法,其特征在于, 确定所述存储器当前是否处于读写工作状态,具体是: 检测所述存储器的读写时钟的门控信号,判定所述存储器的时钟门控当前处于打开状态还是闭合状态, 如果所述时钟门控当前处于闭合状态,则判定所述存储器处于读写工作状态;如果所述时钟门控当前处于打开状态,则判定所述存储器处于非工作状态; 控制所述存储器,停止所述存储器的工作状态,具体是: 打开所述时钟门控,使所述存储器停止工作状态。 The dynamic voltage and frequency regulation method according to claim 4, wherein, determining whether the memory is currently being accessed operating state, in particular: a gating signal for detecting the memory write clock determines the memory gate control clock is currently in the open state or the closed state, if the clock gating current in the closed state, it is determined that the memory is read or written state; if the clock gating is currently open, it is determined that the non-operation state in the memory; controlling the memory, the memory is stopped operating state, in particular: opening said gating clock, the memory-off state.
  6. 6.根据权利要求1或2或3所述的动态电压频率调节方法,其特征在于, 所述读操作预留间隙值目标值固定为:4位二进制数值0000。 The dynamic voltage and frequency regulation method of claim 1 or 2 or as claimed in claim 3, wherein said read operation target value is fixed to the reserved space: 4-bit binary value 0000.
  7. 7.—种动态电压频率调节系统,其特征在于,包括: 工作负载检测单元,用于实时监测存储器的工作电压,获取所述存储器当前电压和当前负载; 频率计算单元,用于根据所述当前负载,计算确定所述存储器当前所需的工作频率; 目标电压确定单元,用于根据所述工作频率,确定所述工作频率对应的目标电压; 比较单元,用于比较所述目标电压与所述存储器的最低电压预设值大小,比较所述当前电压与所述最低电压预设值大小; 读操作预留间隙值目标值确定单元,用于根据所述目标电压,确定所述存储器的读操作预留间隙值目标值,以使所述存储器在所述目标电压时,所述存储器的读操作预留时间间隙足够; 控制单元,用于控制读操作预留间隙值更改单元、功耗管理单元、频率调整单元;读操作预留间隙值更改单元,用于在所述控制单元控制下 7.- type of dynamic voltage and frequency regulation system, characterized by comprising: a load detection unit of work, for real-time monitoring the operating voltage of the memory, obtaining the current memory load voltage and current; frequency calculation unit, according to the current load calculation required for determining the current operating frequency of the memory; target voltage determination means according to the operating frequency, the operating frequency is determined corresponding to a target voltage; a comparison unit for comparing the target voltage and the minimum voltage preset size of the memory, comparing the current voltage value with the predetermined minimum voltage magnitude; read gap reserving the target value determination unit, according to the target voltage, the memory read operation is determined space reserved target value, so that the target voltage when the memory read operation of the memory set aside sufficient time gap; and a control unit for controlling the operation of reading the reserved space value changing unit, power management unit the frequency adjustment unit; read space reserved value changing unit, for control in the control unit 更改所述存储器的读操作预留间隙值,所述读操作预留间隙值更新为:所述读操作预留间隙值目标值或者厂家推荐值; 功耗管理单元,用于在所述控制单元控制下,将输入至所述存储器的工作电流的电压调整为所述目标电压; 频率调整单元,用于根据所述目标电压,调节所述存储器的读写时钟信号的频率为所述目标电压对应的工作频率。 Altering the read operation of memory space reserved value, the read operation space reserved value is updated to: read the space reserved target value or recommended value of the manufacturer; power management unit for the control unit under the control of the voltage adjustment input to the current memory as the target voltage; frequency adjusting means according to the target voltage for adjusting the frequency of said write clock signal for said memory corresponding to the target voltage the operating frequency.
  8. 8.根据权利要求7所述的一种动态电压频率调节系统,其特征在于,包括: 存储单元,在所述存储单元中预存有频率电压映射表,在所述频率电压映射表中预存有:工作频率、各所述工作频率对应的目标电压; 所述目标电压确定单元为查询单元,用于查询所述频率电压映射表,确定所述工作频率。 According to claim frequency of a dynamic voltage regulation system of claim 7, further comprising: a storage unit stored in the storage unit mapping table with a frequency of the voltage, the frequency of the voltage pre-stored mapping table are: the operating frequency, the operating frequency of the respective corresponding target voltage; the target voltage determination unit is a querying unit configured to query the frequency of the voltage map, determining the operating frequency.
  9. 9.根据权利要求7或8所述的一种动态电压频率调节系统,其特征在于,包括: 存储器工作状态检测单元,用于在所述控制单元控制下,检测所述存储器当前是否处于工作状态; 存储器工作状态控制单元,用于在所述控制单元控制下,停止所述存储器的工作。 A dynamic frequency of the voltage regulation system according to claim 7 or 8, characterized by comprising: a memory operating state detecting means for under control of said control unit, detecting whether the memory is currently in a working state ; memory operating state control unit, in said control unit for controlling, stopping the work memory.
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