CN103426453B - Dynamic voltage frequency control method and system - Google Patents
Dynamic voltage frequency control method and system Download PDFInfo
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Abstract
The present invention relates to the communications field, disclose a kind of dynamic voltage frequency control method and system.Method comprises: the operating voltage of Real-Time Monitoring storer, calculates and determines the current required frequency of operation of storer, and the target voltage that this frequency is corresponding.The minimum voltage preset value size of comparison object voltage, current voltage and storer respectively.According to target voltage, determine read operation preset clearance value desired value, make storer when target voltage, the read operation of storer gap of setting aside some time is enough.System comprises: operating load detecting unit, frequency computation part unit, target voltage determining unit, comparing unit, read operation preset clearance value desired value determining unit, control module, read operation preset clearance value changing unit, power management unit, frequency adjustment unit.Adopt this programme, guaranteeing memory read operation accurately on basis, the operating voltage of storer can being adjusted to the minimum operating voltage lower than presetting, to reduce the operating power consumption of storer.
Description
Technical field
The present invention relates to the communications field, particularly a kind of dynamic voltage frequency control method and system.
Background technology
Along with the raising of frequency of operation and the development of semiconductor technology, the power problems of chip has become the important Consideration of in dark sub-Nanometer integrated circuit one, dynamic voltage frequency regulates (DynamicVoltageFrequencyscaling, be called for short DVFS) be the current a kind of dynamic voltage frequency regulation technology be widely adopted at semiconductor applications, DVFS technology specifically at the running frequency of dynamic adjustments chip and voltage (for same chip, frequency is higher, required voltage is also higher), thus reach energy-conservation object.
DVFS technical know-how mainly with following formula function (1), (2) for theoretical foundation:
P=aCV
2F（1）；
E=P*t=aCV
2F*t（2）；
Wherein P is operating load (power), and a is constant; C is load capacitance; V is operating voltage; F is frequency, and t is the time, and E is the energy that the required by task of an execution duration t will expend.
As can be seen from formula function (1) above, (2), reduce frequency and can reduce power, but merely reducing frequency can not save energy.Because for a given task, F*t is a constant, only low-frequencyly reduces voltage falling simultaneously, low-energy consumption could be fallen veritably.
The workflow of typical DVFS technology is as follows:
1, gather the signal relevant with system load, calculate current system load.This process can use software simulating, also can use hardware implementing.Software simulating is generally in the core of operating system is called, lay hook, particularly scheduler, judges the load of system according to its frequency called.Hardware implementing for example can adopt the model of Frecscale company to be the chip of i.Mx31, by gathering the service condition etc. of some core signal interrupt lines, Cache, rambus, calculates current system load.
2, according to the present load of system, the performance that prognoses system needs at subsequent time period.There is multiple prediction algorithm to select, will decide according to concrete application.This prediction, both can by software simulating, also can by hardware implementing.
3, the performance of prediction is converted to the frequency of needs, thus the clock setting of adjustment chip.
4, according to the corresponding voltage of new frequency computation part.Notice power management module adjusts to the voltage of CPU.This needs special power management chip, such as: the series of power managing chip of the MC13783 chip of Freescale company or support self-adaptation energy adjustment (also known as Pow-erWise) characteristic of NS company, they can be supported small Voltage Cortrol (25mV) and within the extremely short time, (tens μ s) can complete the adjustment of voltage.
Carrying out in research process of the present invention, inventor finds prior art, and at least there are the following problems:
Storer in chip is formed primarily of storage unit, row decoding unit, column decoding unit, clock circuit, sense amplifier, bit line MUX.Wherein storage unit is for storing data, and each storage unit can deposit a bit binary data.Row decoding, column decoding and bit line MUX are used for locating a certain storage unit when reading or writing.
Wherein, storage unit is for storing data, and each storage unit can deposit a bit binary data.Row decoding, column decoding and bit line MUX are used for locating a certain storage unit when reading or writing; Write circuit is used for the data of input to convert difference form under control of the clock signal; The signal voltage that sense amplifier is used for storage unit to read amplifies, and adds the process of fast reading.Clock circuit is used for the read-write operation of overall control SRAM.
And in the prior art, the operating voltage of chip cannot be adjusted to the minimum operating voltage preset lower than this chip by application DVFS technology.
As storer, most important function is that data store.In order to realize memory function, three kinds of basic operations supported by storer: data keep, and data write, data reading.
And in read operation, read operation is divided into three phases.First stage is decoding, comprises row decoding and column decoding.In this stage, bit line BL and BL_ and data line DL and the DL of bit line MUX are precharged to VDD.After decoding terminates, storage unit is opened, and bit line BL and BL_ has voltage difference to occur; Second stage, namely discharge regime starts.Bit line MUX is delivered to the voltage difference of bit line on DL and DL_.When the voltage difference DeltaDL of DL and DL_ reaches design load Δ V; Three phases starts by amplifying the output stage.Now clock circuit triggers, and produce source synchronizing signal (also known as SE signal), the sense amplifier SA being connected to DL and DL_ end is activated, DL and DL_ voltage difference delta DL is exaggerated, and the binary data in storage unit exports.
And the work of sense amplifier in read operation process can be divided into two processes: one is pre-charge process, namely the stray capacitance of pairs of bit line (Bitline) is charged, and makes it to return to high level, for read-write next time is prepared; Two is amplification process, and namely pairs of bit line signal carries out amplification process, the data stored with reading cells.When operating voltage is too low, pre-charge current is less, and Slew Rate is lower, and small signal gain reduces, and the speed of sense amplifier is comparatively slow, thus reduces the reading performance of storer.Therefore producer is all this storer when carrying out chip manufacturing is preset with minimum operating voltage, i.e. minimum voltage preset value, normal to guarantee the memory read operation of this chip.
Summary of the invention
The embodiment of the present invention first object is: provide a kind of dynamic voltage frequency control method, guaranteeing memory read operation accurately on basis, the operating voltage of storer can being adjusted to the minimum operating voltage lower than presetting, to reduce the operating power consumption of storer.
The embodiment of the present invention second object is: provide a kind of dynamic voltage frequency regulating system, utilize this system, guaranteeing memory read operation accurately on basis, can realizing the operating voltage of storer being adjusted to the minimum operating voltage lower than presetting, to reduce the operating power consumption of storer.
A kind of dynamic voltage frequency control method that the embodiment of the present invention provides, comprising: the operating voltage of Real-Time Monitoring storer, obtains storer current voltage, present load.
According to present load, calculate and determine the current required frequency of operation of storer.
According to frequency of operation, determine the target voltage that frequency of operation is corresponding.
The minimum voltage preset value size of comparison object voltage, current voltage and storer respectively.
If target voltage is less than or equal to minimum voltage preset value, and current voltage is greater than minimum voltage preset value, then:
According to target voltage, determine read operation preset clearance value desired value, to make storer when target voltage, the read operation of storer gap of setting aside some time is enough, then: make read operation preset clearance value be updated to read operation preset clearance value desired value, by input to the working current of storer Voltage Cortrol for the purpose of voltage, according to object voltage, regulate the frequency of the read-write clock signal of storer.
Otherwise, by input to the working current of storer Voltage Cortrol for the purpose of voltage, according to object voltage, regulate the frequency of the read-write clock signal of storer.
Therefore, application the present embodiment technical scheme, due to when carrying out DVFS and regulating, if current object voltage is less than or equal to VDDmin and current voltage is greater than VDDmin, then before carrying out DVFS regulation voltage and frequency, first regulate the RM value of chip memory, to increase setting aside some time of the read operation of storer, to ensure that memory operation is when target voltage, setting aside some time of the read operation of storer is enough.After RM value regulates, carry out DVFS adjustment again, the operating voltage of dynamic adjustments storer and frequency, realize managing power consumption.The operating voltage of storer can be adjusted to the default minimum minium operation voltage lower than storer by application the present embodiment technical scheme, and ensures that its read operation is normal, and does not produce work confusion.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
A kind of dynamic voltage frequency control method process flow diagram that Fig. 1 provides for the embodiment of the present invention 1;
A kind of dynamic voltage frequency control method process flow diagram that Fig. 2 provides for the embodiment of the present invention 2;
A kind of dynamic voltage frequency control method process flow diagram that Fig. 3 provides for the embodiment of the present invention 3;
A kind of dynamic voltage frequency regulating system structural representation that Fig. 4 provides for the embodiment of the present invention 4;
A kind of dynamic voltage frequency regulating system structural representation that Fig. 5 provides for the embodiment of the present invention 5.
Embodiment
Describe the present invention in detail below in conjunction with accompanying drawing and specific embodiment, be used for explaining the present invention in this illustrative examples of the present invention and explanation, but not as a limitation of the invention.
Embodiment 1:
Present embodiments provide a kind of dynamic voltage frequency control method, it mainly comprises following process step:
Step 101: Real-Time Monitoring storer, obtains storer current voltage, present load.
Can be, but not limited to the operating voltage and the load that are detected storer by load detecting module in real time in the present embodiment, Real-time Obtaining current voltage Vcur, present load, and often monitoring obtain current voltage, present load after carry out following step respectively.
Step 102: according to present load, calculates and determines the current required frequency of operation of storer.
According to predetermined DVFS regulation strategy, calculate the frequency of operation Ftar determined needed for load.
Step 103: according to frequency of operation, determines the target voltage (being designated as Vtar) that frequency of operation is corresponding.
In the present embodiment, can inquire about by the voltage to frequency mapping table of user preset, determine the target voltage (being designated as Vtar) that this frequency of operation is corresponding, wherein prestore in voltage to frequency mapping table: frequency of operation, and be set with the target voltage corresponding with this frequency of operation for each frequency of operation.
Step 104: the accurate voltage of comparison object (being designated as Vtar) and minimum voltage preset value (the being designated as VDDmin) size of storer, compares the size of the minimum voltage preset value VDDmin of current voltage (being designated as Vcur) and storer.
Step 105: if Vtar <=VDDmin and Vcur > VDDmin, performs step 106; Otherwise, do not change RM value, perform 107.
Step 106: the RM value regulating storer.
Read operation preset clearance value (ReadMargin, be called for short RM) with storer read set aside some time can by the adjustment of RM value, and regulating setting aside some time of the read operation of storer, when making the operating voltage of guarantee storer be target voltage, setting aside some time of the read operation of storer is enough.Namely this step is first by regulating RM value, the read operation improving this storer is set aside some time, to avoid follow-up when adjusting to the operating voltage of storer lower than target voltage, this memory read operation will lose efficacy or occur mistake, caused chip functions abnormal.
The control method of the RM value of storer can be determined according to the situation of different memory in this step.
The storer of various producer has the input configuration port of RM value;
As the storer that Virage company produces, the input configuration port of its reserved RM value is: RM [3:0] pin port, its RM value configuration enable pin port is RME, first RM value is made to configure enable pin when configuring enable, thus to RM [3:0] even if pin port input predetermined ensured storer can have the RM value that enough read operations are set aside some time when being operated in Vtar, after the RM value of more new memory, the read operation of storer is set aside some time and is become large, becomes the read operation that user wants and sets aside some time.
For the RM value of the adjustment storer of the storer of Virage company production, perform main as follows:
As Vtar <=VDDmin and Vcur > VDDmin time, make storer pin RME=1, carry out following RM value assignment input operation: RM=4 ' b0000(4 bit binary value 0000, this numerical value is user's experimentally data analysis predefine numerical value), even if the RM value that enough read operations set aside some time can be had when making storer be operated in Vtar.
The storage that TSMC company produces, the input configuration port of its reserved RM value is: TSEL [1:0] pin port, because such storer does not support dynamic-configuration, therefore before carrying out the setting of RM value, first the Clock gating of access storer is opened, guarantee that its read-write operation does not exist, then be TSEL [1:0] even if input the RM value that to have enough read operations when predetermined ensured storer is operated in Vtar and set aside some time to RM value configuration enable pin port, after the RM value of more new memory, the read operation of storer is set aside some time and is become large, become the time that user wants.
Step 107: by input to the working current of storer Voltage Cortrol for the purpose of voltage.
After namely power managed module regulates the read operation of storer to set aside some time after the step 106, regulating power consumption is carried out to storer, the voltage inputing to the working current of storer is adjusted to object voltage by the current voltage being originally greater than target voltage, its operating voltage is declined.
Concrete voltage adjusting method can be, but not limited to according to existing techniques in realizing.
Step 108: the frequency of operation regulating storer, makes the frequency of operation of this storer equal the frequency of operation determined in step 102.
According to predetermined DVFS regulation strategy, the control clock of reset storer, namely carries out corresponding frequency division according to the frequency of operation that object voltage is corresponding, the frequency of operation of storer is adjusted to frequency of operation Ftar corresponding to this object voltage.
Therefore, application the present embodiment technical scheme, due to when carrying out DVFS and regulating, if current object voltage is less than or equal to VDDmin and current voltage is greater than VDDmin, then before carrying out DVFS regulation voltage and frequency, first regulate the RM value of chip memory, to increase setting aside some time of the read operation of storer, to ensure that memory operation is when target voltage, setting aside some time of the read operation of storer is enough.After RM value regulates, carry out DVFS adjustment again, the operating voltage of dynamic adjustments storer and frequency, realize managing power consumption.The operating voltage of storer can be adjusted to the default minimum minium operation voltage lower than storer by application the present embodiment technical scheme, and ensures that its read operation is normal, and does not produce work confusion.
Embodiment 2:
Shown in Figure 2, a kind of dynamic voltage frequency control method that the present embodiment provides, itself and embodiment 1 difference are mainly:
After step 104 is relatively, when comparative result is no in step 105, before step 107, also comprise step 201,202:
Step 201: if Vtar > VDDmin and Vcur < VDDmin, performs step 202; Otherwise, do not regulate RM value, perform step 107.
If current voltage is lower than the predeterminated voltage minimum value lower limit VDDmin of storer, then apply the method for the present embodiment, in upper DVFS adjustment process once, before operating voltage is adjusted to lower than VDDmin, regulate RM value, the read operation of storer is set aside some time than the increase of setting aside some time of acquiescence.
Step 202: the read operation preset clearance value of storer is set as manufacturer's recommended value.Then step 107 is performed.
If it is determined that for current voltage is less than VDDmin, and target voltage is greater than VDDmin, then the RM value of storer is regulated meeting manufacturer's recommended value in this step, i.e. RM default value.Thus meet on the basis of user's request what guarantee that its DVFS regulates, guarantee the work efficiency of storer, operating rate further.
Therefore, application the present embodiment technical scheme, it is relative to the further beneficial effect of embodiment 1: it except adjusting to lower than except default minimum voltage lower limit by the operating voltage of storer in DVFS regulates, also be less than VDDmin at current voltage further, and the object voltage for being adjusted to is when being greater than VDDmin, its RM value can also be adjusted to RM preset value, and make guaranteeing that DVFS adjustment reaches on user preset effect basis, make common group of storer particularly read operation there is higher speed and efficiency, storer is made to have higher synthetic operation performance.
Embodiment 3:
Shown in Figure 3, a kind of dynamic voltage frequency control method that the present embodiment provides, itself and embodiment 2 differences mainly comprise:
After step 105 determines to need to regulate the RM value of storer, to step 106 execute store the adjustment of RM value before, also comprise the following steps 301-303 further:
Step 301: detect storer current whether in running order.
In this step, by detecting storer for providing the gating state of the read-write clock of the clock signal of carrying out read-write operation, open mode or closure state can be in by judging that this gate is current, and judge whether this storer is current in running order.
Step 302: if storer is current be in off working state, then perform step 303, otherwise perform step 106.
If this gate is current be in closed condition, then can judges that this storer is current and be in reading writing working state, then perform step 303; If this gate is in open mode, then can judges that this storer is current and be in off working state; Direct execution step 106, regulates the RM value of storer
Step 303: control store, makes storer quit work state.
In this step, can open the Clock gating of storer, storer is quit work state, after guaranteeing that storer is current and being in off working state, redirect performs step 106, regulates the RM value of storer.
In addition, after step 201 determines the RM value of adjustment storer, before the RM value of storer is regulated back preset value by step 202, also 304-306 is comprised the following steps further:
Step 304: detect storer current whether in running order.
With step 301 in like manner.
Step 305: if storer is current be in off working state, then perform step 306, otherwise perform step 108.
If this gate is current be in closed condition, then can judges that this storer is current and be in reading writing working state, then perform step 306; If this gate is in open mode, then can judges that this storer is current and be in off working state; Direct execution step 202, regulates the RM value of storer.
Step 306: control store, makes storer quit work state.
In this step, can open the Clock gating of storer, storer is quit work state, after guaranteeing that storer is current and being in off working state, redirect performs step 202, regulates the RM value of storer.
Therefore, application the present embodiment technical scheme, when can make the present embodiment technical scheme except being applicable to be supported in reading writing working state dynamic adjustments RM value storer except, also support the storer that can be applied in dynamic adjustments RM value when not being supported in reading writing working state further, namely the present embodiment technical scheme is applicable to various storer.
Embodiment 4:
Fig. 4 provides a kind of dynamic voltage frequency regulating system 400, and it mainly comprises: operating load detecting unit 401, frequency computation part unit 402, target voltage determining unit 403, comparing unit 404, read operation preset clearance value desired value determining unit 405, control module 406, read operation preset clearance value changing unit 407, power management unit 408, frequency adjustment unit 409.The annexation of each several part and principle of work decay tooth as follows:
Operating load detecting unit 401, is electrically connected with the storer 100 regulated by DVFS, for the operating voltage of Real-Time Monitoring storer 100, obtains storer 100 current voltage (being designated as Vcur), present load.Specific works principle can be, but not limited to the record in refer step 101.
Frequency computation part unit 402, is electrically connected with operating load detecting unit 401, for according to present load, calculates and determines the current required frequency of operation of storer 100.The frequency of operation Ftar of frequency computation part unit 402 required for load determination present load, can bathe predetermined DVFS regulation strategy and determines by root.
Target voltage determining unit 403, be electrically connected with frequency computation part unit 402, operating load detecting unit 401, for according to frequency of operation Ftar and present load, determine that target voltage (being designated as Vtar) that frequency of operation Ftar is corresponding wherein, in the present embodiment, some target voltage can be, but not limited to the minimum voltage preset value lower than this storer 100.
A storage unit 410 can also be set in system 400 in the present embodiment system 400, voltage to frequency mapping table is prestored in this storage unit 410, prestore in voltage to frequency mapping table: the target voltage that frequency of operation Ftar and each frequency of operation Ftar is corresponding, wherein, in the present embodiment, some target voltage can be, but not limited to the minimum voltage preset value lower than this storer 100.
Such target voltage determining unit 403 by the voltage to frequency mapping table in inquiry storage unit 410, can determine above-mentioned frequency of operation.
Comparing unit 404, be electrically connected respectively with operating load detecting unit 401, target voltage determining unit 403, for the minimum voltage preset value VDDmin size of comparison object voltage Vtar and storer 100, relatively current voltage Vcur and minimum voltage preset value VDDmin size, and comparative result is inputed to control module 406, so that control module 406 is according to this comparative result, determines whether to need to regulate RM value, and perform the control to other unit.
Read operation preset clearance value desired value determining unit 405, be electrically connected respectively with comparing unit 404, control module 406, for under the control of control module 406, according to target voltage Vtar, determine with RM value desired value corresponding to this target voltage, to guarantee that storer 100 is when target voltage Vtar, the read operation of storer 100 gap of setting aside some time is enough.
Can be, but not limited to see shown in embodiment 1 in the present embodiment, when satisfy condition 1:Vtar <=VDDmin and Vcur > VDDmin time, determine to guarantee according to target voltage Vtar the RM value that storer 100 read operation has enough read operations and sets aside some time;
Further, do not satisfying condition on the basis of 1, namely can not change RM value, the DVFS regulation strategy directly predetermined by control module 406, the operating voltage of storer 100 is adjusted to object voltage by instruction power management unit 408; Resetted by the work clock of frequency adjustment unit 409 pairs of storeies 100, frequency division adjustment, the frequency of operation of storer 100 to be adjusted to the frequency of operation that frequency determinative elements is determined.
Or further, do not satisfying condition on the basis of 1, can also as described in Example 2, determine whether to satisfy condition 2:Vtar > VDDmin and Vcur < VDDmin further, if satisfied condition 2, then using factory pre-sets value (i.e. RM value default value) as RM value desired value, to indicate read operation preset clearance value changing unit 407 by current RM value more this RM value default value; Otherwise do not change RM value, the DVFS regulation strategy directly predetermined by control module 406, the operating voltage of storer 100 is adjusted to object voltage by instruction power management unit 408; Resetted by the work clock of frequency adjustment unit 409 pairs of storeies 100, frequency division adjustment, the frequency of operation of storer 100 to be adjusted to the frequency of operation that frequency determinative elements is determined.
Read operation preset clearance value changing unit 407, under controlling at control module 406, changes to RM desired value by the RM value of storer 100.The change technical scheme of concrete RM value can be, but not limited to the record see embodiment 106.
Control module 406, is electrically connected respectively with the read operation preset clearance value changing unit 407 in the present embodiment, power management unit 408, frequency adjustment unit 409, as the master control set of the present embodiment system 400, controls the work of unit.
Power management unit 408, under controlling at control module 406, by input to the working current of storer 100 Voltage Cortrol for the purpose of voltage.Its voltage regulation techniques scheme can be, but not limited to reference to prior art.
Frequency adjustment unit 409, under controlling at control module 406, regulates the frequency of operation of storer 100, makes its frequency of operation be the frequency of operation Ftar that frequency computation part unit 402 is determined.The frequency modulation process of frequency adjustment unit 409 can be specifically the work clock of reset storer 100, makes its work clock re-start frequency division, and output frequency is the new service frequency signal of Ftar, as the read-write clock signal that storer 100 is new.
Therefore, application the present embodiment technical scheme, owing to being also provided with comparing unit 404 in the present embodiment, read operation preset clearance value desired value determining unit 405, read operation preset clearance value changing unit 407, therefore when implementing, can according to storer 100 current voltage Vcur, target voltage Vtar is respectively at the minimum voltage preset value VDDmin(factory pre-sets of storer 100) size comparative result, and at current voltage Vcur higher than VDDmin, and target voltage Vtar lower than or when equaling VDDmin, before carrying out that (VDFS adjustment) is regulated to the operating voltage of storer 100 and frequency of operation, first by read operation preset clearance value desired value determining unit 405, the RM value of storer 100 is adjusted to RM desired value by read operation preset clearance value changing unit 407, guarantee when storer 100 is operated in object voltage, its read operation is set aside some time growth, can ensure that its read operation is set aside some time enough and ensures that the read-write operation of storer 100 normally and not causes confusion.Therefore the operating voltage of storer 100 can be adjusted to the default minimum minium operation voltage lower than storer 100 by application the present embodiment technical scheme, and ensure that its read operation is normal, and do not produce work confusion.
Embodiment 5:
Shown in Figure 5, the present embodiment dynamic voltage frequency regulating system 500 and embodiment 4 differences mainly comprise:
Memory operation state detection unit 501, is electrically connected respectively with control module 406 and the storer 400 that is conditioned, under controlling at control module 406, detects the duty of described storer, and feeds back testing result to control module 406;
Memory operation status unit 502, is electrically connected respectively with control module 406 and the storer 400 that is conditioned, under controlling at control module 406, stops the work of described storer.
In the present embodiment system 500, control module 406 meets the condition 1 shown in embodiment 4 in the comparative result determination voltage compare result according to comparing unit, or after meeting condition 2 shown in embodiment 4, read operation preset clearance value changing unit is indicated to change the RM value of storer (before being set to predetermined RM value desired value (the RM preset value can recommended for genuine man or the RM value desired value redefined by operation preset clearance value desired value determining unit) at control module 406, whether further control module 406 instruction memory working state detection units 501 detects storer current in running order, if, then the further instruction memory working state control unit 502 of control module 406 works, memory operation status unit 502 stops the work of described storer, otherwise control module 406 controls read operation preset clearance value desired value determining unit, read operation preset clearance value changing unit, power management unit, frequency adjustment unit process accordingly.
Therefore, application the present embodiment technical scheme, because the present embodiment is also provided with memory operation state detection unit 501, memory operation status unit 502, therefore the change of RM value just can be carried out when guaranteeing that this storer is in off working state, therefore the present embodiment technical scheme except being applicable to be supported in reading writing working state time dynamic adjustments RM value storer except, also can expand to the storer of dynamic adjustments RM value when not being supported in reading writing working state further, namely the present embodiment technical scheme is applicable to various storer.Its range of application is wider.
Device embodiment described above is only schematic, the wherein said unit illustrated as separating component or can may not be and physically separates, parts as unit display can be or may not be physical location, namely can be positioned at a place, or also can be distributed in multiple network element.Some or all of module wherein can be selected according to the actual needs to realize the object of the present embodiment scheme.Those of ordinary skill in the art, when not paying performing creative labour, are namely appreciated that and implement.
Through the above description of the embodiments, those skilled in the art can be well understood to the mode that each embodiment can add required general hardware platform by software and realize, and can certainly pass through hardware.Based on such understanding, technique scheme can embody with the form of software product the part that prior art contributes in essence in other words, this computer software product can store in a computer-readable storage medium, as ROM/RAM, magnetic disc, CD etc., comprising some instructions in order to make a computer equipment (can be personal computer, server, or the network equipment etc.) perform the method described in some part of each embodiment or embodiment.
Above-described embodiment, does not form the restriction to this technical scheme protection domain.The amendment done within any spirit at above-mentioned embodiment and principle, equivalently to replace and improvement etc., within the protection domain that all should be included in this technical scheme.
Claims (9)
1. a dynamic voltage frequency control method, is characterized in that, comprising:
The operating voltage of Real-Time Monitoring storer, obtains described storer current voltage and present load;
According to described present load, calculate and determine the current required frequency of operation of described storer;
According to described frequency of operation, determine the target voltage that described frequency of operation is corresponding;
The minimum voltage preset value size of more described target voltage, described current voltage and described storer respectively;
If described target voltage is less than or equal to described minimum voltage preset value, and described current voltage is greater than described minimum voltage preset value, then:
According to described target voltage, determine the read operation preset clearance value desired value of described storer, to make described storer when described target voltage, the read operation of described storer gap of setting aside some time is enough, then:
The read operation preset clearance value of described storer is made to be updated to described read operation preset clearance value desired value,
Be described target voltage by the Voltage Cortrol inputing to the working current of described storer,
According to described target voltage, the frequency of the read-write clock signal of described storer is regulated to be the frequency of operation that described target voltage is corresponding; Otherwise,
Be described target voltage by the Voltage Cortrol inputing to the working current of described storer,
According to described target voltage, regulate the frequency of the read-write clock signal of described storer.
2. dynamic voltage frequency control method according to claim 1, is characterized in that, comprising:
According to described frequency of operation, determine the target voltage that described frequency of operation is corresponding; Be specially:
According to described frequency of operation, inquire about the voltage to frequency mapping table that prestores, determine that current described storer normally works required frequency of operation,
Prestore in described voltage to frequency mapping table: the target voltage that frequency of operation, each described frequency of operation are corresponding.
3. dynamic voltage frequency control method according to claim 1, is characterized in that,
After the minimum voltage preset value size of more described target voltage, described current voltage and described storer respectively,
Before the Voltage Cortrol of the working current by inputing to described storer is described target voltage, also comprise:
If described target voltage is greater than described minimum voltage preset value, and described current voltage is less than described minimum voltage preset value, then:
The read operation preset clearance value of described storer is set as manufacturer's recommended value.
4. the dynamic voltage frequency control method according to claim 1 or 2 or 3, is characterized in that,
After the read operation preset clearance value desired value determining described storer according to described target voltage, determining according to described target voltage and before reseting described read operation preset clearance value, also comprising:
Determine that described storer is current and whether be in reading writing working state, if so, then control described storer, stop the duty of described storer.
5. dynamic voltage frequency control method according to claim 4, is characterized in that,
Determine that described storer is current and whether be in reading writing working state, specifically:
Detect the gate-control signal of the read-write clock of described storer, judge that the Clock gating of described storer is current and be in open mode or closure state,
If described Clock gating is current be in closure state, then judge that described storer is in reading writing working state; If described Clock gating is current be in open mode, then judge that described storer is in off working state;
Control described storer, stop the duty of described storer, specifically:
Open described Clock gating, described storer is quit work state.
6. the dynamic voltage frequency control method according to claim 1 or 2 or 3, is characterized in that,
Described read operation preset clearance value desired value is fixed as: 4 bit binary value 0000.
7. a dynamic voltage frequency regulating system, is characterized in that, comprising:
Operating load detecting unit, for the operating voltage of Real-Time Monitoring storer, obtains described storer current voltage and present load;
Frequency computation part unit, for according to described present load, calculates and determines the current required frequency of operation of described storer;
Target voltage determining unit, for according to described frequency of operation, determines the target voltage that described frequency of operation is corresponding;
Comparing unit, for the minimum voltage preset value size of more described target voltage and described storer, more described current voltage and described minimum voltage preset value size;
Read operation preset clearance value desired value determining unit, for according to described target voltage, determines the read operation preset clearance value desired value of described storer, and to make described storer when described target voltage, the read operation of described storer gap of setting aside some time is enough;
Control module, for controlling read operation preset clearance value changing unit, power management unit, frequency adjustment unit;
Read operation preset clearance value changing unit, under controlling at described control module, change the read operation preset clearance value of described storer, described read operation preset clearance value is updated to: described read operation preset clearance value desired value or manufacturer's recommended value;
The Voltage Cortrol inputing to the working current of described storer, under controlling at described control module, is described target voltage by power management unit;
Frequency adjustment unit, for according to described target voltage, regulates the frequency of the read-write clock signal of described storer to be the frequency of operation that described target voltage is corresponding.
8. a kind of dynamic voltage frequency regulating system according to claim 7, is characterized in that, comprising:
Storage unit, prestores voltage to frequency mapping table in described storage unit, prestores in described voltage to frequency mapping table: the target voltage that frequency of operation, each described frequency of operation are corresponding;
Described target voltage determining unit is query unit, for inquiring about described voltage to frequency mapping table, determines described frequency of operation.
9. a kind of dynamic voltage frequency regulating system according to claim 7 or 8, is characterized in that, comprising:
Memory operation state detection unit, under controlling at described control module, detects described storer current whether in running order;
Memory operation status unit, under controlling at described control module, stops the work of described storer.
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| CN105518563B (en) * | 2014-12-12 | 2017-02-22 | 上海兆芯集成电路有限公司 | Dynamic voltage frequency scaling system and associated method |
| KR20180076840A (en) | 2016-12-28 | 2018-07-06 | 삼성전자주식회사 | Application processor performing dynamic voltage and frequency scaling operation, computing system including the same, and operation method of thereof |
| CN109725700A (en) * | 2017-10-29 | 2019-05-07 | 上海寒武纪信息科技有限公司 | Dynamic voltage adjustment frequency modulation device and method |
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| CN114880124A (en) * | 2018-06-06 | 2022-08-09 | 北京嘉楠捷思信息技术有限公司 | Chip frequency modulation method and device of computing equipment, computing force board, computing equipment and storage medium |
| CN109086130B (en) | 2018-06-06 | 2022-06-10 | 北京嘉楠捷思信息技术有限公司 | Chip frequency modulation method and device of computing equipment, computing force board, computing equipment and storage medium |
| US10515670B1 (en) * | 2018-06-13 | 2019-12-24 | Nanya Technology Corporation | Memory apparatus and voltage control method thereof |
| CN112639675B (en) * | 2018-10-15 | 2023-10-20 | 华为技术有限公司 | Method for dynamically modulating frequency of internal memory and electronic equipment |
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