CN103420375B - Dummy bar is utilized to manufacture the device and method of polysilicon based on electron beam melting - Google Patents
Dummy bar is utilized to manufacture the device and method of polysilicon based on electron beam melting Download PDFInfo
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- CN103420375B CN103420375B CN201210158930.0A CN201210158930A CN103420375B CN 103420375 B CN103420375 B CN 103420375B CN 201210158930 A CN201210158930 A CN 201210158930A CN 103420375 B CN103420375 B CN 103420375B
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Abstract
The disclosure provides a kind of and utilizes dummy bar as starting block to improve the high-purity polycrystalline silicon manufacturing method and apparatus of silicon refining efficiency.Described device comprises: vacuum chamber; First gun and the second electron beam gun, be arranged in the upside of vacuum chamber, thus by electron beam irradiation in described vacuum chamber; Silicon melting unit, is placed on the first electron beam irradiation region corresponding with first gun, and dusty raw materials silicon is fed into this silicon melting unit and by the first electron beam melting; And unidirectional solidification unit, be placed on the second electron beam irradiation region corresponding with the second electron beam gun.Starting block is provided with in unidirectional solidification unit, along driving this starting block in downward direction, so that along transmitting described molten silicon in downward direction, and the bottom of unidirectional solidification unit is formed with cooling channel, molten silicon is made to be solidified from the bottom of described molten silicon to top and to cast.Here, starting block comprises dummy bar, and this dummy bar has to be buckled with the silicon of the upper bond of this dummy bar.
Description
Technical field
The present invention relates to a kind of manufacturing technology of polysilicon, in more detail, relate to a kind of method and apparatus manufacturing polysilicon based on electron beam melting use dummy bar, thus improve silicon refining efficiency.
Background technology
The purity of silicon represents with 2N, 3N, 6N, 11N etc. usually.Here, in the numeral weight percent (wt%) before ' N ' 9 number, such as 2N represents the purity of 99%, and 6N represents the purity of 99.9999%, and 11N represents the purity of 99.999999999%.
Semiconductor grade silicon needs the ultra-high purity reaching 11N.But, as known in the art, as photovoltaic cell starting material and there is the silicon of the purity of relatively low 5N ~ 7N, the light conversion efficiency approximate with the high purity silicon with 11N is provided.
Semiconductor grade silicon is produced by chemical gasification process.But this silicon production process, except production cost height, also produces a large amount of pollution substances and production efficiency is low.
Therefore, described silicon production process is unsuitable for the semiconductor grade silicon producing the raw material being used as photovoltaic cell, and has made great efforts energetically to have attempted developing the metallurgical refining process that can realize the batch production of high purity silicon by low cost.
The example producing the metallurgical refining process of the high purity silicon being used for photovoltaic cell comprises: vacuum refining process, wet puddling process, oxidising process, unidirectional solidification refining process etc.A part in these refining processs is now by commercialization.
Particularly, based on the silicon manufacturing technology of the such as Metal Melting such as vacuum refinement and unidirectional solidification refining, because its Characteristics Control is easy, and in advantages such as the pollution caused by impurity are in operation few, therefore energetically these technology are studied.
Here, vacuum refining process is by feed metal melting and from the metal of melting, removes the process of boiling point and the vapour pressure impurity lower than silicon, unidirectional solidification refining process be at silicon from liquid to the phase transition process of solid, make impurity along the process of interface movement between solid and liquid (segregation).
Summary of the invention
The invention provides and a kind ofly utilize dummy bar to manufacture the device of highly purified polysilicon based on electron beam melting, to improve silicon refining efficiency.
The present invention also provides a kind of and utilizes dummy bar to manufacture the method for highly purified polysilicon based on electron beam melting, and the method can make the removal efficiency of metallic impurity maximize by controlling described dummy bar.
According to an aspect of the present invention, a kind of poly plant, comprising: vacuum chamber; First gun and the second electron beam gun, be arranged in the upside of described vacuum chamber, thus by electron beam irradiation in described vacuum chamber; Silicon melting unit, is placed on the first electron beam irradiation region corresponding with described first gun, and dusty raw materials silicon is fed into this silicon melting unit and by described first electron beam melting; And unidirectional solidification unit, be placed on the second electron beam irradiation region corresponding with the second electron beam gun, starting block (start block) is provided with in described unidirectional solidification unit, along driving this starting block in downward direction, so that along transmitting described molten silicon in downward direction, and the bottom of described unidirectional solidification unit is formed with cooling channel, described molten silicon is made to solidify from the bottom of described molten silicon to top and be cast, described starting block comprises dummy bar, and this dummy bar has to be buckled with the silicon of the upper bond of this dummy bar.
According to another aspect of the present invention, a kind of method for manufacturing polycrystalline silicon, comprising: dusty raw materials silicon is supplied to silicon melting unit, and by carrying out the raw silicon that melting supplies to described raw silicon irradiating electron beam; Raw silicon described in sustainable supply and melting, makes molten silicon overflow from described silicon melting unit; The described molten silicon overflowed from described silicon melting unit is received by unidirectional solidification unit, by driving the starting block with silicon materials along transmitting described molten silicon in downward direction, then from the bottom of described molten silicon to top, described molten silicon is solidified, to form refining silicon ingot; And excise the top of described refining silicon ingot, to remove metallic impurity from described silicon ingot.
Accompanying drawing explanation
By below in conjunction with the detailed description of accompanying drawing to embodiment, above-mentioned and other side, feature and advantage of the present invention will become obvious.
Fig. 1 is the schematic diagram of the device manufacturing polysilicon according to an embodiment of the invention based on electron beam melting;
Fig. 2 is the sectional view of the starting block comprising dummy bar according to an embodiment of the invention;
Fig. 3 is the schema of method for manufacturing polycrystalline silicon according to an embodiment of the invention;
Fig. 4 illustrates the example that can be applicable to the solid/liquid interfaces formed by electron-beam pattern of the present invention;
Fig. 5 is the cross section by application with the polycrystal silicon ingot cast out prepared with the starting block of the graphite dummy bar of silicon lock joint;
Fig. 6 has graphite dummy bar by application but the starting block not having silicon the to buckle cross section of the polycrystal silicon ingot cast out of preparing;
Fig. 7 is the photo of the polycrystal silicon ingot prepared according to the present invention's example; And
Fig. 8 is the photo in the cross section near the impurity border of the polycrystal silicon ingot prepared according to the present invention's example.
Embodiment
Describe embodiments of the invention in detail below with reference to accompanying drawings.Should be appreciated that, the invention is not restricted to the following examples, and the present invention also can be realized by different modes, described embodiment of the present inventionly discloses complete to make, and makes those skilled in the art intactly understand the present invention to provide.Scope of the present invention is only by appended claims itself and equivalents.Identical parts are represented with identical Reference numeral in whole specification sheets.
The device and method utilizing dummy bar manufacture polysilicon based on electron beam melting according to the embodiment of the present invention is described below with reference to accompanying drawings.
Fig. 1 is the schematic diagram of the device manufacturing polysilicon according to an embodiment of the invention based on electron beam melting.
With reference to Fig. 1, poly plant comprises vacuum chamber 110, comprises two electron beam gun of first gun 120a and the second electron beam gun 120b, silicon melting unit 130 and unidirectional solidification unit 140.
Vacuum chamber 110 keeps 10 during the melting of raw silicon and the casting of molten silicon
-4the high vacuum of torr.The pressure of vacuum chamber 110 inside can remain on 10
-5torr.
First gun 120a and the second electron beam gun 120b is placed on the upside of vacuum chamber 110, with by electron beam irradiation in vacuum chamber 110.
Silicon melting unit 130 is placed on a region, and the first electron beam is irradiated to this region from first gun 120a, that is, the first electron beam irradiation region.Raw silicon powder is fed into silicon melting unit 130 from raw silicon feeding unit 101, is then carried out first electron beam melting of accelerating and accumulating (accumulated) by by first gun 120a.
Here, first gun 120a can accelerate the first electron beam and accumulate, reach 4000kW/m
2or below, such as, about 2000 ~ 4000kW/m
2output energy, unsteady state molten silicon can not being shown splash crucible outside and so on.
Silicon melting unit 130 can be provided with water-cooling type crucible, and this water-cooling type crucible can contribute to controlled cooling model efficiency.The surface of this water-cooling type crucible can have the cooling channel that can be filled with liquid.
The material of water-cooling type crucible can be copper (Cu), makes when refined silicon, and the starting materials of silicon melting unit 130 can not pollute molten silicon.
Unidirectional solidification unit 140 can cast molten silicon continuously, simultaneously the segregation of guide wire impurity, improves the silicon refining efficiency in high-purity polycrystalline silicon production thus.Unidirectional solidification unit 140 is placed on a region, and the second electron beam is irradiated to this region from the second electron beam gun 120b, that is, the second electron beam irradiation region, and unidirectional solidification unit 140 is connected with silicon melting unit 130 via running channel (runner) 135.Running channel 135 can be attached to silicon melting unit 130 or unidirectional solidification unit 140.Along with raw silicon is supplied in silicon melting unit 130 constantly, the amount of the molten silicon in silicon melting unit 130 increases.Therefore, the molten silicon overflowed from silicon melting unit 130 is supplied to unidirectional solidification unit 140 via running channel 135.
In addition, be formed with cooling channel 142 in the downside of unidirectional solidification unit 140, cool molten silicon by this cooling channel 142 cooling water supply etc.This improves the coagulation efficacy of molten silicon.In addition, in unidirectional solidification unit 140, be provided with the starting block 145 along driving in downward direction.
Molten silicon edge, is in downward direction transmitted along in downward direction driving so that when growing the foundry goods being used for silicon casting in unidirectional solidification unit 140 inside by starting block 145.
Starting block 145 can comprise dummy bar, and high purity silicon button (silicon button) is attached to this dummy bar, to prevent the silicon ingot cast out by graphite contamination.
In unidirectional solidification unit 140, from silicon melting unit 130 supply molten silicon by by second electron beam gun 120a accelerate and accumulation the second electron beam and while keeping molten state, transmitted to cooling channel 142 by starting block 145, be solidified in upward direction via the liquid be filled in cooling channel 142 afterwards and cast.
Second electron beam gun 120b can accelerate the second electron beam and accumulate, reach 1000 ~ 2000kW/m
2output energy, make silicon to remain on molten state, and molten silicon can not show and splashes outside and so on the unsteady state of crucible.Molten silicon can be affected because molten silicon splashes the outside this unsteady state of crucible overflow from melting unit.
Unidirectional solidification unit 140 can comprise copper casting container, is formed with the cooling channel the same with water-cooling type crucible in the bottom of this copper casting container.
Fig. 2 is the sectional view of the starting block comprising dummy bar according to an embodiment of the invention.
With reference to Fig. 2, the high purity silicon that starting block 145 can comprise the upside joining dummy bar 146 to buckles 147.
Silicon button 147 can have the purity of 8N to 10N and the thickness of about 10 to 15mm, and when silico briquette is by the second electron beam melting, silicon button 147 is formed in unidirectional solidification unit 140 inside and joins dummy bar 146 to.
Dummy bar 146 can be made up of graphite material.
Particularly, dummy bar 146 can be made up and porous surface of low density graphite.Graphite dummy bar 146 makes by the silicon of the second electron beam melting after infiltrating and be solidified to the porous surface inside of this graphite dummy bar, is closely attached to this dummy bar.The temperature contrast between the cooling channel of bottom and initial molten silicon can be prevented thus large.Here, when silicon frit 145 is only made up of dummy ingot block 146 instead of is bonded by dummy ingot block and starting block, the silicon ingot cast out can by the graphite contamination of dummy bar.
Therefore, silicon button 147 prevents dummy bar 146 and molten silicon or the silicon ingot that casts out from directly contacting, and prevents molten silicon or the silicon ingot that casts out by the pollution of the graphite of dummy bar 146 thus.
Fig. 3 is the schema of method for manufacturing polycrystalline silicon according to an embodiment of the invention.
With reference to Fig. 3, the method for manufacturing polycrystalline silicon according to this embodiment comprises: prepare poly plant in step S310, install dummy bar in step S320, to be buckled prepare starting block, melting low-purity silicon in step S340 supply, overflow molten silicon in step S350, solidify the top of carrying out refining and excising the silicon ingot cast out in step S370 in step S360 by molten silicon in step S330 by melting silicon.
In the operation S310 preparing poly plant, the preparation poly plant comprising vacuum chamber, first gun and the second electron beam gun, silicon melting unit and unidirectional solidification unit as shown in Figure 1, casts molten silicon with melting raw silicon.
In the operation S320 installing dummy bar, dummy bar is arranged on unidirectional solidification unit inner.Then, in the operation S330 preparing starting block, buckled by melting silicon on dummy bar and prepare starting block.
The installation of dummy bar can be undertaken by following process.
First, the dummy bar be made up of graphite etc. is arranged on unidirectional solidification unit inner.Then silico briquette is placed on the top of dummy bar.Then, about 10
-5under the vacuum atmosphere of torr by the second electron beam by silico briquette melting to join dummy bar to.By this process, form the starting block with silicon button, this silicon button is placed on the top of starting block and engages with the dummy bar being placed on starting block bottom.
Then, in the operation S340 of supply and melting low-purity silicon, supply dusty raw materials silicon to silicon melting unit, and from first gun, the first electron beam is irradiated to this raw silicon, with melting silicon raw material.Powdered silicon raw material can have the purity of 2N and the median size of 1 to 2mm.
While raw silicon is by the first electron beam melting, remove the volatile component in raw silicon by vacuum volatilization, such as, aluminium (Al), calcium (Ca), phosphorus (P), magnesium (Mg), manganese (Mn).
Volatilize under the high temperature that boiling point and vapour pressure volatile impunty under a high vacuum with the first electron beam lower than silicon produce.Here, by increasing output energy and the irradiation time of the first electron beam, refining efficiency can be improved.
In operation S340, can be accelerated by first gun and accumulate the first electron beam, to reach about 4000kW/m
2output energy, promote silicon melting thus and remove volatile impunty.
Then, in the operation S350 overflowing molten silicon, raw silicon is supplied to constantly in silicon melting unit, the amount sustainable growth of the molten silicon thus in silicon melting unit, makes molten silicon overflow from silicon melting unit and be supplied to unidirectional solidification unit by running channel.
Then, solidifying in the operation S360 of refine molten silicon by molten silicon, unidirectional solidification unit receives molten silicon, and by molten silicon along transmitting, make silicon remain on molten state by irradiating the second electron beam from the second electron beam gun to molten silicon by comprising the starting block of dummy bar along driving in downward direction in downward direction simultaneously.Then, molten silicon solidifies from its underpart, carries out refining simultaneously, provide the silicon ingot cast out thus from its underpart to its top to molten silicon.
In operation S360, the second electron beam gun can accelerate and accumulate the second electron beam, makes the second electron beam reach 1000 to 2000kW/m
2output energy so that from melting unit supply silicon while, make silicon remain on molten state.
Operation S360 in, can drive starting block make its with 0.005 to 0.05mm/s speed declines, thus implementation procedure control and prevention molten silicon leak below unidirectional solidification unit 140.
In this process, being included in the iron (Fe) in molten silicon, nickel (Ni), titanium (Ti), chromium (Cr), copper (Cu) etc. along with solid/liquid interfaces moves up.As shown in Figure 4, in molten silicon process of setting, when solid/liquid interfaces keeps vertical with the direction of growth during temperature contrast Datong District between solid phase 420 with liquid phase 410, the effect of this impurity segregation can be demonstrated fully.
According to the present embodiment, unidirectional solidification unit is provided with the starting block comprising dummy bar, thus make silicon remain on molten state within relatively long period by the second electron beam, and by the state utilizing the starting block comprising dummy bar easily can control molten silicon, improve the impurity segregation efficiency along with solid/liquid interfaces thus.
Then, in the operation S370 on the top of excision silicon ingot, excise the top of the silicon ingot cast out.Due to the impurity that comprises in molten silicon along with solid/liquid interfaces moves up, the segregation of metallic impurity concentrates on the topmost (with reference to Fig. 8) of the silicon ingot cast out.Therefore, excised by this topmost of the silicon ingot that will cast out, highly purified polysilicon can be provided.
According to this embodiment, by adjustment operation time and the speed of growth, the final polysilicon formed can be made to have the diameter of about 100mm and the height of 1 to 1000mm.Here, this process is controlled, to make to have concentrated the top of the silicon cast out of impurity to be less than 20% of sample whole height.
The polysilicon produced by this process can have the purity of 5N to 7N, therefore can be applied to photovoltaic cell.
Like this, according to described embodiment, utilize dummy bar manufacture the method for polysilicon based on electron beam melting and device can by the removal utilizing the vacuum refinement of the first electron beam to realize volatile impunty.
In addition, by applying dummy bar in the unidirectional solidification process of molten silicon, easily can control the state of molten silicon according to the poly plant of embodiment, improving metallic impurity removal efficiency thus.
Be there is by the polysilicon prepared according to the method for described embodiment the purity of 5N to 7N, therefore may be used for photovoltaic cell.
Example
Then, formation of the present invention and effect is illustrated in greater detail with reference to example below.But these examples provide for illustrative purposes, restriction the present invention should be interpreted as by any way.
Here the explanation of apparent details for a person skilled in the art will be omitted.
First, polysilicon is produced by following process.
Graphite dummy bar is arranged in unidirectional solidification unit, and purity is 9N and the silico briquette that weight is 180g is supplied in unidirectional solidification unit.Then, vacuum chamber is made to keep 10
-5with 2000kW/m under the high vacuum state of torr, from the second electron beam gun
2output energy to silicon irradiating electron beam 10 minutes, with melting raw silicon, and molten silicon is engaged with the dummy bar below it.
Be 1 be fed to silicon melting unit to 10mm by the Si powder that raw material feed device is supplied to water-cooling type crucible by size of particles, meanwhile, use first gun with 1000 to 1500kW/m
2the pattern shown in output energy Fig. 5 by the first electron beam irradiation to Si powder.
Then, molten silicon is supplied to unidirectional solidification unit along running channel, and make starting block with 0.005 to 0.05mm/s speed be lowered and cool starting block, utilize the second electron beam gun to be 1000 to 2000kW/m by output energy simultaneously
2the second electron beam according to the composite circular patterned illumination shown in Fig. 6 to molten silicon, thus make silicon remain on molten state.
Fig. 5 has the cross section of the polycrystal silicon ingot cast out prepared with the starting block of the graphite dummy bar of silicon lock joint by application, and Fig. 6 has graphite dummy bar by application but the starting block not having silicon the to buckle cross section of the polycrystal silicon ingot cast out of preparing.
As shown in Figure 5, in the polysilicon layer 450 of the polycrystal silicon ingot cast out, there is not graphite contamination thing, but according to Fig. 6, in the polysilicon layer 450 of the polycrystal silicon ingot cast out, occur graphite contamination thing 450a.In other words, can find out by application have with the polycrystal silicon ingot cast out prepared by the starting block of the graphite dummy bar of silicon lock joint than by apply there is graphite dummy bar but the polycrystal silicon ingot cast out prepared by the starting block not having silicon to buckle present lower graphite contamination degree.
Fig. 7 is the photo of the polycrystal silicon ingot prepared according to the present invention's example, and Fig. 8 is the photo in the cross section near the impurity border of the polycrystal silicon ingot prepared according to the present invention's example.
With reference to Fig. 7 and Fig. 8, can find out that in the process manufacturing polysilicon metallic impurity 401 move to the topmost of ingot casting 400.
Table 1 demonstrates and carries out ICP-AES(Inductively CoupledPlasma-Atomic Emission Spectrometry to the polysilicon prepared according to this example, inductively coupled plasma atomic emission spectrometry) analyze, the purity check result of the impurity layer obtained and refining layer.
Table 1(unit: ppm)
Can find out with reference to table 1, the raw silicon of 2N purity is 6N purity by refining, and impurity is concentrated in the impurity layer of the topmost of the polycrystal silicon ingot utilizing device according to the present invention to produce.
Although be described herein some embodiments, it is apparent to those skilled in the art that these embodiments just provide for illustrative purposes, and without departing from the spirit and scope of the present invention, can various amendment, modification and replacement carried out.Therefore, scope of the present invention is only limited by appended claim and equivalent thereof.
Claims (10)
1. a poly plant, comprising:
Vacuum chamber;
First gun and the second electron beam gun, be arranged in the upside of described vacuum chamber, thus by electron beam irradiation in described vacuum chamber;
Silicon melting unit, is placed on the first electron beam irradiation region corresponding with described first gun, and dusty raw materials silicon is fed into this silicon melting unit and by described first electron-beam melting; And
Unidirectional solidification unit, be placed on the second electron beam irradiation region corresponding with described second electron beam gun, starting block is provided with in described unidirectional solidification unit, along driving this starting block in downward direction, so that along transmitting molten silicon in downward direction, and the bottom of described unidirectional solidification unit is formed with cooling channel, described molten silicon is made to solidify from the bottom of described molten silicon to top and be cast, described starting block comprises dummy bar, and this dummy bar has to be buckled with the silicon of the upper bond of this dummy bar
Wherein, described dummy bar is made up of graphite, is porous surface with the surface of the described dummy bar of described silicon lock joint, and described silicon fastener has the purity of 8N to 10N and the thickness of 10 to 15mm.
2. device according to claim 1, wherein, described unidirectional solidification unit is provided with casting container, and described casting container is made of copper and lower end is formed with cooling channel.
3. device according to claim 1, wherein, described silicon button is undertaken melting by treating fusing silico briquette in described unidirectional solidification unit and is formed, and joins described dummy bar to.
4. a poly plant, comprising:
Electron beam gun;
Silicon melting unit, is filled with the silicon melted by described electron beam gun; And
Unidirectional solidification unit, receive molten silicon from described silicon melting unit, this unidirectional solidification unit comprises starting block, and this starting block makes described molten silicon along the described molten silicon of transmission in downward direction of described unidirectional solidification unit,
Wherein, described starting block comprises and the silicon button faced by described molten silicon and the dummy bar with described silicon lock joint,
Wherein, described dummy bar is made up of graphite, is porous surface with the surface of the described dummy bar of described silicon lock joint, and described silicon fastener has the purity of 8N to 10N and the thickness of 10 to 15mm.
5. device according to claim 4, wherein, the purity of described silicon button is higher than the purity of described molten silicon.
6. a method for manufacturing polycrystalline silicon, comprising:
Dusty raw materials silicon is supplied to silicon melting unit, and by melting supplied raw silicon to described raw silicon irradiating electron beam;
Sustainable supply and the described raw silicon of fusing, make described molten silicon overflow from described silicon melting unit;
Being received the described molten silicon overflowed from described silicon melting unit by unidirectional solidification unit, by driving starting block along transmitting described molten silicon in downward direction, then from the bottom of described molten silicon to top, described molten silicon being solidified, to form refining silicon ingot; And
Excise the top of described refining silicon ingot, to remove metallic impurity from described silicon ingot,
Wherein, described starting block comprises dummy bar, and this dummy bar has to be buckled with the silicon of the upper bond of this dummy bar, and described dummy bar is made up of graphite, be porous surface with the surface of the described dummy bar of described silicon lock joint, and described silicon fastener have the purity of 8N to 10N and the thickness of 10 to 15mm.
7. method according to claim 6, wherein, described starting block is lowered with the speed of 0.005 to 0.05mm/s.
8. method according to claim 6, wherein, described raw silicon has the purity of 2N and the average particulate diameter of 1 to 2mm.
9. method according to claim 6, wherein, when melting the raw silicon supplied, volatile impunty volatilizees under vacuo from described raw silicon.
10. method according to claim 9, wherein, in the process of setting of described molten silicon, is included in the top of the metallic impurity described molten silicon along with solid/liquid interfaces moves in described molten silicon.
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| CN104878448A (en) * | 2015-05-15 | 2015-09-02 | 大连理工大学 | Polycrystalline silicon zone melting equipment employing electron beam and method for removing impurities |
| CN106894084A (en) * | 2017-01-16 | 2017-06-27 | 大工（青岛）新能源材料技术研究院有限公司 | A kind of method for changing electron beam purifying polycrystalline silicon solidification crucible shop fixtures mode |
| CN108128779B (en) * | 2018-01-30 | 2020-05-19 | 青岛蓝光晶科新材料有限公司 | Method for removing carbon and nitrogen impurities in polycrystalline silicon |
| CN109850905B (en) * | 2019-04-16 | 2020-11-06 | 大连理工大学 | Method and device for improving impurity removal amount of volatile impurities in electron beam melting process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62260710A (en) * | 1986-05-06 | 1987-11-13 | Osaka Titanium Seizo Kk | Casting of polycrystalline silicon semiconductor |
| CN101289188A (en) * | 2008-05-30 | 2008-10-22 | 大连理工大学 | Process and device for removing phosphorus and metal impurities in polycrystalline silicon |
| CN102126726A (en) * | 2011-01-29 | 2011-07-20 | 大连隆田科技有限公司 | Method and equipment for efficiently purifying polysilicon powder by utilizing electron beams |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62260710A (en) * | 1986-05-06 | 1987-11-13 | Osaka Titanium Seizo Kk | Casting of polycrystalline silicon semiconductor |
| CN101289188A (en) * | 2008-05-30 | 2008-10-22 | 大连理工大学 | Process and device for removing phosphorus and metal impurities in polycrystalline silicon |
| CN102126726A (en) * | 2011-01-29 | 2011-07-20 | 大连隆田科技有限公司 | Method and equipment for efficiently purifying polysilicon powder by utilizing electron beams |
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