CN103420376B - Electron beam melting is utilized to manufacture the device and method of high-purity polycrystalline silicon - Google Patents
Electron beam melting is utilized to manufacture the device and method of high-purity polycrystalline silicon Download PDFInfo
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Abstract
The disclosure is provided for the apparatus and method manufacturing high-purity polycrystalline silicon.Described device comprises: the vacuum chamber keeping vacuum atmosphere; First gun and the second electron beam gun, be arranged in the upper end of vacuum chamber, with by electron beam irradiation in vacuum chamber; Silicon melting unit, this silicon melting unit is placed on the first electron beam irradiation region corresponding with first gun, and dusty raw materials silicon is fed into silicon melting unit and by the first electron-beam melting; And unidirectional solidification unit, be placed on the second electron beam irradiation region corresponding with the second electron beam gun, and be connected with silicon melting unit via running channel.The bottom of described unidirectional solidification unit is formed with cooling channel, and the starting block be provided with in inside along in downward direction driving, make from the molten silicon of silicon melting unit supply by described second electron beam while keeping molten state, by described starting block along transmitting to direction, portion, solidified along the direction from the bottom of described molten silicon to top by described cooling channel afterwards.
Description
Technical field
The present invention relates to the manufacturing technology of polysilicon, in more detail, relate to utilize electron beam melting (electron-beammelting) from 99 ~ 99.9%(2 ~ 3N) the levels of metal silicon raw material of purity range produces has 99.9999%(6N) and the technology of high-purity polycrystalline silicon of purity.
Background technology
The purity of silicon represents with 2N, 3N, 6N, 11N etc. usually.Here, in the numeral weight percent (wt%) before ' N ' 9 number, such as 2N represents the purity of 99%, and 6N represents the purity of 99.9999%, and 11N represents the purity of 99.999999999%.
Semiconductor grade silicon needs the ultra-high purity reaching 11N.But, as known in the art, as photovoltaic cell starting material and there is the silicon of the purity of relatively low 5N ~ 7N, the light conversion efficiency approximate with the high purity silicon with 11N is provided.
Semiconductor grade silicon is produced by chemical gasification process.But this silicon production process, except production cost height, also produces a large amount of pollution substances and production efficiency is low.
Therefore, described silicon production process is unsuitable for the semiconductor grade silicon producing the raw material being used as photovoltaic cell, and has made great efforts energetically to have attempted developing the metallurgical refining process that can realize the batch production of high purity silicon by low cost.
The example producing the metallurgical refining process of the high purity silicon being used for photovoltaic cell comprises: vacuum refining process, wet puddling process, oxidising process, unidirectional solidification refining process etc.A part in these refining processs is now by commercialization.
Particularly, such as vacuum refinement and unidirectional solidification refining etc. are based on the silicon manufacturing technology of Metal Melting, because its Characteristics Control is easy, and in advantages such as the pollution caused by impurity are in operation few, therefore study these technology energetically.
Here, vacuum refining process is by feed metal fusing and from the metal of melting, removes the process of boiling point and the vapour pressure impurity lower than silicon, unidirectional solidification refining process be at silicon from liquid to the phase transition process of solid, make impurity along the process of interface movement between solid and liquid (segregation).
Various types of vacuum and segregation refining process according to energy development, and most of refining process adopts magneticinduction heating.
Summary of the invention
The invention provides and a kind ofly utilize electron beam melting to manufacture the device of high-purity polycrystalline silicon.
The present invention also provides a kind of by utilizing described poly plant to control electron beam melting thus can making the manufacture method of the maximized high-purity polycrystalline silicon of silicon refining efficiency.
According to an aspect of the present invention, a kind of poly plant, comprising: the vacuum chamber keeping vacuum atmosphere; First gun and the second electron beam gun, be arranged in the upper end of described vacuum chamber, with by electron beam irradiation in described vacuum chamber; Silicon melting unit, this silicon melting unit is placed on the first electron beam irradiation region corresponding with described first gun, and dusty raw materials silicon is fed into described silicon melting unit and by described first electron-beam melting; And unidirectional solidification unit, be placed on the second electron beam irradiation region corresponding with described second electron beam gun, and be connected with described silicon melting unit via running channel.Here, the bottom of described unidirectional solidification unit is formed with cooling channel, and the starting block be provided with in inside along in downward direction driving, make from the molten silicon of described silicon melting unit supply by described second electron beam while keeping molten state, by described starting block along transmitting to direction, portion, solidified along the direction from the bottom of described molten silicon to top by described cooling channel afterwards.
According to another aspect of the present invention, a kind of method for manufacturing polycrystalline silicon, comprising: dusty raw materials silicon is supplied to silicon melting unit, and by utilizing first gun that the first electron beam irradiation is carried out to described raw silicon the raw silicon that melting supplies; Supply also raw silicon described in melting, makes molten silicon overflow from described silicon melting unit constantly; The described molten silicon overflowed from described silicon melting unit is received by unidirectional solidification unit, by along driving starting block to transmit described molten silicon in downward direction, subsequently by utilizing liquid to solidify described molten silicon from the bottom of described molten silicon to top, to form the silicon ingot of refining; And excise the top of described refining silicon ingot, to remove metallic impurity from described silicon ingot.
Accompanying drawing explanation
By below in conjunction with the detailed description of accompanying drawing to embodiment, above-mentioned and other side, feature and advantage of the present invention will become obvious.
Fig. 1 utilizes electron beam melting to manufacture the schematic diagram of the device of high-purity polycrystalline silicon according to one embodiment of the invention.
Fig. 2 is the sectional view of starting block according to an embodiment of the invention.
Fig. 3 is the schema of method for manufacturing polycrystalline silicon according to an embodiment of the invention;
Fig. 4 represents an example by can be applicable to the solid/liquid interfaces that electron-beam pattern of the present invention is formed;
Fig. 5 represents an example of the electron beam irradiation pattern of first gun;
Fig. 6 represents an example of the electron beam irradiation pattern of the second electron beam gun;
Fig. 7 is the photo of the polycrystal silicon ingot prepared in an example of the present invention.
Fig. 8 is the photo in the cross section near the impurity border of the polycrystal silicon ingot prepared according to the present invention's example.
Embodiment
Describe embodiments of the invention in detail below with reference to accompanying drawings.Should be appreciated that, the invention is not restricted to the following examples, and the present invention also can be realized by different modes, described embodiment of the present inventionly discloses complete to make, and makes those skilled in the art intactly understand the present invention to provide.The present invention is only by appended claims itself and equivalents.Identical parts are represented with identical Reference numeral in whole specification sheets.
Describe below with reference to accompanying drawings and manufacture the device of high-purity polycrystalline silicon according to the electron beam melting that utilizes of the embodiment of the present invention.
Fig. 1 utilizes electron beam melting to manufacture the schematic diagram of the device of high-purity polycrystalline silicon according to an embodiment of the invention.
With reference to Fig. 1, poly plant comprises vacuum chamber 110, comprises two electron beam gun of first gun 120a and the second electron beam gun 120b, silicon melting unit 130 and unidirectional solidification unit 140.
Vacuum chamber 110 keeps 10 during manufacture polysilicon
-4torr(hold in the palm) high vacuum.When the pressure of vacuum chamber 110 inside is more than 10
-4during torr, because the volatilization of impurity is insufficient, reduce silicon refining effect thus.In this embodiment, vacuum chamber remains on 10
-5under torr.
First gun 120a and the second electron beam gun 120b is placed on the upper end of vacuum chamber 110, with by electron beam irradiation in vacuum chamber 110.
Silicon melting unit 130 is placed on the region of the first electron beam irradiated from first gun 120a, that is, the first electron beam irradiation region.Raw silicon is fed into silicon melting unit 130 from raw silicon feed unit 101, is then carried out by by first gun 120a the first electron-beam melting accelerating and accumulate (accumulated).
Here, first gun 120a can accelerate the first electron beam and accumulate, reach 4000kW/m
2or below, such as, about 2000 ~ 4000kW/m
2output energy, the unstable situation such as molten silicon be there will not be splash crucible outside.
Silicon melting unit 130 can be provided with water-cooling type crucible, and this water-cooling type crucible can be conducive to controlled cooling model efficiency.The surface of this water-cooling type crucible can have can the water-cooling channel of filling liquid.
The material of water-cooling type crucible can be copper (Cu), makes when refined silicon, and the starting materials of silicon melting unit 130 can not pollute molten silicon.
Unidirectional solidification unit 140 can cast molten silicon continuously, and the segregation of guide wire impurity, improves the silicon refining efficiency in the production of high-purity polycrystalline silicon thus simultaneously.
Unidirectional solidification unit 140 is placed on the region irradiating the second electron beam based on the second electron beam gun 120b, namely, second electron beam irradiation region, and unidirectional solidification unit 140 is connected with silicon melting unit 130 via running channel (runner) 135, running channel 135 can be attached to silicon melting unit 130 or unidirectional solidification unit 140.Along with to silicon melting unit 130 base feed silicon continuously, the amount of the molten silicon in silicon melting unit 130 increases.Therefore, the molten silicon overflowed from silicon melting unit 130 is supplied to unidirectional solidification unit 140 via running channel 135.
In addition, cooling channel 142 is formed with in the downside of unidirectional solidification unit 140, by this cooling channel 142 for the water coolant etc. being applied to cooling molten silicon.This improves the coagulation efficacy of molten silicon.In addition, the starting block 145 along driving is provided with in downward direction in the inside of unidirectional solidification unit 140.
Molten silicon edge, is in downward direction transmitted along in downward direction driving so that when growing the foundry goods being used for silicon casting in unidirectional solidification unit 140 inside by starting block 145.
In unidirectional solidification unit 140, the molten silicon supplied by silicon melting unit 130 by by second electron beam gun 120a accelerate and accumulation the second electron beam and while keeping molten state, transmitted to cooling channel 142 by starting block 145, solidify in upward direction by the liquid be filled in cooling channel 142 and cast afterwards, forming polysilicon thus.
Second electron beam gun 120b can accelerate the second electron beam and accumulate, reach 1000 ~ 2000kW/m
2output energy, make silicon to remain on molten state, and molten silicon there will not be and splashes outside and so on the unstable situation of crucible.Molten silicon can be affected because molten silicon splashes the outside this unstable situation of crucible overflow from melting unit.
Unidirectional solidification unit 140 as in water-cooling type crucible, can be included in the copper casting container that bottom is formed with cooling channel.
Fig. 2 is the sectional view of an embodiment according to starting block 145 of the present invention.
With reference to Fig. 2, starting block 145 can comprise the highly purified silicon button 147 on the top joining dummy bar (dummybar) 146 to.
Silicon button 147 can have the purity of 8N ~ 10N, the thickness of about 10 ~ 15mm, and when then the inner silico briquette of unidirectional solidification unit 140 is joined to dummy bar 146 by the second electron-beam melting, silicon button 147 is formed.
Dummy bar 146 can be made up of graphite.
Silicon button 147 prevents dummy bar 146 and molten silicon or the silicon ingot that casts out from directly contacting, to prevent molten silicon or the silicon ingot that casts out by the graphite contamination of dummy bar.
Particularly, dummy bar 146 can be made up of low density graphite and have porous surface.Graphite dummy bar 146 makes by the silicon of the second electron-beam melting after infiltrating and be solidified to the porous surface inside of this graphite dummy bar, engages securely with this dummy bar.。The temperature contrast between the cooling channel of bottom and the molten silicon of initial stage can be prevented thus large.
In device according to the present invention, from first gun 120a, electron-beam pattern, the output energy of the first electron beam and the second electron beam, the amount being fed to the water coolant of unidirectional solidification unit 140, the amount of raw silicon of supply silicon melting unit 130 and the polycrystalline silicon growth speed etc. unidirectional solidification unit 140 that the second electron beam gun 120b irradiates, can be different according to the configuration of each key element or size etc.
Fig. 3 is the schema of the method for manufacturing polycrystalline silicon of one embodiment of the invention.
With reference to Fig. 3, the method for manufacturing polycrystalline silicon according to this embodiment comprises: prepare poly plant in step S310, install dummy bar in step S320, prepare starting block in step S330 by melting silicon button, melting low-purity silicon in step S340 supply, overflow molten silicon in step S350, solidify the top of carrying out refining and excising the silicon ingot cast out in step S370 in step S360 by molten silicon.
In the operation S310 preparing poly plant, prepare as the poly plant comprising vacuum chamber, first gun, the second electron beam gun, silicon melting unit and unidirectional solidification unit shown in above-mentioned Fig. 1.
In the operation S320 installing dummy bar, dummy bar is arranged on unidirectional solidification unit inner.Thereafter, in the operation S330 preparing starting block, prepare starting block by melting silicon button on dummy bar.
Particularly, the preparation of dummy bar installation and starting block can be undertaken by following process.
First, in unidirectional solidification unit inside, the dummy bar be made up of graphite etc. is installed.Thereafter on dummy bar, place silico briquette (chunk).Then, silico briquette is melted, to join dummy bar to by the second electron beam under the vacuum atmosphere of about 10-5torr.By this process, formed and have silicon button starting block, this silicon button is placed on the top of starting block and engages with the dummy bar being placed on starting block bottom.
Then, in the operation S340 of supply and melting low-purity silicon, supply dusty raw materials silicon to silicon melting unit, and irradiate the first electron beam from first gun, with melt raw material silicon.Dusty raw materials silicon can have the purity of 2N and the median size of 1 ~ 2mm.
While raw silicon is by the first electron-beam melting, the volatile components such as such as aluminium (Al), calcium (Ca), phosphorus (P), magnesium (Mg) and manganese (Mn) are removed by vacuum volatilization.
Volatilize under the high temperature that boiling point and vapour pressure volatile impunty under vacuo with the first electron beam lower than silicon produce.Here, by increasing output energy and the irradiation time of the first electron beam, refining efficiency can be improved.
In this operation S340, can be accelerated the first electron beam by first gun and accumulate, reach about 4000kW/m to make the first electron beam
2output energy, promote silicon melting thus and remove volatile impunty.
Here, as shown in Fig. 5 (a), first gun is configured to the surface flow controlling molten silicon, and irradiates the first electron beam with head towards the comb-like pattern that running channel is arranged in silicon melting unit, make the energy density that electron beam has near running channel, improve smelting efficiency thus.In addition, as Fig. 5 (b) and 5(c) shown in, the first electron beam is come and gone patterned illumination to running channel according to straight line, to make molten silicon to the flowing of unidirectional solidification unit, makes the temperature that molten silicon keeps identical in running channel simultaneously.The energy density of the first electron beam can be regulated, with the temperature making the temperature of this molten silicon maintain certain process applicable.
Then, in the operation S350 that molten silicon overflows, to silicon melting unit base feed silicon continuously, the amount of the molten silicon thus in silicon melting unit continues to increase, and makes molten silicon overflow from silicon melting unit and be supplied to unidirectional solidification unit by running channel.
Then, undertaken in the operation S360 of refining by solidifying of molten silicon, unidirectional solidification unit receives molten silicon, and by the second electron beam gun molten silicon irradiated while the second electron beam keeps the molten state of silicon, by along driving the starting block comprising dummy bar to make molten silicon along transmitting in downward direction in downward direction.Then, molten silicon solidifies from bottom, carries out refining simultaneously, provide the silicon ingot cast out thus from the bottom of molten silicon to top.
In operation S360, the second electron beam gun can accelerate the second electron beam and accumulate, and makes the second electron beam reach 1000 ~ 2000kW/m
2output energy, so that can molten state be kept from the silicon of silicon melting unit supply.
Here, as shown in Figure 6, the second electron beam gun can irradiate the second electron beam according to circular or volution composite pattern to unidirectional solidification unit.
The pattern of the second electron beam is important process factors, not only determine the condition of surface of molten silicon and the contact area of molten silicon and water-cooling type inner surface of crucible, also determine the temperature distribution (profile) of molten silicon inside, thus great effect is produced to refining efficiency.According to the surface shape that circle or the volution composite pattern of the present embodiment protrude by making the molten silicon maintenance in process, the contact between molten silicon and water-cooling type inner surface of crucible is minimized.
Fig. 4 represents an example of the solid phase 410 and liquid phase 420 formed by the pattern of the second electron beam, and makes the temperature distribution of molten silicon vertical with growth direction according to the circle of the present embodiment or volution composite pattern, as shown in Figure 4, maximizes refining effect thus.
In operation S360, starting block can be driven to make it decline with the speed of 0.005 ~ 0.05mm/s, thus implementation procedure control and stop molten silicon to leak below unidirectional solidification unit 140.
In this process, the iron (Fe) comprised in molten silicon, nickel (Ni), titanium (Ti), chromium (Cr), copper (Cu) etc. move up along solid/liquid interfaces.In molten silicon process of setting, when solid phase keeps vertical temperature head simultaneously between liquid phase and solid phase large with the interface of liquid phase with the direction of growth, the segregation effect of this impurity can be shown fully.
According to this embodiment, in unidirectional solidification unit, make molten silicon remain on molten state by the second electron beam and making to make solid/liquid interfaces vertical with the direction of growth by the best pattern of this electron beam, molten silicon is cooled from the bottom of molten silicon, thus the temperature head between solid phase and liquid phase is maximized, improve the segregation effect of impurity thus.
Then, in the operation S370 on excision silicon ingot top, the top of the silicon ingot cast out is excised.Because the impurity comprised in molten silicon moves up along solid/liquid interfaces, the segregation of metallic impurity concentrates on the topmost (with reference to Fig. 8) of the silicon ingot cast out.Therefore, can by the excision of the topmost of the silicon ingot cast out be improved highly purified polysilicon.
According to this embodiment, by adjustment operation time and the speed of growth, final polysilicon can have the height of diameter and 1 to 1000mm being approximately 100mm.Here, control described process, to make to have concentrated the height of the silicon ingot topmost cast out of impurity to be less than 20% of whole height of specimen.
The polysilicon produced by this process can have the purity of 5N ~ 7N, therefore usefully can be applied to photovoltaic cell.
Therefore, according to the poly plant of the embodiment of the present invention and method by the melting of applying electronic bundle, vacuum refinement and unidirectional solidification refining can be carried out, provide high-purity polycrystalline silicon thus.
In addition, the removal efficiency of volatile impunty and metallic impurity can be improved by the electron beam of application high vacuum and high-energy-density according to the poly plant of the embodiment of the present invention and method.
Be there is the purity of 5N to 7N, therefore, it is possible to for photovoltaic cell by the polysilicon prepared according to the method for embodiment.
Example
Then, with reference to example below, formation of the present invention and effect are described in more detail.But these examples just illustratively provide, restriction the present invention should be interpreted as by any way.
Here the explanation of apparent details for a person skilled in the art will be omitted.
First, polysilicon is produced by following process.
Dummy bar is arranged in unidirectional solidification unit, and be 9N by purity, quality is that the silico briquette of 180g is supplied to unidirectional solidification unit.Afterwards, vacuum chamber is made to keep 10
-5under the high vacuum state of torr, be 2000kW/m by output energy
2electron beam irradiation described in silicon 10 minutes, with melt raw material silicon, and the bottom of molten silicon is engaged with the dummy bar below molten silicon.
By be supplied to by feedstock supply unit cold-crucible, size of particles is supplied to silicon melting unit in the Si powder of 1 to 10mm, uses first gun with 1000 to 1500kW/m simultaneously
2output energy according to the pattern shown in Fig. 5 by the first electron beam irradiation to described Si powder.
Then, make molten silicon be supplied to unidirectional solidification unit along running channel, and use the second electron beam gun will have 1000 to 2000kW/m
2the second electron beam of output energy be irradiated to described molten silicon according to the circular composite pattern shown in Fig. 6, simultaneously with 0.005 to 0.05mm/s speed starting block is declined after cool starting block, thus make silicon maintenance molten state.
Fig. 7 is the photo of the polycrystal silicon ingot prepared in an example of the present invention, and Fig. 8 is the photo in the cross section near the impurity border of the polycrystal silicon ingot prepared according to the present invention's example.
With reference to Fig. 7 and Fig. 8, can find out, in the process manufacturing polysilicon, metallic impurity 401 move to the topmost of ingot casting 400.
Table 1 demonstrates and carries out ICP-AES(InductivelyCoupledPlasma-AtomicEmissionSpectrome try to the polysilicon prepared according to this example, inductively coupled plasma atomic emission spectrometry) analyze, the purity check result of the impurity layer obtained and refining layer.
Table 1(unit: ppm)
Can find out with reference to table 1, the raw silicon of 2N purity is refined into 6N purity, and impurity concentrates on the impurity layer of the topmost of the polycrystal silicon ingot utilizing device according to the present invention to produce.
Although be described herein some embodiments, it is apparent to those skilled in the art that these embodiments just provide for illustrative purposes, and without departing from the spirit and scope of the present invention, can various amendment, modification and replacement carried out.Therefore, scope of the present invention is only limited by appended claim and equivalent thereof.
Claims (17)
1. a poly plant, comprising:
Keep the vacuum chamber of vacuum atmosphere;
First gun and the second electron beam gun, be arranged in the upper end of described vacuum chamber, with by electron beam irradiation in described vacuum chamber;
Silicon melting unit, this silicon melting unit is placed on the first electron beam irradiation region corresponding with described first gun, and dusty raw materials silicon is fed into described silicon melting unit and by described first electron-beam melting; And
Unidirectional solidification unit, be placed on the second electron beam irradiation region corresponding with described second electron beam gun, and be connected with described silicon melting unit via running channel, the bottom of described unidirectional solidification unit is formed with cooling channel, and the starting block be provided with in inside along in downward direction driving, make from the molten silicon of described silicon melting unit supply by described second electron beam while keeping molten state, by described starting block along in downward direction transmitting, solidified along the direction from the bottom of described molten silicon to top by described cooling channel afterwards
Wherein, when melting described raw silicon, the comb-like pattern that described first gun is arranged towards running channel with head by described first electron beam irradiation in described silicon melting unit, and by linear for described first electron beam back and forth patterned illumination to described running channel, and when making described silicon remain on molten state by described second electron beam of irradiation, described second electron beam is irradiated to described unidirectional solidification unit with composite circular or spirality pattern by described second electron beam gun.
2. poly plant according to claim 1, wherein, described silicon melting unit is provided with water-cooling type crucible.
3. poly plant according to claim 2, wherein, described water-cooling type crucible has the cooling channel of surperficial filling liquid.
4. according to the poly plant described in claim 2, wherein, the material of described water-cooling type crucible is copper (Cu).
5. poly plant according to claim 1, wherein, described unidirectional solidification unit is provided with the casting container be made of copper, and is formed with cooling channel in the downside of described casting container.
6. poly plant according to claim 1, wherein, described vacuum chamber remains on 10
-4under the vacuum of Torr or lower.
7. a poly plant, comprising:
Electron beam gun, comprises first gun and the second electron beam gun;
Silicon melting unit, described silicon melting unit is placed on the first electron beam irradiation region corresponding with described first gun, is filled with the silicon melted by described electron beam gun; And
Unidirectional solidification unit, be placed on the second electron beam irradiation region corresponding with described second electron beam gun, and be connected with described silicon melting unit via running channel, adjoin described silicon melting cell layout and receive molten silicon from described silicon melting unit, described unidirectional solidification unit comprises cooling channel, so that solidifying described molten silicon along during the described molten silicon of transmission in downward direction of described unidirectional solidification unit
Wherein, when melting described raw silicon, the comb-like pattern that described first gun is arranged towards described running channel with head by described first electron beam irradiation in described silicon melting unit, and by linear for described first electron beam back and forth patterned illumination to described running channel, and when making described silicon remain on molten state by described second electron beam of irradiation, described second electron beam is irradiated to described unidirectional solidification unit with composite circular or spirality pattern by described second electron beam gun.
8. poly plant according to claim 7, wherein, described cooling channel is arranged in the bottom of described unidirectional solidification unit.
9. a method for manufacturing polycrystalline silicon, comprising:
Supply dusty raw materials silicon to silicon melting unit, and by utilizing first gun that the first electron beam irradiation is melted supplied raw silicon to described raw silicon;
Supply constantly and melt described raw silicon, molten silicon is overflowed from described silicon melting unit;
The described molten silicon overflowed from described silicon melting unit is received by unidirectional solidification unit, by along driving starting block to transmit described molten silicon in downward direction, subsequently by utilizing liquid to solidify described molten silicon from the bottom of described molten silicon to top, to form the silicon ingot of refining; And
Excise the top of described refining silicon ingot, to remove metallic impurity from described silicon ingot,
Wherein, described silicon melting unit is placed on the described first electron beam irradiation region corresponding with described first gun, described unidirectional solidification unit is placed on the second electron beam irradiation region corresponding with the second electron beam gun, and is connected with described silicon melting unit via running channel;
Wherein, when melting described raw silicon, the comb-like pattern that described first gun is arranged towards described running channel with head by described first electron beam irradiation in described silicon melting unit, and by linear for described first electron beam back and forth patterned illumination to described running channel, and when making described silicon remain on molten state by described second electron beam of irradiation, described second electron beam is irradiated to described unidirectional solidification unit with composite circular or spirality pattern by described second electron beam gun.
10. method for manufacturing polycrystalline silicon according to claim 9, wherein, described raw silicon has the purity of 2N and the median size of 1 to 2mm.
11. method for manufacturing polycrystalline silicon according to claim 9, wherein, the step of described supply dusty raw materials silicon comprises and utilizes described first gun to remove volatile impunty in described raw silicon under vacuo.
12. method for manufacturing polycrystalline silicon according to claim 11, wherein, are included in metallic impurity in described molten silicon in the process of setting of described molten silicon, move to the top of described molten silicon along solid/liquid interfaces.
13. method for manufacturing polycrystalline silicon according to claim 9, wherein, when melting described raw silicon, described first gun accelerates and accumulates described first electron beam, to reach 4000kW/m
2or lower energy.
14. method for manufacturing polycrystalline silicon according to claim 9, wherein, when making described silicon remain on molten state by described second electron beam of irradiation, described second electron beam gun accelerates described second electron beam and accumulates, to reach 1000 to 2000kW/m
2energy.
15. method for manufacturing polycrystalline silicon according to claim 9, wherein, when melting described raw silicon, described first gun accelerates and accumulates described first electron beam, to reach 4000kW/m
2or lower energy, and when making described silicon remain on molten state by described second electron beam of irradiation, described second electron beam gun accelerates described second electron beam and accumulates, to reach 1000 to 2000kW/m
2energy.
16. method for manufacturing polycrystalline silicon according to claim 9, wherein, transmit described molten silicon, simultaneously by utilizing the second electron beam gun to make described silicon remain on molten state molten silicon described in the second electron beam irradiation.
17. method for manufacturing polycrystalline silicon according to claim 16, wherein, described starting block declines with the speed of 0.005 to 0.05mm/s.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62260710A (en) * | 1986-05-06 | 1987-11-13 | Osaka Titanium Seizo Kk | Casting of polycrystalline silicon semiconductor |
| CN102126726A (en) * | 2011-01-29 | 2011-07-20 | 大连隆田科技有限公司 | Method and equipment for efficiently purifying polysilicon powder by utilizing electron beams |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62260710A (en) * | 1986-05-06 | 1987-11-13 | Osaka Titanium Seizo Kk | Casting of polycrystalline silicon semiconductor |
| CN102126726A (en) * | 2011-01-29 | 2011-07-20 | 大连隆田科技有限公司 | Method and equipment for efficiently purifying polysilicon powder by utilizing electron beams |
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