CN103413994A - X-band high-suppression micro band-pass filter - Google Patents
X-band high-suppression micro band-pass filter Download PDFInfo
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- CN103413994A CN103413994A CN201310332118XA CN201310332118A CN103413994A CN 103413994 A CN103413994 A CN 103413994A CN 201310332118X A CN201310332118X A CN 201310332118XA CN 201310332118 A CN201310332118 A CN 201310332118A CN 103413994 A CN103413994 A CN 103413994A
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Abstract
The invention discloses an X-band high-suppression micro band-pass filter comprising a ceramic substrate, an upper surface metal wall, a lower surface metal wall, two middle layer metal walls, a side metal wall, a metal post wall, eight plane metal plates, eight metalized through holes, eight through holes and an input and output port. The X-band high-suppression micro band-pass filter has the remarkable advantages of being wide in frequency band coverage, little in insertion loss, good in frequency selectivity, good in harmonic suppression characteristic, simple in circuit structure, good in anti-electromagnetic interference performance, good in controllability, high in yield and the like. The X-band high-suppression micro band-pass filter has wide application prospect in radars of various frequency bands, communication and high-speed data wireless communication in the future.
Description
Technical field
The present invention relates to a kind of filter, particularly the high restraining band pass filter of a kind of X-band.
Background technology
Development along with systems such as microwave and millimeter wave communication, radars, especially the continuous miniaturization of microwave and millimeter wave communication module in ambulatory handheld formula wireless communication terminal, individual soldier's satellite mobile communication terminal, military and civilian multimode multiplex communication terminal, airborne, missile-borne, aerospace communication system, band pass filter is as the crucial electronic unit in corresponding wave band reception and transmitting branch, and low-loss and high restraining microwave band-pass filter are one important developing direction.The key technical indexes of describing this component capabilities has: passband operating frequency range, stop-band frequency scope, passband input/output voltage standing-wave ratio, passband insertion loss, stopband attenuation, form factor, insertion phase shift and delay/frequency characteristic, temperature stability, volume, weight, reliability etc.Filter with the conventional method design, all exist volume and the larger shortcoming of insertion loss as hair clip type filter construction, strip lines configuration etc., for requiring harsh application scenario often can't use.
LTCC is a kind of Electronic Encapsulating Technology, adopts the multi-layer ceramics technology, passive component can be built in to medium substrate inside, also active element can be mounted on to substrate surface simultaneously and make passive/active integrated functional module.The LTCC technology all shows many merits at cost, integration packaging, wiring live width and distance between centers of tracks, Low ESR metallization, design diversity and the aspects such as flexibility and high frequency performance, has become the mainstream technology of passive integration.It has high Q value, is convenient to embedded passive device, and thermal diffusivity is good, and reliability is high, high temperature resistant, and the advantages such as punching shake, utilize the LTCC technology, can well process size little, and precision is high, and tight type is good, the microwave device that loss is little.
Summary of the invention
The object of the present invention is to provide that pass-band loss is low, frequency selectivity good, horizontal area is little, reliability is high, cost is low, easy to use.
The technical scheme that realizes the object of the invention is: the high restraining band pass filter of a kind of X-band, comprise ceramic substrate, upper surface metallic walls, lower surface metallic walls, middle double layer of metal wall and side metallic walls, metal post jamb, 8 planar metal plate, 8 plated-through holes, 8 via holes, input/output port.
Compared with prior art, its remarkable advantage is in the present invention: (1) in-band insertion loss is little; (2) frequency selectivity is good, and Out-of-band rejection is high; (3) on technique, be easy to realize that (4) production cost reduces.
The accompanying drawing explanation
Fig. 1 is the structure chart of the high restraining band pass filter of X-band of the present invention.
Fig. 2 is the metal column wall construction end view of the high restraining band pass filter of X-band of the present invention.
Fig. 3 is the amplitude-versus-frequency curve of the high restraining band pass filter of X-band of the present invention.
Embodiment:
Below in conjunction with accompanying drawing, the present invention is described in further detail.
In conjunction with Fig. 1, Fig. 2, the high restraining band pass filter of X-band of the present invention, comprise the first ceramic substrate S1, the second ceramic substrate S2, the 3rd ceramic substrate S3, the 4th ceramic substrate S4, the 5th ceramic substrate S5, upper surface metallic walls G1, the second metallic walls G2, the 3rd metallic walls G3, lower surface metallic walls G4, the first metal post jamb G01, the second metal post jamb G02, the 3rd metal post jamb G03, the first planar metal plate C1, the second planar metal plate C2, the 3rd planar metal plate C3, the face metallic plate C4 of Siping City, the 5th planar metal plate C5, the 6th planar metal plate C6, the 7th planar metal plate C7, the 8th planar metal plate C8, the first via hole gap1, the second via hole gap2, the 3rd via hole gap3, the 4th via hole gap4, the 5th via hole gap5, the 6th via hole gap6, the 7th via hole gap7, the 8th via hole gap8, input port P1, output port P2, the first plated-through hole L1, the second plated-through hole L2, the 3rd plated-through hole L3, the 4th plated-through hole L4, the 5th plated-through hole L5, the 6th plated-through hole L6, the 7th plated-through hole L7, the 8th plated-through hole L8.The first plated-through hole L1, the 4th plated-through hole L4, the 5th plated-through hole L5, the 8th plated-through hole L8 mono-end all with upper surface metallic walls G1, another termination of the first plated-through hole L1 the first planar metal plate C1, another termination of the second plated-through hole L2 the second planar metal plate C2, the 3rd another termination of plated-through hole L3 the 3rd planar metal plate C3, the face metallic plate C4 of another termination Siping City of the 4th plated-through hole L4, the 5th another termination of plated-through hole L5 the 5th planar metal plate C5, the 6th another termination of plated-through hole L6 the 6th planar metal plate C6, the 7th another termination of plated-through hole L7 the 7th planar metal plate C7, the 8th another termination of plated-through hole L8 the 8th planar metal plate C8.The first plated-through hole L1 vertically passes the first via hole gap1, the second plated-through hole L2 vertically passes the second via hole gap2, the 3rd plated-through hole L3 vertically passes the 3rd via hole gap3, the 4th plated-through hole L4 vertically passes the 4th via hole gap4, the 5th plated-through hole L5 vertically passes the 5th via hole gap5, the 6th plated-through hole L6 vertically passes the 6th via hole gap6, the 7th plated-through hole L7 vertically passes the 7th via hole gap7, the 8th plated-through hole L8 vertically passes the 8th via hole gap8.It is upper that the first via hole gap1, the 4th via hole gap4, the 5th via hole gap5, the 8th via hole gap8 are positioned at the second metallic walls G2, and the second via hole gap2, the 3rd via hole gap3, the 6th via hole gap6, the 7th via hole gap7 are positioned on the 3rd metallic walls G3.
The first ceramic substrate S1, the second ceramic substrate S2, the 3rd ceramic substrate S3, the 4th tetra-of ceramic substrate S4 ceramic substrate vertical parallel, the first ceramic substrate S1 upper surface is upper surface metallic walls G1, the second ceramic substrate S2 upper surface is the second metallic walls G2, the 3rd ceramic substrate S3 upper surface has the first planar metal plate C1, the face metallic plate C4 of Siping City, the 5th planar metal plate C5, the 8th planar metal plate C8, the 4th ceramic substrate S4 upper surface has the second planar metal plate C2, the 3rd planar metal plate C3, the 6th planar metal plate C6, the 7th planar metal plate C7, the 5th ceramic substrate S5 upper surface is the 3rd metallic walls G3, lower surface is the 4th metallic walls G4.The first metal post jamb G01 mono-termination the 4th metallic walls G4, other termination second a metallic walls G2.Second metal post jamb G02 mono-termination the second metallic walls G2, other termination first a metallic walls G1.The 3rd metal post jamb G03 mono-termination the first metallic walls G1, an other termination the 3rd metallic walls G3.The first metal post jamb G01, the second metal post jamb G02 are on same plane, and the first metal post jamb G01, the second metal post jamb G02 are vertical with the 3rd metal post jamb G03.
The first plated-through hole L1 and the first planar metal plate C1 form the first resonance level R1, the second plated-through hole L2 and the second planar metal plate C2 form the second resonance level R2, the 3rd plated-through hole L3 and the 3rd planar metal plate C3 form the 3rd resonance level R3, the 4th plated-through hole L4 and the face metallic plate C4 of Siping City form the 4th resonance level R4, the 5th plated-through hole L5 and the 5th planar metal plate C5 form the 5th resonance level R5, the 6th plated-through hole L6 and the 6th planar metal plate C6 form the 6th resonance level R6, the 7th plated-through hole L7 and the 7th planar metal plate C7 form the 7th resonance level R7, the 8th plated-through hole L8 and the 8th planar metal plate C8 form the 8th resonance level R8, between the first planar metal plate C1 and the second planar metal plate C2, be the first coupling capacitance C12, between the second plated-through hole L2 and the 3rd plated-through hole L3, be the second coupling inductance L23, between the 3rd planar metal plate C3 and the face metallic plate C4 of Siping City, be the 3rd coupling capacitance C34, between the 4th plated-through hole L4 and the 5th plated-through hole L5, be the 4th coupling inductance L45, between the 5th planar metal plate C5 and the 6th planar metal plate C6, be the 5th coupling capacitance C56, between the 5th plated-through hole L6 and the 6th plated-through hole L7, be the 6th coupling inductance L67, between the 7th planar metal plate C7 and the 8th planar metal plate C8, be the 7th coupling capacitance C78.
In conjunction with Fig. 1, the high restraining band pass filter of X-band of the present invention, comprise eight resonance level R1, R2, R3 and R4, R5, R6, R7, R8.The first resonance level R1 and the second resonance level R2 are by the first coupling capacitance C12 coupling, the second resonance level R2 and the 3rd resonance level R3 are by the second coupling inductance L23 coupling, the 3rd resonance level R3 and the 4th resonance level R4 are by the 3rd coupling capacitance C34 coupling, the 4th resonance level R4 and the 5th resonance level R5 are by the 4th coupling inductance L45 coupling, the 5th resonance level R5 and the 6th resonance level R6 are by the 5th coupling capacitance C56 coupling, the 6th resonance level R6 and the 7th resonance level R7 are by the 6th coupling inductance L67 coupling, the 7th resonance level R7 and the 8th resonance level R8 are by the 7th coupling capacitance C78 coupling.
In conjunction with Fig. 1, Fig. 2, in the high restraining band pass filter of X-band of the present invention, by adjusting the first plated-through hole L1 length and the first planar metal plate C1 size, adjust the resonance frequency of the first resonance level R1, by adjusting the second plated-through hole L2 length and the second planar metal plate C2 size, adjust the resonance frequency of the second resonance level R2, by adjusting the 3rd plated-through hole L3 length and the 3rd planar metal plate C3 size, adjust the resonance frequency of the 3rd resonance level R3, by adjusting the 4th plated-through hole L4 length and Siping City's face metallic plate C4 size, adjust the resonance frequency of the 4th resonance level R4, by adjusting the 5th plated-through hole L5 length and the 5th planar metal plate C5 size, adjust the resonance frequency of the 5th resonance level R5, by adjusting the 6th plated-through hole L6 length and the 6th planar metal plate C6 size, adjust the resonance frequency of the 6th resonance level R6, by adjusting the 7th plated-through hole L7 length and the 7th planar metal plate C7 size, adjust the resonance frequency of the 7th resonance level R7, by adjusting the 8th plated-through hole L8 length and the 8th planar metal plate C8 size, adjust the resonance frequency of the 8th resonance level R8, the size that relative distance by adjusting the first planar metal plate C1 and the second planar metal plate C2 and area change the first coupling capacitance C12, by the relative distance of adjusting the second plated-through hole L2 and the 3rd plated-through hole L3, change the size of the second coupling inductance L23, by the relative distance of adjusting the 3rd plane capacitance plate C3 and the face electric capacity version C4 of Siping City and the size that area changes the 3rd coupling capacitance C34, by the relative distance of adjusting the 4th plated-through hole L4 and the 5th plated-through hole L5, change the size of the 4th coupling inductance L45, the size that relative distance by adjusting the 5th planar metal plate C5 and the 6th planar metal plate C6 and area change the 5th coupling capacitance C56, by the relative distance of adjusting the 6th plated-through hole L6 and the 7th plated-through hole L7, change the size of the 6th coupling inductance L67, the size that relative distance by adjusting the 7th planar metal plate C7 and the 8th planar metal plate C8 and area change the 7th coupling capacitance C78.
The operation principle of the high restraining band pass filter of X-band of the present invention is summarized as follows: the broadband microwave signal enters the first resonance level R1 from input port P1, microwave signal in passband is coupled to the second resonance level R2 by the first coupling capacitance C12, through the second coupling inductance L23, be coupled to the 3rd resonance level R3, through the 3rd coupling, hold C34 and be coupled to the 4th resonance level R4, through the 4th coupling inductance L45, be coupled to the 5th resonance level R5, through the 5th coupling, hold C56 and be coupled to the 6th resonance level R6, through the 6th coupling inductance L67, be coupled to the 7th resonance level R7, finally by crossing the 7th coupling appearance C78, be coupled to the 8th resonance level R8 to output port P2, microwave signal outside passband is successively at eight resonance level R1, R2, R3, R4, R5, R6, R7, the resonance frequency of R8 decays outward.By changing the height of the first plated-through hole L1, the second plated-through hole L2, the 3rd plated-through hole L3, the 4th plated-through hole L4, the 5th plated-through hole L5, the 6th plated-through hole L6, the 7th plated-through hole L7, the 8th plated-through hole L8, the resonance frequency of resonance level can be finely tuned, the width of passband can be changed by the width that changes the first coupling capacitance C12, the second coupling inductance L23, the 3rd coupling capacitance C34, the 4th coupling inductance L45, the 5th coupling capacitance C56, the 6th coupling inductance L67, the 7th coupling capacitance C78.
The size of the high restraining band pass filter of X-band of the present invention is only 8.6mm * 5.6mm * 2.7mm, its performance can be as can be seen from Figure 2, pass band width is 9.16GHz ~ 9.65GHz, in passband, minimum insertion loss is 1.68dB, return loss is better than 20dB, lower sideband suppresses to be better than 60dB, and upper sideband suppresses to be better than 50dB.
Claims (4)
1. the high restraining band pass filter of X-band, is characterized in that: comprise the first ceramic substrate (S1), the second ceramic substrate (S2), the 3rd ceramic substrate (S3), the 4th ceramic substrate (S4), the 5th ceramic substrate (S5), upper surface metallic walls (G1), the second metallic walls (G2), the 3rd metallic walls (G3), lower surface metallic walls (G4), the first plated-through hole wall (G01), the second plated-through hole wall (G02), the 3rd plated-through hole wall (G03), the first planar metal plate (C1), the second planar metal plate (C2), the 3rd planar metal plate (C3), Siping City's face metallic plate (C4), the 5th planar metal plate (C5), the 6th planar metal plate (C6), the 7th planar metal plate (C7), the 8th planar metal plate (C8), input port (P1), output port (P2), the first via hole (gap1), the second via hole (gap2), the 3rd via hole (gap3), the 4th via hole (gap4), the 5th via hole (gap5), the 6th via hole (gap6), the 7th via hole (gap7), the 8th via hole (gap8), input port (P1), output port (P2), the first plated-through hole (L1), the second plated-through hole (L2), the 3rd plated-through hole (L3), the 4th plated-through hole (L4), the 5th plated-through hole (L5), the 6th plated-through hole (L6), the 7th plated-through hole (L7), the 8th plated-through hole (L8), the first plated-through hole (L1), the 4th plated-through hole (L4), the 5th plated-through hole (L5), the 8th plated-through hole (L8) end all with upper surface metallic walls (G1), another termination first planar metal plate (C1) of the first plated-through hole (L1), another termination second planar metal plate (C2) of the second plated-through hole (L2), the 3rd another termination of plated-through hole (L3) the 3rd planar metal plate (C3), the 4th another termination Siping City face metallic plate (C4) of plated-through hole (L4), the 5th another termination of plated-through hole (L5) the 5th planar metal plate (C5), the 6th another termination of plated-through hole (L6) the 6th planar metal plate (C6), the 7th another termination of plated-through hole (L7) the 7th planar metal plate (C7), the 8th another termination of plated-through hole (L8) the 8th planar metal plate (C8), the first plated-through hole (L1) vertically passes the first via hole (gap1), the second plated-through hole (L2) vertically passes the second via hole (gap2), the 3rd plated-through hole (L3) vertically passes the 3rd via hole (gap3), the 4th plated-through hole (L4) vertically passes the 4th via hole (gap4), the 5th plated-through hole (L5) vertically passes the 5th via hole (gap5), the 6th plated-through hole (L6) vertically passes the 6th via hole (gap6), the 7th plated-through hole (L7) vertically passes the 7th via hole (gap7), the 8th plated-through hole (L8) vertically passes the 8th via hole (gap8), it is upper that the first via hole (gap1), the 4th via hole (gap4), the 5th via hole (gap5), the 8th via hole (gap8) are positioned at the second metallic walls (G2), and the second via hole (gap2), the 3rd via hole (gap3), the 6th via hole (gap6), the 7th via hole (gap7) are positioned on the 3rd metallic walls (G3).
2. the high restraining band pass filter of X-band according to claim 1, it is characterized in that: the first ceramic substrate (S1), the second ceramic substrate (S2), the 3rd ceramic substrate (S3), four ceramic substrates of the 4th ceramic substrate (S4) are parallel, the first ceramic substrate (S1) upper surface is upper surface metallic walls (G1), the second ceramic substrate (S2) upper surface is the second metallic walls (G2), the 3rd ceramic substrate (S3) upper surface has the first planar metal plate (C1), Siping City's face metallic plate (C4), the 5th planar metal plate (C5), the 8th planar metal plate (C8), the 4th ceramic substrate (S4) upper surface has the second planar metal plate (C2), the 3rd planar metal plate (C3), the 6th planar metal plate (C6), the 7th planar metal plate (C7), the 5th ceramic substrate (S5) upper surface is the 3rd metallic walls (G3), lower surface is the 4th metallic walls (G4), the first metal post jamb (G01) termination the 4th metallic walls (G4), other termination second metallic walls (G2), second metal post jamb (G02) termination second metallic walls (G2), other termination first metallic walls (G1), the 3rd metal post jamb (G03) termination first metallic walls (G1), an other termination the 3rd metallic walls (G3), the first metal post jamb (G01), the second metal post jamb (G02) be on same plane, and the first metal post jamb (G01), the second metal post jamb (G02) are vertical with the 3rd metal post jamb (G03).
3. the high restraining band pass filter of X-band according to claim 1, it is characterized in that: the first plated-through hole (L1) and the first planar metal plate (C1) form the first resonance level (R1), the second plated-through hole (L2) and the second planar metal plate (C2) form the second resonance level (R2), the 3rd plated-through hole (L3) and the 3rd planar metal plate (C3) form the 3rd resonance level (R3), the 4th plated-through hole (L4) and Siping City's face metallic plate (C4) form the 4th resonance level (R4), the 5th plated-through hole (L5) and the 5th planar metal plate (C5) form the 5th resonance level (R5), the 6th plated-through hole (L6) and the 6th planar metal plate (C6) form the 6th resonance level (R6), the 7th plated-through hole (L7) and the 7th planar metal plate (C7) form the 7th resonance level (R7), the 8th plated-through hole (L8) and the 8th planar metal plate (C8) form the 8th resonance level (R8).
4. the high restraining band pass filter of X-band according to claim 1, it is characterized in that: input port (P1) is connected with the first planar metal plate (C1) end, between the first planar metal plate (C1) and the second planar metal plate (C2), it is capacitive coupling, between the second plated-through hole (L2) and the 3rd plated-through hole (L3), it is inductance coupling high, between the 3rd planar metal plate (C3) and Siping City's face metallic plate (C4), it is capacitive coupling, between the 4th plated-through hole (L4) and the 5th plated-through hole (L5), it is inductance coupling high, between the 5th planar metal plate (C5) and the 6th planar metal plate (C6), it is capacitive coupling, between the 5th plated-through hole (L6) and the 6th plated-through hole (L7), it is inductance coupling high, between the 7th planar metal plate (C7) and the 8th planar metal plate (C8), it is capacitive coupling, the 8th planar metal plate (C8) end is connected with output port (P2).
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| CN201310332118.XA CN103413994B (en) | 2013-08-01 | 2013-08-01 | X-band high-suppression micro band pass filter |
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| CN201310332118.XA CN103413994B (en) | 2013-08-01 | 2013-08-01 | X-band high-suppression micro band pass filter |
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| CN103413994B CN103413994B (en) | 2015-09-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024020768A1 (en) * | 2022-07-26 | 2024-02-01 | 京东方科技集团股份有限公司 | Filter circuit, filter and manufacturing method therefor, and electronic device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200610265A (en) * | 2004-09-02 | 2006-03-16 | Darfon Electronics Corp | Bandpass filters |
| US20060181370A1 (en) * | 2005-02-16 | 2006-08-17 | Samsung Electro-Mechanics Co., Ltd. | Laminated filter with improved stop band attenuation |
| CN201562743U (en) * | 2009-09-19 | 2010-08-25 | 深圳市麦捷微电子科技股份有限公司 | Novel LTCC microwave band-pass filter |
| CN103078158A (en) * | 2013-01-28 | 2013-05-01 | 南京理工大学 | L-band miniature low-pass filter |
-
2013
- 2013-08-01 CN CN201310332118.XA patent/CN103413994B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200610265A (en) * | 2004-09-02 | 2006-03-16 | Darfon Electronics Corp | Bandpass filters |
| US20060181370A1 (en) * | 2005-02-16 | 2006-08-17 | Samsung Electro-Mechanics Co., Ltd. | Laminated filter with improved stop band attenuation |
| CN201562743U (en) * | 2009-09-19 | 2010-08-25 | 深圳市麦捷微电子科技股份有限公司 | Novel LTCC microwave band-pass filter |
| CN103078158A (en) * | 2013-01-28 | 2013-05-01 | 南京理工大学 | L-band miniature low-pass filter |
Non-Patent Citations (2)
| Title |
|---|
| YONG-SHENG DAI ET AL.: "A miniaturized combline LTCC BPF with high-order harmonics A miniaturized combline LTCC BPF with high-order harmonics", 《PROCEEDINGS OF THE ASIA-PACIFIC MICROWAVE CONFERENCE 2011》, 31 December 2011 (2011-12-31), XP032152805 * |
| 戴永胜 等: "高次谐波抑制微型滤波器研究", 《南京理工大学学报》, vol. 36, no. 5, 31 October 2012 (2012-10-31) * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024020768A1 (en) * | 2022-07-26 | 2024-02-01 | 京东方科技集团股份有限公司 | Filter circuit, filter and manufacturing method therefor, and electronic device |
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Inventor after: Dai Yongsheng Inventor after: Wu Yingchun Inventor after: Wu Jianxing Inventor after: Chen Xiangzhi Inventor after: Li Yan Inventor after: Chen Long Inventor before: Wu Yingchun Inventor before: Wu Jianxing Inventor before: Chen Xiangzhi Inventor before: Li Yan Inventor before: Chen Long Inventor before: Dai Yongsheng |
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Free format text: CORRECT: INVENTOR; FROM: WU YINGCHUN WU JIANXING CHEN XIANGZHI LI YAN CHEN LONG DAI YONGSHENG TO: DAI YONGSHENG WU YINGCHUN WU JIANXING CHEN XIANGZHI LI YAN CHEN LONG |
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