CN103401415B - The soft switch topology structure of single-phase semi-conductor electricity force transducer - Google Patents
The soft switch topology structure of single-phase semi-conductor electricity force transducer Download PDFInfo
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- CN103401415B CN103401415B CN201310345893.9A CN201310345893A CN103401415B CN 103401415 B CN103401415 B CN 103401415B CN 201310345893 A CN201310345893 A CN 201310345893A CN 103401415 B CN103401415 B CN 103401415B
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- diode
- power switching
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- voltage source
- force transducer
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- 230000005611 electricity Effects 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 238000001914 filtration Methods 0.000 claims abstract description 5
- 239000000446 fuel Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 13
- 210000004027 cell Anatomy 0.000 description 6
- 238000010248 power generation Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012913 prioritisation Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
Present invention is disclosed a kind of soft switch topology structure of single-phase semi-conductor electricity force transducer.Its technical characterstic introduces auxiliary resonance unit on the basis of traditional single phase hard switching power converter, accessed in the single-phase H bridge of hard switching, composition Sofe Switch semi-conductor electricity force transducer, after utilizing this improvement, power converter carries out DC-DC or DC-AC conversion to the input signal of input side direct voltage source, then exports load to after filtering again.This auxiliary resonance unit realizes the improvement to power converter by additional or integrated switching power devices and internal body diodes.Application technical solution of the present invention, compares to and uses traditional single phase hard switching power converter, by introducing auxiliary resonance unit, significantly improve the efficiency of power converter, and effectively can suppress electromagnetic interference.
Description
Technical field
The present invention relates to a kind of soft switch topology structure of Monophase electric power converter, particularly relate to a kind of high efficiency, the DC-DC converter of low EMI or the soft switch topology structure of DC-AC converter, be applied to photovoltaic generation, wind power generation, fuel cell power generation, communication power supply, wherein generating comprise grid-connected, from net or hybrid.
Background technology
In recent years, along with the fast development of semiconductor power device and singlechip technology, the application of the semi-conductor electricity force transducers such as DC-DC, DC-AC is more and more extensive, particularly photovoltaic generation, wind power generation, fuel cell power generation, communication power supply etc.Due to above-mentioned power converter many employings regenerative resource (as photovoltaic cell component), cost is all higher, and belongs to the product for civilian use, therefore higher to its power converter efficiency requirements, also tighter to the restriction of its electromagnetic interference.As shown in Figure 1, in figure, terminal C's traditional single-phase hard switching power converter should connect together with terminal N, convenient in order to describe below herein, specially separately represents.Illustrate visible, in the single-phase H bridge of hard switching of this single-phase hard switching power converter, its switching power devices T
1collector electrode, diode D
1negative electrode, diode D
2negative electrode and device for power switching T
2collector electrode and input side direct voltage source E
dpositive pole be connected to terminals P.And defining terminal A is device for power switching T
1emitter and device for power switching T
3contact between collector electrode; Terminal B is device for power switching T
2emitter and device for power switching T
4contact between collector electrode.The signal converted by terminal A, B output power, to filter, exports load to after filtering high frequency harmonic components wherein then again.
But this traditional single phase hard switching power converter in actual applications, and conversion efficiency is relatively poor, electromagnetic interference strength is also comparatively large, is difficult to the relevant authentication requirement of the competent world, the home products market access.
Summary of the invention
In view of the defect existing for above-mentioned traditional hard switching power converter, the object of the invention is the soft switch topology structure proposing a kind of single-phase semi-conductor electricity force transducer, to improving conversion efficiency and suppressing electromagnetic interference.
The technical solution that the present invention realizes above-mentioned purpose is: the soft switch topology structure of single-phase semi-conductor electricity force transducer, relates to input side direct voltage source E
d, the single-phase H bridge of hard switching, filter and load, described input side direct voltage source E
dinput signal via Sofe Switch semi-conductor electricity force transducer DC-DC or DC-AC conversion transport to filter, and transport to load via filter filtering high frequency harmonic components, it is characterized in that: described soft switch topology structure is the auxiliary resonance unit set between terminal A, B, C, N at the single-phase H bridge of hard switching, and wherein terminal A is device for power switching T
1emitter and device for power switching T
3contact between collector electrode, terminal B is device for power switching T
2emitter and device for power switching T
4contact between collector electrode, terminal C is device for power switching T
3emitter and device for power switching T
4contact between emitter, terminal N be off from terminal C and with input side direct voltage source E
dthe contact that negative pole is connected.
Further, described auxiliary resonance unit is by device for power switching T
5~ T
7, diode D
5~ D
7, diode D
8~ D
11, inductance L
r1~ L
r2, electric capacity C
r1~ C
r3composition, wherein device for power switching T
5emitter and diode D
5anode, device for power switching T
7emitter, diode anode D
7, electric capacity C
r3one end, device for power switching T
6emitter and diode D
6anode be connected to terminal N; Device for power switching T
5collector electrode and diode D
5negative electrode, diode D
10anode, inductance L
r1one end be connected; Device for power switching T
6collector electrode and diode D
6negative electrode, diode D
11anode, inductance L
r2one end be connected; Device for power switching T
7collector electrode and diode D
7negative electrode, electric capacity C
r3the other end, inductance L
r1the other end, inductance L
r2the other end, electric capacity C
r1one end, electric capacity C
r2one end be connected to terminal C; Diode D
10negative electrode and diode D
8anode, electric capacity C
r1the other end be connected; Diode D
11negative electrode and diode D
9anode, electric capacity C
r2the other end be connected; Diode D
8cathode connecting terminal A; Diode D
9cathode connecting terminal B.
Further, described device for power switching is insulated gate bipolar transistor IGBT, mos field effect transistor MOSFET, thyristor SCR or turn-off thyristor GTO.
Further, described diode be external diode or device for power switching body in diode.
The soft switch topology structure of single-phase semi-conductor electricity force transducer according to claim 1, is characterized in that: described input side direct voltage source E
dfor the direct voltage source generated through the direct voltage source of rectification, storage battery, fuel cell, photovoltaic cell or wind-powered electricity generation.
Further, described load is resistive load, inductive load, capacitive load, direct voltage source E or alternating-current voltage source e.
The application implementation of technical solution of the present invention, compares to and uses traditional single phase hard switching power converter, by introducing auxiliary resonance unit, effectively improve the efficiency of power converter, and significantly can suppress electromagnetic interference.
Accompanying drawing explanation
Fig. 1 is the hard switching main circuit topological structure schematic diagram of traditional single phase semi-conductor electricity force transducer.
Fig. 2 is the soft-switch main circuit topological structure schematic diagram of the single-phase semi-conductor electricity force transducer of the present invention.
Fig. 3 is the structural representation of auxiliary resonance unit one preferred embodiment in Fig. 2.
Fig. 4 is the soft switch topology principle schematic after Fig. 2 composition graphs 3.
Fig. 5 is the Control timing sequence figure of soft switch topology shown in Fig. 4.
Fig. 6 is T in soft switch topology shown in Fig. 4
1, T
4, T
5, T
7control timing sequence figure during work.
Fig. 7 is the enlarged diagram of part A in Fig. 6.
Fig. 8 is T in soft switch topology shown in Fig. 4
1, T
4, T
5, T
7simulation waveform during work.
Fig. 9 is mode 0(t
0current loop schematic diagram before).
Figure 10 is mode 1(t
0~ t
1) current loop schematic diagram.
Figure 11 is mode 2(t
1~ t
2) current loop schematic diagram.
Figure 12 is mode 3(t
2~ t
3) current loop schematic diagram.
Figure 13 is mode 4(t
3~ t
4) in charging time current loop schematic diagram.
Figure 14 is mode 4(t
3~ t
4) the middle current loop schematic diagram completely that charges.
Figure 15 is mode 5(t
4~ t
5) current loop schematic diagram.
Figure 16 is mode 6(t
5~ t
0) current loop schematic diagram.
Embodiment
Below in conjunction with embodiment accompanying drawing, the specific embodiment of the present invention is further elaborated, is easier to make technical scheme of the present invention understand, grasp.
The present invention is intended to the soft switch topology structure proposing a kind of single-phase semi-conductor electricity force transducer, to improving conversion efficiency and suppressing electromagnetic interference.As shown in Figures 2 to 4, be that the soft switch topology structural representation of the single-phase semi-conductor electricity force transducer of the present invention and the details of auxiliary resonance unit thereof are shown.From diagram: this single-phase semi-conductor electricity force transducer relates to input side direct voltage source E
d, the single-phase H bridge of hard switching, filter and load, this input side direct voltage source E
dinput signal convert via Sofe Switch semi-conductor electricity force transducer DC-DC or DC-AC after transport to filter, and transport to load via after filter filtering high frequency harmonic components.As the breakthrough feature being different from conventional transducers shown in Fig. 1, this power converter introduces soft switch topology structure, and this soft switch topology structure is the auxiliary resonance unit set between terminal A, B, C, N at the single-phase H bridge of hard switching, wherein terminal A is device for power switching T
1emitter and device for power switching T
3contact between collector electrode, terminal B is device for power switching T
2emitter and device for power switching T
4contact between collector electrode, terminal C is device for power switching T
3emitter and device for power switching T
4contact between emitter, terminal N be off from terminal C and with input side direct voltage source E
dthe contact that negative pole is connected.
Moreover this auxiliary resonance unit is by device for power switching T
5~ T
7, diode D
5~ D
7, diode D
8~ D
11, inductance L
r1~ L
r2, electric capacity C
r1~ C
r3(wherein electric capacity C
r3can be external capacitor, also can be device for power switching T
7with diode D
7knot between electric capacity) composition, wherein device for power switching T
5emitter and diode D
5anode, device for power switching T
7emitter, diode anode D
7, electric capacity C
r3one end, device for power switching T
6emitter and diode D
6anode be connected to terminal N; Device for power switching T
5collector electrode and diode D
5negative electrode, diode D
10anode, inductance L
r1one end be connected; Device for power switching T
6collector electrode and diode D
6negative electrode, diode D
11anode, inductance L
r2one end be connected; Device for power switching T
7collector electrode and diode D
7negative electrode, electric capacity C
r3the other end, inductance L
r1the other end, inductance L
r2the other end, electric capacity C
r1one end, electric capacity C
r2one end be connected to terminal C; Diode D
10negative electrode and diode D
8anode, electric capacity C
r1the other end be connected; Diode D
11negative electrode and diode D
9anode, electric capacity C
r2the other end be connected; Diode D
8cathode connecting terminal A; Diode D
9cathode connecting terminal B.
As optional multiple prioritization scheme, this device for power switching T
1~ T
7for insulated gate bipolar transistor IGBT, mos field effect transistor MOSFET, thyristor SCR or turn-off thyristor GTO.This diode D
1~ D
7for diode in the body of external diode or device for power switching.This input side direct voltage source E
dfor the direct voltage source generated through the direct voltage source of rectification, storage battery, fuel cell, photovoltaic cell or wind-powered electricity generation.This load is resistive load, inductive load, capacitive load, direct voltage source E or alternating-current voltage source e.
Based on the preferred embodiment shown in Fig. 4 in detail, the control mode of its principle is below described in detail.As shown in Fig. 5 to Fig. 8, to generate electricity by way of merging two or more grid systems, the load now in Fig. 4 is the alternating-current voltage source e of electrical network.At the positive half period of electrical network, in figure, only there is T
1, T
4, T
5, T
7at work (now T
2, T
3, T
6all turn off, separately do not carry later).Fig. 5 is the Control timing sequence figure of soft switch topology shown in Fig. 4.T shown in Fig. 6
1, T
5, T
7, T
4control mode during work.Fig. 7 is the partial enlargement (comparison diagram 8) of part A control signal in Fig. 6.Fig. 8 is T
1, T
4, T
5, T
7simulation waveform during work (gets E
d=400V), wherein, V
g-T1, V
g-T5, V
g-T7be respectively T
1, T
5, T
7drive singal; V
-T1, V
-T5, V
-T7be respectively T
1, T
5, T
7voltage between C, E; i
-T1, i
-T5, i
-T7be respectively T
1, T
5, T
7electric current; V
-Cr1for the voltage on electric capacity.
Below with a switch periods (t
0~ t
5) analyze the operating principle of main circuit for example, have 7 mode: mode 0 ~ mode 6; For briefly just, only refer to related device with the device number of device for power switching or diode below.
Mode 0(t
0before): T
1, T
5, T
7all turn off, only have T
4keep open-minded, inductance L
r1and L
r2along T
4, D
3afterflow, the fault offset stored to electrical network, this current i
flapproach as shown in Figure 9.Ignore T
4and D
3conduction voltage drop, then A, B 2 belong to same current potential, and are E
d/ 2=200V, so V
-T1, V
-T7be all 200V.
Mode 1(t
0~ t
1): t
0moment, T
1, T
5simultaneously open-minded, obvious i
lr1start from scratch and progressively increase, therefore T
1, T
5for zero current turning-on, as shown in Figure 10.Ignore T
1, T
4, D
3conduction voltage drop, then P, A, C, B 4 same current potentials are all E
d=400V, so T
7pressure drop V
-T7=400V.
Mode 2(t
1~ t
2): arrive t
1moment, i
lr1=i
fl, D3 turns off naturally, C
r3, L
r1between there is resonance, as shown in figure 11.C
r3on electric charge progressively transfer to L
r1in, i
lr1continue to increase, C
r3terminal voltage (that is T
7terminal voltage V
-T7) progressively drop to zero, now i
lr1=i
lf+ i
cr3.Work as C
r3when both end voltage is zero, diode D
7forward conduction, i
lr1=i
lf+ i
d7.
Mode 3(t
2~ t
3): t
2in the moment, trigger T
7, obvious T
7for no-voltage is open-minded, with mode 2, D
7continue conducting, as shown in figure 12.
Mode 4(t
3~ t
4): t
3in the moment, turn off T
5, then i
lr1through D
10to C
r1charging (C before this
r1terminal voltage be zero), due to T
7open-minded, therefore C, N are same current potential, then T
5shutoff be zero voltage turn-off, as shown in figure 13.T
5shutoff force i
lfall be transferred to T in zero voltage state
7in, therefore at T
5the shutoff initial stage, T
7in have individual peak current, i.e. i
lf.Along with i
lr1to C
r1charging, progressively rises, works as V
cr1rise to E
d(400V) time, D8 forward conduction, i
lr1in remaining energy discharge rapidly along D8 to electrical network, due to i
lfsubstantially constant, i
lr1electric discharge make, reduce rapidly, and even to zero, as shown in figure 14.
Mode 5(t
3~ t
4): along with i
lr1the reduction of electric discharge, i
t1, i
t7progressively increase again, to t
4moment, i
t1=i
t7=i
lf, and along with trigger impulse V
g-T1the difference of width increases to corresponding amplitude, as shown in figure 15.
Mode 6(t
4~ t
5): t
5in the moment, turn off T simultaneously
1, T
7, then i
lfalong C
r1, D
8afterflow, as shown in figure 16.Due to C
r1terminal voltage E
dfor (400V), so T
1and T
2all with zero voltage turn-off.Work as C
r1terminal voltage drop to zero after, D
3conducting, i
lfalong D3 afterflow, state has got back to again mode 0, as shown in Figure 9.Now the current potential of A, C, B is all E
d/ 2=200V, so T
1, T
7voltage between C, E be all 200V.
At the negative half-cycle of line voltage, corresponding to T in Fig. 4
2, T
3, T
6, T
7work, the positive half period of its principle and line voltage is just the same, and those skilled in the art work as to understand its control mode and operation process, therefore repeat no more.
For the positive half period of the next switch periods of line voltage, still by above-mentioned 7 mode running, circulate with this.Compare to and use traditional single phase hard switching power converter, by introducing auxiliary resonance unit, and this auxiliary resonance unit realizes the improvement to power converter by additional or integrated switching power devices and internal body diodes, effectively improve the efficiency of power converter, and significantly can suppress electromagnetic interference.
Claims (5)
1. the soft switch topology structure of single-phase semi-conductor electricity force transducer, relates to input side direct voltage source E
d, the single-phase H bridge of hard switching, filter and load, described input side direct voltage source E
dinput signal via Sofe Switch semi-conductor electricity force transducer DC-DC or DC-AC conversion transport to filter, and transport to load via filter filtering high frequency harmonic components, it is characterized in that: described soft switch topology structure is the auxiliary resonance unit set between terminal A, B, C, N at the single-phase H bridge of hard switching, and wherein terminal A is device for power switching T
1emitter and device for power switching T
3contact between collector electrode, terminal B is device for power switching T
2emitter and device for power switching T
4contact between collector electrode, terminal C is device for power switching T
3emitter and device for power switching T
4contact between emitter, terminal N be off from terminal C and with input side direct voltage source E
dthe contact that negative pole is connected; Described auxiliary resonance unit is by device for power switching T
5~ T
7, diode D
5~ D
7, diode D
8~ D
11, inductance L
r1~ L
r2, electric capacity C
r1~ C
r3composition, wherein device for power switching T
5emitter and diode D
5anode, device for power switching T
7emitter, diode D
7anode, electric capacity C
r3one end, IGBT device T
6emitter and diode D
6anode be connected to terminal N; Device for power switching T
5collector electrode and diode D
5negative electrode, diode D
10anode, inductance L
r1one end be connected; Device for power switching T
6collector electrode and diode D
6negative electrode, diode D
11anode, inductance L
r2one end be connected; Device for power switching T
7collector electrode and diode D
7negative electrode, electric capacity C
r3the other end, inductance L
r1the other end, inductance L
r2the other end, electric capacity C
r1one end, electric capacity C
r2one end be connected to terminal C; Diode D
10negative electrode and diode D
8anode, electric capacity C
r1the other end be connected; Diode D
11negative electrode and diode D
9anode, electric capacity C
r2the other end be connected; Diode D
8cathode connecting terminal A; Diode D
9cathode connecting terminal B.
2. the soft switch topology structure of single-phase semi-conductor electricity force transducer according to claim 1, is characterized in that: described device for power switching is insulated gate bipolar transistor IGBT, mos field effect transistor MOSFET, thyristor SCR or turn-off thyristor GTO.
3. the soft switch topology structure of single-phase semi-conductor electricity force transducer according to claim 1, is characterized in that: described diode D
5~ D
7for diode in the body of external diode or device for power switching.
4. the soft switch topology structure of single-phase semi-conductor electricity force transducer according to claim 1, is characterized in that: described input side direct voltage source E
dfor the direct voltage source generated through the direct voltage source of rectification, storage battery, fuel cell, photovoltaic cell or wind-powered electricity generation.
5. the soft switch topology structure of single-phase semi-conductor electricity force transducer according to claim 1, is characterized in that: described load is resistive load, inductive load, capacitive load, direct voltage source E or alternating-current voltage source e.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310345893.9A CN103401415B (en) | 2013-08-09 | 2013-08-09 | The soft switch topology structure of single-phase semi-conductor electricity force transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310345893.9A CN103401415B (en) | 2013-08-09 | 2013-08-09 | The soft switch topology structure of single-phase semi-conductor electricity force transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103401415A CN103401415A (en) | 2013-11-20 |
| CN103401415B true CN103401415B (en) | 2015-10-28 |
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|---|---|---|---|
| CN201310345893.9A Expired - Fee Related CN103401415B (en) | 2013-08-09 | 2013-08-09 | The soft switch topology structure of single-phase semi-conductor electricity force transducer |
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Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100199506B1 (en) * | 1996-10-29 | 1999-06-15 | 윤문수 | A zero voltage/current switching circuit for reduced ripple current of the full-bridge dc/dc converter |
| CN2768301Y (en) * | 2004-11-01 | 2006-03-29 | 福州大学 | Pole resonant soft switch inverter |
| US7173467B2 (en) * | 2005-03-31 | 2007-02-06 | Chang Gung University | Modified high-efficiency phase shift modulation method |
| CN100416994C (en) * | 2006-08-17 | 2008-09-03 | 上海交通大学 | Separation boost push-pull soft switch DC/AC converter |
| JP4790826B2 (en) * | 2009-03-10 | 2011-10-12 | 株式会社日立製作所 | Power supply device and hard disk device |
| CN201774474U (en) * | 2010-08-26 | 2011-03-23 | 哈尔滨九洲电气股份有限公司 | Single-stage series resonance Buck-Boost inverter |
| CN103001523B (en) * | 2012-10-31 | 2015-07-08 | 上海交通大学 | Zero-voltage switching energy storage bridge-type inverter without additional voltage and modulation method for inverter |
-
2013
- 2013-08-09 CN CN201310345893.9A patent/CN103401415B/en not_active Expired - Fee Related
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Owner name: CHANGZHOU JUTE INDUSTRIAL TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: JIANGSU STAR INDUSTRY TECHNOLOGY CO., LTD. Effective date: 20150714 |
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Inventor after: Xu Yaming Inventor after: Chen Guocheng Inventor after: Gu Hongbing Inventor after: Zhou Qinli Inventor before: Xu Yaming Inventor before: Wei Shigui Inventor before: Chen Shuang Inventor before: Chen Guocheng Inventor before: Gu Hongbing Inventor before: Zhou Qinli |
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Free format text: CORRECT: INVENTOR; FROM: XU YAMING WEI SHIGUI CHEN SHUANG CHEN GUOCHENG GU HONGBING ZHOU QINLI TO: XU YAMING CHEN GUOCHENG GU HONGBING ZHOU QINLI |
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