CN103401415A - Soft switch topological structure of single-phase semi-conductor power converter - Google Patents
Soft switch topological structure of single-phase semi-conductor power converter Download PDFInfo
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- CN103401415A CN103401415A CN2013103458939A CN201310345893A CN103401415A CN 103401415 A CN103401415 A CN 103401415A CN 2013103458939 A CN2013103458939 A CN 2013103458939A CN 201310345893 A CN201310345893 A CN 201310345893A CN 103401415 A CN103401415 A CN 103401415A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 239000003990 capacitor Substances 0.000 claims description 23
- 230000005611 electricity Effects 0.000 claims description 20
- 239000000446 fuel Substances 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 12
- 210000004027 cell Anatomy 0.000 description 6
- 238000010248 power generation Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012913 prioritisation Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a soft switch topological structure of a single-phase semi-conductor power converter, which is technically characterized in that an auxiliary resonance unit is additionally arranged on a conventional single-phase hard switch power converter and is connected into a single-phase H-bridge of a hard switch, so as to form a soft switch semi-conductor power converter. The improved power converter is used for conducting DC-DC or DC-AC conversion on an input signal of an input side DC voltage source; then, the input signal is output to a load after being filtered. The auxiliary resonance unit can improve the power converter by additionally arranging or integrating a switch power device and an internal diode. According to the technical scheme, compared with the conventional single-phase hard switch power converter, the single-phase semi-conductor power converter adopting the soft switch topological structure and the auxiliary resonance unit has the advantages that the power conversion efficiency is greatly improved; electromagnetic interference can be suppressed effectively.
Description
Technical field
The present invention relates to a kind of soft switch topology structure of Monophase electric power converter, relate in particular to a kind of high efficiency, the DC-DC converter of low electromagnetic interference or the soft switch topology structure of DC-AC converter, be applied to photovoltaic generation, wind power generation, fuel cell power generation, communication power supply, wherein the generating comprise be incorporated into the power networks, from net or hybrid.
Background technology
In recent years, along with the fast development of semiconductor power device and singlechip technology, the application of the semi-conductor electricity force transducers such as DC-DC, DC-AC is more and more extensive, particularly photovoltaic generation, wind power generation, fuel cell power generation, communication power supply etc.Because above-mentioned power converter adopts regenerative resource (as photovoltaic cell component) more, cost is all higher, and belongs to the product for civilian use, thus its power converter efficiency is had relatively high expectations, also tighter to its electromagnetic interference restriction.As shown in Figure 1, in figure, terminal C's traditional single-phase hard switching power converter should connect together with terminal N, and is convenient for the back narration herein, specially separately expression.Illustrate as seen, in the single-phase H bridge of the hard switching of this single-phase hard switching power converter, its switch power device T
1Collector electrode, diode D
1Negative electrode, diode D
2Negative electrode and device for power switching T
2Collector electrode and input side direct voltage source E
dPositive pole be connected in terminals P.And definition terminal A is device for power switching T
1Emitter and device for power switching T
3Contact between collector electrode; Terminal B is device for power switching T
2Emitter and device for power switching T
4Contact between collector electrode.Signal by terminal A, the conversion of B output power, to filter, exports load to after filtering high-frequency harmonic component wherein then again.
But this traditional single phase hard switching power converter in actual applications, and conversion efficiency is relatively poor, and electromagnetic interference intensity is also larger, is difficult to the relevant authentication requirement of the competent world, the home products market access.
Summary of the invention
, in view of above-mentioned traditional existing defect of hard switching power converter, the objective of the invention is to propose a kind of soft switch topology structure of single-phase semi-conductor electricity force transducer, to improving conversion efficiency and suppressing electromagnetic interference.
The present invention realizes that the technical solution of above-mentioned purpose is: the soft switch topology structure of single-phase semi-conductor electricity force transducer relates to input side direct voltage source E
d, the single-phase H bridge of hard switching, filter and load, described input side direct voltage source E
dInput signal transport to filter via soft switching semiconductor power converter DC-DC or DC-AC conversion, and via filter filtering high-frequency harmonic component, transport to load, it is characterized in that: described soft switch topology structure is set auxiliary resonance unit between terminal A, B at the single-phase H bridge of hard switching, C, N, and wherein terminal A is device for power switching T
1Emitter and device for power switching T
3Contact between collector electrode, terminal B are device for power switching T
2Emitter and device for power switching T
4Contact between collector electrode, terminal C are device for power switching T
3Emitter and device for power switching T
4Contact between emitter, terminal N for disconnect from terminal C and with input side direct voltage source E
dThe contact that negative pole is connected.
Further, described auxiliary resonance unit is by device for power switching T
5～T
7, diode D
5～D
7, diode D
8～D
11, inductance L
r1～L
r2, capacitor C
r1～C
r3Form, wherein device for power switching T
5Emitter and diode D
5Anode, device for power switching T
7Emitter, the anode D of diode
7, capacitor C
r3An end, device for power switching T
6Emitter and diode D
6Anode be connected to terminal N; Device for power switching T
5Collector electrode and diode D
5Negative electrode, diode D
10Anode, inductance L
r1An end be connected; Device for power switching T
6Collector electrode and diode D
6Negative electrode, diode D
11Anode, inductance L
r2An end be connected; Device for power switching T
7Collector electrode and diode D
7Negative electrode, capacitor C
r3The other end, inductance L
r1The other end, inductance L
r2The other end, capacitor C
r1An end, capacitor C
r2An end be connected to terminal C; Diode D
10Negative electrode and diode D
8Anode, capacitor C
r1The other end be connected; Diode D
11Negative electrode and diode D
9Anode, capacitor C
r2The other end be connected; Diode D
8The sub-A of cathode connection terminal; Diode D
9The sub-B of cathode connection terminal.
Further, described device for power switching is insulated gate bipolar transistor IGBT, mos field effect transistor MOSFET, thyristor SCR or turn-off thyristor GTO.
Further, described diode is the interior diode of body of external diode or device for power switching.
The soft switch topology structure of single-phase semi-conductor electricity force transducer according to claim 1 is characterized in that: described input side direct voltage source E
dDirect voltage source for the direct voltage source through rectification, storage battery, fuel cell, photovoltaic cell or wind-powered electricity generation generation.
Further, described load is resistive load, inductive load, capacitive load, direct voltage source E or alternating-current voltage source e.
The application implementation of technical solution of the present invention, compare to and use traditional single phase hard switching power converter,, by introducing the auxiliary resonance unit, effectively improved the efficiency of power converter, and can significantly suppress electromagnetic interference.
Description of drawings
Fig. 1 is the hard switching main circuit topological structure schematic diagram of traditional single phase semi-conductor electricity force transducer.
Fig. 2 is the soft switch main circuit topological structure schematic diagram of the single-phase semi-conductor electricity force transducer of the present invention.
Fig. 3 is the structural representation of auxiliary resonance unit one preferred embodiment in Fig. 2.
Fig. 4 is the soft switch topology principle schematic of Fig. 2 after in conjunction with Fig. 3.
Fig. 5 is the control sequential chart of soft switch topology shown in Figure 4.
Fig. 6 is T in soft switch topology shown in Figure 4
1, T
4, T
5, T
7Control sequential chart during work.
Fig. 7 is the enlarged diagram of A part in Fig. 6.
Fig. 8 is T in soft switch topology shown in Figure 4
1, T
4, T
5, T
7Simulation waveform during work.
Fig. 9 is mode 0(t
0Current loop schematic diagram before).
Figure 10 is mode 1(t
0～t
1) the current loop schematic diagram.
Figure 11 is mode 2(t
1～t
2) the current loop schematic diagram.
Figure 12 is mode 3(t
2～t
3) the current loop schematic diagram.
Figure 13 is mode 4(t
3～t
4) in the current loop schematic diagram in when charging.
Figure 14 is mode 4(t
3～t
4) the middle current loop schematic diagram that charges after expiring.
Figure 15 is mode 5(t
4～t
5) the current loop schematic diagram.
Figure 16 is mode 6(t
5～t
0) the current loop schematic diagram.
Embodiment
, below in conjunction with the embodiment accompanying drawing, the specific embodiment of the present invention is further elaborated, so that technical scheme of the present invention is easier to understand, grasp.
The present invention is intended to propose a kind of soft switch topology structure of single-phase semi-conductor electricity force transducer, to improving conversion efficiency and suppressing electromagnetic interference.As shown in Figures 2 to 4, be that the soft switch topology structural representation of the single-phase semi-conductor electricity force transducer of the present invention and the details of auxiliary resonance unit thereof are showed.From illustrating as seen: this single-phase semi-conductor electricity force transducer relates to input side direct voltage source E
d, the single-phase H bridge of hard switching, filter and load, this input side direct voltage source E
dInput signal transport to filter after via soft switching semiconductor power converter DC-DC or DC-AC conversion, and via transporting to load after filter filtering high-frequency harmonic component.As the breakthrough feature that is different from conventional transducers shown in Figure 1, this power converter has been introduced the soft switch topology structure, and this soft switch topology structure is auxiliary resonance unit set between terminal A, the B of the single-phase H bridge of hard switching, C, N, and wherein terminal A is device for power switching T
1Emitter and device for power switching T
3Contact between collector electrode, terminal B are device for power switching T
2Emitter and device for power switching T
4Contact between collector electrode, terminal C are device for power switching T
3Emitter and device for power switching T
4Contact between emitter, terminal N for disconnect from terminal C and with input side direct voltage source E
dThe contact that negative pole is connected.
Moreover this auxiliary resonance unit is by device for power switching T
5～T
7, diode D
5～D
7, diode D
8～D
11, inductance L
r1～L
r2, capacitor C
r1～C
r3(capacitor C wherein
r3Can be external capacitor, can be also device for power switching T
7With diode D
7Knot between electric capacity) form device for power switching T wherein
5Emitter and diode D
5Anode, device for power switching T
7Emitter, the anode D of diode
7, capacitor C
r3An end, device for power switching T
6Emitter and diode D
6Anode be connected to terminal N; Device for power switching T
5Collector electrode and diode D
5Negative electrode, diode D
10Anode, inductance L
r1An end be connected; Device for power switching T
6Collector electrode and diode D
6Negative electrode, diode D
11Anode, inductance L
r2An end be connected; Device for power switching T
7Collector electrode and diode D
7Negative electrode, capacitor C
r3The other end, inductance L
r1The other end, inductance L
r2The other end, capacitor C
r1An end, capacitor C
r2An end be connected to terminal C; Diode D
10Negative electrode and diode D
8Anode, capacitor C
r1The other end be connected; Diode D
11Negative electrode and diode D
9Anode, capacitor C
r2The other end be connected; Diode D
8The sub-A of cathode connection terminal; Diode D
9The sub-B of cathode connection terminal.
As optional multiple prioritization scheme, this device for power switching T
1～T
7For insulated gate bipolar transistor IGBT, mos field effect transistor MOSFET, thyristor SCR or turn-off thyristor GTO.This diode D
1～D
7For diode in the body of external diode or device for power switching.This input side direct voltage source E
dDirect voltage source for the direct voltage source through rectification, storage battery, fuel cell, photovoltaic cell or wind-powered electricity generation generation.This load is resistive load, inductive load, capacitive load, direct voltage source E or alternating-current voltage source e.
Based on preferred embodiment shown in Figure 4 in detail, the control mode of its principle is described in detail below.To shown in Figure 8, to generate electricity by way of merging two or more grid systems as example, the load in Fig. 4 is the alternating-current voltage source e of electrical network at this moment as Fig. 5.At the positive half period of electrical network, T is only arranged in figure
1, T
4, T
5, T
7Work (this moment T
2, T
3, T
6All turn-off, separately do not carry later).Fig. 5 is the control sequential chart of soft switch topology shown in Figure 4.Shown in Figure 6 is T
1, T
5, T
7, T
4Control mode during work.Fig. 7 is that (comparison diagram 8) amplified in the part of A part control signal in Fig. 6.Fig. 8 is T
1, T
4, T
5, T
7Simulation waveform during work (is got E
d=400V), and wherein, V
G-T1, V
G-T5, V
G-T7Be respectively T
1, T
5, T
7The driving signal; V
-T1, V
-T5, V
-T7Be respectively T
1, T
5, T
7C, E between voltage; i
-T1, i
-T5, i
-T7Be respectively T
1, T
5, T
7Electric current; V
-Cr1For the voltage on electric capacity.
Below with a switch periods (t
0～t
5), for the operating principle of example analysis main circuit, have 7 mode: mode 0～mode 6; For summary just, below only with the device number of device for power switching or diode, refer to related device.
Mode 0(t
0Before): T
1, T
5, T
7All turn-off, only have T
4Keep open-minded, inductance L
r1And L
r2Along T
4, D
3Afterflow, be discharged into electrical network with the energy of its storage, this current i
FlApproach as shown in Figure 9.Ignore T
4And D
3Conduction voltage drop, A, 2 of B belong to idiostatic, and are E
d/ 2=200V, so V
-T1, V
-T7Be all 200V.
Mode 1(t
0～t
1): t
0Constantly, T
1, T
5Open-minded simultaneously, obvious i
Lr1Start from scratch and progressively increase, so T
1, T
5For zero current turning-on, as shown in figure 10.Ignore T
1, T
4, D
3Conduction voltage drop, P, A, C, 4 of B are idiostatic, are all E
d=400V, so T
7Pressure drop V
-T7=400V.
Mode 2(t
1～t
2): arrived t
1Constantly, i
Lr1=i
Fl, D3 turn-offs naturally, C
r3, L
r1Between resonance occurs, as shown in figure 11.C
r3On electric charge progressively transfer to L
r1In, i
Lr1Continue to increase C
r3Terminal voltage (that is T
7Terminal voltage V
-T7) progressively drop to zero, this moment i
Lr1=i
Lf+ i
Cr3Work as C
r3When both end voltage is zero, diode D
7Forward conduction, i
Lr1=i
Lf+ i
D7
Mode 3(t
2～t
3): t
2Constantly, trigger T
7, obvious T
7For no-voltage open-minded, with mode 2, D
7Continue conducting, as shown in figure 12.
Mode 4(t
3～t
4): t
3Constantly, turn-off T
5, i
Lr1Through D
10To C
r1Charging (C before this
r1Terminal voltage be zero), due to T
7Open-minded, therefore C, N are idiostatic, T
5Shutoff be that no-voltage is turn-offed, as shown in figure 13.T
5Shutoff force i
LfAll be transferred to T under zero-voltage state
7In, therefore at T
5The shutoff initial stage, T
7In individual peak current is arranged, i.e. i
LfAlong with i
Lr1To C
r1Charging, progressively rise, and works as V
Cr1Rise to E
dIn the time of (400V), D8 forward conduction, i
Lr1In remaining energy discharge rapidly to electrical network along D8, due to i
LfSubstantially constant, i
Lr1Discharge make, reduce rapidly, and even to zero, as shown in figure 14.
Mode 5(t
3～t
4): along with i
Lr1Reducing of discharge, i
T1, i
T7Progressively increase again, to t
4Constantly, i
T1=i
T7=i
Lf, and along with trigger impulse V
G-T1The difference of width increases to corresponding amplitude, as shown in figure 15.
Mode 6(t
4～t
5): t
5Constantly, turn-off simultaneously T
1, T
7, i
LfAlong C
r1, D
8Afterflow, as shown in figure 16.Due to C
r1Terminal voltage E
dFor (400V), so T
1And T
2All with no-voltage, turn-off.Work as C
r1Terminal voltage drop to zero after, D
3Conducting, i
LfAlong the D3 afterflow, state has been got back to again mode 0, as shown in Figure 9.The current potential of A, C, B is all E at this moment
d/ 2=200V, so T
1, T
7C, E between voltage be all 200V.
At the negative half-cycle of line voltage, corresponding to T in Fig. 4
2, T
3, T
6, T
7Work, the positive half period of its principle and line voltage is just the same, and those skilled in the art work as to understand its control mode and operation process, therefore repeat no more.
, for the positive half period of the next switch periods of line voltage, still, by above-mentioned 7 mode running, with this, circulate.Compare to and use traditional single phase hard switching power converter, by introducing the auxiliary resonance unit, and improvement to power converter can be realized by additional or integrated switch power device and internal body diodes in this auxiliary resonance unit, effectively improve the efficiency of power converter, and can significantly suppress electromagnetic interference.
Claims (6)
1. the soft switch topology structure of single-phase semi-conductor electricity force transducer, relate to input side direct voltage source E
d, the single-phase H bridge of hard switching, filter and load, described input side direct voltage source E
dInput signal transport to filter via soft switching semiconductor power converter DC-DC or DC-AC conversion, and via filter filtering high-frequency harmonic component, transport to load, it is characterized in that: described soft switch topology structure is set auxiliary resonance unit between terminal A, B at the single-phase H bridge of hard switching, C, N, and wherein terminal A is device for power switching T
1Emitter and device for power switching T
3Contact between collector electrode, terminal B are device for power switching T
2Emitter and device for power switching T
4Contact between collector electrode, terminal C are device for power switching T
3Emitter and device for power switching T
4Contact between emitter, terminal N for disconnect from terminal C and with input side direct voltage source E
dThe contact that negative pole is connected.
2. the soft switch topology structure of single-phase semi-conductor electricity force transducer according to claim 1 is characterized in that: described auxiliary resonance unit is for by device for power switching T
5～T
7, diode D
5～D
7, diode D
8～D
11, inductance L
r1～L
r2, capacitor C
r1～C
r3Form, wherein device for power switching T
5Emitter and diode D
5Anode, device for power switching T
7Emitter, the anode D of diode
7, capacitor C
r3An end, device for power switching T
6Emitter and diode D
6Anode be connected to terminal N; Device for power switching T
5Collector electrode and diode D
5Negative electrode, diode D
10Anode, inductance L
r1An end be connected; Device for power switching T
6Collector electrode and diode D
6Negative electrode, diode D
11Anode, inductance L
r2An end be connected; Device for power switching T
7Collector electrode and diode D
7Negative electrode, capacitor C
r3The other end, inductance L
r1The other end, inductance L
r2The other end, capacitor C
r1An end, capacitor C
r2An end be connected to terminal C; Diode D
10Negative electrode and diode D
8Anode, capacitor C
r1The other end be connected; Diode D
11Negative electrode and diode D
9Anode, capacitor C
r2The other end be connected; Diode D
8The sub-A of cathode connection terminal; Diode D
9The sub-B of cathode connection terminal.
3. the soft switch topology structure of single-phase semi-conductor electricity force transducer according to claim 2, it is characterized in that: described device for power switching is insulated gate bipolar transistor IGBT, mos field effect transistor MOSFET, thyristor SCR or turn-off thyristor GTO.
4. the soft switch topology structure of single-phase semi-conductor electricity force transducer according to claim 2 is characterized in that: described diode is diode in the body of external diode or device for power switching.
5. the soft switch topology structure of single-phase semi-conductor electricity force transducer according to claim 1, is characterized in that: described input side direct voltage source E
dDirect voltage source for the direct voltage source through rectification, storage battery, fuel cell, photovoltaic cell or wind-powered electricity generation generation.
6. the soft switch topology structure of single-phase semi-conductor electricity force transducer according to claim 1, it is characterized in that: described load is resistive load, inductive load, capacitive load, direct voltage source E or alternating-current voltage source e.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310345893.9A CN103401415B (en) | 2013-08-09 | 2013-08-09 | The soft switch topology structure of single-phase semi-conductor electricity force transducer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310345893.9A CN103401415B (en) | 2013-08-09 | 2013-08-09 | The soft switch topology structure of single-phase semi-conductor electricity force transducer |
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| Publication Number | Publication Date |
|---|---|
| CN103401415A true CN103401415A (en) | 2013-11-20 |
| CN103401415B CN103401415B (en) | 2015-10-28 |
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|---|---|---|---|
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5886884A (en) * | 1996-10-29 | 1999-03-23 | Korea Electrotechnology Research Institute | Passive ripple filter for zero voltage-zero current switched full-bridge DC/DC converters |
| CN2768301Y (en) * | 2004-11-01 | 2006-03-29 | 福州大学 | Pole resonant soft switch inverter |
| US7173467B2 (en) * | 2005-03-31 | 2007-02-06 | Chang Gung University | Modified high-efficiency phase shift modulation method |
| CN1913309A (en) * | 2006-08-17 | 2007-02-14 | 上海交通大学 | Separation boost push-pull soft switch DC/AC converter |
| US20100232180A1 (en) * | 2009-03-10 | 2010-09-16 | Hitachi, Ltd. | Power supply unit, hard disk drive and method of switching the power supply unit |
| CN201774474U (en) * | 2010-08-26 | 2011-03-23 | 哈尔滨九洲电气股份有限公司 | Single-stage series resonance Buck-Boost inverter |
| CN103001523A (en) * | 2012-10-31 | 2013-03-27 | 上海交通大学 | Zero-voltage switching energy storage bridge-type inverter without additional voltage and modulation method for inverter |
-
2013
- 2013-08-09 CN CN201310345893.9A patent/CN103401415B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5886884A (en) * | 1996-10-29 | 1999-03-23 | Korea Electrotechnology Research Institute | Passive ripple filter for zero voltage-zero current switched full-bridge DC/DC converters |
| CN2768301Y (en) * | 2004-11-01 | 2006-03-29 | 福州大学 | Pole resonant soft switch inverter |
| US7173467B2 (en) * | 2005-03-31 | 2007-02-06 | Chang Gung University | Modified high-efficiency phase shift modulation method |
| CN1913309A (en) * | 2006-08-17 | 2007-02-14 | 上海交通大学 | Separation boost push-pull soft switch DC/AC converter |
| US20100232180A1 (en) * | 2009-03-10 | 2010-09-16 | Hitachi, Ltd. | Power supply unit, hard disk drive and method of switching the power supply unit |
| CN201774474U (en) * | 2010-08-26 | 2011-03-23 | 哈尔滨九洲电气股份有限公司 | Single-stage series resonance Buck-Boost inverter |
| CN103001523A (en) * | 2012-10-31 | 2013-03-27 | 上海交通大学 | Zero-voltage switching energy storage bridge-type inverter without additional voltage and modulation method for inverter |
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|---|---|
| CN103401415B (en) | 2015-10-28 |
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