CN103400921A - Flip-chip type LED (light emitting diode) and backlight module thereof - Google Patents
Flip-chip type LED (light emitting diode) and backlight module thereof Download PDFInfo
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- CN103400921A CN103400921A CN2013103593678A CN201310359367A CN103400921A CN 103400921 A CN103400921 A CN 103400921A CN 2013103593678 A CN2013103593678 A CN 2013103593678A CN 201310359367 A CN201310359367 A CN 201310359367A CN 103400921 A CN103400921 A CN 103400921A
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Abstract
The invention provides a flip-chip type LED (light emitting diode) and a backlight module thereof. The flip-chip type LED comprises a carrying substrate, and a flip-chip semiconductor chip positioned on the carrying substrate and electrically connected with the carrying substrate, wherein the flip-chip semiconductor chip comprises a top surface opposite to the carrying substrate, multiple light emitting surfaces surrounding and connected with the top surface, and a first light reflecting layer positioned on the surface of the top surface and used for changing directions of multiple light rays so as to enable the light rays to be output from the light emitting surfaces. A light reflecting part is used for reflecting the light rays back into a light transmitting board, so that the phenomenon that dark bands are formed in peripheral regions of a conical recess part of a light outgoing surface can be avoided.
Description
Technical field
The present invention is relevant for a kind of light-emitting diode, particularly relevant for a kind of crystal-coated light-emitting diodes and backlight module thereof.
Background technology
Flip Chip (Flip-Chip), also claim " crystalline substance that falls encapsulates ", is a kind of of chip encapsulation technology.This encapsulation technology is mainly the mode of the chip package of being different from over, is chip is placed on substrate (chip pad) in the past, then uses routing technology (wire bonding) that chip is connected with the point of contact on substrate.The chip package technology is at the long projection of chip tie point (bump), then chip is turned projection and substrate (substrate) are directly linked and its name.
General light-emitting diode is all upwards to project light from the end face of the semiconductor structure of two layer stacks, and flip-chip light-emitting diode is no exception.Take the sapphire substrate flip-chip light-emitting diode as example, he forms P type semiconductor and N type semiconductor on sapphire substrate, and then turns, and utilizes tin ball, ping-pong ball or gold goal, is electrically connected on bearing substrate; What pay special attention to is, the P type semiconductor of selecting and N type semiconductor can send blue light after energising, blue light can be directly by the sapphire substrate of printing opacity, so from the end face of semiconductor structure, upwards project light.
Summary of the invention
The technical problem to be solved in the present invention is in order to overcome in prior art not from the defect of the crystal-coated light-emitting diodes of lateral direction light emission, a kind of crystal-coated light-emitting diodes and backlight module thereof are provided, this crystal-coated light-emitting diodes can be as the point-source of light from lateral direction light emission, and then, in conjunction with the slim advantage of edge-type light guide plate and the low price advantage of direct type light guide plate, be widely used on backlight module.
The present invention solves above-mentioned technical problem by following technical proposals:
A kind of crystal-coated light-emitting diodes, its characteristics be, this crystal-coated light-emitting diodes comprises:
One bearing substrate; And
One covers brilliant semiconductor chip, is positioned on this bearing substrate, and is electrically connected this bearing substrate, and this covers brilliant semiconductor chip and comprises:
One end face, this bearing substrate relatively;
A plurality of light-emitting areas, around and connect this end face; And
One first reflector layer, be positioned at this end face surface, and in order to change the direction of a plurality of light, so that light is respectively from those light-emitting area output.
Preferably, this crystal-coated light-emitting diodes also comprises: one second reflector layer, be positioned at the surface of one of this end face setting bottom surface relatively, and be used for changing the direction of those light, so that light is respectively from those light-emitting areas output.After light is rebounded by the first reflector layer, reflector layer on meeting carried substrate rebounds back again, finally by the light-emitting area of side, exported, but, the bounce-back of light all can cause the loss of amount of light with light path, be lifted out light quantity in order further to shorten light path, with manufacture of semiconductor, the second reflector layer design covered in brilliant semiconductor chip.
Preferably, the material of this second reflector layer comprises at least a material in silver, aluminium, gold, chromium, copper, palladium and titanium.
Preferably, the material of this first reflector layer comprises at least a material in silver, aluminium, gold, chromium, copper, palladium and titanium.The first reflector layer and the second reflector layer, be to use manufacture of semiconductor, and for example sputter or chemical vapour deposition (CVD), be created on and cover in brilliant semiconductor chip.
Preferably, this covers brilliant semiconductor chip is that a sapphire substrate covers brilliant semiconductor chip, and this first reflector layer is laid on this sapphire substrate and covers the surface of the end face of brilliant semiconductor chip.While selecting sapphire substrate to cover brilliant semiconductor chip,, because send blue light after the two-layer semiconductor stack material that generates on sapphire substrate can be switched on, so can design the yellow fluorescence bisque, blue light is converted to white light.
Preferably, this crystal-coated light-emitting diodes also comprises: a packaging body, and be arranged on this bearing substrate and coat this crystal covered chip, and having a phosphor powder layer in this packaging body, this phosphor powder layer has a plurality of wavelength conversion particles, in order to change the wavelength of those light.The yellow fluorescence bisque also can be arranged in a packaging body, this packaging body is configured on bearing substrate and coats crystal covered chip, in this way, and a plurality of wavelength conversion particles that phosphor powder layer itself has, just can be used for changing the wavelength of light, and then convert blue light to white light.
Preferably, this crystal-coated light-emitting diodes also comprises: a phosphor powder layer, have a plurality of wavelength conversion particles, and coat respectively on those light-emitting areas, be used for changing the wavelength of those light.The yellow fluorescence bisque can directly be coated on described light-emitting area, and in this way, a plurality of wavelength conversion particles that phosphor powder layer itself has, just can be used for changing the wavelength of light, and then convert blue light to white light.
Preferably, this covers brilliant semiconductor chip is that a silicon carbide substrate covers brilliant semiconductor chip, and this first reflector layer is to be laid on this silicon carbide substrate to cover the surface of the end face of brilliant semiconductor chip.
A kind of backlight module, its characteristics be, this backlight module comprises:
One light guide plate, comprise a plurality of grooves and a light inlet bottom surface, and those groove compartment of terrains are positioned on this light inlet bottom surface; And
A plurality of crystal-coated light-emitting diodes, stretch into respectively in those grooves, and each those crystal-coated light-emitting diodes comprises:
One bearing substrate; And
One covers brilliant semiconductor chip, is positioned on this bearing substrate, and is electrically connected this bearing substrate, and this covers brilliant semiconductor chip and comprises:
One end face, this bearing substrate relatively;
A plurality of light-emitting areas, around and connect this end face; And
One first reflector layer, be positioned at the surface of this end face, is used for changing the direction of a plurality of light, so that light is respectively from those light-emitting areas output.
Preferably, this backlight module also comprises: one second reflector layer, be arranged in this crystal-coated light-emitting diodes surface of one of this end face setting bottom surface relatively, and be used for changing the direction of those light, so that light is respectively from those light-emitting areas output.In addition, also can directly be fitted in the light inlet bottom surface of light guide plate, and then in conjunction with the slim advantage of edge-type light guide plate and the low price advantage of direct type light guide plate.
Positive progressive effect of the present invention is: even do not reserve enough exhibition electrical distances between the present invention's crystal-coated light-emitting assembly and light guide plate, the reflector layer of crystal-coated light-emitting assembly still can allow these light laterally spread to provide uniform exiting surface on light guide plate in light guide plate, and then realizes the purpose of external form slimming.So, backlight module of the present invention just can be in conjunction with the slim advantage of edge-type light guide plate and the low price advantage of direct type light guide plate.
Description of drawings
Figure 1A is the end view of the backlight module of the embodiment of the present invention 1.
Figure 1B is the enlarged drawing of A section in Figure 1A.
Fig. 2 is the end view of the crystal-coated light-emitting assembly of the embodiment of the present invention 2.
Fig. 3 is the end view of the crystal-coated light-emitting assembly of the embodiment of the present invention 3.
Fig. 4 is the end view of the crystal-coated light-emitting assembly of the embodiment of the present invention 4.
Fig. 5 is the end view of the crystal-coated light-emitting assembly of the embodiment of the present invention 5.
Fig. 6 A is the end view of the backlight module of the embodiment of the present invention 6.
Fig. 6 B is the end view of the crystal-coated light-emitting assembly in Fig. 6 A.
Description of reference numerals:
Backlight module: 100 light guide plate: 200
Light inlet bottom surface: 210 bright dipping end faces: 220
Groove: 240 secondary Lamp cups: 241
Crystal-coated light-emitting diodes: 300 first reflector layers: 330
Light: R crystal covered chip: 320
End face: 320T luminescent layer: 323
Bearing substrate: 310 sides: 320L
Bottom surface: 320B chip substrate: 321
The first semiconductor layer: 322 luminescent layers: 323
The second semiconductor layer: 324 first electrodes: 325
The second electrode: 326 conducting objects: G1, G2
Second circuit pattern: 312 first surfaces: 322A
The 3rd surface: the poor face of 324A section: 323A
Second surface: 322B the first circuit pattern: 311
Insulating barrier: 350 bearing substrates: 310
Crystal-coated light-emitting assembly: 303 wavelength conversion particles: 361
Packaging body: 360 first reflector layers: 330
Phosphor powder layer: 362 wavelength conversion particles: 363
Face: 313F crystal-coated light-emitting assembly: 305
Plate body: 313 protrusions: 314
Placed side: 314T the second contact: 312A
The 4th contact: 312B crystal-coated light-emitting assembly: 301
Crystal-coated light-emitting assembly: 302 crystal-coated light-emitting assemblies: 304
Optical microstructures: 220M the second reflector layer: 340R, 340L, 340M
Embodiment
In general, because the liquid crystal panel of liquid crystal display itself is not luminous, therefore need configuration one backlight module in the back side of liquid crystal panel, so that the display light source of liquid crystal panel to be provided.Backlight module can be categorized as a side entering type (Edge Lighting) backlight module and a straight-down negative (Direct Lighting) backlight module according to luminous architecture.
Direct type backlight module is that a plurality of luminescence components (for example light-emitting diode) are designed in the light inlet bottom surface of a light guide plate, uses as the Zhan Guang space every suitable distance between the two, and luminescence component is towards the light inlet bottom surface of light guide plate throw light.Make divergence of beam and after dizzy opening, just can provide at the bright dipping end face of light guide plate a uniform area source through the Zhan Guang space.So the liquid crystal display of direct type backlight module is thicker on external form, but the luminescence component that needs is fewer.
Side-entering type backlight module is luminescence component (for example light-emitting diode) to be leaned against the lateral face of light guide plate.Light after on light guide plate, optical microstructures is got light, causes light path conversion and at the bright dipping end face of light guide plate, provides uniform area source.Yet side-entering type backlight module need to carry out shading and carry luminescence component by frame.And in order to reach narrow frame and the visible range larger with respect to frame, the light-emitting diode number that side-entering type backlight module needs, be the twice of the needed light-emitting diode of an ad eundem direct type backlight module number at least.Take 32 inches planes as example, the light-emitting diode of a side-entering type backlight module number is 2.4 times of direct type backlight module.In other words, in order to allow the screen integral thinned, the cost of paying is exactly that cost is high.
In view of this, the present inventor is based on aforementioned two kinds of area source backlight modules have been carried out corresponding research, and provided crystal-coated light-emitting diodes and the backlight module thereof that proposes in following execution mode.
Embodiment 1
As shown in Figure 1A and Figure 1B, the backlight module 100 of the present embodiment comprises a light guide plate 200 and a plurality of crystal-coated light-emitting diodes 300.One light inlet bottom surface of light guide plate 200 has a plurality of grooves 240.These crystal-coated light-emitting diodes 300 lay respectively in these grooves 240, and enter in light guide plate 200 from the interior throw light R of these grooves 240 respectively.As shown in Figure 1B, each crystal-coated light-emitting diodes 300 comprises a bearing substrate 310 and a crystal covered chip 320.Crystal covered chip 320 is positioned on bearing substrate 310, and is electrically connected bearing substrate 310.Crystal covered chip 320 comprises an end face 320T, at least one bottom surface 320B, a plurality of side 320L and one first reflector layer 330.The first reflector layer 330 is arranged on end face 320T.When crystal covered chip 320 sent a plurality of light R, the first reflector layer 330 was able to reflection ray R, to change the original direct of travel of these light R.The light R that these are altered course can laterally export from each side 320L of crystal covered chip 320, and therefore, these sides 320L is called as exiting surface.
Therefore, these light R from groove 240 enter in light guide plate 200 and laterally diffusion after, provide uniform area source at the bright dipping end face of light guide plate 200.In other words, groove 240 has replaced the light inlet side of traditional side-entering type backlight module., because each crystal-coated light-emitting assembly stretches in light guide plate, can effectively shorten the distance between crystal-coated light-emitting assembly and light guide plate, and then realize the purpose of external form slimming.And, backlight module of the present invention is on the configuration frame of light source position, adopt the scheme of similar traditional direct type backlight module, therefore can save light-emitting diode over half, and then overcome simultaneously the shortcoming that above-mentioned direct type backlight module is too thick and side light type back light module is too expensive.
In addition, each groove 240 can be filled in secondary Lamp cup 241, strengthens entering the light of light guide plate by the surrounding side direction.Specifically, light guide plate sheet material can reach the thickness of 3mm, and this is not minimum limit value, but is fit to a kind of selection of large scale liquid crystal TV.Depth of groove can reach the 2mm left and right, then by relevant design, thickness can reach the light-emitting diode of 0.15mm, can be placed in the position of approximately working as the sheet material 1.5mm of central authorities thickness.Certainly, light guide plate upper surface or lower surface, still need to have the optical pattern microstructure design that matches, and makes the whole uniform illuminating of exiting surface.
Embodiment 2
As shown in Figure 2, in the crystal-coated light-emitting assembly 301 of the present embodiment, crystal covered chip 320 comprises a chip substrate 321, one first semiconductor layer 322, a luminescent layer 323, one second semiconductor layer 324, one first electrode 325 and one second electrode 326.Chip substrate 321 tool light transmissions, be for example a sapphire substrate or a silicon carbide substrate, and they are in brilliant processing procedure of heap of stone, as the brilliant substrate of the length of flip-chip light-emitting diode.Yet, being not limited to above-mentioned material, those skilled in the art should according to actual needs, select the concrete material of chip substrate.The first semiconductor layer 322 and the first reflector layer 330 are formed at respectively on two opposite faces of chip substrate 321.Therefore, chip substrate 321 is exactly end face 320T back to the face of the first semiconductor layer 322.The first semiconductor layer 322 is for example N-type or p type semiconductor layer, and a side of its relative the first reflector layer 330 comprises a first surface 322A and a second surface 322B.The polarity of the second semiconductor layer 324 and the first semiconductor layer 322 (P type/N-type) is opposite each other, stacks on first surface 322A.One side of relative the first semiconductor layer 322 of the second semiconductor layer 324 has one the 3rd surperficial 324A.Second surface 322B and the 3rd surperficial 324A are the parts of the bottom surface 320B of crystal covered chip 320.The first electrode 325 is located on second surface 322B, the second electrode 326 is positioned on the 3rd surperficial 324A, sees through respectively the soldered balls such as conducting objects G1, G2(such as gold goal, ping-pong ball or tin ball) be electrically connected one first circuit pattern 311 and a second circuit pattern 312 of bearing substrate 310.Between second surface 322B and the 3rd surperficial 324A, definable goes out a poor face 323A of section, and the poor face 323A of this section is the part of crystal covered chip 320 bottom surface 320B.The delivery position of the first semiconductor layer and the second semiconductor layer 324 is the PN junction interface because energising forms luminescent layer 323().
Yet, the invention is not restricted to this, can select by material in crystal covered chip 320 designs, in order to coordinate the light reflection function of the first reflector layer 330 on chip substrate 321; In other words,, if chip substrate 321 has albedo or the semi-transparent semi-reflecting ability of optics on material, also can coordinate the pattern of light guide plate, and play a role.By existing semiconductor technology processing procedure, metal can be deposited on chip substrate 321, in order to make the first reflector layer 330, in like manner, the second reflector layer that back will be mentioned also can be made according to this.
Embodiment 3
As shown in Figure 3, in the crystal-coated light-emitting assembly 302 of the present embodiment, for more strengthening the efficiency of the light R that is altered course from each side 320L output of crystal covered chip 320, crystal covered chip 320 also comprises at least one the second reflector layer 340R, 340L, 340M.The second reflector layer 340R, 340L, 340M are formed at the surface of these bottom surfaces 320B, also can reflection ray R.These second reflector layers 340R, 340L, 340M, be in manufacture of semiconductor, is created on the surface of bottom surface 320B with physical deposition or chemical deposition mode; Because the material of selecting may conduct electricity, so need corresponding matching design one insulating barrier 350.Insulating barrier 350 is also to be created between the second reflector layer 340R, 340L, 340M and the first electrode 325, the second electrode 326 by physical deposition or chemical deposition mode.
Certainly, as long as described the first reflector layer and the second reflector layer are can the part reflection ray, total reflection light or the total amount that appears of shield lights is just passable at least.Because the first reflector layer does not need too thick, so with electric current, increase sharply, luminous intensity is increased sharply, and still can appear some light, and can not be fully reflective.In practical application, complete reflective meeting forms dim spot on the light output surface of light guide plate.Therefore, the present invention does not limit form, color and the material of reflector layer.The first reflector layer and the second reflector layer, for example can be a light-reflecting sheet or a smooth reverberation coating, for example can tool white or the color of silver color, for example material can be the metal of high reflection coefficient, for example silver, aluminium, gold, chromium, copper, palladium, titanium or its combination, but be not limited only to this.
Embodiment 4
As shown in Figure 4, crystal-coated light-emitting assembly 303 also comprises a packaging body 360.Packaging body 360 is arranged on bearing substrate 310 and coats crystal covered chip 320.The material of packaging body 360 can be the transparent adhesive tape material, for example epoxy resin (Epoxy Resin), silicones (Silicone Resin) or Merlon (Poly Carbonate).Comprise the phosphor powder layer that a plurality of wavelength conversion particles 361 form in packaging body 360.Wavelength conversion particles 361 intersperses among in packaging body 360, with the wavelength of conversion light.
Embodiment 5
As shown in Figure 5, in the crystal-coated light-emitting assembly 304 of the present embodiment, crystal covered chip 320 also comprises a phosphor powder layer 362.Phosphor powder layer 362 is coated the outer surface of crystal covered chip 320, includes a plurality of wavelength conversion particles 363, is used for changing the wavelength of these light.
Embodiment 6
As shown in Figure 6A, bearing substrate 310 comprises a plate body 313 and a protrusion 314.Protrusion 314 protrudes from the one side 313F of plate body 313, make between this face 313F of a placed side 314T of protrusion 314 and plate body 313 and keep a height difference H, yet protrusion 314 is not limited to be positioned on plate body 313 one-body moldedly.One first contact 311A of the first circuit pattern 311 and one second contact 312A of second circuit pattern 312 are exposed to respectively the placed side 314T of protrusion 314, and the 4th contact 312B of the 3rd contact 311B of the first circuit pattern 311 and second circuit pattern 312 is exposed to respectively the one side of plate body 313 back to protrusion 314.Crystal covered chip 320 is arranged at the placed side 314T of protrusion 314, and sees through for example soldered ball of conducting objects G1, G2() be electrically connected the first contact 311A of the first circuit pattern 311 and the second contact 312A of second circuit pattern 312.Packaging body 360 coats protrusion 314 and crystal covered chip 320 in the lump.
As shown in Figure 6B, when each crystal-coated light-emitting assembly 305 stretches in groove 240, this face 313F that makes plate body 313 is during in abutting connection with light inlet bottom surface 210, because protrusion 314 and crystal covered chip 320 all stretch in groove 240, therefore, crystal covered chip 320 can be more near the bright dipping end face 220 of light guide plate 200, and then allow light that crystal covered chip 320 is exported be directed to more fully the bright dipping end face 220 of light guide plate 200, with the brightness of the exiting surface that improves light guide plate 200.
Please continue to be understood in conjunction with Fig. 6 A, for guaranteeing light guide plate 200, provide better light extraction efficiency, light guide plate 200 more comprises a plurality of diffusions and uses or reflect the optical microstructures 220M of use.For instance, optical microstructures 220M compartment of terrain is formed on bright dipping end face 220, so that light is more even.Lift another example, the vertical orthographic projection of each crystal-coated light-emitting diodes 300 is large than the density of the optical microstructures 220M that configures on all the other zones of bright dipping end face of light guide plate 200 to the density of the optical microstructures 220M that configures on the zone of the bright dipping end face 220 of light guide plate 200.So, can make the brightness on the bright dipping end face 220 of light guide plate 200 more even.
Although more than described the specific embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is limited by appended claims.Those skilled in the art under the prerequisite that does not deviate from principle of the present invention and essence, can make various changes or modifications to these execution modes, but these changes and modification all fall into protection scope of the present invention.
Claims (10)
1. a crystal-coated light-emitting diodes, is characterized in that, this crystal-coated light-emitting diodes comprises:
One bearing substrate; And
One covers brilliant semiconductor chip, is positioned on this bearing substrate, and is electrically connected this bearing substrate, and this covers brilliant semiconductor chip and comprises:
One end face, this bearing substrate relatively;
A plurality of light-emitting areas, around and connect this end face; And
One first reflector layer, be positioned at this end face surface, and in order to change the direction of a plurality of light, so that light is respectively from those light-emitting area output.
2. crystal-coated light-emitting diodes as claimed in claim 1, is characterized in that, this crystal-coated light-emitting diodes also comprises:
One second reflector layer, be positioned at the surface of one of this end face setting bottom surface relatively, is used for changing the direction of those light, so that light is respectively from those light-emitting areas output.
3. crystal-coated light-emitting diodes as claimed in claim 2, is characterized in that, the material of this second reflector layer comprises at least a material in silver, aluminium, gold, chromium, copper, palladium and titanium.
4. crystal-coated light-emitting diodes as claimed in claim 1, is characterized in that, the material of this first reflector layer comprises at least a material in silver, aluminium, gold, chromium, copper, palladium and titanium.
5. crystal-coated light-emitting diodes as claimed in claim 1, is characterized in that, this covers brilliant semiconductor chip is that a sapphire substrate covers brilliant semiconductor chip, and this first reflector layer is laid on this sapphire substrate and covers the surface of the end face of brilliant semiconductor chip.
6. crystal-coated light-emitting diodes as claimed in claim 5, is characterized in that, this crystal-coated light-emitting diodes also comprises:
One packaging body, be arranged on this bearing substrate and coat this crystal covered chip, and have a phosphor powder layer in this packaging body, and this phosphor powder layer has a plurality of wavelength conversion particles, in order to change the wavelength of those light.
7. crystal-coated light-emitting diodes as claimed in claim 5, is characterized in that, this crystal-coated light-emitting diodes also comprises:
One phosphor powder layer, have a plurality of wavelength conversion particles, coats respectively on those light-emitting areas, is used for changing the wavelength of those light.
8. crystal-coated light-emitting diodes as claimed in claim 1, is characterized in that, this covers brilliant semiconductor chip is that a silicon carbide substrate covers brilliant semiconductor chip, and this first reflector layer is to be laid on this silicon carbide substrate to cover the surface of the end face of brilliant semiconductor chip.
9. a backlight module, is characterized in that, this backlight module comprises:
One light guide plate, comprise a plurality of grooves and a light inlet bottom surface, and those groove compartment of terrains are positioned on this light inlet bottom surface; And
A plurality of crystal-coated light-emitting diodes, stretch into respectively in those grooves, and each those crystal-coated light-emitting diodes comprises:
One bearing substrate; And
One covers brilliant semiconductor chip, is positioned on this bearing substrate, and is electrically connected this bearing substrate, and this covers brilliant semiconductor chip and comprises:
One end face, this bearing substrate relatively;
A plurality of light-emitting areas, around and connect this end face; And
One first reflector layer, be positioned at the surface of this end face, is used for changing the direction of a plurality of light, so that light is respectively from those light-emitting areas output.
10. backlight module as claimed in claim 9, is characterized in that, this backlight module also comprises:
One second reflector layer, be arranged in this crystal-coated light-emitting diodes surface of one of this end face setting bottom surface relatively, is used for changing the direction of those light, so that light is respectively from those light-emitting areas output.
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