CN103399406A - Diffractive optical element for shaping gauss beam into flat-topped beam, and preparation method thereof - Google Patents
Diffractive optical element for shaping gauss beam into flat-topped beam, and preparation method thereof Download PDFInfo
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Abstract
The invention provides a new diffractive optical element for shaping a gauss beam into a flat-topped beam, and the diffractive optical element is called DOE for short; the invention also provides a preparation method of the DOE. Grooves or steps with different shapes and sizes are prepared in the center of a quartz substrate, and the DOE is then arranged at the different positions of a light path and is matched with a beam expanding collimation lens and a focusing lens, so that the flat-topped beam can be realized. The DOE has the outstanding advantages of being high in energy transmittance, less sensitive to the incident laser mode change, and simple and flexible in installation and use.
Description
Technical field
The present invention relates to the laser beam shaping technical field, refering in particular to a kind of is the diffraction optical element and preparation method thereof of flat top beam by Gauss beam reshaping.
Background technology
At present, the Laser Processing industry especially development of laser drilling device, laser welding apparatus and laser display apparatus has proposed more and more higher requirement to beam quality, on the one hand, retrofit requires the hot spot of laser more and more less, and laser drilling device can be realized the punching of tens of microns of diameters at present.On the other hand, it is that flat-top distributes that retrofit requires the hot spot of laser, rather than Gaussian distribution.So-called flat-top distributes and refers in hot spot inner laser energy even.The characteristics of Gaussian distribution are that central energy is high, and edge energy is little.Gaussian beam there will be for punching that central punch speed is fast, punching speed in edge waits problem slowly; Edge welds the problems such as insufficient for laser bonding there will be the center welding fully.It is the flat-head type hot spot that the laser display industry also requires hot spot.
Realize that at present the method that Gauss turns flat-top mainly contains following several.
The first, non-toroidal lens.Non-toroidal lens is different from traditional concave-convex lens, and its curved surface has special pattern requirement.Its advantage is can realize near hundred-percent diffraction efficiency.But difficulty of processing is very big, is difficult for batch production.In addition, non-toroidal lens can only obtain circular flat-top hot spot, so its range of application is restricted greatly.
The second, microlens array.The principle of microlens array is fairly simple.At first use the lenticule of compound eye structural that incident light is divided into to several divided beams, thereby then use another lenticule that divided beams is converged and produces flat top beam.Lenticular advantage is to produce in batches, but high to technological requirement, needs accurately and evenly to control the parameters such as each lenticular curvature, diameter, and in addition, single lenticule can not be realized flat-top light, must two be combined with.This has proposed high requirement to two lenticular alignings.
The third, the diaphragm method.The diaphragm ratio juris be use aperture diaphragm that the marginal portion of Gaussian beam " is cut out " thus obtain flat top beam.Its advantage is simple, and shortcoming is can the more energy of loss.
The 4th kind, diffraction optical element (
DIffractive
OPtical
ELement, DOE) shaping methods.The diffraction optical element utilization be diffraction principle, at element surface, prepare the step of certain depth, light beam by the time produce different optical path differences, thereby then interfere, produce the flat-top hot spot.Diffraction element realize advantage that Gauss turns flat-top be flexibility ratio high-angle of divergence of final light beam, hot spot pattern etc. can control flexibly, difficult point is complicated process of preparation.
Summary of the invention
The present invention proposes a kind of new Gauss that realizes and turns the diffraction optical element of flat-top, is called for short DOE.The groove or the step that in the quartz substrate center, prepare difformity, different size, then be placed in DOE the diverse location of light path, with beam-expanding collimation mirror and condenser lens, coordinates, and realizes flat top beam.
Technical scheme provided by the invention is as follows:
A kind of is the diffraction optical element of flat top beam by Gauss beam reshaping, and described diffraction optical element is called for short the DOE(structure as shown in Figure 1), described DOE can be shaped as circular Gaussian beam square or circular flat light beam, it is characterized in that,
The DOE structure that realizes square flat top beam is that the central area of quartz substrate has square indentations or step; The length of side of groove or step is determined according to application requirements; Height or the degree of depth of step or groove are determined by formula: h=λ/2* (n-1), and wherein, h is bench height or depth of groove, and λ is laser wavelength of incidence, and n is the substrate refractive index;
The DOE structure that realizes the circular flat light beam is that the central area of quartz substrate has cylinder shape groove or step; The diameter of groove or step is determined according to application requirements; The height of step or groove or the degree of depth determine h=λ/2* (n-1) by formula, and wherein, h is bench height or depth of groove, and λ is laser wavelength of incidence, and n is the substrate refractive index.
The material category of described DOE is quartz glass, simple glass, ZnSe etc.
A kind of is the method for flat top beam by Gauss beam reshaping, utilizes described DOE that Gauss beam reshaping is to flat top beam, comprises following several mode:
The first, at first use the beam-expanding collimation lens by laser bundle-enlarging collimation, then passes DOE, at shaping device rear, places condenser lens and obtain the flat-top hot spot;
The second, before DOE is placed on to parallel beam expand device, places condenser lens and obtain the flat-top hot spot after parallel beam expand device;
The third, be put into condenser lens by DOE and obtain the flat-top hot spot before;
The 4th kind, DOE is put into to beam-expanding collimation system inside, then be put into condenser lens and obtain the flat-top hot spot before.
The preparation method of described diffraction optical element comprises:
1) according to final outgoing beam parameter and incident beam parameter, carry out the design of DOE, generate layout file and lithography mask version;
2) at quartz substrate surface spin coating photoresist, then utilize lithography mask version to carry out photoetching, generate photoetching offset plate figure; For fluted body DOE, after photoetching offset plate figure, graphical distribution is: there is photoresist in other zone without photoresist in the quartz substrate center; For the capable DOE of step, carve glue pattern after graphical distribution be: the quartz substrate center photoresist is arranged and other zone without photoresist;
3) utilize photoetching offset plate figure to be etch mask, use dry etching method that photoetching offset plate figure is transferred on quartz substrate;
4) photoresist of remnants is removed.
The preparation method of described diffraction optical element comprises:
1) according to the parameter request of the parameter of incident light and the flat-top hot spot that finally need to obtain, carry out the design of diffraction shaping element, after design, export design document; Design document is converted to the GDS file, with GDS file generated lithography mask version file;
2) spin coating photoresist on quartz substrate;
3) utilize the lithography mask version file to prepare lithography mask version, use lithography mask version to the photoresist on quartz substrate expose, development, photographic fixing operation, thereby on quartz substrate, stay the photoresist consistent with design configuration; This photoresist will be as the mask of subsequent technique; For fluted body DOE, after photoetching offset plate figure, graphical distribution is: there is photoresist in other zone without photoresist in the quartz substrate center; For the capable DOE of step, carve glue pattern after graphical distribution be: the quartz substrate center photoresist is arranged and other zone without photoresist; Also can use crome metal, nickel, the aluminium mask as subsequent etching technique;
4) use etching technics that photoetching offset plate figure is transferred on quartz substrate, on quartz substrate, form the pattern consistent with design configuration; Described etching technics is dry etch process or wet-etching technology; Wherein dry etch process comprises reactive ion beam etching (RIBE), ion beam etching, inductively coupled plasma reactive ion beam etching (RIBE); Wet-etching technology comprises hf etching, buffered hydrofluoric acid etching;
5) etch mask is removed.Acetone is used in the removal of photoresist mask; Mineral acid or dioxysulfate aqueous solution are used in the removal of metal mask.
DOE involved in the present invention has following outstanding advantages:
1. the energy transmitance is high.In the situation that evaporation anti-reflection film energy transmitance can not arrive 92-93%.In the situation of two-sided evaporation anti-reflection film, can reach nearly 100%.
2. more insensitive to the incident laser patterns of change.Actual test experiments shows that the patterns of change of incident laser is less on final flat-top optical quality impact.
3. install and use simple.Traditional multistage DOE to install and requiring of using high, on light path, the position of each optical element, size, relative position all will accurately be controlled.DOE of the present invention is relatively loose.
4. use flexible aspect.DOE of the present invention can use positions different in light path.Tradition DOE generally can only be placed on after the beam-expanding collimation mirror before condenser lens.
The accompanying drawing explanation
The basic structure of Fig. 1 element of the present invention.Wherein, 101-step; The 102-substrate; The 103-groove.
Fig. 2 actual shaping effect schematic diagram of the present invention.
Four kinds of use-patterns of Fig. 3 invention:
Fig. 3 a the first use-pattern: before DOE is positioned at condenser lens, obtain the flat-top hot spot after line focus.
Fig. 3 b the second use-pattern: DOE is positioned at after the beam-expanding collimation mirror before condenser lens, after line focus, obtains the flat-top hot spot.
The third use-pattern of Fig. 3 c: before DOE is positioned at beam-expanding collimation mirror and condenser lens, obtain the flat-top hot spot after line focus.
The 4th kind of use-pattern: DOE of Fig. 3 d is positioned in the middle of the beam-expanding collimation mirror and, before condenser lens, after line focus, obtains the flat-top hot spot.
Embodiment
DOE of the present invention should coordinate with other optical elements can obtain final needed flat-top hot spot.Other optical element refers to: the beam-expanding collimation mirror, for original incident beam is expanded and collimates, the beam waist diameter after collimation should be greater than the active area size of DOE.For example, for square step or groove sample, the beam waist diameter after collimation should cover square step or groove Zone Full fully.For step cutting pattern or groove sample, the beam waist diameter after collimation should be greater than the diameter of step cutting pattern or groove at least more than 2mm.Condenser lens, can coalescence produce final flat top beam for the hot spot by after the DOE shaping.
Concrete embodiment comprises:
1, according to the parameter (comprising spot size, operating distance etc.) of the parameter (comprising wavelength, beam waist diameter, the angle of divergence) of incident light and the flat-top hot spot that finally need to obtain, require to carry out the design of diffraction shaping element.After design, export design document.Design document can be converted to the GDS file, and the GDS file can generate the lithography mask version file;
2, spin coating photoresist on quartz substrate, the kind of photoresist can be 4620,9912,6130 and other photoresist;
3, utilize the lithography mask version file to prepare lithography mask version, use lithography mask version to the photoresist on quartz substrate expose, development, photographic fixing operation, thereby on quartz substrate, stay the photoresist consistent with design configuration; This photoresist will be as the mask of subsequent technique; Simultaneously, also can use the mask of other materials as subsequent etching technique, for example crome metal, nickel, aluminium and other metal;
4, use the etching technics in semiconducter process that photoetching offset plate figure is transferred on quartz substrate, on quartz substrate, form the pattern consistent with design configuration.Wherein dry etch process includes but not limited to the methods such as reactive ion beam etching (RIBE), ion beam etching, inductively coupled plasma reactive ion beam etching (RIBE), and wet-etching technology includes but not limited to the wet-etching technologies such as hydrofluorite, buffered hydrofluoric acid.
5, etch mask is removed.Acetone is used in the removal of photoresist mask, and mineral acid or dioxysulfate aqueous solution are used in the removal of metal mask.
Below with embodiment, the present invention is further detailed:
Embodiment 1: the DOE(fluted body that realizes square flat-top hot spot)
One laser beam incident light source is arranged, and its wavelength is 532nm, and spot diameter is 2mm.Through DOE, require to obtain the square flat-top hot spot that the length of side is 200um applying under the focus lamp that focal length is 200mm.In order to obtain best shaping effect, need at first beam-expanding collimation be 6mm to diameter by incident light source about.
Performing step is as follows:
The first step, carry out the theoretical modeling design according to above-mentioned requirements, and generate the GDS file, and in the GDS file, the length of side of square indentations is 4mm;
Second step, have spin coating photoresist on the lithography mask version of crome metal at evaporation, then use the mask plate Preparation equipment according to the GDS file, photoresist to be exposed;
The 3rd step, carry out developing fixing technique to the lithography mask version after exposure, finally on lithography mask version, generates the figure consistent with the GDS file;
The 4th step, the corrosive liquid of use chromium or the chromium that dry etch process will not have photoresist masking are removed;
The 5th step, use acetone or equipment for burning-off photoresist by plasma to remove photoresist;
The 6th step, spin coating photoresist on quartz substrate, quartz substrate can be the disk of diameter 25mm or the substrate of other size;
The 7th step, use the lithography mask version prepare to the photoresist on quartz substrate expose, development and photographic fixing operation, thereby on quartz substrate, obtain the photoetching offset plate figure consistent with the GDS file that designs;
The 8th step, use the etching technics in semiconducter process that photoetching offset plate figure is transferred on quartz substrate, on quartz substrate, form the square indentations consistent with design configuration, the length of side of square indentations is 4mm, wherein dry etch process includes but not limited to the methods such as reactive ion beam etching (RIBE), ion beam etching, inductively coupled plasma reactive ion beam etching (RIBE), and wet-etching technology includes but not limited to the wet-etching technologies such as hydrofluorite, buffered hydrofluoric acid; Quartzy etching depth is by formula h=λ/2* (n-1) decision, and in this example, wavelength is 532nm, and the refractive index of quartz substrate under 532nm is about 1.45, so etching depth is 532/2* (1.45-1)=591nm;
The 9th step, use acetone or equipment for burning-off photoresist by plasma to remove the photoresist that participates on quartz substrate;
The tenth step, so far, the DOE element prepares complete;
The 11 step, after the DOE preparation completes, carry out building of actual light path, completes the acquisition of final flat-top hot spot.After the laser instrument bright dipping, at first through the beam-expanding collimation mirror, it is expanded to diameter 6mm, the light beam after beam-expanding collimation incides the DOE surface.It should be noted that the beam center after beam-expanding collimation will overlap fully with the center of square indentations.Light beam through DOE reenters the focus lamp surface that is mapped to focal length 200mm, and then near the focus lamp focus, will obtain diameter is the square flat-top hot spot of 200um.
Embodiment 2: the DOE(stepped ramp type of realizing square flat-top hot spot)
One laser beam incident light source is arranged, and its wavelength is 532nm, and spot diameter is 2mm.Through DOE, require to obtain the square flat-top hot spot that the length of side is 200um applying under the focus lamp that focal length is 200mm.In order to obtain best shaping effect, need at first beam-expanding collimation be 6mm to diameter by incident light source about.
Performing step ginseng embodiment 1, difference is:
The first step, carry out the theoretical modeling design according to above-mentioned requirements, and generate the GDS file, and in the GDS file, the length of side of square step is 4mm;
The 7th step, use the lithography mask version prepare to the photoresist on quartz substrate expose, development and photographic fixing operation, thereby on quartz substrate, obtain the photoetching offset plate figure consistent with the GDS file that designs;
The 8th step, as described in Example 1, it is that the length of side is the square step of 4mm that institute difference is in what obtain;
All the other steps are identical with embodiment 1.
Embodiment 3 realizes the DOE(fluted body of circular flat hot spot):
One laser beam incident light source is arranged, and its wavelength is 532nm, and spot diameter is 2mm.Through DOE, require to obtain the circular flat hot spot that diameter is 200um applying under the focus lamp that focal length is 200mm.In order to obtain best shaping effect, need at first beam-expanding collimation be 6mm to diameter by incident light source about.
Performing step ginseng embodiment 1, difference is:
The first step, carry out the theoretical modeling design according to above-mentioned requirements, and generate the GDS file, and diameter circular in the GDS file is 4mm;
The 8th step, as described in Example 1, it is that diameter is the circular groove of 4mm that institute difference is in what obtain;
All the other steps are identical with embodiment 1.
Embodiment 4 realizes the DOE(stepped ramp type of circular flat hot spot):
One laser beam incident light source is arranged, and its wavelength is 532nm, and spot diameter is 2mm.Through DOE, require to obtain the circular flat hot spot that diameter is 200um applying under the focus lamp that focal length is 200mm.In order to obtain best shaping effect, need at first beam-expanding collimation be 6mm to diameter by incident light source about.
Performing step ginseng embodiment 1, difference is:
The first step, carry out the theoretical modeling design according to above-mentioned requirements, and generate the GDS file, and diameter circular in the GDS file is 4mm;
The 8th step, as described in Example 1, it is that diameter is the step cutting pattern of 4mm that institute difference is in what obtain;
All the other steps are identical with embodiment 1.
Actual shaping effect of the present invention as shown in Figure 2.
Actual use-pattern of the present invention as shown in Figure 3, has use-pattern possible in 4:
Fig. 3 a the first use-pattern of the present invention: before DOE is positioned at condenser lens, obtain the flat-top hot spot after line focus.
Fig. 3 b the second use-pattern of the present invention: DOE is positioned at after the beam-expanding collimation mirror before condenser lens, after line focus, obtains the flat-top hot spot.
Fig. 3 c the third use-pattern of the present invention: before DOE is positioned at beam-expanding collimation mirror and condenser lens, obtain the flat-top hot spot after line focus.
Fig. 3 d the 4th kind of use-pattern: DOE of the present invention is positioned in the middle of the beam-expanding collimation mirror and, before condenser lens, after line focus, obtains the flat-top hot spot.
Claims (10)
1. one kind is the diffraction optical element of flat top beam by Gauss beam reshaping, and described diffraction optical element is called for short DOE, and described DOE can be shaped as circular Gaussian beam square or circular flat light beam, it is characterized in that,
The DOE structure that realizes square flat top beam is that the central area of quartz substrate has square indentations or step; The length of side of groove or step is determined according to application requirements; Height or the degree of depth of step or groove are determined by formula: h=λ/2* (n-1), and wherein, h is bench height or depth of groove, and λ is laser wavelength of incidence, and n is the substrate refractive index;
The DOE structure that realizes the circular flat light beam is that the central area of quartz substrate has cylinder shape groove or step; The diameter of groove or step is determined according to application requirements; The height of step or groove or the degree of depth determine h=λ/2* (n-1) by formula, and wherein, h is bench height or depth of groove, and λ is laser wavelength of incidence, and n is the substrate refractive index.
2. diffraction optical element as claimed in claim 1, is characterized in that, the material category of described DOE is quartz glass, simple glass, ZnSe.
3. one kind is the method for flat top beam by Gauss beam reshaping, it is characterized in that, utilizes DOE claimed in claim 1 that Gauss beam reshaping is to flat top beam, comprises following several mode:
The first, at first use the beam-expanding collimation lens by laser bundle-enlarging collimation, then passes DOE, at shaping device rear, places condenser lens and obtain the flat-top hot spot;
The second, before DOE is placed on to parallel beam expand device, places condenser lens and obtain the flat-top hot spot after parallel beam expand device;
The third, be put into condenser lens by DOE and obtain the flat-top hot spot before;
The 4th kind, DOE is put into to beam-expanding collimation system inside, then be put into condenser lens and obtain the flat-top hot spot before.
4. the preparation method of diffraction optical element claimed in claim 1 comprises:
1) according to final outgoing beam parameter and incident beam parameter, carry out the design of DOE, generate layout file and lithography mask version;
2) at quartz substrate surface spin coating photoresist, then utilize lithography mask version to carry out photoetching, generate photoetching offset plate figure; For fluted body DOE, after photoetching offset plate figure, graphical distribution is: there is photoresist in other zone without photoresist in the quartz substrate center; For the capable DOE of step, carve glue pattern after graphical distribution be: the quartz substrate center photoresist is arranged and other zone without photoresist;
3) utilize photoetching offset plate figure to be etch mask, use dry etching method that photoetching offset plate figure is transferred on quartz substrate;
4) photoresist of remnants is removed.
5. preparation method as claimed in claim 4, is characterized in that, the outgoing beam parameter described in step 1) comprises: spot size, operating distance.
6. preparation method as claimed in claim 4, is characterized in that, the incident beam parameter described in step 1) comprises wavelength, beam waist diameter, the angle of divergence.
7. the preparation method of diffraction optical element claimed in claim 1 comprises:
1) according to the parameter request of the parameter of incident light and the flat-top hot spot that finally need to obtain, carry out the design of diffraction shaping element, after design, export design document; Design document is converted to the GDS file, with GDS file generated lithography mask version file;
2) spin coating photoresist on quartz substrate;
3) utilize the lithography mask version file to prepare lithography mask version, use lithography mask version to the photoresist on quartz substrate expose, development, photographic fixing operation, thereby on quartz substrate, stay the photoresist consistent with design configuration; This photoresist will be as the mask of subsequent technique; For fluted body DOE, after photoetching offset plate figure, graphical distribution is: there is photoresist in other zone without photoresist in the quartz substrate center; For the capable DOE of step, carve glue pattern after graphical distribution be: the quartz substrate center photoresist is arranged and other zone without photoresist;
4) use etching technics that photoetching offset plate figure is transferred on quartz substrate, on quartz substrate, form the pattern consistent with design configuration;
5) etch mask is removed.
8. preparation method as claimed in claim 7, is characterized in that, in step 3), uses crome metal, nickel, the aluminium mask as subsequent etching technique.
9. preparation method as claimed in claim 7, is characterized in that, in step 4), described etching technics is dry etch process or wet-etching technology; Wherein dry etch process comprises reactive ion beam etching (RIBE), ion beam etching, inductively coupled plasma reactive ion beam etching (RIBE); Wet-etching technology comprises hf etching, buffered hydrofluoric acid etching.
10. preparation method as claimed in claim 7, is characterized in that, in step 5), acetone is used in the removal of photoresist mask; Mineral acid or dioxysulfate aqueous solution are used in the removal of metal mask.
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| CN103645563A (en) * | 2013-12-25 | 2014-03-19 | 苏州德龙激光股份有限公司 | Laser shaping device |
| CN104111539A (en) * | 2014-07-25 | 2014-10-22 | 鲁东大学 | Array light spot generator and generating method |
| CN104765087A (en) * | 2015-04-24 | 2015-07-08 | 北京润和微光科技有限公司 | Diffraction optical element shaping Gaussian beam into one-dimensional flattened beam or rectangular flattened beam |
| CN104785921A (en) * | 2014-01-16 | 2015-07-22 | 大族激光科技产业集团股份有限公司 | Laser reflector path transmission system and machining equipment |
| CN106409733A (en) * | 2016-12-06 | 2017-02-15 | 中国科学院微电子研究所 | Laser annealing device and method |
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