CN103396282A - Film bridge type igniter - Google Patents
Film bridge type igniter Download PDFInfo
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- CN103396282A CN103396282A CN2013103304682A CN201310330468A CN103396282A CN 103396282 A CN103396282 A CN 103396282A CN 2013103304682 A CN2013103304682 A CN 2013103304682A CN 201310330468 A CN201310330468 A CN 201310330468A CN 103396282 A CN103396282 A CN 103396282A
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Abstract
The invention provides a bridge type igniter adopting a multi-layer energetic film, and belongs to the field of initiating explosive device production. The igniter comprises a ceramic substrate, a B/Ti, CuO/Al or Ni/Al multi-layer energetic film, a TaN ignition film bridge arranged between the middle part of the substrate and the multi-layer energetic film, and electrodes arranged on upper surfaces at two sides of the TaN ignition film bridge. According to the igniter, the TaN ignition film bridge especially for the ignition reaction of the energetic film is arranged between the substrate and the multi-layer energetic film, the multi-layer energetic film can be ignited by utilizing the TaN ignition film bridge under the action of ignition current of about 3.0A, so that the multi-layer energetic film can react to produce mass heat to ignite gunpowder, fuel or fire charge. Therefore, the bridge type igniter has the characteristics that the igniter is minimized, small-current electricity is adopted to be matched with a large-area multi-layer energetic film, heat energy required by ignition can be effectively improved by utilizing electric energy and chemical energy, the safety and reliability of ignition can be improved, and the igniter is good in consistence and performance stability, is advantageous to batch production, high in production efficiency, low in cost, and convenient to transport and store.
Description
Technical field
The invention belongs to the lighter for ignition in the priming system production field, particularly a kind of bridge-type lighter for ignition that adopts multilayer to contain the energy film.
Background technology
Priming system such as lighter for ignition, detonator etc. all are widely used with civil area Aeronautics and Astronautics, missile launching, mine blasting etc. are military.Priming system is that gunpowder or explosive are housed, by producing burning or blast after external stimulus, with the gunpowder that ignites, fired charge or do the disposable components and parts of mechanical work and the general name of device.Electric spark workpiece is the priming system that utilizes controlling electric energy.Lighter for ignition is a kind ofly can provide enough energy to light the device of gunpowder, fuel or fired charge etc. in moment, and the bridge-type lighter for ignition is a kind of electrical igniter.Conventional metal bridge silk formula lighter for ignition has simple in structure, the advantages such as easy realization, need manual setting but exist, the lighter for ignition top layer needs the manual application priming charge, amount and the ignition wire length of priming charge coating are difficult to accurate control, homogeneity of product is poor, and the ignition wire two ends are generally welding, and contact resistance is large; And priming charge easy deliquescence under wet environment causes again stability and the poor reliability of performance; In addition generic point gunpowder self kindling temperature than low, potential safety hazard is large, producers' personnel safety is threatened large.
That the film point firebridge has is integrated, miniaturization, mass, characteristics such as consistence that cost is low and good.At present, the research emphasis of thin film bridge type lighter for ignition both domestic and external mainly concentrate on metallic membrane bridge, semiconductor film bridge and multilayer contain can film bridge.Wherein metallic membrane bridge lighter for ignition material mostly is the metals such as platinum, chromium, nickel-chromium and titanium; Be that CN 202382273 U, name disclose a kind of lighter for ignition of being made the film bridge by the Ni-Cr alloy in being called the patent document of " a kind of Ni-Cr alloy firm bridge lighter for ignition of low ignition voltage " at notification number, this lighter for ignition comprises substrate (sheet), be located at suprabasil barrier film, be located at the Ni-Cr alloy ignition element on barrier film, and wire bonds dish (sheet).Although this metallic film bridge lighter for ignition has simple in structure, the required low characteristics of ignition voltage, one is metallic membrane bridge poor stability under the severe environment such as low temperature, static, radio frequency, high-altitude electromagnetic pulse and stray current; The 2nd, storage characteristics, the moisture resistance of metallic membrane bridge are poor, and perishable, oxidation; The 3rd, the thermal discharge of metallic membrane bridge own is less, generally also needs manual adding to be coated with priming charge when application.And semiconductor film bridge lighter for ignition is to make the lighter for ignition of initiating bridge of semiconductor film or metal-semiconductor film; The semiconductor film resistor bridge mostly is negative temperature coefficient, along with firing up, and resistance decreasing, ignition energy reduces rapidly, and the reliability of its igniting also decreases, thereby when application still needs manual adding to be coated with priming charge.Contain can film the bridge lighter for ignition be to utilize chemical reaction can occur and emit the class multilayer film bridge that two kinds of film alternating deposits of energy form, contain the laminated film that can thin-film material be generally conduction, mainly comprise two types of chemical reaction film and alloying reaction films.at " preparation and property that multilayer contains the energy film characterizes " (" priming system ", 2009 (1): 9-11. author: Wang Liling, Jiang Xiaohua, He Bi etc.) introduced in a literary composition a kind of take the Ti(titanium) film is as bottom and be deposited on substrate and two electrode surfaces, deposition B(boron on this Ti film again) B/Ti multilayer contains lighter for ignition and performance that can film, this type of directly adopts multilayer to contain the lighter for ignition of energy film bridge in order to make it meet the required energy (reaction heat) of igniting, need adopt larger bridge district area, the large larger striking current of employing that in use just needs of bridge district area, the lighter for ignition that this type of multilayer contains the energy film generally need adopt the above large electric current of 5A just can reach the purpose of igniting, thereby the volume of required constant current source is larger, affect the miniaturization of lighter for ignition.
Summary of the invention
The objective of the invention is the disadvantage that exists for background technology, a kind of thin film bridge type lighter for ignition of research and design, reduce striking current to adopt the big area multilayer to contain on the basis that reaction heat can film be provided, take full advantage of electric energy and chemical energy and effectively improve the required heat energy of igniting, guarantee the reliability of lighting a fire, the security of using, transporting and storing and the purposes such as miniaturization of device.
Solution of the present invention is to contain between can film and set up (magnetron sputtering) one deck and be exclusively used in and make the TaN igniting film bridge that contains the reaction of can film catching fire in background technology substrate and multilayer, the both sides that two electrodes directly are divided into TaN igniting film bridge with overcome background technology directly adopt multilayer to contain can the igniting of film bridge or need large electric current or need contain and can add existing defects such as being coated with priming charge on the film bridge.Thereby, the present invention includes substrate, multilayer contains energy film and electrode, and key is to contain and can also be provided with one deck for making multilayer contain the TaN igniting film bridge that the energy film catches fire and reacts between film at substrate middle part and multilayer, and two electrodes directly are divided into the upper surface of the both sides of TaN igniting film bridge; TaN igniting film bridge is anchored on substrate by magnetron sputtering, and multilayer contains and can also by magnetron sputtering, closely be covered in respectively on TaN igniting film bridge middle part surface and substrate surface by film.
Above-mentioned multilayer contain can film for take B(boron) for the B/Ti multilayer of bottom contain can film or the CuO/Al multilayer take CuO as bottom contain can film or the Ni/Al multilayer contain the energy film; Wherein when adopting the Ni/Al multilayer to contain the energy film, in the Ni/Al multilayer, contain between energy film and TaN igniting film bridge and substrate and also be provided with aluminum oxide or insulating layer of silicon oxide.
thin film bridge type lighter for ignition of the present invention contains between can film and to have established one deck and be exclusively used in and make the TaN igniting film bridge that contains the reaction of can film catching fire in substrate and multilayer, at first the heat energy that utilizes TaN igniting film bridge to emit under the effect of 3.0A left and right striking current is lighted multilayer and is contained the energy film, multilayer is contained can emit a large amount of heat energy to reach the purpose of lighting gunpowder, fuel or fired charge by film reaction, the present invention adopts TaN igniting film bridge, because the TaN film has self-passivation and temperature coefficient of resistance (TCR, Temperature Coefficient of Resistance) can be adjusted to the characteristic that is close to zero, wherein self-passivation has strengthened the oxidation-resistance of igniting film bridge (resistance bridge), moisture resistance, storage stability, and the zero-resistance temperature coefficient makes TaN igniting film bridge insensitive to envrionment temperature, has better stability, resistance changes hardly when ignition temperature sharply raises simultaneously, make ignition process discharge stable energy, guarantee to make the larger area multilayer to contain can film to catch fire chemical reaction or the required heat energy of alloying reaction occur, having fully utilized simultaneously electric energy coordinates with chemical energy, the reliability and stability of igniting have been increased substantially, neither need to adopt larger striking current, again need to be on igniting film bridge the point of application gunpowder, in addition the present invention adopt on TaN igniting film bridge again deposition contain can the reactive multilayer film as: B/Ti, Ni/Al or CuO/Al etc., this type of multilayer film critical reaction temperature is higher, and is also safer.Thereby the present invention has on the basis of device miniaturization, the electric energy that adopts little electric current and big area multilayer contain and can film coordinate, take full advantage of electric energy and chemical energy has effectively improved the required heat energy of lighting a fire, the safety and reliability of igniting, the consistence of device and stable performance are good, and be conducive to normalized batch production, production efficiency is high, cost is low, transports, stores the characteristics such as convenient.
Description of drawings
Fig. 1 is structural representation of the present invention (A-A cutaway view Amplified image);
Fig. 2 is vertical view.
In figure: 1. electrode, 2. contain can film for multilayer, 3.TaN igniting film bridge, 3-1. initiating bridge district, 4. ceramic substrate.
Embodiment
Embodiment 1: the present embodiment is take the lighter for ignition of producing (long * wide * thick) 6mm * 3mm * 0.5mm as example, and the magnetron sputtering cavity adopts conventional multilayer to contain can film magnetron sputtering cavity; Its production method is:
Step 1. at first adopt acetone, alcohol, deionized water successively the ultrasonic cleaning diameter be the 76.2mm(3 inch) alumina ceramic substrate 4; Then alumina ceramic substrate 4 is placed in the back end vacuum and is evacuated to 5 * 10
-4In magnetron sputtering cavity below Pa, at logical argon gas 17sccm, logical nitrogen 0.5sccm, the vacuum chamber internal gas pressure rises to 0.6Pa, the direct current power source electric current is that 0.24A, voltage are under the condition of 320V, makes Ta target starter and sputter process 50 minutes, only deposits the thick approximately 1 μ m of TaN film to substrate;
2.1, apply photoresist material (the present embodiment adopt rotating speed 3000 turn whirl coating) on the substrate after step 1 sputter TaN film, then the temperature baking of 100 ℃ 5 minutes;
2.2 photoetching treatment: with (long * wide) its jackshaft district of 5.8 * 2.9mm(3-1, be 0.1X0.2mm) photolithography plate is over against plating the TaN film, adopt developing solution to remove the photoresist material that is exposed after 10 seconds through (lithography machine) exposure, then dry at the temperature of 100 ℃; Again substrate is put into HF/HNO
3/ H
2The O ratio is the corrosive fluid of 1:1:5, corrodes after 2 minutes, cleans successively with acetone, alcohol, and with nitrogen, dries up the TaN igniting film bridge 3 that namely obtains being placed on substrate 4;
Step 3. adopts the both sides of the TaN igniting film bridge 3 of conventional stripping method on step 2 gained substrate 4 to prepare the Al electrode:
3.1 after through applying photoresist material, with the temperature oven dry of 100 ℃, adopt the photolithography plate of Al electrode to aim at the substrate 4 that has prepared igniting film bridge 3, processes the photoresist material that is exposed with the developing solution removal after 20 seconds by photo-etching machine exposal, dry; Then back end vacuum 5x10 in the magnetron sputtering cavity
-4Following, the logical argon gas 17sccm of Pa, regulate that in chamber, vacuum pressure is to 0.6Pa, the power source electric current is that 0.32A, voltage are 360V, with 200 minutes depositing Al membrane electrodes of Al target starter and sputter approximately 3 μ m stop;
3.2 with the substrate of step 3.1 depositing Al membrane electrode 14 use acetone stripping photoresists and sputter at Al film on photoresist material and obtain rear, oven dry clean with alcohol and washed with de-ionized water;
Adopting mask means to contain the Neng Mode center take the bridge class mark as multilayer alternately adopts the B/Ti multilayer of rf magnetron sputtering B and magnetically controlled DC sputtering Ti to contain the energy film on the surface of TaN igniting film bridge 3 and substrate 4 successively; Each 50 layers of B, Ti films, wherein the 1st layer of thick 1 μ m of B, the after this thick 100nm that is of each layer B, Ti; The present embodiment is the 76.2mm(3 inch at diameter) the disposable ignition device of making altogether 200 (long * wide * thick) 6mm * 3mm * 0.5mm on alumina ceramic substrate 4;
Step 5. cutting process: the ignition device of (long * wide * thick) 6mm * 3mm * 0.5mm of each moulding on step 4 gained substrate is cut down respectively by laser scribing means.
The present embodiment is after tested: under the condition of striking current 3.0A, the ignition temperature of TaN reaches 3100 ℃, the heat energy 1.65J(joule that the burning of B/Ti multilayer film discharges).
Embodiment 2:
The present embodiment is to adopt the Ni/Al multilayer to contain the energy film as example: the making method of the processing of substrate 4, TaN igniting film bridge and membrane electrode 1 is all step 1-3 with embodiment 1() identical;
Step 5. adopts the Ni/Al multilayer of background technology magnetron sputtering take Al as bottom to contain the energy film: background technology alternately adopts magnetically controlled DC sputtering Ni/Al multilayer to contain the energy film successively on the aluminum oxide film of step 4 gained substrate, each 50 layers of each Al, Ni films, every layer thickness is 100nm.
Step 6. cutting process is also identical with embodiment 1.
Claims (2)
1. thin film bridge type lighter for ignition, comprise substrate, multilayer contains energy film and electrode, it is characterized in that containing and also being provided with one deck for making multilayer contain the TaN igniting film bridge that the energy film catches fire and reacts between film at substrate middle part and multilayer, and two electrodes directly are divided into the upper surface of the both sides of TaN igniting film bridge; TaN igniting film bridge is anchored on substrate by magnetron sputtering, and multilayer contains and can also by magnetron sputtering, closely be covered in respectively on TaN igniting film bridge middle part surface and substrate surface by film.
2. by the described thin film bridge type lighter for ignition of claim 1, it is characterized in that described multilayer contain can film be B/Ti multilayer take B as bottom contain can film or the CuO/Al multilayer take CuO as bottom contain can film or the Ni/Al multilayer contain can film; Wherein when adopting the Ni/Al multilayer to contain the energy film, in the Ni/Al multilayer, contain between energy film and TaN igniting film bridge and substrate and also be provided with aluminum oxide or insulating layer of silicon oxide.
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| CN201310330468.2A CN103396282B (en) | 2013-07-31 | 2013-07-31 | A kind of Film bridge type igniter |
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| CN201310330468.2A CN103396282B (en) | 2013-07-31 | 2013-07-31 | A kind of Film bridge type igniter |
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| CN103396282B CN103396282B (en) | 2016-03-30 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104692318A (en) * | 2015-03-26 | 2015-06-10 | 丑修建 | Energy containing metal bridged-film MEMS (Micro Electro Mechanical Systems) igniter and preparation method thereof for composite black body like energy concentrated structure |
| CN105423340A (en) * | 2015-11-30 | 2016-03-23 | 中国电子科技集团公司第四十八研究所 | Integrated thin film bridge igniter and preparation method thereof |
| CN105627841A (en) * | 2015-12-31 | 2016-06-01 | 贵州久联民爆器材发展股份有限公司 | Ignition method, structure and manufacturing method for electric detonator |
| CN105693442A (en) * | 2016-01-21 | 2016-06-22 | 电子科技大学 | Ignition bridge with lattice-shaped energy-containing thin film |
| CN105737681A (en) * | 2016-03-10 | 2016-07-06 | 中国振华集团云科电子有限公司 | Preparation method for bridge area of film bridge initiator |
| CN106123712A (en) * | 2016-08-09 | 2016-11-16 | 深圳炎泰丰华科技有限公司 | A kind of carbon film bridge silk and manufacturing process thereof |
| CN106783391A (en) * | 2016-12-26 | 2017-05-31 | 中国工程物理研究院化工材料研究所 | High voltage planar construction of switch based on flexible manufacturing technique and preparation method thereof |
| CN106765308A (en) * | 2016-11-28 | 2017-05-31 | 中国电子科技集团公司第四十八研究所 | A kind of direct insertion membrane bridge igniter and preparation method thereof |
| CN107121035A (en) * | 2017-06-28 | 2017-09-01 | 电子科技大学 | A kind of high-energy conversion ratio composite energy-containing membrane bridge |
| US11041442B2 (en) | 2017-12-06 | 2021-06-22 | Williams International Co., L.L.C. | Self-eroding single-use gas-turbine-engine igniter |
| CN113314470A (en) * | 2021-05-12 | 2021-08-27 | 湘潭大学 | Self-destructible chip device packaging structure and method integrating energy-containing semiconductor bridge |
| CN114015993A (en) * | 2021-11-02 | 2022-02-08 | 北京大学 | High-performance ternary energetic film ignition energy conversion element |
| CN114143962A (en) * | 2021-12-01 | 2022-03-04 | 重庆大学 | Al/CuO nano energetic product |
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104692318A (en) * | 2015-03-26 | 2015-06-10 | 丑修建 | Energy containing metal bridged-film MEMS (Micro Electro Mechanical Systems) igniter and preparation method thereof for composite black body like energy concentrated structure |
| CN105423340B (en) * | 2015-11-30 | 2018-07-06 | 中国电子科技集团公司第四十八研究所 | Integrated membrane bridge igniter and preparation method thereof |
| CN105423340A (en) * | 2015-11-30 | 2016-03-23 | 中国电子科技集团公司第四十八研究所 | Integrated thin film bridge igniter and preparation method thereof |
| CN105627841A (en) * | 2015-12-31 | 2016-06-01 | 贵州久联民爆器材发展股份有限公司 | Ignition method, structure and manufacturing method for electric detonator |
| CN105693442A (en) * | 2016-01-21 | 2016-06-22 | 电子科技大学 | Ignition bridge with lattice-shaped energy-containing thin film |
| CN105693442B (en) * | 2016-01-21 | 2019-02-15 | 电子科技大学 | A kind of latticed film initiating bridge containing energy |
| CN105737681A (en) * | 2016-03-10 | 2016-07-06 | 中国振华集团云科电子有限公司 | Preparation method for bridge area of film bridge initiator |
| CN106123712B (en) * | 2016-08-09 | 2019-02-05 | 深圳炎泰丰华科技有限公司 | A kind of carbon film igniter wire and its manufacturing process |
| CN106123712A (en) * | 2016-08-09 | 2016-11-16 | 深圳炎泰丰华科技有限公司 | A kind of carbon film bridge silk and manufacturing process thereof |
| CN106765308A (en) * | 2016-11-28 | 2017-05-31 | 中国电子科技集团公司第四十八研究所 | A kind of direct insertion membrane bridge igniter and preparation method thereof |
| CN106783391A (en) * | 2016-12-26 | 2017-05-31 | 中国工程物理研究院化工材料研究所 | High voltage planar construction of switch based on flexible manufacturing technique and preparation method thereof |
| CN106783391B (en) * | 2016-12-26 | 2019-04-23 | 中国工程物理研究院化工材料研究所 | High voltage planar construction of switch and preparation method thereof based on flexible manufacturing technique |
| CN107121035A (en) * | 2017-06-28 | 2017-09-01 | 电子科技大学 | A kind of high-energy conversion ratio composite energy-containing membrane bridge |
| CN107121035B (en) * | 2017-06-28 | 2018-08-21 | 电子科技大学 | A kind of high-energy conversion ratio composite energy-containing membrane bridge |
| US11041442B2 (en) | 2017-12-06 | 2021-06-22 | Williams International Co., L.L.C. | Self-eroding single-use gas-turbine-engine igniter |
| CN113314470A (en) * | 2021-05-12 | 2021-08-27 | 湘潭大学 | Self-destructible chip device packaging structure and method integrating energy-containing semiconductor bridge |
| CN113314470B (en) * | 2021-05-12 | 2024-04-05 | 湘潭大学 | Self-destructible chip device packaging structure and method for integrated energetic semiconductor bridge |
| CN114015993A (en) * | 2021-11-02 | 2022-02-08 | 北京大学 | High-performance ternary energetic film ignition energy conversion element |
| CN114143962A (en) * | 2021-12-01 | 2022-03-04 | 重庆大学 | Al/CuO nano energetic product |
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