CN103384926B - 有序的有机-有机多层生长 - Google Patents

有序的有机-有机多层生长 Download PDF

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Publication number
CN103384926B
CN103384926B CN201180049657.1A CN201180049657A CN103384926B CN 103384926 B CN103384926 B CN 103384926B CN 201180049657 A CN201180049657 A CN 201180049657A CN 103384926 B CN103384926 B CN 103384926B
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crystalline organic
thin film
layers
crystalline
organic
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CN103384926A (zh
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S·R·弗雷斯特
R·R·伦特
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University of Michigan System
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54Organic compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/81Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/16Electron transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18Carrier blocking layers
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
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    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/191Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • HELECTRICITY
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    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/40Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
CN201180049657.1A 2010-10-13 2011-10-10 有序的有机-有机多层生长 Expired - Fee Related CN103384926B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US39278310P 2010-10-13 2010-10-13
US61/392,783 2010-10-13
US13/084,233 US8933436B2 (en) 2010-10-13 2011-04-11 Ordered organic-organic multilayer growth
US13/084,233 2011-04-11
PCT/US2011/055578 WO2012051101A2 (en) 2010-10-13 2011-10-10 Ordered organic-organic multilayer growth

Publications (2)

Publication Number Publication Date
CN103384926A CN103384926A (zh) 2013-11-06
CN103384926B true CN103384926B (zh) 2016-01-20

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US (2) US8933436B2 (https=)
EP (1) EP2628199B1 (https=)
JP (1) JP5840216B2 (https=)
KR (1) KR20130108579A (https=)
CN (1) CN103384926B (https=)
AU (1) AU2011313917B2 (https=)
CA (1) CA2812415A1 (https=)
TW (1) TW201220571A (https=)
WO (1) WO2012051101A2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10056519B2 (en) 2008-05-28 2018-08-21 Solar-Tectic, Llc Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
KR101747059B1 (ko) * 2011-06-21 2017-07-11 카티바, 인크. Oled 마이크로 공동 및 버퍼 층을 위한 물질과 그 생산 방법
WO2013083712A1 (en) * 2011-12-06 2013-06-13 Novaled Ag Organic light emitting device and method of producing
DE112013007882B4 (de) 2012-04-20 2025-10-02 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung
WO2014008395A1 (en) 2012-07-03 2014-01-09 University Of Vermont And State Agricultural College Methods for forming one or more crystalline layers on a substrate
KR20140043551A (ko) * 2012-09-24 2014-04-10 삼성디스플레이 주식회사 유기발광소자, 이를 포함하는 유기발광 표시패널 및 유기발광 표시패널의 제조방법
WO2015125653A1 (ja) * 2014-02-18 2015-08-27 シャープ株式会社 有機エレクトロルミネッセンス素子、及び、有機エレクトロルミネッセンスパネル
US9166188B1 (en) * 2014-06-10 2015-10-20 Arolltech Co., Ltd. Organic light emitting diode device
US9490453B2 (en) * 2014-10-06 2016-11-08 Winbond Electronics Corp. Quasi-crystal organic light-emitting display panel and method for simulating optical efficiency of the same
FR3027155B1 (fr) 2014-10-08 2018-01-12 Ecole Polytechnique Procede de fabrication d'un dispositif electronique, en particulier a base de nanotubes de carbone
CN119349566A (zh) 2015-09-08 2025-01-24 麻省理工学院 基于石墨烯的层转移的系统和方法
US10903073B2 (en) 2016-11-08 2021-01-26 Massachusetts Institute Of Technology Systems and methods of dislocation filtering for layer transfer
CN106854775B (zh) * 2016-11-11 2019-06-18 苏州大学 利用水-空气-有机溶剂三相界面制备有机半导体小分子单晶薄膜的方法
KR20190118189A (ko) 2017-02-24 2019-10-17 메사추세츠 인스티튜트 오브 테크놀로지 곡선형 초점면 어레이를 위한 장치 및 방법들
WO2018195152A1 (en) * 2017-04-18 2018-10-25 Massachusetts Institute Of Technology Systems and methods for fabricating semiconductor devices via remote epitaxy
WO2019068144A1 (en) * 2017-10-04 2019-04-11 Queensland University Of Technology TUNABLE SPECTRUM ENDOSCOPE COMPONENT
US10718726B2 (en) * 2017-10-13 2020-07-21 Infineon Technologies Austria Ag Method for determining the concentration of an element of a heteroepitaxial layer
CN108461640B (zh) * 2018-03-16 2020-01-31 中国科学院长春应用化学研究所 晶态有机电致发光二极管及其应用
CN108538905B (zh) * 2018-05-31 2021-03-16 武汉华星光电半导体显示技术有限公司 Oled发光器件及oled显示装置
US20210125826A1 (en) 2018-06-22 2021-04-29 Massachusetts Institute Of Technology Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles
JP7260885B2 (ja) * 2019-12-05 2023-04-19 浙江大学 有機単結晶ヘテロ接合複合膜、その作製方法及び用途
CN114497407A (zh) * 2021-12-31 2022-05-13 云谷(固安)科技有限公司 发光器件、发光器件的制备方法及显示装置
US20240117521A1 (en) * 2022-10-03 2024-04-11 The Trustees Of Princeton University Method and system for growing a lattice matched, multilayer, organic crystal heterostructure

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078113B2 (en) 2001-08-29 2006-07-18 The University Of Southern California Organic light emitting devices having carrier transporting layers comprising metal complexes
US6806491B2 (en) * 2002-04-03 2004-10-19 Tsinghua University Organic light-emitting devices
AU2004221377B2 (en) 2003-03-19 2009-07-16 Heliatek Gmbh Photoactive component comprising organic layers
CN1846461A (zh) * 2003-09-24 2006-10-11 日东电工株式会社 取向生长的有机分层结构及其制作方法
US7291223B2 (en) 2003-09-24 2007-11-06 Nitto Denko Corporation Epitaxial organic layered structure and method for making
US7655961B2 (en) * 2003-10-02 2010-02-02 Maxdem Incorporated Organic diodes and materials
JP2005303027A (ja) * 2004-04-13 2005-10-27 Nissan Motor Co Ltd 半導体装置
US7776456B2 (en) 2004-12-03 2010-08-17 Universal Display Corporation Organic light emitting devices with an emissive region having emissive and non-emissive layers and method of making
US20060269782A1 (en) * 2005-05-25 2006-11-30 Eastman Kodak Company OLED electron-transporting layer
EP1998386B1 (en) * 2006-03-20 2015-02-25 Panasonic Corporation Organic thin film solar cell
US20070243658A1 (en) 2006-04-14 2007-10-18 Katsura Hirai Production method of crystalline organic semiconductor thin film, organic semiconductor thin film, electronic device, and thin film transistor
CN100555702C (zh) 2006-04-29 2009-10-28 中国科学院长春应用化学研究所 有机半导体晶体薄膜及弱取向外延生长制备方法和应用
US11031567B2 (en) * 2006-07-11 2021-06-08 The Regents Of The University Of Michigan Efficient solar cells using all-organic nanocrystalline networks
CN101785128B (zh) 2007-08-24 2016-04-27 密歇根大学董事会 有序结晶有机膜的生长
JP5360197B2 (ja) * 2009-03-26 2013-12-04 コニカミノルタ株式会社 有機光電変換素子、それを用いた太陽電池及び光センサアレイ
JP5612084B2 (ja) 2009-06-03 2014-10-22 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン 長距離秩序を有する有機膜を有した有機電子デバイスの構造テンプレーティング

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WO2012051101A3 (en) 2012-05-31
US9306184B2 (en) 2016-04-05
EP2628199A4 (en) 2014-10-22
JP5840216B2 (ja) 2016-01-06
JP2014500395A (ja) 2014-01-09
AU2011313917A1 (en) 2013-04-11
US20150179968A1 (en) 2015-06-25
TW201220571A (en) 2012-05-16
WO2012051101A2 (en) 2012-04-19
AU2011313917B2 (en) 2015-06-11
CA2812415A1 (en) 2012-04-19
US20120091436A1 (en) 2012-04-19
CN103384926A (zh) 2013-11-06
US8933436B2 (en) 2015-01-13
EP2628199B1 (en) 2015-09-02
EP2628199A2 (en) 2013-08-21
KR20130108579A (ko) 2013-10-04

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