CN103384926B - 有序的有机-有机多层生长 - Google Patents

有序的有机-有机多层生长 Download PDF

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CN103384926B
CN103384926B CN201180049657.1A CN201180049657A CN103384926B CN 103384926 B CN103384926 B CN 103384926B CN 201180049657 A CN201180049657 A CN 201180049657A CN 103384926 B CN103384926 B CN 103384926B
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crystalline organic
thin film
layers
crystalline
organic
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CN103384926A (zh
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S·R·弗雷斯特
R·R·伦特
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University of Michigan System
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
CN201180049657.1A 2010-10-13 2011-10-10 有序的有机-有机多层生长 Expired - Fee Related CN103384926B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US39278310P 2010-10-13 2010-10-13
US61/392,783 2010-10-13
US13/084,233 2011-04-11
US13/084,233 US8933436B2 (en) 2010-10-13 2011-04-11 Ordered organic-organic multilayer growth
PCT/US2011/055578 WO2012051101A2 (en) 2010-10-13 2011-10-10 Ordered organic-organic multilayer growth

Publications (2)

Publication Number Publication Date
CN103384926A CN103384926A (zh) 2013-11-06
CN103384926B true CN103384926B (zh) 2016-01-20

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US (2) US8933436B2 (https=)
EP (1) EP2628199B1 (https=)
JP (1) JP5840216B2 (https=)
KR (1) KR20130108579A (https=)
CN (1) CN103384926B (https=)
AU (1) AU2011313917B2 (https=)
CA (1) CA2812415A1 (https=)
TW (1) TW201220571A (https=)
WO (1) WO2012051101A2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10056519B2 (en) 2008-05-28 2018-08-21 Solar-Tectic, Llc Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
CN106981582A (zh) * 2011-06-21 2017-07-25 科迪华公司 用于oled微腔和缓冲层的材料和方法
JP6139552B2 (ja) * 2011-12-06 2017-05-31 ノヴァレッド ゲーエムベーハー 有機発光素子およびその製造方法
DE112013007882B4 (de) 2012-04-20 2025-10-02 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung
WO2014008395A1 (en) 2012-07-03 2014-01-09 University Of Vermont And State Agricultural College Methods for forming one or more crystalline layers on a substrate
KR20140043551A (ko) * 2012-09-24 2014-04-10 삼성디스플레이 주식회사 유기발광소자, 이를 포함하는 유기발광 표시패널 및 유기발광 표시패널의 제조방법
CN105981476B (zh) * 2014-02-18 2018-01-12 夏普株式会社 有机电致发光元件和有机电致发光面板
US9166188B1 (en) * 2014-06-10 2015-10-20 Arolltech Co., Ltd. Organic light emitting diode device
US9490453B2 (en) * 2014-10-06 2016-11-08 Winbond Electronics Corp. Quasi-crystal organic light-emitting display panel and method for simulating optical efficiency of the same
FR3027155B1 (fr) 2014-10-08 2018-01-12 Ecole Polytechnique Procede de fabrication d'un dispositif electronique, en particulier a base de nanotubes de carbone
WO2017044577A1 (en) 2015-09-08 2017-03-16 Massachusetts Institute Of Technology Systems and methods for graphene based layer transfer
US10903073B2 (en) 2016-11-08 2021-01-26 Massachusetts Institute Of Technology Systems and methods of dislocation filtering for layer transfer
CN106854775B (zh) * 2016-11-11 2019-06-18 苏州大学 利用水-空气-有机溶剂三相界面制备有机半导体小分子单晶薄膜的方法
JP2020515052A (ja) 2017-02-24 2020-05-21 マサチューセッツ インスティテュート オブ テクノロジー 湾曲焦点面アレイのための装置および方法
WO2018195152A1 (en) * 2017-04-18 2018-10-25 Massachusetts Institute Of Technology Systems and methods for fabricating semiconductor devices via remote epitaxy
WO2019068144A1 (en) * 2017-10-04 2019-04-11 Queensland University Of Technology TUNABLE SPECTRUM ENDOSCOPE COMPONENT
US10718726B2 (en) * 2017-10-13 2020-07-21 Infineon Technologies Austria Ag Method for determining the concentration of an element of a heteroepitaxial layer
CN108461640B (zh) * 2018-03-16 2020-01-31 中国科学院长春应用化学研究所 晶态有机电致发光二极管及其应用
CN108538905B (zh) * 2018-05-31 2021-03-16 武汉华星光电半导体显示技术有限公司 Oled发光器件及oled显示装置
JP2021527618A (ja) 2018-06-22 2021-10-14 マサチューセッツ インスティテュート オブ テクノロジー グラフェンおよび／または六方晶窒化ホウ素を備えている層の上での炭化ケイ素の成長のためのシステムおよび方法ならびに関連物品
JP7260885B2 (ja) * 2019-12-05 2023-04-19 浙江大学 有機単結晶ヘテロ接合複合膜、その作製方法及び用途
CN114497407A (zh) * 2021-12-31 2022-05-13 云谷（固安）科技有限公司 发光器件、发光器件的制备方法及显示装置
US20240117521A1 (en) * 2022-10-03 2024-04-11 The Trustees Of Princeton University Method and system for growing a lattice matched, multilayer, organic crystal heterostructure

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100918988B1 (ko) 2001-08-29 2009-09-25 더 트러스티즈 오브 프린스턴 유니버시티 금속착물을 포함하는 호울수송층을 포함한 발광장치 및 이의 제작 방법 및 호울수송 촉진 방법
US6806491B2 (en) * 2002-04-03 2004-10-19 Tsinghua University Organic light-emitting devices
EP1611484B1 (de) 2003-03-19 2021-11-10 Heliatek GmbH Photoaktives bauelement mit organischen schichten
US7291223B2 (en) 2003-09-24 2007-11-06 Nitto Denko Corporation Epitaxial organic layered structure and method for making
CN1846461A (zh) * 2003-09-24 2006-10-11 日东电工株式会社 取向生长的有机分层结构及其制作方法
US7655961B2 (en) * 2003-10-02 2010-02-02 Maxdem Incorporated Organic diodes and materials
JP2005303027A (ja) * 2004-04-13 2005-10-27 Nissan Motor Co Ltd 半導体装置
US7776456B2 (en) 2004-12-03 2010-08-17 Universal Display Corporation Organic light emitting devices with an emissive region having emissive and non-emissive layers and method of making
US20060269782A1 (en) * 2005-05-25 2006-11-30 Eastman Kodak Company OLED electron-transporting layer
WO2007108385A1 (ja) * 2006-03-20 2007-09-27 Matsushita Electric Works, Ltd. 有機薄膜太陽電池
JPWO2007119703A1 (ja) 2006-04-14 2009-08-27 コニカミノルタホールディングス株式会社 結晶性有機半導体薄膜の製造方法、有機半導体薄膜、電子デバイスおよび薄膜トランジスタ
CN100555702C (zh) * 2006-04-29 2009-10-28 中国科学院长春应用化学研究所 有机半导体晶体薄膜及弱取向外延生长制备方法和应用
US11031567B2 (en) * 2006-07-11 2021-06-08 The Regents Of The University Of Michigan Efficient solar cells using all-organic nanocrystalline networks
EP2181466B1 (en) 2007-08-24 2021-03-10 The Regents of the University of Michigan Growth of ordered crystalline organic films
WO2010110164A1 (ja) * 2009-03-26 2010-09-30 コニカミノルタホールディングス株式会社 有機光電変換素子、それを用いた太陽電池及び光センサアレイ
JP5612084B2 (ja) 2009-06-03 2014-10-22 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン 長距離秩序を有する有機膜を有した有機電子デバイスの構造テンプレーティング

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TW201220571A (en) 2012-05-16
JP5840216B2 (ja) 2016-01-06
US20150179968A1 (en) 2015-06-25
CN103384926A (zh) 2013-11-06
US20120091436A1 (en) 2012-04-19
US9306184B2 (en) 2016-04-05
EP2628199A4 (en) 2014-10-22
JP2014500395A (ja) 2014-01-09
AU2011313917A1 (en) 2013-04-11
WO2012051101A2 (en) 2012-04-19
KR20130108579A (ko) 2013-10-04
AU2011313917B2 (en) 2015-06-11
US8933436B2 (en) 2015-01-13
EP2628199A2 (en) 2013-08-21
CA2812415A1 (en) 2012-04-19
WO2012051101A3 (en) 2012-05-31
EP2628199B1 (en) 2015-09-02

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