CN103378589B - Electrostatic discharge protection device - Google Patents
Electrostatic discharge protection device Download PDFInfo
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- CN103378589B CN103378589B CN201210229781.2A CN201210229781A CN103378589B CN 103378589 B CN103378589 B CN 103378589B CN 201210229781 A CN201210229781 A CN 201210229781A CN 103378589 B CN103378589 B CN 103378589B
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- 230000004224 protection Effects 0.000 title claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 230000003068 static effect Effects 0.000 claims description 53
- 230000008878 coupling Effects 0.000 claims description 30
- 238000010168 coupling process Methods 0.000 claims description 30
- 238000005859 coupling reaction Methods 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000005669 field effect Effects 0.000 claims description 17
- 230000008859 change Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 230000007246 mechanism Effects 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract 1
- 238000012423 maintenance Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000018199 S phase Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009979 protective mechanism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
An electrostatic discharge protection device comprises a silicon controlled rectifier equivalent circuit, a switch and a control circuit. The silicon controlled rectifier equivalent circuit comprises a first equivalent transistor and a second equivalent transistor. When the switch is turned on, the ESD current corresponding to the positive ESD charge is discharged from the pad through the switch, the first equivalent transistor and the second equivalent transistor. The control circuit is used for generating a control voltage according to the electrostatic discharge current to control the switch to be closed, wherein when the switch is closed, the electrostatic discharge current corresponding to the positive electrostatic discharge charge is discharged from the welding pad through the second equivalent transistor. According to the electrostatic discharge protection device provided by the embodiment of the invention, the latch-up effect can be avoided when the electrostatic discharge protection mechanism is started.
Description
Technical field
This disclosure relates to a kind of electronic installation, and in particular to a kind of electrostatic discharge protective device。
Background technology
Generally speaking, various electronic installations all can be provided with static discharge (ElectrostaticDischarge, ESD) mechanism protected, use and avoid when human body removes touching electronic installation with too much electrostatic, electronic installation causes damaging because of instantaneous large-current produced by electrostatic, or avoid electronic installation to be subject to environment or electrostatic influence that running tool is with and produce cannot the situation of normal operation。
In electro-static discharging device; thyristor (SiliconControlledRectifier generally can be set; SCR) device of electrostatic discharge (ESD) protection it is used as; and utilize it after suddenly returning collapse, to have relatively low maintenance voltage (HoldingVoltage); protection IC avoids the infringement of static discharge; again because thyristor has preferably electrostatic discharge capacity, and the area shared by IC is less, and therefore it has been widely used in general electro-static discharging device。
But, maintain brownout and less than the normal operating voltage of IC when, if device under normal operating conditions by external noise interference, then will result in breech lock (LatchUp) effect, and then causes IC misoperation or damage。
Summary of the invention
The embodiment of the present invention provides a kind of ESD protection circuit, thereby carries out electrostatic discharge protective。
One of this disclosure technology pattern is that it comprises silicon control rectifier equivalent circuit, switch and control circuit about a kind of electrostatic discharge protection component。Silicon control rectifier equivalent circuit comprises the first equivalent transistor and the second equivalent transistor。Switch is electrically coupled between silicon control rectifier equivalent circuit and weld pad, and wherein when the switch is closed, the static discharge current corresponding to positive static discharge electric charge discharges via switch, the first equivalent transistor and the second equivalent transistor from weld pad。Control circuit is closed to control switch in order to produce control voltage according to the static discharge current flowing through switch, the first equivalent transistor and the second equivalent transistor, wherein when the switch is closed, the static discharge current corresponding to positive static discharge electric charge discharges via the second equivalent transistor from weld pad。
Another technology pattern of this disclosure is that it comprises silicon control rectifier equivalent circuit, switch and control circuit about a kind of semiconductor device。Silicon control rectifier equivalent circuit comprises equivalence positive-negative-positive bipolar junction transistors and equivalent N PN type bipolar junction transistors。First end electric property coupling weld pad of switch and the base stage of equivalence positive-negative-positive bipolar junction transistors, the emitter-base bandgap grading of the second end electric property coupling equivalence positive-negative-positive bipolar junction transistors of switch。The emitter-base bandgap grading of the first end electric property coupling equivalent N PN transistor npn npn of control circuit and the control end of switch, the second end electric property coupling low level voltage of control circuit。
The generation of latch-up when technology contents according to this announcement, application of aforementioned electrostatic discharge protective or semiconductor device can avoid electrostatic discharge protective mechanism to start。
Present invention aims to provide the simplification summary of this disclosure, so that this disclosure is possessed basic understanding by reader。This summary of the invention is not the complete overview of this disclosure, and it is not intended to pointing out important (or crucial) device of the embodiment of the present invention or defining the scope of the present invention。
Accompanying drawing explanation
Fig. 1 is the schematic diagram illustrating a kind of electrostatic discharge protection component according to first embodiment of the invention；
Fig. 2 is the schematic diagram illustrating a kind of electrostatic discharge protection component according to second embodiment of the invention；
Fig. 3 is the electrostatic discharge protection component and the general thyristor result schematic diagram after transient state trigger latch effect (TransientLatch-up, TLU) is tested that illustrate this disclosure。
Drawing reference numeral:
| 100,200: electrostatic discharge protection component | 105: weld pad |
| 110: silicon control rectifier equivalent circuit | 112: the first equivalent transistors |
| 114: the second equivalent transistors | 120: switch |
| 130,230: control circuit | 142,146:n type heavily doped semiconductor layer |
| 144,148:p type heavily doped semiconductor layer |
Detailed description of the invention
It is hereafter coordinate institute's accompanying drawings to elaborate for embodiment, but the embodiment provided also is not used to the scope that the restriction present invention contains, and the description of structure operation is not used to limit the order of its execution, any structure reconfigured by device, produced the device with impartial effect, be all the scope that the present invention contains。Additionally, graphic only for the purpose of description, and not according to life size map。
About " about " used herein, " about " or " substantially " be commonly the error of exponential quantity or scope within 20 percent, be then more preferably preferably within 10 within 5 percent。Wen Zhongruo is without clearly stating, and its mentioned numerical value all regards as approximation, namely such as the error represented by " about ", " about " or " substantially " or scope。
It addition, about " coupling " used herein or " connection ", all can refer to that entity or in electrical contact directly made mutually by two or more device, or mutually indirectly put into effect body or in electrical contact, and " coupling " also can refer to two or more device mutual operation or action。
Fig. 1 is the schematic diagram illustrating a kind of semiconductor device such as electrostatic discharge protection component according to first embodiment of the invention。As it is shown in figure 1, electrostatic discharge protection component 100 comprises silicon control rectifier equivalent circuit 110, switch 120 and control circuit 130, wherein thyristor is a kind of electronic device with P/N/P/N quasiconductor interface。Silicon control rectifier equivalent circuit 110 comprises the first equivalent transistor 112 and the second equivalent transistor 114。Switch 120 is electrically coupled between silicon control rectifier equivalent circuit 110 and weld pad (pad) 105。Control circuit 130 then electric property coupling silicon control rectifier equivalent circuit 110 and switch 120, and control switch 120 on and off according to the Electrostatic Discharge electric current flowing through silicon control rectifier equivalent circuit 110 or wherein part equivalent circuit from weld pad 105。
In operation, when switching 120 conducting, when static discharge situation occurs (such as during positive static discharge charge accumulation) to produce moment static discharge current, static discharge current (such as positive static discharge current) corresponding to static discharge electric charge from weld pad 105 via switch the 120, first equivalent transistor 112 and the second equivalent transistor 114, flow through control circuit 130 toward low level voltage VSS or ground voltage GND, thereby discharge；That is, static discharge current is to discharge via silicon control rectifier equivalent circuit 110 from weld pad 105。Now, control circuit 130 produces a control voltage VA according to the static discharge current flowing through switch the 120, first equivalent transistor 112 and the second equivalent transistor 114, uses control switch 120 closedown。
Then, when switching 120 closedown, if it is follow-up when still having static discharge situation to occur and produce moment static discharge current (such as positive static discharge current) corresponding to static discharge electric charge, then static discharge current is from weld pad 105 via the second equivalent transistor 114, flows through control circuit 130 and discharges toward low level voltage VSS or ground voltage GND。Specifically, static discharge current is not passed through switch 120 and the first equivalent transistor 112, but directly discharge via the second equivalent transistor 114 from weld pad 105, now static discharge current just discharges not via overall silicon control rectifier equivalent circuit 110, but the second equivalent transistor 114 only transmitted in silicon control rectifier equivalent circuit 110 discharges。
Secondly, when the static discharge current via the second equivalent transistor 114 traffic organising circuit 130 changes, and when control voltage VA is changed according to this to certain voltage, switch 120 then switches back to conducting state according to control voltage VA from closed mode again。For example, as shown in Figure 1, switch 120 can comprise P-type mos field-effect transistor (MOSFET) MS, when static discharge current changes, make to control voltage VA when being brought down below the critical voltage of P-type mos field effect transistor M S, then P-type mos field effect transistor M S-phase self closing replying state accordingly is to conducting state。
Owing to providing in the process of silicon control rectifier equivalent circuit 110 release electrostatic discharge current at electrostatic discharge protection component 100, control circuit 130 can control switch 120 closedown according to static discharge current, make the operation providing silicon control rectifier equivalent circuit 110 to be performed continuously over static discharge, transfer to after a predetermined time by single equivalent transistor therein carry out discharging (that is, close the pattern of original thyristor electric discharge), therefore the maintenance voltage (HoldingVoltage) that silicon control rectifier equivalent circuit 110 has after suddenly returning collapse can be made to be unlikely to be down to too low level, relatively improve the level maintaining voltage。Thus, after electrostatic discharge protection component 100 release electrostatic discharge current, maintain voltage just will not too low and normal operating voltage less than IC, breech lock (LatchUp) effect that device is likely to result in when being disturbed by external noise under normal operating conditions can be avoided further。
In the present embodiment, the first equivalent transistor 112 can be equivalence positive-negative-positive bipolar junction transistors (BJT) M1, and the second equivalent transistor 114 can be equivalent N PN type bipolar junction transistors (BJT) M2。Base stage (such as: n-type heavily doped semiconductor layer 142 can as the base stage of transistor M1) the electric property coupling weld pad 105 of equivalence positive-negative-positive bipolar junction transistors M1 and the first end of switch 120, the second end of emitter-base bandgap grading (such as: p-type heavily doped semiconductor layer 144 can as the emitter-base bandgap grading of transistor M1) the electric property coupling switch of equivalence positive-negative-positive bipolar junction transistors M1。
Secondly, the emitter-base bandgap grading (such as: n-type heavily doped semiconductor layer 146 can as the emitter-base bandgap grading of transistor M2) of equivalent N PN transistor npn npn M2 and the first end of base stage (such as: p-type heavily doped semiconductor layer 148 can as the base stage of transistor M2) electric property coupling control circuit 130。Furthermore, the control end of the first end electric property coupling switch 120 of control circuit 130, and the second end electric property coupling low level voltage VSS or ground voltage GND of control circuit 130。
In operation, first end of control circuit 130 can according to flow through switch 120, the equivalence static discharge current of positive-negative-positive bipolar junction transistors M1 and equivalent N PN type bipolar junction transistors M2 and produce to control voltage VA, and switch 120 cuts out according to controlling voltage VA。Then, when the static discharge current via equivalent N PN type bipolar junction transistors M2 traffic organising circuit 130 changes, and when control voltage VA is changed according to this to certain voltage, switch 120 is according to control voltage VA self closing replying states to conducting state。
In an alternative embodiment of the invention, as negative static discharge electric charge (negativeESDcharge) of weld pad 105 accumulation, negative static discharge electric charge can pass through the NW at n-type heavily doped semiconductor layer 142, n-type heavily doped semiconductor layer 142 place, and p-type heavily doped semiconductor layer 148 discharges。
In implementation, silicon control rectifier equivalent circuit 110 can be low-voltage trigger-type thyristor (LVTSCR), modified form transverse direction thyristor (MLSCR), parasitic silicon controlled rectifier (embeddedSCR)。Switch 120 can comprise at least one in mos field effect transistor (MOSFET), bipolar junction transistors (BJT) and rheostat；In other words, in this disclosure, switch 120 can be realized by mos field effect transistor (can be P type or N-type), bipolar junction transistors (can be P type or N-type), rheostat or other devices that can realize switching function, and it is not to be limited described in this disclosure。
Fig. 2 is the schematic diagram illustrating a kind of electrostatic discharge protection component according to second embodiment of the invention。As shown in Figure 2, electrostatic discharge protection component 200 comprises silicon control rectifier equivalent circuit 110, switch 120 and control circuit 230, wherein silicon control rectifier equivalent circuit 110, switch 120 embodiments relevant to the similar Fig. 1 of the connection of control circuit 230 and operative relationship, therefore repeat no more in this。
Secondly, compared to the embodiment shown in Fig. 1, the control circuit 230 in the present embodiment more comprises equivalent resistor R1, and switch 120 comprise transistor (as: P-type mos field effect transistor M S)。First end controlling end electric property coupling equivalent resistor R1 of transistor MS, the first end electric property coupling weld pad 105 of transistor MS, the anode (such as: p-type heavily doped semiconductor layer 144 can as the anode of the emitter-base bandgap grading of transistor M1 and silicon control rectifier equivalent circuit 110) of the second end electric property coupling silicon control rectifier equivalent circuit 110 of transistor。In addition, the base stage (such as: p-type heavily doped semiconductor layer 148 can as the base stage of transistor M2) of first end of equivalent resistor R1 more electric property coupling equivalent N PN transistor npn npn M2 and emitter-base bandgap grading (such as: n-type heavily doped semiconductor layer 146 can as the emitter-base bandgap grading of transistor M2), and the second end electric property coupling low level voltage VSS or ground voltage GND of equivalent resistor R1。
In operation, when P-type mos field effect transistor M S turns on, when static discharge situation occurs and produces moment static discharge current (static discharge current corresponding to such as positive static discharge electric charge), static discharge current via P-type mos field effect transistor M S, equivalence positive-negative-positive bipolar junction transistors M1 and equivalent N PN type bipolar junction transistors M2 from weld pad 105, flows through equivalent resistor R1 and discharges toward low level voltage VSS or ground voltage GND。Now, one end of equivalent resistor R1 is according to the static discharge current generation control voltage VA flowing through P-type mos field effect transistor M S, equivalence positive-negative-positive bipolar junction transistors M1 and equivalent N PN type bipolar junction transistors M2, when controlling the voltage VA critical voltage being gradually increased to P-type mos field effect transistor M S, P-type mos field effect transistor M S closes。
Then, when P-type mos field effect transistor M S closes, the current potential of the current potential of n-type heavily doped semiconductor layer 142 and p-type heavily doped semiconductor layer 144 differs, the words of moment static discharge current are produced if now there being static discharge situation to occur, then static discharge current is from weld pad 105 via equivalent N PN type bipolar junction transistors M2, flows through equivalent resistor R1 and discharges toward low level voltage VSS or ground voltage GND。Such as, static discharge current is not passed through P-type mos field effect transistor M S and equivalence positive-negative-positive bipolar junction transistors M1, but from weld pad 105 directly via n-type heavily doped semiconductor layer 142 and equivalent N PN type bipolar junction transistors M2, flow to low level voltage VSS or ground voltage GND, thereby discharge；In other words, now static discharge current just discharges not via overall silicon control rectifier equivalent circuit 110, but the NPN type bipolar junction transistors M2 only transmitted in silicon control rectifier equivalent circuit 110 discharges。
Furthermore, when the static discharge current flowing to equivalent resistor R1 via NPN type bipolar junction transistors M2 changes, and when making control voltage VA change according to this to certain voltage, P-type mos field effect transistor M S is again according to control voltage VA self closing replying state to conducting state。
Thus, just the maintenance voltage (HoldingVoltage) having after silicon control rectifier equivalent circuit 110 returns collapse suddenly can be improved, and after electrostatic discharge protection component 200 release electrostatic discharge current, maintain voltage just will not too low and normal operating voltage less than IC, breech lock (LatchUp) effect that device is likely to result in when being disturbed by external noise under normal operating conditions can be avoided further。
In implementation, aforementioned control circuit 230 can comprise equivalent resistor R1, also can comprise and have the transistor of identical function or circuit with equivalent resistor R1, and equivalent resistor R1 can also polysilicon resistance (polyresistor), diffusion resistance (diffusionresistor), well resistance (wellresistor) etc. or different types of transistor realizes；In other words, in this disclosure, control circuit 230 can be realized by all kinds of devices or circuit according to actual demand, and it is not to be limited described in this disclosure。
Lower list () be after tested after the Property comparison table of electrostatic discharge protection component in this disclosure and general thyristor or protective device。As shown in table (), under being close to identical electro-static discharge protective ability, making layout (layout) area of the electrostatic discharge protection component of this disclosure has only to 1422um2, hence it is evident that also less than the layout area of the protective device adopting NMOS or PMOS。Additionally, electrostatic discharge protection component in this disclosure to maintain voltage also bigger than the maintenance voltage of general thyristor, latch-up can be made to be not susceptible to。
Table (one)
Fig. 3 is the electrostatic discharge protection component and the general thyristor result schematic diagram after transient state trigger latch effect (TransientLatch-up, TLU) is tested that illustrate this disclosure。As it is shown on figure 3, the maintenance voltage of the electrostatic discharge protection component of this disclosure is about 6.7V, the maintenance voltage reviewing general thyristor then only has 2.1V。Therefore, in operation, compared to general thyristor or protective device, the electrostatic discharge protection component applying this disclosure can avoid the generation of latch-up really。
From embodiments of the invention described above, application of aforementioned electrostatic discharge protection component can switch the path of release electrostatic discharge current in the process of release electrostatic discharge current, the maintenance voltage that silicon control rectifier equivalent circuit 110 has after suddenly returning collapse is improved, thus, maintain voltage just will not too low and normal operating voltage less than IC, breech lock (LatchUp) effect that device is likely to result in when being disturbed by external noise under normal operating conditions can be avoided further。
Although the present invention is disclosed above with embodiment; so it is not limited to the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, therefore protection scope of the present invention is when being as the criterion depending on as defined in claim。
Claims (11)
1. an electrostatic discharge protection component, is characterized in that, comprises:
One silicon control rectifier equivalent circuit, comprises one first equivalent transistor and one second equivalent transistor；
One switch, it is electrically coupled between described silicon control rectifier equivalent circuit and a weld pad, wherein when described switch conduction, the static discharge current corresponding to positive static discharge electric charge discharges via described switch, the first described equivalent transistor and the second described equivalent transistor from described weld pad；And
One control circuit, static discharge current flows through described switch, the first described equivalent transistor, the second described equivalent transistor and described control circuit and discharges, described control circuit is closed to control described switch in order to produce a control voltage according to described static discharge current, wherein when described switch cuts out, the static discharge current corresponding to positive static discharge electric charge discharges via the second described equivalent transistor and described control circuit from described weld pad。
2. electrostatic discharge protection component as claimed in claim 1, it is characterized in that, when the static discharge current flowing through the second described equivalent transistor changes and when making described control voltage change according to this to certain voltage, described switch self closing replying state is to conducting state。
3. electrostatic discharge protection component as claimed in claim 1, is characterized in that, described control circuit comprises an equivalent resistor, and static discharge current flows through described equivalent resistor and makes one end of described equivalent resistor produce described control voltage。
4. electrostatic discharge protection component as claimed in claim 1, it is characterized in that, described switch comprises a transistor MS, described control circuit comprises an equivalent resistor, the one of described transistor MS controls one first end of the equivalent resistor described in end electric property coupling, the weld pad described in one first end electric property coupling of described transistor MS, one anode of the silicon control rectifier equivalent circuit described in one second end electric property coupling of described transistor MS, one second end electric property coupling one low level voltage or a ground voltage of described equivalent resistor。
5. electrostatic discharge protection component as claimed in claim 4, it is characterized in that, the first described equivalent transistor is an equivalence PNP transistor, the second described equivalent transistor is an equivalence NPN transistor, the weld pad described in one base stage electric property coupling of described equivalent PNP transistor, described second end of transistor MS described in one emitter-base bandgap grading electric property coupling of described equivalent PNP transistor, the colelctor electrode of described equivalent PNP transistor is connected to the base stage of described equivalent N PN transistor npn npn；The colelctor electrode of described equivalent N PN transistor npn npn is connected to the base stage of described equivalent PNP transistor, described first end of the equivalent resistor described in a base stage of described equivalent N PN transistor npn npn and an emitter-base bandgap grading electric property coupling。
6. electrostatic discharge protection component as claimed in claim 1, is characterized in that, described switch comprises at least one in a mos field effect transistor, a bipolar junction transistors and a rheostat。
7. a semiconductor device, is characterized in that, comprises:
One silicon control rectifier equivalent circuit, comprises an equivalence positive-negative-positive bipolar junction transistors and an equivalence NPN type bipolar junction transistors；
One switch, one first end electric property coupling one weld pad of described switch and a base stage of described equivalent positive-negative-positive bipolar junction transistors, one emitter-base bandgap grading of the equivalent positive-negative-positive bipolar junction transistors described in one second end electric property coupling of described switch, the colelctor electrode of described equivalent positive-negative-positive bipolar junction transistors is connected to the base stage of described equivalent N PN type bipolar junction transistors, and the colelctor electrode of described equivalent N PN type bipolar junction transistors is connected to the base stage of described equivalent positive-negative-positive bipolar junction transistors；And
One control circuit, an emitter-base bandgap grading of the equivalent N PN type bipolar junction transistors described in one first end electric property coupling of described control circuit and the one of described switch controls end, one second end electric property coupling one low level voltage of described control circuit；
Static discharge current flows through described switch, described equivalent positive-negative-positive bipolar junction transistors, described equivalent N PN type bipolar junction transistors and described control circuit and discharges；Or
Static discharge current flows through described equivalent N PN type bipolar junction transistors and described control circuit is discharged。
8. semiconductor device as claimed in claim 7, it is characterized in that, described switch comprises a transistor, described control circuit comprises an equivalent resistor, the one of the transistor described in one first end electric property coupling of described equivalent resistor controls described base stage and described emitter-base bandgap grading, the low level voltage described in one second end electric property coupling of described equivalent resistor of end and described equivalent N PN type bipolar junction transistors。
9. semiconductor device as claimed in claim 8, is characterized in that, described transistor is a mos field effect transistor or a bipolar junction transistors。
10. semiconductor device as claimed in claim 7, is characterized in that, described switch comprises at least one in a mos field effect transistor, a bipolar junction transistors and a rheostat。
11. semiconductor device as claimed in claim 7, it is characterized in that, described first end of described control circuit produces a control voltage according to the static discharge current flowing through described switch, described equivalence positive-negative-positive bipolar junction transistors and described equivalent N PN type bipolar junction transistors, and described switch cuts out according to described control voltage。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101112824 | 2012-04-11 | ||
| TW101112824A TWI435433B (en) | 2012-04-11 | 2012-04-11 | Esd protection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103378589A CN103378589A (en) | 2013-10-30 |
| CN103378589B true CN103378589B (en) | 2016-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210229781.2A Expired - Fee Related CN103378589B (en) | 2012-04-11 | 2012-07-04 | Electrostatic discharge protection device |
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| Country | Link |
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| CN (1) | CN103378589B (en) |
| TW (1) | TWI435433B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI221668B (en) * | 2003-10-16 | 2004-10-01 | King Billion Electronics Co Lt | Electrostatic discharge protection circuit |
| TWI231033B (en) * | 2004-06-04 | 2005-04-11 | Macronix Int Co Ltd | ESD protection circuit |
| CN1744310A (en) * | 2004-09-02 | 2006-03-08 | 旺宏电子股份有限公司 | Electrostatic discharge conduction device and mixed power integrated circuits using same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6838707B2 (en) * | 2002-05-06 | 2005-01-04 | Industrial Technology Research Institute | Bi-directional silicon controlled rectifier for electrostatic discharge protection |
-
2012
- 2012-04-11 TW TW101112824A patent/TWI435433B/en not_active IP Right Cessation
- 2012-07-04 CN CN201210229781.2A patent/CN103378589B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI221668B (en) * | 2003-10-16 | 2004-10-01 | King Billion Electronics Co Lt | Electrostatic discharge protection circuit |
| TWI231033B (en) * | 2004-06-04 | 2005-04-11 | Macronix Int Co Ltd | ESD protection circuit |
| CN1744310A (en) * | 2004-09-02 | 2006-03-08 | 旺宏电子股份有限公司 | Electrostatic discharge conduction device and mixed power integrated circuits using same |
Non-Patent Citations (1)
| Title |
|---|
| CMOS结构中的闩锁效应;陈欣等;《微电子技术》;20031231;第31卷(第6期);第19-21页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103378589A (en) | 2013-10-30 |
| TWI435433B (en) | 2014-04-21 |
| TW201342567A (en) | 2013-10-16 |
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