CN103378589A - Electrostatic discharge protection device - Google Patents
Electrostatic discharge protection device Download PDFInfo
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- CN103378589A CN103378589A CN2012102297812A CN201210229781A CN103378589A CN 103378589 A CN103378589 A CN 103378589A CN 2012102297812 A CN2012102297812 A CN 2012102297812A CN 201210229781 A CN201210229781 A CN 201210229781A CN 103378589 A CN103378589 A CN 103378589A
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- 230000004224 protection Effects 0.000 title claims abstract description 35
- 230000003068 static effect Effects 0.000 claims description 52
- 230000008878 coupling Effects 0.000 claims description 29
- 238000010168 coupling process Methods 0.000 claims description 29
- 238000005859 coupling reaction Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 24
- 230000005669 field effect Effects 0.000 claims description 17
- 230000000694 effects Effects 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract 1
- 238000007599 discharging Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 230000035508 accumulation Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009979 protective mechanism Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
An electrostatic discharge protection device comprises a silicon controlled rectifier equivalent circuit, a switch and a control circuit. The silicon controlled rectifier equivalent circuit comprises a first equivalent transistor and a second equivalent transistor. When the switch is turned on, the ESD current corresponding to the positive ESD charge is discharged from the pad through the switch, the first equivalent transistor and the second equivalent transistor. The control circuit is used for generating a control voltage according to the electrostatic discharge current to control the switch to be closed, wherein when the switch is closed, the electrostatic discharge current corresponding to the positive electrostatic discharge charge is discharged from the welding pad through the second equivalent transistor. According to the electrostatic discharge protection device provided by the embodiment of the invention, the latch-up effect can be avoided when the electrostatic discharge protection mechanism is started.
Description
Technical field
This disclosure relates to a kind of electronic installation, and particularly relevant for a kind of electrostatic discharge protective device.
Background technology
Generally speaking, all can be provided with static discharge (Electrostatic Discharge in the various electronic installations, ESD) mechanism of protection, use and avoid when human body goes to touch electronic installation with too much static, electronic installation causes because of the instantaneous large-current that produces of static damaging, or avoid electronic installation to be subject to environment or transport instrument with electrostatic influence and produce can't normal operation situation.
In electro-static discharging device; thyristor (Silicon Controlled Rectifier generally can be set; SCR) be used as the device of electrostatic discharge (ESD) protection; and utilize it suddenly to return to have the lower voltage (Holding Voltage) of keeping after the collapse; the protection integrated circuit avoids the infringement of static discharge; again because thyristor has better electrostatic discharge capacity, and shared area is less in integrated circuit, so it has been widely used in the general electro-static discharging device.
Yet, under the situation keeping brownout less than the normal operating voltage of integrated circuit, if device is disturbed by external noise under the normal running situation, will cause breech lock (Latch Up) effect, and then cause integrated circuit misoperation or damage.
Summary of the invention
The embodiment of the invention provides a kind of electrostatic storage deflection (ESD) protection circuit, carries out by this electrostatic discharge protective.
One of this disclosure technology sample attitude is about a kind of electrostatic discharge protection component, and it comprises thyristor equivalent electric circuit, switch and control circuit.The thyristor equivalent electric circuit comprises the first equivalent transistor and the second equivalent transistor.Switch is electrically coupled between thyristor equivalent electric circuit and the weld pad, and wherein when switch conduction, the positive corresponding static discharge current of static discharge electric charge discharges via switch, the first equivalent transistor and the second equivalent transistor from weld pad.Control circuit produces control voltage in order to the static discharge current according to flow through switch, the first equivalent transistor and the second equivalent transistor and cuts out with control switch, wherein when switch cut out, the positive corresponding static discharge current of static discharge electric charge discharged via the second equivalent transistor from weld pad.
Another technology sample attitude of this disclosure is about a kind of semiconductor device, and it comprises thyristor equivalent electric circuit, switch and control circuit.The thyristor equivalent electric circuit comprises equivalent positive-negative-positive two-carrier junction transistor and equivalent N PN type two-carrier junction transistor.The base stage of the first end electric property coupling weld pad of switch and equivalent positive-negative-positive two-carrier junction transistor, the emitter-base bandgap grading of the second end electric property coupling equivalence positive-negative-positive two-carrier junction transistor of switch.The emitter-base bandgap grading of the first end electric property coupling equivalent N PN transistor npn npn of control circuit and the control end of switch, the second end electric property coupling low level voltage of control circuit.
According to the technology contents of this announcement, the generation of latch-up when application of aforementioned electrostatic discharge protective or semiconductor device can avoid electrostatic discharge protective mechanism to start.
Content of the present invention aims to provide the simplification summary of this disclosure, so that the reader possesses basic understanding to this disclosure.This summary of the invention is not the complete overview of this disclosure, and its purpose is not at important (or crucial) device of pointing out the embodiment of the invention or defines scope of the present invention.
Description of drawings
Fig. 1 is the schematic diagram that illustrates a kind of electrostatic discharge protection component according to first embodiment of the invention;
Fig. 2 is the schematic diagram that illustrates a kind of electrostatic discharge protection component according to second embodiment of the invention;
Fig. 3 is electrostatic discharge protection component and the result schematic diagram of general thyristor after transient state triggers latch-up (Transient Latch-up, TLU) test that illustrates this disclosure.
Drawing reference numeral:
| 100,200: electrostatic discharge protection component | 105: weld pad |
| 110: the thyristor equivalent electric circuit | 112: the first equivalent transistors |
| 114: the second equivalent transistors | 120: switch |
| 130,230: control circuit | 142,146:n type heavily doped semiconductor layer |
| 144,148:p type heavily doped semiconductor layer |
Embodiment
Hereinafter be to cooperate appended graphic elaborating for embodiment, but the embodiment that provides limits the scope that the present invention is contained, and the description of structure running is non-in order to limit the order of its execution, any structure that is reconfigured by device, the device with impartial effect that produces is all the scope that the present invention is contained.In addition, graphic only for the purpose of description, do not map according to life size.
About " pact " used herein, " approximately " generally typically refer to " roughly " error of numerical value or scope in 20 percent, be preferably in ten Percent, more preferably then be in 5 percent.Wen Zhongruo is without offering some clarification on, and its mentioned numerical value is all regarded as approximation, namely such as " pact ", " approximately " or " roughly " represented error or scope.
In addition, about " coupling " used herein or " connection ", can refer to that all two or more device directly makes entity or electrical contact mutually, or mutually indirectly put into effect body or electrical contact, and " coupling " also can refer to two or more device mutual operation or action.
Fig. 1 illustrates for example schematic diagram of electrostatic discharge protection component of a kind of semiconductor device according to first embodiment of the invention.As shown in Figure 1, electrostatic discharge protection component 100 comprises thyristor equivalent electric circuit 110, switch 120 and control circuit 130, and wherein thyristor is a kind of electronic device with P/N/P/N semiconductor interface.Thyristor equivalent electric circuit 110 comprises the first equivalent transistor 112 and the second equivalent transistor 114.Switch 120 is electrically coupled between thyristor equivalent electric circuit 110 and the weld pad (pad) 105.130 electric property coupling thyristors of control circuit equivalent electric circuit 110 and switch 120, and according to from weld pad 105 flow through thyristor equivalent electric circuit 110 or wherein the Electrostatic Discharge electric current of part equivalent electric circuit come control switch 120 conductings or close.
In the operation, under the situation of switch 120 conductings, when the static discharge situation when positive static discharge charge accumulation (for example) occurs and produces moment during static discharge current, static discharge current (for example positive the corresponding static discharge current of static discharge electric charge) from weld pad 105 via switch 120, the first equivalent transistor 112 and the second equivalent transistor 114, flow through control circuit 130 toward low level voltage VSS or earthed voltage GND, discharge by this; That is static discharge current is to discharge via thyristor equivalent electric circuit 110 from weld pad 105.At this moment, control circuit 130 produces a control voltage VA according to the static discharge current of flow through switch 120, the first equivalent transistor 112 and the second equivalent transistor 114, uses control switch 120 and closes.
Then, under the situation that switch 120 cuts out, if follow-uply still have the static discharge situation to occur and when producing moment static discharge current (for example positive corresponding static discharge current of static discharge electric charge), then via the second equivalent transistor 114, the control circuit 130 of flowing through discharges toward low level voltage VSS or earthed voltage GND static discharge current from weld pad 105.Particularly, static discharge current do not flow through switch 120 and the first equivalent transistor 112, but directly discharge via the second equivalent transistor 114 from weld pad 105, this moment, static discharge current did not just discharge via bulk silicon control rectifier equivalent electric circuit 110, but the second equivalent transistor 114 that only sees through in the thyristor equivalent electric circuit 110 discharges.
Secondly, when the static discharge current that flows to control circuit 130 via the second equivalent transistor 114 changes, and so that control voltage VA when changing to certain voltage according to this, 120 on switch switches back to conducting state according to control voltage VA from closed condition again.For instance, as shown in Figure 1, switch 120 can comprise P-type mos field-effect transistor (MOSFET) MS, when static discharge current changes, so that control voltage VA is when being brought down below the critical voltage of P-type mos field effect transistor M S, then P-type mos field effect transistor M S accordingly the self closing replying state to conducting state.
Owing to provide in the process of thyristor equivalent electric circuit 110 release electrostatic discharging currents at electrostatic discharge protection component 100, control circuit 130 can come control switch 120 to cut out according to static discharge current, so that provide thyristor equivalent electric circuit 110 to continue to carry out the operation of static discharge, through transfer to after the certain hour by wherein single equivalent transistor discharge (that is, close the pattern of original thyristor discharge), therefore can make the thyristor equivalent electric circuit 110 rapid voltages (Holding Voltage) of keeping that have after the collapse that return be unlikely to be down to low accurate position, relatively improve the accurate position of keeping voltage.Thus, after electrostatic discharge protection component 100 release electrostatic discharging currents, keep voltage just can not cross low and less than the normal operating voltage of integrated circuit, breech lock (Latch Up) effect that may cause in the time of can further avoiding device disturbed by external noise.
In the present embodiment, the first equivalent transistor 112 can be equivalent positive-negative-positive two-carrier junction transistor (BJT) M1, and the second equivalent transistor 114 can be equivalent N PN type two-carrier junction transistor (BJT) M2.Base stage (for example: N-shaped heavily doped semiconductor layer 142 can be used as the base stage of transistor M1) the electric property coupling weld pad 105 of equivalence positive-negative-positive two-carrier junction transistor M1 and the first end of switch 120, the second end of the emitter-base bandgap grading of equivalent positive-negative-positive two-carrier junction transistor M1 (for example: p-type heavily doped semiconductor layer 144 can be used as the emitter-base bandgap grading of transistor M1) electric property coupling switch.
Secondly, the first end of the emitter-base bandgap grading of equivalent N PN transistor npn npn M2 (for example: N-shaped heavily doped semiconductor layer 146 can be used as the emitter-base bandgap grading of transistor M2) and base stage (for example: p-type heavily doped semiconductor layer 148 can be used as the base stage of transistor M2) electric property coupling control circuit 130.Moreover, the control end of the first end electric property coupling switch 120 of control circuit 130, and the second end electric property coupling low level voltage VSS or earthed voltage GND of control circuit 130.
In the operation, the first end of control circuit 130 can produce according to the static discharge current of the switch 120 of flowing through, equivalent positive-negative-positive two-carrier junction transistor M1 and equivalent N PN type two-carrier junction transistor M2 control voltage VA, and switch 120 cuts out according to control voltage VA.Then, when the static discharge current that flows to control circuit 130 via equivalent N PN type two-carrier junction transistor M2 changes, and so that control voltage VA when changing to certain voltage according to this, switch 120 according to control voltage VA self closing replying states to conducting state.
In another embodiment of the present invention, when the negative static discharge electric charge (negative ESD charge) of weld pad 105 accumulations, negative static discharge electric charge can pass through the NW at N-shaped heavily doped semiconductor layer 142, N-shaped heavily doped semiconductor layer 142 places, and p-type heavily doped semiconductor layer 148 discharges.
On the implementation, thyristor equivalent electric circuit 110 can be low-voltage trigger-type thyristor (LVTSCR), the horizontal thyristor of modified form (MLSCR), parasitic silicon controlled rectifier (embedded SCR).Switch 120 can comprise in mos field effect transistor (MOSFET), two-carrier junction transistor (BJT) and the variable resistance at least one; In other words, in this disclosure, switch 120 can realize that it is not limited so that this disclosure is described by mos field effect transistor (can be P type or N-type), two-carrier junction transistor (can be P type or N-type), variable resistance or other devices that can realize switching function.
Fig. 2 is the schematic diagram that illustrates a kind of electrostatic discharge protection component according to second embodiment of the invention.As shown in Figure 2, electrostatic discharge protection component 200 comprises thyristor equivalent electric circuit 110, switch 120 and control circuit 230, wherein thyristor equivalent electric circuit 110, embodiment that switch 120 is relevant with the similar Fig. 1 of operative relationship with the connection of control circuit 230 are so repeat no more in this.
Secondly, compared to embodiment shown in Figure 1, the control circuit 230 in the present embodiment more comprises equivalent resistor R1, and switch 120 comprises transistor (as: P-type mos field effect transistor M S).The first end of the control end electric property coupling equivalent resistor R1 of transistor MS, the first end electric property coupling weld pad 105 of transistor MS, the anode of transistorized the second end electric property coupling thyristor equivalent electric circuit 110 (for example: p-type heavily doped semiconductor layer 144 can be used as the emitter-base bandgap grading of transistor M1 and the anode of thyristor equivalent electric circuit 110).In addition, the first end of equivalent resistor R1 is the base stage of electric property coupling equivalent N PN transistor npn npn M2 (for example: p-type heavily doped semiconductor layer 148 can be used as the base stage of transistor M2) and emitter-base bandgap grading (for example: N-shaped heavily doped semiconductor layer 146 can be used as the emitter-base bandgap grading of transistor M2) more, and the second end electric property coupling low level voltage VSS or earthed voltage GND of equivalent resistor R1.
In the operation, under the situation of P-type mos field effect transistor M S conducting, when producing moment static discharge current (for example positive corresponding static discharge current of static discharge electric charge) when the generation of static discharge situation, via P-type mos field effect transistor M S, equivalent positive-negative-positive two-carrier junction transistor M1 and equivalent N PN type two-carrier junction transistor M2, the equivalent resistor of flowing through R1's static discharge current discharges toward low level voltage VSS or earthed voltage GND from weld pad 105.At this moment, the end of equivalent resistor R1 produces control voltage VA according to the static discharge current of flow through P-type mos field effect transistor M S, equivalent positive-negative-positive two-carrier junction transistor M1 and equivalent N PN type two-carrier junction transistor M2, when control voltage VA increased to the critical voltage of P-type mos field effect transistor M S gradually, P-type mos field effect transistor M S closed.
Then, under the situation that P-type mos field effect transistor M S closes, the current potential of N-shaped heavily doped semiconductor layer 142 is not identical with the current potential of p-type heavily doped semiconductor layer 144, produce the words of moment static discharge current if there is this moment the static discharge situation to occur, then via equivalent N PN type two-carrier junction transistor M2, the equivalent resistor of flowing through R1's static discharge current discharges toward low level voltage VSS or earthed voltage GND from weld pad 105.For example, static discharge current do not flow through P-type mos field effect transistor M S and equivalent positive-negative-positive two-carrier junction transistor M1, but from weld pad 105 directly via N-shaped heavily doped semiconductor layer 142 and equivalent N PN type two-carrier junction transistor M2, flow to low level voltage VSS or earthed voltage GND, discharge by this; In other words, this moment, static discharge current did not just discharge via bulk silicon control rectifier equivalent electric circuit 110, but the NPN type two-carrier junction transistor M2 that only sees through in the thyristor equivalent electric circuit 110 discharges.
Moreover, when the static discharge current that flows to equivalent resistor R1 via NPN type two-carrier junction transistor M2 changes, and so that control voltage VA when changing to certain voltage according to this, P-type mos field effect transistor M S again according to control voltage VA self closing replying state to conducting state.
Thus, just can improve thyristor equivalent electric circuit 110 rapid return have after the collapse keep voltage (Holding Voltage), and after electrostatic discharge protection component 200 release electrostatic discharging currents, keep voltage just can not cross low and less than the normal operating voltage of integrated circuit, breech lock (Latch Up) effect that may cause in the time of can further avoiding device disturbed by external noise.
On the implementation, aforementioned control circuit 230 can comprise equivalent resistor R1, also can comprise transistor or circuit with equivalent resistor R1 tool identical function, and equivalent resistor R1 also can polysilicon resistance (poly resistor), diffusion resistance (diffusion resistor), well resistance (well resistor) etc. or dissimilar transistors realize; In other words, in this disclosure, control circuit 230 can be realized by all kinds of devices or circuit that according to actual demand it is not limited so that this disclosure is described.
Lower tabulation (one) be after tested after the characteristic comparison sheet of electrostatic discharge protection component and general thyristor or protective device in this disclosure.Shown in table (), be close under the identical electro-static discharge protective ability, making layout (layout) area of the electrostatic discharge protection component of this disclosure only needs 1422um2, and obviously the layout area than the protective device that adopts NMOS or PMOS is also little.In addition, the electrostatic discharge protection component in this disclosure keep voltage also than general thyristor to keep voltage larger, can make latch-up be difficult for occuring.
Table (one)
Fig. 3 is electrostatic discharge protection component and the result schematic diagram of general thyristor after transient state triggers latch-up (Transient Latch-up, TLU) test that illustrates this disclosure.As shown in Figure 3, the electrostatic discharge protection component of this disclosure keep the about 6.7V of voltage, the voltage of keeping of reviewing general thyristor then only has 2.1V.Therefore, in operation, compared to general thyristor or protective device, the electrostatic discharge protection component of using this disclosure can be avoided the generation of latch-up really.
By the embodiment of the invention described above as can be known, the application of aforementioned electrostatic discharge protection component can switch the path of release electrostatic discharging current in the process of release electrostatic discharging current, so that the thyristor equivalent electric circuit 110 rapid voltages of keeping that have after the collapse that return improve, thus, keep voltage just can not cross low and less than the normal operating voltage of integrated circuit, breech lock (Latch Up) effect that may cause in the time of can further avoiding device disturbed by external noise.
Although the present invention discloses as above with execution mode; so it is not to limit the present invention, and any this area tool is known the knowledgeable usually, without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (11)
1. an electrostatic discharge protection component is characterized in that, comprises:
One thyristor equivalent electric circuit comprises one first equivalent transistor and one second equivalent transistor;
One switch, be electrically coupled between described thyristor equivalent electric circuit and the weld pad, wherein when described switch conduction, the positive corresponding static discharge current of static discharge electric charge discharges via described switch, described the first equivalent transistor and described the second equivalent transistor from described weld pad; And
One control circuit, producing a control voltage in order to the static discharge current according to flow through described switch, described the first equivalent transistor and described the second equivalent transistor closes to control described switch, wherein when described switch cut out, the positive corresponding static discharge current of static discharge electric charge discharged via described the second equivalent transistor from described weld pad.
2. electrostatic discharge protection component as claimed in claim 1, it is characterized in that, when the static discharge current of described the second equivalent transistor of flowing through changes and so that described control voltage when changing to certain voltage according to this, described switch self closing replying state is to conducting state.
3. electrostatic discharge protection component as claimed in claim 1 is characterized in that, described control circuit comprises an equivalent resistor, and static discharge current is flowed through described equivalent resistor so that an end of described equivalent resistor produces described control voltage.
4. electrostatic discharge protection component as claimed in claim 1, it is characterized in that, described switch comprises a transistor, described control circuit comprises an equivalent resistor, one first end of the described equivalent resistor of a described transistorized control end electric property coupling, the described weld pad of a described transistorized first end electric property coupling, an anode of the described thyristor equivalent electric circuit of described transistorized one second end electric property coupling.
5. electrostatic discharge protection component as claimed in claim 4, it is characterized in that, described the first equivalent transistor is an equivalent PNP transistor, described the second equivalent transistor is an equivalent NPN transistor, the described weld pad of one base stage electric property coupling of described equivalent PNP transistor, described transistorized described the second end of one emitter-base bandgap grading electric property coupling of described equivalent PNP transistor, the described first end of a base stage of described equivalent N PN transistor npn npn and the described equivalent resistor of an emitter-base bandgap grading electric property coupling.
6. electrostatic discharge protection component as claimed in claim 1 is characterized in that, described switch comprises in a mos field effect transistor, a two-carrier junction transistor and the variable resistance at least one.
7. a semiconductor device is characterized in that, comprises:
One thyristor equivalent electric circuit comprises an equivalent positive-negative-positive two-carrier junction transistor and an equivalent NPN type two-carrier junction transistor;
One switch, a first end electric property coupling one weld pad of described switch and a base stage of described equivalent positive-negative-positive two-carrier junction transistor, an emitter-base bandgap grading of the described equivalent positive-negative-positive two-carrier junction transistor of one second end electric property coupling of described switch; And
One control circuit, an emitter-base bandgap grading of the described equivalent N PN of the first end electric property coupling transistor npn npn of described control circuit and a control end of described switch, one second end electric property coupling, the one low level voltage of described control circuit.
8. semiconductor device as claimed in claim 7, it is characterized in that, described switch comprises a transistor, described control circuit comprises an equivalent resistor, described base stage and the described emitter-base bandgap grading of the described transistorized control end of one first end electric property coupling of described equivalent resistor and described equivalent N PN transistor npn npn, the described low level voltage of one second end electric property coupling of described equivalent resistor.
9. semiconductor device as claimed in claim 8 is characterized in that, described transistor is a mos field effect transistor or a two-carrier junction transistor.
10. semiconductor device as claimed in claim 7 is characterized in that, described switch comprises in a mos field effect transistor, a two-carrier junction transistor and the variable resistance at least one.
11. semiconductor device as claimed in claim 7, it is characterized in that, the described first end of described control circuit produces a control voltage according to the static discharge current of flow through described switch, described equivalent positive-negative-positive two-carrier junction transistor and described equivalent N PN type two-carrier junction transistor, described switch cuts out according to described control voltage.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101112824 | 2012-04-11 | ||
| TW101112824A TWI435433B (en) | 2012-04-11 | 2012-04-11 | Esd protection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103378589A true CN103378589A (en) | 2013-10-30 |
| CN103378589B CN103378589B (en) | 2016-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210229781.2A Expired - Fee Related CN103378589B (en) | 2012-04-11 | 2012-07-04 | Electrostatic discharge protection device |
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| Country | Link |
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| CN (1) | CN103378589B (en) |
| TW (1) | TWI435433B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040065923A1 (en) * | 2002-05-06 | 2004-04-08 | Industrial Technology Research Institute | Bi-directional silicon controlled rectifier for electrostatic discharge protection |
| TWI221668B (en) * | 2003-10-16 | 2004-10-01 | King Billion Electronics Co Lt | Electrostatic discharge protection circuit |
| TWI231033B (en) * | 2004-06-04 | 2005-04-11 | Macronix Int Co Ltd | ESD protection circuit |
| CN1744310A (en) * | 2004-09-02 | 2006-03-08 | 旺宏电子股份有限公司 | Electrostatic discharge conduction device and mixed power integrated circuits using same |
-
2012
- 2012-04-11 TW TW101112824A patent/TWI435433B/en not_active IP Right Cessation
- 2012-07-04 CN CN201210229781.2A patent/CN103378589B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040065923A1 (en) * | 2002-05-06 | 2004-04-08 | Industrial Technology Research Institute | Bi-directional silicon controlled rectifier for electrostatic discharge protection |
| TWI221668B (en) * | 2003-10-16 | 2004-10-01 | King Billion Electronics Co Lt | Electrostatic discharge protection circuit |
| TWI231033B (en) * | 2004-06-04 | 2005-04-11 | Macronix Int Co Ltd | ESD protection circuit |
| CN1744310A (en) * | 2004-09-02 | 2006-03-08 | 旺宏电子股份有限公司 | Electrostatic discharge conduction device and mixed power integrated circuits using same |
Non-Patent Citations (1)
| Title |
|---|
| 陈欣等: "CMOS结构中的闩锁效应", 《微电子技术》, vol. 31, no. 6, 31 December 2003 (2003-12-31) * |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI435433B (en) | 2014-04-21 |
| CN103378589B (en) | 2016-06-22 |
| TW201342567A (en) | 2013-10-16 |
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