CN103367620A - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- CN103367620A CN103367620A CN 201210087722 CN201210087722A CN103367620A CN 103367620 A CN103367620 A CN 103367620A CN 201210087722 CN201210087722 CN 201210087722 CN 201210087722 A CN201210087722 A CN 201210087722A CN 103367620 A CN103367620 A CN 103367620A
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Abstract
The invention provides a light emitting diode which comprises a substrate and two electrodes arranged on the substrate. The substrate is also provided with a heat conducting layer and comprises a top surface. The two electrodes and the heat conducting layer are arranged on the top surface. The heat conducting layer is attached to the top face of the substrate along the edges of the electrodes, and the two electrodes and the two electrodes and the heat conducting layer are mutually separated and insulated respectively. According to the light emitting diode, since the substrate is covered with the electrodes and the heat conducting layer at the same time, the heat generated in the working of the light emitting diode can be transmitted to the substrate and the outside at the same time through the electrodes and the heat conducting layer, and the heat dissipation performance is greatly improved. The invention also provides a manufacturing method of the light emitting diode.
Description
Technical field
The present invention relates to a kind of light-emitting diode and manufacture method thereof.
Background technology
Light-emitting diode has been widely used among the multiple occasion at present as a kind of emerging light source, and the trend that replaces conventional light source is arranged greatly.
The packaging body that existing light-emitting diode generally includes a pedestal, is located at two electrodes on the pedestal, a luminescence chip that is electrically connected with this two electrode and encapsulates described electrode and luminescence chip.This electrode is the sheet metal that is attached on this pedestal, because metal has better thermal conductivity, therefore, this electrode also has certain effect aspect the heat conduction of light-emitting diode and the heat radiation, but this electrode has certain shape usually, be not that pedestal is all covered, therefore, the radiating effect of the light-emitting diode of this structure is not satisfactory.
A kind of molding mode of this electrode is, sheet metal is coated on the pedestal first, then removes unwanted part by etching method, thereby forms the electrode of required form at pedestal.Yet the method need to be used a large amount of chemical reagent, is unfavorable for environmental protection.The another kind of molding mode of this electrode is, first sheet metal is formed the electrode of required form by the method for punching press, again electrode is coated on the pedestal, although this method has been avoided the use chemical reagent, but in punching course, form a large amount of rim charges, cause the significant wastage of resource, be unfavorable for equally environmental protection.
Summary of the invention
Therefore, be necessary to provide a kind of good heat dissipation effect and environmentally friendly light-emitting diode and manufacture method thereof.
A kind of light-emitting diode, comprise a substrate, be located at two electrodes on this substrate, also be provided with a heat-conducting layer on this substrate, this substrate comprises an end face, this two electrode and this heat-conducting layer all are located on this end face, this heat-conducting layer fits on the end face of this substrate along the edge of this electrode, and spacer insulator mutually between this two electrode and between this two electrode and this heat-conducting layer.
A kind of manufacture method of light-emitting diode comprises step:
(1) provide a substrate, this substrate is made by the material of insulation and hot pressing distortion, this substrate and have a smooth end face;
(2) coating one metal foil layer on the end face of this substrate;
(3) provide a diel, with this this metal foil layer of diel punching press and substrate, make this metal foil layer split into two electrodes and a heat-conducting layer, this heat-conducting layer fits on the end face of this substrate along the edge of this electrode, and spacer insulator mutually between this two electrode and between this two electrode and this heat-conducting layer.
A kind of light-emitting diode, this light-emitting diode are above-mentioned method for manufacturing light-emitting manufacturing.
In this light-emitting diode owing to be coated with simultaneously electrode and heat-conducting layer on the pedestal, therefore, the heat that produces during the work of this light-emitting diode, can be by electrode and heat-conducting layer simultaneously to pedestal and outsidely pass layer, thereby heat radiation performance greatly.In the above-mentioned method for manufacturing light-emitting, electrode adopts stamping forming mode to be directly molded on the pedestal, do not use chemical reagent, avoided the pollution to environment, and the rim charge direct heat that forms in the punching course is pressed on the pedestal of light-emitting diode as heat-conducting layer, not only avoid the waste of rim charge, but also be conducive to the heat radiation of light-emitting diode.
With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments.
Description of drawings
Fig. 1 is the structural representation of the light-emitting diode in the first embodiment of the invention.
Fig. 2 is the three-dimensional exploded view of the light-emitting diode among Fig. 1.
Fig. 3 is the manufacture method flow chart of light-emitting diode of the present invention.
Fig. 4 shows first and second step of manufacture method shown in Figure 3.
Fig. 5 to Fig. 6 shows the 3rd step of manufacture method shown in Figure 3.
Fig. 7 is the state diagram of finishing the 3rd step metacoxal plate and metal foil layer in the manufacture method of light-emitting diode of the present invention.
Fig. 8 is the upward view of mould in the manufacture method of the light-emitting diode in the second embodiment of the invention.
Fig. 9 is the punching press schematic diagram in the manufacture method of the light-emitting diode in the third embodiment of the invention.
The main element symbol description
| 100 | Light- |
|
| 10、 | Pedestal | |
| 11 | |
|
| 20、20b | Electrode | |
| 21 | Connecting portion | |
| 22 | |
|
| 30 | Heat-conducting layer | |
| 40 | Luminescence chip | |
| 50 | Packaging body | |
| 51 | Accepting |
|
| 60 | |
|
| 61 | |
|
| 70 | |
|
| 80、80a、 | Diel | |
| 81、 | Stamping surface | |
| 82、82a、82b、83a | Groove | |
| 821 | The first |
|
| 822 | The first |
|
| 823 | The |
|
| 831 | The second |
|
| 832 | The second |
|
| 833 | The second link slot |
Following embodiment further specifies the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Fig. 1 and Fig. 2 show the light-emitting diode 100 in the first embodiment of the invention, the luminescence chip 40 that this light-emitting diode 100 comprises a pedestal 10, be located at two electrodes 20 on this pedestal 10 and a heat-conducting layer 30, be electrically connected with described two electrodes 20, and the packaging body 50 of the described luminescence chip 40 of encapsulation.
This pedestal 10 is rectangular tabular, and this pedestal 10 is made by insulating material, such as plastics etc.The end face of this pedestal 10 is provided with two relative projections 11 of interval, and each projection 11 is E shape, and this two projection 11 is the Mirror Symmetry setting, and the top of this two projection 11 is used for being sticked this two electrode 20.Other parts on the end face of this pedestal 10 except this projection 11 are lower with respect to these two protruding 11 positions, are used for being sticked this heat-conducting layer 30.The top of each projection 11 is with respect to the height of the end face of this pedestal 10 twice greater than the thickness of this heat-conducting layer 30, thereby makes the electrode 20 and the space insulation on short transverse of this heat-conducting layer 30 at these projection 11 tops.
The shape of a corresponding projection 11 is identical on the shape of each electrode 20 and this pedestal 10, namely is E shape, thereby covers the top of this projection 11 fully.Each electrode 20 comprises three branch sections 22 that a junction 21 reaches from an epitaxial lateral overgrowth of this connecting portion 21 is stretched, the connecting portion 21 of this two electrode 20 is mutually close, so that be connected with two electric contacts of this luminescence chip 40, the branch section 22 of this two electrode 20 extends respectively in the opposite direction.This two electrode 20 is identical with the material of this heat-conducting layer 30, is tinsel, and such as Copper Foil, aluminium foil etc., it is hot all to have a metal guide.This heat-conducting layer 30 fits on the end face of this pedestal 10 along the edge of this projection 11 and electrode 20.
Two electric contacts of this luminescence chip 40 are electrically connected with the connecting portion 21 of this two electrode 20 respectively by the mode of welding.In other embodiment, two electrodes of this luminescence chip 40 also can be electrically connected with this two electrode 20 by the mode of eutectic or routing.
This packaging body 50 is rectangular-shaped, is covered on this luminescence chip 40, electrode 20 and the heat-conducting layer 30.This packaging body 50 encapsulates this luminescence chip 40 in it.This packaging body 50 is made by resistant to elevated temperatures light transmissive material, such as organic glass, epoxy resin etc.The free terminal of the branch section 22 of this two electrode 20 stretches out from relative two side direction of this packaging body 50 respectively, so that this electrode 20 is connected with external circuit.The edge of this heat-conducting layer 30 also exposes in the side direction of this packaging body 50, to extraneous heat by conduction amount.
In this light-emitting diode 100, because this pedestal 10 is all covered by electrode 20 and heat-conducting layer 30 towards the end face of luminescence chip 40, therefore, the heat that produces during this light-emitting diode 100 work, can be by electrode 20 and heat-conducting layer 30 simultaneously to pedestal 10 and outsidely pass layer, thereby heat radiation performance greatly.
Fig. 3 shows each step of the manufacture method of the light-emitting diode 100 in above-described embodiment, and this manufacture method mainly comprises seven steps of S1 ~ S5, and is specific as follows:
Step S1 as shown in Figure 4, provides a substrate 60, and this substrate 60 is rectangular and have a smooth end face 61.This substrate 60 is made by the material of insulation and hot pressing distortion, as, epoxy resin, polyethylene, polyethersulfone resin, polytetrafluoroethylene etc.
Step S2, coating one metal foil layer 70 such as Copper Foil, aluminium foil etc., is coated in this metal foil layer 70 on the whole end face 61 of substrate 60 on this substrate 60.
Step S3, as shown in Figure 5, one diel 80 is provided, this diel 80 has a stamping surface 81, this stamping surface 81 is provided with two grooves 82 that the interval arranges, each groove 82 roughly is E shape, and this two groove 82 is symmetrical arranged, and the degree of depth of each groove 82 is greater than the twice of the thickness of this metal foil layer 70.
As shown in Figure 6, with the stamping surface 81 of this diel 80 towards this metal foil layer 70 and substrate 60, and with these diel 80 heating, then with this this metal foil layer 70 of diel 80 punching presses and substrate 60.
As shown in Figure 7, this metal foil layer 70 splits into the electrode 20 of two E shapes and is distributed in this two electrode 20 heat-conducting layer 30 on every side under the punching press of this diel 80, wherein, this two electrode 20 is formed at the place, groove 82 places of this diel 80, then the stamping surface 81 of this diel 80 is by the end face 61 of this this substrate 60 of heat-conducting layer 30 hot pressing, with heat-conducting layer 30 hot pressing in these substrate 60 end faces 61, this end face 61 is by hot compression deformation, thereby form projection 11 in groove 82 places over against diel 80, continue hot pressing, until the bottom surface of this groove 82 with these electrode 20 hot pressing in the top of respective protrusions 11.At this moment, this substrate 60 is shaped to the pedestal 10 of this light-emitting diode 100.
Step S4 provides a luminescence chip 40, and this luminescence chip 40 is fixed on this electrode 20 by the suitable fixed form of its structure choice.For example, as shown in Figure 2, when this luminescence chip 40 is the horizontal type luminescence chip, can be directly by welding two electric contacts of this luminescence chip 40 be electrically connected with two electrodes 20 on this pedestal 10 respectively.When this luminescence chip 40 is the vertical-type chip, the wherein electric contact of this luminescence chip 40 mode by welding can be fixed on the electrode 20 on this pedestal 10, the mode by routing is electrically connected another electric contact of this luminescence chip 40 with another electrode 20 again.
Step S5 forms packaging body 50 on this luminescence chip 40, this packaging body 50 is light transmissive material, such as organic glass, epoxy resin etc.This packaging body 50 takes shape on this luminescence chip 40 by the mode of a glue, also can take shape in by the mode of ejection formation on this luminescence chip 40, again or first preforming package body 50, packaging body 50 is bonded on this pedestal 10 again, during preforming, this packaging body 50 forms the accepting groove 51 (as shown in Figure 2) of accommodating luminescence chip 40, electrode 20 and projection 11 towards the bottom of luminescence chip.
In the manufacture method of above-mentioned light-emitting diode, electrode 20 adopts stamping forming mode to be directly molded on the pedestal 10, do not use chemical reagent, avoided the pollution to environment, and the rim charge direct heat that forms in the punching course is pressed on the pedestal 10 of light-emitting diode 100 as heat-conducting layer 30, not only avoid the waste of rim charge, but also be conducive to the heat radiation of light-emitting diode 100.
The shape of the projection 11 on this electrode 20 and the pedestal 10 can be controlled by the shape that changes the groove 82 in the diel 80, for example, Figure 8 shows that the diel 80a in the method for manufacturing light-emitting that the present invention second implements, the shape of two groove 82a, 83a on the stamping surface 81a of this diel 80a is different, and wherein a groove 82a comprises the first outer side slot 821 of an E shape, the first inner side slot 823 of a circle and one first link slot 823 that this first outer side slot 821 is connected with this first inner side slot 822; Another groove 83a comprises the second outer side slot 831 of an E shape, the second inner side slot 832 of a fan annular and one second link slot 833 that this second outer side slot 831 is connected with this second inner side slot 832.This two groove 82a, 83a space, and this second inner side slot 832 is around the outside of this first inner side slot 822.This first inner side slot 822 has larger area, and therefore, the electrode by this diel 80a moulding is suitable for the vertical type light emitting chip.
By changing the degree of depth of the groove 82 on the tool mould 80, the pedestal 10 and the electrode 20 that can moulding have complicated shape, Figure 9 shows that punch forming process in the method for manufacturing light-emitting that the present invention the 3rd implements, in this embodiment, because the degree of depth of each the groove 82b diverse location on the diel 80b is different, therefore, the pedestal 10b after the moulding and electrode 20b have the 3D stereochemical structure.
Claims (11)
1. light-emitting diode, comprise a substrate, be located at two electrodes on this substrate, it is characterized in that: also be provided with a heat-conducting layer on this substrate, this substrate comprises an end face, this two electrode and this heat-conducting layer all are located on this end face, this heat-conducting layer fits on the end face of this substrate along the edge of this electrode, and spacer insulator mutually between this two electrode and between this two electrode and this heat-conducting layer.
2. light-emitting diode as claimed in claim 1, it is characterized in that: this electrode and this heat-conducting layer are tinsel, and material is identical.
3. 1 light-emitting diode as claimed in claim, it is characterized in that: be interval with two projections on the end face of this substrate, this two electrode fits in respectively the top of this two projection, this heat-conducting layer fits on the end face of this substrate along this protruding edge, and each protruding top is with respect to the height of the end face of this substrate twice greater than the thickness of this heat-conducting layer.
4. light-emitting diode as claimed in claim 3, it is characterized in that: this electrode is identical with this protruding shape, all be E shape, each electrode comprises that a junction reaches some sections from an epitaxial lateral overgrowth of this connecting portion is stretched, the connecting portion of this two electrode is mutually close, and the branch section of this two electrode extends respectively in the opposite direction.
5. 1 light-emitting diode as claimed in claim, it is characterized in that: also comprise a luminescence chip that is electrically connected with this two electrode and encapsulate a packaging body of this luminescence chip, the end of this two electrode stretches out from relative two side direction of this packaging body respectively, and the edge of this heat-conducting layer exposes in the side direction of this packaging body.
6. the described light-emitting diode of 1 to 5 any one as claimed in claim, it is characterized in that: the end face of this pedestal is all covered by electrode and heat-conducting layer.
7. method for manufacturing light-emitting comprises step:
(1) provide a substrate, this substrate is made by the material of insulation and hot pressing distortion, this substrate and have a smooth end face;
(2) coating one metal foil layer on the end face of this substrate;
(3) provide a diel, with this this metal foil layer of diel punching press and substrate, make this metal foil layer split into two electrodes and a heat-conducting layer, this heat-conducting layer fits on the end face of this substrate along the edge of this electrode, and spacer insulator mutually between this two electrode and between this two electrode and this heat-conducting layer.
8. method for manufacturing light-emitting as claimed in claim 7, it is characterized in that: this diel has a stamping surface, this stamping surface is provided with two grooves that the interval arranges, the degree of depth of each groove is greater than the twice of the thickness of this metal foil layer, in the step (3), this two electrode is formed at the place, groove place of this diel, the stamping surface of this diel is by the end face of this this substrate of heat-conducting layer hot pressing, with heat-conducting layer hot pressing at this substrate top surface, this end face is by hot compression deformation simultaneously, thereby form a projection in each groove over against diel, the bottom surface of this groove with this electrode hot pressing in the top of respective protrusions.
9. method for manufacturing light-emitting as claimed in claim 8, the degree of depth of each groove diverse location is different.
10. method for manufacturing light-emitting as claimed in claim 7, it is characterized in that: also comprise step (4): provide a luminescence chip, two electric contacts of this luminescence chip are electrically connected with this two electrode, and on this luminescence chip, form a packaging body, the end of this two electrode stretches out from relative two side direction of this packaging body respectively, and the edge of this heat-conducting layer exposes in the side direction of this packaging body.
11. a light-emitting diode is characterized in that: this light-emitting diode is the described method for manufacturing light-emitting manufacturings of the claims 7 to 10 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210087722 CN103367620A (en) | 2012-03-29 | 2012-03-29 | Light emitting diode and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210087722 CN103367620A (en) | 2012-03-29 | 2012-03-29 | Light emitting diode and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN103367620A true CN103367620A (en) | 2013-10-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210087722 Pending CN103367620A (en) | 2012-03-29 | 2012-03-29 | Light emitting diode and manufacturing method thereof |
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| CN (1) | CN103367620A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108463168A (en) * | 2016-01-21 | 2018-08-28 | 深圳迈瑞生物医疗电子股份有限公司 | Physiological sensing device and physiological monitoring devices including the physiological sensing device |
| CN109298792A (en) * | 2018-11-13 | 2019-02-01 | 杭州师范大学钱江学院 | For the four-way capacitance signal acquisition device of gesture identification and its recognition methods |
-
2012
- 2012-03-29 CN CN 201210087722 patent/CN103367620A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108463168A (en) * | 2016-01-21 | 2018-08-28 | 深圳迈瑞生物医疗电子股份有限公司 | Physiological sensing device and physiological monitoring devices including the physiological sensing device |
| CN109298792A (en) * | 2018-11-13 | 2019-02-01 | 杭州师范大学钱江学院 | For the four-way capacitance signal acquisition device of gesture identification and its recognition methods |
| CN109298792B (en) * | 2018-11-13 | 2023-10-13 | 杭州师范大学钱江学院 | Four-channel capacitance signal acquisition device for gesture recognition and recognition method thereof |
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Application publication date: 20131023 |