CN203774298U - Power semiconductor module with electrode pressure device - Google Patents
Power semiconductor module with electrode pressure device Download PDFInfo
- Publication number
- CN203774298U CN203774298U CN201420044717.1U CN201420044717U CN203774298U CN 203774298 U CN203774298 U CN 203774298U CN 201420044717 U CN201420044717 U CN 201420044717U CN 203774298 U CN203774298 U CN 203774298U
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- CN
- China
- Prior art keywords
- electrode pressure
- pressure apparatus
- power semiconductor
- belt electrode
- injection moulding
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Abstract
A power semiconductor module with an electrode pressure device comprises an insulation metal substrate which is welded with a power semiconductor chip and carries out aluminum wire bonding. A lower portion of the insulation metal substrate is combined with a heat conduction structure body through heat conduction silicone grease. The electrode pressure device is connected to a circuit layer of the insulation metal substrate through pressure via a lower metal support array. The metal support array becomes a circuit component of the power semiconductor module. A plastic outer frame is bonded with the heat conduction structure body through a bottom glue pouring groove filling sealant. The electrode pressure device located in the plastic outer frame possesses a limiting structure which is cooperated with a corresponding structure of an injection molding outer frame. A metal spring is arranged in a metal spring installing hole of an upper portion of the electrode pressure device and is tightly combined with an injection molding cover plate located on an upper surface of the injection molding outer frame so as to generate a down force to the electrode pressure device. The module possesses the following characteristics that the module has high power; heat dissipation performance is good; reliability is high and so on.
Description
Technical field
The utility model relates to a kind of power semiconductor modular of belt electrode pressure apparatus, be mainly used in frequency converter, servo, industrial power, electric motor car.
Background technology
Along with the development of power electronics industry, high-power, high reliability power semiconductor modular is used in frequency converter, servo, industrial power, electric motor car in a large number.When these switchgears of design, mainly use two schemes, a kind of is to use many small-power semiconductor modules in parallel, another is to use single high-power semiconductor module.Yet this two schemes does not all reach expected design effect when reality is used, in the scheme of small-power module parallel connection, the electrical quantity difference of module itself need to first be screened module, and the outside lead symmetry of need to trying one's best causes design difficulty to increase; Although high-power semiconductor module can be avoided parameter differences and the symmetrical problem that goes between, module cost is relatively high, and the alternative power grade of module is less; In addition, these traditional power semiconductor modulars are all used Multilayer welded structure, and the heat transmission between internal heat resource and radiator need to realize by these Welding Structures, and thermal resistance is relatively high, has reduced module long term reliability.
Utility model content
The purpose of this utility model is to overcome the deficiency that prior art exists, and a kind of power semiconductor modular of high-power, thermal diffusivity good, reliability is high belt electrode pressure apparatus is provided.
The purpose of this utility model completes by following technical solution, the power semiconductor modular of described belt electrode pressure apparatus, it comprises that one welds and carry out the insulating metal substrate of aluminum wire bonding with power semiconductor chip, this insulating metal substrate below by heat-conducting silicone grease, be combined with a conductive structure body; The circuit layer that one belt electrode pressure apparatus supports array and insulating metal substrate by lower metal links together by pressure, and described metallic support array becomes the electric circuit constitute part of power semiconductor modular; One plastics housing is bonded together by bottom glue-filling groove filling with sealant and conductive structure body, and the belt electrode pressure apparatus in plastics housing has the position limiting structure coordinating with injection moulding housing corresponding construction; The metal spring installing hole on described belt electrode pressure apparatus top is built-in with metal spring, and by combining closely with an injection moulding cover plate being positioned at above injection moulding housing, belt electrode pressure apparatus is produced to downforce.
Described belt electrode pressure apparatus comprises that a top is provided with the Integral injection molded body of metal spring installing hole, and the below of this injection molding body is provided with contact-making surface with the insulating metal substrate circuit layer metallic support array in same level; The both sides of injection molding body are arranged with respectively the input and output power terminal being connected with metallic support array; The inside of injection molding body is provided with the cylindrical metal terminal stretching out at injection molding body upper surface; The side of injection molding body be provided with half through-hole structure and with injection moulding housing in survey relevant position half through-hole structure cooperatively interact.
Described cylindrical metal terminal is comprised of upper and lower two parts, and the middle elasticity of using connects; Described injection moulding housing is provided with belt electrode pressure apparatus and coordinates retaining structure, and injection moulding housing is also provided with metal screw mounting structure, and bottom is combined with conductive structure body, and top is combined with injection moulding cover plate.
The surfacing of described conductive structure body is in 0.08mm; Metal screw installing hole is left in conductive structure surface.
Described injection moulding cover plate is provided with metal screw mounting structure; Injection moulding cover plate and belt electrode pressure apparatus mating surface are provided with metal spring installing hole, the spacing fore-set of metal spring, and all fore-sets are in same level, and after whole module installation, fore-set Length Ratio metal spring installing hole is deep to when young 1mm.
The utility model is mainly to replace part welding with pressure-acting, realizes the encapsulation of module with less welding; By the scheme of multi-chip parallel connection, be uniformly distributed inside modules thermal source, improve module whole reliability, thereby also solved that the power grade that existing high-power semiconductor module exists is few, poor radiation, manufacture craft are complicated, high in cost of production problem.
Accompanying drawing explanation
Fig. 1 is assembly generalized section of the present utility model.
Fig. 2 is belt electrode pressure apparatus structural representation.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.Shown in Fig. 1,2, the power semiconductor modular of belt electrode pressure apparatus described in the utility model, it comprises that one welds and carry out the insulating metal substrate 3 of aluminum wire bonding with power semiconductor chip 4, this insulating metal substrate 3 below by heat-conducting silicone grease 2, be combined with a conductive structure body 1; The circuit layer that one belt electrode pressure apparatus supports array and insulating metal substrate by lower metal links together by pressure, and described metallic support array becomes the electric circuit constitute part of power semiconductor modular; One plastics housing 7 is bonded together by bottom glue-filling groove filling with sealant and conductive structure body 1, and the belt electrode pressure apparatus in plastics housing 7 has the position limiting structure coordinating with injection moulding housing corresponding construction; The metal spring installing hole on described belt electrode pressure apparatus top is built-in with metal spring, and by combining closely with an injection moulding cover plate being positioned at above injection moulding housing, belt electrode pressure apparatus is produced to downforce.
Belt electrode pressure apparatus shown in Fig. 2 comprises that a top is provided with the Integral injection molded body 66 of metal spring installing hole 63, and the below of this injection molding body 66 is provided with contact-making surface with the insulating metal substrate 3 circuit layers metallic support array 62 in same level; The both sides of injection molding body 66 are arranged with respectively the input and output power terminal 65 being connected with metallic support array 62; The inside of injection molding body 66 is provided with the cylindrical metal terminal 61 stretching out at injection molding body upper surface; The side of injection molding body 66 is provided with half through-hole structure 64 and cooperatively interacts with half through-hole structure of injection moulding housing 7 relevant positions, inner side.
Described cylindrical metal terminal 61 is comprised of upper and lower two parts, and the middle elasticity of using connects; Described injection moulding housing 7 is provided with belt electrode pressure apparatus and coordinates retaining structure, and injection moulding housing 7 is also provided with metal screw mounting structure, and bottom is combined with conductive structure body 1, and top is combined with injection moulding cover plate 8.
The surfacing of described conductive structure body 1 is in 0.08mm; Metal screw installing hole is left on conductive structure body 1 surface.
Described injection moulding cover plate 8 is provided with metal screw mounting structure; Injection moulding cover plate 8 is provided with metal spring installing hole, the spacing fore-set of metal spring with belt electrode pressure apparatus mating surface, and all fore-sets are in same level, and after whole module installation, fore-set Length Ratio metal spring installing hole is deep to when young 1mm.
Embodiment: as shown in Figure 1, insulating metal substrate 3 and the power semiconductor chip 4 of the chemical corrosion of front copper layer weld and complete aluminum wire bonding; Conductive structure body 1 with complete pretreated insulating metal substrate by heat-conducting silicone grease 2 combinations; Injection moulding housing 7 bottom glue-filling groove filling with sealant, bond together with conductive structure body 1, and use metal screw closely fixing; When metallic support array 62 is installed, require to aim at and coordinate with the spacing of injection moulding housing 7 in advance, prevent from damaging internal power semiconductor chip and aluminum steel; Metal spring 9 is put into the corresponding structure of metallic support array 62, then injection moulding cover plate 8 is installed, injection moulding cover plate 8 is closely fixing by metal screw with injection moulding housing 7, module whole installation.
Shown in Fig. 2, belt electrode pressure apparatus described in the utility model is comprised of metallic support array 62, cylindrical metal terminal 61, injection molding body 66 etc., pretreated group is synthesized belt electrode pressure apparatus, the metallic support array 62 of device coordinates with the circuit layer of insulating metal substrate 3, this kind of pressure connected mode adopts the mode of array Multi-contact, the indent producing while efficiently solving insulating metal substrate 3 with power semiconductor chip 4 welding; In addition, insulating metal substrate 3, heat-conducting silicone grease 2, closely cooperating of conductive structure body 1 also derive from the pressure that belt electrode pressure apparatus provides; Top at belt electrode pressure apparatus, by conductive structure body 1, injection moulding housing 7, injection moulding cover plate 8, metal spring, coordinate the assembly forming to provide enough downforce to belt electrode pressure apparatus, simultaneously by the spacing fixed band electrode pressure device on injection moulding housing 7; The inner metallic support array 62 that uses of belt electrode pressure apparatus, corresponding insulating metal substrate 3 circuit layers are also used array way, and the power grade of module can be realized by the chip array of different schemes.In a whole assembling process, only once to weld, remaining circuit, heat conduction connection realize by belt electrode pressure apparatus, can effectively enhance productivity, and reduce production costs.
Claims (5)
1. a power semiconductor modular for belt electrode pressure apparatus, it comprises that one welds and carry out the insulating metal substrate of aluminum wire bonding with power semiconductor chip, this insulating metal substrate below by heat-conducting silicone grease, be combined with a conductive structure body; The circuit layer that one belt electrode pressure apparatus supports array and insulating metal substrate by lower metal links together by pressure, and described metallic support array becomes the electric circuit constitute part of power semiconductor modular; One plastics housing is bonded together by bottom glue-filling groove filling with sealant and conductive structure body, and the belt electrode pressure apparatus in plastics housing has the position limiting structure coordinating with injection moulding housing corresponding construction; The metal spring installing hole on described belt electrode pressure apparatus top is built-in with metal spring, and by combining closely with an injection moulding cover plate being positioned at above injection moulding housing, belt electrode pressure apparatus is produced to downforce.
2. the power semiconductor modular of belt electrode pressure apparatus according to claim 1, it is characterized in that described belt electrode pressure apparatus comprises that a top is provided with the Integral injection molded body of metal spring installing hole, the below of this injection molding body is provided with contact-making surface with the insulating metal substrate circuit layer metallic support array in same level; The both sides of injection molding body are arranged with respectively the input and output power terminal being connected with metallic support array; The inside of injection molding body is provided with the cylindrical metal terminal stretching out at injection molding body upper surface; The side of injection molding body be provided with half through-hole structure and with injection moulding housing in survey relevant position half through-hole structure cooperatively interact.
3. the power semiconductor modular of belt electrode pressure apparatus according to claim 2, is characterized in that described cylindrical metal terminal is comprised of upper and lower two parts, and the middle elasticity of using connects; Described injection moulding housing is provided with belt electrode pressure apparatus and coordinates retaining structure, and injection moulding housing is also provided with metal screw mounting structure, and bottom is combined with conductive structure body, and top is combined with injection moulding cover plate.
4. according to the power semiconductor modular of the belt electrode pressure apparatus described in claim 1 or 3, it is characterized in that the surfacing of described conductive structure body is in 0.08mm; Metal screw installing hole is left in conductive structure surface.
5. the power semiconductor modular of belt electrode pressure apparatus according to claim 1 and 2, is characterized in that described injection moulding cover plate is provided with metal screw mounting structure; Injection moulding cover plate and belt electrode pressure apparatus mating surface are provided with metal spring installing hole, the spacing fore-set of metal spring, and all fore-sets are in same level, and after whole module installation, fore-set Length Ratio metal spring installing hole is deep to when young 1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420044717.1U CN203774298U (en) | 2014-01-24 | 2014-01-24 | Power semiconductor module with electrode pressure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420044717.1U CN203774298U (en) | 2014-01-24 | 2014-01-24 | Power semiconductor module with electrode pressure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203774298U true CN203774298U (en) | 2014-08-13 |
Family
ID=51291455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420044717.1U Expired - Fee Related CN203774298U (en) | 2014-01-24 | 2014-01-24 | Power semiconductor module with electrode pressure device |
Country Status (1)
| Country | Link |
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| CN (1) | CN203774298U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779313A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Power semiconductor module of electrode pressure device |
| CN104319270A (en) * | 2014-10-31 | 2015-01-28 | 广东风华芯电科技股份有限公司 | Tire pressure sensor packaging lead frame |
| CN108701689A (en) * | 2016-02-18 | 2018-10-23 | 三菱电机株式会社 | Power semiconductor modular |
-
2014
- 2014-01-24 CN CN201420044717.1U patent/CN203774298U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779313A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Power semiconductor module of electrode pressure device |
| CN103779313B (en) * | 2014-01-24 | 2017-02-01 | 嘉兴斯达微电子有限公司 | Power semiconductor module of electrode pressure device |
| CN104319270A (en) * | 2014-10-31 | 2015-01-28 | 广东风华芯电科技股份有限公司 | Tire pressure sensor packaging lead frame |
| CN104319270B (en) * | 2014-10-31 | 2017-03-15 | 广东风华芯电科技股份有限公司 | Tire pressure induction apparatuss encapsulating lead |
| CN108701689A (en) * | 2016-02-18 | 2018-10-23 | 三菱电机株式会社 | Power semiconductor modular |
| CN108701689B (en) * | 2016-02-18 | 2021-07-27 | 三菱电机株式会社 | Power semiconductor module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171221 Address after: Jiaxing City, Zhejiang province 314006 Nanhu District Branch Road No. 988 Patentee after: STARPOWER SEMICONDUCTOR LTD. Address before: Jiaxing City, Zhejiang province 314006 Ring Road No. 18 Sidalu Patentee before: Jiaxing Starpower Microelectronics Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140813 Termination date: 20190124 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |