CN103367238B - A kind of low K dielectric layer and forming method thereof - Google Patents
A kind of low K dielectric layer and forming method thereof Download PDFInfo
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- CN103367238B CN103367238B CN201210101641.7A CN201210101641A CN103367238B CN 103367238 B CN103367238 B CN 103367238B CN 201210101641 A CN201210101641 A CN 201210101641A CN 103367238 B CN103367238 B CN 103367238B
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Abstract
The invention provides a kind of low K dielectric layer and forming method thereof, by processing low-K dielectric material layer, to obtain hydrophobic low K dielectric layer, thus avoid the problem that formed low K dielectric layer is easy to absorb moisture, ensure that electric capacity lower between interconnection layer, improve the performance of semiconductor circuit.
Description
Technical field
The present invention relates to field of IC technique, particularly a kind of low K dielectric layer and forming method thereof.
Background technology
In existing semiconductor applications, semiconductor circuit has developed into the integrated circuit (integratedcircuit, IC) with multilayer interconnection.In the IC of multilayer interconnection, the electric conducting material on interconnection layer needs to carry out electric insulation by the electric conducting material on dielectric layer and another interconnection layer.
But in the IC of single or multiple lift interconnection, all can form electric capacity with between the electric conducting material that dielectric layer is separated, the electric capacity that this interconnection is formed is not required in design process.Speed due to IC is inversely proportional to the interconnection resistance (R) of IC and the product of the electric capacity (C) of interconnection, the product of described RC, namely RC constant must be little as far as possible, to promote suitable Signal transmissions and switching speed, and reduces signal cross-talk as far as possible.Along with the growing requirement to IC more high integration and miniaturization of components, be the RC constant restriction in IC to a key constraints of system speed.Therefore, the resistance and the performance raising of electric capacity to IC that reduce IC interconnection play an important role.
Reducing the method for electric capacity between interconnection layer is increase the distance between interconnection layer, but the interval increase between interconnection layer can produce adverse influence, and such as area can increase and corresponding manufacturing cost can increase.Meanwhile, the interval increased between interconnection line can increase physics size, and therefore increase the cost of integrated circuit.
The another kind of method reducing electric capacity between interconnection layer uses low K dielectric layer, namely uses low-K material as the rete realizing electric insulation between interconnection layer.Described low-K material is such as: organic polymer, amorphous chlorination carbon, microminiature foamed plastics, include organic polymer Silicon On Insulator, be doped with the Si oxide of carbon and be doped with the Si oxide of chlorine.Wherein, K represents dielectric coefficient, and high and low is for the dielectric coefficient of silicon dioxide, and the dielectric coefficient of described silicon dioxide is generally 3.9.
Dry etch process is utilized to form low K dielectric layer (the rete shape namely required for final formation) in existing technique, this dry etch process offsets making the K value of low K dielectric layer (being specially bigger than normal), thus the electric capacity caused between interconnection layer is increased, reduce the performance of semiconductor circuit.Please refer to Fig. 1, it is contrast schematic diagram through dry etching and the capacitance without the low K dielectric layer of dry etching.As shown in Figure 1, wherein, K value be 2.55 low K dielectric layer have passed through dry etch process, and K value is that the low K dielectric layer of 2.7 is without dry etch process, as seen from Figure 1, the low K dielectric layer that K value is little has higher capacitance (about 0.25PF/um) on the contrary, and the capacitance of the large low K dielectric layer of K value is about 0.17PF/um.Certainly, other process conditions are all identical, and dry etch process is for the tremendous influence of the K value of low K dielectric layer as can be seen here.
For this reason, inventor has carried out again further research.Find to cause the reason of above-mentioned phenomenon to be, after dry etch process, low K dielectric layer becomes hydrophily by original hydrophobicity.Low K dielectric layer becomes hydrophilic main cause by original hydrophobicity and is: by defining the ionic bond (Si-OH) between silicon and hydroxyl after dry etch process (plasma etching industrial).And further experimental studies have found that, low K dielectric layer often absorbs 1ppm hydrone by causing the capacitance of about 2% and increases, and namely the absorption of hydrone will cause low K dielectric layer that great electric capacity occurs increasing.
Summary of the invention
The object of the present invention is to provide a kind of low K dielectric layer and forming method thereof, the low K dielectric layer formed to solve existing technique is easy to absorb moisture, causes the problem that capacitance increases.
For solving the problems of the technologies described above, the invention provides a kind of low K dielectric layer formation method, comprising:
Low-K dielectric material layer through dry etching is provided;
Described low-K dielectric material layer is processed, to obtain hydrophobic low K dielectric layer.
Optionally, in described low K dielectric layer formation method, process is carried out to described low-K dielectric material layer and comprises:
Methyl alcohol is utilized to carry out chemical treatment to described low-K dielectric material layer.
Optionally, in described low K dielectric layer formation method, described methyl alcohol is supercritical methanol.
Optionally, in described low K dielectric layer formation method, utilize methyl alcohol to carry out chemically treated process conditions to described low-K dielectric material layer to be: temperature 240 DEG C ~ 350 DEG C; Pressure 8Mpa ~ 20MPa.
Optionally, in described low K dielectric layer formation method, described low-K dielectric material layer is processed and also comprises:
Infrared ray is utilized to irradiate the low-K dielectric material layer through methyl alcohol process.
Optionally, in described low K dielectric layer formation method, described ultrared wavelength is 700nm ~ 14000nm.
Optionally, in described low K dielectric layer formation method, the reacting gas of described dry etching comprises: CO, H
2, N
2h
2in one or more.
Optionally, in described low K dielectric layer formation method, the material of described low-K dielectric material layer comprises: organic polymer, amorphous chlorination carbon, microminiature foamed plastics, include organic polymer Silicon On Insulator, be doped with carbon Si oxide and be doped with in the Si oxide of chlorine one or more.
Optionally, in described low K dielectric layer formation method, the K value of described low K dielectric layer is less than 2.7.
Accordingly, present invention also offers a kind of low K dielectric layer, this low K dielectric layer formed by above-mentioned low K dielectric layer formation method.
In low K dielectric layer provided by the invention and forming method thereof, by processing low-K dielectric material layer, to obtain hydrophobic low K dielectric layer, thus avoid the problem that formed low K dielectric layer is easy to absorb moisture, ensure that electric capacity lower between interconnection layer, improve the performance of semiconductor circuit.
Accompanying drawing explanation
Fig. 1 is through dry etching and contrasts schematic diagram with the capacitance without the low K dielectric layer of dry etching;
Fig. 2 is the schematic flow sheet of the low K dielectric layer formation method of the embodiment of the present invention;
Fig. 3 a ~ 3c is the generalized section of the low K dielectric layer formation method of the embodiment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, low K dielectric layer that the present invention proposes and forming method thereof is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, by processing low-K dielectric material layer, to obtain hydrophobic low K dielectric layer, thus avoid the problem that formed low K dielectric layer is easy to absorb moisture, ensure that electric capacity lower between interconnection layer, improve the performance of semiconductor circuit.Namely namely the present invention is to find that the low K dielectric layer caused by dry etch process becomes hydrophilic problem by original hydrophobicity for the first contribution of prior art, and cause the K value of low K dielectric layer to offset (being specially bigger than normal) further, thus the electric capacity caused between interconnection layer is increased, reduce the problem of the performance of semiconductor circuit.Thus, the present invention proposes a kind of technical scheme, this low K dielectric layer through dry etch process is processed, to make it become hydrophobicity, concrete, can be achieved in several ways.And in the present invention, further provide again one preferably implementation, namely utilize methyl alcohol to be achieved.
Please refer to Fig. 2, it is the schematic flow sheet of the low K dielectric layer formation method of the embodiment of the present invention.As shown in Figure 2, described low K dielectric layer formation method comprises the steps:
S20: the low-K dielectric material layer through dry etching is provided;
S21: utilize methyl alcohol to carry out chemical treatment to described low-K dielectric material layer;
S22: utilize infrared ray to irradiate described low-K dielectric material layer, obtain hydrophobic low K dielectric layer.
In the present embodiment, especially by utilizing methyl alcohol chemical treatment carried out to described low-K dielectric material layer and utilize infrared ray to irradiate described low-K dielectric material layer, thus obtaining hydrophobic low K dielectric layer.In other embodiments of the invention, methyl alcohol can be only adopted to carry out chemical treatment to described low-K dielectric material layer or adopt other treatment process, only needing to be treated as hydrophobic by becoming through dry etch process hydrophilic low-K dielectric material layer, namely obtaining hydrophobic low K dielectric layer.
Concrete, please refer to Fig. 3 a ~ 3c, it is the generalized section of the low K dielectric layer formation method of the embodiment of the present invention.
First, as shown in Figure 3 a, the low-K dielectric material layer 30 through dry etching is provided, mentions according to background technology, easily know that low-K dielectric material layer 30 is now hydrophilic.At this, the reacting gas of described dry etching comprises: CO, H
2, N
2h
2in one or more.The material of described low-K dielectric material layer 30 comprises: organic polymer, amorphous chlorination carbon, microminiature foamed plastics, include organic polymer Silicon On Insulator, be doped with carbon Si oxide and be doped with in the Si oxide of chlorine one or more.Common, this low-K dielectric material layer 30 is in without dry etch process, and its K value is less than 2.7, and namely preferably, this low-K dielectric material layer 30 is ultralow K layer of dielectric material.Ultralow K layer of dielectric material can reduce electric capacity between interconnection layer further, improves the performance of semiconductor circuit; Certainly, the hydrophily problem that ultralow K layer of dielectric material faces through dry etch process is more serious, also more can embody necessity and the helpfulness for the treatment of process proposed by the invention.
Then, as shown in Figure 3 b, methyl alcohol (CH is utilized
3oH) chemical treatment is carried out to described low-K dielectric material layer 30, obtain the low-K dielectric material layer 31 through methyl alcohol process.Preferably, described methyl alcohol is supercritical methanol, and supercritical methanol has lower corrosive nature, can improve the protection to production equipment, reduces production cost.Utilize methyl alcohol to carry out chemically treated process conditions to described low-K dielectric material layer 30 to be: temperature 240 DEG C ~ 350 DEG C; Pressure 8Mpa ~ 20MPa.Preferably, described temperature can be 240 DEG C, 250 DEG C, 270 DEG C, 290 DEG C, 310 DEG C, 330 DEG C, 350 DEG C; Described pressure can be 8.09Mpa, 8.20Mpa, 8.50Mpa, 8.90Mpa, 9.50Mpa, 10.00Mpa, 10.20Mpa, 10.80Mpa, 12.00Mpa, 13.00Mpa, 14.00Mpa, 15.00Mpa, 16.00Mpa, 17.00Mpa, 18.00Mpa, 19.00Mpa, 20.00Mpa.
By just to a great extent hydrophily low-K dielectric material layer 30 being become hydrophobicity after methyl alcohol chemical treatment.It is as follows that hydrophily low-K dielectric material layer 30 can be become hydrophobic principle by it:
CH
3OH+R-Si-OH→CH
3-O-Si-R+H
2O↑
At this, by the H atom in the methyl substituted low-K dielectric material layer 30 in methyl alcohol, thus, destroy OH root, just original R-Si-OH can be avoided very easily to absorb hydrone by its OH root, namely solve the hydrophily problem of low-K dielectric material layer 30, ensure that electric capacity lower between interconnection layer, improve the performance of semiconductor circuit.
Preferably, as shown in Figure 3 c, utilize infrared ray 33 to irradiate described low-K dielectric material layer (namely through the low-K dielectric material layer 31 of methyl alcohol process), obtain hydrophobic low K dielectric layer 32.Wherein, described ultrared wavelength is 700nm ~ 14000nm.At this, utilize ultrared thermal effect, the hydrone that may absorb in the chemically treated low-K dielectric material layer 31 of methyl alcohol is removed, thus the K value skew reduced further in K layer of dielectric material 30, namely the K value in low-K dielectric material layer 30 is reduced, thus, reduce further the electric capacity between interconnection layer, improve the performance of semiconductor circuit.Certainly, in other embodiments of the invention, also can remove the hydrone that may absorb by other technique, the application does not limit this.After above-mentioned technique, usually initial K value can be less than the low-K dielectric material layer of 2.7, again be reduced to K value and be less than 2.7, obtain the low K dielectric layer of dependable performance.
Certainly, after above-mentioned technique, will obtain a low K dielectric layer, this low K dielectric layer has hydrophobicity, and its K value is less than 2.7, and uses electric capacity between the layer interconnection layer of this low-K dielectric also will be less, and the performance of semiconductor circuit also will be more excellent.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection range of claims.
Claims (8)
1. a low K dielectric layer formation method, is characterized in that, comprising:
Low-K dielectric material layer through dry etching is provided;
Described low-K dielectric material layer is processed, to obtain hydrophobic low K dielectric layer;
Carry out process to described low-K dielectric material layer to comprise: utilize methyl alcohol carry out chemical treatment to described low-K dielectric material layer and utilize infrared ray to irradiate the low-K dielectric material layer through methyl alcohol process; H atom in methyl substituted low-K dielectric material layer in described chemical treatment nail alcohol, to destroy the OH root in described low-K dielectric material layer.
2. low K dielectric layer formation method as claimed in claim 1, it is characterized in that, described methyl alcohol is supercritical methanol.
3. low K dielectric layer formation method as claimed in claim 1, is characterized in that, utilizes methyl alcohol to carry out chemically treated process conditions to described low-K dielectric material layer and is: temperature 240 DEG C ~ 350 DEG C; Pressure 8Mpa ~ 20MPa.
4. low K dielectric layer formation method as claimed in claim 1, it is characterized in that, described ultrared wavelength is 700nm ~ 14000nm.
5. the low K dielectric layer formation method as described in any one in Claims 1-4, is characterized in that, the reacting gas of described dry etching comprises: CO, H
2, N
2h
2in one or more.
6. the low K dielectric layer formation method as described in any one in Claims 1-4, it is characterized in that, the material of described low-K dielectric material layer comprises: organic polymer, amorphous chlorination carbon, microminiature foamed plastics, include organic polymer Silicon On Insulator, be doped with carbon Si oxide and be doped with in the Si oxide of chlorine one or more.
7. the low K dielectric layer formation method as described in any one in Claims 1-4, is characterized in that, the K value of described low K dielectric layer is less than 2.7.
8. a low K dielectric layer, is characterized in that, by the low K dielectric layer formation method as described in any one in claim 1 to 7 formed.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101416277A (en) * | 2003-10-10 | 2009-04-22 | 东京毅力科创株式会社 | Method and system for treating a dielectric film |
| CN101517708A (en) * | 2005-11-09 | 2009-08-26 | 东京毅力科创株式会社 | Multi-step system and method for curing a dielectric film |
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| US7169540B2 (en) * | 2002-04-12 | 2007-01-30 | Tokyo Electron Limited | Method of treatment of porous dielectric films to reduce damage during cleaning |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101416277A (en) * | 2003-10-10 | 2009-04-22 | 东京毅力科创株式会社 | Method and system for treating a dielectric film |
| CN101517708A (en) * | 2005-11-09 | 2009-08-26 | 东京毅力科创株式会社 | Multi-step system and method for curing a dielectric film |
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