CN103367201B - Annealing device - Google Patents
Annealing device Download PDFInfo
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- CN103367201B CN103367201B CN201310065999.3A CN201310065999A CN103367201B CN 103367201 B CN103367201 B CN 103367201B CN 201310065999 A CN201310065999 A CN 201310065999A CN 103367201 B CN103367201 B CN 103367201B
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- peristome
- environmental gas
- exhaust outlet
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- 238000000137 annealing Methods 0.000 title claims abstract description 135
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 230000007613 environmental effect Effects 0.000 claims abstract description 54
- 238000010438 heat treatment Methods 0.000 claims description 37
- 238000001816 cooling Methods 0.000 claims description 29
- 239000007789 gas Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
The invention provides a kind of annealing device, both had and comparatively simply formed, and only utilize the annealing device that the substrate of heated condition just can cool by Air flow effectively.Substrate is cooled by the resettlement section making environmental gas flow into from outside to accommodate substrate by annealing device of the present invention, and described resettlement section comprises: multiple supporting pin, in order to flatly supporting substrate; Peristome, flows into from outside in the horizontal direction for environmental gas; Exhaust outlet, is arranged on the position relative with peristome, and in order to environmental gas is discharged; And velocity flow profile gives unit, when substrate is flatly supported by supporting pin and cooled by environmental gas, makes in the flowing of the environmental gas of the downside of at least substrate, produce the velocity flow profile that the flow velocity that possesses the side of exhaust outlet compared to peristome side is larger.
Description
Technical field
The present invention relates to a kind of annealing device that substrate is heat-treated, particularly relate to a kind of substrate to heated condition and carry out air cooled device.
Background technology
The technique (process) manufacturing liquid crystal indicator or various semiconductor device etc. comprises so-called photoetching (photolithography) technique, described photoetching process is after the upper surface coating anti-corrosion liquid of the substrate of glass substrate or semiconductor wafer etc., again this substrate is exposed with the pattern of regulation, and then develop.
In described photoetching process, in order to substrate being set to the temperature being suitable for each step, and carry out in technique heating and the cooling that period repeats substrate.Namely, the substrate heated by heating plate (hotplate) etc. when carrying out certain process, is cooled when being provided to the process of back segment after this process terminates.As the device of cooling undertaking substrate in the case, following annealing device is known, namely, the coldplate that internal circulation has cooling agent is possessed in framework, and by the processed substrate-placing of heated condition on outer coldplate, thus processed substrate is cooled (such as with reference to patent documentation 1).
[prior art document]
[patent documentation]
[patent documentation 1] Japanese Patent Laid-Open 2007-324168 publication
Summary of the invention
The problem that invention will solve
Annealing device disclosed in patent documentation 1 in order to improve the homogeneity of the surface temperature of processed substrate, and from air supply pipe to supply gas in framework.More specifically, utilize the cowling panel being arranged on the eaves shape on the top of the upper end of air supply opening, carry out pilot gas.Or, also disclose the form of the nozzle be attached to described cowling panel supply cooling gas.
But, in annealing device disclosed in patent documentation 1, because cooling by means of the coldplate of circulation cooling agent all the time, so form complicated.When arranging the nozzle of cooling gas, described formation is more complicated.And, in annealing device disclosed in patent documentation 1, contact because substrate and coldplate carry out face, so easily cause the particle (particle) being attached to coldplate to be attached to unfavorable condition on substrate.
And with regard to the glass substrate used in liquid crystal indicator etc., the described glass substrate as handling object in usual patent documentation 1 is larger than semiconductor wafer, has the size that tens of cm ~ number m is square.Preferably in the device that this kind of large-sized substrate is heat-treated, except heat treated homogeneity, also consider the convenience of the operation of substrate.
The present invention completes in view of described problem, and object is that providing one both to have comparatively simply is formed, and only utilizes the annealing device that the substrate of heated condition just can cool by Air flow effectively.
Solve the means of problem
In order to solve described problem, the invention of technical scheme 1 is a kind of annealing device, to flow into the resettlement section of accommodating substrate from outside by making environmental gas and substrate is cooled, the feature of described annealing device is: the resettlement section of collecting substrate comprises: multiple supporting pin, in order to flatly supporting substrate; Peristome, flows into from outside in the horizontal direction for described environmental gas; Exhaust outlet, is arranged on the position relative with described peristome, and in order to described environmental gas is discharged; And velocity flow profile gives unit, described substrate flatly to be supported by described supporting pin and by described environmental gas cooling time, make in the flowing of the described environmental gas of the downside of at least described substrate, produce and possess the larger velocity flow profile of the flow velocity of velocity ratio in described peristome side of the side of described exhaust outlet.
The annealing device of invention as described in technical scheme 1 of technical scheme 2, it is characterized in that: the described velocity flow profile distance of giving the described substrate with described resettlement section of unit by making the side possessing described exhaust outlet than the described substrate of described peristome side and the distance of described resettlement section narrow, and produce described velocity flow profile.
The annealing device of invention as described in technical scheme 2 of technical scheme 3, is characterized in that: it is the jump arranged in the side possessing described exhaust outlet and the described peristome side of the bottom of described resettlement section that described velocity flow profile gives unit.
The annealing device of invention as described in technical scheme 3 of technical scheme 4, is characterized in that: the forming position of described jump and the distance of described peristome are less than more than 1/4 3/4 of the distance of described peristome and the position possessing described exhaust outlet.
The invention of technical scheme 5 is a kind of annealing devices, utilize the temperature difference of the environmental gas of substrate and surrounding and described substrate is cooled, the feature of described annealing device is: have the heat treatment space of being surrounded by following each portion: bottom, forms by multiple supporting pins of flatly supporting substrate are outstanding, sidepiece, with described bottom vertical, top part is relative with described bottom, and inner end, with described bottom, described sidepiece, and described top part is vertical, described inner end comprises the exhaust outlet in order to be discharged from described heat treatment space by environmental gas, described annealing device also comprises velocity flow profile and gives unit, described velocity flow profile gives unit to cool the described substrate flatly supported by described supporting pin, and discharge described environmental gas from described exhaust outlet, thus, when making new described environmental gas flow into described heat treatment space, at least in the downside of described substrate, produce and possess the larger velocity flow profile of the flow velocity of velocity ratio in the peristome side of described heat treatment space of the described environmental gas of the side of described exhaust outlet.
The annealing device of invention as described in technical scheme 5 of technical scheme 6, it is characterized in that: the described velocity flow profile distance of giving the described substrate with described bottom of unit by making the side possessing described exhaust outlet than the described substrate of described peristome side and the distance of described bottom narrow, and produce described velocity flow profile.
The annealing device of invention as described in technical scheme 6 of technical scheme 7, is characterized in that: it is the jump arranged in the side possessing described exhaust outlet and the described peristome side of described bottom that described velocity flow profile gives unit.
The annealing device of invention as described in technical scheme 7 of technical scheme 8, is characterized in that: the forming position of described jump and the distance of described peristome are less than more than 1/4 3/4 of the distance of described peristome and described inner end.
The effect of invention
According to the invention of technical scheme 1 to technical scheme 8, import environmental gas by means of only from device outside, namely only utilize Air flow, just can keep temperature uniformity and effectively carry out the cooling of the substrate of the state flatly supported by pin.
Accompanying drawing explanation
Fig. 1 is the stereoscopic figure of annealing device 1.
Fig. 2 is the stereogram of the situation of the inside representing annealing device 1.
Fig. 3 is the stereogram of the situation of the inside representing annealing device 1.
Fig. 4 is the order difference part 3 of annealing device 1 under the state supported by supporting pin P by substrate W and the ideograph of the section vertical with X-axis.
Fig. 5 is the stereogram of annealing device 1001.
Fig. 6 is the ideograph of the section vertical with X-axis of annealing device 1001 under the state that supported by supporting pin P of substrate W.
The size of glass substrate used in assessment when Fig. 7 is the time variations of the Temperature Distribution representing assessment substrate W, the figure with temperature measuring position (passage).
Fig. 8 is by temperature when utilizing annealing device 1 (1A) to heat-treat, and is expressed as the figure of the difference value relative to temperature when utilizing annealing device 1001 to heat-treat.
Fig. 9 is by temperature when utilizing annealing device 1 (1B) to heat-treat, and is expressed as the figure of the difference value relative to temperature when utilizing annealing device 1001 to heat-treat.
Figure 10 is by temperature when utilizing annealing device 1 (1C) to heat-treat, and is expressed as the figure of the difference value relative to temperature when utilizing annealing device 1001 to heat-treat.
Figure 11 is the stereogram of the annealing device 201 representing variation.
Figure 12 is the stereogram of the annealing device 301 representing variation.
Figure 13 is the stereogram of the annealing device 401 representing variation.
The explanation of symbol:
1,201,301,401,1001: annealing device
1a:(annealing device) bottom
1b, 1c:(annealing device) sidepiece
1d:(annealing device) top part
1e:(annealing device) inner end
1f:(annealing device) leg
2: heat treatment space
2a: peristome
3: order difference part
3a, 403a: the 1st order difference part
3b, 403b: the 2nd order difference part
3c, 403c: the 3rd order difference part
3s: jump face
4,304: gap
5: exhaust outlet
203: rake
203s: jump face
A: the Y direction distance from peristome 2a to jump face 3s
H0: the distance from top part 1d to substrate W
H1: the distance from the bottom 1a to substrate W of the side of peristome 2a
H2: the height of the jump of bottom 1a
H3: the distance from the bottom 1a to substrate W of order difference part 3
L: the distance (the Y direction distance of bottom 1a) from the peristome 2a to inner end 1e of bottom 1a
P: supporting pin
P1: the 1 pin
P2: the 2 pin
W: substrate
X, Z, Y: direction
Embodiment
The formation > of < annealing device
Fig. 1 is the stereoscopic figure of the annealing device 1 of embodiments of the present invention.In addition, in Fig. 1 and later accompanying drawing, the XYZ coordinate system of the X-axis right-handed system orthogonal in horizontal plane with Y-axis is jointly enclosed.
The annealing device 1 of present embodiment is the device utilizing the temperature difference of the environmental gas around substrate W and device (typical case is air) described substrate W to be cooled to (Air flow).Therefore, be in the environmental gas of relative low temperature in the temperature before treatment compared to the substrate W as handling object, use annealing device 1.Such as, about normal temperature (about 10 DEG C ~ about 30 DEG C) environmental gas in, till the substrate W being heated to 100 DEG C ~ about 200 DEG C is cooled near normal temperature, be the representative use form of annealing device 1.
As shown in Figure 1, annealing device 1 is roughly the rectangular drum like body with the end that substrate W can be accommodated in inside.Annealing device 1 comprises: bottom 1a, and 2 sidepiece 1bs, sidepiece 1c of mutually subtend vertical with bottom 1a, the top part 1d relative with bottom 1a, and with 1a, sidepiece 1b bottom these, inner end 1e that sidepiece 1c, top part 1d are all vertical.By surrounded by these positions, and form heat treatment space 2 in the inside of annealing device 1, this heat treatment space 2 has peristome 2a in the position relative with inner end 1e, thus becomes the resettlement section of substrate W.
And annealing device 1 possesses the leg 1f supporting whole device in the corner of the bottom of bottom 1a.Annealing device 1 is used under the state that bottom 1a is level at leg 1f kiss the earth.Wherein, possessing leg 1f is not required form, as long as can guarantee the level of bottom 1a, then the mounting of annealing device 1 entirety or the mode of support are not particularly limited.And, mentioned herein and ground, also comprise the top part etc. of the annealing device 1 of lower floor when identical annealing device 1 piles up multilayer.
In Fig. 1, annealing device 1 is expressed as: bottom 1a and top part 1d is vertical with Z axis, and heat treatment space 2 extends along Y direction, and peristome 2a is positioned at-Y side end.After, be described using this configuration relation as prerequisite.
Fig. 2 and Fig. 3 is the stereogram of the inner case representing annealing device 1, is equivalent to eliminate sidepiece 1b, a part of sidepiece 1c and top part 1d from the annealing device 1 shown in Fig. 1.Wherein, Fig. 2 represents that substrate W is not configured at the state of heat treatment space 2, and Fig. 3 represents that substrate W is configured at the state of heat treatment space 2.
As shown in Figures 2 and 3, the bottom 1a of annealing device 1 has jump in the midway of the bearing of trend (Y direction) of heat treatment space 2.Upside and the downside of jump all become horizontal plane.After, the vertical plane forming jump is called jump face 3s, the part from jump face 3s to the upside of the jump of inner end 1e in the 1a of bottom is specially called as order difference part 3.
Observe from peristome 2a, order difference part 3 is roughly arranged on the inner side of heat treatment space 2.Wherein, specifically, order difference part 3 along X-direction, and when being divided into top view is respectively rectangular-shaped the 1st order difference part 3a, the 2nd order difference part 3b and the 3rd order difference part 3c.1st order difference part 3a contacts with sidepiece 1c and inner end 1e.2nd order difference part 3b contacts with inner end 1e.3rd order difference part 3c contacts with sidepiece 1b and inner end 1e.In addition, between 1st order difference part 3a and the 2nd order difference part 3b and the gap 4 of the 2nd order difference part 3b and the 3rd order difference part 3c becomes following space, and this space is moved for the conveyance arm possessed in not shown transport mechanism (conveying machine people) in order to carrying out the moving into of substrate W between heat treatment space 2 and outside, when taking out of.
In addition, at bottom 1a, the multiple supporting pin P in order to flatly supporting substrate W during heat treatment give prominence to from bottom 1a relative to heat treatment space 2 vertical (towards Fig. 1 Z axis positive direction).After, the supporting pin being configured in the position except order difference part 3 of bottom 1a in supporting pin P is called the 1st pin P1, the supporting pin being configured in order difference part 3 is called the 2nd pin P2.Though it is different that the 1st pin P1 and the 2nd sells P2 length, the height and position of upper end is made all to be aligned to unanimously, so that make can flatly supporting substrate W.In addition, in Fig. 2 and Fig. 3, exemplified with the situation possessing 5 the 1st pin P1 and 3 the 2nd and sell P2, but the number of supporting pin P or allocation position are not limited to the example shown in Fig. 2 and Fig. 3.
And annealing device 1 possesses exhaust outlet 5 at inner end 1e.Exhaust outlet 5 is the through hole being connected to not shown exhaust apparatus from outside.As exhaust apparatus, such as, well-known suction pump etc. can be used.
Fig. 4 is the order difference part 3 of annealing device 1 under the state supported by supporting pin P by substrate W and the ideograph of the section vertical with X-axis.Wherein, Fig. 4 represents not by the section of supporting pin P.And in Fig. 4, bottom when observing with section, 1a arranges order difference part 3 under the bending form in 2 positions, but this is not required form.Such as also can be following form, that is, form order difference part 3 at the horizontal plane extended from peristome 2a side by loading the component of other formation horizontal plane.
As shown in Figure 4, in annealing device 1, the distance from top part 1d to substrate W is set to H0.Distance H0 is defined as follows, that is, the moving into of substrate W, take out of period, when being remained on by conveyance arm than the position high by the height of supporting pin P supporting substrate W, substrate W can not come in contact with top part 1d.On the other hand, when the value of distance H0 set greatly to essential value, cooling effectiveness does not improve sometimes, and exhaust efficiency can be deteriorated on the contrary.The concrete value of distance H0 is different because of the thickness of substrate W or the shape, structure etc. of conveyance arm, and such as, distance H0 is preferably about 30mm ~ 100mm.
And as shown in Figure 4, in annealing device 1, the distance the bottom 1a to substrate W from peristome 2a side is set to H1, and the height of the jump of bottom 1a is set to H2, the distance from the bottom 1a to substrate W of order difference part 3 is set to H3.Distance H1, distance H3 are respectively the length of the 1st outstanding pin P1 of heat treated space 2, the 2nd pin P2, namely, by the height of the 1st pin P1, the 2nd pin P2 supporting substrate W.Distance H3 must be defined as follows: even if produce flexure in the substrate W supported by supporting pin P, substrate W also can not come in contact with order difference part 3.The concrete value of distance H3 is different because of the thickness of substrate W or the shape, structure etc. of conveyance arm, as distance H3, preferably minimumly guarantees about 20mm.And, if make distance H3 become excessive, then fully cannot obtain the effect possessing order difference part 3 described later.From this viewpoint, distance H3 is preferably set to less than 1/2 of distance H1.
The heat treated summary > of <
Then, the heat treated summary had in the annealing device 1 of above formation is described.When heat-treating, first, utilize the conveyance arm of not shown transport mechanism, the high-temperature substrates W becoming handling object supported from below is kept the upper end height and position by the top than supporting pin P, and moves into the top of the Support Position of the regulation in heat treatment space 2.As described, because ensure that distance H0, so substrate W and top part 1d does not come in contact when moving into described in carrying out.And now, the advance and retreat position of conveyance arm and the position consistency in gap 4, thus conveyance arm does not also come in contact with annealing device 1.
When behind this Support Position of arrival, if make conveyance arm decline, then substrate W declines, and is supported by supporting pin P at the time point of the upper-end contact with supporting pin P.If substrate W is supported by supporting pin P, then conveyance arm retreats from heat treatment space 2.According to more than, achieve shown in Fig. 3 and Fig. 4 in heat treatment space 2 by the state of supporting pin P supporting substrate W.
If achieve described holding state, then exhaust apparatus work and discharge the environmental gas in heat treatment space 2 from exhaust outlet 5.Along with described exhaust, new environmental gas is from peristome 2a (Y-axis positive direction) inflow constantly in the horizontal direction.Namely, in heat treatment space 2, roughly formed towards the flowing of the environmental gas of Y-axis positive direction.In other words, the displacement of continuous print environmental gas is realized.And the temperature of the environmental gas of inflow is lower than substrate W, thus there is the heat exchange between substrate W and environmental gas continuously, thus in time through and substrate W is cooled lentamente.If be cooled to below set point of temperature, then the heat treatment of substrate W terminates.
After heat treatment terminates, conveyance arm is inserted in heat treatment space 2 in the position lower than substrate W, if rise to the holding position of regulation, then the substrate W supported by supporting pin P utilizes conveyance arm and is maintained from below.If keep substrate W, then conveyance arm keeps this state and retreats from heat treatment space 2.In addition, now, the rising of substrate W is carried out in the scope do not come in contact with top part 1d, the advance and retreat position of conveyance arm and the position consistency in gap 4.According to more than, substrate W takes out of from heat treatment space 2.
The effect > of < heat treatment and jump
Then, to being possessed jump by annealing device 1 and the effect obtained when heat treatment is described.
Fig. 5 is the stereogram of annealing device 1001, and to carry out contrast known with annealing device 1, described annealing device 1001 except not there is jump and multiple supporting pin P all identical except, there is the formation identical with annealing device 1.Wherein, sidepiece 1b, sidepiece 1c and top part 1d is eliminated in Fig. 5.The heat treatment of the substrate W in annealing device 1001, the mode of the namely cooling of substrate W are identical with annealing device 1.And Fig. 6 is the ideograph of the section vertical with X-axis of annealing device 1001 under the state that supported by supporting pin P of substrate W.Wherein, in the same manner as Fig. 4, Fig. 6 also represents not by the section of supporting pin P.
First, in the annealing device 1001 shown in Fig. 5 and Fig. 6, consider to carry out the heat treatment with the substrate W of described homomorphosis, namely flow into environmental gas to carry out situation about cooling by means of heat treated space 2.In this situation, in the upside of substrate W, because being identical in position with the range-independence of annealing device 1001, as long as so the exhaust conditions of discharging from exhaust outlet 5 is fixing, then the flow velocity Va of the environmental gas of the upside of substrate W has nothing to do the position in Y direction and be roughly fixing.Similarly, in the downside of substrate W, also have nothing to do with the distance of annealing device 1001 and be in position identical, thus the flow velocity Vb of environmental gas of downside also has nothing to do the position in Y direction and be roughly fixing.
But, in described situation, flow into the environmental gas of heat treatment space 2 from peristome 2a, advance along with towards Y-axis positive direction, and utilization is heated with the heat exchange of substrate W.Therefore, from peristome 2a side more towards inner end 1e side, then the temperature of environmental gas is higher.Therefore, more leave the near side of oral area 2a then substrate W more quickly cooled, and the situation producing substrate W from the side close to inner end 1e and not easily cool.Namely, can say in the cooling procedure by means of annealing device 1001, the temperature easily producing each the interior position of substrate W is uneven.
On the other hand, when annealing device 1 of present embodiment, as shown in Figure 4, about the upside of substrate W, in the same manner as annealing device 1001, be identical in position with the range-independence of annealing device 1, as long as the exhaust conditions of thus discharging from exhaust outlet 5 is fixing, then the flow velocity V of environmental gas has nothing to do the position in Y direction and be roughly fixing.But locating on the lower than substrate W, because possessing order difference part 3 from the side close to inner end 1e, thus beyond the forming part in gap 4, in peristome 2a side and inner end 1e side, the distance to annealing device 1 is different.If directly said, be except a part then, in inner end 1e side, than substrate W space on the lower narrower than peristome 2a side.Therefore, when heat-treating, even if the exhaust conditions of discharging from exhaust outlet 5 is fixing, compared to flow velocity (value average in the X-direction strictly speaking) V1 of the environmental gas of peristome 2a side, and flow velocity (the same) V2 of the environmental gas of inner end 1e side is larger.Namely, in annealing device 1, because possessing order difference part 3, and form following velocity flow profile in the downside of substrate W, that is, the flow velocity possessing the environmental gas of the inner end 1e side of exhaust outlet 5 compared to peristome side is larger.
Thus, when annealing device 1, as lower aspect is identical with annealing device 1001, namely, from peristome 2a side more towards inner end 1e side, the temperature of environmental gas is higher, but due to large from the position flow velocity close to inner end 1e, so the environmental gas heated by substrate W can be discharged from exhaust outlet 5 quickly than the environmental gas heated by annealing device 1001.Namely, if compared with annealing device 1001, even if then to the environmental gas from the position supply low temperature close to inner end 1e, also can effectively cool.In addition, as described the downside of substrate W is cooled effectively, thus compared to the cooling of the upside of substrate W, and can more easily carry out.As a result, in annealing device 1, only utilize Air flow just effectively can carry out the uneven little and cooling that homogeneity is high of the temperature of each the interior position of substrate W.
In addition, distance (the Y direction distance of bottom 1a) peristome 2a to inner end 1e from bottom 1a is being set to L, when being set to a from the Y direction distance peristome 2a to jump face 3s, the forming position of the jump face 3s in preferred Y direction is defined as and meets L/4≤a≤3L/4.In this situation, preferably realize the homogeneity cooled by forming described velocity flow profile.
And, carry out the height H 2 of regulation jump according to described distance H3, but in order to preferably obtain the homogeneity of cooling by forming described velocity flow profile, be preferably set to more than 1/2 of distance H1.
The actual measurement assessment > of < cooling procedure
Below, actually carry out the cooling employing annealing device 1 and annealing device 1001, and the result of the time variations of the Temperature Distribution of assessment substrate W is described.Fig. 7 represents the size of the glass substrate used in assessment and the figure of temperature measuring position (passage).
In assessment, as substrate W, as shown in Figure 7, the glass substrate that long edge lengths is 920mm, bond length is 730mm, thickness is 0.7mm is used.And, in glass substrate, amount to the temperature measuring position (1CH ~ 25CH) at 25 positions with the rectangular setting at 5 positions, position × 5, thermocouple (thermocouple) is installed to each position.And, glass substrate is heated to about 170 DEG C, then, moves into in annealing device 1 or annealing device 1001, and cool.In addition, the temperature of environmental gas is about 20 DEG C.When moving into, the long limit of glass substrate is parallel with X-direction, minor face is parallel with Y direction, and the temperature measuring position at following setting 25 positions: it is near that 1CH ~ 5CH leaves oral area 2a, after, according to the order of 6CH ~ 10CH, 11CH ~ 15CH, 16CH ~ 20CH, 21CH ~ 25CH close to inner end 1e.In addition, the group of these passages in units of 5CH is called passage group.
In addition, as annealing device 1, prepare 3 kinds of annealing devices that jump position (forming position of the jump face 3s in Y direction) is different.Specifically, prepare to make described distance a as 3 annealing devices 1A, 1B, 1C different as following.
Annealing device 1A:a=L/4;
Annealing device 1B:a=L/2;
Annealing device 1C:a=3L/4.
Fig. 8 to Figure 10 is by temperature when utilizing each annealing device 1 (1A, 1B, 1C) to heat-treat, and is expressed as the figure of the difference value relative to temperature when utilizing annealing device 1001 to heat-treat.Fig. 8 represents the result about annealing device 1A, and Fig. 9 represents the result about annealing device 1B, and Figure 10 represents the result about annealing device 1C.
More specifically, the measured value of each CH inscribed when measuring about each in each annealing device 1 (1A, 1B, 1C) and annealing device 1001, by the value of measured value gained deducted from the measured value in annealing device 1001 in each annealing device 1 (1A, 1B, 1C), after in addition average for the group of the identical passage in the position in each Y direction and passage group, (plot) is mapped to heat treatment time.In addition, in Fig. 8 to Figure 10, for convenience's sake, the measured value about annealing device 1 is called " example temperature ", the measured value about annealing device 1001 is called " comparative example temperature ".
In Fig. 8 to Figure 10, when certain of certain passage group measures, the difference value inscribed is expressed as follows implication greatly: in the position of this passage group, this time the annealing device 1 inscribed in cooling raio annealing device 1001 in cooling progress faster.
According to Fig. 8 to Figure 10, in any one annealing device in 3 kinds of annealing devices 1, except the cooling initial stage, the difference value in nearly all passage group is just.Difference value is for be just expressed as follows implication, that is, under synchronization, in the position of the same passage group of substrate W, the cooling progress of the cooling raio annealing device 1001 of annealing device 1 is faster; Thus this result represents, arranges jump in the mode at least meeting L/4≤a≤3L/4 at bottom 1a, for the raising of the efficiency of cooling effectively.In addition, only when the 1CH-5CH of Fig. 8 and Fig. 9, after the cooling period the phase and in the scope of 0 DEG C ~-1 DEG C described difference value be negative, think that this is in peristome 2a vicinity, obtain the result caused by high cooling effect in annealing device 1001, and have nothing to do with the effect of jump.
Especially at a=L/2 as shown in Figure 9, namely jump is in the annealing device 1B of the middle of bottom 1a when carrying out cooling, and the difference value in 21CH ~ 25CH is maximum, and then difference value in 16CH ~ 20CH is large.This represents in annealing device 1B, more effectively carries out the cooling of the substrate W from the position close to inner end 1e.
Above, as described, according to the present embodiment, the annealing device make environmental gas flow into from peristome at the forced exhaust utilized from inner space, cooling thus to the substrate supported by pin in the inner space of side's opening, in bottom, jump is set, and in the downside of substrate, compared to the flow velocity of the environmental gas near peristome, the flow velocity of the environmental gas near exhaust outlet is larger, thus, only utilize Air flow just can keep temperature uniformity and effectively carry out the cooling of substrate.Further, utilize and form the comparatively simple and operability of substrate and be also comparatively easy to device and carry out this and effectively cool, described device is by substrate-placing on pin, and only utilizes the inflow of the environmental gas by means of exhaust to cool.
< variation >
The form realizing velocity flow profile in annealing device is not limited to the form described in described execution mode.Figure 11 to Figure 13 is the stereogram of the various variation representing annealing device.In either case, under the state that substrate W is supported by supporting pin P, form following velocity flow profile in the downside of substrate W, that is, compared near peristome 2a, and the flow velocity of environmental gas near inner end 1e is larger.Thus, the raising of the cooling effectiveness of substrate W is realized.
Annealing device 201 shown in Figure 11, more then and under the narrower form in the interval of substrate W is possessing rake 203, to replace possessing order difference part 3 at bottom 1a towards inner end 1e.Rake 203 possesses leg-of-mutton jump face 203s in the position vertical with X-axis.
Annealing device 301 shown in Figure 12 has following formation: sidepiece 1b, sidepiece 1c and order difference part 3 separate, and forms gap 304 in this spaced portions.Describedly be configured to following formation: when being conceived to the velocity flow profile of X-direction, consider the tendency having flow velocity relatively to increase near sidepiece 1b, sidepiece 1c.
In annealing device 401 shown in Figure 13, the jump face 403s of the 1st order difference part 403a and the 3rd order difference part 403c becomes curved surface, between, possesses more towards inner end 1e then and the curved surface rake 403b of the narrower form in the interval of substrate W.Figure 13 represents that jump face need not be rectangle, and order difference part also can have curve form.
Or also can be following form: the order difference part possess the annealing device shown in described execution mode or Figure 11 to Figure 13 or rake etc. are in addition appropriately combined.
And, in described execution mode, in the upside of substrate W, range-independence with top part 1d is set to fixing in position, in the upside of substrate W, as long as do not hinder the moving into of substrate W, take out of, then also can to form the mode of velocity flow profile to form annealing device 1 under the form arranging jump etc.
And in described execution mode, set order difference part is 1 section, but also can be set to the jump from peristome side towards exhaust side and periodically increases the structure of (stage shape).By being set to this kind of structure, the raising of cooling effectiveness in large-sized substrate, also can be realized.
Claims (6)
1. an annealing device, flowing into the resettlement section of accommodating substrate from outside by making environmental gas and cooled by described substrate, the feature of described annealing device is:
The described resettlement section of accommodating described substrate comprises:
Multiple supporting pin, in order to flatly to support described substrate;
Peristome, flows into from outside in the horizontal direction for described environmental gas;
Exhaust outlet, is arranged on the position relative with described peristome, and in order to described environmental gas is discharged; And
Velocity flow profile gives unit, described substrate flatly to be supported by described supporting pin and by described environmental gas cooling time, make in the flowing of the described environmental gas of the downside of at least described substrate, produce and possess the larger velocity flow profile of the flow velocity of velocity ratio in described peristome side of the side of described exhaust outlet, the described velocity flow profile distance of giving the described substrate with described resettlement section of unit by making the side possessing described exhaust outlet than the described substrate of described peristome side and the distance of described resettlement section narrow, and produce described velocity flow profile.
2. annealing device according to claim 1, is characterized in that: it is the jump arranged in the side possessing described exhaust outlet and the described peristome side of the bottom of described resettlement section that described velocity flow profile gives unit.
3. annealing device according to claim 2, is characterized in that: the forming position of described jump and the distance of described peristome are less than more than 1/4 3/4 of the distance of described peristome and the position possessing described exhaust outlet.
4. an annealing device, utilize the temperature difference of the environmental gas of substrate and surrounding and cooled by described substrate, the feature of described annealing device is:
There is the heat treatment space of being surrounded by following each portion:
Bottom, forms by the multiple supporting pins flatly supporting described substrate are outstanding;
Sidepiece, with described bottom vertical;
Top part is relative with described bottom; And
Inner end, vertical with described bottom, described sidepiece and described top part,
Described inner end comprises the exhaust outlet in order to be discharged from described heat treatment space by environmental gas,
Described annealing device also comprises velocity flow profile and gives unit, described velocity flow profile gives unit to cool the described substrate flatly supported by described supporting pin, and discharge described environmental gas from described exhaust outlet, thus, when making new described environmental gas flow into described heat treatment space, at least in the downside of described substrate, produce and possess the larger velocity flow profile of the flow velocity of velocity ratio in the peristome side of described heat treatment space of the described environmental gas of the side of described exhaust outlet, the described velocity flow profile distance of giving the described substrate with described bottom of unit by making the side possessing described exhaust outlet than the described substrate of described peristome side and the distance of described bottom narrow, and produce described velocity flow profile.
5. annealing device according to claim 4, is characterized in that: it is the jump arranged in the side possessing described exhaust outlet and the described peristome side of described bottom that described velocity flow profile gives unit.
6. annealing device according to claim 5, is characterized in that: the forming position of described jump and the distance of described peristome are less than more than 1/4 3/4 of the distance of described peristome and described inner end.
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| JP2012076172A JP5856890B2 (en) | 2012-03-29 | 2012-03-29 | Heat treatment equipment |
| JP2012-076172 | 2012-03-29 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1381872A (en) * | 2001-02-28 | 2002-11-27 | 日本派欧尼股份株式会社 | Chemical vapour-phase deposition device and chemical vapour-phase deposition method |
| US7780438B2 (en) * | 2005-05-09 | 2010-08-24 | Tokyo Electron Limited | Substrate heating apparatus and method and coating and developing system |
| CN102116667A (en) * | 2011-01-14 | 2011-07-06 | 重庆工业自动化仪表研究所 | Large-aperture gas flow calibration device capable of providing two flow fields |
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| JPH087133B2 (en) * | 1990-08-31 | 1996-01-29 | 日機装株式会社 | Reference value calibration method for surface area measuring device |
| JPH0897124A (en) * | 1994-09-29 | 1996-04-12 | Hitachi Ltd | Surface processor |
| JP3909222B2 (en) * | 2000-06-20 | 2007-04-25 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| JP4087133B2 (en) | 2002-03-22 | 2008-05-21 | 株式会社リコー | Electronic circuit board cooling structure |
| KR100706236B1 (en) | 2004-11-11 | 2007-04-11 | 삼성전자주식회사 | Dry cleaning apparatus used in manufacturing semiconductor devices |
| JP5105396B2 (en) * | 2006-04-12 | 2012-12-26 | 東京応化工業株式会社 | Heat treatment device |
| KR100825967B1 (en) | 2006-11-03 | 2008-04-29 | (주)리드 | Interface unit, substrates treating apparatus and substrates temperature control method using the same |
| JP4559454B2 (en) * | 2007-07-06 | 2010-10-06 | エスペック株式会社 | Plate cooling device, heat treatment system |
| JP5195640B2 (en) * | 2009-05-22 | 2013-05-08 | 東京エレクトロン株式会社 | Heat treatment equipment |
| JP5107318B2 (en) * | 2009-08-24 | 2012-12-26 | 東京エレクトロン株式会社 | Heat treatment device |
| JP5525972B2 (en) * | 2010-09-06 | 2014-06-18 | 大日本スクリーン製造株式会社 | Substrate cooling device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1381872A (en) * | 2001-02-28 | 2002-11-27 | 日本派欧尼股份株式会社 | Chemical vapour-phase deposition device and chemical vapour-phase deposition method |
| US7780438B2 (en) * | 2005-05-09 | 2010-08-24 | Tokyo Electron Limited | Substrate heating apparatus and method and coating and developing system |
| CN102116667A (en) * | 2011-01-14 | 2011-07-06 | 重庆工业自动化仪表研究所 | Large-aperture gas flow calibration device capable of providing two flow fields |
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| JP5856890B2 (en) | 2016-02-10 |
| KR101442394B1 (en) | 2014-09-17 |
| CN103367201A (en) | 2013-10-23 |
| TW201340213A (en) | 2013-10-01 |
| KR20130111275A (en) | 2013-10-10 |
| TWI505369B (en) | 2015-10-21 |
| JP2013207164A (en) | 2013-10-07 |
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