CN103346099B - The thinning On-Line Control Method of TSV wafer based on infrared technique and system - Google Patents

The thinning On-Line Control Method of TSV wafer based on infrared technique and system Download PDF

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Publication number
CN103346099B
CN103346099B CN201310240770.9A CN201310240770A CN103346099B CN 103346099 B CN103346099 B CN 103346099B CN 201310240770 A CN201310240770 A CN 201310240770A CN 103346099 B CN103346099 B CN 103346099B
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Prior art keywords
wafer
thinning
tsv wafer
infrared sensor
back side
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CN103346099A (en
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姜峰
顾海洋
何洪文
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Beijing Zhongke micro Intellectual Property Service Co., Ltd.
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National Center for Advanced Packaging Co Ltd
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Priority to US14/253,484 priority patent/US20150099423A1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The invention discloses a kind of thinning On-Line Control Method of TSV wafer based on infrared technique and system, the method includes infrared sensor carries out record calibration, determine infrared sensor normal place on lapping device and be fixed, setting the TSV wafer back side initial set value to via bottoms distance；TSV wafer is carried out technique for thinning back side；Utilize infrared sensor to launch infrared ray, obtain some echos and be received；Utilizing data processor to filter out the echo of via bottoms in TSV wafer, in calculating thinning process, the TSV wafer back side is to the distance of via bottoms；Distance in thinning process and initial set value are carried out real-time, interactive；When distance is equal to initial set value in thinning process, stop the thinning back side of TSV wafer.The present invention have effectively achieved noncontacting measurement, it is possible in accurate control TSV wafer, metallic conduction column bottom is to the thickness of wafer rear, and certainty of measurement is high.

Description

The thinning On-Line Control Method of TSV wafer based on infrared technique and system
Technical field
The present invention relates to microelectronics technology, particularly relate to a kind of TSV wafer based on infrared technique Thinning On-Line Control Method and system.
Background technology
Along with terminal client is more and more higher to the requirement of electronic product, the thickness forward of chip is the thinnest Direction is developed.In this case, it is subject to put forward high performance mode by reducing the live width of interconnection line further To physical characteristics of materials and the restriction of apparatus and process, so the concept of silicon through hole is put forward in time.
Silicon through hole (Through Silicon Via is called for short TSV) technique is stood by forming metal in wafer Post, it is achieved direct three-dimensional interconnection between wafer (chip) or between chip and substrate, so can greatly subtract The thickness of little overall package.This interconnection mode has three compared with traditional Stack Technology such as bonding techniques Dimension direction stacking density is big, the advantages such as overall dimensions is little after encapsulation, and is greatly improved the speed of chip also Reduce power consumption.Therefore, silicon through hole technology has been widely regarded as forth generation encapsulation technology, will gradually become Mainstream technology for high-density packages field.
Prepare silicon through hole wafer firstly the need of making conducting metal post on wafer, then by the method for grinding The back side of wafer is carried out reduction process, thinning final position to close on conducting metal post as target, one As wafer thickness is controlled from conducting metal column bottom 1～5 μm.
Prior art reduction process is generally divided into two ways:
1, contact: contact end thereof contacts wafer, other end contact reference point, and then draw whole wafer Thickness；
2, contactless: with optical pickocff, the thickness of the whole wafer of non-cpntact measurement.Key point herein It is the thickness measuring wafer rear to front metal layer.
Although above two method can obtain conducting metal column bottom distance wafer by measuring THICKNESS CALCULATION The distance at the back side, but in concrete technology, the degree of depth that wafer punches and the degree of depth of conducting metal post deposition All having error to a certain extent, therefore said method can not be accurately obtained conducting metal column bottom distance The distance of wafer rear, can cause certain impact to follow-up technique.
Therefore, for above-mentioned technical problem, it is necessary to provide a kind of TSV wafer based on infrared technique to subtract Thin On-Line Control Method and system, to improve the accuracy of wafer reduction process further.
Summary of the invention
In view of this, it is an object of the invention to provide the TSV based on infrared technique that a kind of accuracy is high The thinning On-Line Control Method of wafer and system.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
A kind of thinning On-Line Control Method of TSV wafer based on infrared technique, described method includes following step Rapid:
S1, infrared sensor is carried out record calibration, determine infrared sensor standard on lapping device Position is also fixed, and sets the TSV wafer back side initial set value to via bottoms distance；
S2, TSV wafer is carried out technique for thinning back side；
S3, utilize infrared sensor launch infrared ray, obtain some echos and be received；
S4, utilize data processor to filter out the echo of via bottoms in TSV wafer, calculate thinned In journey, the TSV wafer back side is to the distance of via bottoms；
S5, the distance at the TSV wafer back side in thinning process to via bottoms and initial set value are carried out reality Time mutual；
S6, when in thinning process the TSV wafer back side to via bottoms distance equal to initial set value time, Stop the thinning back side of TSV wafer.
As a further improvement on the present invention, in described step S2 " technique for thinning back side " include corase grind, One or more in fine grinding, polishing.
As a further improvement on the present invention, the initial set value in described step S1 is less than thinning front TSV The thickness of wafer.
As a further improvement on the present invention, in described step S1 the TSV wafer back side to via bottoms away from From initial set value more than 1um.
As a further improvement on the present invention, the measurement frequency of described infrared sensor is more than or equal to 50 times / the second.
As a further improvement on the present invention, the infrared ray that described infrared sensor is launched is near-infrared ripple.
Correspondingly, a kind of system realizing the thinning On-Line Control Method of TSV wafer based on infrared technique, Described system includes the bogey for carrying wafer and the lapping device for thinned wafer, described system System also includes being fixed on described bogey or lapping device for measuring the TSV wafer back side at the bottom of through hole The infrared sensor of portion's distance, it is arranged at the measurement window bottom described infrared sensor and with described The measurement feedback system that infrared sensor is connected.
As a further improvement on the present invention, described infrared sensor include infrared emission and receive circuit, Signal amplifies and filter circuit and data processor.
As a further improvement on the present invention, described measurement window includes blowning installation or deionized water injection Device.
As a further improvement on the present invention, the extreme lower position of described infrared sensor is higher than lapping device Extreme lower position.
The thinning On-Line Control Method of present invention TSV wafer based on infrared technique and system have following useful Effect:
Have effectively achieved noncontacting measurement, certainty of measurement is high；
Can accurately control metallic conduction column bottom in TSV wafer to the thickness of wafer rear rather than whole Individual wafer thickness, provides conveniently for subsequent wafer technique.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to reality Execute the required accompanying drawing used in example or description of the prior art to be briefly described, it should be apparent that below, Accompanying drawing in description is only some embodiments described in the present invention, for those of ordinary skill in the art From the point of view of, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the concrete of the thinning On-Line Control Method of a kind of based on infrared technique TSV wafer of the present invention Flow chart；
Fig. 2 is the structure of the thinning on-line control system of a kind of based on infrared technique TSV wafer of the present invention Schematic diagram；
Fig. 3 is the plan structure schematic diagram of bogey in the embodiment of the invention；
Fig. 4 is to measure the TSV wafer back side principle to via bottoms distance based on infrared technique in the present invention Schematic diagram.
Detailed description of the invention
Describe the present invention below with reference to detailed description of the invention shown in the drawings.But these are real The mode of executing is not limiting as the present invention, and those of ordinary skill in the art is made according to these embodiments Structure, method or conversion functionally are all contained in protection scope of the present invention.
As it is shown in figure 1, the thinning On-Line Control Method of a kind of based on infrared technique TSV wafer of the present invention Comprise the following steps:
S1, infrared sensor is carried out record calibration, determine infrared sensor standard on lapping device Position is also fixed, and sets the TSV wafer back side initial set value to via bottoms distance；
S2, TSV wafer is carried out technique for thinning back side；
S3, utilize infrared sensor launch infrared ray, obtain some echos and be received；
S4, utilize data processor to filter out the echo of via bottoms in TSV wafer, calculate thinned In journey, the TSV wafer back side is to the distance of via bottoms；
S5, the distance at the TSV wafer back side in thinning process to via bottoms and initial set value are carried out reality Time mutual；
S6, when in thinning process the TSV wafer back side to via bottoms distance equal to initial set value time, Stop the thinning back side of TSV wafer.
Correspondingly, a kind of thinning on-line control system of TSV wafer based on infrared technique, this system includes For carrying the bogey of wafer and for the lapping device of thinned wafer, described bogey or grinding Be fixed with on device for measure the TSV wafer back side to via bottoms distance infrared sensor, be arranged at Measurement window bottom infrared sensor and the measurement feedback system being connected with infrared sensor.
Be illustrated in figure 2 TSV wafer based on infrared technique in the embodiment of the invention thinning The structural representation of line control system.This system includes bogey 10, lapping device 20, TSV wafer 30 are positioned on bogey 10, use lapping device 20 to carry out the thinning back side of TSV wafer 30. Preferably, in present embodiment, bogey 10 is additionally provided with layer protecting film 11, TSV wafer 30 It is positioned on this protecting film 11, bogey in reduction process can be reduced TSV wafer Facad structure is made The damage become.
It is illustrated in figure 3 the plan structure schematic diagram of bogey 10, bogey in the present embodiment In be provided with 3 for the plummer carrying wafer, the number of plummer can also in other embodiments It is set to other quantity.
Lapping device 20 includes power transmission shaft 21 and the chassis 22 of fixing connection, and bottom surface, chassis 22 includes some Grind section 23, the thinning of TSV wafer is realized by grind section 23.
Present embodiment mid-infrared sensor 40 is fixedly installed on the chassis 22 of lapping device 20, infrared Sensor 40 is achieved a fixed connection by installation portion 24 with chassis 22, and other embodiment mid-infrareds sense Device 40 can also be fixedly installed on bogey 10.The lower section of infrared sensor 40 includes a measurement window Mouth 41, measurement window 41 includes blowning installation or deionized water injection apparatus.During measurement, measurement window 41 carry out blowing or spraying deionized water, ensure that measurement is little the most disturbed with this, improve further The degree of accuracy measured.
Present embodiment mid-infrared sensor 40 includes infrared emission and receives circuit, signal amplification and filtering Circuit and data processor, infrared sensor 40 is also associated with a measurement feedback system.During measurement, Infrared sensor is by infrared emission and receives circuit transmission infrared ray, obtains some echos and connects Receiving, signal amplifies and the reflection wave signal received is amplified by filter circuit, and removes in echo Clutter, utilize data processor to filter out the echo of via bottoms in TSV wafer, calculate thinned In journey, the TSV wafer back side is to the distance of via bottoms.
In a detailed description of the invention of the present invention, the thinning On-line Control of TSV wafer based on infrared technique Method comprises the following steps:
S1, infrared sensor is carried out record calibration, determine infrared sensor standard on lapping device Position is also fixed, and sets the TSV wafer back side initial set value to via bottoms distance.
Being fixed on the chassis of lapping device by infrared sensor, time thinning, power transmission shaft drives chassis and infrared Sensor moves simultaneously, and the TSV wafer back side can be carried out thinning by the grind section on chassis.
Need techniques such as wafer rear perform etching after wafer is thinning, and then expose TSV conductive pole, logical In the case of Chang, the TSV wafer back side and is preferred, initially with 1～20um to the distance of via bottoms more than 1um Setting value is less than the thickness of thinning front TSV wafer, and in present embodiment, initial set value is set to 5um。
S2, TSV wafer is carried out technique for thinning back side.
Technique for thinning back side includes roughly grinding, refine, polish in one or more, it is preferable that the most right TSV wafer carries out back side corase grind, then refines, and is finally polished.
In the present embodiment, choosing the TSV wafer that a thickness is 700um, wafer can be Silicon Wafer Or glass wafer, TSV conductive pole is copper post and a height of 200um, uses above-mentioned technique for thinning back side pair TSV wafer is ground.
S3, utilize infrared sensor launch infrared ray, obtain some echos and be received.
Preferably, the infrared ray that infrared sensor is launched in the present embodiment is near-infrared ripple.
S4, utilize data processor to filter out the echo of via bottoms in TSV wafer, calculate thinned In journey, the TSV wafer back side is to the distance of via bottoms.
Being illustrated in figure 4 the measuring principle figure of mid-infrared sensor of the present invention, infrared sensor is launched infrared Line R1, R2, infrared ray can carry out reflecting and reflecting at crystal column surface simultaneously.If infrared ray R1 is at TSV At wafer rear partially reflective, infrared ray R2 at wafer rear part refraction, the infrared ray of refraction exists Reflecting outside TSV wafer after the bottom reflection of TSV conductive pole, such infrared ray R1, R2 are through anti-again Two bundle correlation interference light can be formed after penetrating and/or reflecting, can exist in the hope of infrared light R2 according to principle of interference The refraction distance of inside wafer, can be calculated the TSV wafer back side at the bottom of through hole further according to the law of refraction The distance in portion.
S5, the distance at the TSV wafer back side in thinning process to via bottoms and initial set value are carried out reality Time mutual.
The measurement frequency of infrared sensor is more than or equal to 50 times/second, and each measurement all can obtain current TS V The distance tried to achieve, to the distance of via bottoms, is compared by wafer rear with initial set value 5um.Red The measurement frequency of outer sensor is the biggest, and the real-time of reduction process is the best, and degree of accuracy is the highest.
S6, when in thinning process the TSV wafer back side to via bottoms distance equal to initial set value time, Stop the thinning back side of TSV wafer.
When the distance that infrared sensor detects is 5um, stop silicon through hole wafer by measurement feedback system Thinning back side.
As can be seen from the above technical solutions, the present invention can measure the TSV wafer back of the body by infrared sensor Face, to the distance of via bottoms, has the advantages that
Have effectively achieved noncontacting measurement, certainty of measurement is high；
Can accurately control metallic conduction column bottom in TSV wafer to the thickness of wafer rear rather than whole Individual wafer thickness, provides conveniently for subsequent wafer technique.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, And without departing from the spirit or essential characteristics of the present invention, it is possible to real in other specific forms The existing present invention.Therefore, no matter from the point of view of which point, embodiment all should be regarded as exemplary, and Being nonrestrictive, the scope of the present invention is limited by claims rather than described above, therefore purport All changes in falling in the implication of equivalency and scope of claim are included in the present invention. Should not be considered as limiting involved claim by any reference in claim.
Moreover, it will be appreciated that although this specification is been described by according to embodiment, but the most each reality Mode of executing only comprises an independent technical scheme, and this narrating mode of description is only for understand Seeing, those skilled in the art should be using description as an entirety, and the technical scheme in each embodiment is also Other embodiments that it will be appreciated by those skilled in the art that can be formed through appropriately combined.

Claims (4)

1. the thinning system of TSV wafer based on infrared technique, described system includes for carrying wafer Bogey and for the lapping device of thinned wafer, it is characterised in that described system also includes fixing For measuring infrared to via bottoms distance of the TSV wafer back side on described bogey or lapping device Sensor, be arranged at the measurement window bottom described infrared sensor and with described infrared sensor phase Measurement feedback system even；
Wherein, described bogey is provided with on multiple plummer, and described bogey and is additionally provided with one Layer protecting film, described lapping device includes power transmission shaft and the chassis of fixing connection, and undersurface of bottom disc includes some Grind section.
System the most according to claim 1, it is characterised in that described infrared sensor includes infrared Launch and receive circuit, signal amplification and filter circuit and data processor.
System the most according to claim 1, it is characterised in that described measurement window includes dress of blowing Put or deionized water injection apparatus.
System the most according to claim 1, it is characterised in that the lowest order of described infrared sensor Set high the extreme lower position in lapping device.
CN201310240770.9A 2013-06-17 2013-06-17 The thinning On-Line Control Method of TSV wafer based on infrared technique and system Active CN103346099B (en)

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US14/253,484 US20150099423A1 (en) 2013-06-17 2014-04-15 TSV Wafer Thinning Controlling Method and System

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