CN103336150A - A method for improving the conductivity of an atomic force nanometer probe - Google Patents
A method for improving the conductivity of an atomic force nanometer probe Download PDFInfo
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- CN103336150A CN103336150A CN2013102178184A CN201310217818A CN103336150A CN 103336150 A CN103336150 A CN 103336150A CN 2013102178184 A CN2013102178184 A CN 2013102178184A CN 201310217818 A CN201310217818 A CN 201310217818A CN 103336150 A CN103336150 A CN 103336150A
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Abstract
The invention brings forward a method for improving the conductivity of an atomic force nanometer probe. The method comprises the following steps: a conductive substance is in contact with at least one or a plurality of oxidized atomic force nanometer probes; voltage differences are applied between each oxidized atomic force nanometer probe and the conductive substance sequentially, so that parts of oxides of the oxidized atomic force nanometer probes are broken down; the former step is repeated until conductivity of the atomic force nanometer probes is improved. The invention also brings forward another method for improving the conductivity of the atomic force nanometer probe. The method comprises the following steps: the conductive substance is in contact with the at least two oxidized atomic force nanometer probes; voltage differences are applied between one oxidized atomic force nanometer probe and each one of the rest oxidized atomic force nanometer probes sequentially to break down a part of the oxides of the oxidized atomic force nanometer probes; the former step is repeated until the conductivity of the atomic force nanometer probes is improved, so that the accuracy of sample tests in failure analysis can be guaranteed and the usage life of the atomic force nanometer probes is prolonged.
Description
Technical field
The invention belongs to the semiconductor test technical field, relate in particular to a kind of method of improving atomic force nano-probe electric conductivity.
Background technology
When semiconductor samples is carried out failure analysis, need the needle point 2 contact sample surfaces with AFP (atomic force nano-probe) 1, the synoptic diagram of atomic force nano-probe as shown in Figure 1, come sample is pressurizeed by the atomic force nano-probe being applied voltage, sample pressurization back startup work produces the electric current of hundreds of microampere, sample is tested with the atomic force nano-probe with realization.
It is oxidized that but the atomic force nano-probe is easy in air, influences the electric conductivity of atomic force nano-probe, and the atomic force nano-probe can not form good the contact with sample when causing test, influences the serviceable life of test result and atomic force nano-probe.Because the atomic force nano-probe is very fine, its radius has only about 65 nanometers, can't remove the oxide layer on atomic force nano-probe surface with conventional method, can only change after the atomic force nano-probe is oxidized, the synoptic diagram of oxidized atomic force nano-probe as shown in Figure 2, when the atomic force nano-probe is exposed in the air, atomic force nano-probe surface has formed layer of oxide layer 3, thereby influences its electric conductivity.
For this reason, be badly in need of providing a kind of method that can improve atomic force nano-probe electric conductivity effectively, with the accuracy of assurance failure analysis sample test, and the serviceable life that prolongs the atomic force nano-probe.
Summary of the invention
The purpose of this invention is to provide a kind of method of improving atomic force nano-probe electric conductivity, the accuracy of sample test when carrying out failure analysis in order to assurance, and the problem that prolongs the serviceable life of atomic force nano-probe.
For addressing the above problem, the invention provides a kind of method of improving atomic force nano-probe electric conductivity, comprise the steps:
Step 1: conductive materials contact have at least one or the oxidation of many velamens the atomic force nano-probe;
Step 2: will apply voltage difference between every described oxidized atomic force nano-probe and conductive materials successively, the partial oxide that is applied with the described oxidized atomic force nano-probe of voltage difference is punctured;
Step 3: repeating step 2, until the oxide breakdown of the predetermined area of the described oxidized atomic force nano-probe that will be applied with voltage difference.
Further, described oxidized atomic force nano-probe applies high voltage, described conductive materials ground connection.
Further, in each step 2, the described voltage difference that applies is identical or different.
Further, the described voltage difference that applies is 2 volts-20 volts.
Further, in each step 2, on the described oxidized atomic force nano-probe when applying voltage the restriction electric current, described electric current big or small identical or different.
Further, described electric current is not more than 10 milliamperes.
For addressing the above problem, the present invention also provides a kind of method of improving atomic force nano-probe electric conductivity, comprises the steps:
Step 10: the atomic force nano-probe that at least two velamen oxidations are arranged in conductive materials contact;
Step 20: will apply voltage difference between a described oxidized atomic force nano-probe and remaining every described oxidized atomic force nano-probe successively, the partial oxide that is applied with the described oxidized atomic force nano-probe of voltage difference is punctured;
Step 30: repeating step 20, until the oxide breakdown of the predetermined area of the described oxidized atomic force nano-probe that will be applied with voltage difference.
Further, a described oxidized atomic force nano-probe is applied high voltage, successively with remaining every described oxidized atomic force nano-probe ground connection.
Further, in each step 20, the described voltage difference that applies is identical or different.
Further, the described voltage difference that applies is 2 volts-20 volts.
Further, in each step 20, described oxidized atomic force nano-probe limits electric current when applying voltage, described electric current big or small identical or different.
Further, described electric current is not more than 10 milliamperes.
By above technical scheme as can be known, the method of improving atomic force nano-probe electric conductivity disclosed by the invention, by applying voltage difference respectively between the atomic force nano-probe of a velamen oxidation and conductive materials or between the atomic force nano-probe of two velamen oxidations, the partial oxide that is applied with the described oxidized atomic force nano-probe of voltage difference is punctured, repeat above-mentioned steps, oxide breakdown until the predetermined area of the described oxidized atomic force nano-probe that will be applied with voltage difference, thereby can improve the electric conductivity of atomic force nano-probe effectively, and then the accuracy of conductive materials test when guaranteeing failure analysis and the serviceable life that has prolonged the atomic force nano-probe.
Description of drawings
Fig. 1 is the structural representation of the atomic force nano-probe among the prior art embodiment;
Fig. 2 is the structural representation of the oxidized atomic force nano-probe among the prior art embodiment;
Fig. 3 is the schematic flow sheet of the method for improving atomic force nano-probe electric conductivity in the embodiment of the invention one;
Fig. 4 a-4b is one of structural representation of the method for improving atomic force nano-probe electric conductivity shown in Figure 3;
Fig. 5 a-5e is to two of the structural representation of the method for improving atomic force nano-probe electric conductivity shown in 3;
Fig. 6 is the schematic flow sheet of the method for improving atomic force nano-probe electric conductivity in the embodiment of the invention two;
Fig. 7 a-7d is the structural representation of the method for improving atomic force nano-probe electric conductivity shown in Figure 6.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
Embodiment one
Be example with schematic flow sheet shown in Figure 3, branch situation one and situation two are described in detail a kind of method of improving atomic force nano-probe electric conductivity provided by the invention.
Situation one:
In step 1, shown in Fig. 4 a, provide an atomic force nano-probe 10, contact on the oxidized one deck oxide 30 that is formed with of described atomic force nano-probe 10, the needle point 20 of described atomic force nano-probe 10 and a conductive materials 40.
In step 2, shown in Fig. 4 a, described oxidized atomic force nano-probe applies high voltage, described conductive materials 40 ground connection, be that described oxidized atomic force nano- probe 10 and 40 of conductive materials are applied with voltage difference, the scope of described voltage difference can be 2 volts-20 volts, and then described voltage difference punctures the partial oxidation layer of described oxidized atomic force nano-probe.
When step 2, restriction electric current when described oxidized atomic force nano-probe applies voltage, the size of described electric current is not more than 10 milliamperes, and its purpose is to damage described oxidized atomic force nano-probe owing to electric current is excessive in order to prevent.
In step 3, repeating step 2, during each repeating step 2, the described voltage difference that applies can be identical, also can be difference, all described oxidized atomic force nano-probe further can be enlarged in the position of the breakdown oxide of previous step, the oxide breakdown until with the predetermined area of described oxidized atomic force nano-probe forms shown in Fig. 4 b.And during each repeating step 2, it is identical that the size of described electric current can be restricted to, and also can be restricted to difference.
Situation two:
In step 1, shown in Fig. 5 a, provide many atomic force nano-probes 10, the every oxidized one deck oxide 30 that is formed with of described atomic force nano-probe 10, the needle point 20 of every described atomic force nano-probe 10 all with on the same conductive materials 40 contacts.In most preferred embodiment of the present invention, the radical of described atomic force nano-probe 10 is 3, only with in order better technology of the present invention and effect to be described, and is not used in restriction the present invention.
In step 2, shown in Fig. 5 a, first described oxidized atomic force nano-probe applied high voltage, described conductive materials 40 ground connection, then first described oxidized atomic force nano- probe 10 and 40 of conductive materials are applied with voltage difference, the scope of described voltage difference can be 2 volts-20 volts, and then described voltage difference punctures the partial oxidation layer of first described oxidized atomic force nano-probe.
When step 2, first described oxidized atomic force nano-probe limits electric current when applying voltage, the size of described electric current is not more than 10 milliamperes, and its purpose is to damage first described oxidized atomic force nano-probe owing to electric current is excessive in order to prevent.
In step 3, repeating step 2, during each repeating step 2, the described voltage difference that applies can be identical, also can be difference, all first described oxidized atomic force nano-probe further can be enlarged in the position of the breakdown oxide of previous step, the oxide breakdown until with the predetermined area of first described oxidized atomic force nano-probe forms shown in Fig. 5 b.And during each repeating step 2, it is identical that the size of described electric current can be restricted to, and also can be restricted to difference.
Second described oxidized atomic force nano-probe and 40 of described conductive materials are applied voltage difference, shown in Fig. 5 b, process according to the step 2 in the situation two of present embodiment one and step 3 is carried out, oxide breakdown until with the predetermined area of second described oxidized atomic force nano-probe forms shown in Fig. 5 c.
The 3rd described oxidized atomic force nano-probe and 40 of described conductive materials are applied voltage difference, shown in Fig. 5 d, process according to the step 2 in the situation two of present embodiment one and step 3 is carried out, oxide breakdown until with the predetermined area of the 3rd described oxidized atomic force nano-probe forms shown in Fig. 5 e.
Embodiment two
Be example with schematic flow sheet shown in Figure 6, in conjunction with Fig. 7 a-7d, a kind of method of improving atomic force nano-probe electric conductivity that the present invention is also provided is described in detail.
In step 10, shown in Fig. 7 a, at least two atomic force nano-probes 10 are provided, the every oxidized one deck oxide 30 that is formed with of described atomic force nano-probe 10, the needle point 20 of every described atomic force nano-probe 10 all with on the same conductive materials 40 contacts.In most preferred embodiment of the present invention, the radical of described atomic force nano-probe 10 is 3, only with in order better technology of the present invention and effect to be described, and is not used in restriction the present invention.
In step 20, shown in Fig. 7 a, first described oxidized atomic force nano-probe 10 applied high voltage, with second described oxidized atomic force nano-probe 10 ground connection, then be applied with voltage difference between first described oxidized atomic force nano-probe 10 and second described oxidized atomic force nano-probe, the scope of described voltage difference can be 2 volts-20 volts, and then described voltage difference punctures the partial oxidation layer of the described oxidized atomic force nano-probe of first described oxidized atomic force nano-probe and second simultaneously.
In step 20, first described oxidized atomic force nano-probe and second described oxidized atomic force nano-probe limit electric current when applying voltage, the size of described electric current is not more than 10 milliamperes, and its purpose is to damage first described oxidized atomic force nano-probe and second described oxidized atomic force nano-probe owing to electric current is excessive in order to prevent.
In step 30, repeating step 20, during each repeating step 20, the described voltage difference that applies can be identical, also can be difference, all first described oxidized atomic force nano-probe and second described oxidized atomic force nano-probe further can be enlarged in the position of the breakdown oxide of previous step, oxide breakdown until with the predetermined area of the described oxidized atomic force nano-probe of first described oxidized atomic force nano-probe and second forms shown in Fig. 7 b.And during each repeating step 2, it is identical that the size of described electric current can be restricted to, and also can be restricted to difference.
First described oxidized atomic force nano-probe applied high voltage, with the 3rd described oxidized atomic force nano-probe ground connection, then be applied with voltage difference between first described oxidized atomic force nano-probe 10 and the 3rd described oxidized atomic force nano-probe, shown in Fig. 7 c, process according to the step 2 in the present embodiment two and step 3 is carried out, oxide breakdown until with the predetermined area of the 3rd described oxidized atomic force nano-probe forms shown in Fig. 7 d.
This shows, the method of improving atomic force nano-probe electric conductivity disclosed by the invention, by applying voltage difference respectively between the atomic force nano-probe of a velamen oxidation and conductive materials or between the atomic force nano-probe of two velamen oxidations, the partial oxide that is applied with the described oxidized atomic force nano-probe of voltage difference is punctured, repeat above-mentioned steps, oxide breakdown until the predetermined area of the described oxidized atomic force nano-probe that will be applied with voltage difference, thereby can improve the electric conductivity of atomic force nano-probe effectively, and then the accuracy of conductive materials test when guaranteeing failure analysis and the serviceable life that has prolonged the atomic force nano-probe.
Each embodiment adopts the mode of going forward one by one to describe in this instructions, and what each embodiment stressed is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.For the disclosed system of embodiment, because corresponding with the embodiment disclosed method, so description is fairly simple, relevant part partly illustrates referring to method and gets final product.
The professional can also further recognize, unit and the algorithm steps of each example of describing in conjunction with embodiment disclosed herein, can realize with electronic hardware, computer software or the combination of the two, for the interchangeability of hardware and software clearly is described, composition and the step of each example described in general manner according to function in the above description.These functions still are that software mode is carried out with hardware actually, depend on application-specific and the design constraint of technical scheme.The professional and technical personnel can specifically should be used for using distinct methods to realize described function to each, but this realization should not thought and exceeds scope of the present invention.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these revise and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these change and modification.
Claims (12)
1. a method of improving atomic force nano-probe electric conductivity is characterized in that, comprises the steps:
Step 1: the atomic force nano-probe that at least one or the oxidation of many velamens are arranged in conductive materials contact;
Step 2: will apply voltage difference between every described oxidized atomic force nano-probe and conductive materials successively, the partial oxide that is applied with the described oxidized atomic force nano-probe of voltage difference is punctured;
Step 3: repeating step 2, until the oxide breakdown of the predetermined area of the described oxidized atomic force nano-probe that will be applied with voltage difference.
2. the method for improving atomic force nano-probe electric conductivity according to claim 1 is characterized in that, described oxidized atomic force nano-probe applies high voltage, described conductive materials ground connection.
3. the method for improving atomic force nano-probe electric conductivity according to claim 1 is characterized in that, in each step 2, the described voltage difference that applies is identical or different.
4. the method for improving atomic force nano-probe electric conductivity according to claim 3 is characterized in that, the described voltage difference that applies is 2 volts-20 volts.
5. the method for improving atomic force nano-probe electric conductivity according to claim 1 is characterized in that, in each step 2, described oxidized atomic force nano-probe limits electric current when applying voltage, described electric current big or small identical or different.
6. the method for improving atomic force nano-probe electric conductivity according to claim 5 is characterized in that, described electric current is not more than 10 milliamperes.
7. a method of improving atomic force nano-probe electric conductivity is characterized in that, comprises the steps:
Step 10: the atomic force nano-probe that at least two velamen oxidations are arranged in conductive materials contact;
Step 20: will apply voltage difference between a described oxidized atomic force nano-probe and remaining every described oxidized atomic force nano-probe successively, the partial oxide that is applied with the described oxidized atomic force nano-probe of voltage difference is punctured;
Step 30: repeating step 20, until the oxide breakdown of the predetermined area of the described oxidized atomic force nano-probe that will be applied with voltage difference.
8. the method for improving atomic force nano-probe electric conductivity according to claim 7 is characterized in that, a described oxidized atomic force nano-probe is applied high voltage, successively with remaining every described oxidized atomic force nano-probe ground connection.
9. the method for improving atomic force nano-probe electric conductivity according to claim 7 is characterized in that, in each step 20, the described voltage difference that applies is identical or different.
10. the method for improving atomic force nano-probe electric conductivity according to claim 9 is characterized in that, the described voltage difference that applies is 2 volts-20 volts.
11. the method for improving atomic force nano-probe electric conductivity according to claim 1 is characterized in that, in each step 20, described oxidized atomic force nano-probe limits electric current when applying voltage, described electric current big or small identical or different.
12. the method for improving atomic force nano-probe electric conductivity according to claim 11 is characterized in that, described electric current is not more than 10 milliamperes.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103605064A (en) * | 2013-10-23 | 2014-02-26 | 上海华力微电子有限公司 | Method for preventing electric leakage of probe test carrier |
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| CN102109569A (en) * | 2009-12-29 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | Method for dielectric breakdown test on gate oxide adopting probe card |
| CN102519885A (en) * | 2011-12-14 | 2012-06-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Material surface local spectral measuring apparatus and measuring method |
| CN102721832A (en) * | 2012-06-25 | 2012-10-10 | 天津大学 | Preparation method and application of metal tungsten nano-probe |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101508420A (en) * | 2009-03-31 | 2009-08-19 | 北京大学 | Nano-electrode production method based on single-root carbon nano-tube |
| CN102109569A (en) * | 2009-12-29 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | Method for dielectric breakdown test on gate oxide adopting probe card |
| CN102519885A (en) * | 2011-12-14 | 2012-06-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Material surface local spectral measuring apparatus and measuring method |
| CN102721832A (en) * | 2012-06-25 | 2012-10-10 | 天津大学 | Preparation method and application of metal tungsten nano-probe |
Cited By (2)
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| CN103605064A (en) * | 2013-10-23 | 2014-02-26 | 上海华力微电子有限公司 | Method for preventing electric leakage of probe test carrier |
| CN103605064B (en) * | 2013-10-23 | 2016-04-27 | 上海华力微电子有限公司 | Prevent the method for electric leakage of probe test carrier |
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Application publication date: 20131002 |