CN103326682A - Adjustable operational transconductance amplifier with high linearity - Google Patents
Adjustable operational transconductance amplifier with high linearity Download PDFInfo
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- CN103326682A CN103326682A CN2013102011858A CN201310201185A CN103326682A CN 103326682 A CN103326682 A CN 103326682A CN 2013102011858 A CN2013102011858 A CN 2013102011858A CN 201310201185 A CN201310201185 A CN 201310201185A CN 103326682 A CN103326682 A CN 103326682A
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Abstract
The invention provides an adjustable operational transconductance amplifier with high linearity. The adjustable operational transconductance amplifier can be adjusted to linear gain under the condition that an input signal range is selected. The adjustable operational transconductance amplifier comprises an input stage for receiving input signals and further comprises a tuning circuit connected between the input stage and an output stage of the amplifier, and the tuning circuit controls the gain of the amplifier through tuning current on the output stage of the amplifier. In the tuning circuit, a pair of differential transistors is connected to output stages of a pair of transistors. An input stage and an output stage of the tuning circuit are of a cascode structure so as to improve output impedance of the amplifier and increase the range of common-mode input signals.
Description
Technical field:
The present invention relates to a kind of common operation transconductance amplifier, in particular, the tuning circuit in this operation transconductance amplifier is controlled mutual conductance by the tuning current of resonance-amplifier.
Background technology:
Along with the understanding of people to bandwidth, continuous time filter is used in high definition television system (HDTV) and the high-speed A/D converter (ADC).At a high speed, low distortion, the Linear Tuning wide ranges is as several characteristics of continuous time filter, so that it is used aspect a lot of widely.
A kind of continuous time filter adopts operation transconductance amplifier-capacitive filter (being OTA-C).Broadband OTA-C filter needs suitable broadband operation transconductance amplifier (OTAs), can use bipolar transistor (BJT) technology to realize.Although the BJT technology provides excellent high frequency performance, also there are some technical problems in the design aspect of bipolar OTA amplifier in the broadband, particularly uses the design of BJT transconductance capacitor (gm-c) configuration.In addition, OTAs has some potential advantages in application, for example, because the magnetic resistance of lateral PNP transistor in the low cut-off frequency of signal path and the circuit, so that the BJT technology can't realize.Yet recently, complementary type bipolar transistor BJT provides chance for the flexible design of circuit.
In traditional bipolar OTAs, input signal produces a linear gain response, by adjust bigoted electric current so that the gain of input stage to be set, so that input signal changes in selected input dynamic range.In order to make OTA produce a linear output to larger input signal, the input stage gain of relative high level can be set by increasing bias current.Yet output stage all comprises a large negative feedback emitter resistance usually, reducing the selected output distortion that differential input signal was produced, thereby has reduced the tuning range of OAT.This emitter-base bandgap grading negative feedback has reduced to a large extent the gain of input stage, thereby has limited the scope of OAT input signal by changing bias current.Although the emitter-base bandgap grading negative feedback causes the increase of input impedance and reducing of input capacitance,, except the operating characteristic of expection, OAT can provide a very wide tuning range.
Summary of the invention:
First purpose of the present invention provides a low distortion trsanscondutance amplifier, when input reference signal is very wide, can be adjusted out linear response.
Second purpose of the present invention provides a kind of complementary bipolar technology, and it can make adjustable operation transconductance amplifier have the performance that improves high frequency.
Technical solution of the present invention:
Above-mentioned purpose of the present invention has realized that amplifier can be adjusted to linear gain in selected input reference signal.This amplifier comprises that an input stage is to receive input signal.This amplifier also comprises a tuning circuit, is connected between the input stage and output stage of amplifier, comes the gain of control amplifier by the tuning current of adjusting output stage.
In the tuning circuit, a pair of difference transistor is connected to the output stage of pair of transistor.The input stage of this tuning circuit and output stage are cascodes, to improve the output impedance of amplifier.
Documents, patent of invention: adjustable linear operation transconductance amplifier, application number: 200810130712.X
Description of drawings:
Other purposes of the present invention and function all are apparent, below in conjunction with accompanying drawing claim of the present invention are explained in detail.
Figure 1 shows that traditional Differential OTA, a gain stage configuration that is called as cascodes is arranged in this amplifier.
It is the reduced graph according to amplifier of the present invention shown in Fig. 2 (A).
The block diagram of integrator in the Differential OTA shown in Fig. 2 (B).
It is the more detailed diagram according to trsanscondutance amplifier of the present invention shown in Fig. 3 (A).
Be a common mode feedback loop shown in Fig. 3 (B), export with the common mode of the amplifier shown in the stability diagram 3 (A) by the biasing of control amplifier output stage.
It is the bipolar technology according to trsanscondutance amplifier of the present invention shown in Fig. 4 (A).
A common mode feedback loop shown in Fig. 4 (B), with the common mode output of the BiCMOS amplifier shown in the stability diagram 4 (A).
Shown in Figure 5 is the typical second order filter that is applied in four operation transconductance amplifiers according to of the present invention.
Specific embodiments:
The present invention depends on a tuning circuit, and the bias current by the control amplifier input is to adjust the mutual conductance of operation transconductance amplifier.Although there is negative feedback resistor in input stage,, tuning circuit makes the mutual conductance of amplifier as a favourable function of bias current.In this respect, tuning circuit can be adjusted (that is, adjusting bias current) in very wide dynamic input range, and so that the input stage of amplifier has high input impedance.
As shown in Figure 1, be a traditional Differential OTA (OTA1), comprise the gain stage of a cascodes.By triode Q
AAnd Q
BEmitter-base bandgap grading negative feedback resistor R
AAnd R
BOn difference input voltage (IN+, IN-) convert difference current to so that amplifier work.Can find out current source I
BAnd I
CBe connected respectively to triode Q
CAnd Q
DOn.OTA1 comprises that also a current mirror (comprises Q
E, Q
F, Q
G, Q
H, R
C, R
D), and difference high impedance output node Z
+And Z
-
Because resistance R
A, R
BResistance value and input equipment Q
AAnd Q
BOn mutual conductance (g
m) very little, so the gain of amplifier is by current source I
AArrange.Yet, work as resistance R
A, R
BResistance value very large the time, will in very wide dynamic input range, affect the linear work of amplifier, and need a very high input impedance, the g of input stage
mTo electric current I
ASusceptibility trend towards stablizing.More particularly, Fig. 1 circuit is analyzed, drawn low frequency, the short circuit mutual conductance (G of Fig. 1 amplifier
Mo) expression formula be:
g
MA, g
MF, r π F and r
BAAll be to mix double pole triode Q in the π small-signal equivalent circuit
AAnd Q
CParameter.By formula (3) as can be known, the transadmittance gain of amplifier approximates greatly (1/R
EE), and and I
AValue irrelevant.Very large negative feedback emitter resistance R
EEIn order to prevent that the gain of amplifier is biased I among Fig. 1
AAdjust.As described below, even have a very large negative feedback emitter resistance, the g of the intermediate gain level that exists with tuning form in the trsanscondutance amplifier of the present invention
mCan be controlled by adjusting tuning current.
It is the reduced graph of the amplifier 10 of description according to the present invention shown in Fig. 2 (A).This amplifier comprises an input stage, comprises triode Q in the input stage
1And Q
2, their emitter and emitter resistance R
EEAnd capacitor C
EEBe connected.As mentioned above, negative feedback emitter resistance R
EEIn order to reduce output distortion and input impedance, and increase input impedance.In the amplifier 10 of filter, in the band connection frequency of different filters, capacitor C
EEThe phase response that terminal changes with compensation is provided.Difference input voltage (V
IN+, V
IN-) input to triode Q
1And Q
2, as the transducer of a voltage to electric current.Triode Q
1And Q
2By Current Sources Q
1 ', Q
2 ', Q
B, and I
BSetover.
The grounded base altogether grid common-source stage of this amplifier comprises triode Q
6And Q
7Be total to grid common-source stage triode Q
6And Q
7By current source I
4And I
5Setover triode Q
8To Q
11Pay(useful) load as common grid common-source stage.The bias voltage V of triode
B1And V
B2Provided by the biasing circuit (not shown), this biasing circuit is independent mutually with the variation of process and temperature.
Shown in Fig. 2 (A), this amplifier comprises a tuning circuit again, comprising one by triode Q
1BAnd Q
2BThe intermediate gain level that forms.The triode Q of intermediate gain level
1BAnd Q
2BBe coupling between differential input stage and the cascade output stage.Obviously, the differential pair Q of PMOS
1B, Q
2BWith common base cascade triode Q
8, Q
9, the trsanscondutance amplifier of difference in functionality is by the electric current I that varies in size
TUNInstitute is tuning.Current source 12 provides tuning current I
TUN, flow to triode Q
1BAnd Q
2BThe common emitter node, can find out, current source 14 and 16 accounts for respectively triode Q
1BAnd Q
2BCollector current I
TUNHalf, this can realize by the method that our known conventional transistor base stage is regulated current source.
Current source I
4, I
5, I
10And I
11All be utilized for triode Q
6To Q
9Fixing electric current is provided.According to regulation of the present invention, the triode Q of intermediate gain level
1BAnd Q
2BFor the transadmittance gain of amplifier provides tuning current I
TUNThis is so that amplifier can be by regulating tuning current I
TUNTo receive the input signal of very wide dynamic range.
Suppose very large (for example, 5 a kilo-ohms) negative feedback emitter resistance R
EE, the short circuit mutual conductance G of amplifier shown in Fig. 2 (A)
mCan be expressed as:
Work as I
TUN=0 o'clock, mutual conductance G
monly equal the value G that fixes
Mo
At work, regulate electric current I
TUNThe part amount, flow to respectively each triode Q of intermediate gain level from current source 12
1BAnd Q
2B, as difference input voltage (V
IN+, V
IN-) a function.When difference is inputted so that I
TUNThe whole electric current triode Q that all flows through
1BThe time, according to triode Q
9The KCL equilibrium equation of emitter is as can be known: I
EQ9s+ 2I
TUN=I
TUN+ I
BI
EQ9s=I
B-I
TUN
Give triode Q
9Add an applied forward voltage until I
TUNI can setover
BAs triode Q
9In the time of cut-off, work as I
TUNDuring increase, mutual conductance does not change.Therefore, G
mValue to reach maximum (be 2G
Mo), work as I
TUN=I
BThe time, be equivalent to Linear Tuning scope 2: 1.Work as R
EEReduce I
BDuring increase, G
mMaximum also increase thereupon, work as R
EEIncrease I
BWhen reducing, otherwise then.
Shown in Fig. 2 (B), a block diagram OAT10 represents an integrator.In Fig. 2 (B), tuning current I
TUNBe subjected to harmonic ringing T
CControl.The integrated circuit of the integrated circuit of Fig. 2 (B) and other is in order to realize various types of continuous time of active filter, example as described in Figure 5.Output cascode stage on the capacity load can visually see by the C among Fig. 2 (B)
L1And C
L2Produce, same, this virtual structure is also arranged among Fig. 2 (A).
Shown in Fig. 3 (A), it is the more detailed diagram of the trsanscondutance amplifier 20 of description according to the present invention.By Fig. 3 (A) as can be known, Q
1BAnd Q
2BSetovered by the tuning current that tuning circuit produced, and regulate current source 22, this tuning circuit is by triode Q
3B, Q
19, Q
22To Q
25Consist of.In Fig. 3 (A), triode Q
22To Q
25With active load triode Q
8To Q
11Has the first conduction type (being NPN), PNP triode Q
19, Q
3BPNP triode Q with the intermediate gain level
1BAnd Q
2BHas on the contrary conduction type.
The stability of amplifier output node 26 and 28 common mode output is by Q on the control common mode feedback loop 24
4And Q
5Bias voltage realize, draw among Fig. 3 (B).In Fig. 3 (B), common mode feedback loop 24 comprises NPN double pole triode Q
14To Q
17, PNP double pole triode Q
18-Q
19Current source I
12And I
13Be differential pair Q
14-Q
15And Q
16-Q
17Bias current is provided.Two differential pair Q
14-Q
15And Q
16-Q
17Difference current inflow current mirror load Q all
18-Q
19, from Q
18Flow out, with control Q
4-Q
5Biasing.Resistance R '
EEReduce the load on common mode feedback loop 24 output contacts 26 and 28 as far as possible, and enlarge the scope that common mode feedback loop is operated in linear zone.When the swing of the signal amplitude peak on output contact 26 and 28, be applied to the common mode reference voltage V of feedback loop 24
CMTo be cleared (V
CM=0).Shunting capacitance C '
EEBe added in differential pair Q
14-Q
15And Q
16-Q
17Between, for common mode feedback loop 24 provides stable high frequency.
Shown in Fig. 4 (A), a complementary bipolar technology (being BiCMOS) that is used on the trsanscondutance amplifier 40 of describing according to the present invention has been described.Amplifier 40 is improvement of amplifier 30, can utilize MOS transistor to realize differential input stage and active load.For example, differential input stage includes the first and second nmos pass transistor M1 and M2 that current source 42 and 44 is setovered.Active pull-up R
SSWith active capacitor C
SParallel connection has source terminal to be connected with the terminal of the first and second nmos pass transistor M1 and M2.
The intermediate gain level comprises a pair of PNP double pole triode, is defined as Q among Fig. 4 (A)
M1And Q
M2Shown in Fig. 4 (A), tuning current I '
TUNBy the triode Q of current source 52 by the intermediate gain level
M1And Q
M2Provide.Electric current I
TUNThe/2nd, by current source 54 and the 56 triode Q by the intermediate gain level
M1And Q
M2Provide.In output stage, a pair of PMOS triode M4 and M5 are altogether grid common source PNP double pole triode Q ' of common base
6And Q '
7Bias current is provided.Cascode driving N MOS active load transistor M8 and the M9 of output stage are setovered by current source 60 and 62 respectively.Be attached to the common mode component V that door bias voltage on PMOS transistor M4 and the M5 can regulated output voltage by common mode feedback loop (CMF) 66
O+And V
O-, this can make bigoted electric current offer the transistor Q ' of common grid common-source stage
6And Q '
7
Shown in Fig. 4 (B), common mode feedback loop (CMF) 66 comprises a PMOS transistor M17, and its drain terminal is connected with the door of PMOS transistor M4 and M5.PMOS transistor 17 and 16 consists of a current mirror, and its drain electrode is coupled to M12-M13 and M14-M15 with the nmos differential transistor.Nmos differential is to being setovered by current source 70 and 72.Shown in Fig. 4 (B), resistance R
S1, R
S2And capacitor C
S1, C
S2Be connected in parallel nmos differential between.The stability in CMF loop is the output node 78 process capacitor C with the CMF of difference ground connection
L1And C
L2Realization is brought in the input that is connected to CMF loop 66.
Shown in Figure 5 is a typical second order filter 80 that comprises four operation transconductance amplifiers (OATs) 81-84 of the requirement according to the present invention.Second order filter 80 can be by the use of equivalence, for example, and the RLC band pass filter.These effects are easy to just can understand, OAT is used as active filter continuous time (for example, Chebyshev and elliptic filter) among the present invention.Can find out and be OAT81 loading input voltage (+V
i,-V
i), produce response output (+V at OAT84
O,-V
O).The value of capacitor C 1 and C2, and tuning current control signal T
CFor electric current I is set
TUNSize, to reach the response characteristic of ideal filter.
Although the present invention is with reference to the imbody of some inventions, this is not subjected to restriction of the present invention.Scope of invention and spirit are not run counter in various modifications technically, and this is defined by claim.
Claims (9)
1. the mutual conductance of tuned amplifier has high linearity, it is characterized in that: amplifier comprises an input stage and an output stage, input stage is to receive input signal, tuning circuit comprises: the differential gain level is regulated the transadmittance gain of amplifier, it is changed in default tuning range, and tuning current is responded, and the differential gain level is connected between the input stage and output stage of amplifier; The output stage of amplifier comprises the first and second tuning circuit transistors, and they are connected in parallel, and is called as the differential gain level.
2. the mutual conductance of tuned amplifier according to claim 1 has high linearity, it is characterized in that: in the tuning circuit, the first and second tuning circuit transistors comprise a pair of bipolar transistor on the common-base configuration that is connected to; Comprise the 3rd transistor and the 4th transistor in the differential gain level, the 3rd transistorized output node is coupled on the first tuning circuit transistor, and the 4th transistors couple is to the second tune circuit transistor.
3. the mutual conductance of tuned amplifier according to claim 1 has high linearity, and it is characterized in that: amplifier comprises: an input stage is converted to input current with the difference input voltage; An output circuit is to receive input current; The differential gain level comprises a pair of difference transistor, and they are connected to the input stage of output circuit; The terminal of differential gain level provides the adjusting electric current, in default tuning range the different transadmittance gain of amplifier is set, according to the variation of tuning current, when tuning current hour, the transadmittance gain of amplifier is equivalent to a nominal mutual conductance; When tuning current changes in default tuning range, the electric current in the output circuit will respond to it.
4. the mutual conductance of tuned amplifier according to claim 3 has high linearity, it is characterized in that: the input stage of amplifier comprises a pair of difference transistor, and output circuit comprises the first and second bipolar transistors that are connected to a common-base configuration; This operation transconductance amplifier also comprises a common mode feedback loop that is coupled to output circuit.
5. the mutual conductance of tuned amplifier according to claim 1 has high linearity, and it is characterized in that: operation transconductance amplifier comprises: input stage comprises the difference transistor of a pair of the first conduction type; Output stage is connected to input stage, and it comprises the output transistor of pair of conductive type and the first conductivity type opposite; Tuning circuit is connected between the input stage and output stage of amplifier, according to the variation of tuning current, and the transadmittance gain of resonance-amplifier in default tuning range, tuning circuit comprises the tuning transistor of pair of conductive type and the first conductivity type opposite.
6. the mutual conductance of tuned amplifier according to claim 1 has high linearity, it is characterized in that: amplifier comprises input stage and output stage, and input stage is to receive input signal; A negative-feedback emitter resistor is coupled to differential input stage; An adjustable current source produces tuning current, and tuning control signal is responded; Tuning circuit comprises a differential gain level, and the linear adjustable of amplifier transadmittance gain is a function of tuning control signal, and this differential gain level is connected between the input stage and output stage of amplifier.
7. the mutual conductance of tuned amplifier according to claim 6 has high linearity, it is characterized in that: the control terminal of the first transistor is connected with the first lead-out terminal of input stage in the differential gain level, and the control terminal of transistor seconds is connected with the second lead-out terminal of input stage.
8. the mutual conductance of tuned amplifier according to claim 1 has high linearity, it is characterized in that: common source and common grid amplifier comprises that an input stage is to receive input signal, an output stage, an emitter resistance that is coupled to input stage, the selection of this emitter resistance are wanted so that amplifier has very large linear transconductance gain; Tuning circuit comprises: the differential gain level is regulated the transadmittance gain of amplifier, it is changed in default tuning range, and tuning current is responded, and the differential gain level is connected between the input stage and output stage of amplifier.
9. the mutual conductance of tuned amplifier according to claim 1 has high linearity, it is characterized in that: comprise in the amplifier that a differential input stage is to receive differential input signal, a difference output stage, tuning circuit comprises: the differential gain level is regulated the linear transconductance gain of amplifier, it is changed in default tuning range, and tuning current is responded, and the differential gain level is connected between the differential input stage and difference output stage of amplifier.
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| CN105375929A (en) * | 2014-08-25 | 2016-03-02 | 联发科技股份有限公司 | Resonating device |
| CN105743448A (en) * | 2016-01-31 | 2016-07-06 | 天津大学 | Adjustable high linearity operational transconductance amplifier structure for Gm-C filter |
| CN106100598A (en) * | 2016-05-31 | 2016-11-09 | 深圳市海思半导体有限公司 | A kind of variable gain amplifier |
| CN106330120A (en) * | 2016-08-26 | 2017-01-11 | 浙江芯迈电子科技有限公司 | Transconductance operational amplifying circuit with high accuracy and high linearity |
| CN106330119A (en) * | 2016-08-26 | 2017-01-11 | 浙江芯迈电子科技有限公司 | Transconductance operational amplifying circuit with low temperature drift coefficient |
| CN107425817A (en) * | 2016-05-24 | 2017-12-01 | 弗兰克公司 | Trsanscondutance amplifier with low distortion |
| CN107491132A (en) * | 2016-06-12 | 2017-12-19 | 中芯国际集成电路制造(上海)有限公司 | Voltage-current converter circuit |
| WO2018140609A1 (en) * | 2017-01-26 | 2018-08-02 | Analog Devices, Inc. | Bias modulation active linearization for broadband amplifiers |
| US10177717B2 (en) | 2016-03-14 | 2019-01-08 | Analog Devices, Inc. | Active linearization for broadband amplifiers |
| CN110495095A (en) * | 2017-05-02 | 2019-11-22 | 微芯片技术股份有限公司 | The method of gain error in regulation meter amplifier |
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| US10848109B2 (en) | 2017-01-26 | 2020-11-24 | Analog Devices, Inc. | Bias modulation active linearization for broadband amplifiers |
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| CN105375929A (en) * | 2014-08-25 | 2016-03-02 | 联发科技股份有限公司 | Resonating device |
| CN105375929B (en) * | 2014-08-25 | 2019-05-31 | 联发科技股份有限公司 | Resonant device |
| CN105743448A (en) * | 2016-01-31 | 2016-07-06 | 天津大学 | Adjustable high linearity operational transconductance amplifier structure for Gm-C filter |
| CN105743448B (en) * | 2016-01-31 | 2018-10-30 | 天津大学 | A kind of adjustable high linearity trsanscondutance amplifier structure for Gm-C filters |
| US10177717B2 (en) | 2016-03-14 | 2019-01-08 | Analog Devices, Inc. | Active linearization for broadband amplifiers |
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| CN106100598A (en) * | 2016-05-31 | 2016-11-09 | 深圳市海思半导体有限公司 | A kind of variable gain amplifier |
| CN106100598B (en) * | 2016-05-31 | 2019-02-05 | 深圳市海思半导体有限公司 | A kind of variable gain amplifier |
| CN107491132B (en) * | 2016-06-12 | 2019-11-05 | 中芯国际集成电路制造(上海)有限公司 | Voltage-current converter circuit |
| CN107491132A (en) * | 2016-06-12 | 2017-12-19 | 中芯国际集成电路制造(上海)有限公司 | Voltage-current converter circuit |
| CN106330119A (en) * | 2016-08-26 | 2017-01-11 | 浙江芯迈电子科技有限公司 | Transconductance operational amplifying circuit with low temperature drift coefficient |
| CN106330119B (en) * | 2016-08-26 | 2018-12-28 | 浙江芯迈电子科技有限公司 | A kind of spaning waveguide operational amplifier circuit with low excursion with temperature coefficient |
| CN106330120A (en) * | 2016-08-26 | 2017-01-11 | 浙江芯迈电子科技有限公司 | Transconductance operational amplifying circuit with high accuracy and high linearity |
| CN106330120B (en) * | 2016-08-26 | 2018-12-28 | 浙江芯迈电子科技有限公司 | A kind of spaning waveguide operational amplifier circuit with high-precision and high linearity |
| US10848109B2 (en) | 2017-01-26 | 2020-11-24 | Analog Devices, Inc. | Bias modulation active linearization for broadband amplifiers |
| US10389312B2 (en) | 2017-01-26 | 2019-08-20 | Analog Devices, Inc. | Bias modulation active linearization for broadband amplifiers |
| WO2018140609A1 (en) * | 2017-01-26 | 2018-08-02 | Analog Devices, Inc. | Bias modulation active linearization for broadband amplifiers |
| CN110662977A (en) * | 2017-03-27 | 2020-01-07 | 波导公司 | Integrated sensor |
| CN110495095A (en) * | 2017-05-02 | 2019-11-22 | 微芯片技术股份有限公司 | The method of gain error in regulation meter amplifier |
| CN110495095B (en) * | 2017-05-02 | 2023-07-28 | 微芯片技术股份有限公司 | Method for adjusting gain error in instrumentation amplifier |
| CN111435828A (en) * | 2019-01-11 | 2020-07-21 | 模拟设备国际无限公司 | Amplifier with reduced power consumption and increased slew rate |
| CN111435828B (en) * | 2019-01-11 | 2023-08-11 | 亚德诺半导体国际无限责任公司 | Amplifier with reduced power consumption and increased slew rate |
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Application publication date: 20130925 |