CN103311386B - A kind of preparation method of the graphical sapphire substrate avoiding aliasing - Google Patents
A kind of preparation method of the graphical sapphire substrate avoiding aliasing Download PDFInfo
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Abstract
The present invention provides the preparation method of a kind of graphical sapphire substrate avoiding aliasing, including following several steps: step A: magnetron sputtering aluminium film on a face of sapphire substrate；Step B: apply photoresist film on aluminium film, dries;Step C: carry out laser interference exposure, development, it is thus achieved that photoetching offset plate figure；Step D: graphical photoresist is as mask on aluminium film, uses reactive ion etching aluminium film and removes photoresist, and obtains the patterned metal aluminum film of aluminium film boss on sapphire substrate；Step E: carry out Low Temperature Heat Treatment, makes that patterned metal aluminum film is fully oxidized becomes graphical polymorph A l2O3Film;Step F: the graphical polymorph A l that will obtain2O3Film carries out high-temperature heat treatment, makes graphical polymorph A l2O3Film is fully converted to graphical monocrystalline Al2O3Film, i.e. obtains graphical sapphire substrate.The preparation method of the graphical sapphire substrate of the present invention, simple for process, low cost, area is big.
Description
Technical field
The present invention relates to the preparation method of a kind of graphical sapphire substrate, especially relate to a kind of low one-tenth
Originally, the large-area preparation method of the graphical sapphire substrate of epitaxial growth at nitride.
Background technology
The most highlighted high power nitride light emitting diode (LED) is paid attention to deeply, and it is widely used in
Traffic light, LCD backlight, solid-state illumination, full color display etc..These commercial product requirements
LED has excellent performance in terms of brightness and luminous efficiency.Sapphire has chemical and physical features
The advantage such as stable, light transmission is good, cost is suitable, is therefore widely used for nitride epitaxial substrate.But
Due to the Sapphire Substrate of nitride epitaxial thin film Yu bottom exist greatest differences lattice constant mismatch and
Coefficient of thermal expansion mismatch, so utilizing hydride gas-phase epitaxy (HVPE), metal-organic chemical vapor
Deposit (MOCVD), the nitride epitaxial thin film of beam epitaxy (MBE) the homepitaxy growth divided, can be at nitrogen
Compound epitaxial film produces high threading dislocation density, and this high threading dislocation density will affect epitaxial film
Optically and electrically characteristic, cause the reliability of device and internal quantum efficiency to reduce.Use sapphire figure
Shape substrate technology can be alleviated owing to the Sapphire Substrate of nitride epitaxial thin film Yu bottom exists huge difference
Different lattice constant mismatch and coefficient of thermal expansion mismatch and the stress that causes, make stress effectively be relaxed
Henan, can effectively reduce in nitride epitaxial thin film threading dislocation density.Graphic sapphire serves as a contrast
The end, it is different from common plain film Sapphire Substrate.It is to make on the smooth sapphire substrate of extension level
Periodically rise and fall figure.Graphical sapphire substrate is mainly used in that quasiconductor is blue, green, white light
On the epitaxial chip of LED, LED chip brightness can be increased substantially, increase substantially the merit of chip
Rate and radiating efficiency, just becoming the main flow substrate of semiconductor lighting industry.Sapphire Substrate is closed
The graphical pretreatment of reason, it is achieved its laterally overgrown, and then reducing it, to expand to MQW raw
Defect in long layer, thus improve the luminous efficiency of LED component, improve simultaneously and light mode, be high
The development of brightness LED field and the inexorable trend of research, have important theory and real value.
At present, the general method using etching sapphire substrate prepares sapphire pattern substrate, and etching can
It is divided into wet etching and dry etching.
Wet etching is first to prepare one layer of mask layer, as required etch away sections on sapphire substrate
Mask layer, recycles suitable chemical reagent and is first decomposed by the container portion not covered by mask layer, so
The compound of rear formation solubility is to reach the purpose removed.This lithographic technique is mainly by etching
Liquid and the chemical reaction of wafer material, therefore can be by the choosing of chemical reagent, proportioning and temperature
Control reach suitable etch rate and good etching selection ratio.The advantage of wet etching is journey
Sequence is single, and equipment is simple, and low cost, production efficiency is high, and has good etching selection
Ratio.But, wet etching is the most isotropic, same what litho pattern was transferred on wafer
Time, etching is not only longitudinally carried out, also can be towards laterally carrying out.So can make aliasing, even make
Live width distortion.
Etching for sapphire pattern substrate uses dry etching technology more in the world, but due to
The high rigidity of sapphire substrate and resistance to strong acid characteristic cause it to be often faced with cutting in element manufacturing, throw
The difficulty such as light and device isolation, the most progressively uses ion beam etching (IBE), Laser-assisted chemical rotten
The technology such as erosion (LAE), ion implanting chemical attack and inductively coupled plasma (ICP) replace machine
Tool process technology, wherein ICP dry etching technology has with it and can control plasma density respectively
And ion bombardment energy, the advantage such as Automatic Network Matching when being suitable to glow discharge and use in a large number.But,
Dry etching easily to sapphire substrate surface, particularly mesa edge position, cause certain pollution
And damage, it is unfavorable for the further raising of epitaxial layer crystal mass.
Due to the optical characteristics that projection optical system is intrinsic, existing technique and equipment how is utilized to carry out point
Resolution and the selection of depth of focus the two contradiction parameter, become one that optical lithography techniques faces and mainly ask
Topic, and cause the problems such as new light sources, photoresist, mask, technique, lens material and design
Need to solve.More than ten years in past, in terms of shortening exposure wavelength, increasing optical system numerical aperture
Effort, adds phase shifting mask off-axis illumination, proximity correction etc. and strengthens photoetching resolution technology,
Either all achieve good achievement in raising resolution and increasing depth of focus two aspect.But owing to dividing
Distinguish the contradiction between power and depth of focus so that photoetching technique exists the limit.The photoetching focused on based on particle,
Either ion beam lithography or beamwriter lithography, although having sufficiently high resolution, and passes through
Travelling workpiece platform, can obtain relatively large exposure field, but film speed limits slowly
Application during manufacturing low-costly and in high volume.
Summary of the invention
In order to solve above technical problem, the present invention provides one can avoid aliasing and not damage indigo plant
The low cost of sapphire substrates, the preparation method of large-area graphs Sapphire Substrate, including the most several
Step:
Step A: magnetron sputtering aluminium film on a face of sapphire substrate；
Step B: apply photoresist film on aluminium film, dries;
Step C: carry out laser interference exposure, development, it is thus achieved that photoetching offset plate figure；
Step D: graphical photoresist is as mask on aluminium film, uses reactive ion etching metal
Aluminum film and removing photoresist, obtains the patterned metal aluminum film of aluminium film boss on sapphire substrate；
Step E: carry out Low Temperature Heat Treatment, makes that patterned metal aluminum film is fully oxidized becomes graphical polycrystalline
Al2O3Film;
Step F: the graphical polymorph A l that will obtain2O3Film carries out high-temperature heat treatment, makes graphical polycrystalline
Al2O3Film is fully converted to graphical monocrystalline Al2O3Film, i.e. obtains graphical sapphire substrate.
The present invention uses above technical scheme, has an advantage in that, uses laser interference lithography, and laser is done
Relating to photoetching technique is to utilize interference of light characteristic, uses different light beam compound modes, regulates interference
Light intensity distributions in Chang, and use photoresist light intensity distributions to be recorded, thus preparation is published picture
Shape photoresist.Laser interference photolithography technology need not use expensive projection optical system, system
Clear aperature determines exposure field region area, and therefore laser interference photolithography technology is particularly suitable for applications in greatly
Figure is prepared in areal extent.Laser interference photolithography technology belongs to a kind of emerging, cheap photoetching technique,
And potential up to λ/2-λ/4 of resolution, so laser interference photolithography technology is to existing optics light
Supplementing of lithography, has broad application prospects.
Due to the optical characteristics that projection optical system is intrinsic, existing technique and equipment how is utilized to carry out point
Resolution and the selection of depth of focus the two contradiction parameter, become one that optical lithography techniques faces and mainly ask
Topic, and cause the problems such as new light sources, photoresist, mask, technique, lens material and design
Need to solve.More than ten years in past, in terms of shortening exposure wavelength, increasing optical system numerical aperture
Effort, adds phase shifting mask off-axis illumination, proximity correction etc. and strengthens photoetching resolution technology,
Either all achieve good achievement in raising resolution and increasing depth of focus two aspect.But owing to dividing
Distinguish the contradiction between power and depth of focus so that photoetching technique exists the limit.The photoetching focused on based on particle,
Either ion beam lithography or beamwriter lithography, although having sufficiently high resolution, and passes through
Travelling workpiece platform, can obtain relatively large exposure field, but film speed limits slowly
Application during manufacturing low-costly and in high volume.
Laser interference photolithography technology has the advantage that laser interference lithographic system cheap and simple, is not required to
Wanting complicated curved optical device, the big visual field of single exposure easily realizes.Laser interference photolithography technology can
To use existing exposure light source and ripe photoresist process, without using expensive light
Carve imaging len, it is thus achieved that high-resolution, unlimited depth of focus, large area lithography become a reality.Laser interference
Carve microelectronic component and the opto-electronic device being particularly suited for manufacturing cycle structure graph.
Preferably, the thickness of described aluminium film is 150nm～200nm.
Preferably, the photoetching technique in described step B selects laser interference lithography.
Preferably, in described step B, photoresist uses AZ1500 photoresist.
Preferably, in described step B, the thickness of photoresist film is 150nm～250nm.
Preferably, in described step E, the temperature of Low Temperature Heat Treatment is 400 DEG C～600 DEG C.
Preferably, in described step F, the temperature of high-temperature heat treatment is 950 DEG C～1250 DEG C.
The inventive method, compared with wet etching sapphire pattern substrate, overcomes isotropic etching and draws
The problem that the aliasing risen even makes live width distortion；Compared with dry etching sapphire pattern substrate,
Overcome sapphire substrate surface, pollution that particularly mesa edge position is caused and damage；With from
Son bundle photoetching or beamwriter lithography are compared, etching system cheap and simple, it is not necessary to complicated curved optic
Element, the big visual field of single exposure easily realizes.Use existing exposure light source and ripe photoresist work
Skill, it is not necessary to use expensive optical patterning lens, it is thus achieved that high-resolution, unlimited depth of focus, big face
Long-pending photoetching becomes a reality.
The invention has the beneficial effects as follows: the preparation method of the graphical sapphire substrate of the present invention, different
Used Sapphire Substrate is directly carried out dry etching or wet etching at present the most usual,
But first use laser interference lithography and reactive ion etching, sapphire substrate is formed graphical aluminum
Film, then makes aluminum film carry out solid state reaction by the way of two-step thermal processing, ultimately generates aluminium oxide list
Brilliant thin film, it is hereby achieved that the graphical sapphire substrate for nitride epitaxial growth of optimum,
Simple for process, low cost, area is big.
Accompanying drawing explanation
Fig. 1 is the technical process schematic diagram that the present invention prepares graphical sapphire substrate.
Fig. 2 is the SEM figure of graphical photoresist/aluminium film in the present invention.
Fig. 3 is that the patterned metal aluminum film of Fig. 2 is through 450 DEG C of polymorph A l being thermally treated resulting in for 24 hours2O3
The SEM figure of film.
Fig. 4 is the polymorph A l of Fig. 32O3Film again through 1000 DEG C of 24 hours solid state reactions obtain graphical
The SEM figure of Sapphire Substrate.
Fig. 5 is the polymorph A l of Fig. 32O3Film again through 1200 DEG C of 24 hours solid state reactions obtain graphical
The SEM figure of Sapphire Substrate.
Fig. 6 is the XRD-Φ scanning result of graphical sapphire substrate (11-23).
Fig. 7 is the XRD-ω/2 θ scanning result of graphical sapphire substrate (0006).
Fig. 8 is the XRD-ω/2 θ scanning result of the most patterned sapphire substrate (0006).
Detailed description of the invention
Below in conjunction with the accompanying drawings, the preferably embodiment of the present invention is described in further detail:
As it is shown in figure 1, the preparation process of the graphical sapphire substrate of the present invention, specifically include
The following step:
Step S1: employing magnetron sputtering technique magnetron sputtering thickness on a face of sapphire substrate is
The aluminium film of 150nm～200nm.
Step S2: applying thickness on aluminium film is 200nm photoresist film, dries, then enters
Row laser interference exposure, development, it is thus achieved that photoetching offset plate figure, photoresist can be selected for AZ1500 photoresist.
Step S3: graphical photoresist is as mask on aluminium film, uses reactive ion etching metal
Aluminum film and removing photoresist, obtains the patterned metal aluminum film of aluminium film boss on sapphire substrate；
Step S4: carry out Low Temperature Heat Treatment at 400 DEG C～600 DEG C, makes patterned metal aluminum film fill
Divide and be oxidized into graphical polymorph A l2O3Film.
Step S5: be then placed in and carry out high-temperature heat treatment at 950 DEG C～1250 DEG C and realize solid state reaction
Homoepitaxy, makes graphical polymorph A l2O3Film is fully converted to graphical monocrystalline Al2O3Film, obtains
It is applicable to the graphical sapphire substrate of nitride epitaxial growth.
Embodiment 1
The method preparation carried out in the following order serves as a contrast for the graphic sapphire of nitride epitaxial growth
The end:
(1), splash-proofing sputtering metal aluminum film: use magnetically controlled DC sputtering technology magnetic on one face of sapphire substrate
Control sputters about 200nm aluminium film.
(2), laser interference lithography: (1) sputtered in step and revolved on the Sapphire Substrate aluminum film of aluminium film
Being coated with AZ1500 photoresist, thickness is about 200nm, whirl coating rotating speed 2000r/min, 110 DEG C of drying
2min；Then carrying out double excitation and interfere double exposure, laser wavelength lambda is 325nm, and exposure figure sets
Being calculated as period circular, the exposure figure cycle is 1 μm, and two bundle laser enter with the angle symmetrical relative to z-axis
Penetrate ± θ is 9.35 °, carries out photoresist exposing for the first time, time of exposure is 8min, then will
Substrate half-twist, with the most identical exposure parameter, carries out second time and exposes photoresist.?
Development 20s, N in AZ351B (diluted1:4)2Dry up, it is thus achieved that laser interference lithography glue pattern.
(4), reactive ion etching aluminium film and removing photoresist: with figure on step splash-proofing sputtering metal aluminum film (3)
Change photoresist is mask, uses reactive ion etching aluminium film, and RF power is 600W, and direct current is inclined
Pressure-200V, cavity pressure is 7mT, BCl3The flow that flow is 100sccm, Cl2 be 25sccm,
Etch period is 90s.Employing reactive ion etching is removed photoresist, and RF power is 50W, and cavity pressure is
100mT, O2Flow be 200sccm, etch period is 120s, makes photoresist remove completely,
Obtaining patterned metal aluminum film, aluminum film pattern is shaped as cylindricality, dimension of picture 600nm, and the cycle is
1 μm, height is about 200nm.As in figure 2 it is shown, be the graphical photoresist/aluminium film obtained
SEM figure.
(5), Low Temperature Heat Treatment: the step sample with patterned metal aluminum film (4) is put into aluminium oxide
Crucible, carries out 450 DEG C in the lehr and within 24 hours, processes and make that aluminium film is fully oxidized becomes polycrystalline
Al2O3Film.As it is shown on figure 3, be the graphical polymorph A l through 450 DEG C of 24 hours heat treatments2O3Film
SEM figure.
, high-temperature heat treatment: complete step (5) on the basis of carry out 1000 DEG C of 24 hours heat treatments,
Realize solid state reaction homoepitaxy, make graphical polymorph A l2O3Film is fully converted to graphical monocrystalline
Al2O3Film, completes the preparation of the graphical sapphire substrate for nitride epitaxial growth.Such as Fig. 4
Shown in, it is that laser interference patterned metal name aluminum film is consolidated through 450 DEG C for 24 hours and 1000 DEG C for 24 hours
The SEM figure of graphical sapphire substrate prepared by phase reaction, as can be seen from the figure figure is the completeest
Whole without deformation.
Embodiment 2
The method preparation carried out in the following order serves as a contrast for the graphic sapphire of nitride epitaxial growth
The end:
(1), splash-proofing sputtering metal aluminum film: use magnetically controlled DC sputtering technology magnetic on one face of sapphire substrate
Control sputters about 200nm aluminium film.
(2), laser interference lithography: (1) sputtered in step and revolved on the Sapphire Substrate aluminum film of aluminium film
Being coated with AZ1500 photoresist, thickness is about 200nm, whirl coating rotating speed 2000r/min, 110 DEG C of drying
2min；Then carrying out double excitation and interfere double exposure, laser wavelength lambda is 325nm, and exposure figure sets
Being calculated as period circular, the exposure figure cycle is 1 μm, and two bundle laser enter with the angle symmetrical relative to z-axis
Penetrate ± θ is 9.35 °, carries out photoresist exposing for the first time, time of exposure is 8min, then will
Substrate half-twist, with the most identical exposure parameter, carries out second time and exposes photoresist.?
Development 20s, N in AZ351B (diluted1:4)2Dry up, it is thus achieved that laser interference lithography glue pattern.
(4), reactive ion etching aluminium film and removing photoresist: with figure on step splash-proofing sputtering metal aluminum film (3)
Change photoresist is mask, uses reactive ion etching aluminium film, and RF power is 600W, and direct current is inclined
Pressure-200V, cavity pressure is 7mT, BCl3Flow be 100sccm, Cl2Flow be 25sccm,
Etch period is 90s.Employing reactive ion etching is removed photoresist, and RF power is 50W, and cavity pressure is
100mT, O2Flow be 200sccm, etch period is 120s, makes photoresist remove completely,
Obtaining patterned metal aluminum film, aluminum film pattern is shaped as cylindricality, dimension of picture 600nm, and the cycle is
1 μm, height is about 200nm.As in figure 2 it is shown, be the graphical photoresist/aluminium film obtained
SEM figure.
(5), Low Temperature Heat Treatment: the step sample with patterned metal aluminum film (4) is put into aluminium oxide
Crucible, carries out 500 DEG C in the lehr and within 24 hours, processes and make that aluminium film is fully oxidized becomes polycrystalline
Al2O3Film.
, high-temperature heat treatment: complete step (5) on the basis of carry out 1200 DEG C of 24 hours heat treatments,
Realize solid state reaction homoepitaxy, make graphical polymorph A l2O3Film is fully converted to graphical monocrystalline
Al2O3Film, completes the preparation of the graphical sapphire substrate for nitride epitaxial growth.Such as Fig. 5
Shown in, it is that laser interference patterned metal name aluminum film is consolidated through 500 DEG C for 24 hours and 1200 DEG C for 24 hours
The SEM figure of graphical sapphire substrate prepared by phase reaction, as can be seen from the figure figure is the completeest
Whole without deformation.
Embodiment 3
Crystal structure is tested
Use high resolution X-ray diffractometry that the graphical sapphire substrate of preparation is carried out crystal structure
Test.Fig. 6 is that (11-23 is crystal face mark for the scanning result of graphical sapphire substrate (11-23)
Note), Fig. 7 is that (0006 is for the XRD-ω/2 θ scanning result of graphical sapphire substrate (0006)
Crystal face labelling), result shows the diffraction maximum halfwidth of graphical sapphire substrate (0006)
FWHM=0.0101°.Fig. 8 is XRD-ω/2 θ of the most patterned sapphire substrate (0006)
Scanning result, result shows the diffraction maximum halfwidth of non-graphic sapphire substrate (0006)
FWHM=0.0133°.The XRD-Φ scanning knot of the graphical sapphire substrate (11-23) of Fig. 6
Really, the crystal face angle of (11-23) and (0006)Sample is made to make around surface normal n
0～360 ° of scanning.Occur in that 6 equally spaced diffraction maximums in figure 6, between adjacent diffraction maximum
Differ 60 °, show that graphical sapphire substrate is hexagonal crystal system, and consistent with substrate orientation, and
And graphical sapphire substrate more non-graphic sapphire substrate crystalline Quality advance, it is achieved thereby that system
It is ready for use on the graphical sapphire substrate of nitride epitaxial growth.
Embodiment 4
Laser interference lithography of the present invention prepares graphical sapphire substrate: prepare 2 cun of samples of diameter, uses
Time 8 minutes, laser interference lithography price is 800 yuan/sheet.And original beamwriter lithography prepares figure
Change Sapphire Substrate, prepare the area of 100 μ m 100 μm, 30 minutes used times, beamwriter lithography
Price is 1600 yuan/hour.
Above content is that to combine concrete preferred implementation made for the present invention the most specifically
Bright, it is impossible to assert the present invention be embodied as be confined to these explanations.For technology belonging to the present invention
For the those of ordinary skill in field, without departing from the inventive concept of the premise, it is also possible to if making
Dry simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (2)
1. the preparation method of a graphical sapphire substrate, it is characterised in that include following several step:
(1), splash-proofing sputtering metal aluminum film: use magnetically controlled DC sputtering technology magnetron sputtering 200nm aluminium film on one face of sapphire substrate；
(2), laser interference lithography: (1) having sputtered spin coating AZ1500 photoresist on the Sapphire Substrate aluminum film of aluminium film in step, thickness is 200nm, whirl coating rotating speed 2000 r/min, dries 2min for 110 DEG C；Then carry out double excitation and interfere double exposure, laser wavelength lambda is 325nm, and exposure figure is designed as period circular, and the exposure figure cycle is 1 m, two bundle laser are 9.35 ° with angle incidence ± θ symmetrical relative to z-axis, carrying out photoresist exposing for the first time, time of exposure is 8min, then by substrate half-twist, with the exposure parameter identical with first time, photoresist carries out second time expose, development 20s, N in AZ 351B (diluted 1:4)2Dry up, it is thus achieved that laser interference lithography glue pattern；
(3), reactive ion etching aluminium film and removing photoresist: graphical photoresist is as mask on step splash-proofing sputtering metal aluminum film (2), uses reactive ion etching aluminium film, and RF power is 600W, Dc bias-200V, and cavity pressure is 7mT, BCl3Flow be 100sccm, Cl2Flow be 25sccm, etch period is 90s, use reactive ion etching remove photoresist, RF power is 50W, and cavity pressure is 100mT, O2Flow be 200sccm, etch period is 120s, makes photoresist remove completely, it is thus achieved that patterned metal aluminum film, and aluminum film pattern is shaped as cylindricality, dimension of picture 600nm, and the cycle is 1 m, height be 200nm；
(4), Low Temperature Heat Treatment: the step sample with patterned metal aluminum film (3) is put into alumina crucible, carries out in the lehr 450 DEG C, 24 hours processing and make that aluminium film is fully oxidized becomes polymorph A l2O3Film；
(5), high-temperature heat treatment: complete step (4) on the basis of carry out 1000 DEG C of 24 hours heat treatments, it is achieved solid state reaction homoepitaxy, make graphical polymorph A l2O3Film is fully converted to graphical monocrystalline Al2O3Film, completes the preparation of the graphical sapphire substrate for nitride epitaxial growth.
2. the preparation method of a graphical sapphire substrate, it is characterised in that include following several step:
(1), splash-proofing sputtering metal aluminum film: use magnetically controlled DC sputtering technology magnetron sputtering 200nm aluminium film on one face of sapphire substrate；
(2), laser interference lithography: (1) having sputtered spin coating AZ1500 photoresist on the Sapphire Substrate aluminum film of aluminium film in step, thickness is 200nm, whirl coating rotating speed 2000 r/min, dries 2min for 110 DEG C；Then carry out double excitation and interfere double exposure, laser wavelength lambda is 325nm, exposure figure is designed as period circular, the exposure figure cycle is 1 m, and two bundle laser are 9.35 ° with angle incidence ± θ symmetrical relative to z-axis, carries out photoresist exposing for the first time, time of exposure is 8min, then by substrate half-twist, with the exposure parameter identical with first time, photoresist is carried out second time and exposes；Development 20s, N in AZ 351B (diluted 1:4)2Dry up, it is thus achieved that laser interference lithography glue pattern；
(3), reactive ion etching aluminium film and removing photoresist: graphical photoresist is as mask on step splash-proofing sputtering metal aluminum film (2), uses reactive ion etching aluminium film, and RF power is 600W, Dc bias-200V, and cavity pressure is 7mT, BCl3Flow be 100sccm, Cl2Flow be 25sccm, etch period is 90s；Employing reactive ion etching is removed photoresist, and RF power is 50W, and cavity pressure is 100mT, O2Flow be 200sccm, etch period is 120s, makes photoresist remove completely, it is thus achieved that patterned metal aluminum film, and aluminum film pattern is shaped as cylindricality, dimension of picture 600nm, and the cycle is 1 m, height be 200nm；
(4), Low Temperature Heat Treatment: the step sample with patterned metal aluminum film (3) is put into alumina crucible, carries out in the lehr 500 DEG C, 24 hours processing and make that aluminium film is fully oxidized becomes polymorph A l2O3Film；
(5), high-temperature heat treatment: complete step (4) on the basis of carry out 1200 DEG C, 24 hours heat treatments, it is achieved solid state reaction homoepitaxy, make graphical polymorph A l2O3Film is fully converted to graphical monocrystalline Al2O3Film, completes the preparation of the graphical sapphire substrate for nitride epitaxial growth.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403420A (en) * | 2011-11-11 | 2012-04-04 | 哈尔滨工业大学深圳研究生院 | Preparation method for graphical sapphire substrate |
| CN102621128A (en) * | 2012-04-11 | 2012-08-01 | 中国科学院半导体研究所 | Preparation method of large-area sequential controllable surface-enhanced Raman active substrate |
| CN102868013A (en) * | 2012-10-11 | 2013-01-09 | 南京大学 | Method for manufacturing novel terahertz ultra-wide pass band filter |
Family Cites Families (1)
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Patent Citations (3)
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| CN102621128A (en) * | 2012-04-11 | 2012-08-01 | 中国科学院半导体研究所 | Preparation method of large-area sequential controllable surface-enhanced Raman active substrate |
| CN102868013A (en) * | 2012-10-11 | 2013-01-09 | 南京大学 | Method for manufacturing novel terahertz ultra-wide pass band filter |
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