CN103298903B - 金属钝化的化学机械抛光组合物及方法 - Google Patents

金属钝化的化学机械抛光组合物及方法 Download PDF

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Publication number
CN103298903B
CN103298903B CN201280005131.8A CN201280005131A CN103298903B CN 103298903 B CN103298903 B CN 103298903B CN 201280005131 A CN201280005131 A CN 201280005131A CN 103298903 B CN103298903 B CN 103298903B
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China
Prior art keywords
composition
weight
cmp
forming metal
film forming
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CN201280005131.8A
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English (en)
Chinese (zh)
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CN103298903A (zh
Inventor
J.凯莱赫
P.辛格
V.布鲁希克
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CMC Materials LLC
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Cabot Microelectronics Corp
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Priority claimed from US13/004,113 external-priority patent/US8435421B2/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K8/00—Compositions for drilling of boreholes or wells; Compositions for treating boreholes or wells, e.g. for completion or for remedial operations
    • C09K8/52—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning
    • C09K8/528—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning inorganic depositions, e.g. sulfates or carbonates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201280005131.8A 2011-01-11 2012-01-10 金属钝化的化学机械抛光组合物及方法 Active CN103298903B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/004,113 US8435421B2 (en) 2007-11-27 2011-01-11 Metal-passivating CMP compositions and methods
US13/004,113 2011-01-11
PCT/US2012/020737 WO2012096931A2 (en) 2011-01-11 2012-01-10 Metal-passivating cmp compositions and methods

Publications (2)

Publication Number Publication Date
CN103298903A CN103298903A (zh) 2013-09-11
CN103298903B true CN103298903B (zh) 2015-11-25

Family

ID=46507631

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280005131.8A Active CN103298903B (zh) 2011-01-11 2012-01-10 金属钝化的化学机械抛光组合物及方法

Country Status (9)

Country Link
EP (1) EP2663604B1 (cg-RX-API-DMAC7.html)
JP (1) JP5992925B2 (cg-RX-API-DMAC7.html)
KR (2) KR102077618B1 (cg-RX-API-DMAC7.html)
CN (1) CN103298903B (cg-RX-API-DMAC7.html)
IL (1) IL227384A (cg-RX-API-DMAC7.html)
MY (1) MY163010A (cg-RX-API-DMAC7.html)
SG (1) SG191909A1 (cg-RX-API-DMAC7.html)
TW (1) TWI462981B (cg-RX-API-DMAC7.html)
WO (1) WO2012096931A2 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107851568B (zh) * 2015-07-13 2021-10-08 Cmc材料股份有限公司 用于加工介电基板的方法及组合物
CN108026412B (zh) * 2015-09-03 2021-08-31 嘉柏微电子材料股份公司 用于加工介电基板的方法及组合物
JP6901297B2 (ja) 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007019342A2 (en) * 2005-08-05 2007-02-15 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
WO2010014180A2 (en) * 2008-07-30 2010-02-04 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
CN101747841A (zh) * 2008-12-05 2010-06-23 安集微电子（上海）有限公司 一种化学机械抛光液

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US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6866792B2 (en) * 2001-12-12 2005-03-15 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
GB2393447B (en) * 2002-08-07 2006-04-19 Kao Corp Polishing composition
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
JP4667013B2 (ja) * 2003-11-14 2011-04-06 昭和電工株式会社 研磨組成物および研磨方法
US20060063687A1 (en) * 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
US20070037491A1 (en) * 2005-08-12 2007-02-15 Yuzhuo Li Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing
JP2008192930A (ja) * 2007-02-06 2008-08-21 Fujifilm Corp 金属研磨用組成物及びそれを用いた化学的機械的研磨方法
US7931714B2 (en) * 2007-10-08 2011-04-26 Uwiz Technology Co., Ltd. Composition useful to chemical mechanical planarization of metal
JP5277640B2 (ja) * 2007-10-17 2013-08-28 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US8337716B2 (en) * 2008-01-23 2012-12-25 Uwiz Technology Co., Ltd. Sarcosine compound used as corrosion inhibitor
TWI454561B (zh) * 2008-12-30 2014-10-01 Uwiz Technology Co Ltd A polishing composition for planarizing the metal layer
CN101928520B (zh) * 2009-06-19 2014-03-12 盟智科技股份有限公司 用于平坦化金属层的研磨组成物
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007019342A2 (en) * 2005-08-05 2007-02-15 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
WO2010014180A2 (en) * 2008-07-30 2010-02-04 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
CN101747841A (zh) * 2008-12-05 2010-06-23 安集微电子（上海）有限公司 一种化学机械抛光液

Also Published As

Publication number Publication date
KR20140047015A (ko) 2014-04-21
EP2663604A4 (en) 2016-04-27
JP5992925B2 (ja) 2016-09-14
KR20180123167A (ko) 2018-11-14
EP2663604B1 (en) 2020-07-01
KR102077618B1 (ko) 2020-02-14
MY163010A (en) 2017-07-31
TW201235428A (en) 2012-09-01
TWI462981B (zh) 2014-12-01
WO2012096931A3 (en) 2012-11-01
IL227384A (en) 2017-05-29
WO2012096931A2 (en) 2012-07-19
JP2014507799A (ja) 2014-03-27
KR102017133B1 (ko) 2019-09-02
CN103298903A (zh) 2013-09-11
EP2663604A2 (en) 2013-11-20
IL227384A0 (en) 2013-09-30
SG191909A1 (en) 2013-08-30

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Patentee before: Cabot Microelectronics Corp.

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