CN103296129A - Preparation technology for flexible CIGS solar cell back electrode layer - Google Patents
Preparation technology for flexible CIGS solar cell back electrode layer Download PDFInfo
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- CN103296129A CN103296129A CN201210054330XA CN201210054330A CN103296129A CN 103296129 A CN103296129 A CN 103296129A CN 201210054330X A CN201210054330X A CN 201210054330XA CN 201210054330 A CN201210054330 A CN 201210054330A CN 103296129 A CN103296129 A CN 103296129A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Provided is preparation technology for a flexible CIGS thin film solar cell back electrode layer. A roll-to-roll manufacturing technique is utilized, and a chromium isolation layer and a molybdenum layer are sequentially deposited on a flexible stainless steel substrate to serve as a prefabricated layer of a CIGS absorption layer and the back electrode layer of a cell. Preparation of the chromium isolation layer and the molybdenum layer are both in roll-to-roll film coating mode, a direct current magnetron sputtering method is utilized, different sputtering sources in the same sputtering chamber are prepared step by step, the whole process is simple, feasible and easy to control, and the quality of a prepared membrane is high.
Description
Technical field
The present invention is a kind of preparation technology of flexible CIGS thin-film solar cell dorsum electrode layer, belongs to the photoelectric cell field, more precisely belongs to the photovoltaic solar field of batteries.
Background technology
As the solar cell of clear energy sources develop rapidly in recent years thin-film solar cells because of have cost low, can be mass-produced and be easy to the developing direction that advantage such as integrated will become following solar cell.Wherein copper-indium-galliun-selenium film solar cell has the high absorption coefficient of light, high transformation efficiency, adjustable energy gap, high stability, stronger advantages such as capability of resistance to radiation, be considered to third generation solar cell main material (first generation monocrystalline silicon, second generation polysilicon, amorphous silicon), and existing procucts enter solar cell market.
The highest transformation efficiency of small sample CIGS thin-film solar cells reaches 19.9% in March, 2008, adopts the evaporation preparation of three steps by U.S. regenerative resource laboratory.At present, the conversion efficiency peak of CIGS class solar cell is that German ZSW is in 20.3% of in August, 2010 announcement.But its area has only 0.5cm
2Because Copper Indium Gallium Selenide solar cell element proportioning is difficult to control, uniformity of film is difficult to characteristics such as realization, large-area CIGS thin film solar cell prepares that difficulty is very big, conversion efficiency is on the low side and manufacturing equipment is expensive.
Summary of the invention
The present invention is a kind of preparation technology of flexible CIGS thin-film solar cell dorsum electrode layer.Utilize the preparation method of volume to volume, can realize the production in enormous quantities of CIGS thin-film solar cell.
The present invention is a kind of preparation technology of flexible CIGS thin-film solar cell dorsum electrode layer.Among the present invention, dorsum electrode layer divides the sputter of chromium separator and molybdenum layer.Utilize the production technology of volume to volume (ROLL-TO-ROLL), at the bottom of the flexible stainless steel lining, deposit chromium, molybdenum layer successively, as the preformed layer of CIGS absorbed layer and the dorsum electrode layer of battery.
Among the present invention, dorsum electrode layer divides in the same sputtering chamber of sputtering at of chromium separator and molybdenum layer to be finished, the substep sputter.By the magnetically controlled sputter method of volume to volume, battery is rolled up by precision electric motor and structure control uniform motion, is delivered to sputtering chamber, finishes process of construction.The sputter of chromium separator is finished in rolling for the first time, carries out the sputter of molybdenum layer after the sputter of chromium separator is finished.Wherein, the sputter of molybdenum layer again in two steps, the sputter of high resistant molybdenum and low-resistance molybdenum is finished in the two or three backrush respectively.
The technical scheme for preparing the employing of chromium separator and molybdenum layer among the present invention step by step is:
Sputtering chamber pressure is 1 * 10
-4～1 * 10
-3Feed argon gas during Pa, when sputtering chamber vacuum degree reaches 1～1.5Pa, the sputter of beginning chromium separator.Sputtering source adopts direct current sputtering, and sputtering target material is the chromium target of purity 〉=99.9%.The film thickness of sputter is 1～2 μ m.
After the sputter of chromium layer finished, it was constant to keep the sputter environment, carried out the secondary backrush, the sputter of beginning high resistant molybdenum layer.Sputtering source adopts direct current sputtering, and sputtering target material is the molybdenum target material of purity 〉=99.9%.The film thickness of sputter is 0.1～0.2 μ m.
After the sputter of high resistant molybdenum finished, it was constant to keep the sputter environment, regulated the flow of argon gas, and the vacuum degree in the control sputtering chamber is 0.1～0.2Pa, carries out backrush for the third time, the sputter of beginning low-resistance molybdenum layer, and the thickness of sputter is 0.9～1.2 μ m.
Description of drawings
Fig. 1 is a kind of flexible CIGS thin-film solar cell cell schematics of the present invention.
Fig. 2 is for scheming in the scanning electron microscopy (SEM) that with the stainless steel is the CIGS solar cell of substrate preparation.1 is that CIGS absorbed layer, 2 is low-resistance molybdenum, 3 high resistant molybdenums, 4 chromium layers.As seen from the figure, in conjunction with comparing even compact, formed good Ohmic contact between chromium and molybdenum layer and molybdenum layer and the CIGS absorbed layer.
Embodiment
For further understanding the feasibility of aspect of the present invention characteristics, usability and industrial mass production, enumerate embodiment now:
Easily enter absorbed layer reduction battery performance through Mo because get the Fe element in the stainless steel, so first sputter one deck chromium is necessary as separator before the sputter Mo.When sputtering chamber pressure is 1 * 10
-4～1 * 10
-3Feed argon gas during Pa, when sputtering chamber vacuum degree reaches 1～1.5Pa, adopt dc sputtering to begin the sputter of chromium separator, the film thickness of sputter is 1～2 μ m.After the separator sputter finished, it was constant to keep the sputter environment, carried out the secondary backrush, the sputter of beginning high resistant molybdenum layer, and the film thickness of sputter is 0.1～0.2 μ m.After the sputter of high resistant molybdenum finishes, under 0.1～0.2Pa argon atmospher, carry out backrush for the third time, the sputter of beginning low-resistance molybdenum layer, the thickness of sputter is 0.9～1.2 μ m.
Claims (6)
1. the preparation technology of a flexible copper indium gallium selenide (CIGS) thin film solar cell dorsum electrode layer, it is characterized in that: the production technology of utilizing volume to volume (ROLL-TO-ROLL), on at the bottom of the flexible stainless steel lining, deposit chromium separator, molybdenum layer successively, as the preformed layer of CIGS absorbed layer and the dorsum electrode layer of battery.
2. preparation method according to claim 1, it is characterized in that: the substrate of flexible CIGS thin-film solar cell is the thick stainless steel bands of 25～100 μ m.
3. preparation method according to claim 1, it is characterized in that: the plated film mode of volume to volume (Roll-To-Roll) is all adopted in the preparation of chromium separator and molybdenum layer, and all utilizes the method preparation of magnetically controlled DC sputtering.
4. preparation method according to claim 3 is characterized in that: at first utilize the method for magnetically controlled DC sputtering at substrate plating one deck chromium, thickness is 1～2 μ m.The purpose of plating chromium be in stoping at the bottom of the stainless steel lining the Fe element to the diffusion of absorbed layer.
5. preparation method according to claim 3, it is characterized in that: utilize method sputter Mo layer on the chromium layer of magnetically controlled DC sputtering, the thickness of molybdenum layer is 1～1.5 μ m.
6. preparation method according to claim 5, it is characterized in that: the preparation of Mo layer is finished in two steps, specifically comprises following processing step:
(1) at the thick Mo layer of Ar Pressure deposit one deck 0.1～0.2 μ m of 1～1.5Pa.
(2) at the thick Mo layer of Ar Pressure deposit one deck 0.9～1.2 μ m of 0.1～0.2Pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210054330XA CN103296129A (en) | 2012-03-05 | 2012-03-05 | Preparation technology for flexible CIGS solar cell back electrode layer |
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| CN201210054330XA CN103296129A (en) | 2012-03-05 | 2012-03-05 | Preparation technology for flexible CIGS solar cell back electrode layer |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101061588A (en) * | 2004-09-18 | 2007-10-24 | 纳米太阳能公司 | Formation of solar cells on foil substrates |
| US20110061730A1 (en) * | 2007-06-12 | 2011-03-17 | Guardian Industries Corp. | Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell |
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2012
- 2012-03-05 CN CN201210054330XA patent/CN103296129A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101061588A (en) * | 2004-09-18 | 2007-10-24 | 纳米太阳能公司 | Formation of solar cells on foil substrates |
| US20110061730A1 (en) * | 2007-06-12 | 2011-03-17 | Guardian Industries Corp. | Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell |
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Application publication date: 20130911 |