CN101540345A - Nanometer silica film three-layer stacked solar cell and preparation method thereof - Google Patents

Nanometer silica film three-layer stacked solar cell and preparation method thereof Download PDF

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CN101540345A
CN101540345A CN200910031173A CN200910031173A CN101540345A CN 101540345 A CN101540345 A CN 101540345A CN 200910031173 A CN200910031173 A CN 200910031173A CN 200910031173 A CN200910031173 A CN 200910031173A CN 101540345 A CN101540345 A CN 101540345A
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film
battery
silane
preparation
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CN101540345B (en
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丁建宁
袁宁一
程广贵
王秀琴
何宇亮
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Jiangsu University
Jiangsu Polytechnic University
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Jiangsu Polytechnic University
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a film solar cell and a preparation method thereof, in particular to a nanometer silica film three-layer stacked solar cell and a preparation method thereof. The method of plasma enhanced chemical vapor deposition (PECVD) is adopted for preparing a hydrogenated nanometer silica film (nc-Si:H). An nc-Si:H/nc-Si:H/nc-Si:H film three-layer stacked solar cell is prepared on a soft metal or polyimide film substrate. The top cell, the middle cell and the bottom cell adopt the N<+>NIPP<+> structure. The method of radio frequency sputtering is adopted for depositing an Al/AlxZn1-xO double-layer back electrode and an AlxZn1-xO film upper electrode. The invention avoids the use of amorphous silicon and expensive amorphous germanium silicon; the relatively thinner nanometer silica film three-layer stacked solar cell with high efficiency and stability is obtained on the soft substrate by taking advantage of the adjustable scope of the band gap of nanometer silica width, the relatively higher absorption coefficient and lower photoinduced damping effect. The invention achieves simple process and low cost of the used materials and causes no pollution to the environment.

Description

Nanometer silica film three-layer stacked solar cell and preparation method thereof
Technical field
The present invention relates to a kind of thin film solar cell and preparation method thereof, refer in particular to the thin film solar cell of the three lamination structures of utilizing the Nano thin film material preparation.
Background technology
Along with being on the rise of energy crisis and environmental pollution, the exploitation renewable and clean energy resource becomes one of great strategic issue in the international coverage.Solar energy is inexhaustible clean energy resource, and therefore, development and use solar energy has become the strategic decision of the countries in the world sustainable development energy.Solar ray energy generating be economy of large scale utilize the important means of solar energy.Therefore, the research in big positive electricity pond is subjected to the generally attention of countries in the world.
Amorphous silicon film solar battery is a kind of traditional silicon-based thin film solar cell, because of there being the photic decline problem that causes owing to the S-W effect, the bad stability that causes hull cell, especially the thicker single junction cell of intrinsic absorbed layer, the battery decline can reach more than 30%, and the large tracts of land that has had a strong impact on the thin film amorphous silicon battery is promoted.In order to reduce the photo attenuation effect of amorphous silicon membrane, several technology that adopt in the research of present silicon-based thin film solar cell both at home and abroad all are by the thickness that reduces amorphous silicon membrane or avoid using amorphous silicon membrane to reduce the photo attenuation effect fully.As amorphous silicon/microcrystalline silicon film dual stack solar cell, amorphous silicon/microcrystal silicon/microcrystal silicon three-layer stacked solar cell, amorphous silicon/amorphous germanium silicon/Nano thin film, amorphous silicon/nano-silicon/nanometer silica film three-layer stacked solar cell.But because the band gap of microcrystal silicon material remains indirect band gap, its absorption coefficient of light is lower, in order to improve the transformation efficiency of amorphous silicon/microcrystalline silicon film stacked solar cell, cascade solar cell, just must increase substantially the thickness of microcrystalline silicon solar cell.The raising of microcrystalline silicon film thickness increases cost on the one hand, reduces production efficiency, and on the other hand, thick film peels off because of bending causes the film cracking on flexible substrate easily.And the raw material of amorphous germanium silicon is relatively expensive, and exists than higher efficient decline problem.The structure that above-mentioned laminated cell adopts is NIP or PIN structure.
Nano thin film is a kind of novel semiconductor material that presents the quantization effect, has than amorphous silicon membrane and the more superior performance of polysilicon membrane.Nanocrystal silicon and microcrystal silicon all are the crystal grain of nano-scale and the mixture of amorphous silicon, but crystallization rate is different, and grain size is also different.Nano-silicon is with respect to microcrystal silicon, its carrier mobility height, absorption coefficient height.By the adjusting crystallization rate, the content of hydrogen in the size of nanocrystal and the film, the average energy gap that can in a big way, regulate Nano thin film, thus improve the absorption region of Nano thin film to spectrum.But the requirement of relative amorphous silicon of the preparation technology of nano-silicon and microcrystal silicon is much higher.Battery and end battery during Nano thin film is used as usually in present silica-based laminated film solar battery, and the top battery is still selected amorphous silicon for use, mainly is owing to the big optical band gap of amorphous silicon, but still there is bigger efficient decline problem in thin film solar cell like this.
The present invention by regulating crystallization rate, nanocrystal size and film in the content of hydrogen, the average energy gap of regulating Nano thin film in a big way in avoids using amorphous silicon and amorphous germanium silicon, the top battery has also adopted nano-silicon, the N of single battery employing simultaneously +NIPP +Structure prepares nanometer silica film three-layer stacked solar cell.
Summary of the invention
The purpose of this invention is to provide a kind of nanometer silica film three-layer stacked solar cell and preparation method thereof, using plasma strengthens nano-silicon (nc-Si:H) film of chemical gaseous phase depositing process (PECVD) preparation hydrogenation.On flexible metal or polyimide film substrate, the film three-layer stacked structure solar cell of preparation nc-Si:H/nc-Si:H/nc-Si:H, the top battery, middle battery and end battery adopt N +NIPP +Structure.Utilize RF sputtering method depositing Al/Al xZn 1-xDouble-deck back electrode of O and Al xZn 1-xO film top electrode.
Realize that technical scheme of the present invention is:
1, sputtered aluminum target, depositing Al film on flexible metal or polyimide film substrate, and then sputter Al earlier xZn 1-xO (x=0～0.02) ceramic target depositing zinc oxide trapping layer, preparation double bottom electrode A l/Al xZn 1-xO (x=0～0.02);
2, utilize the PECVD method to prepare nano-silicon (nc-Si:H) the intrinsic absorbed layer of three kinds of different optical band gap respectively, respectively as end battery I layer, middle battery I layer and top battery I layer;
3, utilize the doping of PECVD method and boron to prepare p type or p +The type silicon thin film, the flow-rate ratio of borine and silane is 5%～20%; Utilize the doping of PECVD method and phosphorus to prepare n type or n +The type silicon thin film, the flow-rate ratio of phosphine and silane is 5%～16%; The thinner ratio ([SiH of used silane wherein 4]/[SiH 4+ H 2]) be 5%, the thinner ratio ([B of borine 2H 6]/[B 2H 6+ H 2]) be 0.5%, the thinner ratio ([PH of phosphine 3]/[PH 3+ H 2]) be 0.5%.
4, respectively the hydrogen Passivation Treatment is carried out at the interface in the nanometer silica film three-layer stacked solar cell structure;
5, sputter Al xZn 1-xO ceramic target deposit transparent top electrode;
6, wet etching top electrode suede structure.
In the above-mentioned preparation scheme, the concrete sputter procedure of step 1 is: adopting purity is 99.99% aluminium target, utilizes RF sputtering method depositing Al film, and rf frequency is 13.56MHz, and working gas is an argon gas; Employing purity is 99.99% Al xZn 1-xO (x=0～0.02) ceramic target is utilized the RF sputtering method depositing Al xZn 1-xThe work of O film, rf frequency is 13.56MHz, working gas is an argon gas.
In the above-mentioned preparation scheme, step 2 is to utilize the PECVD method to control the content of hydrogen in crystallization rate, grain size and the film of film by the flow-rate ratio, radio-frequency power and the depositing temperature that change Dc bias, silane and hydrogen, and nano-silicon (nc-Si:H) the intrinsic absorbed layer of three kinds of different optical band gap of preparation is the I layer.Concrete technological parameter is: the rf frequency of deposit film is 13.56MHz, the thinner ratio ([SiH of silane 4]/[SiH 4+ H 2]) be 5%.The technological parameter of end battery I layer: silane/hydrogen flowing quantity ratio is controlled between 8/2～7/3, and radio-frequency power is at 100～150W, and depositing temperature is at 250～280 ℃, Dc bias 100V; In the technological parameter of battery I layer: silane/hydrogen flowing quantity is than between 6/4～5/5, and radio-frequency power is at 100～150W, and depositing temperature is at 190～230 ℃, Dc bias 100～170V; The technological parameter of top battery I layer: silane/hydrogen flowing quantity is than between 4/6～2/8, and radio-frequency power is at 100～150W, and depositing temperature is at 150～200 ℃, Dc bias 150～200V.
State in the preparation scheme, the concrete preparation process of step 3 is: feed silane and borine, silane and phosphine on the basis of the pecvd process parameter of each single battery I layer, are adjusted the flow of borine and phosphine, prepare P, P respectively +With N, N +The type silica-base film.Concrete technology is: the end, in, the P layer of top battery: the flow-rate ratio of borine and silane is 5%～10%, depositing temperature, Dc bias, radio-frequency power is with the same with the I layer process (step 2) of each single battery; The end, in, the P of top battery +Layer: the flow-rate ratio of borine and silane is 10%～20%, depositing temperature, and Dc bias, radio-frequency power is the same with the I layer process (step 2) of each single battery;
The end, in, the N layer of top battery: the flow-rate ratio of phosphine and silane is 5%～10%, depositing temperature, Dc bias, radio-frequency power is with the same with the I layer process (step 2) of each single battery; The end, in, the N of top battery +Layer: the flow-rate ratio of phosphine and silane is 10%～16%, depositing temperature, and Dc bias, radio-frequency power is with the same with the I layer process (step 2) of each single battery.The thinner ratio ([SiH of used silane wherein 4]/[SiH 4+ H 2]) be 5%, the thinner ratio ([B of borine 2H 6]/[B 2H 6+ H 2]) be 0.5%, the thinner ratio ([PH of phosphine 3]/[PH 3+ H 2]) be 0.5%.
In the above-mentioned preparation scheme, the concrete technology of the Passivation Treatment of hydrogen is in the step 4: after every layer film deposition finished, logical hydrogen 15 minutes was done Passivation Treatment.
In the above-mentioned preparation scheme, the concrete deposition process of step 5 is: employing purity is 99.99% Al xZn 1-xO (x=0～0.02) ceramic target is utilized the RF sputtering method depositing Al xZn 1-xO film, working gas are argon gas.
Adopt the structure of three laminate film solar cells of such scheme preparation to be: to be followed successively by from bottom to upper strata: flexible metal or polyimide film substrate, double bottom electrode A l/Al xZn 1-xO, N +NIPP +Battery, N at the bottom of the structure nano silicon +NIPP +Battery, N in the structure nano silicon +NIPP +Structure nano silicon top battery and Al xZn 1-xThe O top electrode.N, I, P layer are grown in independent chamber respectively.
Advantage of the present invention is to avoid using amorphous silicon and expensive amorphous germanium silicon, utilize the wide band gap adjustable extent of nano-silicon and relative higher absorption coefficient, low photo attenuation effect, on flexible substrate, prepare the nano-silicon three laminate film solar cells of the less efficient stable of thickness.Technology is simple, the material therefor cost is low, environmentally safe.
Description of drawings
The structural representation of three lamination silicon-based thin film solar cells among Fig. 1 embodiment
Fig. 2 Al-Doped ZnO (Al 0.02Zn 0.98O) transmission spectrum of film
Fig. 3 utilizes the atomic force microscope photo of intrinsic Nano thin film of the preparation technology preparation of top battery I layer in the example
Fig. 4 utilizes the Raman figure of intrinsic Nano thin film of the preparation technology preparation of top battery I layer in the example
Fig. 5 utilizes P layer and the absorption coefficient of I layer and the graph of a relation of wavelength of preparation technology's preparation of top battery P layer and I layer in the example
Embodiment
1. the structural design of solar cell
Design top battery, middle battery and end battery are N at the bottom of the stainless steel lining +NIPP +The nanometer silica film three-layer stacked solar cell of structure.Increase N +Layer, P +Be in order to reduce contact resistance, to improve short circuit current and open circuit voltage; The existence of P layer and N layer simultaneously makes I/P, and the slow transition of N/P interface energy band mismatch reduces interface state density, thereby improves open circuit voltage and fill factor, curve factor.
Adopt Al xZn 1-xO (x=0.02)/Al composite back electrode strengthens long wavelength's reflection of light, and absorbing of the light of increase solar cell stops Al to spread to battery simultaneously.The top electrode suede structure increases the absorption of light.
2, the preparation of three-layer stacked solar cell
2.1 the cleaning of substrate slice
To utilizing the acetone ultrasonic cleaning at the bottom of the stainless steel lining, use deionized water rinsing again, oven dry.
To polyimide substrate, utilize the deionized water ultrasonic cleaning, oven dry.
After substrate slice enters depositing system, utilize the argon aura to clean again 10 minutes.
2.2 utilize sputtering method to prepare the double bottom electrode
Sputter cavity base vacuum is 1 * 10 -4Pa.On at the bottom of the stainless steel lining that cleaned, utilize Ar earlier +The Al film of sputtered aluminum target deposit thickness about 80nm, sputter Al again xZn 1-xO (x=0.02) ceramic target deposits a layer thickness about 70nm, the Al of square resistance about 30 Ω xZn 1-xO (x=0.02) film.Utilize similarity condition to be deposited on Al on the glass substrate xZn 1-xThe transmission spectrum of O is seen accompanying drawing 2.Al as can be seen xZn 1-xThe optical absorption band edge of O is about 300nm, and the transmitance of visible region is about 90%.
2.3 utilize the PECVD method on hearth electrode, to prepare the hydrogenated nano-crystalline silicon thin films single battery successively.
Below the thinner ratio ([SiH of used silane 4]/[SiH 4+ H 2]) be 5%, the thinner ratio [B of borine 2H 6]/[B 2H 6+ H 2] and phosphine thinner ratio [PH 3]/[PH 3+ H 2] be 0.5%.
2.3.1 end cell nano silicon N +NIPP +The preparation of structure
Film deposition conditions: base vacuum is 1 * 10 -4Pa, rf frequency are 13.56MHz, and radio-frequency power is at 150W, and depositing temperature is at 250 ℃, Dc bias 100V.
N +Layer: silane flow rate 80sccm, hydrogen flowing quantity 20sccm, phosphine flow 9sccm, the about 10nm of thickness.
N layer: silane flow rate 80sccm, hydrogen flowing quantity 20sccm, phosphine flow 6sccm, the about 10nm of thickness.
I layer: silane flow rate 75sccm, hydrogen flowing quantity 25sccm, the about 600nm of thickness.
P layer: silane flow rate 70sccm, hydrogen flowing quantity 30sccm, borine flow 5sccm, the about 10nm of thickness.
P +Layer: silane flow rate 70sccm, hydrogen flowing quantity 30sccm, borine flow 8sccm, the about 10nm of thickness.
2.3.2 middle cell nano silicon N +NIPP +The preparation of structure
Film deposition conditions: base vacuum is 1 * 10 -4Pa, rf frequency are 13.56MHz, and radio-frequency power is at 150W, and depositing temperature is at 210 ℃, Dc bias 150V.
N +Layer: silane flow rate 55sccm, hydrogen flowing quantity 45sccm, phosphine flow 6sccm, the about 10nm of thickness.
N layer: silane flow rate 55sccm, hydrogen flowing quantity 45sccm, phosphine flow 4sccm, the about 10nm of thickness.
I layer: silane flow rate 50sccm, hydrogen flowing quantity 50sccm, the about 400nm of thickness.
P layer: silane flow rate 45sccm, hydrogen flowing quantity 55sccm, borine flow 4sccm, the about 10nm of thickness.
P +Layer: silane flow rate 45sccm, hydrogen flowing quantity 55sccm, borine flow 6sccm, the about 10nm of thickness.
2.3.3 top cell nano silicon N +NIPP +The preparation of structure
Film deposition conditions: base vacuum is 1 * 10 -4Pa, rf frequency are 13.56MHz, and radio-frequency power is at 150W, and depositing temperature is at 170 ℃, Dc bias 200V.
N +Layer: silane flow rate 40sccm, hydrogen flowing quantity 60sccm, phosphine flow 4sccm, the about 10nm of thickness.
N layer: silane flow rate 40sccm, hydrogen flowing quantity 60sccm, phosphine flow 2sccm, the about 10nm of thickness.
I layer: silane flow rate 30sccm, hydrogen flowing quantity 70sccm, the about 400nm of thickness.
(Raman collection of illustrative plates (accompanying drawing 4) is analyzed the crystallization rate 47% can learn this layer and average grain size about 2.5 nanometers, and atomic force microscope photo (accompanying drawing 3) also can be found out its nanostructure.
Accompanying drawing 5 show these layers to wavelength less than the absorption coefficient of the light of 450nm 9 * 10 5/ cm.)
P layer: silane flow rate 30sccm, hydrogen flowing quantity 70sccm, borine flow 2sccm, the about 10nm of thickness.
(accompanying drawing 5 shows its ABSORPTION EDGE at 300nm, and is very little greater than the absorption coefficient of light of 300nm to wavelength)
P +Layer: silane flow rate 30sccm, hydrogen flowing quantity 70sccm, borine flow 4sccm, the about 10nm of thickness.
2.4 the processing of boundary defect
Behind every layer of silicon thin film of PECVD deposition, silica-base film is carried out 15 minutes hydrogen Passivation Treatment, to reduce interface compound to charge carrier.
2.5 utilize sputtering method to prepare transparent top electrode
Sputter Al on the battery of nano-silicon top xZn 1-xThe Al of O (x=0.02) ceramic target deposit thickness about 50nm xZn 1-xO (x=0.02) film.
2.6 utilize wet etching, top electrode forms the light trapping structure with certain surface texture
Implementation result: carry out the performance test of battery at last, at AM1.5,100mW/cm 2Under the irradiation of etalon optical power, the open circuit voltage 1.94V of 1.0cm * 1.0cm nano-silicon/nano-silicon/microcrystal silicon three laminate film solar cell samples, stabilization efficiency is 13.3%.

Claims (7)

1, nanometer silica film three-layer stacked solar cell is characterized in that: be followed successively by from bottom to upper strata: flexible metal or polyimide film substrate, double bottom electrode A l/Al xZn 1-xO, N +NIPP +Battery, N at the bottom of the structure nano silicon +NIPP +Battery, N in the structure nano silicon +NIPP +Structure nano silicon top battery and Al xZn 1-xThe O top electrode.
2, the preparation method of the described nanometer silica film three-layer stacked solar cell of claim 1 is specially:
(1) sputtered aluminum target, depositing Al film on flexible metal or polyimide film substrate, and then sputter Al earlier xZn 1-xO (x=0～0.02) ceramic target depositing zinc oxide trapping layer, preparation double bottom electrode A l/Al xZn 1-xO (x=0～0.02);
(2) utilize the PECVD method to prepare nano-silicon (nc-Si:H) the intrinsic absorbed layer of three kinds of different optical band gap respectively, respectively as end battery I layer, middle battery I layer and top battery I layer;
(3) utilize the doping of PECVD method and boron to prepare p type or p +The type silicon thin film, the flow-rate ratio of borine and silane is 5%～20%; Utilize the doping of PECVD method and phosphorus to prepare n type or n +The type silicon thin film, the flow-rate ratio of phosphine and silane is 5%～16%; The thinner ratio ([SiH of used silane wherein 4]/[SiH 4+ H 2]) be 5%, the thinner ratio ([B of borine 2H 6]/[B 2H 6+ H 2]) be 0.5%, the thinner ratio ([PH of phosphine 3]/[PH 3+ H 2]) be 0.5%;
(4) respectively the hydrogen Passivation Treatment is carried out at the interface in the nanometer silica film three-layer stacked solar cell structure;
(5) sputter Al xZn 1-xO ceramic target deposit transparent top electrode;
(6) wet etching top electrode suede structure.
3, the described preparation method of claim 2 is characterized in that: the concrete sputter procedure of step 1 is: adopting purity is 99.99% aluminium target, utilizes RF sputtering method depositing Al film, and rf frequency is 13.56MHz, and working gas is an argon gas; Employing purity is 99.99% Al xZn 1-xO (x=0～0.02) ceramic target is utilized the RF sputtering method depositing Al xZn 1-xThe work of O film, rf frequency is 13.56MHz, working gas is an argon gas.
4, the described preparation method of claim 2, it is characterized in that: step 2 is to utilize the PECVD method to control the content of hydrogen in crystallization rate, grain size and the film of film by the flow-rate ratio, radio-frequency power and the depositing temperature that change Dc bias, silane and hydrogen, nano-silicon (nc-Si:H) the intrinsic absorbed layer of three kinds of different optical band gap of preparation is the I layer, concrete technological parameter is: the rf frequency of deposit film is 13.56MHz, the thinner ratio ([SiH of silane 4]/[SiH 4+ H 2]) be 5%; The technological parameter of end battery I layer: silane/hydrogen flowing quantity ratio is controlled between 8/2～7/3, and radio-frequency power is at 100～150W, and depositing temperature is at 250～280 ℃, Dc bias 100V; In the technological parameter of battery I layer: silane/hydrogen flowing quantity is than between 6/4～5/5, and radio-frequency power is at 100～150W, and depositing temperature is at 190～230 ℃, Dc bias 100～170V; The technological parameter of top battery I layer: silane/hydrogen flowing quantity is than between 4/6～2/8, and radio-frequency power is at 100～150W, and depositing temperature is at 150～200 ℃, Dc bias 150～200V.
5, the described preparation method of claim 2 is characterized in that: the end, in, the preparation technology of the P layer of top battery is: the flow-rate ratio of borine and silane is 5%～10%, depositing temperature, Dc bias, radio-frequency power is with the same with the I layer process of each single battery; The end, in, the P of top battery +Layer: the flow-rate ratio of borine and silane is 10%～20%, depositing temperature, and Dc bias, radio-frequency power is the same with the I layer process of each single battery; The end, in, the N layer of top battery: the flow-rate ratio of phosphine and silane is 5%～10%, depositing temperature, Dc bias, radio-frequency power is with the same with the I layer process of each single battery; The end, in, the N of top battery +Layer: the flow-rate ratio of phosphine and silane is 10%～16%, depositing temperature, and Dc bias, radio-frequency power is with the same with the I layer process of each single battery.
6, the described preparation method of claim 2 is characterized in that: the concrete technology of the Passivation Treatment of hydrogen is in the step 4: after every layer film deposition finished, logical hydrogen 15 minutes was done Passivation Treatment.
7, the described preparation method of claim 2 is characterized in that: the concrete deposition process of step 5 is: employing purity is 99.99% Al xZn 1-xO (x=0～0.02) ceramic target is utilized the RF sputtering method depositing Al xZn 1-xO film, working gas are argon gas.
CN2009100311739A 2009-04-24 2009-04-24 Nanometer silica film three-layer stacked solar cell and preparation method thereof Expired - Fee Related CN101540345B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101794828A (en) * 2010-03-12 2010-08-04 河南阿格斯新能源有限公司 Film system of thin-film solar cell, thin-film solar cell and manufacturing method thereof
CN101777591B (en) * 2009-12-30 2011-05-04 南开大学 Full-spectral-domain laminated silicon-base film solar cell
CN102157617A (en) * 2011-01-31 2011-08-17 常州大学 Preparation method of silicon-based nano-wire solar cell
CN103022258A (en) * 2012-12-30 2013-04-03 青海天誉汇新能源开发有限公司 Preparation method for textured Al electrode of photovoltaic cell of flexible substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101777591B (en) * 2009-12-30 2011-05-04 南开大学 Full-spectral-domain laminated silicon-base film solar cell
CN101794828A (en) * 2010-03-12 2010-08-04 河南阿格斯新能源有限公司 Film system of thin-film solar cell, thin-film solar cell and manufacturing method thereof
CN102157617A (en) * 2011-01-31 2011-08-17 常州大学 Preparation method of silicon-based nano-wire solar cell
CN102157617B (en) * 2011-01-31 2013-06-19 常州大学 Preparation method of silicon-based nano-wire solar cell
CN103022258A (en) * 2012-12-30 2013-04-03 青海天誉汇新能源开发有限公司 Preparation method for textured Al electrode of photovoltaic cell of flexible substrate

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