CN103295893A - Wafer-level micro-assembly process - Google Patents
Wafer-level micro-assembly process Download PDFInfo
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- CN103295893A CN103295893A CN2013102097100A CN201310209710A CN103295893A CN 103295893 A CN103295893 A CN 103295893A CN 2013102097100 A CN2013102097100 A CN 2013102097100A CN 201310209710 A CN201310209710 A CN 201310209710A CN 103295893 A CN103295893 A CN 103295893A
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- ephemeral key
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Abstract
The invention discloses a wafer-level micro-assembly process. The process includes S1, bonding a device wafer and a slide wafer through temporary bonding glue to form a temporary bond; S2, performing thinning process on the device wafer of the temporary bond; S3, cutting the thinned device wafer of the temporary bond to obtain a plurality of chips fixed on the slide safer; S4, placing the temporary bond above the device wafer on flip equipment comprising a heating module and an illuminating module, and melting the entire temporary bonding glue through heating or specific illuminating; S5, drawing chips on the flip equipment and performing micro-assembly of the chips; S6, washing the temporary bonding glue left on the surfaces of assembled chips. By the aid of the wafer-level micro-assembly process, an ultra-thin chip micro-assembly process can be realized utmost safely, the chips are guaranteed to be carried and protected well before flipping, and interconnect structure of three-dimensional package is completed effectively.
Description
Technical field
The present invention relates to the microelectronic packaging technology field, particularly relate to the little packaging technology of a kind of wafer scale, effectively to finish the interconnection structure of three-dimension packaging.
Background technology
Along with people to the requirement of the electronic product development to directions such as miniaturization, multi-functional, environment-friendly types, people make great efforts to seek to do electronic system more little, integrated level is more and more higher, function does more and more, more and more stronger, thin wafer and thin chip is processed into bottleneck for the ultra-thin product of volume production thus.And drawn interim bonding on this basis and torn bonding technology open.
Interim bonding with tear bonding open and have following advantage: at first, the slide glass wafer provides supportive protection mechanically for thin device wafers, so just can carry out back process by the makers' equipment of normal component wafer.For the ultra thin device wafer, can realize the PROCESS FOR TREATMENT of wafer scale.Therefore, by interim bonding and tear bonding techniques open, utilize every equipment of device wafers factory can both handle thin device wafers, and need not conversion unit again, and do not need special termination effector, anchor clamps or wafer cassette.
Meanwhile tear bonding open and also show certain destabilizing factor, because thin wafer has lacked certain support bearing in the technology in follow-up little packaging technology, and do not have enough safeguard measures.When device wafers thickness arrival 50um was following, the yield of tearing bonding technology open can not be guaranteed now, and this also allows manufacturer can not realize the volume production of ultra-thin wafers as early as possible.
Because the multiple unfavorable factor of the method for these monolithic traditional handicrafts, to rate of finished products and the reliability of product, and finally go out commodity price and all cause great influence.Various new processes also progressively are suggested and discuss, but these methods all are to carry out on the technology basis that the full wafer wafer is torn bonding open, exist make have a big risk, shortcoming such as cost height.
Therefore, at above-mentioned technical problem, be necessary to provide a kind of new wafer scale little packaging technology.
Summary of the invention
In view of this, the object of the present invention is to provide the little packaging technology of a kind of wafer scale, at first form the ephemeral key zoarium of device wafers and slide glass wafer, then by scribing, before flip-chip, use heat thawing or UV illumination method to reduce the bonding force of ephemeral key rubber alloy between single chips and the slide glass wafer, realize the manufacture method of flip-chip again, effectively to finish the interconnection structure of three-dimension packaging.
To achieve these goals, the technical scheme that provides of the embodiment of the invention is as follows:
The little packaging technology of a kind of wafer scale, described technology may further comprise the steps:
S1, employing ephemeral key rubber alloy carry out bonding with device wafers and slide glass wafer, and formation ephemeral key zoarium, described ephemeral key rubber alloy are the polymeric material that bonding force reduced under the thawing of arrival rated temperature or particular light ray were shone;
S2, the device wafers on the ephemeral key zoarium is carried out reduction process;
S3, to the device wafers behind the attenuate in ephemeral key zoarium cutting, obtain some chips that are fixed on the slide glass wafer;
Comprise heating module or illumination module on S4, the upside-down mounting equipment, device wafers ephemeral key zoarium up is positioned on the upside-down mounting equipment, melt whole ephemeral key rubber alloies by heating or particular light ray irradiation;
S5, draw chip and chip is carried out little assembling at upside-down mounting equipment;
The residual ephemeral key rubber alloy of chip surface after S6, the little assembling of cleaning.
As a further improvement on the present invention, described ephemeral key rubber alloy is that the slide glass wafer is silicon slide glass wafer or glass slide wafer when arriving rated temperature melted polymer material; When described ephemeral key rubber alloy was the polymeric material of particular light ray irradiation generation separating interface, the slide glass wafer was the glass slide wafer.
As a further improvement on the present invention, described step S4 specifically comprises:
If the ephemeral key rubber alloy reaches the ephemeral key rubber alloy by the heating module heating and melts required rated temperature, make the ephemeral key rubber alloy be in molten condition for arriving rated temperature melted polymer material;
If the ephemeral key rubber alloy is the polymeric material that the particular light ray irradiation produces separating interface, carry out the particular light ray irradiation by the illumination module at the slide glass wafer, reduce the bonding force of ephemeral key rubber alloy.
As a further improvement on the present invention, the cutting method of " device wafers behind the attenuate in the ephemeral key zoarium being cut " among the described step S3 by cutter, wet etching, dry etching or laser realizes.
As a further improvement on the present invention, among the described step S3 depth of cut more than or equal to the thickness of device wafers and be less than or equal to device wafers and the gross thickness of ephemeral key rubber alloy.
As a further improvement on the present invention, " little assembling " comprises the encapsulation to device wafers and chip to substrate of chip extremely chip, chip among the described step S5.
As a further improvement on the present invention, described step S6 is specially:
The method of removing by wet method dissolving or plasma is cleaned the residual ephemeral key rubber alloy of chip surface after little assembling.
As a further improvement on the present invention, also comprise in the described technology:
Prepare TSV, metal interconnected and dimpling point in device wafers.
The beneficial effect of the little packaging technology of device wafers level of the present invention is:
Realize the making of the little packaging technology of device wafers level, adopt interim bonding with device wafers and the combination of slide glass wafer, pass through scribing again, device wafers is divided into single chips, heating slide glass wafer melts the ephemeral key rubber alloy before flip-chip at last, realizes the manufacture method of the little assembling of ultra-thin chip.Can at utmost realize little packaging technology of ultra thin device wafer safely by this method, guarantee that chip has good carrying protection before upside-down mounting.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, the accompanying drawing that describes below only is some embodiment that put down in writing among the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Figure 1 shows that the flow chart of the little packaging technology of wafer scale of the present invention;
Fig. 2 a～2e is depicted as the particular flow sheet of the little packaging technology of wafer scale in the present invention's one preferred implementation.
Embodiment
Describe the present invention below with reference to embodiment shown in the drawings.But these execution modes do not limit the present invention, and the conversion on the structure that those of ordinary skill in the art makes according to these execution modes, method or the function all is included in protection scope of the present invention.
The invention discloses the little packaging technology of a kind of wafer scale, comprising: interim bonding, device wafers cutting, the heating of slide glass wafer, flip-chip, leave over the technologies such as removal of bonding glue.After adopting interim bonding, the method that first cutting device wafer carries out flip-chip again realizes thin device wafers to the manufacture craft that single chips carries out little assembling, has solved existing conventional thin device wafers and has held and relevant issues such as thin chip cutting.
Join shown in Figure 1ly, the little packaging technology of a kind of wafer scale of the present invention comprises:
S1, employing ephemeral key rubber alloy carry out bonding with device wafers and slide glass wafer, and formation ephemeral key zoarium, ephemeral key rubber alloy are the polymeric material that bonding force reduced under the thawing of arrival rated temperature or particular light ray were shone;
S2, the device wafers on the ephemeral key zoarium is carried out reduction process;
S3, to the device wafers behind the attenuate in ephemeral key zoarium cutting, obtain some chips that are fixed on the slide glass wafer;
Comprise heating module or illumination module on S4, the upside-down mounting equipment, device wafers ephemeral key zoarium up is positioned on the upside-down mounting equipment, melt whole ephemeral key rubber alloies by heating or particular light ray irradiation;
S5, draw chip and chip is carried out little assembling at upside-down mounting equipment;
The residual ephemeral key rubber alloy of chip surface after S6, the little assembling of cleaning.
Particularly, this technology may further comprise the steps:
S1, employing ephemeral key rubber alloy carry out bonding with device wafers and slide glass wafer, form the ephemeral key zoarium.
Wherein, device wafers and slide glass wafer bonding technology are that the ephemeral key rubber alloy by polymeric material carries out bonding, the ephemeral key rubber alloy is for arriving the polymeric material that bonding force reduces under rated temperature thawing or the particular light ray irradiation, and the slide glass wafer material is silicon or glass.
When ephemeral key rubber alloy (as HT series of keys rubber alloy etc.) when arriving rated temperature melted polymer material, the slide glass wafer is silicon slide glass wafer or glass slide wafer; When the ephemeral key rubber alloy be particular light ray irradiation down bonding force reduce polymeric material the time (as UV glue etc.), the slide glass wafer is the glass slide wafer.
S2, the device wafers on the ephemeral key zoarium is carried out reduction process.Specifically comprise:
At first a surface prepares TSV, metal interconnected and dimpling point etc. on device wafers;
By the method for grinding, the device wafers on the ephemeral key zoarium is carried out attenuate then, the device wafers thickness behind the attenuate is 10～300 μ m;
Carry out technologies such as etching after attenuate is finished again on another surface of device wafers, make TSV expose the metal interconnected and dimpling point of back preparation.
S3, the device wafers behind the attenuate in the ephemeral key zoarium is cut, obtain some chips that are fixed on the slide glass wafer.
The cutting method that device wafers in the ephemeral key zoarium is cut by cutter, wet etching, dry etching or laser realizes, depth of cut is more than or equal to the thickness of device wafers and be less than or equal to device wafers and the gross thickness of ephemeral key rubber alloy.
As when adopting cutter cutting device wafer, Qie Ge tool marks are parked in the middle of the ephemeral key rubber alloy at last, and device wafers was cut into some separation and was fixed in chip on the slide glass wafer this moment.
At first device wafers and slide glass wafer are carried out interim bonding by adhesive in the prior art, behind the interim bonding, this device wafers lamination is carried out back side processing (attenuate, etching, metallization etc.), tear bonding then open, thin devices wafer is stripped down from the slide glass wafer.At last again to device wafers cut separately, technology such as encapsulation.Do not tear the bonding step open and arrange among the present invention; after finishing, directly cuts at the slide glass wafer device wafers surface treatment; cutting obtains again flip-chip being encapsulated into assigned address behind some chips, has guaranteed that so chip has good carrying protection before upside-down mounting.
Comprise heating module or illumination module on S4, the upside-down mounting equipment, device wafers ephemeral key zoarium up is positioned on the upside-down mounting equipment, melt whole ephemeral key rubber alloies by heating or particular light ray irradiation.
This step is finished at the upside-down mounting equipment with heating platform or particular light platform.
If the ephemeral key rubber alloy reaches the ephemeral key rubber alloy by the heating module heating and melts required rated temperature, make the ephemeral key rubber alloy be in molten condition for arriving rated temperature melted polymer material;
If the ephemeral key rubber alloy is the polymeric material that the particular light ray irradiation produces separating interface, carry out the particular light ray irradiation by the illumination module at the slide glass wafer, reduce the bonding force of ephemeral key rubber alloy.
S5, utilize upside-down mounting equipment to draw chip, and chip is carried out little assembling.
After heating or particular light ray irradiation, the ephemeral key rubber alloy bonding force between chip and slide glass wafer is less, can utilize upside-down mounting equipment that ad-hoc location and welding are arrived in the chip pick-up upside-down mounting, and the upside-down mounting welding generally connects by the method realization of thermocompression bonding or hot reflux.
In the packaging technology of prior art, normally device wafers encapsulates the device wafers that obtains being stacked after finishing, and then cuts to the encapsulation of device wafers (wafer to wafer), obtains some chips.And in the different technology of the present invention, at first with device wafers and the combination of slide glass wafer, through scribing device wafers is divided into single chips again, flip-chip more at last, the mode of flip-chip packaged chip can be the encapsulation (chip to chip) of chip extremely chip, the chip encapsulation to the encapsulation (chip to wafer) of device wafers or chip to substrate (chip to substrate).
The residual ephemeral key rubber alloy of chip surface after S6, the little assembling of cleaning.
The residual ephemeral key rubber alloy in flip-chip rear surface need be removed, the method that the removal method can select for use wet method dissolving or plasma to remove according to the difference of ephemeral key rubber alloy.
If adopt HT series of keys rubber alloy, generally adopt the Remover chemical liquids to remove among the present invention; If use UV glue, the ephemeral key rubber alloy can directly remove after the illumination.
Be illustrated in figure 2 as the particular flow sheet of the little packaging technology of wafer scale in the embodiment of the present invention, concrete processing step is as follows:
1, choosing device wafers is silicon chip, finishes the device wafers surface treatment on device wafers one surface, comprises technologies such as preparation TSV, metal interconnected and dimpling point;
2, choose slide glass wafer 20 and be the naked silicon chip of 200um thickness;
3, utilize the ephemeral key rubber alloy 30 realization device wafers 10 of HT series and the interim bonding of slide glass wafer 20, form the ephemeral key zoarium;
4, the device wafers on the ephemeral key zoarium is carried out reduction process, the device wafers 10 behind the attenuate is about 50um, similarly prepares metal interconnected behind the attenuate on the lateral surface of device wafers and the dimpling point, obtains the bonding body structure shown in Fig. 2 a;
5, shown in Fig. 2 b, utilize saw blade with device wafers 10 cuttings, cutting back tool marks are parked in the middle of the ephemeral key rubber alloy.Cutting back device wafers 10 is divided into some by the chip 11 of ephemeral key rubber alloy 30 independent stationary on slide glass wafer 20;
6, select to have the upside-down mounting equipment of heating module, device wafers ephemeral key zoarium up is positioned on the upside-down mounting equipment, and the ephemeral key rubber alloy is heated to thawing, obtain the chip 11 shown in Fig. 2 c;
7, shown in Fig. 2 d, utilize upside-down mounting equipment absorption chip 11 by the mode of upside-down mounting thermocompression bonding chips welding to be arrived certain location, realize flip-chip packaged;
8, utilize the removal of the residual ephemeral key rubber alloy of chemical agent realization chip surface of ephemeral key rubber alloy correspondence, obtain final sample shown in Fig. 2 e.
Below only be the processing step of a preferred implementation of the present invention, in other embodiments, the ephemeral key rubber alloy has the polymer that heat is torn character open except choosing, and can also choose to have the polymer that illumination produces separating interface; Cutting can also adopt the methods such as cutting of wet etching, dry etching or laser to realize; Chip also can be welded to certain location by the mode of hot reflux.
By above execution mode as can be seen, the little packaging technology of wafer scale of the present invention adopts interim bonding with device wafers and the combination of slide glass wafer, pass through scribing again, device wafers is divided into single chips, heating or illumination slide glass wafer melt the ephemeral key rubber alloy before flip-chip at last, realize the manufacture method of the little assembling of ultra-thin chip.
Compared with prior art, the present invention need not to tear open in the full wafer device wafers technology basis of bonding and carries out, and the technology risk is little, cost is low.Can at utmost realize little packaging technology of ultra thin device wafer safely by the little packaging technology of this device wafers level, guarantee that chip has good carrying protection before upside-down mounting, finish the interconnection structure of three-dimension packaging effectively.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and under the situation that does not deviate from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, therefore is intended to include in the present invention dropping on the implication that is equal to important document of claim and all changes in the scope.Any Reference numeral in the claim should be considered as limit related claim.
In addition, be to be understood that, though this specification is described according to execution mode, but be not that each execution mode only comprises an independently technical scheme, this narrating mode of specification only is for clarity sake, those skilled in the art should make specification as a whole, and the technical scheme among each embodiment also can form other execution modes that it will be appreciated by those skilled in the art that through appropriate combination.
Claims (8)
1. little packaging technology of wafer scale is characterized in that described technology may further comprise the steps:
S1, employing ephemeral key rubber alloy carry out bonding with device wafers and slide glass wafer, and formation ephemeral key zoarium, described ephemeral key rubber alloy are the polymeric material that bonding force reduced under the thawing of arrival rated temperature or particular light ray were shone;
S2, the device wafers on the ephemeral key zoarium is carried out reduction process;
S3, to the device wafers behind the attenuate in ephemeral key zoarium cutting, obtain some chips that are fixed on the slide glass wafer;
Comprise heating module or illumination module on S4, the upside-down mounting equipment, device wafers ephemeral key zoarium up is positioned on the upside-down mounting equipment, melt whole ephemeral key rubber alloies by heating or particular light ray irradiation;
S5, draw chip and chip is carried out little assembling at upside-down mounting equipment;
The residual ephemeral key rubber alloy of chip surface after S6, the little assembling of cleaning.
2. technology according to claim 1 is characterized in that, described ephemeral key rubber alloy is that the slide glass wafer is silicon slide glass wafer or glass slide wafer when arriving rated temperature melted polymer material; When described ephemeral key rubber alloy was the polymeric material of particular light ray irradiation generation separating interface, the slide glass wafer was the glass slide wafer.
3. technology according to claim 2 is characterized in that, described step S4 specifically comprises:
If the ephemeral key rubber alloy reaches the ephemeral key rubber alloy by the heating module heating and melts required rated temperature, make the ephemeral key rubber alloy be in molten condition for arriving rated temperature melted polymer material;
If the ephemeral key rubber alloy is the polymeric material that the particular light ray irradiation produces separating interface, carry out the particular light ray irradiation by the illumination module at the slide glass wafer, reduce the bonding force of ephemeral key rubber alloy.
4. technology according to claim 1 is characterized in that, the cutting method of " device wafers behind the attenuate in the ephemeral key zoarium being cut " among the described step S3 by cutter, wet etching, dry etching or laser realizes.
5. technology according to claim 1 is characterized in that, depth of cut is more than or equal to the thickness of device wafers and be less than or equal to device wafers and the gross thickness of ephemeral key rubber alloy among the described step S3.
6. technology according to claim 1 is characterized in that, among the described step S5 " little assembling " comprise the encapsulation to device wafers and chip to substrate of chip extremely chip, chip.
7. technology according to claim 1 is characterized in that, described step S6 is specially:
The method of removing by wet method dissolving or plasma is cleaned the residual ephemeral key rubber alloy of chip surface after little assembling.
8. technology according to claim 1 is characterized in that, also comprises in the described technology:
Prepare TSV, metal interconnected and dimpling point in device wafers.
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| CN103794522A (en) * | 2014-01-24 | 2014-05-14 | 清华大学 | Wafer-wafer, chip-wafer and chip-chip bonding methods |
| CN105047688A (en) * | 2015-07-31 | 2015-11-11 | 深圳市星火辉煌系统工程有限公司 | Process for packaging miniaturized organic light-emitting display device |
| CN103794522B (en) * | 2014-01-24 | 2016-11-30 | 清华大学 | Wafer wafer, chip die and microarray biochip bonding method |
| CN106449505A (en) * | 2016-08-22 | 2017-02-22 | 中国电子科技集团公司第五十五研究所 | Back technique for semiconductor ultrathin device |
| CN106876333A (en) * | 2017-03-28 | 2017-06-20 | 华进半导体封装先导技术研发中心有限公司 | The preparation method and wafer level packaging structure of a kind of wafer level packaging structure |
| CN109449112A (en) * | 2018-09-27 | 2019-03-08 | 华进半导体封装先导技术研发中心有限公司 | Chip assemble method and chip assembled devices |
| CN110690868A (en) * | 2019-09-27 | 2020-01-14 | 无锡市好达电子有限公司 | Novel wafer-level packaging method for filter |
| CN111029356A (en) * | 2019-12-16 | 2020-04-17 | 上海集成电路研发中心有限公司 | Chip packaging method |
| CN111689461A (en) * | 2019-12-30 | 2020-09-22 | 浙江集迈科微电子有限公司 | Coordination method for chip cutting errors in embedded micro-system module |
| CN113078092A (en) * | 2021-03-23 | 2021-07-06 | 浙江集迈科微电子有限公司 | Method for taking ultrathin chip |
| CN113161306A (en) * | 2021-04-15 | 2021-07-23 | 浙江集迈科微电子有限公司 | High-efficiency heat dissipation structure of chip and preparation process thereof |
| CN114628241A (en) * | 2020-12-10 | 2022-06-14 | 武汉新芯集成电路制造有限公司 | Chip bonding method |
| CN115274942A (en) * | 2022-08-02 | 2022-11-01 | 厦门大学 | Transfer method of miniature flip chip |
| CN115881862A (en) * | 2023-02-16 | 2023-03-31 | 江西兆驰半导体有限公司 | Mini LED chip thinning method and mini LED |
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| CN110690868A (en) * | 2019-09-27 | 2020-01-14 | 无锡市好达电子有限公司 | Novel wafer-level packaging method for filter |
| CN111029356A (en) * | 2019-12-16 | 2020-04-17 | 上海集成电路研发中心有限公司 | Chip packaging method |
| CN111689461A (en) * | 2019-12-30 | 2020-09-22 | 浙江集迈科微电子有限公司 | Coordination method for chip cutting errors in embedded micro-system module |
| CN111689461B (en) * | 2019-12-30 | 2023-04-28 | 浙江集迈科微电子有限公司 | Coordination method for chip cutting errors in embedded microsystem module |
| CN114628241A (en) * | 2020-12-10 | 2022-06-14 | 武汉新芯集成电路制造有限公司 | Chip bonding method |
| CN113078092A (en) * | 2021-03-23 | 2021-07-06 | 浙江集迈科微电子有限公司 | Method for taking ultrathin chip |
| CN113161306A (en) * | 2021-04-15 | 2021-07-23 | 浙江集迈科微电子有限公司 | High-efficiency heat dissipation structure of chip and preparation process thereof |
| CN115274942A (en) * | 2022-08-02 | 2022-11-01 | 厦门大学 | Transfer method of miniature flip chip |
| WO2024027201A1 (en) * | 2022-08-02 | 2024-02-08 | 厦门大学 | Method for transferring micro flip chips |
| CN115881862A (en) * | 2023-02-16 | 2023-03-31 | 江西兆驰半导体有限公司 | Mini LED chip thinning method and mini LED |
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Application publication date: 20130911 Assignee: Jiangsu Xinde Semiconductor Technology Co.,Ltd. Assignor: National Center for Advanced Packaging Co.,Ltd. Contract record no.: X2022980027357 Denomination of invention: A wafer level micro assembly process Granted publication date: 20161228 License type: Common License Record date: 20221213 |