CN103293877A - Photolithography device and light-transmitting unit adopting quadrupole exposure mode and photolithography method - Google Patents
Photolithography device and light-transmitting unit adopting quadrupole exposure mode and photolithography method Download PDFInfo
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- CN103293877A CN103293877A CN2013102119519A CN201310211951A CN103293877A CN 103293877 A CN103293877 A CN 103293877A CN 2013102119519 A CN2013102119519 A CN 2013102119519A CN 201310211951 A CN201310211951 A CN 201310211951A CN 103293877 A CN103293877 A CN 103293877A
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Abstract
The invention relates to a photolithography device and light-transmitting unit adopting quadrupole exposure mode and a photolithography method. The photolithography device comprises a photosource, a light-transmitting unit, a condensing lens, a photomask and a projecting lens, which are arranged from top to bottom in sequence, wherein the light-transmitting unit is at least provided with a group of quadrupole light holes; at least one light hole in the light-transmitting unit contains a plurality of gray areas; the gray difference of the plurality of gray areas is transitional difference or saltatory difference; the condensing lens gathers the photosource ray; and the diffracted light is focused on a silicon substrate below the projecting lens via the photomask with diffraction function and the projecting lens. By adopting the photolithography device, the light-transmitting unit and the photolithography method, the synthetic resolutions and process windows of photolithography patterns in different dimensions are obviously improved, in particular, the linewidth dimensions of the photolithography patterns in different dimensions are balanced under the condition that the photolithography patterns are arranged in the XY vertical direction, and simultaneously process cost increase and output reduction caused by multiple exposure are avoided.
Description
Technical field
The present invention relates to semiconductor microactuator electron device manufacturing equipment field, relate in particular to a kind of lithographic equipment of employing four utmost point Exposure modes, logical light unit and photoetching method.
Background technology
Semiconductor devices is made and is adopted the photolithographic exposure mode to form required figure usually, and its basic step is as follows: at first, and resist coating on silicon chip, subsequently, high light is radiated on the silicon substrate by a mask version that is carved with circuit pattern, and the photoresist that is irradiated to part takes place rotten, use the corrosive liquids cleaning silicon chip afterwards, remove rotten photoresist, inscribe and photomask same circuits pattern photoresist figure at silicon substrate, last, through curing and operation such as development, form product wafer.
In the process of whole photolithographic exposure, the performance of lithographic equipment directly has influence on the yield rate of wafer.See also Fig. 1 and Fig. 2, Fig. 1 is for adopting off-axis (Off-Axis) the photolithographic exposure system schematic of the extremely logical light Exposure mode of tradition four, and Fig. 2 is the vertical view of shown in Figure 1 four extremely logical light unit 12.As shown in the figure, incident ray 11 forms diffraction along necessarily departing from by four extremely logical light unit 12 and collector lenses 13 with axis at photomask 14 figure places, and 0 grade and+1 order diffraction light are interfered on silicon substrate 16 surfaces through projecting lens 15 backs and formed component graphics.Wherein, coefficient of coherence σ is an important parameter describing the circular iris size, the degree that its expression projecting lens is occupied by light source, the aperture of the aperture/projecting lens of σ=collector lens, coefficient of coherence σ
InAnd σ
Out, opening angle α and relative direction angle β are the important parameters of describing four utmost point light hole sizes and width, σ
InTo σ
OutDistance is the light hole width, and α determines the light hole size, and relative direction angle β determines light hole to arrange.
Four utmost points exposures is a particular example of off-axis exposure, compares general off-axis exposure, has bigger contrast, higher resolution and better process tolerance at the figure of little live width size.But continue the progress along with manufacturing process, the exposure of simple four utmost points gradually can not satisfy technology to resolution requirements, and the figure that can not guarantee different size has enough resolution, cause a part of figure to be rasterized, form so-called spatial separation (Forbidden Pitch) zone of forbidding.See also Fig. 3, Fig. 3 be four extremely logical light cell size to the influence of different spaces spacing figure live width size, wherein more close to zero, finished product accuracy is more high for critical size (Critical Dimension is called for short CD), technology is more advanced.As shown in the figure, the curve that shows among the figure is about 150nm in spatial separation, and it is bigger to depart from zero point, and critical size error maximum causes some or several interval video picture difficulties.
See also Fig. 4, Fig. 4 is a kind of existing improvement technology synoptic diagram, and it adopts two pairs along the method for photolithographic exposure of axisymmetric four utmost point light holes of printing opacity unit center.This method has reduced the live width size than the fluctuation in the large space pitch area effectively by outer four utmost point light holes of arranging in two pairs, has reduced forming the risk of forbidding the spatial separation zone.
Yet above-mentioned two pairs of four utmost point light holes still lacking dirigibility aspect the live width size of the various figures of balance and the process window, are difficult to the figure of different size is reached the optimised process balance.In sum, how to reach the live width size of various figures and the optimised process balance of process window, not only need four utmost point light holes of suitable dimension, and the exposure that need be complementary with the live width size of various figures.This is the target of the required pursuit of present industry.
Summary of the invention
Fundamental purpose of the present invention is to overcome the defective of prior art, by comprising four utmost point light holes illumination gray difference balance exposure that many gray scales make up, makes the illumination of four utmost point light holes bring into play multi-functionals such as best resolution enhancing and process window balance.
For reaching above-mentioned purpose, technical scheme of the present invention is as follows:
The lithographic equipment of a kind of employing four utmost point Exposure modes comprises: light source, have the four extremely logical light unit in pair of light-transmissive hole at least, collector lens, photomask and projecting lens are arranged from top to bottom successively.Wherein, comprise a plurality of gray areas during at least one light hole in the above-mentioned logical light unit is interior, collector lens is assembled source light and by photomask, the projecting lens with diffraction function diffraction light is focused on the silicon substrate that is positioned at its underpart.
Preferably, described four extremely logical iuuminting holes, light unit are one group, and it is shaped as one of part circular ring type section, fan-shaped, circular, oval, polygon or their combination, and arrange with described logical light unit center rotational symmetry.
Preferably, comprise the quantity of gray area in the light hole of four extremely logical light unit and be the zone of two or more different gray scales, the gray difference of a plurality of gray areas is transition type difference, or is great-jump-forward difference.
Preferably, the gray area in the light hole is shaped as one of strip, circle, ring-type or their combination.
Preferably, the gray area in the light hole is arranged along logical light unit center rotational symmetry.
Preferably, when light hole is circular or oval, gray area be circular, annular or when oval, and the interior gray area of light hole is coaxial with light hole.
Preferably, the outer ring partial coherence factor sigma of light hole in the described four extremely logical light unit
OutScope be 0.7～0.9; Inner round portion coefficient of coherence σ
InScope be 0.3～0.5.
Preferably, the scope of the opening angle α in described four extremely logical iuuminting holes, light unit is 15 °～50 °.
Preferably, described source light wavelength is 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
For reaching above-mentioned purpose, the invention provides a kind of device, technical scheme is as follows:
A kind of logical light unit with four utmost point light holes; Logical light unit has one group at least along logical axisymmetric four utmost point light holes of light unit center; At least one light hole comprises a plurality of gray areas.
Preferably, comprise the quantity of gray area in four utmost point light holes and be the zone of two or more different gray scales, the gray difference of described a plurality of gray areas is transition type difference, or is great-jump-forward difference.
For reaching above-mentioned purpose, the present invention also provides a kind of photoetching method, specifically comprises the steps:
Step S1: according to the litho pattern demand of arranging, choose the group number of four utmost point light holes and determine the outer ring partial coherence factor sigma of four utmost point light holes
Out, inner round portion coefficient of coherence σ
InWith opening angle α, relative direction angle β and light hole shape and orientation;
Step S2: choose gray areas quantity and the combination of arranging in the light hole according to the litho pattern size demand of arranging, to adjust the incident ray exposure;
Step S3: incident ray forms diffracted ray through the photomask diffraction after extremely leading to light unit and collector lens by four;
Step S4: diffracted ray is again through forming final required litho pattern in the photoresist on surface of silicon behind the projecting lens;
Step S5: silicon substrate is cured and develops.
From technique scheme as can be seen, the lithographic equipment of employing four utmost point Exposure modes provided by the invention, it is by installing four extremely logical light unit with variable many gray scales additional, remedy the exposure matching problem with many gray features, balance the exposure of live width size of various figures, and has a dirigibility of process window aspect, just can satisfy at single exposure variable live width size (the various figures that namely have different size and direction) is carried out reaching the optimised process balance in the photoetching process, thereby avoid because the manufacturing cost that adopts method for multiple exposures with multiple to cause increases and produces output descends.
Description of drawings
Fig. 1 is the off-axis photoetching exposure system synoptic diagram of available technology adopting four utmost point Exposure modes
Fig. 2 is the logical light unit schematic top plan view of the off-axis photoetching exposure system of available technology adopting four utmost point Exposure modes shown in Figure 1
Fig. 3 is the influence curve of the Dan Zusi utmost point exposure in the employing system shown in Figure 1 to the photolithographic process capability of different spaces spacing figure live width size
Fig. 4 is the logical light unit schematic top plan view of the off-axis photoetching exposure system of logical axisymmetric four utmost point light holes of light unit center in two pairs of edges of available technology adopting
Fig. 5 has the synoptic diagram of lithographic equipment one preferred embodiment of four utmost point Exposure modes for the present invention
Fig. 6,7 have logical light unit schematic top plan view among the lithographic equipment embodiment of four utmost point Exposure modes for the present invention
Fig. 8 has the schematic top plan view of leading to the light unit in lithographic equipment one preferred embodiment of four utmost point Exposure modes for the present invention
Fig. 9 has many gray scale four utmost point Exposure modes to the influence curve of the photolithographic process capability of different spaces spacing figure live width size for adopting in the embodiment of the invention
Figure 10 is the schematic flow sheet of photoetching method one specific embodiment of the present invention
Embodiment
Some exemplary embodiments that embody feature of the present invention and advantage will be described in detail in the explanation of back segment.Be understood that the present invention can have various variations in different examples, its neither departing from the scope of the present invention, and explanation wherein and be shown in the usefulness that ought explain in essence, but not in order to limit the present invention.
Above-mentioned and other technical characterictic and beneficial effect are elaborated reaching structure and the photoetching method of accompanying drawing 5-9 to the four utmost point light holes of the present invention off-axis photoetching exposure system that is lighting system in conjunction with the embodiments.
Need to prove, the light source that adopts in the lithographic equipment of employing four utmost point Exposure modes in the embodiment of the invention can be arranged on any position of light path system, as long as it is just passable to satisfy off-axis photoetching exposure device needs, this source light wavelength is not done any restriction, preferably, can be 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
See also Fig. 5, Fig. 5 is the synoptic diagram of off-axis light engraving device one preferred embodiment of the present invention's four utmost point Exposure modes.As shown in the figure, this off-axis light engraving device comprises logical light unit 52 with four utmost point light holes, is positioned at collector lens 53 under the logical light unit 52, is positioned at the photomask 54 under the collector lens 53 and is positioned at projecting lens 55 under the photomask 54.Collector lens 53 is used for assembling the source light 51 that passes described logical light unit 52 light holes, and photomask 54 is used for the light that diffraction passes collector lens 53, and projecting lens focuses on the silicon substrate 56 that is positioned at its underpart for the diffraction light that will pass photomask.
That is to say that incident ray 51 forms diffraction along necessarily departing from by four extremely logical light unit 52 and collector lenses 53 with axis at photomask 54 figure places, 0 grade and+1 order diffraction light are interfered on silicon substrate 56 surfaces through projecting lens 55 backs and are formed component graphics.
Generally, the light hole in the four extremely logical light unit 52 can be selected one group for use according to the litho pattern situation of arranging, and also can be chosen as rent more.Many group light holes can be axisymmetric along logical light unit center, also can be asymmetric.In an embodiment of the present invention, comprise a plurality of gray areas during at least one light hole in the four extremely logical light unit 52 is interior, the gray difference of these a plurality of gray areas is transition type difference, or is great-jump-forward difference.Wherein, the cross sectional shape of light hole is one of part circular ring type section, fan-shaped, circular, oval, polygon or their combination; Preferably, light hole is along the central shaft symmetry arrangement of logical light unit 52.Preferable, light hole relative direction angle β is 90 °.
See also Fig. 6, Fig. 6 adopts the schematic top plan view under one group of light hole situation among the lithographic equipment embodiment of four utmost point exposure systems for the present invention.As shown in the figure, if light hole is one group, so, can comprise a plurality of gray areas at least one light hole, and the gray area shape that is positioned at light hole can have any shape, for example bar shaped, one of circular, ring-type or their combination.Preferably, if gray area is made up of many gray areas that are arranged in parallel, many gray areas that are arranged in parallel at the two poles of the earth can also be along logical light unit center rotational symmetry, as light hole 61 and 63.Its four utmost points light hole is arranged and can be the XY vertical direction, as shown in Figure 6, but also other any directions.If gray area is by a plurality of annulars or circular the composition, the gray area in this light hole can be coaxial with light hole, as light hole 64.
See also Fig. 7, Fig. 7 has the schematic top plan view under one group of light hole situation among the lithographic equipment embodiment of four utmost point Exposure modes for the present invention.The present embodiment characteristics are that its four utmost points distribution relative direction angle β is not 90 °, make its have specific folk prescription to, can be directions X, Y-direction or any direction have the reinforcement exposure effect.In the application of reality, the outer ring coefficient of coherence 0.7～0.9 of light hole and inner ring coefficient of coherence 0.3～0.5 can satisfy most of litho pattern demands, certainly, under extreme case, σ
InCan be made as zero, namely carve exposure by off-axis four aurora and become the exposure at quarter of last four aurora of axle, also be operable.In theory, the opening angle α of four utmost point light holes can be 0 ° to 90 °, but in actual applications, opening angle α is 15 ° to 50 ° and is common example.
If comprise many group light holes in the four extremely logical light unit 52, can in one group of light hole gray area be set therein as required, also can in every group of light hole, gray area be set.Gray area number, shape and the arrangement mode etc. of every group of light hole can with above-mentioned one group of light hole embodiment in identical, do not repeat them here.
Particularly, see also Fig. 8, Fig. 8 adopts the schematic top plan view of leading to light unit (comprising two group of four utmost point light hole) in lithographic equipment one preferred embodiment of four utmost point Exposure modes for the present invention.As shown in the figure, comprise two groups of light holes (light hole group 81 and light hole group 82) in the four extremely logical light unit 52.Wherein, comprise the gray area that increases progressively of continuous gray scale from inside to outside in the light hole group 81, light hole group 82 comprises four grayscale bar (grayscale bar 821 with logical light unit center symmetry, grayscale bar 822, grayscale bar 823 and grayscale bar 824), grayscale bar 821 is that gray-scale value is 0.3 grayscale bar, grayscale bar 822 is that gray-scale value is that 1.0 grayscale bar is non-light transmission strip, grayscale bar 823 is that gray-scale value is that 0 grayscale bar is complete light transmission strip, and grayscale bar 824 is grayscale bar of gray-scale value 0.6.
See also Fig. 9, Fig. 9 is for adopting the influence to the photolithographic process capability of different spaces spacing figure live width size that has many gray scale four utmost point Exposure modes in the embodiment of the invention.From figure curve as can be seen, it is less that the curve that shows among the figure departs from zero point in spatial separation, critical size error curve more shown in Figure 3 is much smaller, it has guaranteed that the specific regional video picture in some or several intervals is normal.
In an embodiment of the present invention, lithographic equipment is by installing four extremely logical light unit with variable many gray scales additional, remedy the exposure matching problem with many gray features, balance the exposure of live width size of various figures, and has a dirigibility of process window aspect, can just can satisfy at single exposure variable live width size (the various figures that namely have different size and direction) is carried out reaching in the photoetching process optimised process balance, the exposure that the exposure of many gray scale four utmost points can provide the live width size with various figures to be complementary.
Need to prove that the present invention has the logical light unit in the lithographic equipment of four utmost point Exposure modes, can with lithographic equipment in the locus of parts such as lens, can change, its replacement scheme includes in the scope of the embodiment of the invention.
Below by Figure 10 the technology that the lithographic equipment that adopts the present invention to have four utmost point Exposure modes carries out photoetching is elaborated.See also Figure 10, Figure 10 is the process chart of photoetching method one specific embodiment of the present invention, and above-mentioned photoetching process can comprise the steps:
Step S1: according to the litho pattern demand of arranging, choose the group number of four utmost point light holes, determine the outer ring partial coherence factor sigma of four utmost point light holes
OutWith inner round portion coefficient of coherence σ
In, opening angle α, relative direction angle β, light hole shape and orientation; Wherein, in this step, can carry out according to the photolithographic exposure needs aperture light transmission being arranged and carry out initial option.
Step S2: choose gray areas quantity and the combination of arranging in the light hole according to the litho pattern size demand of arranging, and adjust the incident ray exposure; Wherein, in this step, can determine gray areas quantity and the combination of arranging in four utmost point light holes according to the some or several specific zones in the litho pattern, namely photolithographic exposure is needed the zone of lay special stress on or compensation, carry out the fine setting to the incident ray exposure.
Step S3: incident ray forms diffracted ray by after leading to light unit and collector lens through the photomask diffraction;
Step S4: diffracted ray is again through forming final required litho pattern in the photoresist on surface of silicon behind the projecting lens;
Step S5: silicon substrate is cured and develops.
Wherein, incident ray can be positioned at direct projection directly over the silicon substrate among the step S2, also can be positioned at other positions, direct projection, reflection or refraction.And in actual applications, the source light wavelength of litho machine is 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
Above-described only is embodiments of the invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure done of every utilization instructions of the present invention and accompanying drawing content changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1. lithographic equipment that adopts four utmost point Exposure modes comprises:
Light source;
At least the logical light unit that has one group of four utmost point light hole;
Collector lens is positioned under the described logical light unit, is used for assembling the source light that passes light hole described in the described logical light unit;
Photomask is positioned under the described collector lens, is used for the light that diffraction passes described collector lens;
Projecting lens is positioned under the described photomask, focuses on the silicon substrate that is positioned at its underpart for the diffraction light that will pass described photomask;
It is characterized in that comprise a plurality of gray areas at least at least one light hole in the described logical light unit, the gray difference of described a plurality of gray areas is transition type difference, or is great-jump-forward difference.
2. lithographic equipment as claimed in claim 1 is characterized in that, described light hole be shaped as one of part circular ring type section, fan-shaped, circular, oval, polygon or their combination, and arrange with described logical light unit center rotational symmetry.
3. lithographic equipment as claimed in claim 1 or 2 is characterized in that, the gray area in the described light hole is shaped as one of strip, circle, ring-type or their combination.
4. lithographic equipment as claimed in claim 3 is characterized in that, the gray area in the described light hole is arranged along described logical light unit center rotational symmetry.
5. lithographic equipment as claimed in claim 1 is characterized in that, described light hole is circular or oval, described gray area circle, annular or oval, and the gray area in the described light hole is coaxial with described light hole.
6. lithographic equipment as claimed in claim 1 is characterized in that, the outer ring partial coherence factor sigma of described light hole
OutScope be 0.7～0.9; The inner round portion coefficient of coherence σ of described light hole
InScope be 0.3～0.5.
7. lithographic equipment as claimed in claim 1 is characterized in that, the scope of the opening angle α of described light hole is 15 °～50 °.
8. lithographic equipment as claimed in claim 1 is characterized in that, described source light wavelength is 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
9. a logical light unit that adopts four utmost point Exposure modes, four utmost points is characterized in that, has one group at least along logical axisymmetric four utmost point light holes of light unit center in described four extremely logical light unit; Described at least one light hole comprises a plurality of gray areas at least; The gray difference of described a plurality of gray areas is transition type difference, or is great-jump-forward difference.
10. a photoetching method that adopts the described device of claim 1 is characterized in that, specifically comprises the steps:
Step S1: according to the litho pattern demand of arranging, choose the group number of described four utmost point light holes and determine orientation, the outer ring partial coherence factor sigma of described light hole
Out, inner round portion coefficient of coherence σ
InOpening angle α, relative direction angle β and light hole shape;
Step S2: choose gray areas quantity and the combination of arranging in the described light hole according to the litho pattern size demand of arranging, to adjust described incident ray exposure;
Step S3: after described incident ray passes through described logical light unit and described collector lens, form diffracted ray through described photomask diffraction;
Step S4: described diffracted ray is again through forming final required litho pattern in the photoresist on surface of silicon behind the described projecting lens;
Step S5: described silicon substrate is cured and develops.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103760639A (en) * | 2014-01-15 | 2014-04-30 | 华东师范大学 | Method and device for manufacturing multiple two-dimensional photonic crystal structures |
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| CN103760639B (en) * | 2014-01-15 | 2016-04-06 | 华东师范大学 | A kind of method and device thereof making multiple two-dimensional photon crystal structure |
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