CN103309174B - Adopt the lithographic equipment of bipolar Exposure mode, logical light unit and photoetching method - Google Patents
Adopt the lithographic equipment of bipolar Exposure mode, logical light unit and photoetching method Download PDFInfo
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- CN103309174B CN103309174B CN201310211966.5A CN201310211966A CN103309174B CN 103309174 B CN103309174 B CN 103309174B CN 201310211966 A CN201310211966 A CN 201310211966A CN 103309174 B CN103309174 B CN 103309174B
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Abstract
The present invention relates to a kind of lithographic equipment adopting bipolar Exposure mode, logical light unit and photoetching method.This lithographic equipment comprises: light source, at least have the logical light unit of one group of bipolar light hole, and collector lens, photomask and projecting lens, arrange from top to bottom successively.Wherein, containing multiple gray area at least one light hole in above-mentioned logical light unit, the gray difference of the plurality of gray area is transition type difference or is great-jump-forward difference, and diffraction light to focus on be positioned on the silicon substrate of its underpart by having the photomask of diffraction function, projecting lens by collector lens focus source light.Invention significantly improves synthetic resolution and the process window of different size litho pattern, under especially litho pattern being one direction arrangement situation, balance the feature sizes of different size litho pattern, the process costs simultaneously avoiding multiexposure, multiple exposure generation increases and quantum of output reduction.
Description
Technical field
The present invention relates to semiconductor microelectronics manufacturing equipment field, particularly relate to a kind of lithographic equipment, logical light unit and the photoetching method that adopt bipolar Exposure mode.
Background technology
Semiconductor devices makes and usually adopts photolithographic exposure mode to form required figure, and its basic step is as follows: first, resist coating on silicon chip, subsequently, high light is carved with the mask plate of circuit pattern by one piece, irradiates on a silicon substrate, and the photoresist being irradiated to part occurs rotten, use corrosive liquids cleaning silicon chip afterwards, remove rotten photoresist, inscribe on a silicon substrate and photomask same circuits patterned photo glue pattern, finally, through curing and the operation such as development, form product wafer.
In the process of whole photolithographic exposure, the performance of lithographic equipment directly has influence on the yield rate of wafer.Refer to Fig. 1 and Fig. 2, Fig. 1 is off-axis (Off-Axis) the lithographic exposure systems schematic diagram adopting the bipolar logical light Exposure mode of tradition, and Fig. 2 is the vertical view of logical light unit 12 bipolar shown in Fig. 1.As shown in the figure, incident ray 11, along necessarily departing from by bipolar logical light unit 12 and collector lens 13 with axis, forms diffraction at photomask 14 figure place, and 0 grade forms component graphics at silicon substrate 16 Surface Interference with+1 order diffraction light after projecting lens 15.Wherein, coefficient of coherence σ is the important parameter describing circular iris size, it represents the degree that projecting lens is occupied by light source, the aperture of the aperture/projecting lens of σ=collector lens, coefficient of coherence σ in and σ out and opening angle α is the important parameter describing bipolar light hole size and width, σ in σ out distance is light hole width, and α determines light hole size.
Bipolar exposure is a particular example of off-axis exposure, compares general off-axis exposure, the figure of little feature sizes has larger contrast, higher resolution and better process tolerance.But the progress continued along with manufacturing process, simple bipolar exposure gradually can not meet technology to resolution requirements, and can not ensure that the figure of different size has enough resolution, cause a part of figure to be rasterized, formed and so-calledly forbid spatial separation (Forbidden Pitch) region.Refer to Fig. 3, Fig. 3 be bipolar logical light cell size on the impact of different spaces pitch pat feature sizes, wherein critical size (Critical Dimension, be called for short CD) is more close to zero, and finished product accuracy is higher, and technology is more advanced.As shown in the figure, the curve shown in figure is about 150nm in spatial separation, and depart from zero point comparatively greatly, critical dimension errors is maximum, causes some or several interval video picture difficulty.
Refer to Fig. 4, Fig. 4 is a kind of existing improvement opportunity schematic diagram, and it adopts two method of photolithographic exposure to bipolar light hole axisymmetric along light transmitting cells center.The method effectively reduces the fluctuation of feature sizes in larger space pitch area by two to the bipolar light hole of inside and outside arrangement, reduces the risk being formed and forbid spatial separation region.
But above-mentioned two still lack dirigibility to bipolar light hole in the feature sizes of the various figure of balance and process window, be difficult to reach optimised process balance to the figure of different size.In sum, how to reach the feature sizes of various figure and the optimised process balance of process window, not only need the bipolar light hole of suitable dimension, and the exposure that the feature sizes of needs and various figure matches.This is the required target pursued of current industry.
Summary of the invention
Fundamental purpose of the present invention is the defect overcoming prior art, by comprising the bipolar light hole illumination gray difference balance exposure of many gray scales combination, bipolar light hole is thrown light on play best resolution to strengthen and the multi-functional such as process window balance.
For reaching above-mentioned purpose, technical scheme of the present invention is as follows:
Adopt a lithographic equipment for bipolar Exposure mode, comprising: light source, at least have the bipolar logical light unit in pair of light-transmissive hole, collector lens, photomask and projecting lens, arrange from top to bottom successively.Wherein, comprise multiple gray area at least one light hole in above-mentioned logical light unit, diffraction light to focus on be positioned on the silicon substrate of its underpart by having the photomask of diffraction function, projecting lens by collector lens focus source light.
Preferably, the quantity comprising gray area in the light hole of bipolar logical light unit is the region of two or more different gray scales, and the gray difference of multiple gray area is transition type difference, or is great-jump-forward difference.
Preferably, described bipolar logical light unit iuuminting hole is one group, and its shape is partial circle type section, fan-shaped, circular, oval, one of polygon or their combination, and its orientation is X-direction or Y-direction.
Preferably, the gray area shape in light hole is strip, circle, one of ring-type or their combination.
Preferably, the gray area in light hole is along logical light unit center rotational symmetry arrangement.
Preferably, when light hole is circular or oval, when gray area is circular, annular or oval, the gray area in light hole is coaxial with light hole.
Preferably, the outer perimeter section coefficient of coherence σ of light hole in described bipolar logical light unit
outscope be 0.7 ~ 0.9; Inner round portion coefficient of coherence σ
inscope be 0.3 ~ 0.5.
Preferably, the scope of the opening angle α in described bipolar logical light unit iuuminting hole is 15 ° ~ 50 °.
Preferably, described source light wavelength is 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
For reaching above-mentioned purpose, the invention provides a kind of device, technical scheme is as follows:
A kind of logical light unit with bipolar light hole; Logical light unit at least has one group along the logical axisymmetric bipolar light hole of light unit center; At least one light hole comprises multiple gray area.
Preferably, the quantity comprising gray area in bipolar light hole is the region of two or more different gray scales, and the gray difference of described multiple gray area is transition type difference, or is great-jump-forward difference.
For reaching above-mentioned purpose, the present invention also provides a kind of photoetching method, specifically comprises the steps:
Step S1: according to litho pattern arrangement demand, choose the group number of bipolar light hole, and determine the outer perimeter section coefficient of coherence σ of bipolar light hole
out, inner round portion coefficient of coherence σ
inwith opening angle α, light hole shape and orientation;
Step S2: choose gray areas quantity and arrangement combination in light hole, to adjust incident ray exposure according to litho pattern size arrangement demand;
Step S3: incident ray, by after bipolar logical light unit and collector lens, forms diffracted ray through photomask diffraction;
Step S4: form final required litho pattern in the photoresist of diffracted ray again after projecting lens in surface of silicon;
Step S5: silicon substrate is cured and develops.
As can be seen from technique scheme, the lithographic equipment of the bipolar Exposure mode of employing provided by the invention, it has the bipolar logical light unit of variable many gray scales by installing additional, exposure matching problem is made up with many gray features, balance the exposure of the feature sizes of various figure, and there is the dirigibility of process window aspect, just can meet at single exposure and carry out in photoetching process, reaching optimised process balance to variable feature sizes (namely there are the various figures in different size and direction), thus the manufacturing cost avoided owing to adopting method for multiple exposures with multiple to cause increases and produces production declining.
Accompanying drawing explanation
Fig. 1 is the off-axis lithographic exposure systems schematic diagram adopting bipolar Exposure mode in prior art
Fig. 2 is for adopting the logical light unit schematic top plan view of the off-axis lithographic exposure systems of bipolar Exposure mode in prior art shown in Fig. 1
Fig. 3 adopts the bipolar exposure of list group in system shown in Figure 1 to the influence curve of the photolithographic process capability of different spaces pitch pat feature sizes
Fig. 4 is the logical light unit schematic top plan view that in prior art, the off-axis lithographic exposure systems of the axisymmetric bipolar light hole of light unit center is led in employing two to edge
Fig. 5 is the schematic diagram that the present invention has lithographic equipment one preferred embodiment of bipolar Exposure mode
Fig. 6,7 to have the logical light unit schematic top plan view in the lithographic equipment embodiment of bipolar Exposure mode for the present invention
Fig. 8 is the schematic top plan view that the present invention has logical light unit in lithographic equipment one preferred embodiment of bipolar Exposure mode
Fig. 9 adopts in the embodiment of the present invention to have the influence curve of the bipolar Exposure mode of many gray scales to the photolithographic process capability of different spaces pitch pat feature sizes
Figure 10 is the schematic flow sheet of photoetching method one specific embodiment of the present invention
Embodiment
Some exemplary embodiments embodying feature & benefits of the present invention describe in detail in the explanation of back segment.Be understood that the present invention can have various changes in different examples, it neither departs from the scope of the present invention, and explanation wherein and being shown in essence when the use explained, and be not used to limit the present invention.
Above-mentioned and other technical characteristic and beneficial effect, by conjunction with the embodiments and accompanying drawing 5-9 be that the structure of the off-axis lithographic exposure systems of lighting system and photoetching method are described in detail to bipolar light hole of the present invention.
It should be noted that, the light source adopted in the lithographic equipment of the bipolar Exposure mode of the employing in the embodiment of the present invention can be arranged on any position of light path system, as long as it is just passable to meet off-axis photoetching exposure device needs, this source light wavelength does not do any restriction, preferably, can be 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
Refer to Fig. 5, Fig. 5 is the schematic diagram of off-axis light engraving device one preferred embodiment of the bipolar Exposure mode of the present invention.As shown in the figure, this off-axis light engraving device comprises the logical light unit 52 with bipolar light hole, the projecting lens 55 being positioned at collector lens 53 under logical light unit 52, being positioned at the photomask 54 under collector lens 53 and being positioned under photomask 54.Collector lens 53 is for assembling the source light 51 through light hole in described logical light unit 52, and photomask 54 is for the light of diffraction through collector lens 53, and projecting lens is used for the diffraction light through photomask to focus on the silicon substrate 56 being positioned at its underpart.
That is, incident ray 51, along necessarily departing from by bipolar logical light unit 52 and collector lens 53 with axis, forms diffraction at photomask 54 figure place, and 0 grade forms component graphics at silicon substrate 56 Surface Interference with+1 order diffraction light after projecting lens 55.
Under normal circumstances, the light hole in bipolar logical light unit 52 can be arranged situation according to litho pattern, selects one group, also can be chosen as rent more.Many groups light hole can be axisymmetric along logical light unit center, also can be asymmetrical.In an embodiment of the present invention, comprise multiple gray area at least one light hole in bipolar logical light unit 52, the gray difference of the plurality of gray area is transition type difference, or is great-jump-forward difference.Wherein, the cross sectional shape of light hole is partial circle type section, fan-shaped, circular, oval, one of polygon or their combination; Preferably, light hole is along the central shaft symmetry arrangement of logical light unit 52.Refer to Fig. 6, Fig. 6 is the schematic top plan view under the present invention adopts in the lithographic equipment embodiment of bipolar exposure system one group of light hole situation.As shown in the figure, if light hole is one group, so, at least one light hole, multiple gray area can be comprised, and the gray area shape being positioned at light hole can have any shape, such as bar shaped, circular, one of ring-type or their combination.Preferably, if gray area is made up of many gray areas arranged in parallel, many gray areas arranged in parallel at the two poles of the earth can also along logical light unit center rotational symmetry.Its bipolar light hole arrangement can be X-direction, as shown in Figure 6, also can be Y-direction and other any directions.If gray area is made up of multiple annular or circle, the gray area in this light hole can be coaxial with light hole.
If bipolar logical light unit 52 comprises organize light hole, gray area can be set in one group of light hole wherein as required more, also gray area can be set often organizing in light hole.Often organizing the gray area number of light hole, shape and arrangement mode etc. can identical with above-mentioned one group of light hole embodiment, does not repeat them here.
Particularly, refer to Fig. 7, Fig. 7 is the schematic top plan view under the present invention has in the lithographic equipment embodiment of bipolar Exposure mode two groups of light hole situations.As shown in the figure, bipolar logical light unit 52 comprises two groups of light holes (light hole group 71 and light hole group 72).Wherein, light hole group 71 comprises a from inside to outside continuous gray scale gray area of successively decreasing, light hole group 72 comprise four with the grayscale bar (grayscale bar 721 of logical light unit center symmetry, grayscale bar 722, grayscale bar 723 and grayscale bar 724), grayscale bar 721 to be gray-scale values be 0.6 grayscale bar, grayscale bar 722 to be gray-scale values be 1.0 grayscale bar and alternatively non-transparent bar, grayscale bar 723 is gray-scale values is the grayscale bar of 0 and complete light transmission strip, and grayscale bar 724 is grayscale bar of gray-scale value 0.3.Below in conjunction with Fig. 7 and Figure 10, principle of the present invention and effect are further described.For sake of convenience, suppose that the light hole in Fig. 7 in bipolar logical light unit 52 is one group, and along logical light unit center rotational symmetry.In the application of reality, the outer ring coefficient of coherence 0.7 ~ 0.9 of light hole and inner ring coefficient of coherence 0.3 ~ 0.5 can meet most of litho pattern demand, certainly, in extreme circumstances, and σ
incan be set to zero, namely become bipolar photolithographic exposure on axle from the bipolar photolithographic exposure of off-axis, be also operable.In theory, the opening angle α of bipolar light hole can be 0 ° to 180 °, but in actual applications, opening angle α is 15 ° to 50 ° is common example.
There are 4 gray scale striations in light hole group 72, and along logical light unit center rotational symmetry.4 bipolar gray areas in light hole, can select gray scale from shallow to deep according to logical light quantity demand from big to small.Wherein, the gray difference between multiple gray area can be excessive formula difference, as light hole group 71; Can also be great-jump-forward difference, as light hole group 72.
Particularly, refer to Fig. 8, Fig. 8 is the schematic top plan view that the present invention adopts logical light unit (comprising one group of bipolar light hole) in lithographic equipment one preferred embodiment of bipolar Exposure mode.As shown in the figure, light hole group comprises 4 groups of rotational symmetry gray areas (grayscale bar 811, grayscale bar 812, grayscale bar 813 and grayscale bar 814), and the gray difference of 4 groups of rotational symmetry gray areas is great-jump-forward difference; The gray-scale value of grayscale bar 811 is 0, is almost complete printing opacity; The gray-scale value of grayscale bar 812 is approximately 1, is and almost hinders light completely, the gray-scale value of grayscale bar 813 be transition type difference from the inside to the outside gray-scale value be 0.1 to 0.9 to increase progressively successively, the gray-scale value of grayscale bar 814 is approximately 0.8.
Refer to Fig. 9, Fig. 9 adopts the impact in the embodiment of the present invention with the photolithographic process capability on different spaces pitch pat feature sizes of the bipolar Exposure mode of many gray scales.Curve as can be seen from figure, it is less that the curve shown in figure departs from zero point in spatial separation, and critical dimension errors is much smaller compared with the curve shown in Fig. 3, which ensure that the specific region video picture of some or several intervals is normal.
In an embodiment of the present invention, lithographic equipment has the bipolar logical light unit of variable many gray scales by installing additional, exposure matching problem is made up with many gray features, balance the exposure of the feature sizes of various figure, and there is the dirigibility of process window aspect, just can meet at single exposure and carry out reaching optimised process balance in photoetching process to variable feature sizes (namely having the various figures in different size and direction), the bipolar exposure of many gray scales can provide the exposure matched with the feature sizes of various figure.
It should be noted that, the present invention has the logical light unit in the lithographic equipment of bipolar Exposure mode, can with the locus of the parts such as the lens in lithographic equipment, can change, its replacement scheme includes in the scope of the embodiment of the present invention.
Below by Figure 10, the technique that the lithographic equipment adopting the present invention to have bipolar Exposure mode carries out photoetching is described in detail.Refer to Figure 10, Figure 10 is the process chart of photoetching method one specific embodiment of the present invention, and above-mentioned photoetching process can comprise the steps:
Step S1: according to litho pattern arrangement demand, choose the group number of bipolar light hole, determine the outer perimeter section coefficient of coherence σ of bipolar light hole
outwith inner round portion coefficient of coherence σ
in, opening angle α, light hole shape and orientation; Wherein, in this step, can carry out needing to carry out initial option to the arrangement of aperture light transmission according to photolithographic exposure.
Step S2: choose gray areas quantity and arrangement combination in light hole according to litho pattern size arrangement demand, and adjustment incident ray exposure; Wherein, in this step, according to the some or several specific region in litho pattern, gray areas quantity and arrangement combination in bipolar light hole can be determined, namely photolithographic exposure is needed to the region of lay special stress on or compensation, carry out the fine setting to incident ray exposure.
Step S3: incident ray, by after logical light unit and collector lens, forms diffracted ray through photomask diffraction;
Step S4: form final required litho pattern in the photoresist of diffracted ray again after projecting lens in surface of silicon;
Step S5: silicon substrate is cured and develops.
Wherein, in step S2, incident ray can be positioned at direct projection directly over silicon substrate, also can be positioned at other positions, direct projection, reflection or refraction.Further, in actual applications, the source light wavelength of litho machine is 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
Above-describedly be only embodiments of the invention; described embodiment is also not used to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization instructions of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1. adopting a lithographic equipment for bipolar Exposure mode, for forming required figure on a silicon substrate by photolithographic exposure mode, comprising:
Light source;
At least there is the logical light unit of one group of bipolar light hole;
Collector lens, is positioned under described logical light unit, for assembling the source light through light hole described in described logical light unit;
Photomask, is positioned under described collector lens, for the light of diffraction through described collector lens;
Projecting lens, is positioned under described photomask, for the diffraction light through described photomask is focused on the described silicon substrate being positioned at its underpart; It is characterized in that, multiple gray area is at least comprised at least one light hole in described logical light unit, the gray difference of described multiple gray area is transition type difference, or be great-jump-forward difference, to choose in described light hole gray areas quantity and arrangement combination according to litho pattern size arrangement demand on described silicon substrate, thus adjust described light source and be incident to light exposure amount on described silicon substrate through described logical light unit, collector lens, photomask and projecting lens.
2. lithographic equipment as claimed in claim 1, it is characterized in that, the shape of described light hole is partial circle type section, fan-shaped, circular, oval, one of polygon or their combination, and arranges with described logical light unit center rotational symmetry.
3. lithographic equipment as claimed in claim 1 or 2, it is characterized in that, the gray area shape in described light hole is strip, circle, one of ring-type or their combination.
4. lithographic equipment as claimed in claim 3, is characterized in that, the gray area in described light hole is along described logical light unit center rotational symmetry arrangement.
5. lithographic equipment as claimed in claim 1, is characterized in that, described light hole is circular or oval, described gray area circle, annular or oval, and the gray area in described light hole is coaxial with described light hole.
6. lithographic equipment as claimed in claim 1, is characterized in that, the outer perimeter section coefficient of coherence σ of described light hole
outscope be 0.7 ~ 0.9; The inner round portion coefficient of coherence σ of described light hole
inscope be 0.3 ~ 0.5.
7. lithographic equipment as claimed in claim 1, it is characterized in that, the scope of the opening angle α of described light hole is 15 ° ~ 50 °.
8. lithographic equipment as claimed in claim 1, it is characterized in that, described source light wavelength is 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
9. one kind adopts the bipolar logical light unit of bipolar Exposure mode, for forming required figure on a silicon substrate by photolithographic exposure mode, it is characterized in that at least there is one group in described bipolar logical light unit along the logical axisymmetric bipolar light hole of light unit center; At least one light hole described at least comprises multiple gray area; The gray difference of described multiple gray area is transition type difference, or be great-jump-forward difference, to choose gray areas quantity and arrangement combination in described light hole according to litho pattern size arrangement demand on described silicon substrate, thus adjust the light exposure amount be incident on described silicon substrate.
10. adopt a photoetching method for device described in claim 1, it is characterized in that, specifically comprise the steps:
Step S1: according to litho pattern arrangement demand, choose the group number of described bipolar light hole, and determine the orientation of described light hole, outer perimeter section coefficient of coherence σ out, inner round portion coefficient of coherence σ in, opening angle α and light hole shape;
Step S2: choose gray areas quantity and arrangement combination in described light hole, to adjust incident ray exposure according to litho pattern size arrangement demand;
Step S3: incident ray, by after described logical light unit and described collector lens, forms diffracted ray through described photomask diffraction;
Step S4: form final required litho pattern in the photoresist of described diffracted ray again after described projecting lens in surface of silicon;
Step S5: described silicon substrate is cured and develops.
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| US5508803A (en) * | 1994-12-20 | 1996-04-16 | International Business Machines Corporation | Method and apparatus for monitoring lithographic exposure |
| CN1140493A (en) * | 1994-02-09 | 1997-01-15 | 米克鲁尼蒂系统工程公司 | Masks for lithographic patterning using off-axis illumination |
| CN102859440A (en) * | 2010-12-28 | 2013-01-02 | 卡尔蔡司Smt有限责任公司 | Illumination system of a microlithographic projection exposure apparatus |
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| DE102005017516B3 (en) * | 2005-04-15 | 2007-01-25 | Infineon Technologies Ag | Photolithographic imaging device and device for generating an illumination distribution |
| NL2007303A (en) * | 2010-09-23 | 2012-03-26 | Asml Netherlands Bv | Process tuning with polarization. |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1140493A (en) * | 1994-02-09 | 1997-01-15 | 米克鲁尼蒂系统工程公司 | Masks for lithographic patterning using off-axis illumination |
| US5508803A (en) * | 1994-12-20 | 1996-04-16 | International Business Machines Corporation | Method and apparatus for monitoring lithographic exposure |
| CN102859440A (en) * | 2010-12-28 | 2013-01-02 | 卡尔蔡司Smt有限责任公司 | Illumination system of a microlithographic projection exposure apparatus |
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