CN103293821A - 集成有超薄碳层的法珀腔非线性光学器件及其制备方法 - Google Patents
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105841877A (zh) * | 2015-01-13 | 2016-08-10 | 中国科学院理化技术研究所 | 一种压力检测方法、装置 |
CN109869644A (zh) * | 2019-03-05 | 2019-06-11 | 金华伏安光电科技有限公司 | 一种增强型的led光源 |
CN110715726A (zh) * | 2018-07-12 | 2020-01-21 | 中国移动通信集团设计院有限公司 | 可见光探测装置及方法 |
WO2020050008A1 (ja) * | 2018-09-03 | 2020-03-12 | ソニー株式会社 | 光学素子及び電子機器 |
CN111758068A (zh) * | 2017-12-06 | 2020-10-09 | 汉诺威激光中心 | 具有交替的折射率变化的光学元件及其应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006135906A2 (en) * | 2005-06-13 | 2006-12-21 | Massachusetts Institute Of Technology | Electro-absorption modulator device and methods for fabricating the same |
CN103091870A (zh) * | 2013-01-25 | 2013-05-08 | 中国科学院半导体研究所 | 一种谐振腔增强型石墨烯电吸收调制器 |
-
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- 2013-05-15 CN CN201310179237.6A patent/CN103293821B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006135906A2 (en) * | 2005-06-13 | 2006-12-21 | Massachusetts Institute Of Technology | Electro-absorption modulator device and methods for fabricating the same |
CN103091870A (zh) * | 2013-01-25 | 2013-05-08 | 中国科学院半导体研究所 | 一种谐振腔增强型石墨烯电吸收调制器 |
Non-Patent Citations (2)
Title |
---|
MARCO FURCHI, ET AL.: "Microcavity-integrated Graphene Photodetector", 《NANO LETTER》 * |
尹伟红、韩勤、杨晓红: "基于石墨烯的半导体光电器件研究进展", 《物理学报》 * |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105841877A (zh) * | 2015-01-13 | 2016-08-10 | 中国科学院理化技术研究所 | 一种压力检测方法、装置 |
CN105841877B (zh) * | 2015-01-13 | 2018-10-30 | 中国科学院理化技术研究所 | 一种压力检测方法、装置 |
CN111758068A (zh) * | 2017-12-06 | 2020-10-09 | 汉诺威激光中心 | 具有交替的折射率变化的光学元件及其应用 |
CN111758068B (zh) * | 2017-12-06 | 2023-05-23 | 汉诺威激光中心 | 具有交替的折射率变化的光学元件及其应用 |
CN110715726A (zh) * | 2018-07-12 | 2020-01-21 | 中国移动通信集团设计院有限公司 | 可见光探测装置及方法 |
CN110715726B (zh) * | 2018-07-12 | 2021-09-28 | 中国移动通信集团设计院有限公司 | 可见光探测装置及方法 |
WO2020050008A1 (ja) * | 2018-09-03 | 2020-03-12 | ソニー株式会社 | 光学素子及び電子機器 |
CN112639586A (zh) * | 2018-09-03 | 2021-04-09 | 索尼公司 | 光学元件及电子设备 |
JPWO2020050008A1 (ja) * | 2018-09-03 | 2021-09-02 | ソニーグループ株式会社 | 光学素子及び電子機器 |
EP3832380A4 (en) * | 2018-09-03 | 2021-09-29 | Sony Group Corporation | OPTICAL ELEMENT AND ELECTRONIC EQUIPMENT |
JP7409312B2 (ja) | 2018-09-03 | 2024-01-09 | ソニーグループ株式会社 | 光学素子及び電子機器 |
CN109869644A (zh) * | 2019-03-05 | 2019-06-11 | 金华伏安光电科技有限公司 | 一种增强型的led光源 |
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