CN103288037A - Micromechanical sensor arrangement, corresponding manufacturing method and application - Google Patents
Micromechanical sensor arrangement, corresponding manufacturing method and application Download PDFInfo
- Publication number
- CN103288037A CN103288037A CN201310061342XA CN201310061342A CN103288037A CN 103288037 A CN103288037 A CN 103288037A CN 201310061342X A CN201310061342X A CN 201310061342XA CN 201310061342 A CN201310061342 A CN 201310061342A CN 103288037 A CN103288037 A CN 103288037A
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- Prior art keywords
- sensor device
- micro mechanical
- substrate
- mechanical sensor
- mems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/025—Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
Abstract
The invention provides a micromechanical sensor arrangement, a corresponding manufacturing method and application. The micromechanical sensor arrangement comprises substrates (S1, S1 and S') provided with front side (V, V1 and V1') and back sides (R, R1 and R1'). A first microelectromechanical sensor arrangement (M1) is integrated on the front side (V, V1 and V1') and a second microelectromechanical sensor arrangement (M2) is integrated on the back sides (R, R1 and R1').
Description
Technical field
The present invention relates to a kind of micro mechanical sensor device and a kind of corresponding manufacture method and corresponding the application.
Background technology
At present, the micro mechanical sensor device is fabricated to the discrete sensor on the special chip or is fabricated to integrated sensor together with relevant analysis circuit.In integrated sensor or vertically integrated, wherein sensor is arranged on the analysis circuit, or laterally integrated, and wherein sensor is arranged in by the analysis circuit.
Horizontal when integrated, the horizontal space that the installation requirement side by side of sensor chip and ASIC analysis circuit chip increases, and must between chip, create electrical connection with high costs.When sensor chip and ASIC analysis circuit chip vertical integrated or opposite, aspect design freedom, have restriction, and the total height of structure is very important equally.
Must the experiencing semiconductor technology complicated and that constituted by many steps and then also experience sensor process for the face portion of analysis circuit setting of chip.This reduced total quantum of output and usually owing to circuit face must experience the sensor process step on the contrary sensor cover must experience semiconductor technology and cause extra cost.
This scheme have only ought for example can utilize the collaborative and corresponding technology output of high technology very Gao Shicai become with low cost.The modularization of ASIC circuit chip is changed and can not easily be realized.
At US 7,213, sensor element integrated on the dorsal part of ASIC circuit chip disclosed among 465 B2.
Summary of the invention
The present invention proposes a kind of micro mechanical sensor device according to claim 1 and a kind of corresponding manufacturing method according to claim 6 and a kind of corresponding application according to claim 10.
Preferred improvement project is the theme of dependent claims.
Allow cost to make sensor very cheaply and can realize for the privileged site saving of sensor and/or actuator or the small-scale structure mode of space-saving according to micro mechanical sensor device of the present invention and corresponding manufacture method.Simultaneously, this device has been realized modular construction, and it allows under the situation that need not high exploitation expense each chip to be substituted by other chips.
The present invention based on design be, integrated at least two function MEMS districts, monolithic ground on unique substrate, wherein these functions MEMS district is integrated on the opposed surface of substrate.Realize sensor and/or actuator respectively in function MEMS district, it is preferably responsive or react to irrelevant each other different outside stimulus.
Alternatively, another can be connected with a function MEMS district or be connected with substrate by joint method at least one in two surfaces as protecting through structurized substrate at least.
In a preferred form of implementation, magnetic sensor district and one or more inertial sensors district are arranged on the opposed surface of same substrate.
In another preferred form of implementation, pressure sensor district and one or more inertial sensors district are arranged on the opposed surface of same substrate.
Alternatively, two of substrate opposed surfaces can be connected to each other by one or more pressure contact sites.
Be to be applied in the navigation in the mobile terminal device according to a particularly preferred application possibility of micro mechanical sensor device of the present invention.
Therefore, the present invention can be to realize a plurality of MEMS functions integrated on a substrate with mode that vertical Integrated Solution with low cost is combined, and wherein silicon face only experiences two comparatively uncomplicated sensor process.Equally, simplify the structure technology and interconnection technique.
In principle, can improve pairing density (Paarungsdichte) and realize littler device thus by the monolithic of various MEMS functions on a substrate is integrated.Yet need different functional layers when having the MEMS function of different action principles and functional layer (magnetic/capacitive) usually integrated.If make the different MEMS function according to prior art on the unique surface of substrate, it is collaborative then only to obtain low-down technology usually, and forms the geometry restriction to the design of MEMS function simultaneously.In many cases, must take extreme measures to avoid disadvantageous technology to interact, for example apply interim protective layer.Output at the MEMS technology of different MEMS functions increases each other, and this causes the technology cost higher than its actual due technology cost.
The MEMS function that the present invention can realize the MEMS function, especially have a plurality of action principles and a functional layer integrated on the not homonymy of substrate virtually completely eliminated the geometry restriction of MENS function design aspect thus.If two MEMS technologies can be moved with high production, then formed with respect to cost advantage that separate, horizontal and vertical Integrated Solution.。
If two opposed surfaces of substrate are connected to each other by break-through contact hole (Durchkontakten), then only must create the extremely electrical connection on one of surface, so that can be with sensor signal to exterior guiding.Packaging technology is more favourable thus.Processing step for generation of the break-through contact hole carries out simultaneously at all devices on substrate, and therefore it can (especially under the situation of a plurality of break-through contact holes) more advantageously create than the serial contact metallization processes step when being encapsulated in two lip-deep electrical connections generally.
Description of drawings
Below set forth the present invention in more detail by the embodiment that in the indicative icon of view, illustrates.Wherein:
Fig. 1 shows the schematic cross section according to the micro mechanical sensor device of first form of implementation of the present invention;
Fig. 2 shows the schematic cross section according to the micro mechanical sensor device of second form of implementation of the present invention;
Fig. 3 shows the schematic cross section according to the micro mechanical sensor device of the 3rd form of implementation of the present invention;
Fig. 4 shows the schematic cross section according to the micro mechanical sensor device of the 4th form of implementation of the present invention; And
Fig. 5 shows the flow chart according to the manufacture method of the micro mechanical sensor device of the 5th form of implementation of the present invention.
The specific embodiment
Fig. 1 shows the schematic cross section according to the micro mechanical sensor device of first form of implementation of the present invention.
In Fig. 1, Reference numeral S indicates substrate, silicon substrate for example, and it has front side V and dorsal part R.The first function MEMS district M1 is integrated on the V of front side, and the second function MEMS district M2 is integrated on the dorsal part.Function MEMS district is interpreted as at least one sensor and/or actuator is structured in this district.K1 indicates the electric interface on the V of front side, and K2 indicates the electric interface on dorsal part R.
Can realize effectively integrated, little structure height and technology controlling and process with low cost by function MEMS district M1, the M2 this layout on opposed side V, the R of substrate S.
Fig. 2 shows the schematic cross section according to the micro mechanical sensor device of second form of implementation of the present invention.
In second form of implementation according to Fig. 2, and compare the electrically contacting portion (Kontaktierung) that changed according to the form of implementation of Fig. 1.
Especially in second form of implementation, front side V is provided with electric interface K1 ', and is provided with the electric break-through contact hole D that is centered on by separation layer I in substrate S, and it for example is made of tungsten, and substrate S extends to the first function MEMS district M1 from the second function MEMS district M2.
Can be implemented in when installing with method in this way and only must splicing ear or wiring be set at front side V.
Certainly, substrate S also can comprise a plurality of break-through contact holes, and its splicing ear according to function MEMS district M1, M2 connects.
Fig. 3 shows the schematic cross section according to the micro mechanical sensor device of the 3rd form of implementation of the present invention.
In Fig. 3, Reference numeral S1 indicates first substrate, and first substrate has the first function MEMS district M11 and has the second function MEMS district M12 at its dorsal part R1 at its front side V1.
The first function MEMS district M11 has sacrifice layer O1, O2 and function polysilicon layer F1, F2, and the nuclear cored structure shown in it for example has can be realized inertial sensor thus.
The second function MEMS district M12 has the magnetosphere heap, for example NiFe layer heap MS, and printed conductor LB, and it can be connected with the outside by contact hole KL.
This layout for example can be constructed as magnetic sensor.
This micro mechanical sensor device according to these forms of implementation for example can use at the device that is used for navigation.
Fig. 4 shows the schematic cross section according to the micro mechanical sensor device of the 4th form of implementation of the present invention.
In the 4th form of implementation according to Fig. 4, first substrate has Reference numeral S1 ' and has the first function MEMS district M11 ' at its front side V1 ', and the first function MEMS district M11 ' is corresponding to the function MEMS district M11 of the 3rd form of implementation.
The dorsal part R1 ' of first substrate S 1 ' is provided with another function MEMS district M12 ', and it can at random make up, for example with the piezoelectric transducer formal construction.
First substrate S 1 ' is connected with second substrate S 2 ' by under(-)chassis BR, wherein another function MEMS district M2 ' is arranged on the front side V2 ' of second substrate S 2 ' in this form of implementation, and wherein the dorsal part R2 ' of second substrate S 2 ' is as having chamber KA in the 3rd form of implementation.
The function MEMS district M2 ' of second substrate S 2 ' has the function MEMS district M12 identical functions with the 3rd form of implementation, the i.e. function of magnetic field sensor.
By being set, three function MEMS district M11 ', M12 ' and M2 ' (wherein substrate is used for other substrates of encapsulation) can further improve integration density in two substrates.
Fig. 5 shows the flow chart according to the manufacture method that is used for the micro mechanical sensor device of the 5th form of implementation of the present invention.
As shown in FIG. 5, be used for beginning with step SS1 according to the manufacture method of the micro mechanical sensor device of Fig. 1, in this step, the MEMS district M1 according to Fig. 1 handled.The dorsal part R of substrate S is positioned on the clamping device or is passivated at this.
In the second step SS2, substrate S is rotated.
In third step SS3, so the 2nd MEMS district M2 on the dorsal part is carried out processing step.At this time durations, front side V is on the substrate or is passivated.
After this, make micro mechanical sensor device according to Fig. 1.
Alternatively, also can carry out step SS4, wherein substrate S is connected with another substrate, for example as described in the 3rd form of implementation or the 4th form of implementation.
Although the present invention has intactly been described by means of preferred embodiment in the front, the present invention is not limited thereto, but can revise with method in many ways.
Claims (10)
1. micro mechanical sensor device has:
Substrate (S1; S1; S1 '), it has front side (V; V1; V1 ') and dorsal part (R; R1; R1 ');
Wherein at front side (V; V1; V1 ') goes up the integrated first micro mechanical sensor device (M1; M11; M11 '), and at dorsal part (R; R1; R1 ') goes up the integrated second micro mechanical sensor device (M2; M12; M12 ').
2. micro mechanical sensor device according to claim 1, wherein at least one break-through contact hole (D) extends to the second micro mechanical sensor device (M2) from the first micro mechanical sensor device (M1) by substrate (S).
3. micro mechanical sensor device according to claim 1 and 2, wherein the first micro mechanical sensor device (M11) comprises inertial sensor, and the second micro mechanical sensor device (M12) comprises magnetic field sensor.
4. one of require described micro mechanical sensor device according to aforesaid right, wherein another substrate (S2 at least; S2 ') joins front side (V to; V1; V1 ') and/or dorsal part (R; R1; R1 ') on.
5. micro mechanical sensor device according to claim 4, wherein said another substrate (S2; S2 ') is the hat wafer.
6. method for the manufacture of the micro mechanical sensor device has following steps:
First step (SS1) is wherein at substrate (S, S1; S1 ') front side (V; V1; V1 ') goes up the integrated first micro mechanical sensor device (M1; M11; M11 '; );
Second step (SS2) is wherein rotated substrate (S), and
Third step (SS3) is wherein at substrate (S; S1; S1 ') dorsal part (R; R1; R1 ') goes up the integrated second micro mechanical sensor device (M2; M12; M12 ').
7. method according to claim 6, wherein another substrate (S2 at least in the 4th step (SS4); S2 ') joins front side (V to; V1; V1 ') and/or dorsal part (R; R1; R1 ') on.
8. method according to claim 6, wherein during first step (SS1) with dorsal part (R; R1; R1 ') passivation.
9. method according to claim 6, wherein during third step (SS3) with front side (V; V1; V1 ') passivation.
10. according to a kind of application of the described micro mechanical sensor device of one of claim 1 to 5, this application is that described micro mechanical sensor device is used at the device that is used for navigation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012203135.9A DE102012203135B4 (en) | 2012-02-29 | 2012-02-29 | Micromechanical sensor arrangement and a corresponding manufacturing process and use |
| DE102012203135.9 | 2012-02-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103288037A true CN103288037A (en) | 2013-09-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310061342XA Pending CN103288037A (en) | 2012-02-29 | 2013-02-27 | Micromechanical sensor arrangement, corresponding manufacturing method and application |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2013180392A (en) |
| CN (1) | CN103288037A (en) |
| DE (1) | DE102012203135B4 (en) |
| FR (1) | FR2987355B1 (en) |
Citations (5)
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| CN101331080A (en) * | 2005-10-14 | 2008-12-24 | 意法半导体股份有限公司 | Substrate-level assembly for an integrated device, manufacturing process thereof and related integrated device |
| US20090212407A1 (en) * | 2005-05-12 | 2009-08-27 | Foster Ron B | Infinitely Stackable Interconnect Device and Method |
| CN101553425A (en) * | 2006-10-20 | 2009-10-07 | 惠普开发有限公司 | Micro electro mechanical system |
| US20100242603A1 (en) * | 2009-03-24 | 2010-09-30 | Freescale Semiconductor, Inc. | Vertically integrated mems sensor device with multi-stimulus sensing |
| CN101905853A (en) * | 2009-06-03 | 2010-12-08 | 霍尼韦尔国际公司 | Integrated micro-mechano electric system (MEMS) sensor device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH07209327A (en) * | 1994-01-18 | 1995-08-11 | Murata Mfg Co Ltd | Acceleration sensor |
| SG119185A1 (en) * | 2003-05-06 | 2006-02-28 | Micron Technology Inc | Method for packaging circuits and packaged circuits |
| DE10347215A1 (en) * | 2003-10-10 | 2005-05-12 | Bosch Gmbh Robert | Micromechanical sensor |
| DE102008003452A1 (en) * | 2008-01-08 | 2009-07-09 | Robert Bosch Gmbh | Protection system and method for separating MEMS structures |
| DE102008043271A1 (en) * | 2008-10-29 | 2010-05-06 | Robert Bosch Gmbh | Sensor arrangement for differential pressure measurement |
| JP4858547B2 (en) * | 2009-01-09 | 2012-01-18 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
| DE102009046461B4 (en) * | 2009-11-06 | 2018-06-21 | Robert Bosch Gmbh | Method for producing masked microelectromechanical components |
| JP5218497B2 (en) * | 2009-12-04 | 2013-06-26 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
-
2012
- 2012-02-29 DE DE102012203135.9A patent/DE102012203135B4/en not_active Expired - Fee Related
-
2013
- 2013-02-27 CN CN201310061342XA patent/CN103288037A/en active Pending
- 2013-02-27 FR FR1351742A patent/FR2987355B1/en not_active Expired - Fee Related
- 2013-02-28 JP JP2013038781A patent/JP2013180392A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090212407A1 (en) * | 2005-05-12 | 2009-08-27 | Foster Ron B | Infinitely Stackable Interconnect Device and Method |
| CN101331080A (en) * | 2005-10-14 | 2008-12-24 | 意法半导体股份有限公司 | Substrate-level assembly for an integrated device, manufacturing process thereof and related integrated device |
| CN101553425A (en) * | 2006-10-20 | 2009-10-07 | 惠普开发有限公司 | Micro electro mechanical system |
| US20100242603A1 (en) * | 2009-03-24 | 2010-09-30 | Freescale Semiconductor, Inc. | Vertically integrated mems sensor device with multi-stimulus sensing |
| CN101905853A (en) * | 2009-06-03 | 2010-12-08 | 霍尼韦尔国际公司 | Integrated micro-mechano electric system (MEMS) sensor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102012203135B4 (en) | 2020-11-12 |
| FR2987355A1 (en) | 2013-08-30 |
| FR2987355B1 (en) | 2016-09-30 |
| JP2013180392A (en) | 2013-09-12 |
| DE102012203135A1 (en) | 2013-08-29 |
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