CN103281039A - E-type power amplifier for controlling difference between discharge branches in delayed mode - Google Patents
E-type power amplifier for controlling difference between discharge branches in delayed mode Download PDFInfo
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- CN103281039A CN103281039A CN2013101297839A CN201310129783A CN103281039A CN 103281039 A CN103281039 A CN 103281039A CN 2013101297839 A CN2013101297839 A CN 2013101297839A CN 201310129783 A CN201310129783 A CN 201310129783A CN 103281039 A CN103281039 A CN 103281039A
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Abstract
The invention discloses an E-type power amplifier for controlling a difference between discharge branches in a delayed mode. According to the power amplifier, transistors which are connected in parallel are arranged on a differential branch to form the current discharge branches, and an inductor is connected to the signal control end of each discharge branch so that a control signal can produce phase delay. The auxiliary discharge branches are arranged so that influence of parasitic resistance can be reduced and efficiency of the power amplifier can be improved. The control signal is delayed through the inductors, and the power loss of the transistors at different times can be optimized. The E-type power amplifier has the advantages of being simple in structure, high in efficiency, low in manufacturing cost and capable of being integrated on a chip conveniently.
Description
Technical field
The invention belongs to technical field of radio frequency integrated circuits, relate to a kind of power amplifier, be specifically related to a kind of difference E power-like amplifier that postpones the controlled discharge branch road that adopts.
Background technology
In Modern wireless communication, power amplifier (Power Amplifier) is one of nucleus module of radio frequency part, is responsible for signal is amplified, and launches by antenna, realizes wireless transmission of signal.A lot of wireless communication protocol standards all require higher power output, and therefore high efficiency power amplifier conserve energy consumption effectively especially for battery powered apparatus, can prolong battery service time effectively.Divided by DC consumption power, obtaining power added efficiency (Power Added Efficiency) is the important indicator of weighing efficiency power amplifier with the difference of power output and input power.
According to the difference of mode of operation, power amplifier can be divided into linear power amplifier and nonlinear power amplifier.Linear power amplifier can be divided into category-A, category-B and AB class etc., and its output linearity is better, but theoretical efficiency is lower.And nonlinear power amplifier can have higher efficient, as D class, E power-like amplifier, bigger application potential is arranged in mobile device.
Accompanying drawing 1 is a typical E power-like amplifier schematic diagram.The main points of its design are the capacitor and inductor network couplings by output, make as power output tube M
1Flow through electric current I
dThe time, its output end voltage V
dBe zero; And output voltage V
dWhen non-vanishing, the electric current I of passing through
dBe zero.Electric current and voltage figure when Fig. 5 has represented an E power-like amplifier job, Fig. 5 (a) represents input signal, the electric current of Fig. 5 (b) expression power tube.Shown in Fig. 5 (c), ideally, power output tube does not consume extra power consumption, and the power added efficiency of whole power-amplifier stage can reach 100%.But because always can there be voltage and current simultaneously in the influence of all non-ideal factors on the power output tube, thereby consumes extra power consumption shown in Fig. 5 (d), cause the E power-like amplifier to be difficult to the efficient that reaches desirable.
Integrated power amplifier is the important goal of radio frequency chip design on standard complementary metal oxide semiconductors (CMOS) (CMOS) technology, can reduce system complexity and manufacturing cost effectively.Improve power output and efficient that supply voltage can effectively improve power amplifier.But along with the continuous progress of technological development, transistorized operating voltage and puncture voltage constantly reduce, and make the Designing power amplifier difficulty improve constantly.Have to when simultaneously the non-ideal characteristic of metal-oxide semiconductor transistor (MOS) also makes Designing power amplifier in the face of complicated situation more.
Traditional difference E power-like amplifier can utilize cascodes to slow down the pressure that puncture voltage is brought, and improves the operating voltage of power amplifier.But the structure of cascade can cause conducting resistance to increase greatly, transistor efferent duct voltage is raise, thereby consume extra power consumption, lowers efficiency.
Summary of the invention
At the efficiency of E power-like amplifier on the standard CMOS process, the present invention proposes a kind of difference E power-like amplifier that postpones the controlled discharge branch road that adopts, and improve the power added efficiency of power amplifier by optimal design.
For achieving the above object, the technical solution used in the present invention is as follows:
A kind of difference E power-like amplifier that postpones the controlled discharge branch road that adopts is characterized in that, at the difference branch road transistor in parallel is set and forms the current drain branch road, goes into inductance in the signal controlling termination of the branch road of releasing and makes control signal produce phase delay.
Add parallel transistor respectively so that extra current drain branch road to be provided at two difference branch roads, can fall cascade effectively and join transistorized conducting resistance, thereby voltage on the reduction cascade transistor reduces the extra power consumption that consumes on the cascode transistors then.On this basis, by going into an inductance in the signal controlling termination of difference branch road, make control signal phase delay occur.By the size of optimal design inductance, can regulate control signal time of delay, thereby make the conducting power consumption between input signal rising edge and trailing edge, make rational compromise, to obtain optimum efficient.
The transistor of difference branch road can be selected two-stage or multistage cascodes.Input signal is carried on the transistor of least significant end, and other grades transistor need be selected suitable bias voltage according to operating voltage and puncture voltage.
In the branch road of releasing of parallel connection, according to the cascade progression of difference branch road, can adopt the structure of single transistor or cascode stage.Each bar is released in the branch road the transistorized control signal of least significant end from another corresponding in differential configuration branch road of releasing.Tree transistors is more than two-stage if release, and other transistorized bias voltages design according to the transistor of the relevant position of difference branch road.
Article two, two transistors of least significant end of branch road of releasing have been formed the feedback arrangement of negative resistance form, easily with generation resonance phenomena such as integrated capacitance.By regulating transistorized size etc., can regulate its resonance frequency, make its frequency consistent with the power amplifier operating frequency, thereby can improve the efficient of power amplifier.
The inductance that is used for delayed control signal is connected between the transistorized control voltage of these two least significant ends of the branch road of releasing.Because the hysteresis of inductance can cause control signal to occur postponing, thereby make the open and close time of the tree transistors of releasing and difference branch road occur postponing.By optimizing time error, select optimum inductance value.Can improve the efficient of power amplifier so that the extra power consumption of transistor dissipation reaches minimum.
The present invention utilizes the difference E power amplifier structure of cascade to improve the operating voltage of power amplifier; Utilize the auxiliary branch road of releasing to reduce the influence of dead resistance, improve the efficient of power amplifier; Utilize inductance that control signal is postponed, to optimize transistor in the power loss of different time.Compare with the existing technology that improves efficiency power amplifier, the invention has the advantages that:
1) simple in structure: compare with typical differential power amplifier structure, this programme has only increased several transistors and an inductance, and circuit structure is simple;
2) efficient height: by application and the design optimization of New Scheme, can effectively reduce the extra power consumption of transistor dissipation, improve efficiency power amplifier significantly;
3) low cost of manufacture: adopt standard technology, do not need existing technology is done any extra process, can not increase extra technology manufacturing cost;
4) be convenient at sheet integrated: adopt CMOS technology, can be used as radio-frequency module of finishing of an independent module and other radio-frequency integrated circuit modules composition, be integrated on the same chips.
Description of drawings
Fig. 1 is typical E power-like amplifier structure chart.
Fig. 2 a is the power amplifier structure figure of traditional difference cascode.
Fig. 2 b is the E class differential power amplifier structure chart of the branch road of releasing of employing cascade level structure of the present invention.
Fig. 2 c is the E class differential power amplifier structure chart of the branch road of releasing of employing single transistor of the present invention.
Fig. 3 is the concrete structure figure of E power-like amplifier shown in Fig. 2 b.
Fig. 4 is the operating voltage schematic diagram of three grades of cascode transistors of the present invention.
Fig. 5 is the current/voltage schematic diagram of E power-like amplifier.
Fig. 6 is the driving stage structure chart of Fig. 3 intermediate power amplifier.
Embodiment
Below by specific embodiment, and conjunction with figs., the present invention is described in detail.
Fig. 2 a is the power amplifier structure figure of traditional difference cascode, and Fig. 2 b and Fig. 2 c are new E class differential power amplifier structure charts of the present invention, have wherein increased extra current drain branch road and inductance L n.In the branch road of releasing of parallel connection, cascade progression according to the difference branch road, can adopt the structure of single transistor or cascode stage, what adopt as the branch road of releasing of Fig. 2 b is the structure of cascode stage, and what the branch road of releasing of Fig. 2 c adopted is single transistor (namely only keeping that transistor of orlop).Following emphasis describes with the branch road of releasing of the structure of employing cascode stage.
Fig. 3 is the concrete structure figure of the E class differential power amplifier shown in Fig. 2 b.As shown in the drawing, the cascodes of being made up of M1, M3, M5 and M2, M4, M6 is as the difference branch road.Wherein transistor M1, the M2 of least significant end can select low threshold transistor, to improve circuit working speed, reduce conducting resistance.Single-ended input signal transfers differential signal to by balance-nonbalance converter (Balun), is connected on M1, the M2 after amplifying by driving stage.
Voltage schematic diagram when Fig. 4 has described the work of E power-like amplifier, wherein, when Vpeak was power amplifier work, the crest voltage that power tube drain terminal place occurs can reach supply voltage more than 3 times, V
B1-V
TH2Be least significant end transistor M1, the maximum voltage of 2 drain terminals, V
B2-V
TH3Be M3, the maximum voltage of 4 drain terminals.In design, need each transistorized bias voltage of appropriate design.M3, M4, M5, M6 select the higher high threshold pipe of puncture voltage, so that improve operating voltage.In the CMOS technology of dark N trap was arranged, M3, M4, M5, M6 should select substrate terminal is linked to each other with the source end, thereby can reduce the voltage drop between grid and substrate, prevented voltage breakdown.The source voltage terminal of M3, M4 should be less than the source drain breakdown voltage of M1, M2, therefore the bias voltage of M3, M4 is chosen near the voltage than the high threshold value of this puncture voltage, thereby guarantee before source voltage terminal reaches puncture voltage, to end at M3, M4 transistor, avoided the puncture of M1, M2.The biasing of M5, M6 is selected also in like manner.
For the structure of three grades of cascades shown in Figure 3, the branch road of releasing has been selected the two-stage cascodes be made up of M7, M9 and M8, M10.Similar with the difference branch road, M7, M8 have selected low threshold value pipe, and M9, M10 have selected the high threshold pipe.The biasing of M9, M10 is identical with M3, M4, and the bias voltage of M7 and M8 has been formed a negative resistance structure from the other side's drain terminal.
The inductance L n that is used for delayed control signal is connected between the grid of M7, M8 two transistor.Shown in Fig. 5 (e), after adding inductance, when the conducting of M1 correspondence branch road, the corresponding branch road of M2 ends, and output voltage rises, and M4, M6 can end successively.After reaching crest voltage, output voltage begins to descend, because the capacitive coupling effect can cause the also corresponding decline of M8 drain terminal voltage.Therefore voltage can take place and change in the negative resistance structure that M7, M8 form, and makes transistor M7 end, and the branch road of releasing that M7 and M9 form can be closed in advance, the current drain when having influenced conducting, thus brought extra power consumption penalty.After adding inductance, can postpone the time that the branch road of releasing is closed, in the hope of reducing power consumption.But then, the opening time of the branch road of releasing also can postpone thereupon, thereby brings extra power consumption penalty in other half period.Therefore when design, must be by the power consumption situation under the emulation different induction value situation, the inductance value of correspondence when obtaining optimum efficiency.
As shown in Figure 3, inductance L 1 is the radio-frequency choke in the E power-like amplifier, and inductance L f and capacitor C f, C1 have formed resonant network, and in order to control the voltage current waveform on the power tube, inductance L 2 and capacitor C 2 are impedance inverting network.The design alternative of these passive components is identical with the traditional E power-like amplifier, no longer does extra elaboration.Final balance-the nonbalance converter (Balun) that uses synthesizes single-ended signal with differential signal.
Driving stage has been selected the structure of D class A amplifier A among Fig. 3, is square wave in order to the sine wave shaped with input.As shown in Figure 6, adopt the inverter cascade of two-stage AC coupled, by selecting suitable bias voltage, can obtain output duty cycle and be 50% square-wave signal.
Above embodiment is only in order to technical scheme of the present invention to be described but not limit it; those of ordinary skill in the art can make amendment or is equal to replacement technical scheme of the present invention; and not breaking away from the spirit and scope of the present invention, protection scope of the present invention should be as the criterion so that claim is described.
Claims (9)
1. one kind is adopted the difference E power-like amplifier that postpones the controlled discharge branch road, it is characterized in that, at the difference branch road transistor in parallel is set and forms the current drain branch road, goes into inductance in the signal controlling termination of current drain branch road and makes control signal produce phase delay.
2. power amplifier as claimed in claim 1, it is characterized in that: the transistor of described difference branch road is two-stage or multistage cascodes; Described current drain branch road adopts the structure of single transistor or cascode stage.
3. power amplifier as claimed in claim 2 is characterized in that: each bar is released in the branch road the transistorized control signal of least significant end from another corresponding in differential configuration branch road of releasing; Tree transistors is more than two-stage if release, and other transistorized bias voltages design according to the transistor of the relevant position of difference branch road.
4. power amplifier as claimed in claim 2 is characterized in that: the feedback arrangement of the transistor composition negative resistance form of the least significant end of the branch road of releasing.
5. power amplifier as claimed in claim 2 is characterized in that: input signal is carried on the transistor of least significant end of difference branch road, and other grades transistor of difference branch road is selected suitable bias voltage according to operating voltage and puncture voltage.
6. power amplifier as claimed in claim 2 is characterized in that: described inductance is connected between the transistorized control voltage of two least significant ends of the branch road of releasing.
7. power amplifier as claimed in claim 2 is characterized in that: the transistor of least significant end is selected low threshold transistor in the described difference branch road and in the described branch road of releasing, and other transistor is selected high-threshold transistors.
8. power amplifier as claimed in claim 2, it is characterized in that: single-ended input signal transfers differential signal to by balance-nonbalance converter, is connected on the transistor of least significant end in the described difference branch road after amplifying by driving stage.
9. power amplifier as claimed in claim 1 or 2 is characterized in that: driving stage adopts the structure of D class A amplifier A, is square wave in order to sine wave shaped that will input.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310129783.9A CN103281039B (en) | 2013-04-15 | 2013-04-15 | A kind of Time delay control that adopts is released the difference E power-like amplifier of branch road |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310129783.9A CN103281039B (en) | 2013-04-15 | 2013-04-15 | A kind of Time delay control that adopts is released the difference E power-like amplifier of branch road |
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| CN103281039A true CN103281039A (en) | 2013-09-04 |
| CN103281039B CN103281039B (en) | 2016-04-27 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180902A (en) * | 2020-02-13 | 2020-05-19 | 惠州Tcl移动通信有限公司 | MIMO system, method for distinguishing signals by MIMO system and mobile terminal thereof |
| CN113162564A (en) * | 2021-03-25 | 2021-07-23 | 成都知融科技股份有限公司 | CMOS power amplifier with on-chip temperature compensation function |
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| US20030169105A1 (en) * | 2002-03-11 | 2003-09-11 | Seyed-Ali Hajimiri | Cross-differential amplifier |
| CN101697478A (en) * | 2009-10-29 | 2010-04-21 | 华东师范大学 | Full-difference E-type power amplifier |
| US7935990B2 (en) * | 2000-09-12 | 2011-05-03 | Black Sand Technologies, Inc. | RF power amplifier and method for packaging the same |
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2013
- 2013-04-15 CN CN201310129783.9A patent/CN103281039B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7935990B2 (en) * | 2000-09-12 | 2011-05-03 | Black Sand Technologies, Inc. | RF power amplifier and method for packaging the same |
| US20030169105A1 (en) * | 2002-03-11 | 2003-09-11 | Seyed-Ali Hajimiri | Cross-differential amplifier |
| CN101697478A (en) * | 2009-10-29 | 2010-04-21 | 华东师范大学 | Full-difference E-type power amplifier |
Non-Patent Citations (4)
| Title |
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| KING CHUN TSAI等: "A 1.9GHZ 1W CMOS class-E power amplifier for wireless communications", 《IEEE JOURNAL OF SOLID-STATE CIRCUITS》 * |
| 苏黎等: "一种高效率低谐波失真E类射频功率放大器的设计", 《国外电子测量技术》 * |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180902A (en) * | 2020-02-13 | 2020-05-19 | 惠州Tcl移动通信有限公司 | MIMO system, method for distinguishing signals by MIMO system and mobile terminal thereof |
| CN113162564A (en) * | 2021-03-25 | 2021-07-23 | 成都知融科技股份有限公司 | CMOS power amplifier with on-chip temperature compensation function |
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| CN103281039B (en) | 2016-04-27 |
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