CN103276451B - 一种消除InAs单晶表面电荷积累层的热处理方法 - Google Patents

一种消除InAs单晶表面电荷积累层的热处理方法 Download PDF

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CN103276451B
CN103276451B CN201310148741.XA CN201310148741A CN103276451B CN 103276451 B CN103276451 B CN 103276451B CN 201310148741 A CN201310148741 A CN 201310148741A CN 103276451 B CN103276451 B CN 103276451B
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CN103276451A (zh
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邓惠勇
郭建华
邱锋
张云
胡古今
俞国林
戴宁
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Shanghai Institute of Technical Physics of CAS
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Abstract

本发明公开了一种消除InAs单晶表面电荷积累层的热处理方法，该方法包括快速退火与空气淬火二个步骤。首先将InAs样品放置于快速退火炉中，接着立即将温度升至退火温度，并保温一段时间，最后迅速将样品从退火炉中取出放置于烧杯中，待样品冷却至室温即可。本发明的优点是：方法简单、有效可行。

Description

一种消除InAs单晶表面电荷积累层的热处理方法
技术领域
本发明涉及一种钝化InAs单晶表面的方法，特别适合于消除InAs单晶表面的电荷积累层。
背景技术
由于原子的周期性排列终止于晶体的表面，半导体的表面含有大量未配对的悬挂键，或者由于掺杂等其它的原因产生表面缺陷，在半导体的表面形成了表面态，大量的表面态形成的表面能级组成了表面能带。表面能带一般位于半导体能带的中间，依据表面态的施主或受主属性，半导体的能带在其表面发生弯曲，在表面形成电荷积累层或耗尽层，它们对半导体器件的光电性质产生不可忽视的影响，例如，表面态可以导致金属与半导体之间的表面势垒钉扎现象，使得金属不易与半导体形成欧姆接触，影响器件的I-V特性，因此，有必要消除表面态的影响。
与其它的III-V族化合物半导体相比较，如GaAs、InP等，无论是n型或者p型的InAs表面，半导体的能带在表面均向下弯曲，在InAs的表面形成一层电荷积累层（参见：J.R.Weber et al,APPLIED PHYSICS LETTERS97,192106,2010），如何消除表面电荷积累层对InAs单晶薄膜的光电性质的影响是一个必须克服的科学技术难题。
发明内容
本发明的目的是提供一种消除InAs单晶的表面电荷积累层的热处理方法，通过快速退火与空气淬火工艺，在其表面形成一层In2O3与As单质的混合层，Raman实验结果表面，该混合层可以消除晶体表面的电荷积累层。
本发明的技术方案：
一种消除InAs单晶表面电荷积累层的热处理方法，包括如下步骤：
①将InAs样品放置于快速退火炉中，设置好退火温度与保温时间；
②将温度迅速升至（30秒钟）退火温度（450℃），并保温一段时间（5分钟）；
③保温结束后，立即将样品从退火炉中取出放置于烧杯中，待样品冷却至室温即可。
本发明的技术效果：工艺简单、效果明显。本发明涉及到到的设备是常规的退火设备，无须氢气或其它惰性气氛，处理条件不苛刻，工艺简单、成本低，测试结果表明该方法消除了晶片表面的电荷积累层。
附图说明
图1为本发明的工艺流程图。
图2为本发明的样品在热处理前后的Raman光谱。
具体实施方式
下面结合附图和具体的实施例来详细阐述利用本发明消除n型InAs单晶表面的电荷积累层的方法。
图1为本发明的工艺流程图，具体包括如下步骤：
①打开退火炉，开启风扇与水冷装置，设置好退火温度与保温时间，将InAs样品放置于快速退火炉中；
②开启退火炉的加热开关，样品在30秒钟内迅速升至450℃，并保温5分钟；
③保温结束后，立即将样品从退火炉中取出放置于烧杯中，待样品冷却至室温即可。
④测试样品的Raman光谱，如图2所示。为了比较，图2也给出了退火前晶片（虚线）和热处理温度为400℃的样品的Raman光谱。可以发现，450℃热处理后，来自表面电荷积累层的纵向光学声子（LO）散射消失了，依据文献的结果（参见：S.Buchner et al,PHYSICAL REVIEW LETTERS33,908,1974），这表明本发明的方法消除了晶片表面的电荷积累层。

Claims (1)

1.一种消除InAs单晶表面电荷积累层的热处理方法，其特征在于：该方法包括快速退火与空气淬火二个步骤，首先将InAs样品放置于快速退火炉中，接着立即在30秒钟时间内将温度升至450℃的退火温度，保温5分钟，然后迅速将样品从退火炉中取出放置于烧杯中，待样品冷却至室温即可。
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