CN103268859A - 一种igbt芯片背面制造方法 - Google Patents
一种igbt芯片背面制造方法 Download PDFInfo
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- CN103268859A CN103268859A CN2012104028346A CN201210402834A CN103268859A CN 103268859 A CN103268859 A CN 103268859A CN 2012104028346 A CN2012104028346 A CN 2012104028346A CN 201210402834 A CN201210402834 A CN 201210402834A CN 103268859 A CN103268859 A CN 103268859A
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- igbt chip
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 56
- 230000008569 process Effects 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 19
- 238000002347 injection Methods 0.000 claims abstract description 16
- 239000007924 injection Substances 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 230000004913 activation Effects 0.000 claims abstract description 4
- 238000000137 annealing Methods 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 230000003213 activating effect Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000008439 repair process Effects 0.000 claims description 2
- 238000001994 activation Methods 0.000 abstract description 3
- 238000005457 optimization Methods 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 238000000605 extraction Methods 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000006722 reduction reaction Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 9
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Abstract
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Priority Applications (1)
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CN201210402834.6A CN103268859B (zh) | 2012-10-22 | 2012-10-22 | 一种igbt芯片背面制造方法 |
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CN201210402834.6A CN103268859B (zh) | 2012-10-22 | 2012-10-22 | 一种igbt芯片背面制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN103268859A true CN103268859A (zh) | 2013-08-28 |
CN103268859B CN103268859B (zh) | 2015-02-18 |
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CN201210402834.6A Active CN103268859B (zh) | 2012-10-22 | 2012-10-22 | 一种igbt芯片背面制造方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101789375A (zh) * | 2010-02-09 | 2010-07-28 | 清华大学 | 一种非穿通型绝缘栅双极晶体管薄片背面制作工艺 |
CN102110605A (zh) * | 2009-12-24 | 2011-06-29 | 北大方正集团有限公司 | 绝缘栅双极型晶体管芯片制造方法及装置 |
US20110300707A1 (en) * | 2004-03-16 | 2011-12-08 | Infineon Technologies Ag | Metallization and Its Use In, In Particular, an IGBT or a Diode |
CN102420133A (zh) * | 2011-09-30 | 2012-04-18 | 上海华虹Nec电子有限公司 | Igbt器件的制造方法 |
CN102741982A (zh) * | 2010-02-04 | 2012-10-17 | 富士电机株式会社 | 用于制造半导体器件的方法和用于制造半导体器件的装置 |
-
2012
- 2012-10-22 CN CN201210402834.6A patent/CN103268859B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110300707A1 (en) * | 2004-03-16 | 2011-12-08 | Infineon Technologies Ag | Metallization and Its Use In, In Particular, an IGBT or a Diode |
CN102110605A (zh) * | 2009-12-24 | 2011-06-29 | 北大方正集团有限公司 | 绝缘栅双极型晶体管芯片制造方法及装置 |
CN102741982A (zh) * | 2010-02-04 | 2012-10-17 | 富士电机株式会社 | 用于制造半导体器件的方法和用于制造半导体器件的装置 |
CN101789375A (zh) * | 2010-02-09 | 2010-07-28 | 清华大学 | 一种非穿通型绝缘栅双极晶体管薄片背面制作工艺 |
CN102420133A (zh) * | 2011-09-30 | 2012-04-18 | 上海华虹Nec电子有限公司 | Igbt器件的制造方法 |
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CN103268859B (zh) | 2015-02-18 |
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Address after: 102209 18 Riverside Avenue, Changping District science and Technology City, Beijing Co-patentee after: STATE GRID CORPORATION OF CHINA Patentee after: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. Address before: 102209 Beijing Changping District future science and Technology North District Smart Grid Research Institute Co-patentee before: State Grid Corporation of China Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Address after: 102209 Beijing Changping District future science and Technology North District Smart Grid Research Institute Co-patentee after: STATE GRID CORPORATION OF CHINA Patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Address before: 102211 Beijing Changping District small Tang Shan town big east stream Village Road 270 (future science and technology city) Co-patentee before: State Grid Corporation of China Patentee before: STATE GRID SMART GRID Research Institute |
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Effective date of registration: 20191028 Address after: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Patentee after: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. Address before: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Co-patentee before: STATE GRID CORPORATION OF CHINA Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. |
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Effective date of registration: 20200109 Address after: 211106 Building 2, No.19, Chengxin Avenue, Jiangning Economic and Technological Development Zone, Nanjing City, Jiangsu Province (Jiangning Development Zone) Patentee after: Nanruilianyan Semiconductor Co.,Ltd. Address before: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. |
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Denomination of invention: Manufacturing method of back of IGBT (Insulated Gate Bipolar Transistor) chip Effective date of registration: 20200528 Granted publication date: 20150218 Pledgee: NARI TECHNOLOGY Co.,Ltd. Pledgor: Nanruilianyan Semiconductor Co.,Ltd. Registration number: Y2020980002584 |
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