CN103258924B - A kind of special fixture of pad of LED wafer - Google Patents
A kind of special fixture of pad of LED wafer Download PDFInfo
- Publication number
- CN103258924B CN103258924B CN201310180437.3A CN201310180437A CN103258924B CN 103258924 B CN103258924 B CN 103258924B CN 201310180437 A CN201310180437 A CN 201310180437A CN 103258924 B CN103258924 B CN 103258924B
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- Prior art keywords
- wafer
- pad
- drain channel
- trenches
- inches
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- Expired - Fee Related
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention discloses a kind of special fixture of pad of LED wafer, comprise the acid and alkali-resistance PTFE plate of two pieces of same sizes, the front of every block PTFE plate processes several 2 inches of wafer trenches, reverse side processes several 4 inches of wafer trenches, each wafer trenches central authorities are all designed with "+" type drain channel, described drain channel yi word pattern is mutually through, and drain channel cell wall is provided with the inclination of certain angle, and the tow sides of two blocks of PTFE plates are fixed together.Fixture of the present invention, not only shortens the pad time greatly, improves pad efficiency, and fast wafer can be taken out (design is got sheet angle right-hand man and can conveniently be picked and placeed) from fixture, improves and gets sheet speed, be reduced in the possibility broken into pieces by wafer when getting sheet.
Description
Technical field
The present invention relates to LED and manufacture field, in particular, relate to a kind of special fixture of pad of LED wafer.
Background technology
In modern LED manufacturing process, some wafer is on even after photoresist, when removing photoresist process through exposing, developing, toast, carry out again, during due to condition generation slight changes such as process conditions or liquids (photoresist, developer solution, stripper etc.), portioned product is caused to occur bad, need artificial pad by its wiped clean, need during wiping to use special wiping fixture.
At present, most domestic LED makes industry does not also have professional pad fixture, and major part is placed on left hand by wafer, and the right hand takes non-dust cloth wiping wafer.Only have several family to have simple pad fixture, there is many defects in this kind of fixture design, one is get sheet mode inconvenience, just considers dexterous mode during design; Two is have residual liquid between wafer backside and fixture substrate, there is absorption affinity and is unfavorable for getting sheet, sometimes get sheet very difficult when getting sheet, and strength is large a little a bit just may be broken into pieces wafer.
Summary of the invention
The present invention is directed to above-mentioned problems of the prior art, there is provided a kind of pad of LED wafer special fixture, not only solve artificial all with efficiency during hand pad low with wafer often by the problem broken into pieces and two inches and four inches of compatible problems of pad fixture, and solve when getting sheet and there is absorption affinity between wafer backside and substrate, get sheet difficult problem.
For achieving the above object, the technical solution adopted in the present invention is as follows:
A kind of special fixture of pad of LED wafer, comprise the acid and alkali-resistance PTFE plate of two pieces of same sizes, the front of every block PTFE plate processes several 2 inches of wafer trenches, reverse side processes several 4 inches of wafer trenches, each wafer trenches central authorities are all designed with "+" type drain channel, described drain channel yi word pattern is mutually through, and drain channel cell wall is provided with the inclination of certain angle, and the tow sides of two blocks of PTFE plates are fixed together.
The tow sides of described two blocks of PTFE plates are linked together by fixed support.
The front of described PTFE plate processes 24 2 inches of wafer trenches, and reverse side processes 64 inches of wafer trenches.
The angle of inclination of described drain channel cell wall is greater than 1 °.
The little 0.05mm of thickness of described wafer trenches depth ratio wafer, the degree of depth of drain channel is between 2mm--5mm.
Described drain channel end is all processed with the leakage fluid dram that diameter is 3.5mm.
Increase the PTFE film of thickness 3mm in the bottom of two blocks of PTFE plates, protection below one block of plate is not worn.
The beneficial effect that technical solution of the present invention is brought is as follows:
One, after using new pad fixture, pad efficiency is 6 times of manual pad, greatly shortens the pad time, improves pad efficiency.
Two, after using new pad fixture, fast wafer can be taken out from fixture, improve and get sheet speed, be reduced in the possibility broken into pieces by wafer when getting sheet.
Accompanying drawing explanation
Fig. 1 is the Facad structure schematic diagram of fixture provided by the present invention;
Fig. 2 is the inverse layer structure schematic diagram of fixture provided by the present invention.
Embodiment
Below embodiments of the invention are elaborated: the present embodiment is implemented under premised on technical solution of the present invention, give detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1 and Figure 2, select the acid and alkali-resistance that two block lengths are 350mm, width is 221mm, thickness is 35mm, high temperature resistant PTFE plate 1, the positive and negative of every block PTFE plate 1 all carries out Milling Process, and front is processing 24 2 inches of wafer trenches 2, and the back side is processing 64 inches of wafer trenches 2.The little 0.05mm of thickness of the depth ratio wafer of wafer trenches 2.Each wafer trenches central authorities are designed with "+" type drain channel 3, and the yi word pattern groove on same direction is mutually through.The degree of depth of drain channel 4 is 2mm--5mm, and cell wall has certain angle of inclination (angle of inclination > 1 °), is conducive to residual liquor discharge.The degree of depth of getting sheet position is 2mm, and the requirement for horizontality of wafer trenches bottom land is high.Can carry out left and right when picking and placeing wafer simultaneously, the absorption affinity produced because there is liquid between wafer backside and fixture floor can not being produced simultaneously, when getting sheet, wafer being broken into pieces.
The PTFE plate 1 of above-mentioned tow sides all completion of processing is fixed on 316L stainless steel fixed support with 316L stainless steel screw; fixture front is 2 inches of wafer trenches 2; the back side is 4 inches of wafer trenches 2, and bottom can also increase the PTFE thin plate of thickness 3mm, and protection below one block of plate is not worn.If when fixture positive and negative all occurs that certain wearing and tearing can not use, then two blocks of PTFE plates are unloaded installation reverse side, so still 2 inches and 4 inches can compatiblely use.
During use, wear PE gloves by fixture wiped clean, from left to right place wafer successively from top to bottom, dip stripper pad in certain sequence with non-dust cloth, get sheet in order, fixture is cleaned up and replaces.
The foregoing is only embodiments of the invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the special fixture of the pad of a LED wafer, it is characterized in that, comprise the acid and alkali-resistance PTFE plate of two pieces of same sizes, the front of every block PTFE plate processes several 2 inches of wafer trenches, reverse side processes several 4 inches of wafer trenches, each wafer trenches central authorities are all designed with "+" type drain channel, and described drain channel yi word pattern is mutually through, and the tow sides of two blocks of PTFE plates are fixed together.
2. the special fixture of the pad of LED wafer according to claim 1, is characterized in that, the tow sides of described two blocks of PTFE plates are linked together by fixed support.
3. the special fixture of the pad of LED wafer according to claim 1, is characterized in that, the front of described PTFE plate processes 24 2 inches of wafer trenches, and reverse side processes 64 inches of wafer trenches.
4. the special fixture of the pad of LED wafer according to claim 1, is characterized in that, the angle of inclination of described drain channel cell wall is greater than 1 °.
5. the special fixture of the pad of LED wafer according to claim 1, is characterized in that, described drain channel end is all processed with the leakage fluid dram that diameter is 3.5mm.
6. the special fixture of the pad of LED wafer according to claim 4, is characterized in that, the little 0.05mm of thickness of described wafer trenches depth ratio wafer, and the degree of depth of drain channel is between 2mm--5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310180437.3A CN103258924B (en) | 2013-05-16 | 2013-05-16 | A kind of special fixture of pad of LED wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310180437.3A CN103258924B (en) | 2013-05-16 | 2013-05-16 | A kind of special fixture of pad of LED wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103258924A CN103258924A (en) | 2013-08-21 |
| CN103258924B true CN103258924B (en) | 2015-12-02 |
Family
ID=48962736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310180437.3A Expired - Fee Related CN103258924B (en) | 2013-05-16 | 2013-05-16 | A kind of special fixture of pad of LED wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103258924B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100854974B1 (en) * | 2007-04-25 | 2008-08-28 | (주)리드 | Substrate carrier and apparatus for manufacturing of light emitting diode |
| CN202268334U (en) * | 2011-09-20 | 2012-06-06 | 上海蓝光科技有限公司 | Protecting cover board for assisting in fixing substrate assembly device in dry etching process |
-
2013
- 2013-05-16 CN CN201310180437.3A patent/CN103258924B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100854974B1 (en) * | 2007-04-25 | 2008-08-28 | (주)리드 | Substrate carrier and apparatus for manufacturing of light emitting diode |
| CN202268334U (en) * | 2011-09-20 | 2012-06-06 | 上海蓝光科技有限公司 | Protecting cover board for assisting in fixing substrate assembly device in dry etching process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103258924A (en) | 2013-08-21 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171221 Address after: Wujiang District of Suzhou City, Jiangsu province 215215 Lili town FENHU Road No. 558 Patentee after: SINOPOWER SEMICONDUCTOR CO.,LTD. Address before: 230011 Anhui city in Hefei Province, the New Station Industrial Park Patentee before: HEFEI IRICO EPILIGHT TECHNOLOGY Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151202 |