CN103257036A - Method for measuring cavity mode split of vertical cavity surface emitting laser under room temperature condition - Google Patents
Method for measuring cavity mode split of vertical cavity surface emitting laser under room temperature condition Download PDFInfo
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- CN103257036A CN103257036A CN2013101897452A CN201310189745A CN103257036A CN 103257036 A CN103257036 A CN 103257036A CN 2013101897452 A CN2013101897452 A CN 2013101897452A CN 201310189745 A CN201310189745 A CN 201310189745A CN 103257036 A CN103257036 A CN 103257036A
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Abstract
The invention relates to a method for measuring a cavity mode split of a vertical cavity surface emitting laser under the room temperature condition. According to the method for measuring the cavity mode split of the vertical cavity surface emitting laser under the room temperature condition, laser light emitted by the vertical cavity surface emitting laser is modulated through an optical elastic modulator, the light intensity difference between two laser emitting modes which are modulated by the optical elastic modulator and are polarized in the direction of two perpendicular optical main shafts is included in the light intensity signals detected by a photoelectric detector, optical spectra of the two laser emitting modes which are polarized in the direction of the two perpendicular optical main shafts of the VCSEL can be extracted by changing the phase modulation amplitude phi 0 (actually the value of the phi 0 just needs to be changed two times) of a PEM, and then a cavity mode split value can be obtained. According to the method for measuring the cavity mode split of the vertical cavity surface emitting laser under the room temperature condition, the cavity mode split of the vertical cavity surface emitting laser can be accurately obtained under the room temperature condition by using a light spectrum system with an ordinary resolution ratio, measuring equipment is quite simple, and operation steps are simple. The method for measuring the cavity mode split of the vertical cavity surface emitting laser under the room temperature condition can be widely popularized and used in the future.
Description
Technical field
The present invention relates to the sign field of measuring technique of vertical cavity surface emitting laser, measure the method for vertical cavity surface emitting laser chamber mould splitting under especially a kind of room temperature.
Background technology
Vertical cavity surface emitting laser (VCSEL) has many advantages than edge-emitting laser, such as low threshold current, be easy to realize single mode operation, be easy to realize the far and near field distribution of two-dimentional intensive addressable array, circular symmetry and very little beam emissions angle etc.Therefore, vertical cavity surface emitting laser has caused people's extensive concern in recent years.Have the symmetric VCSEL device of desirable cylindricality on (001) sphalerite semiconductive material substrate for being grown in, two patterns of the zeroth order transverse mode that it is launched are degeneracys at energy, and are mutually perpendicular in the polarization direction.Its polarization direction is normally along the direction of two optical main axis of crystal, namely [110] and
Direction.Yet, for the VCSEL device of a reality, unavoidably there is the non-circular symmetry of unrelieved stress, built in field and device, these factors all can be destroyed the symmetry of system, thereby introduce birefringence effect.This birefringence will be removed this energy degeneracy, thereby cause very little energy splitting of this mutually perpendicular mode producing in two polarization directions, be called for short the pattern splitting.This pattern splitting makes these two patterns with respect to the position difference of gain spectral, thereby makes these two kinds of patterns have different gains.Studies show that the value of chamber mould splitting has very important meaning for optical rotation variable mechanism and the stable VCSEL device of design polarization of VCSEL device.Yet, because the value very little (having only tens μ eV usually) of this chamber mould splitting, much smaller than the inhomogeneous broadening (usually at 2-3meV) of spectrum, even if therefore under low-down temperature, also be difficult to the method for spectrum this chamber mould splitting be measured.At present, mainly contain following several technology for the chamber mould splitting of measuring vertical cavity surface emitting laser: dull and stereotyped Fabry-Perot interferometer, polarization beat frequency technology and reflection difference spectral technique etc.Yet the former two in these measuring technologies has relatively high expectations to equipment, and the latter's testing procedure is comparatively loaded down with trivial details.
Summary of the invention
In view of this, the purpose of this invention is to provide the method for measuring vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature, utilize Polarization Modulation electroluminescent spectrum technology, by changing the phase modulation of light ball modulator, with in the vertical cavity surface emitting laser respectively along [110] and
The spectral separation of two kinds of optical mode correspondences of direction polarization is come out, thereby reaches simple and efficient and obtain the purpose of vertical cavity surface emitting laser chamber mould splitting accurately.
The present invention adopts following scheme to realize: measure the method for vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature, it is characterized in that, may further comprise the steps:
S01 a: vertical cavity surface emitting laser is provided, and sets gradually two condenser lenses, a photoelasticity modulator, a polarizer, a monochromator and a detector in the light path of described vertical cavity surface emitting laser;
S02: it is that described vertical cavity surface emitting laser injects forward current that a pulse current source is provided;
S03: the light inlet slot size of adjusting described monochromator;
S04: provide the controller of a photoelasticity modulator to control described photoelasticity modulator one wavelength value and a bit phase delay value are set;
S05: provide the described monochromator of a computer control to carry out length scanning;
S06: provide a data collecting card to be transferred on the described computing machine in order to the light intensity value I1 under one group of different wave length that described detector is obtained;
S07: the controller of described photoelasticity modulator is controlled described photoelasticity modulator another one phase retardation value is set;
S08: the described monochromator of described computer control carries out length scanning;
S09: light intensity value I under another group different wave length that described data collecting card obtains described detector
2Be transferred on the described computing machine;
S10: described computing machine is according to described two groups of light intensity value I
1And I
2Obtain described vertical cavity surface emitting laser along [110] and
The spectrum I of two kinds of optical mode correspondences of direction polarization
[110]With
S11: according to described spectrum I
[110]With
Obtain described vertical cavity surface emitting laser along [110] and
The chamber mould energy E of two kinds of optical mode correspondences of direction polarization
[110]With
Thereby obtain chamber mould splitting value
In an embodiment of the present invention, described vertical cavity surface emitting laser comprises that a p-type distributed Bragg reflector, an active layer, a n type distributed Bragg reflector, a cushion, a GaAs substrate, are deposited on p-type electrode and on the described p-type distributed Bragg reflector and are deposited on n type electrode on the described GaAs substrate; [110] direction of described vertical cavity surface emitting laser is parallel with the y axle,
Direction is parallel with the x axle.
In an embodiment of the present invention, the optical axis direction of described photoelasticity modulator in the xy plane, and with the x direction of principal axis in angle of 45 degrees.
In an embodiment of the present invention, the described polarizer adopts Glan Taylor polarizing prism, and extinction ratio is smaller or equal to 5000:1, and with the assurance measuring accuracy, and the optical axis direction of the described polarizer is parallel with the x direction of principal axis.
In an embodiment of the present invention, after the described step S02, also adjust the position of described two condenser lenses, make light that described vertical cavity surface emitting laser sends by described two condenser lenses, photoelasticity modulator and the polarizers the center and focus on the light inlet slot of described monochromator.
In an embodiment of the present invention, the frequency of described pulse current source and dutycycle arrange by described computing machine, and maximum output current is 2A, and minimum output current is 20mA.
In an embodiment of the present invention, also provide a prime amplifier, be transferred to described data collecting card after amplifying in order to the light intensity value that described detector is obtained.
In an embodiment of the present invention, the grating line of described monochromator is 1200 lines/mm, and blaze wavelength is 1000nm.
In an embodiment of the present invention, described step S10 utilizes formula
Calculate I
[110]With
Wherein, I is the light intensity value that described detector obtains, φ
0Be the bit phase delay value that described photoelasticity modulator arranges, J
0(φ
0) be zero Bessel function.
In an embodiment of the present invention, after the described step S11, also change the size that described pulse current source injects described vertical cavity surface emitting laser electric current by described computing machine, return step S04, obtain the different chamber mould splitting values of injecting the vertical cavity surface emitting laser under the electric current.
The present invention has the following advantages:
1, the technical solution used in the present invention can be under the situation of not rotary sample and optical element with vertical cavity surface emitting laser in respectively along [110] and
The spectral separation of two kinds of optical mode correspondences of direction polarization is come out, the error of avoiding mechanical rotation to introduce, thus have very high measuring accuracy;
2, the technical solution used in the present invention, measuring equipment are very simple, and simple operating steps is quick, are conducive to apply in the future;
3, the technical solution used in the present invention owing to adopt the polarization spectrum modulation technique, can at room temperature accurately obtain the chamber mould splitting of vertical cavity surface emitting laser with the spectroscopic system with common resolution.
For making purpose of the present invention, technical scheme and advantage clearer, below will the present invention be described in further detail by specific embodiment and relevant drawings.
Description of drawings
Fig. 1 is measuring system synoptic diagram of the present invention.
Fig. 2 be the present invention obtain under difference is injected electric current, vertical cavity surface emitting laser respectively along [110] and
The electroluminescent spectrum figure of two kinds of optical mode correspondences of direction polarization.
Fig. 3 is that the vertical cavity surface emitting laser chamber mould splitting that obtains of the present invention is with injecting electric current situation of change figure.
Fig. 4 is measuring method process flow diagram of the present invention.
Embodiment
The invention provides the method for measuring vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature, may further comprise the steps:
S01 a: vertical cavity surface emitting laser is provided, and sets gradually two condenser lenses, a photoelasticity modulator, a polarizer, a monochromator and a detector in the light path of described vertical cavity surface emitting laser;
S02: it is that described vertical cavity surface emitting laser injects forward current that a pulse current source is provided;
S03: the light inlet slot size of adjusting described monochromator;
S04: provide the controller of a photoelasticity modulator to control described photoelasticity modulator one wavelength value and a bit phase delay value are set;
S05: provide the described monochromator of a computer control to carry out length scanning;
S06: provide a data collecting card in order to the light intensity value I under one group of different wave length that described detector is obtained
1Be transferred on the described computing machine;
S07: the controller of described photoelasticity modulator is controlled described photoelasticity modulator another one phase retardation value is set;
S08: the described monochromator of described computer control carries out length scanning;
S09: light intensity value I under another group different wave length that described data collecting card obtains described detector
2Be transferred on the described computing machine;
S10: described computing machine is according to described two groups of light intensity value I
1And I
2Obtain described vertical cavity surface emitting laser along [110] and
The spectrum I of two kinds of optical mode correspondences of direction polarization
[110]With
S11: according to described spectrum I
[110]With
Obtain described vertical cavity surface emitting laser along [110] and
The chamber mould energy E of two kinds of optical mode correspondences of direction polarization
[110]With
Thereby obtain chamber mould splitting value
In an embodiment of the present invention, described vertical cavity surface emitting laser comprises that a p-type distributed Bragg reflector, an active layer, a n type distributed Bragg reflector, a cushion, a GaAs substrate, are deposited on p-type electrode and on the described p-type distributed Bragg reflector and are deposited on n type electrode on the described GaAs substrate; Wherein, active layer is the 7.5nm InGaAs/GaAs quantum well in 3 cycles, and this VCSEL device is the oxidation limiting structure, target wavelength is 980nm, the substrate bright dipping, and light hole is that diameter is the circle of 400 μ m, [110] direction of described vertical cavity surface emitting laser is parallel with the y axle
Direction is parallel with the x axle.The optical axis direction of described photoelasticity modulator in the xy plane, and with the x direction of principal axis in angle of 45 degrees.The described polarizer adopts Glan Taylor polarizing prism, extinction ratio is smaller or equal to 5000:1, to guarantee measuring accuracy, and the optical axis direction of the described polarizer is parallel with the x direction of principal axis, and through after the polarizer, the polarisation of light direction has all become the x direction, at this moment, just become monochromatic light later on through monochromator splitting again, the grating line of described monochromator is 1200 lines/mm, and blaze wavelength is 1000nm.After the described step S02, also adjust the position of described two condenser lenses, make light that described vertical cavity surface emitting laser sends by described two condenser lenses, photoelasticity modulator and the polarizers the center and focus on the light inlet slot of described monochromator.The frequency of described pulse current source and dutycycle arrange by described computing machine, and maximum output current is 2A, and minimum output current is 20mA.One prime amplifier also is provided, is transferred to described data collecting card after amplifying in order to the light intensity value that described detector is obtained.Described step S10 utilizes formula
Calculate I
[110]With
Wherein, I is the light intensity value that described detector obtains, φ
0Be the bit phase delay value that described photoelasticity modulator arranges, J
0(φ
0) be zero Bessel function.After the described step S11, also change the size that described pulse current source injects described vertical cavity surface emitting laser electric current by described computing machine, return step S04, obtain the different chamber mould splitting values of injecting the vertical cavity surface emitting laser under the electric current.Described detector is silicon detector.Described prime amplifier is galvo-preamplifier, and frequency filtering can be set.
As shown in Figure 1, measuring system of the present invention comprises two condenser lenses, a PEM, a polarizer, a monochromator and a detector that sets gradually on a vertical cavity surface emitting laser and the light path thereof, and a pulse current source, a PEM controller, a computing machine, a prime amplifier and a data collecting card.
As shown in Figure 2, Fig. 2 be the present invention obtain under difference is injected electric current, vertical cavity surface emitting laser respectively along [110] and
The electroluminescent spectrum figure of two kinds of optical mode correspondences of direction polarization.Inject electric current and be respectively 400,500,600 and 800mA.Increase along with injecting electric current, luminous intensity increases, and the value of chamber mould splitting also increases.
As shown in Figure 3, Fig. 3 is that the vertical cavity surface emitting laser chamber mould splitting that obtains of the present invention is with injecting electric current situation of change figure.Wherein, put the result who records for experiment, solid line is the result of linear fit.As seen, increase with injecting electric current, chamber mould splitting is linear increasing almost, and this is caused by linear electro-optic effect.Namely when along [001] direction when applying electric field E, along [110] and
The refractive index n of direction
[110]With
Satisfy following equation:
N wherein
0Refractive index during for no extra electric field, r is Al
xGa
1-xThe electrooptical coefficient of As material.Like this, electric field is introduced birefringence by linear electro-optic effect, because birefringent size is proportional to extra electric field, so the chamber mould splitting that is caused by birefringence will be with the impressed current linear change.
As shown in Figure 4, Fig. 4 is measuring method process flow diagram of the present invention.May further comprise the steps: step 1: adjust light path, dress VCSEL device; Step 2: inject forward current for the VCSEL device; Step 3: the position of adjusting VCSEL device and two condenser lenses; Step 4: adjust monochromator light inlet slot size; Step 5: bigness scale spectrum, determine the spectral range of prime amplifier enlargement factor and measurement; Step 6: wavelength and the bit phase delay value of light ball modulator (PEM) are set, by twice measurement isolate the VCSEL device respectively along [110] and
The spectrum I of two kinds of optical mode correspondences of direction polarization
[110]With
Step 7: obtain chamber pattern splitting value; Step 8: change and inject electric current, obtain the different chamber mould splitting values of injecting under the electric current; Step 9: test finishes and closes instrument.Detailed step is as described below.
Step 1: adjust light path, dress VCSEL device; Adjust the position of lens, photoelasticity modulator (PEM) and the polarizer in the test macro, make they the center point-blank, and the light inlet slot center by monochromator, detector is aimed at monochromator and is gone out the optical slits center.Simultaneously, make the optical axis of PEM in the x-y plane and with the y axle, become 45 degree, allow the optical axis of the polarizer along the x direction of principal axis.The VCSEL device is contained on the specimen holder, makes device
Direction is along the x direction, and [110] direction is along the y direction.
Step 2: inject forward current for the VCSEL device; Open computing machine, the frequency by the computer installation pulse current is 1KHz, and dutycycle is 3%.Open the monochromator switch, with the light inlet slot furnishing zero of monochromator.By the computer control pulse current source, inject direct impulse electric current 800mA for the VCSEL device.
Step 3: the position of adjusting VCSEL device and two condenser lenses; Can see the laser that the VCSEL device sends with the wavelength up-conversion, adjust the position of VCSEL device and the position (all around) of two condenser lenses, make light that the VCSEL device sends by two lens, photoelasticity modulator (PEM) and the polarizer the center and focus on the light inlet slot of monochromator.
Step 4: adjust monochromator light inlet slot size; The light inlet slot of monochromator is transferred to a suitable value, and 0.25mm is adopted in this experiment.
Step 5: bigness scale spectrum, determine the spectral range of prime amplifier enlargement factor and measurement; Open the prime amplifier switch, choose prime amplifier enlargement factor and frequency filtering, select a less enlargement factor earlier, in order to avoid the light that laser instrument is sent out causes too macrolesion prime amplifier of photocurrent too by force.Initial wavelength, termination wavelength and scanning step by the scanning of computer installation monochromator begin to measure, and obtain VCSEL device electroluminescent spectrum I
0From this electroluminescent spectrum I
0Find out the wavelength of the strongest spectrum peak position correspondence of VCSEL device luminescent spectrum signal, this experiment is 980.3nm.Grating by the computer control monochromator forwards this wavelength location to, the position of fine setting VCSEL device and the position (all around) of two condenser lenses, and the signal that makes detector detect is the strongest.Then, regulate the enlargement factor of prime amplifier, the detector signal that makes computer acquisition arrive suitable (not too large, also can be too not little).
Step 6: wavelength and the bit phase delay value of light ball modulator (PEM) are set, by twice measurement isolate the VCSEL device respectively along [110] and
The spectrum I of two kinds of optical mode correspondences of direction polarization
[110]With
Open PEM, regulate its controller, it is 980.3nm that wavelength is set, and it is 0 that bit phase delay is set.By computer control monochromator and data collecting card, begin to measure the electroluminescent spectrum of VCSEL device, the wavelength coverage of this experiment measuring is 978-982.5nm, step-length is 0.1nm.The electroluminescent spectrum that note records at this moment is I
1The bit phase delay that PEM is set is 0.5 λ, by computer control monochromator and data collecting card, restarts to measure, and the wavelength coverage of measurement is identical with preceding one-shot measurement with step-length, and the electroluminescent spectrum that note records at this moment is I
2Because
And, J
0(0)=1, J
0(0.5 λ)=-0.304, wherein λ=980.3nm.Therefore, we by above-mentioned two formula obtain the VCSEL device respectively along [110] and
The spectrum I of two kinds of optical mode correspondences of direction polarization
[110]With
Namely
I
[110]=0.5624×I
1-0.2441×I
2,
Step 7: obtain chamber pattern splitting value; From spectrum I
[110]With
We can be easy to obtain the VCSEL device along [110] and
The energy splitting of the zlasing mode of direction polarization
E wherein
[110]Be the chamber mould energy position along the zlasing mode of [110] direction polarization,
Be the edge
The chamber mould energy position of the zlasing mode of direction polarization.
Step 8: change and inject electric current, obtain the different chamber mould splitting values of injecting under the electric current; Change the size that pulse current source injects VCSEL device electric current by computing machine, return step 6 then, we just can obtain the different chamber mould splitting values of injecting the VCSEL device under the electric current.
Step 9: test finishes and closes instrument; After obtaining testing required difference and injecting the chamber mould splitting value of the VCSEL device under the electric current, close pulse current source, prime amplifier and monochromator, shut down computer after copying out data, finish experiment.
Above-listed preferred embodiment; the purpose, technical solutions and advantages of the present invention are further described; institute is understood that; the above only is preferred embodiment of the present invention; not in order to limit the present invention; within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. measure the method for vertical cavity surface emitting laser chamber mould splitting under the room temperature, it is characterized in that, may further comprise the steps:
S01 a: vertical cavity surface emitting laser is provided, and sets gradually two condenser lenses, a photoelasticity modulator, a polarizer, a monochromator and a detector in the light path of described vertical cavity surface emitting laser;
S02: it is that described vertical cavity surface emitting laser injects forward current that a pulse current source is provided;
S03: the light inlet slot size of adjusting described monochromator;
S04: provide the controller of a photoelasticity modulator to control described photoelasticity modulator one wavelength value and a bit phase delay value are set;
S05: provide the described monochromator of a computer control to carry out length scanning;
S06: provide a data collecting card in order to the light intensity value I under one group of different wave length that described detector is obtained
1Be transferred on the described computing machine;
S07: the controller of described photoelasticity modulator is controlled described photoelasticity modulator another one phase retardation value is set;
S08: the described monochromator of described computer control carries out length scanning;
S09: light intensity value I under another group different wave length that described data collecting card obtains described detector
2Be transferred on the described computing machine;
S10: described computing machine is according to described two groups of light intensity value I
1And I
2Obtain described vertical cavity surface emitting laser along [110] and
The spectrum I of two kinds of optical mode correspondences of direction polarization
[110]With
S11: according to described spectrum I
[110]With
Obtain described vertical cavity surface emitting laser along [110] and
The chamber mould energy E of two kinds of optical mode correspondences of direction polarization
[110]With
Thereby obtain chamber mould splitting value
2. measure the method for vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature according to claim 1, it is characterized in that: described vertical cavity surface emitting laser comprises that a p-type distributed Bragg reflector, an active layer, a n type distributed Bragg reflector, a cushion, a GaAs substrate, are deposited on p-type electrode and on the described p-type distributed Bragg reflector and are deposited on n type electrode on the described GaAs substrate; [110] direction of described vertical cavity surface emitting laser is parallel with the y axle,
Direction is parallel with the x axle.
3. measure the method for vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature according to claim 2, it is characterized in that: the optical axis direction of described photoelasticity modulator in the xy plane, and with the x direction of principal axis in angle of 45 degrees.
4. measure the method for vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature according to claim 2, it is characterized in that: the described polarizer adopts Glan Taylor polarizing prism, extinction ratio is smaller or equal to 5000:1, with the assurance measuring accuracy, and the optical axis direction of the described polarizer is parallel with the x direction of principal axis.
5. measure the method for vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature according to claim 1, it is characterized in that: after the described step S02, also adjust the position of described two condenser lenses, make light that described vertical cavity surface emitting laser sends by described two condenser lenses, photoelasticity modulator and the polarizers the center and focus on the light inlet slot of described monochromator.
6. measure the method for vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature according to claim 1, it is characterized in that: the frequency of described pulse current source and dutycycle arrange by described computing machine, maximum output current is 2A, and minimum output current is 20mA.
7. measure the method for vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature according to claim 1, it is characterized in that: a prime amplifier also is provided, is transferred to described data collecting card after amplifying in order to the light intensity value that described detector is obtained.
8. measure the method for vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature according to claim 1, it is characterized in that: described step S10 utilizes formula
Calculate I
[110]With
Wherein, I is the light intensity value that described detector obtains, φ
0Be the bit phase delay value that described photoelasticity modulator arranges, J
0(φ
0) be zero Bessel function.
9. measure the method for vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature according to claim 1, it is characterized in that: the grating line of described monochromator is 1200 lines/mm, and blaze wavelength is 1000nm.
10. measure the method for vertical cavity surface emitting laser chamber mould splitting under a kind of room temperature according to claim 1, it is characterized in that: after the described step S11, also change the size that described pulse current source injects described vertical cavity surface emitting laser electric current by described computing machine, return step S04, obtain the different chamber mould splitting values of injecting the vertical cavity surface emitting laser under the electric current.
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| CN106785897A (en) * | 2017-02-15 | 2017-05-31 | 西南大学 | Polarization output conversion device based on long wavelength's spin VCSEL |
| CN109557547A (en) * | 2018-12-27 | 2019-04-02 | 武汉万集信息技术有限公司 | Laser radar, range measurement and/or method for determining speed and storage medium |
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| CN112729271A (en) * | 2020-12-21 | 2021-04-30 | 北京航空航天大学 | Optical gyroscope resonant cavity structure based on singular point resonance mode splitting |
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| CN109827753B (en) * | 2019-01-06 | 2022-03-15 | 东莞市凯迪微智能装备有限公司 | Full-automatic human eye safety testing device and testing method thereof |
| CN112729271A (en) * | 2020-12-21 | 2021-04-30 | 北京航空航天大学 | Optical gyroscope resonant cavity structure based on singular point resonance mode splitting |
| CN112729271B (en) * | 2020-12-21 | 2022-07-15 | 北京航空航天大学 | Optical gyroscope resonant cavity structure based on singular point resonance mode splitting |
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