CN103248345B - The temperature-compensation circuit and temperature compensation of a kind of Hall switch sensor - Google Patents
The temperature-compensation circuit and temperature compensation of a kind of Hall switch sensor Download PDFInfo
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Abstract
The invention discloses a kind of temperature-compensation circuit of Hall switch sensor and temperature compensation, including：Hall thin slice, difference amplifier, switched-capacitor circuit, voltage-stablizer, hysteresis comparator, reference current generating circuit and threshold voltage generation circuit are in series between voltage-stablizer and switched-capacitor circuit, generation reference current and threshold voltage are supplied to hysteresis comparator, for hysteresis comparator by the hall sensing voltage after amplification compared with threshold voltage, output differentiates that result is sent into output stage.Invention increases reference current generating circuit module, change threshold voltage producing method, temperature-compensating precision is higher, and will not be by the nonlinear influence of temperature-coefficient of electrical resistance, indiscriminate high-precision compensation can be realized on each temperature value, the requirement to used processing line is reduced, without the resistance of specific Positive and Negative Coefficient Temperature, relaxes selection face of the design engineer to processing line.
Description
Technical field
The present invention relates to the temperature-compensating electricity of a kind of temperature-compensation circuit, more particularly to a kind of Hall switch sensor
Road；The invention further relates to a kind of temperature compensation of Hall switch sensor.
Background technology
Hall sensor is a kind of magnetic field sensor made according to Hall effect.Hall effect is the one of magnetoelectric effect
Kind, the effect is that American scientist Hall has found when the conductive mechanism of metal is being studied within 1879.Later it is found that half
The Hall effect of conductor is more much better than than metal, and various Hall elements have been made using this phenomenon, is widely used in industry certainly
The fields such as dynamicization, automotive electronics, consumer electronics.
Bias current I is passed at wafer both ends, and applies the magnetic that magnetic induction intensity is B in the vertical direction of thin slice
, then on the direction of electric current and magnetic field, electrical potential difference will be produced, the electrical potential difference is referred to as Hall voltage VHall
I is the bias current for flowing through Hall thin slice；
B is the magnetic field size of vertical Hall thin slice；
D is the thickness of Hall thin slice；
K is Hall coefficient, its geometry with Hall thin slice, and material is relevant.
A series of magnetic field sensor product can be produced based on Hall effect, Hall switch is one kind therein.It
External magnetic field is sensed by Hall thin slice, when size reaches threshold value when magnetic field, exports corresponding digital level to characterize magnetic field
Direction.
Conventional Hall switch sensor is as shown in figure 1, including voltage-stablizer, Hall thin slice, Hall voltage differential amplification
Device, hysteresis comparator, output stage.Wherein, Hall thin slice is made up of semi-conducting material, when the temperature increases, the electricity of Hall thin slice
Resistance can increase therewith, and the voltage for being applied to Hall thin slice is changeless, therefore the electric current for flowing through Hall thin slice will be with
The increase of temperature and reduce, from formula 1 understand this magnetic sensitivity of Hall switch can be caused to reduce.When temperature is increased to certain journey
Degree, may result in the threshold value that hall sensing voltage is unable to reach circuit configuration, so as to the disabler of Hall switch, can not feel
Answer the change in magnetic field.To solve this problem, the temperature limit of Hall switch is improved, provides a kind of biography in the prior art
The method of the temperature-compensation circuit of system：Increase a threshold voltage generation circuit module, as shown in Figures 2 and 3：Increase a threshold
Threshold voltage generation circuit module, the module produce a threshold voltage and are supplied to hysteresis comparator, and the module uses positive temperature system
Number resistance (R7 and R10) and negative temperature coefficient resister (R8 and R9) form a resistance string, by choosing suitable resistance ratio,
Produce the temperature coefficient threshold voltage roughly the same with hall sensing voltage temperature coefficient.The program can be right to a certain extent
The sensitivity of Hall switch compensates, but due to resistance variation with temperature and non-linear, can cause in different temperature
Under, the compensation precision of magnetic sensitivity is different.The temperature compensation error is higher, and processing line used in needs has
The resistance type of suitable Positive and Negative Coefficient Temperature.
The Chinese patent that number of patent application is 201110103117.9 discloses a kind of temperature-compensating mode, as traditional
The scheme of temperature-compensating is carried out using Positive and Negative Coefficient Temperature resistance.By choosing suitable Positive and Negative Coefficient Temperature resistance type and electricity
Resistance ratio, the compensation to the drift of hall sensing voltage temperature can be achieved.It is but non-thread due to temperature-coefficient of electrical resistance under actual conditions
Property, the compensation error of the program is higher, and indiscriminate compensation can not be realized on each temperature value.The production of integrated circuit
During influenceed by technology controlling and process precision, the resistance of different batches has certain difference, due to traditional compensation electricity
Road employs two kinds of resistance of Positive and Negative Coefficient Temperature, and its compensation effect and resistance have direct relation, therefore traditional scheme is held
It is vulnerable to the influence of technique.
The content of the invention
It is an object of the invention to provide a kind of temperature-compensation circuit of Hall switch sensor and temperature compensation,
The effect temperature compensation of the temperature-compensation circuit and temperature compensation is unrelated with resistance, will not be by different batches technique
The influence of deviation, solves shortcoming existing for prior art.
The present invention adopts the following technical scheme that realization：
A kind of temperature-compensation circuit of Hall switch sensor, including：One Hall thin slice, for sensing magnetic patch to be believed
Number and be translated into voltage signal；One difference amplifier, for Hall voltage to be amplified；One switching capacity electricity
Road, for the hall signal after amplification to be carried out into imbalance elimination；One voltage-stablizer, for external voltage to be converted into stable
Portion's operating voltage is simultaneously supplied to other circuit modules；One hysteresis comparator, for the hall signal after amplification and threshold value is electric
Pressure is compared, exports differentiation result and be sent into power output stage, and reference is in series between voltage-stablizer and switched-capacitor circuit
Current generating circuit and threshold voltage generation circuit, the reference current generating circuit generate one and Hall sheet current temperature
Coefficient identical reference current, the threshold voltage generation circuit produce the temperature coefficient identical threshold value with hall sensing voltage
Voltage, there is provided to the hysteresis comparator, the hysteresis comparator carries out the hall sensing voltage after amplification and threshold voltage
Compare, output differentiates that result is sent into output stage, and described Hall thin slice one end is connected with voltage-stablizer, other end ground connection, the Hall
Thin slice is also connected with the difference amplifier, the difference amplifier successively with switched-capacitor circuit, hysteresis comparator and output
Level is connected, it is characterised in that：Threshold voltage generation circuit includes the five, the six resistance, the seven, the eight, 13,14 transistors, institute
State the seven, the eight transistors be connected form PMOS cascode current sources, the described 13rd, 14 transistors be connected form NMOS
Cascode current sources, the temperature coefficient of the five, the six resistance is 1x10-5/℃。
A kind of temperature compensation of Hall switch sensor, it is characterised in that comprise the following steps：Induced field is believed
Voltage signal number is translated into, produces one and Hall sheet current temperature coefficient identical reference current, is produced and Hall
The temperature coefficient identical threshold voltage of induced voltage is simultaneously supplied to hysteresis comparator, and hall sensing voltage is amplified and incited somebody to action
Hall signal after amplification carries out imbalance elimination, and by the hall sensing voltage after amplification compared with threshold voltage, output is sentenced
Other result, the reference current obtain equal-sized bias current (ib3) and (ib4), threshold voltage by current mirror mirror image
Temperature coefficient it is identical with the current temperature coefficient for flowing through Hall thin slice.
The advantageous effects that the present invention possesses are：Compared with traditional compensation schemes, invention increases reference
Current generating circuit module, change threshold voltage producing method.The temperature-compensating precision of the present invention is higher, and will not be by electricity
The nonlinear influence of temperature coefficient is hindered, indiscriminate high-precision compensation can be realized on each temperature value.Present invention drop
The low requirement to used processing line, without the resistance of specific Positive and Negative Coefficient Temperature, relaxes design engineer to work
The selection face of skill line.
Brief description of the drawings
Fig. 1 is the circuit structure block diagram of ordinary tap type Hall sensor.
Fig. 2 is the structured flowchart of prior art temperature-compensation circuit.
Fig. 3 is the resistance string of the positive and negative temperature coefficient of resistance of prior art.
Fig. 4 is the temperature-compensation circuit structured flowchart of Hall switch sensor of the present invention.
Fig. 5 is the temperature-compensation circuit structure principle chart of Hall switch sensor of the present invention.
Fig. 6 is the overall structure figure of the temperature-compensation circuit of Hall switch sensor of the present invention.
Embodiment
By the following description to embodiment, it will more contribute to public understanding of the invention, but can't should be by Shen
Given specific embodiment of asking someone is considered as the limitation to technical solution of the present invention, any definition to part or technical characteristic
Be changed and/or make form to overall structure and immaterial conversion is regarded as what technical scheme was limited
Protection domain.
A kind of temperature-compensation circuit of Hall switch sensor, including：One Hall thin slice, for sensing magnetic patch to be believed
Number and be translated into voltage signal；One difference amplifier, for Hall voltage to be amplified；One switching capacity electricity
Road, for the hall signal after amplification to be carried out into imbalance elimination；One voltage-stablizer, for external voltage to be converted into stable
Portion's operating voltage is simultaneously supplied to other circuit modules；One hysteresis comparator, for the hall signal after amplification and threshold value is electric
Pressure is compared, exports differentiation result and is sent into power output stage, it is characterised in that：
Reference current generating circuit and threshold voltage generation circuit, institute are in series between voltage-stablizer and switched-capacitor circuit
State reference current generating circuit and generate one and Hall sheet current temperature coefficient identical reference current, the threshold voltage production
Raw circuit produces the temperature coefficient identical threshold voltage with hall sensing voltage, there is provided described slow to the hysteresis comparator
For stagnant comparator by the hall sensing voltage after amplification compared with threshold voltage, output differentiates that result is sent into output stage.
Further, described Hall thin slice one end is connected with voltage-stablizer, the other end ground connection, the Hall thin slice also with it is described
Difference amplifier is connected, and the difference amplifier is connected with switched-capacitor circuit, hysteresis comparator and output stage successively.
Reference current generating circuit includes first and second, nine transistors, first and second operational amplifier, first, second and third,
Four resistance, the material and geometry of the first resistor are identical with the Hall thin slice, and first and second transistor is connected structure
Into cascode current mirrors, first operational amplifier and the 9th transistor form feedback control loop.
Further, the output end of first operational amplifier connects the grid of the 9th transistor, the first computing
The negative input end of amplifier connects the drain electrode of the 9th transistor.
Further, the area of the first resistor is the 25% to 50% of the Hall thin slice.
Further, it is described second and third, four resistance be high square valued resistor.
Further, in addition to the five, the six resistance, the seven, the eight, 13,14 transistors, the seven, the eight transistor
Be connected form PMOS cascode current sources, the described 13rd, 14 transistors be connected form NMOS cascode current sources.
Further, the temperature coefficient of the five, the six resistance is 1x10-5/℃。
A kind of temperature compensation of Hall switch sensor, comprises the following steps：Magnetic field sensor signal is converted
For voltage signal, one and Hall sheet current temperature coefficient identical reference current are produced, is produced and hall sensing voltage
Temperature coefficient identical threshold voltage is simultaneously supplied to hysteresis comparator, by hall sensing voltage be amplified and by after amplification suddenly
You carry out imbalance elimination by signal, and by the hall sensing voltage after amplification compared with threshold voltage, output differentiates result.
The reference current obtains equal-sized bias current ib3 and ib4, the temperature of threshold voltage by current mirror mirror image
It is identical with the current temperature coefficient for flowing through Hall thin slice to spend coefficient.
As shown in figure 1, conventional Hall switch sensor, including voltage-stablizer, Hall thin slice, Hall voltage differential amplification
Device, hysteresis comparator, output stage.Wherein Hall thin slice is made up of semi-conducting material, when the temperature increases, the resistance of Hall thin slice
It can increase therewith, and the voltage for being applied to Hall thin slice is changeless, therefore the electric current for flowing through Hall thin slice will be with temperature
The increase of degree and reduce, understand that this can cause the magnetic sensitivity of Hall switch to reduce from the formula (1) of background section.Work as temperature
Rise to a certain extent, may result in the threshold value that hall sensing voltage is unable to reach circuit configuration, so as to the work(of Hall switch
Can failure, can not induced field change.In order to improve the temperature limit of Hall switch, it is necessary to add temperature in circuit
Compensation circuit.
The threshold voltage generation circuit that traditional compensation way uses as shown in Figures 2 and 3, increase a threshold voltage production
Raw circuit module, the module produce a threshold voltage and are supplied to hysteresis comparator, and the module uses positive temperature coefficient resistor (R7
With R10) and negative temperature coefficient resister (R8 and R9) one resistance string of composition, by choosing suitable resistance type and resistance ratio
To realize temperature-compensating, the temperature coefficient threshold voltage roughly the same with hall sensing voltage temperature coefficient is produced.The program can
Compensated with the sensitivity to a certain extent to Hall switch, but due to resistance variation with temperature and non-linear, meeting
Cause at different temperature, the compensation precision of magnetic sensitivity is different.The temperature compensation error is higher, and needs institute
The processing line used has the resistance type of suitable Positive and Negative Coefficient Temperature.
As shown in Figures 4 to 6：The magnetic induction sensitivity of Hall thin slice reduces with the increase of temperature, therefore hall sensing
Device needs temperature-compensation circuit to make up the temperature drift of its sensitivity.The compensation schemes of the present invention are as follows：By reference to
Current generating circuit generates a temperature coefficient identical reference current Iref with flowing through Hall sheet current, by the current mirror
The fiveth resistance R5 very low with temperature coefficient as after, the 6th resistance R6 generation threshold voltage are supplied to hysteresis comparator.The program
The temperature coefficient of the threshold voltage of lower hysteresis comparator is almost identical with the temperature coefficient of Hall thin slice sensitivity, only by threshold
5th resistance R5 in threshold voltage generation circuit, the 6th resistance R6 temperature coefficient influence.Assuming that in threshold voltage generation circuit
It is 1x10 to select temperature coefficient-5Resistance, then in the range of -40 DEG C to 150 DEG C, the temperature drift of magnetic sensitivity is only 0.1%
To 0.2%, it is sufficient to meet the application demand of Hall switch sensor.
Hall switch sensor temperature compensation proposed by the invention and circuit include：Hall thin slice, voltage stabilizing
Device, bias current generating circuit, threshold voltage generation circuit, Hall voltage difference amplifier, switched-capacitor circuit, sluggishness is relatively
Device, output stage.Hall thin slice magnetic field sensor signal is translated into voltage signal；External voltage VIN is converted into surely by voltage-stablizer
Fixed internal operating voltages VDD is supplied to other circuit modules；Reference current generating circuit produces one and Hall sheet current
Temperature coefficient identical reference current；Threshold voltage generation circuit produces threshold value of the temperature coefficient with Hall thin slice change of sensitivity
Voltage, there is provided to hysteresis comparator；Hall voltage is amplified by difference amplifier；Switched-capacitor circuit is by the Hall after amplification
Signal carries out imbalance elimination；For hysteresis comparator by the hall signal after amplification compared with threshold voltage, output differentiates result
It is sent into power output stage.Compared with traditional compensation schemes, invention increases reference current generating circuit module, changes
Threshold voltage producing method.The temperature-compensating precision of the present invention is higher, and will not be by the nonlinear shadow of temperature-coefficient of electrical resistance
Ring, indiscriminate high-precision compensation can be realized on each temperature value.Present invention reduces to used processing line
Requirement, without the resistance of specific Positive and Negative Coefficient Temperature, relax selection face of the design engineer to processing line.
Fig. 4 gives the system block diagram of the present invention, compared to traditional Hall switch sensor integrated circuit, the present invention
Reference current generating circuit is added, and changes the producing method of threshold voltage.
Reference current generating circuit is by resistance R1, R2, R3, R4, the part such as amplifier OPA1 and OPA2, current mirror of low imbalance
Composition.Resistance R1 material is identical with Hall thin slice, and resistance R1 geometry is identical with Hall thin slice, be Hall thin slice etc.
It is scaling or reduce, the 25% to 50% of Hall thin slice is generally chosen to save domain space.
Divider resistance：Second resistance R2,3rd resistor R3, the 4th resistance R4 are same type resistance, are mainly used as entering VDD
Row decomposes, and obtains the voltage proportional to VDD.Amplifier OPA1 and transistor M9 forms feedback control loop, and resistance R1 voltage is steady
It is scheduled onTherefore the size for the reference current Iref for flowing through resistance R1 is as shown in Equation 2：
By using suitable resistance ratio, the stable voltage swing in first resistor R1 can use after feedback control loop
The 1/10 to 1/4 of VDD.Second operational amplifier OPA2 connects into the structure of voltage follower, and its effect is by threshold voltage
The VCM node voltages of generation circuit module are stable in VDD/2.
Threshold voltage generation circuit module is made up of current source and resistance string.7th transistor M7 and the 8th transistor M8 structures
Into PMOS cascode current sources Ib3；13rd transistor M13 and the 14th transistor M14 forms NMOS cascode electric currents
Source Ib4.Ib3 and Ib4 is obtained by cascode current mirror image reference electric currents Iref, they equal in magnitude.Resistance string is by low
Resistance R5 and the R6 composition of temperature coefficient.Shown in threshold voltage Δ V1 such as formulas (3).
Δ V1=V1-VCM=Ib3*R5=m*Iref*R5 (3)
M is Iref by obtaining Ib3 scale factor after cascode current mirror mirror images.
(2) are substituted into (3), can be obtained：
Because second resistance R2,3rd resistor R3 and the 4th resistance R4 type are identical, from formula (4) it was found from, Δ
V1 temperature coefficient and VDD, first resistor R1, the 5th resistance R5 are relevant.
The bias current size for flowing through Hall thin slice is
Wherein VDD is the voltage of voltage-stablizer output, supplies Hall thin slice and other internal circuit blocks, Rhall is suddenly
The resistance of your thin slice
V is understood from formula (6)HallTemperature coefficient and VDD, Rhall temperature coefficient it is relevant.
In the present invention, first resistor R1 use with Hall thin slice identical material, resistance size is equal with RHall, so
Knowable to contrast (4) and formula (6), the difference of hall sensing voltage Vhall and hysteresis comparator threshold voltage Δ V1 temperature coefficient
The temperature change of the 5th resistance (R5) is not only in that, as shown in Equation 7.
It is different from hall sensing voltage Vhall temperature coefficient that hysteresis comparator another threshold voltage Δ V2 can similarly be obtained
Part is only in that the 6th resistance R6 temperature change.
The very low resistance type of 5th resistance R5 and the 6th resistance R6 selections temperature coefficient in the present invention, for example select temperature
Coefficient is 1x10-5Resistance type, then temperature is from when changing to 150 DEG C for -40 DEG C, and R2 resistance variations ratio is less than 0.2%, phase
The temperature drift ratio of the magnetic sensitivity for the Hall sensor answered is no more than 0.2%.
The effect temperature compensation precision of the program produces higher than traditional a certain proportion of Positive and Negative Coefficient Temperature resistance of use
The mode of threshold voltage, bigger advantage are that the program is realized in whole temperature limit on each temperature value
It is almost indiscriminate accurate compensation.In addition, the present invention, which can solve temperature-compensation circuit, is vulnerable to asking for process batch influence
Topic.Being influenceed in the production process of integrated circuit by technology controlling and process precision, the resistance of different batches has certain difference,
Because traditional compensation circuit employs two kinds of resistance of Positive and Negative Coefficient Temperature, its compensation effect and resistance have direct relation,
Therefore traditional scheme is easily influenceed by technique.The effect temperature compensation of the present invention is unrelated with resistance, will not be by
The influence of different batches process deviation.
Certainly, the present invention can also have other various embodiments, in the case of without departing substantially from spirit of the invention and its essence,
Those skilled in the art can be made according to the present invention it is various it is corresponding change and deformation, but these it is corresponding change and
Deformation should all belong to the protection domain of appended claims of the invention.
Claims (2)
1. a kind of temperature-compensation circuit of Hall switch sensor, including：One Hall thin slice, for sensing magnetic patch signal simultaneously
It is translated into voltage signal；One difference amplifier, for hall sensing voltage to be amplified；One switching capacity electricity
Road, for the hall sensing voltage after amplification to be carried out into imbalance elimination；One voltage-stablizer, for external voltage to be converted into stabilization
Internal operating voltages and be supplied to other circuit modules；One hysteresis comparator, for by the hall sensing voltage after amplification
Compared with threshold voltage, export differentiation result and be sent into power output stage, gone here and there between voltage-stablizer and switched-capacitor circuit
Reference current generating circuit and threshold voltage generation circuit are associated with, the reference current generating circuit generates one and Hall thin slice
Current temperature coefficient identical reference current, the threshold voltage generation circuit produce the temperature coefficient phase with hall sensing voltage
With threshold voltage, there is provided to the hysteresis comparator, the hysteresis comparator is by the hall sensing voltage and threshold value after amplification
Voltage is compared, and output differentiates that result is sent into output stage, and described Hall thin slice one end is connected with voltage-stablizer, other end ground connection,
The Hall thin slice is also connected with the difference amplifier, and the difference amplifier is successively compared with switched-capacitor circuit, sluggishness
Device is connected with output stage, it is characterised in that：Threshold voltage generation circuit includes the five, the six resistance, and the seven, the eight, 13,14 is brilliant
Body pipe, the seven, the eight transistor be connected form PMOS cascode current sources, the described 13rd, 14 transistors be connected structure
Into NMOS cascode current sources, the temperature coefficient of the five, the six resistance is 1x10-5/℃。
2. a kind of temperature compensation of Hall switch sensor, it is characterised in that comprise the following steps：Magnetic field sensor signal
Voltage signal is translated into, produces one and Hall sheet current temperature coefficient identical reference current, is produced and Hall sense
Answer the temperature coefficient identical threshold voltage of voltage and be supplied to hysteresis comparator, hall sensing voltage is amplified and will put
Hall sensing voltage after big carries out imbalance elimination, by the hall sensing voltage after amplification compared with threshold voltage, output
Differentiate result, the reference current obtains equal-sized bias current ib3 and ib4 by current mirror mirror image, threshold voltage
Temperature coefficient is identical with the current temperature coefficient for flowing through Hall thin slice.
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| CN101290233A (en) * | 2007-04-19 | 2008-10-22 | 上海钜胜微电子有限公司 | Hall effect circuit temperature compensation method and its circuit |
| CN101886933A (en) * | 2010-07-16 | 2010-11-17 | 灿瑞半导体(上海)有限公司 | Hall switch circuit with temperature compensation |
| CN102185600A (en) * | 2011-04-22 | 2011-09-14 | 灿瑞半导体(上海)有限公司 | Temperature compensation method of Hall switch based on CMOS (complementary metal oxide semiconductor) technology and circuit thereof |
| CN102811044A (en) * | 2011-06-02 | 2012-12-05 | 上海腾怡半导体有限公司 | Switch type hall sensor with temperature compensation and hysteresis comparator circuit |
| CN203301443U (en) * | 2013-05-23 | 2013-11-20 | 成都芯进电子有限公司 | Temperature compensation circuit of hall switch sensor |
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| CN103248345A (en) | 2013-08-14 |
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Address after: Room 401, unit 2, building 3, No. 88, Tianchen Road, high tech Zone (West District), Chengdu, Sichuan 610000 Patentee after: Chengdu Xinjin Electronics Co.,Ltd. Country or region after: China Address before: Room 306, 3rd Floor, Youth (College Students) Entrepreneurship Park, No. 2 Xingsheng West Road, Jinniu High tech Industrial Park, Chengdu, Sichuan Province, 610031 Patentee before: Chengdu Xinjin Electronics Co.,Ltd. Country or region before: China |