CN103247737B - There is the light-emitting diode chip for backlight unit of catoptric arrangement - Google Patents
There is the light-emitting diode chip for backlight unit of catoptric arrangement Download PDFInfo
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- CN103247737B CN103247737B CN201210399892.8A CN201210399892A CN103247737B CN 103247737 B CN103247737 B CN 103247737B CN 201210399892 A CN201210399892 A CN 201210399892A CN 103247737 B CN103247737 B CN 103247737B
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Abstract
The invention discloses a kind of light-emitting diode chip for backlight unit with catoptric arrangement, the lower section being positioned at light-emitting diode chip for backlight unit has the reflective design of three-decker, first stage reflection is carried out by several Prague diffraction layers, engaged a metallic reflector by a transparent thin film layer again to continue reflection, most of light can be reflected by the merit that combines of this three-decker, avoid being used alone metallic reflection material and absorption problem occurring simultaneously, thus improving extraction efficiency.
Description
Technical field
The present invention relates to a kind of light-emitting diode chip for backlight unit technical field, particularly relate to a kind of light-emitting diode chip for backlight unit with catoptric arrangement.
Background technology
Light emitting diode (Light Emitting Diode, LED) it is the solid-state light-emitting component made of a kind of semi-conducting material, it uses the combination of the iii-v chemical element such as gallium phosphide, GaAs, by compound semiconductor is applied voltage, make the generation of meeting under different electrode voltage effects of electricity hole and electronics compound, at this moment electrons drop into relatively low can rank, discharge with the pattern of photon simultaneously, allow electric energy be converted to luminous energy, reach the effect of luminescence.
But the technology of this illumination, it is owing to the non-renewable resources such as coal, natural gas, oil are the deficientest by the behind of presumption principle, therefore while tapping a new source of energy, needs to develop energy-conserving product the most in the lump and slows down the speed consuming residue fossil fuel.But under the pressure that oil price is unstable, the whole world puts into the exploitation of energy-conserving product the most energetically.Therefore, the light emitting diode being called green light source meets this Trend of Energy Saving, the not only increasingly mature progress of technology, and its application is the most extensive.At present, light emitting diode has been widely used on 3C Product indicator and display device；But producing the raising of yield along with light emitting diode again, unit manufacturing cost is the most and then greatly reduced, and promoting each field to be all considered as light emitting diode is illuminating material.
The light emitting diode being as noted previously, as exploitation high brightness at present has become the Research Emphasis of manufacturer of various countries, so how the usefulness of light emitting diode is further promoted, it is simply that the focus should focused in improvement.
But the means promoting light-emitting diodes tube efficiency have a variety of, many changes designed by each side have been had to improve the luminiferous trial of light emitting diode.
Past, in order to promote the light extraction efficiency of light emitting diode, once there is the edge surface using change light-emitting diode chip for backlight unit to increase the reflecting effect of light, and allowed light produced by luminescent layer increase the ability upwards going out light in edge surface generation reflection under the tangent plane structure of inverted trapezoidal.But this structure can not allow the light of downward loss can be reflected back preferable light direction.
In addition to this structure, past also has use to arrange aluminum reflecting layer in bottom, but the reflectance in aluminum reflecting layer is relatively low, and the reflecting properties of conventional aluminium mirror is about about 70%, and the life-span is short, and corrosion resistance is the poorest, therefore under it can miss the birth defect of light, have the problem existence absorbing luminous energy plus metal reflecting layer, the light extraction efficiency promoting light-emitting diode chip for backlight unit is not highlighted, also limit the life-span of light-emitting diode chip for backlight unit.
So the invention provides one to combine three layers of special construction, there is the light-emitting diode chip for backlight unit with catoptric arrangement of good improving extraction efficiency.
Summary of the invention
It is a primary object of the present invention to provide a kind of light-emitting diode chip for backlight unit with catoptric arrangement, be positioned at light-emitting diode chip for backlight unit and have three-decker design, the ability of Refl-Luminous diode loss light can be improved, be used for increasing light extraction efficiency.
The secondary objective of the present invention is, a kind of light-emitting diode chip for backlight unit with catoptric arrangement is provided, it is, by Prague diffraction Rotating fields, light done reflection first, the character with Bragg mirror is formed through different dielectric material, but do not occur the light of Prague diffraction just to arrive metallic reflector through transparent thin film layer, the most again by the metal material of tool high reflectance by light line reflection.
To achieve the above object, the present invention discloses a kind of light-emitting diode chip for backlight unit with catoptric arrangement, comprising: a light-emitting diode chip for backlight unit；One reflecting layer, is arranged at the lower section of described light-emitting diode chip for backlight unit, and described reflecting layer is several dielectric material mutual storehouse composition；One transparent thin film layer, is arranged at the lower section in described reflecting layer；And a metallic reflector, it is arranged at the lower section of described transparent thin film layer；Wherein, penetrate the light in described reflecting layer after described transparent thin film layer, will be reflected by described metallic reflector, and described transparent thin film layer is reflecting layer described in gluing and described metallic reflector.
Accompanying drawing explanation
Fig. 1 is the configuration diagram of a preferred embodiment of the present invention；
Fig. 2 is the reflecting layer schematic diagram of a preferred embodiment of the present invention；
Fig. 3 is the reflecting layer schematic diagram of a preferred embodiment of the present invention.
Detailed description of the invention
Describe the present invention below with reference to detailed description of the invention shown in the drawings.But these embodiments are not limiting as the present invention, structure, method or conversion functionally that those of ordinary skill in the art is made according to these embodiments are all contained in protection scope of the present invention.
Shown in ginseng Fig. 1, present invention comprises a light-emitting diode chip for backlight unit 10；One reflecting layer 20；One transparent thin film layer 30 and a metallic reflector 40.
Wherein, this reflecting layer 20 is arranged at the lower section of this light-emitting diode chip for backlight unit 10；This transparent thin film layer 30 is arranged at the lower section in this reflecting layer 20；And this metallic reflector 40 is arranged at the lower section of this transparent thin film layer 30.
In addition to above-mentioned overall structure, under concrete STRUCTURE DECOMPOSITION, this light-emitting diode chip for backlight unit 10 is then to be formed by substrate 101,1 first semiconductor layer 102, luminescent layer 103 and one second semiconductor layer 104 storehouse from the bottom to top, additionally has one first electrode 105 above this first semiconductor layer 102；There is above this second semiconductor layer 104 one second electrode 106.
The present invention light-emitting diode chip for backlight unit with catoptric arrangement based on said modules institute framework, splendid reflectance is reached by the three-decker below light-emitting diode chip for backlight unit 10, by in omnirange light produced by light emitting layer 103, the partially reflective time ideal dissipated downwards goes out the top of light, and the light extraction efficiency making light-emitting diode chip for backlight unit overall can improve.
In the middle of this three-decker, after the light sent when luminescent layer 103 is perforated through the first semiconductor layer 102 and substrate 101, will first arrive at reflecting layer 20, this reflecting layer 20 includes the dielectric material of several mutual storehouse.Shown in ginseng Fig. 2, it is to form the first dielectric layer 201 and the second dielectric layer 202 with two kinds of mutual storehouses of dielectric material in the present embodiment, and, these first dielectric layers 201 and the second dielectric layer 202 constitute several Prague diffraction layers 200 under mutual storehouse, in other words, the first dielectric layer 201 that these Prague diffraction layers 200 are made up of two kinds of different dielectric materials in this embodiment forms with push-down stack on the second dielectric layer 202, therefore under reflecting layer 20 has several Prague diffraction layer 200 structures, the first dielectric layer 201 and structure of the second dielectric layer about 202 storehouse repeatedly will be presented from concrete structure.
Wherein, the material of the first dielectric layer 201 is for selecting from silicon dioxide or titanium dioxide, and the material of the second dielectric layer 202 is for selecting from titanium dioxide or silicon dioxide.Within the particle diameter d of silicon dioxide is about 250nm, is λ=2d × nR × sin θ at Prague diffraction equation, and refractive index nR of silicon dioxide is 1.5, when incident angle θ is 60 °, HONGGUANG diffraction can be produced；When incident angle θ is 35 °, then purple light diffraction can be produced.But for titanium dioxide, its particle diameter is about 50-100nm, within the change of its particle diameter d, the difference of collocation incident angle θ, most light will successfully produce Prague diffraction.In the diffraction layer of Prague 200, it is to form with the mutual storehouse of high and low refractive index material that wavelength 1/4 λ is thick, it is therefore an objective to will obtain reflecting light Constructive interaction, therefore maximum by refractive index difference, and the material of light can be penetrated, the reflecting mirror the highest by obtaining reflectance.
And owing to the refractive index difference of titanium dioxide and silicon dioxide is the biggest, therefore under mutual storehouse, Prague diffraction layer 200 formed will can reach good reflecting effect, under several stacked groups are closed, can reach the reflectance of more than 80%, also will not produce with metal is the absorption problem that reflecting material can have simultaneously.
The reflecting layer 20 of one of the embodiment of the present invention is to be formed by least three Prague diffraction layer 200 overlap, i.e. three the first dielectric layers 201 and three the second dielectric layers 202 six Rotating fields of mutual storehouse；Preferred embodiment structure composed is that 15 Prague diffraction layer 200 overlaps form.Under this overlap mode, the thickness in reflecting layer 20 is between 300 angstroms to 30000 angstroms.
It addition, shown in ginseng Fig. 3, reflecting layer 20 can farther include at least one non-Prague diffraction layer 203, lays respectively at the lower section of this Prague diffraction layer 200, with the state that this Prague diffraction layer 200 forms mutual storehouse.This non-Prague diffraction layer 203 can be metallic reflector, mixed reflection (hybrid reflection) layer, total reflection (total internal reflection) layer or comprehensive reflection (omni-directional
Reflection) layer.By with Prague mutual storehouse of diffraction layer, reflecting effect can promote further.
In reflecting layer 20 times, formed is transparent thin film layer 30.The material of making of transparent thin film layer 30 includes aluminum and oxygen, wherein comprises the aluminium oxide of more than 70%, and its color is transparent, is available for the light penetration not reflected by Prague diffraction layer 200.The purpose that arranges of this transparent thin film layer 30 is not to be to reflect light, but in order to connect the metallic reflector 40 in the reflecting layer 20 above it and lower section to form robust structure.Under this gluing mode, the problem making both originally be difficult to engage on physicochemical characteristic is overcome.
The material of metallic reflector 40 includes silver, and is the argentum reflecting layer of silver content more than 90%, the most upwards can reflect arriving at light.Owing to silver itself has high reflectance, therefore light successfully can be reflected, and after upwardly penetrating through transparent thin film layer 30, some light is reflected down by Prague diffraction layer 200 after arriving at reflecting layer 20 again, and reflect under different dielectric materials, upwards reflect light through metallic reflector 40 the most again.Producing reflection the most back and forth, the light that luminescent layer 103 escapes downwards originally, by can be under the collocation of reflecting layer 20, transparent thin film layer 30 and metallic reflector 40, the light of the overwhelming majority will not escape loss.
By the light-emitting diode chip for backlight unit with catoptric arrangement disclosed by the invention, light-emitting diode chip for backlight unit can be concentrated and upwards go out light, the luminous energy changed out by electric energy guides preferable light direction, thus reach preferable light extraction efficiency, and avoid being used alone metallic reflector and causing luminous energy to be absorbed；Therefore, under identical input energy, the light-emitting diode chip for backlight unit with catoptric arrangement disclosed by the invention, really have preferably and be not typically have reflecting layer can the light-out effect of gain, so the design that the present invention is a high economic worth of tool.
It is to be understood that, although this specification is been described by according to embodiment, but the most each embodiment only comprises an independent technical scheme, this narrating mode of description is only for clarity sake, those skilled in the art should be using description as an entirety, technical scheme in each embodiment can also form, through appropriately combined, other embodiments that it will be appreciated by those skilled in the art that.
The a series of detailed description of those listed above is only for illustrating of the feasibility embodiment of the present invention; they also are not used to limit the scope of the invention, and all equivalent implementations or changes made without departing from skill of the present invention spirit should be included within the scope of the present invention.
Claims (8)
1. a light-emitting diode chip for backlight unit with catoptric arrangement, it is characterised in that including:
One light-emitting diode chip for backlight unit；
One reflecting layer, is arranged at the lower section of described light-emitting diode chip for backlight unit, and described reflecting layer includes the dielectric material of several mutual storehouse；
One transparent thin film layer, is arranged at the lower section in described reflecting layer, and described transparent thin film layer comprises the aluminium oxide of more than 70%；And
One metallic reflector, is arranged at the lower section of described transparent thin film layer；
Wherein, penetrate the light in described reflecting layer after described transparent thin film layer, will be reflected by described metallic reflector, and reflecting layer described in described transparent thin film layer gluing with described metallic reflector to form robust structure.
There is the light-emitting diode chip for backlight unit of catoptric arrangement the most as claimed in claim 1, it is characterised in that described reflecting layer includes that several Prague diffraction layers, described Prague diffraction layer are respectively provided with one first dielectric layer and one second dielectric layer.
There is the light-emitting diode chip for backlight unit of catoptric arrangement the most as claimed in claim 2, it is characterised in that the material of described first dielectric layer is for selecting from silicon dioxide or titanium dioxide.
There is the light-emitting diode chip for backlight unit of catoptric arrangement the most as claimed in claim 2, it is characterised in that the material of described second dielectric layer is for selecting from titanium dioxide or silicon dioxide.
There is the light-emitting diode chip for backlight unit of catoptric arrangement the most as claimed in claim 2, it is characterised in that the reflectance in described reflecting layer is more than 80%, and described reflecting layer at least has three overlapping described Prague diffraction layers.
There is the light-emitting diode chip for backlight unit of catoptric arrangement the most as claimed in claim 2, it is characterised in that described reflecting layer farther includes at least one non-Prague diffraction layer, lays respectively at the lower section of described Prague diffraction layer, with described Prague mutual storehouse of diffraction layer.
There is the light-emitting diode chip for backlight unit of catoptric arrangement the most as claimed in claim 1, it is characterised in that the thickness in described reflecting layer is between 300 angstroms to 30000 angstroms.
There is the light-emitting diode chip for backlight unit of catoptric arrangement the most as claimed in claim 1, it is characterised in that the material of described metallic reflector includes silver, and silver content is more than 90%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210399892.8A CN103247737B (en) | 2012-10-19 | 2012-10-19 | There is the light-emitting diode chip for backlight unit of catoptric arrangement |
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| CN201210399892.8A CN103247737B (en) | 2012-10-19 | 2012-10-19 | There is the light-emitting diode chip for backlight unit of catoptric arrangement |
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| CN103247737B true CN103247737B (en) | 2016-08-24 |
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| CN104576874B (en) * | 2013-10-22 | 2018-01-09 | 泰谷光电科技股份有限公司 | A kind of crystal-coated light-emitting diodes structure |
| CN109869644B (en) * | 2019-03-05 | 2020-12-25 | 东海县一丰灯具有限公司 | Enhanced LED light source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102612760A (en) * | 2009-08-10 | 2012-07-25 | 克里公司 | Light emitting diodes including integrated backside reflector and die attach |
| CN102610720A (en) * | 2012-03-21 | 2012-07-25 | 厦门市三安光电科技有限公司 | Light-emitting diode (LED) with omnidirectional reflector and manufacturing method of LED |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4063062B2 (en) * | 2002-12-03 | 2008-03-19 | コニカミノルタオプト株式会社 | Reflector |
| TW201145560A (en) * | 2010-06-01 | 2011-12-16 | High Power Optoelectronics Inc | Light-emitting diode with Bragg film and metal layer |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102612760A (en) * | 2009-08-10 | 2012-07-25 | 克里公司 | Light emitting diodes including integrated backside reflector and die attach |
| CN102610720A (en) * | 2012-03-21 | 2012-07-25 | 厦门市三安光电科技有限公司 | Light-emitting diode (LED) with omnidirectional reflector and manufacturing method of LED |
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Effective date of registration: 20161024 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: China Longtan Taiwan Taoyuan County Rural Science and Technology Park Longtan Dragon Garden Road No. 99 Patentee before: Formosa Epitaxy Incorporation |