CN103247737A - LED chip provided with reflection structure - Google Patents
LED chip provided with reflection structure Download PDFInfo
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- CN103247737A CN103247737A CN2012103998928A CN201210399892A CN103247737A CN 103247737 A CN103247737 A CN 103247737A CN 2012103998928 A CN2012103998928 A CN 2012103998928A CN 201210399892 A CN201210399892 A CN 201210399892A CN 103247737 A CN103247737 A CN 103247737A
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- light
- emitting diode
- reflector
- backlight unit
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Abstract
The invention discloses an LED chip provided with a reflection structure. A reflection design with a three-layer structure is formed below the LED chip; first stage reflection is performed through a plurality of Bragg diffraction layers; then continuous reflection is performed through a transparent film layer jointed with a metallic reflection layer; therefore, most of light rays can be reflected successfully by the combination of the three layers; and meanwhile, the absorption problem caused by independent usage of a metallic reflection material is solved, and the light extraction efficiency is promoted.
Description
Technical field
The present invention relates to a kind of light-emitting diode chip for backlight unit technical field, relate in particular to a kind of light-emitting diode chip for backlight unit with catoptric arrangement.
Background technology
Light-emitting diode (Light Emitting Diode, LED) be the solid luminescent assembly that a kind of semi-conducting material is made, it uses the combination of III-V family chemical elements such as gallium phosphide, GaAs, by compound semiconductor is applied voltage, electric hole and electronics are met produce under different electrode voltage effects compound, at this moment electronics can drop into lower can rank, the pattern with photon discharges simultaneously, allow electric energy be converted to luminous energy, reach luminous effect.
Yet the technology of this illumination, its behind that is pushed development are because non-renewable resources such as coal, natural gas, oil are deficient gradually, therefore when tapping a new source of energy, also need to develop energy-conserving product in the lump and slow down the speed that consumes the residue fossil fuel.Yet under the unsettled pressure of oil price, the exploitation that energy-conserving product is all dropped in the whole world energetically.Therefore, the light-emitting diode that is called green light source meets this energy-conservation trend, the not only increasingly mature progress of technology, and its application is also more extensive.At present, light-emitting diode has been widely used on 3C Product indicating device and the display device; Yet produce the raising of yield again along with light-emitting diode, the unit manufacturing cost also and then significantly reduces, and impelling each field all to consider to adopt light-emitting diode is illuminating material.
As mentioned above, because at present the light-emitting diode of exploitation high brightness has become the research and development emphasis of various countries manufacturer, so how the usefulness of light-emitting diode is done further lifting, the focus that in improvement, should focus on exactly.
It is a variety of that yet the means that promote the light-emitting diodes tube efficiency have, and many luminiferous trials that improve light-emitting diode by the change in the each side design have nowadays been arranged.
Past, in order to promote the light extraction efficiency of light-emitting diode, once there was the edge surface that adopts the change light-emitting diode chip for backlight unit to increase the reflecting effect of light, and in edge surface reflection took place and increase the upwards ability of bright dipping falling the light that allows luminescent layer produce under the trapezoidal tangent plane structure.Yet this structure can not allow can the reflected back desirable light direction of the light of downward loss.
Except this structure, past also has use that the aluminum reflector is set in the bottom, yet the reflectivity in aluminum reflector is relatively low, and the reflecting properties of conventional aluminium mirror is greatly about about 70%, and the life-span is short, and corrosion resistance is also poor, therefore can miss under the birth defect of light at it, add that metal reflector processed has the problem that absorbs luminous energy and exists, not outstanding to the light extraction efficiency that promotes light-emitting diode chip for backlight unit, the life-span of also having limited light-emitting diode chip for backlight unit.
So the invention provides a kind of three layers of special construction that combine, have the light-emitting diode chip for backlight unit with catoptric arrangement that well is lifted out optical efficiency.
Summary of the invention
Main purpose of the present invention is, a kind of light-emitting diode chip for backlight unit with catoptric arrangement is provided, and is positioned at light-emitting diode chip for backlight unit and has the three-decker design, can improve the ability of reflection light-emitting diode loss light, is used for increasing light extraction efficiency.
Secondary objective of the present invention is, a kind of light-emitting diode chip for backlight unit with catoptric arrangement is provided, be by Prague diffraction layer structure light to be done first reflection, see through the formation of different dielectric material and have the character of Bragg mirror, yet the light that Prague diffraction does not take place just sees through transparent thin film layer and arrives metallic reflector, then by the metal material of tool high reflectance light is reflected again.
To achieve the above object, the present invention discloses a kind of light-emitting diode chip for backlight unit with catoptric arrangement, and it comprises: a light-emitting diode chip for backlight unit; One reflector is arranged at the below of described light-emitting diode chip for backlight unit, and described reflector is that the some kinds of mutual storehouses of dielectric material are formed; One transparent thin film layer is arranged at the below in described reflector; Reach a metallic reflector, be arranged at the below of described transparent thin film layer; Wherein, penetrate the light in described reflector through behind the described transparent thin film layer, will be reflected by described metallic reflector, and described transparent thin film layer is the described reflector of gluing and described metallic reflector.
Description of drawings
Fig. 1 is the configuration diagram of a preferred embodiment of the present invention;
Fig. 2 is the reflector schematic diagram of a preferred embodiment of the present invention;
Fig. 3 is the reflector schematic diagram of a preferred embodiment of the present invention.
Embodiment
Describe the present invention below with reference to embodiment shown in the drawings.But these execution modes do not limit the present invention, and the conversion on the structure that those of ordinary skill in the art makes according to these execution modes, method or the function all is included in protection scope of the present invention.
Join shown in Figure 1ly, present invention includes a light-emitting diode chip for backlight unit 10; One reflector 20; One transparent thin film layer 30 and a metallic reflector 40.
Wherein, this reflector 20 is arranged at the below of this light-emitting diode chip for backlight unit 10; This transparent thin film layer 30 is arranged at the below in this reflector 20; And this metallic reflector 40 is arranged at the below of this transparent thin film layer 30.
Except above-mentioned overall structure, under concrete STRUCTURE DECOMPOSITION, 10 of this light-emitting diode chip for backlight unit be by a substrate 101, one first semiconductor layer 102, a luminescent layer 103 and one second semiconductor layer 104 from the bottom to top storehouse form, above this first semiconductor layer 102, have one first electrode 105 in addition; These second semiconductor layer, 104 tops have one second electrode 106.
The present invention is based on the light-emitting diode chip for backlight unit with catoptric arrangement that said modules institute framework forms, reach splendid albedo by the three-decker below light-emitting diode chip for backlight unit 10, in the omnirange light that spontaneous photosphere 103 is produced, the top of the desirable bright dipping of the part reflected back of dispersing downwards can be improved the light extraction efficiency of light-emitting diode chip for backlight unit integral body.
In the middle of this three-decker, after light that luminescent layer 103 sends penetrated first semiconductor layer 102 and substrate 101, will at first arrive at reflector 20, this reflector 20 comprises the dielectric material of some kinds of mutual storehouses.Join shown in Figure 2, be to form first dielectric layer 201 and second dielectric layer 202 with two kinds of mutual storehouses of dielectric material in the present embodiment, and, these first dielectric layers 201 and second dielectric layer 202 are constituting several Prague diffraction layers 200 under the storehouse mutually, in other words, these Prague diffraction layers 200 push-down stack on first dielectric layer 201 that this embodiment is made up of two kinds of different dielectric materials and second dielectric layer 202 forms, therefore have under several Prague diffraction layer 200 structures in reflector 20, from concrete structure, will present first dielectric layer 201 and second dielectric layer 202 structure of storehouse repeatedly up and down.
Wherein, the material of first dielectric layer 201 is to select from silicon dioxide or titanium dioxide, and the material of second dielectric layer 202 is for selecting from titanium dioxide or silicon dioxide.The particle diameter d of silicon dioxide is about 250nm, is λ=2d * nR * sin θ at Prague diffraction equation, and the refractive index n R of silicon dioxide is in 1.5, when incident angle θ is 60 °, can produce ruddiness diffraction; When incident angle θ is 35 °, can produce purple light diffraction so.Yet for titanium dioxide, its particle diameter is about 50-100nm, in the variation of its particle diameter d, and the difference of collocation incident angle θ, most light will successfully produce Prague diffraction.In the diffraction layer of Prague 200, it is to form with the thick mutual storehouse of high and low refractive index material of wavelength 1/4 λ, and purpose is to obtain the constructive interference of reverberation, therefore with refractive index difference maximum, and can penetrate the material of light, will obtain the highest speculum of reflectivity.
And because the refractive index difference of titanium dioxide and silicon dioxide is quite big, therefore under mutual storehouse, formed Prague diffraction layer 200 can reach good reflecting effect, under the folded combination of number, can reach the reflectivity more than 80%, can not produce simultaneously yet with metal be reflecting material the absorption problem that can have.
The reflector 20 of one of embodiment of the invention is by at least three Prague diffraction layer 200 overlapping forming, i.e. six layers of structure forming of three first dielectric layers 201 and 202 mutual storehouses of three second dielectric layers; Preferably to form framework be 15 Prague diffraction layer 200 overlapping forming to embodiment.Under this overlap mode, the thickness in reflector 20 is between 300 dust to 30000 dusts.
In addition, join shown in Figure 3ly, reflector 20 can further comprise at least one non-Prague diffraction layer 203, lays respectively at the below of this Prague diffraction layer 200, forms the state of mutual storehouse with this Prague diffraction layer 200.This non-Prague diffraction layer 203 can be metallic reflector, mixed reflection (hybrid reflection) layer, total reflection (total internal reflection) layer or comprehensive reflection (omni-directional reflection) layer.By with the mutual storehouse of Prague diffraction layer, reflecting effect can further promote.
In the reflector 20 times, formed is transparent thin film layer 30.The material of making of transparent thin film layer 30 comprises aluminium and oxygen, wherein comprises the aluminium oxide more than 70%, and its color is transparent, can be for the light penetration that is not reflected by Prague diffraction layer 200.The purpose that arranges of this transparent thin film layer 30 is not to be reflection ray, but for connect its top reflector 20 and the metallic reflector 40 of below form robust structure.Under this gluing mode, the problem that makes both originally be difficult to engage at physicochemical characteristic is overcome.
The material of metallic reflector 40 comprises silver, and is the argentum reflecting layer of silver content more than 90%, can will arrive at as much as possible upwards reflection of light.Because silver itself has high reflectance, therefore light successfully can be reflected, and after upwards penetrating transparent thin film layer 30, part light is reflected downwards by Prague diffraction layer 200 after arriving at reflector 20 again, and under different dielectric materials, reflect, finally upwards reflect and bright dipping through metallic reflector 40 again.Produce reflection so back and forth, luminescent layer 103 is the light that loses of ease downwards originally, can be under the collocation of reflector 20, transparent thin film layer 30 and metallic reflector 40, and the mistake loss of will can not escaping of the light of the overwhelming majority.
By the light-emitting diode chip for backlight unit with catoptric arrangement disclosed by the invention, light-emitting diode chip for backlight unit can be concentrated upwards bright dipping, the desirable light direction of luminous energy guiding that electric energy is changed out, thereby reach light extraction efficiency preferably, and avoid using metallic reflector separately and cause luminous energy to be absorbed; Therefore, under identical input energy, the light-emitting diode chip for backlight unit with catoptric arrangement disclosed by the invention has preferable really and is not generally to have the light effect that goes out that the reflector can gain, so the present invention is the design of the high economic worth of a tool.
Be to be understood that, though this specification is described according to execution mode, but be not that each execution mode only comprises an independently technical scheme, this narrating mode of specification only is for clarity sake, those skilled in the art should make specification as a whole, technical scheme in each execution mode also can form other execution modes that it will be appreciated by those skilled in the art that through appropriate combination.
Above listed a series of detailed description only is specifying at feasibility execution mode of the present invention; they are not in order to limiting protection scope of the present invention, allly do not break away from equivalent execution mode or the change that skill spirit of the present invention does and all should be included within protection scope of the present invention.
Claims (10)
1. the light-emitting diode chip for backlight unit with catoptric arrangement is characterized in that, comprising:
One light-emitting diode chip for backlight unit;
One reflector is arranged at the below of described light-emitting diode chip for backlight unit, and described reflector comprises the dielectric material of some kinds of mutual storehouses;
One transparent thin film layer is arranged at the below in described reflector; And
One metallic reflector is arranged at the below of described transparent thin film layer;
Wherein, penetrate the light in described reflector through behind the described transparent thin film layer, will be reflected by described metallic reflector, and the described reflector of described transparent thin film layer gluing and described metallic reflector.
2. the light-emitting diode chip for backlight unit with catoptric arrangement as claimed in claim 1 is characterized in that, described reflector comprises several Prague diffraction layers, and described Prague diffraction layer has one first dielectric layer and one second dielectric layer respectively.
3. the light-emitting diode chip for backlight unit with catoptric arrangement as claimed in claim 2 is characterized in that, the material of described first dielectric layer is for selecting from silicon dioxide or titanium dioxide.
4. the light-emitting diode chip for backlight unit with catoptric arrangement as claimed in claim 2 is characterized in that, the material of described second dielectric layer is for selecting from titanium dioxide or silicon dioxide.
5. the light-emitting diode chip for backlight unit with catoptric arrangement as claimed in claim 2 is characterized in that, the reflectivity in described reflector is greater than 80%, and described reflector has three overlapping described Prague diffraction layers at least.
6. the light-emitting diode chip for backlight unit with catoptric arrangement as claimed in claim 2 is characterized in that, described reflector further comprises at least one non-Prague diffraction layer, lays respectively at the below of described Prague diffraction layer, with the mutual storehouse of described Prague diffraction layer.
7. the light-emitting diode chip for backlight unit with catoptric arrangement as claimed in claim 1 is characterized in that, the thickness in described reflector is between 300 dust to 30000 dusts.
8. the light-emitting diode chip for backlight unit with catoptric arrangement as claimed in claim 1 is characterized in that, the material of described transparent thin film layer comprises aluminium and oxygen.
9. the light-emitting diode chip for backlight unit with catoptric arrangement as claimed in claim 1 is characterized in that, described transparent thin film layer comprises the aluminium oxide more than 70%.
10. the light-emitting diode chip for backlight unit with catoptric arrangement as claimed in claim 1 is characterized in that, the material of described metallic reflector comprises silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210399892.8A CN103247737B (en) | 2012-10-19 | 2012-10-19 | There is the light-emitting diode chip for backlight unit of catoptric arrangement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210399892.8A CN103247737B (en) | 2012-10-19 | 2012-10-19 | There is the light-emitting diode chip for backlight unit of catoptric arrangement |
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| Publication Number | Publication Date |
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| CN103247737A true CN103247737A (en) | 2013-08-14 |
| CN103247737B CN103247737B (en) | 2016-08-24 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576874A (en) * | 2013-10-22 | 2015-04-29 | 泰谷光电科技股份有限公司 | Flip chip LED structure |
| CN109869644A (en) * | 2019-03-05 | 2019-06-11 | 金华伏安光电科技有限公司 | A kind of enhanced LED light source |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004184703A (en) * | 2002-12-03 | 2004-07-02 | Minolta Co Ltd | Reflection mirror |
| TW201145560A (en) * | 2010-06-01 | 2011-12-16 | High Power Optoelectronics Inc | Light-emitting diode with Bragg film and metal layer |
| CN102610720A (en) * | 2012-03-21 | 2012-07-25 | 厦门市三安光电科技有限公司 | Light-emitting diode (LED) with omnidirectional reflector and manufacturing method of LED |
| CN102612760A (en) * | 2009-08-10 | 2012-07-25 | 克里公司 | Light emitting diodes including integrated backside reflector and die attach |
-
2012
- 2012-10-19 CN CN201210399892.8A patent/CN103247737B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004184703A (en) * | 2002-12-03 | 2004-07-02 | Minolta Co Ltd | Reflection mirror |
| CN102612760A (en) * | 2009-08-10 | 2012-07-25 | 克里公司 | Light emitting diodes including integrated backside reflector and die attach |
| TW201145560A (en) * | 2010-06-01 | 2011-12-16 | High Power Optoelectronics Inc | Light-emitting diode with Bragg film and metal layer |
| CN102610720A (en) * | 2012-03-21 | 2012-07-25 | 厦门市三安光电科技有限公司 | Light-emitting diode (LED) with omnidirectional reflector and manufacturing method of LED |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576874A (en) * | 2013-10-22 | 2015-04-29 | 泰谷光电科技股份有限公司 | Flip chip LED structure |
| CN104576874B (en) * | 2013-10-22 | 2018-01-09 | 泰谷光电科技股份有限公司 | A kind of crystal-coated light-emitting diodes structure |
| CN109869644A (en) * | 2019-03-05 | 2019-06-11 | 金华伏安光电科技有限公司 | A kind of enhanced LED light source |
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| Publication number | Publication date |
|---|---|
| CN103247737B (en) | 2016-08-24 |
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Effective date of registration: 20161024 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: China Longtan Taiwan Taoyuan County Rural Science and Technology Park Longtan Dragon Garden Road No. 99 Patentee before: Formosa Epitaxy Incorporation |