CN103245900A - Fully dynamic aging tester for high-power and high-voltage silicon stack - Google Patents
Fully dynamic aging tester for high-power and high-voltage silicon stack Download PDFInfo
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- CN103245900A CN103245900A CN2013101381364A CN201310138136A CN103245900A CN 103245900 A CN103245900 A CN 103245900A CN 2013101381364 A CN2013101381364 A CN 2013101381364A CN 201310138136 A CN201310138136 A CN 201310138136A CN 103245900 A CN103245900 A CN 103245900A
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Abstract
The invention discloses a fully dynamic aging tester for a high-power and high-voltage silicon stack in the electronic component production field. The tester comprises a rectification conversion circuit, a test power source control circuit, a high-power forward current source generation circuit, a high-power backward voltage source generation circuit, a sampling circuit and a display and alarm circuit, and is characterized in that the test power source control circuit comprises a test current source control circuit, a test voltage control circuit, a current/voltage switch control circuit and a test total time length timer circuit, a test sample is placed in a heating oil tank, the high-power current and voltage sources are switched automatically in positive and negative half cycles, working currents are applied to an alternating current positive half cycle, backward working voltage is applied to a negative half cycle, and the rectification conversion circuit heats medium insulating oil and keeps the medium insulating oil at a constant temperature. Compared with the prior art, the fully dynamic aging tester for the high-power and high-voltage silicon stack has the advantages that the work is reliable, the efficiency is high, the operation is safe, and the like.
Description
Technical field
The present invention relates to a kind of test apparatus in production of electronic components field, specifically, the present invention is the full dynamic aging test instrument of a kind of high-power high voltage silicon stack.
Background technology
Along with progress of science and technology, the application of electronic product in people's life more and more widely, different electronic products is owing to its working environment and function is different, requirement to electronic devices and components is also different, in the production of electronic components field, for producing qualified product, need carry out full dynamic test to the product of its production, to reach the desired product reliability data.In the electronic product use because the variation of the fluctuation of voltage and load can cause the overload of electronic product, this just needs electronic devices and components to have certain overload capacity, for the performance of testing the electronic devices and components of producing is tested its overload capacity, along with the upgrading of product, the full dynamic aging test instrument of high-power high voltage silicon stack that uses can't satisfy the testing requirement of large-current high-voltage silicon stack (high-voltage diode) at present.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, provide a kind of high-power high voltage silicon stack full dynamic aging test instrument, by the forward overload working current that high-power high voltage silicon stack (high-voltage diode) is applied regulation, working inverse voltage and the test temperature of regulation and the accumulation test period length of regulation of regulation, examine permanance and the mission life of high-power high voltage silicon stack (high-voltage diode) under full dynamic operating condition.
The present invention is achieved by the following technical solutions:
The full dynamic aging test instrument of a kind of high-power high voltage silicon stack, comprise rectification transformating circuit, the experiment power supply control circuit, circuit takes place in high-power forward current source, circuit takes place in high-power reverse voltage source, sample circuit and Display and Alarm Circuit, it is characterized in that: the experiment power supply control circuit comprises the test current source control circuit, the trial voltage control circuit, current/voltage control switching circuit and the total duration timer circuit of test, test current source control circuit and trial voltage control circuit are controlled high-power forward current source circuit and high-power reverse voltage source generation circuit are taken place, high-power electric current and voltage source are in the automatic switchover of positive-negative half-cycle, exchange positive half cycle and apply the forward working current, negative half period applies working inverse voltage; Test specimen is in the heating oil groove, rectification transformating circuit heats and constant temperature the medium insulating oil, sample circuit testing electric current, operating voltage detect fluctuation, drift sampling and test temperature control, and Display and Alarm Circuit shows the total duration of forward and reverse working current, working inverse voltage, test temperature and test.
The present invention compared with prior art has following beneficial effect:
1. every requirement of reliable operation, the full dynamic aging test of realization;
2. efficient height, handling safety.
Description of drawings
Fig. 1 is the full dynamic aging test instrument of high-power high voltage silicon stack fundamental diagram.
Embodiment
Below in conjunction with Figure of description content of the present invention is described further:
The present invention examines permanance and the mission life of high-power high voltage silicon stack (high-voltage diode) under full dynamic operating condition by the forward overload working current that high-power high voltage silicon stack (high-voltage diode) is applied regulation, working inverse voltage and the test temperature of regulation and the accumulation test period length of regulation of regulation.
The full dynamic aging test instrument of a kind of high-power high voltage silicon stack that The present invention be directed to above-mentioned requirements and design, comprise that circuit takes place for rectification transformating circuit, experiment power supply control circuit, high-power forward current source, circuit, sample circuit and Display and Alarm Circuit take place in high-power reverse voltage source, because high-power high voltage silicon stack (high-voltage diode) aging test has following characteristics:
(1) forward conduction voltage drop is big, is more than 10 times of general heavy-duty diode;
(2) a plurality of sample tandem tests, accumulation forward voltage drop super large;
(3) long-time test (168 ~ 1000 hours) continuously;
(4) diode is nonlinear device, and test specimen itself is again high power device, thus cold conditions and when hot the diode internal resistance change sharply;
The stability requirement height that above high-power high voltage silicon stack is used electric current to stability and the test of large power supply self.The design is by adopting high-power electric current and voltage source at automatic switchover control technology and the fictitious load circuit of positive-negative half-cycle, reaches exchanging positive half cycle to apply the forward working current, and negative half period applies working inverse voltage; Medium (insulating oil) is heated and constant temperature; Above many-sided combination realizes every requirement of the full dynamic aging test of large-current high-voltage silicon stack (high-voltage diode).The overvoltage of high-power test power source loads pipe detects in control technology and the test circuit such as over-current detection warning, the protection when having realized overload preferably and the timely cut-out when losing efficacy.
Claims (3)
1. full dynamic aging test instrument of high-power high voltage silicon stack, comprise rectification transformating circuit, the experiment power supply control circuit, circuit takes place in high-power forward current source, circuit takes place in high-power reverse voltage source, sample circuit and Display and Alarm Circuit, it is characterized in that: the experiment power supply control circuit comprises the test current source control circuit, the trial voltage control circuit, current/voltage control switching circuit and the total duration timer circuit of test, test specimen is in the heating oil groove, high-power electric current and voltage source automatically switch in positive-negative half-cycle, exchange positive half cycle and apply the forward working current, negative half period applies working inverse voltage, and rectification transformating circuit heats and constant temperature the medium insulating oil.
2. the full dynamic aging test instrument of high-power high voltage silicon stack according to claim 1 is characterized in that: sample circuit testing electric current, operating voltage detection fluctuation, drift sampling and test temperature control.
3. the full dynamic aging test instrument of high-power high voltage silicon stack according to claim 1, it is characterized in that: Display and Alarm Circuit shows the total duration of forward and reverse working current, working inverse voltage, test temperature and test.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310138136.4A CN103245900B (en) | 2013-04-19 | 2013-04-19 | The full dynamic aging test instrument of high-power high voltage silicon stack |
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| CN201310138136.4A CN103245900B (en) | 2013-04-19 | 2013-04-19 | The full dynamic aging test instrument of high-power high voltage silicon stack |
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| CN103245900A true CN103245900A (en) | 2013-08-14 |
| CN103245900B CN103245900B (en) | 2016-01-20 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103558444A (en) * | 2013-11-14 | 2014-02-05 | 南通皋鑫电子股份有限公司 | High-voltage silicon stack reverse current tester |
| CN105843122A (en) * | 2016-04-18 | 2016-08-10 | 邵镜容 | Monitoring device and system for aging of electronic product |
| CN106291307A (en) * | 2016-08-19 | 2017-01-04 | 南通皋鑫电子股份有限公司 | The method that microwave oven is tested with diodes age |
| CN108020767A (en) * | 2017-10-24 | 2018-05-11 | 朝阳无线电元件有限责任公司 | A kind of seasoned experimental provision of semiconductor devices and method |
| CN112014712A (en) * | 2020-09-24 | 2020-12-01 | 中国振华集团永光电子有限公司（国营第八七三厂） | Full-dynamic aging method and device for full-digital diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103558444A (en) * | 2013-11-14 | 2014-02-05 | 南通皋鑫电子股份有限公司 | High-voltage silicon stack reverse current tester |
| CN105843122A (en) * | 2016-04-18 | 2016-08-10 | 邵镜容 | Monitoring device and system for aging of electronic product |
| CN106291307A (en) * | 2016-08-19 | 2017-01-04 | 南通皋鑫电子股份有限公司 | The method that microwave oven is tested with diodes age |
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| CN112014712A (en) * | 2020-09-24 | 2020-12-01 | 中国振华集团永光电子有限公司（国营第八七三厂） | Full-dynamic aging method and device for full-digital diode |
| CN112014712B (en) * | 2020-09-24 | 2023-03-31 | 中国振华集团永光电子有限公司（国营第八七三厂） | Full-dynamic aging method and device for full-digital diode |
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| CN103245900B (en) | 2016-01-20 |
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Effective date of registration: 20210902 Address after: 226503 No. 82, Zhongshan West Road, Rucheng street, Rugao City, Nantong City, Jiangsu Province Patentee after: Jiangsu Gaoxin Electronics Co.,Ltd. Address before: 226502 No. 82, Zhongshan West Road, Rucheng, Rugao, Nantong, Jiangsu Patentee before: NANTONG GAOXIN ELECTRONICS Co.,Ltd. |
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